JPH03235370A - Tandem type solar battery - Google Patents
Tandem type solar batteryInfo
- Publication number
- JPH03235370A JPH03235370A JP2031203A JP3120390A JPH03235370A JP H03235370 A JPH03235370 A JP H03235370A JP 2031203 A JP2031203 A JP 2031203A JP 3120390 A JP3120390 A JP 3120390A JP H03235370 A JPH03235370 A JP H03235370A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- layer
- thin film
- compound semiconductor
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- 238000000151 deposition Methods 0.000 abstract description 4
- -1 GaAs compound Chemical class 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 18
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は高効率のタンデム型太陽電池に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to a highly efficient tandem solar cell.
［従来の技術］
一般に、太陽電池の出力電圧を高くするには、禁制帯幅
の大きな半導体を選択する必要がある。[Prior Art] Generally, in order to increase the output voltage of a solar cell, it is necessary to select a semiconductor with a large forbidden band width.
しかしながら、禁制帯幅を大きくすると、禁制帯幅より
も低いエネルギの光すなわち長波長側の光は吸収されず
、利用される光子の数が減少し、出力電流が減少する。However, when the forbidden band width is increased, light with energy lower than the forbidden band width, that is, light on the longer wavelength side, is not absorbed, and the number of photons used decreases, resulting in a decrease in output current.
このため、高い変換効率を得ることができない。高い出
力電圧を保ちながら、大きな出力電流を得て高い変換効
率の太陽電池とするために、異なる禁制帯幅を有する化
合物半導体太陽電池を複数積層することが検討されてい
る。For this reason, high conversion efficiency cannot be obtained. In order to obtain a solar cell with high conversion efficiency by obtaining a large output current while maintaining a high output voltage, stacking a plurality of compound semiconductor solar cells having different forbidden band widths is being considered.
たとえば、単結晶シリコンを基板として、ＧａＡＳ系太
陽電池を積層することが才力モト等によって報告されて
いる（Ｐｒｏｃ、２０ｔｈ ＩＥＥシ
Ｅ ＰＶＳＣ，（ＩＥＥＥ、Ｎｅｗ Ｙｏｒｋ。For example, Saikimoto et al. reported that GaAS solar cells were stacked using single-crystal silicon as a substrate (Proc, 20th IEEE PVSC, (IEEE, New York).
１９８８））。また、ＧａＡｓ系太陽電池の上にＡＡ’
ＧａＡｓ系太陽電池を積層する構造も提案されている。1988)). In addition, AA' is placed on top of the GaAs solar cell.
A structure in which GaAs solar cells are stacked has also been proposed.
［発明が解決しようとする課題］
しかしながら、これらのタンデム型太陽電池は、たとえ
ば宇宙空間で使用する太陽電池のように単位面積当たり
非常に高い変換効率が要求される太陽電池としては、変
換効率が低く未だ不十分なものであった。[Problems to be Solved by the Invention] However, these tandem solar cells have low conversion efficiency as solar cells that require extremely high conversion efficiency per unit area, such as solar cells used in outer space. It was low and still insufficient.
したがって、従来より、太陽光スペクトルの吸収効率の
最適化により、高い変換効率を有する太陽電池の開発が
望まれていた。Therefore, it has been desired to develop solar cells with high conversion efficiency by optimizing the absorption efficiency of sunlight spectrum.
この発明の目的は、このような従来の要望を満足すべく
、単位面積当たりの変換効率を従来よりも向上させるこ
とのできるタンデム型太陽電池を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a tandem solar cell that can improve conversion efficiency per unit area compared to conventional solar cells, in order to satisfy such conventional demands.
口課題を解決するための手段および発明の作用効果コ
この発明のタンデム型太陽電池は、単結晶シリコン太陽
電池と、禁制帯幅が１．５ｅＶ以上２゜３ｅＶ以下の化
合物半導体からなる薄膜太陽電池とを積み重ねたタンデ
ム構造の太陽電池であり、単結晶シリコン太陽電池およ
び化合物半導体の薄膜太陽電池がヘテロ接合形成技術に
より一方の上に他方を連続成長させることによって積み
重ねられたものであることを特徴としている。Means for Solving the Problems and Effects of the Invention The tandem solar cell of the present invention is a thin film solar cell comprising a single crystal silicon solar cell and a compound semiconductor with a forbidden band width of 1.5 eV or more and 2°3 eV or less. It is a solar cell with a tandem structure in which a single crystal silicon solar cell and a compound semiconductor thin film solar cell are stacked by successively growing one on top of the other using heterojunction formation technology. It is said that
この発明において、連続成長によって積層される太陽電
池は、化合物半導体薄膜太陽電池であってもよいし、単
結晶シリコン太陽電池であってもよい。すなわち、単結
晶シリコン太陽電池の上にヘテロ接合形成技術により化
合物半導体薄膜太陽電池を成長させてもよいし、あるい
は化合物半導体薄膜太陽電池の上にヘテロ接合形成技術
により単結晶シリコン太陽電池を成長させてもよい。In this invention, the solar cells stacked by continuous growth may be compound semiconductor thin film solar cells or single crystal silicon solar cells. That is, a compound semiconductor thin film solar cell may be grown on a single crystal silicon solar cell using a heterojunction formation technique, or a single crystal silicon solar cell may be grown on a compound semiconductor thin film solar cell using a heterojunction formation technique. It's okay.
化合物半導体薄膜太陽電池を形成する化合物半導体とし
ては、ＧａＡｓ、ＧａＰおよびＩｎＰからなる群より選
ばれる少なくとも１種の２元系化合物半導体や、あるい
はＡｌＧａＡｓ、ＡｌＧａＰ、ＩｎＡｌＡｓ、ＩｎＡＩ
ＰおよびＧａ Ｉ ｎＰからなる群より選ばれる少なく
とも１種の３元系化合物半導体等を用いることができる
。The compound semiconductor forming the compound semiconductor thin film solar cell may be at least one binary compound semiconductor selected from the group consisting of GaAs, GaP, and InP, or AlGaAs, AlGaP, InAlAs, or InAI.
At least one type of ternary compound semiconductor selected from the group consisting of P and Ga I nP can be used.
この発明の好ましい１つの実施態様においては、単結晶
シリコン太陽電池と、ＧａＡｓ、ＧａＰおよびＩｎＰか
らなる第１の化合物半導体薄膜太陽電池と、ＡｌＧａＡ
ｓ、ＡｌＧａＰ、ＩｎＡｌＡｓ、ＩｎＡＩＰおよびＧａ
ＩｎＰからなる群より選ばれる少なくとも１種であって
第１の化合物半導体薄膜太陽電池より禁制帯幅の大きな
化合物半導体からなる第２の化合物半導体薄膜太陽電池
が積み重ねられタンデム型太陽電池を構成する。In one preferred embodiment of the present invention, a single crystal silicon solar cell, a first compound semiconductor thin film solar cell made of GaAs, GaP and InP, and an AlGaA
s, AlGaP, InAlAs, InAIP and Ga
A second compound semiconductor thin film solar cell made of at least one compound semiconductor selected from the group consisting of InP and having a larger forbidden band width than the first compound semiconductor thin film solar cell is stacked to form a tandem solar cell.
さらに好ましいこの発明の実施態様においては、単結晶
シリコン太陽電池の上に、ＧａＡｓ薄膜太陽電池と、Ａ
Ｉ！ＧａＡｓ薄膜太陽電池を順次連続成長させて積み重
ねて構成され、ＡｌＧａＡｓ薄膜太陽電池のＰ−Ｎ接合
型光電変換層のアルミニウム組成比が０．６以上であり
、かつＰ−Ｎ接合型光電変換層の合計の厚みが５μｍ以
上である。In a more preferred embodiment of the present invention, a GaAs thin film solar cell and an A
I! It is constructed by sequentially and continuously growing GaAs thin film solar cells and stacking them, and the aluminum composition ratio of the P-N junction type photoelectric conversion layer of the AlGaAs thin film solar cell is 0.6 or more, and the aluminum composition ratio of the P-N junction type photoelectric conversion layer is The total thickness is 5 μm or more.
この実施態様においては、第１の化合物半導体薄膜太陽
電池としてＧａＡｓを選び、第２の化合物半導体太陽電
池としてアルミニウム組成比が０゜６以上のＡｌＧａＡ
ｓを選ぶことにより、太陽光スペクトルの吸収効率の最
適化を図っている。単結晶シリコン太陽電池の禁制帯幅
は１．１ｅＶであり、ＧａＡｓの禁制帯幅は１．４３ｅ
Ｖである。In this embodiment, GaAs is selected as the first compound semiconductor thin film solar cell, and AlGaA with an aluminum composition ratio of 0°6 or more is selected as the second compound semiconductor solar cell.
By selecting s, the absorption efficiency of sunlight spectrum is optimized. The forbidden band width of a single crystal silicon solar cell is 1.1 eV, and the forbidden band width of GaAs is 1.43 eV.
It is V.
アルミニウム組成比が０．６以上のＡｌＧａＡｓは、禁
制帯幅が２．１ｅＶ以上である。このように異なる禁制
帯幅の太陽電池をタンデム型に積層させることにより、
太陽光を有効に利用し、太陽光の吸収効率を高めている
。AlGaAs with an aluminum composition ratio of 0.6 or more has a forbidden band width of 2.1 eV or more. By stacking solar cells with different forbidden band widths in tandem,
It uses sunlight effectively and increases the absorption efficiency of sunlight.
また、この実施態様で第２の化合物半導体薄膜太陽電池
として用いるＡｌＧａＡｓは、アルミニウム組成比が高
いため、間接遷移型バンド構造となり、光の吸収効率が
低くなる。このような光の吸収効率の低下を補うため、
この実施態様では、ＡｌＧａＡｓ薄膜太陽電池のＰ−Ｎ
接合型光電変換層の合計の厚みを５μｍ以上としている
。Furthermore, since the AlGaAs used as the second compound semiconductor thin film solar cell in this embodiment has a high aluminum composition ratio, it has an indirect transition type band structure and has a low light absorption efficiency. In order to compensate for this decrease in light absorption efficiency,
In this embodiment, the P-N of an AlGaAs thin film solar cell is
The total thickness of the junction type photoelectric conversion layer is 5 μm or more.
また、この実施態様においてさらに好ましくは、単結晶
シリコン太陽電池のＰ−Ｎ接合型光電変換層のＧａＡｓ
薄膜太陽電池側の導電性はＮ型であることが好ましい。Further, in this embodiment, it is more preferable to use GaAs in the P-N junction type photoelectric conversion layer of the single crystal silicon solar cell.
The conductivity on the thin film solar cell side is preferably N type.
Ｐ型とした場合には、ＧａＡＳ薄膜太陽電池からのＡｓ
の拡散の影響を受けるからである。In the case of P type, As from GaAS thin film solar cells
This is because it is affected by the diffusion of
［実施例］
実施例Ｉ
Ｂドープのシリコン基板にＡｓを拡散させて、Ｐ−Ｎ接
合を形成し、単結晶シリコン太陽電池となる基板を形成
した。この単結晶シリコン太陽電池となる基板をＭＯＶ
ＰＥ装置内で、Ｈ２雰囲気下に９００℃で熱処理を施し
た後、温度を４００℃に下げ、Ｈ２で希釈したＡｓＨ３
と、Ｈ２をバブリングして供給するトリメチルガリウム
（ＴＭＧ）と、同じくＨ２をバブリングして供給するジ
メチルジンク（ＤＭＺ）を供給して、単結晶シリコン太
陽電池となる基板の上にｐ型のＧａＡｓを６００Ａの厚
みで成長させた。[Example] Example I A B-doped silicon substrate was diffused with As to form a PN junction, thereby forming a substrate that would become a single-crystal silicon solar cell. MOV the substrate that will become this single crystal silicon solar cell.
After heat treatment at 900°C under H2 atmosphere in PE equipment, the temperature was lowered to 400°C and AsH3 diluted with H2
Then, by supplying trimethyl gallium (TMG), which is supplied by bubbling H2, and dimethyl zinc (DMZ), which is also supplied by bubbling H2, p-type GaAs is deposited on the substrate that will become a single-crystal silicon solar cell. It was grown to a thickness of 600A.
次に、基板の温度を７００℃に昇温し、さらに３μｍの
厚みに成長させた。この状態で、ＴＭＧとＤＭＺの供給
を止め、反応管中にＴＭＧがなくなった後、再びＴＭＧ
とＳｉＨ４を流して、ｎ型のＧａＡｓ層を２μｍの厚み
に成長させた。この状態で、ＴＭＧおよびＳｉＨ４の供
給を止め、ＡｓＨ３を流したままの状態で室温まで冷却
した。Next, the temperature of the substrate was raised to 700° C., and the film was further grown to a thickness of 3 μm. In this state, the supply of TMG and DMZ is stopped, and after there is no TMG in the reaction tube, TMG is added again.
and SiH4 were flowed to grow an n-type GaAs layer to a thickness of 2 μm. In this state, the supply of TMG and SiH4 was stopped, and the reactor was cooled to room temperature while AsH3 continued to flow.
反応管内をＮ２で置換した後、薄膜成長させた基板を取
出し、この上にレジストを塗布し、フォトリソグラフを
用いて、１０ｍｍの幅の縞状の保護膜を形成し、ＧａＡ
ｓ層を硫酸系エツチング液で選択的にエツチングし、Ａ
ｕ合金を蒸着してｎ型シリコン層の上とｐ−ＧａＡｓに
接する櫛状の電極とを形成した。さらに、最上面である
ｎ−ＧａＡｓの上にフォトリソグラフを用いて、上記の
櫛状電極の間に櫛状の電極を蒸着して形成させた。After replacing the inside of the reaction tube with N2, the substrate on which the thin film had been grown was taken out, a resist was applied thereon, and a striped protective film with a width of 10 mm was formed using photolithography.
The s layer was selectively etched with a sulfuric acid-based etching solution, and A
A comb-shaped electrode was formed on the n-type silicon layer and in contact with the p-GaAs by vapor depositing a u-alloy. Furthermore, comb-shaped electrodes were deposited and formed between the above-mentioned comb-shaped electrodes using photolithography on the uppermost n-GaAs surface.
また、単結晶シリコン太陽電池となる基板の裏面には均
一にＡｕ合金を蒸着させて電極を形成した。Furthermore, an electrode was formed by uniformly depositing an Au alloy on the back surface of the substrate that would become a single-crystal silicon solar cell.
第１図は、このようにして得られたタンデム型太陽電池
を示す断面図であり、第２図は第１図の実施例の平面図
である。第１図および第２図を参照して、ｐ−シリコン
層２の上にはｎ−シリコン層３が形成され、ｎ−シリコ
ン層３の上にはｐ−ＧａＡｓ層４およびその上のｎ−Ｇ
ａＡｓ層５が第２図に示すようにジグザグ状に形成され
ている。FIG. 1 is a sectional view showing the tandem solar cell thus obtained, and FIG. 2 is a plan view of the embodiment of FIG. 1. Referring to FIGS. 1 and 2, an n-silicon layer 3 is formed on a p-silicon layer 2, a p-GaAs layer 4 is formed on the n-silicon layer 3, and an n- G
The aAs layer 5 is formed in a zigzag shape as shown in FIG.
電極６はｎ−シリコン層３の上に形成され、電極７はｎ
−ＧａＡｓ層５の上に形成されている。また電極１はｐ
−シリコン層２の裏面に一様に形成されている。Electrode 6 is formed on the n-silicon layer 3 and electrode 7 is formed on the n-silicon layer 3.
- formed on the GaAs layer 5; Also, electrode 1 is p
- It is uniformly formed on the back surface of the silicon layer 2.
以上のようなタンデム型太陽電池に、ＡＭｌ。AMl is used for tandem solar cells such as those mentioned above.
５の標準太陽光を照射したところ、中間の電極６と最表
面の電極７の間で開放電圧０．９８Ｖ、短絡電流２２ｍ
Ａ／ｃｍ２であった。中間の電極６と裏面電極１の間で
は０．７ｖ、１４ｍＡ／ｃｍ２であった。When irradiated with standard sunlight of 5, the open circuit voltage was 0.98 V and the short circuit current was 22 m between the middle electrode 6 and the outermost electrode 7.
It was A/cm2. The voltage was 0.7 V and 14 mA/cm2 between the middle electrode 6 and the back electrode 1.
単結晶シリコン太陽電池とその上のＧａＡｓ化′合化生
合物半導体薄膜太陽電池効率は、それぞれ７％と１７％
であり、合計は２４％であった。ＧａＡｓ基板上にＡＩ
！ＧａＡｓ薄膜太陽電池を積層した従来のタンデム型の
太陽電池における変換効率は約２０％であるので、この
従来の太陽電池よりも高い変換効率を示した。The efficiency of monocrystalline silicon solar cells and GaAs compound semiconductor thin film solar cells on them is 7% and 17%, respectively.
The total was 24%. AI on GaAs substrate
! The conversion efficiency of a conventional tandem type solar cell in which GaAs thin film solar cells are stacked is about 20%, so the conversion efficiency was higher than that of this conventional solar cell.
実施例２
実施例１と同様にしてＰ−Ｎ接合が形成された、単結晶
シリコン太陽電池となるシリコン基板をＭＯＶＰＥ装置
中に入れ、水素雰囲気下に９００℃に昇温しで基板上の
表面酸化膜を除去した。次にこの基板を４００℃に降温
し、６００人の厚みのＺｎドープｐ９型ＧａＡｓ層を成
膜した。次に基板を７００℃に昇温し、Ｚｎドープｐ型
のＧａＡＳ層およびＳｉドープｎ型のＧａＡｓ層をそれ
ぞれ３μｍの厚みで成膜した。次に、この上にＡｌｏ、
ｅ Ｇ ａ ｏ、Ａ ｓのアンドープ層０．５μｍを
成長させ、続いてｐ型およびｎ型のＡｌｏ７ＧａＯ、Ａ
ｓ層をそれぞれ６μｍの厚みで成長させた。Example 2 A silicon substrate that would become a single crystal silicon solar cell, on which a P-N junction was formed in the same manner as in Example 1, was placed in an MOVPE apparatus, and the temperature was raised to 900°C in a hydrogen atmosphere to remove the surface of the substrate. The oxide film was removed. Next, the temperature of this substrate was lowered to 400° C., and a Zn-doped p9 type GaAs layer with a thickness of 600 cm was formed. Next, the temperature of the substrate was raised to 700° C., and a Zn-doped p-type GaAs layer and a Si-doped n-type GaAs layer were each formed to a thickness of 3 μm. Next, on top of this, Alo,
Grow a 0.5 μm undoped layer of e Gao, As, followed by p-type and n-type Alo7GaO, A
Each s-layer was grown to a thickness of 6 μm.
第３図はこの実施例を説明するための断面図である。以
上のようにして得られたウェハは、第３図に示すように
ｐ−シリコン層１１の上にｎ−シリコン層１２が積層さ
れ、このｎ−シリコン層１２の上にｐ”−ＧａＡｓ層１
３、ｐ−ＧａＡｓ層１４、ｎ−ＧａＡｓ層１５、アンド
ープＡＡ’ＧａＡｓ層１６、ｐ−ＡｌＧａＡｓ層１７、
およびｎＡＡ’ＧａＡｓＡｌＧａＡｓ層１７構成されて
いる。第３図に示すように、このウェハの端部を斜めに
研磨し、ｎ−シリコン層１２とｐ−ＧａＡｓ層１４の間
の部分に電極２０を形成し、さらにｎ−ＧａＡｓ層１５
の上に電極２１、ｐ−ＡｌＧａＡｓ層１７の上に電極２
２、ｎ−ＡｌＧａＡｓ層１８の上に電極２３を、ｐ−シ
リコン層１１の裏面に電極１９を、それぞれＡｕ合金を
蒸着することにより形成した。FIG. 3 is a sectional view for explaining this embodiment. The wafer obtained in the above manner has an n-silicon layer 12 laminated on a p-silicon layer 11, as shown in FIG.
3, p-GaAs layer 14, n-GaAs layer 15, undoped AA'GaAs layer 16, p-AlGaAs layer 17,
and nAA'GaAsAlGaAs layer 17. As shown in FIG. 3, the edge of this wafer is polished diagonally, an electrode 20 is formed between the n-silicon layer 12 and the p-GaAs layer 14, and an electrode 20 is formed between the n-silicon layer 12 and the p-GaAs layer 14.
An electrode 21 is placed on top of the p-AlGaAs layer 17, and an electrode 2 is placed on top of the p-AlGaAs layer 17.
2. An electrode 23 was formed on the n-AlGaAs layer 18, and an electrode 19 was formed on the back surface of the p-silicon layer 11 by vapor-depositing an Au alloy.
以上のようにして得られたタンデム型太陽電池に、ＡＭ
Ｉ、５の標準太陽光を照射したところ電極２３と電極２
２の間で１．４Ｖ、電極２１と電極２０の間で１．ＯＶ
、電極２０と電極１９の間で０．６Ｖの開放電圧が測定
された。AM
When irradiated with standard sunlight of I, 5, electrode 23 and electrode 2
1.4V between electrodes 21 and 20, and 1.4V between electrodes 21 and 20. O.V.
, an open circuit voltage of 0.6 V was measured between electrode 20 and electrode 19.
また、変換効率は３０％であり、従来のタンデム型太陽
電池より高い値が得られた。Furthermore, the conversion efficiency was 30%, which is higher than that of conventional tandem solar cells.
実施例３
実施例１と同様にＢドープのシリコン基板の表面に、Ａ
ｓを拡散させることによってＰ−Ｎ接合を形成し、単結
晶シリコン太陽電池となり得る基板を形成した。このシ
リコン基板の上に、ＣＶＤ法により多結晶シリコンを２
ｍｍの間隔で網状の電極を作製した。この基板を、ＭＯ
ＶＰＥ装置内にいれ、ＴＭＡ、ＴＭＧ、およびＡｓＨ３
を原料ガスとして、基板温度４００℃で、ｐ” −Ｇａ
ＡＳ層を６００Ａの厚みで成膜した。Example 3 As in Example 1, A was applied to the surface of a B-doped silicon substrate.
By diffusing s, a PN junction was formed, and a substrate that could become a single crystal silicon solar cell was formed. Two layers of polycrystalline silicon are deposited on this silicon substrate using the CVD method.
A net-like electrode was prepared with an interval of mm. This board is MO
In the VPE device, TMA, TMG, and AsH3
p”-Ga as the raw material gas and at a substrate temperature of 400°C.
An AS layer was formed to a thickness of 600A.
基板温度７００℃とし、この上に以下に示すような組成
と厚みの膜を連続して成長させた。The substrate temperature was set to 700° C., and a film having the composition and thickness shown below was successively grown thereon.
第１層：組成Ａｌｏ９Ｇａｏ、Ａｓ ：厚み０゜１μｍ
：電気特性ｎ０
第２層：組成Ａ Ｉ Ｏ，Ｂ Ｇ ａ ｏ、 ２ Ａ
ｓ ：厚み４μｍ；電気特性ｎ
第３層二組成ＡＡ’ｏ、ｓ Ｇａｏ、２ Ａｓ ：厚み
６μｍ；電気特性ｐ
第４層１組成Ａｊ’ｏ９Ｇａｏ、Ｉ Ａｓ ：厚み０゜
１μｍ：電気特性ｎ
第５層：組成Ａ Ｉ ０．３５Ｇ ａ Ｏ，６５Ａ Ｓ
：厚み１μｍ：電気特性ｎ＋
第６層；組成ＧａＡｓ ：厚み１μｍ＝電気特電気
特性層：組成ＧａＡｓ ：厚み３μｍ：電気特性シリコ
ン基板のｐ“−ＧａＡｓ層の上に上記の第７層から第１
層を順次積層させた。ＲＩＥ法で第４層まで選択的にエ
ツチングしてＡｕ合金電極を蒸着して形成した。1st layer: Composition Alo9Gao, As: Thickness 0°1 μm
: Electrical properties n0 2nd layer: Composition A IO, B G a o, 2 A
s: Thickness 4 μm; Electrical properties n 3rd layer two compositions AA'o, s Gao, 2 As: Thickness 6 μm; Electrical properties p 4th layer 1 composition Aj'o9Gao, I As: Thickness 0°1 μm: Electrical properties nth 5 layers: composition A I 0.35G a O, 65A S
: Thickness 1 μm: Electrical properties n+ 6th layer; Composition GaAs: Thickness 1 μm = Electric properties Layer: Composition GaAs: Thickness 3 μm: Electric properties
The layers were stacked one after the other. The fourth layer was selectively etched using the RIE method, and an Au alloy electrode was then deposited.
このようにして得られたタンデム型太陽電池にＡＭｌ、
５の標準太陽光を照射したところ、３箇所のＰ−Ｎ接合
の間にそれぞれ、１．５．１．１、および０．７Ｖの開
放電圧が発生した。また、変換効率は３０％であり、従
来のタンデム型太陽電池よりも高い値を示した。In the tandem solar cell obtained in this way, AMl,
When irradiated with standard sunlight of No. 5, open circuit voltages of 1.5, 1.1 and 0.7 V were generated between the three P-N junctions, respectively. Furthermore, the conversion efficiency was 30%, which is higher than that of conventional tandem solar cells.
第１図は、この発明の一実施例のタンデム型太陽電池を
示す断面図である。
第２図は、第１図の実施例の平面図である。
第３図は、この発明の他の実施例を示す断面図である。
図において、１は電極、２はｐ−シリコン層、３はｎ−
シリコン層、４はｐ−ＧａＡｓ層、５はｎ−ＧａＡｓ層
、−６，７は電極、１１はｐ−シリコン層、１２はｎ−
シリコン層、１３はｐ“−ＧａＡｓ層、１４はｐ−Ｇａ
Ａｓ層、１５はｎ−ＧａＡｓ層、１６はアンドープＡＡ
’ＧａＡｓ層、１７はｐ−ＡＪＧａＡｓ層、１８はｎ−
ＡＪＧａＡＳ層、１９，２０．２１，２２．２３は電極
を示す。
第２図
第３図FIG. 1 is a sectional view showing a tandem solar cell according to an embodiment of the present invention. FIG. 2 is a plan view of the embodiment of FIG. 1. FIG. 3 is a sectional view showing another embodiment of the invention. In the figure, 1 is an electrode, 2 is a p-silicon layer, and 3 is an n-
Silicon layer, 4 is p-GaAs layer, 5 is n-GaAs layer, -6, 7 are electrodes, 11 is p-silicon layer, 12 is n-
Silicon layer, 13 is p"-GaAs layer, 14 is p-Ga
As layer, 15 is n-GaAs layer, 16 is undoped AA
'GaAs layer, 17 is p-AJGaAs layer, 18 is n-
In the AJGaAS layer, 19, 20.21, 22.23 indicate electrodes. Figure 2 Figure 3
Claims (6)
Ｖ以上２．３ｅＶ以下の化合物半導体からなる薄膜太陽
電池とを積み重ねたタンデム構造の太陽電池であって、 前記単結晶シリコン太陽電池および前記化合物半導体の
薄膜太陽電池がヘテロ接合形成技術により一方の上に他
方を連続成長させることによって積み重ねられたもので
ある、タンデム型太陽電池。(1) Single crystal silicon solar cell and forbidden band width of 1.5e
A solar cell having a tandem structure in which thin film solar cells made of a compound semiconductor with a voltage of V or more and 2.3 eV or less are stacked, wherein the single crystal silicon solar cell and the compound semiconductor thin film solar cell are stacked on one side by a heterojunction formation technique. Tandem solar cells are stacked by growing one layer on top of the other layer in succession.
Ｐからなる群より選ばれる少なくとも１種である、請求
項１に記載のタンデム型太陽電池。(2) The compound semiconductor is GaAs, GaP, and In.
The tandem solar cell according to claim 1, wherein the tandem solar cell is at least one selected from the group consisting of P.
ＩｎＡｌＡｓ、ＩｎＡｌＰおよびＧａＩｎＰからなる群
より選ばれる少なくとも１種である、請求項１に記載の
タンデム型太陽電池。(3) The compound semiconductor is AlGaAs, AlGaP,
The tandem solar cell according to claim 1, which is at least one selected from the group consisting of InAlAs, InAlP, and GaInP.
よびＩｎＰからなる群より選ばれる少なくとも１種から
なる第１の化合物半導体薄膜太陽電池と、ＡｌＧａＡｓ
、ＡｌＧａＰ、ＩｎＡｌＡｓ、ＩｎＡｌＰおよびＧａＩ
ｎＰからなる群より選ばれる少なくとも１種であって前
記第１の化合物半導体薄膜太陽電池より禁制帯幅の大き
な化合物半導体からなる第２の化合物半導体薄膜太陽電
池とを積み重ねた、請求項１に記載のタンデム型太陽電
池。(4) A single crystal silicon solar cell, a first compound semiconductor thin film solar cell made of at least one member selected from the group consisting of GaAs, GaP, and InP, and an AlGaAs
, AlGaP, InAlAs, InAlP and GaI
2. A second compound semiconductor thin film solar cell made of at least one compound semiconductor selected from the group consisting of nP and having a larger forbidden band width than the first compound semiconductor thin film solar cell. tandem solar cell.
陽電池と、ＡｌＧａＡｓ薄膜太陽電池を順次連続成長さ
せて積み重ねたタンデム型太陽電池であって、ＡｌＧａ
Ａｓ薄膜太陽電池のＰ−Ｎ接合型光電変換層のアルミニ
ウム組成比が０．６以上であり、かつ前記Ｐ−Ｎ接合型
光電変換層の合計の厚みが５μｍ以上である、請求項１
に記載のタンデム型太陽電池。(5) A tandem solar cell in which a GaAs thin film solar cell and an AlGaAs thin film solar cell are successively grown and stacked on a single crystal silicon solar cell,
Claim 1, wherein the aluminum composition ratio of the P-N junction type photoelectric conversion layer of the As thin film solar cell is 0.6 or more, and the total thickness of the P-N junction type photoelectric conversion layer is 5 μm or more.
The tandem solar cell described in .
層のＧａＡｓ薄膜太陽電池側の導電性がＮ型である請求
項５に記載のタンデム型太陽電池。(6) The tandem solar cell according to claim 5, wherein the GaAs thin film solar cell side of the P-N junction photoelectric conversion layer of the single crystal silicon solar cell has N-type conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2031203A JPH03235370A (en) | 1990-02-10 | 1990-02-10 | Tandem type solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2031203A JPH03235370A (en) | 1990-02-10 | 1990-02-10 | Tandem type solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03235370A true JPH03235370A (en) | 1991-10-21 |
Family
ID=12324861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2031203A Pending JPH03235370A (en) | 1990-02-10 | 1990-02-10 | Tandem type solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03235370A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013070059A (en) * | 2011-09-22 | 2013-04-18 | Boeing Co:The | Multi-layer back surface field layer in solar cell structure |
| CN103378205A (en) * | 2012-04-13 | 2013-10-30 | 杜邦太阳能有限公司 | Solar module |
| JP2014183066A (en) * | 2013-03-18 | 2014-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Solar battery |
-
1990
- 1990-02-10 JP JP2031203A patent/JPH03235370A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013070059A (en) * | 2011-09-22 | 2013-04-18 | Boeing Co:The | Multi-layer back surface field layer in solar cell structure |
| CN103378205A (en) * | 2012-04-13 | 2013-10-30 | 杜邦太阳能有限公司 | Solar module |
| JP2014183066A (en) * | 2013-03-18 | 2014-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Solar battery |
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