JPH03231253A - X-ray electrophotographic sensitive body - Google Patents
X-ray electrophotographic sensitive bodyInfo
- Publication number
- JPH03231253A JPH03231253A JP2654490A JP2654490A JPH03231253A JP H03231253 A JPH03231253 A JP H03231253A JP 2654490 A JP2654490 A JP 2654490A JP 2654490 A JP2654490 A JP 2654490A JP H03231253 A JPH03231253 A JP H03231253A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- photoreceptor
- ray
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は逆転電界法に適したX線電子写真用感光体に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an X-ray electrophotographic photoreceptor suitable for reverse electric field method.
〔従来技術及びその問題点]
1950年、McMas terと5charf fe
r tによりセレン(Se)蒸着層にX線感度があるこ
とが発見され、電子写真の新しい応用分野が開けた。こ
のX線電子写真によれば、医療用X線診断やX″fIA
による非破壊検査などを行った場合、従来の銀塩による
X線写真と比較してコントラストの強い画像が得られる
点が特徴である。[Prior art and its problems] 1950, McMaster and 5charf fe
rt discovered that a selenium (Se) deposited layer has X-ray sensitivity, opening up a new field of application for electrophotography. According to this X-ray electrophotograph, medical X-ray diagnosis and
When non-destructive testing is performed using X-ray photography, it is characterized by the fact that images with higher contrast can be obtained compared to conventional X-ray photography using silver salts.
即ち、アルミニウム(、l)板などの導電性平板状基板
上にSe怒先光層しくはSeと^52Se、或いはSe
と5e−Teを積層した感光層を形成し、このシート状
感光体をカセットもしくはホルダーに入れ、そして、そ
れに開閉可能なシャッターを覆い、感光体を遮光もしく
は保護する。このような構成のX線電子写真用感光体で
あれば、エツジ効果があるために画像の鮮明度並びにコ
ントラストの階調に優れ、微細な構造が鮮明に映し出さ
れる。従って、手、足、肩、頚部のを椎骨や肋骨などの
骨部並びに乳ガン検査などの軟組織の陽射に適している
。That is, on a conductive flat substrate such as an aluminum (,l) plate, an optical layer of Se or Se and ^52Se or Se is formed.
A photosensitive layer is formed by laminating 5e-Te and 5e-Te, and this sheet-like photoreceptor is placed in a cassette or holder, and a shutter that can be opened and closed is covered thereto to shield or protect the photoreceptor from light. An X-ray electrophotographic photoreceptor having such a configuration has excellent image clarity and contrast gradation due to the edge effect, and allows fine structures to be clearly imaged. Therefore, it is suitable for exposing bones such as vertebrae and ribs of hands, feet, shoulders, and neck, as well as soft tissues such as breast cancer examinations.
しかしながら、上記X線電子写真用感光体の場合、蛍光
増感スクリーンとの組合せによるスクリーンタイプのX
線フィルムに比べて感度が数分の1から十分の1位にま
で低くなるという問題点がある。However, in the case of the above-mentioned X-ray electrophotographic photoreceptor, the screen type X
The problem is that the sensitivity is lower than that of line film, ranging from one-tenth to one-tenth.
そのため、例えば、腹部、骨盤、腰部のを椎骨のような
厚い部位に対する曝射については被曝量が多くなり、適
していない。Therefore, for example, it is not suitable for irradiating thick parts such as vertebrae in the abdomen, pelvis, and lumbar region because the amount of radiation will be large.
従って本発明の目的は感度を高めるとともに電荷潜像の
コントラストを高めることができたX線電子写真用感光
体を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a photoreceptor for X-ray electrophotography which is capable of increasing the sensitivity and the contrast of a charge latent image.
第1の発明のX線電子写真用感光体は、X線蛍光体層、
アモルファスシリコン(以下a −5iと略す)層と組
成式S i l−X CxのX値がQ < x <0.
5で表されるアモルファスシリコンカーバイド(以下a
−SiCと略す)層が相互に光学的バンドギャップが異
なるように積層し且つ各層の厚みが20〜500人であ
る無機半導体層、有機半導体層並びに透明絶縁層を順次
積層した構成である。The X-ray electrophotographic photoreceptor of the first invention includes an X-ray phosphor layer,
The X value of the amorphous silicon (hereinafter abbreviated as a-5i) layer and the compositional formula S i l-X Cx satisfies Q < x < 0.
Amorphous silicon carbide represented by 5 (hereinafter a)
-SiC) layers are laminated so that their optical bandgaps are different from each other, and each layer has a thickness of 20 to 500 layers.It has a structure in which an inorganic semiconductor layer, an organic semiconductor layer, and a transparent insulating layer are sequentially laminated.
また第2の発明の感光体はX線蛍光体層、透明導電層、
上記無機半導体層、有機半導体層並びに透明絶縁層を基
板上に順次積層した構成である。Further, the photoreceptor of the second invention includes an X-ray phosphor layer, a transparent conductive layer,
It has a structure in which the above-mentioned inorganic semiconductor layer, organic semiconductor layer, and transparent insulating layer are sequentially laminated on a substrate.
更にまた第3の発明の感光体は透明基板の一生面上にX
線蛍光体層を形成し、且つ少なくとも他主面が導電性を
有するとともに該導電性主面上に上記無機半導体層、有
機半導体層及び透明絶縁層を順次積層した構成である。Furthermore, the photoreceptor of the third invention has X on the entire surface of the transparent substrate.
It has a structure in which a linear phosphor layer is formed, at least the other main surface is electrically conductive, and the above-mentioned inorganic semiconductor layer, organic semiconductor layer, and transparent insulating layer are sequentially laminated on the electrically conductive main surface.
更に第4の発明の感光体はX線螢光体層と組成式s;+
−XcXのX値がO<x<0.5で表されるaSiC層
を積層し且つ各層の厚みが50〜2000人である無機
半導体層、有機半導体層並びに透明絶縁層を導電性基板
上に順次積層した構成である。Furthermore, the photoreceptor of the fourth invention has an X-ray phosphor layer and a composition formula s;+
- An inorganic semiconductor layer, an organic semiconductor layer, and a transparent insulating layer are laminated with aSiC layers in which the X value of It has a sequentially laminated structure.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
第1図、第2図、第3図及び第4図はそれぞれ本発明の
4種類の態様を示す層構成である。FIG. 1, FIG. 2, FIG. 3, and FIG. 4 each show layer configurations showing four types of embodiments of the present invention.
先ず第1図によれば、導電性基板(1)の上にX線蛍光
体層(2)、無機半導体層(3)、有機半導体層(4)
及び透明絶縁層(5)を順次積層する。First, according to FIG. 1, an X-ray phosphor layer (2), an inorganic semiconductor layer (3), and an organic semiconductor layer (4) are formed on a conductive substrate (1).
and a transparent insulating layer (5) are sequentially laminated.
第1図のB様によれば、無機半導体層(3)が従来のS
e層に比べて短波長側の可視光に対して高感度であり、
また、X線螢光体層(2)はX線が照射されると短波長
側の可視光に大きな発光領域がある。そして、X線が有
機半導体層(4)及び無機半導体層(3)を透過し、X
線蛍光体層(2)に到達すると、その受光6二伴って可
視光を照射し、その可視光が無機半導体層(3)で受光
される。このような発光及び受光により感度が顕著に高
められた感光体を用いて逆転電界法により電荷潜像した
場合高いコントラストの電荷潜像が得られた点が特徴で
ある。According to Mr. B in Figure 1, the inorganic semiconductor layer (3) is
It is highly sensitive to visible light on the short wavelength side compared to the e layer,
Furthermore, when the X-ray phosphor layer (2) is irradiated with X-rays, it has a large emission region in visible light on the shorter wavelength side. Then, the X-rays pass through the organic semiconductor layer (4) and the inorganic semiconductor layer (3), and the
When the linear phosphor layer (2) is reached, visible light is emitted along with the light reception 62, and the visible light is received by the inorganic semiconductor layer (3). A feature of the present invention is that when a charge latent image is formed by a reverse electric field method using a photoreceptor whose sensitivity is significantly increased by such light emission and light reception, a charge latent image with high contrast can be obtained.
基板(1)には、銅、黄銅、SUS 、 Al、Niな
どの金属導電体、或いはガラス、セラミフクスなどの絶
縁体の表面に導電性薄膜をコーティングしたものなどが
ある。The substrate (1) may be a metal conductor such as copper, brass, SUS, Al, or Ni, or an insulator such as glass or ceramic coated with a conductive thin film.
この基板(1)はシート状、ベルト状もしくはウェブ状
可撓性導電シートでよい、このようなシートにはA1、
N i 、ステンレスなどの金属シート、或いはポリエ
ステルフィルム、ナイロン、ポリイミドなどの高分子樹
脂の上にA/、Niなどの金属もしくはSnO□、イン
ジウムとスズの複合酸化物:fTO(Indium T
in 0xide)などの透明導電性材料や有機導電性
材料を蒸着など導電処理したものが用いられる。This substrate (1) may be a sheet-like, belt-like or web-like flexible conductive sheet; such a sheet may include A1;
A/, metal such as Ni or SnO□, composite oxide of indium and tin: fTO (Indium T
A transparent conductive material such as (in oxide) or an organic conductive material subjected to conductive treatment such as vapor deposition is used.
X、vI螢光体層(2)には次のような種類が用いられ
る。The following types are used for the X, vI phosphor layer (2).
硫化物系・・・ZnS:Ag、(Zn、Cd)S:八g
、(Zn、Cd)S:Cu 、 (Zn、Cd)S:C
u、Ag等タングステン酸塩系
・・・Ca−04、Mg−04、Ca−04:Pb等テ
ルビウム賦活希土類酸硫化物系
’ ・・YzO’zS:Tb、 Gd20zS:T、
LazOzS:Tb 。Sulfide type...ZnS:Ag, (Zn, Cd)S: 8g
, (Zn, Cd)S:Cu, (Zn,Cd)S:C
u, Ag, etc., tungstate type...Ca-04, Mg-04, Ca-04:Pb, etc. Terbium activated rare earth oxysulfide type'...YzO'zS:Tb, Gd20zS:T,
LazOzS:Tb.
(Y、Gd)zOzs:Tb 1(Y、Gd)zOzs
:Tb、Tm等テルビウム賦活希土類燐酸塩系
” ’ YPO,:Tb 5GdPO,:Tb、 La
PO,:Tb等テルビウム賦活希土類オキシハロゲン化
物系・ ・ ・ La0Br:Tb、 La0B
r:Tb、Tm 。(Y, Gd)zOzs:Tb 1(Y,Gd)zOzs
:Tb, Tm, etc. terbium-activated rare earth phosphate system YPO, :Tb 5GdPO, :Tb, La
PO, :Tb etc. Terbium activated rare earth oxyhalide system... La0Br:Tb, La0B
r: Tb, Tm.
La0C1:Tb、La0C1:Tb、Tm 。La0C1:Tb, La0C1:Tb, Tm.
Gd0Br:Tb、、Gd0C1:Tb等ツリウム賦活
希土類オキシハロゲン化物系・・・La0Br:Tm、
La0C1:Tm等硫酸バリウム系
・・・Ba5O,:Pb、 Ba5Ot:Eu”(Ba
、5r)SO4:Eu”す 等
二価ユーロピウム賦活アルカリ土類金属燐酸塩系・・・
Ba、(PO4)2:Eu2F
(Ba、Sr):I (PO4)2:Eu” 等二価
ユーロピウム賦活アルカリ土類金属弗化ハロゲン化物系
・・BaFCl:Eu”、BaFBr:Eu”BaFC
l:Eu”、Tb 、、BaFBr:Eu”、Tb、B
aFz・BaCl21(C1:Eu”(Ba、Mg)F
z HBaC1z・KCl:Eu24等ヨウ化物系−−
CsI:N’a、 Csr:Tl、 Nal、Kl:T
1等燐酸ハフニウム系
・・・HfP2O,:Cu等
ユーロピウム賦活希土類酸硫化物系
・・・YzOzS:Eu1GdzOzS:Eu 1La
20zS:Eu % (Y、Gd)zOzs:Eu等ユ
ーロピウム賦活希土類酸化物系
・ ・ ・ YJ3:Eu −Gdz03二Eu
。Thulium-activated rare earth oxyhalide system such as Gd0Br:Tb, Gd0C1:Tb...La0Br:Tm,
Barium sulfate system such as La0C1:Tm...Ba5O,:Pb, Ba5Ot:Eu" (Ba
, 5r) SO4:Eu"su divalent europium activated alkaline earth metal phosphate system...
Ba, (PO4)2:Eu2F (Ba, Sr):I (PO4)2:Eu" Equivalent divalent europium activated alkaline earth metal fluoride halide system...BaFCl:Eu", BaFBr:Eu"BaFC
l:Eu'', Tb, BaFBr:Eu'', Tb, B
aFz・BaCl21(C1:Eu”(Ba, Mg)F
z HBaC1z・KCl: Iodide system such as Eu24 --
CsI:N'a, Csr:Tl, Nal, Kl:T
Primary hafnium phosphate system...HfP2O, :Cu etc.Europium activated rare earth oxysulfide system...YzOzS:Eu1GdzOzS:Eu 1La
20zS: Eu % (Y, Gd)zOzs: Europium activated rare earth oxide system such as Eu... YJ3: Eu -Gdz032Eu
.
La、0.:Eus (Y、Gd)zO:+:Eu等ユ
ーロピウム賦活希土類燐酸塩系
・・・YPO4:Eu 、 GdPO4:Eu、 La
PO4:Eu等ユーロビウ・ム賦活希土類バナジン酸塩
系YVOn:Eu % GdVO4:Eu、、LaVO
4:Eu。La, 0. :Eus (Y,Gd)zO:+:Europium-activated rare earth phosphate system such as Eu...YPO4:Eu, GdPO4:Eu, La
PO4: Eu, etc. Eurobium activated rare earth vanadate system YVOn: Eu % GdVO4: Eu, LaVO
4:Eu.
(Y、Gd)VO4:Eu等
これらのX線螢光体層(2)はRF又はECRによるプ
ラズマMOCVD法、スパッタリング法、真空莫着法な
どの薄膜形成手段もしくは螢光体粒子を高分子樹脂等の
結合剤に混合して塗布するという厚膜形成手段により形
成する。(Y, Gd) VO4:Eu, etc. These X-ray phosphor layers (2) can be formed by thin film forming methods such as plasma MOCVD method using RF or ECR, sputtering method, vacuum deposition method, or by coating phosphor particles with polymer resin. It is formed by a thick film forming method of mixing with a binder such as and applying it.
後者の厚膜形成手段に用いられる結合剤として次のもの
が挙げられる。Examples of the binder used in the latter thick film forming means include the following.
蛋白質 ・・・ゼラチン等
ポリサンカライド・・・デキストラン等天然高分子物質
・・・アラビアゴム等合成高分子物質 ・・・
ポリビニルブチラール、ポリ酢酸ビニル、ニトロセルロ
ース、エチルセルロース、塩化ヒニリデン・塩化ビニル
コポリマー、ポリアルキル(メタ)アクリレート、塩化
ビニル・酢酸ビニルコポリマー、ポリウレタン、セルロ
ースアセテートブチレート、ポリビニルアルコール、線
状ポリエステル等
就中、ニトロセルロース、線状ポリエステル、ポリアル
キル(メタ)アクリレート、ニトロセルロースと線状ポ
リエステルとの混合物、ニトロセルロースとポリアルキ
ル(メタ)アクリレートとの混合物が螢光体粒子の分散
性や、塗膜形成の安定性、螢光に対する透明性に優れる
という点で望ましい。Proteins...Gelatin and other polysancharides...Natural polymeric substances such as dextran...Synthetic polymeric substances such as gum arabic...Polyvinyl butyral, polyvinyl acetate, nitrocellulose, ethylcellulose, hynylidene chloride/vinyl chloride copolymer, Polyalkyl (meth)acrylate, vinyl chloride/vinyl acetate copolymer, polyurethane, cellulose acetate butyrate, polyvinyl alcohol, linear polyester, among others, nitrocellulose, linear polyester, polyalkyl (meth)acrylate, nitrocellulose and linear A mixture with polyester and a mixture of nitrocellulose and polyalkyl (meth)acrylate are desirable because they are excellent in the dispersibility of phosphor particles, the stability of coating film formation, and the transparency to fluorescence.
かかるX線螢光体層(2)の厚みについては、薄膜であ
る場合には1〜10μ閣、好適には2〜8μ閣、厚膜で
ある場合には20〜500μ−1好適には30〜300
μ量であればよい。The thickness of the X-ray phosphor layer (2) is 1 to 10 μm if it is a thin film, preferably 2 to 8 μm, and preferably 20 to 500 μm if it is a thick film. ~300
Any μ amount is sufficient.
無機半導体層(3)については、a−5i層とa−5i
CFflを組合わせて交互に積層した超格子構造の層構
成であり、両者の層の光学的バンドギャップ(以下光学
的バンドギャップをEgと略す)が相互に異なるように
し、しかも、各々の層の厚みを所定通りの範囲に設定し
、これにより、光キャリアの発生量を高め、また、その
光キャリアの移動度を高めるとともに寿命を長くし、そ
の結果、光感度が高くなり、残留電位が小さくなる。Regarding the inorganic semiconductor layer (3), the a-5i layer and the a-5i
It has a superlattice structure layer structure in which CFfls are combined and laminated alternately, and the optical band gap of both layers (hereinafter referred to as optical band gap is abbreviated as Eg) is made to be different from each other. By setting the thickness within a predetermined range, this increases the amount of photocarriers generated, increases the mobility of the photocarriers, and lengthens the lifetime, resulting in high photosensitivity and low residual potential. Become.
上記各々の層の厚みは20〜500人、好適には30〜
300人の範囲に設定すればよく、この範囲により光感
度が顕著に高くなる。各々の層の厚みが20人未満の場
合には、超格子構造内で発生したキャリアのトンネル効
果による伝導が十分に得られず、キャリアの良好な走行
性や寿命が得られない。The thickness of each of the above layers is 20 to 500 people, preferably 30 to 500 people.
It is sufficient to set the range to 300 people, and this range significantly increases the light sensitivity. When the thickness of each layer is less than 20 layers, sufficient conduction due to the tunneling effect of carriers generated within the superlattice structure cannot be obtained, and good running properties and life of the carriers cannot be obtained.
また、500 人を越えると、トンネル効果で得たキャ
リアの運動エネルギーが各層内での散乱により失われ、
キャリアの良好な走行性や寿命が得られない。Furthermore, when the number of people exceeds 500, the kinetic energy of carriers obtained by the tunnel effect is lost due to scattering within each layer.
Good runnability and life of the carrier cannot be obtained.
また上記各々の層はいずれも優れた光導電性があればよ
く、そのためには一方のa−3iC層の組成を次の通り
に設定すればよい。Further, each of the above layers only needs to have excellent photoconductivity, and for this purpose, the composition of one a-3iC layer may be set as follows.
組成式 5il−XCX
0<X<0゜5
好適には
0.05 < x <0.4
上記X値が0.5以上の場合には光導電層が著しく低く
なり、光キャリアの励起機能が低下する。Composition formula 5il-XCX 0<X<0゜5 Preferably 0.05<x<0.4 When the above X value is 0.5 or more, the photoconductive layer becomes extremely low, and the photocarrier excitation function is impaired. descend.
a −Si層についても優れた光導電層を備えていれば
よく、しかも、上記a −5iCJiiとEgが異なる
範囲内でa −Si層にゲルマニウム(Ge) 、スズ
(Sn)、酸素(0)、窒素(N)及びカーボン(C)
から選択した少なくとも一種の元素を含有させてもよい
。The a-Si layer only needs to have an excellent photoconductive layer, and the a-Si layer may contain germanium (Ge), tin (Sn), and oxygen (0) within the range where Eg is different from the a-5iCJii above. , nitrogen (N) and carbon (C)
It may also contain at least one element selected from.
このような超格子構造の無機半導体層(3)には水素(
H)元素やハロゲン元素がダングリングボンド終端用に
含有されるが、これらの元素のなかでH元素が終端部に
取り込まれ易く、これによってEgのなかの局在準位密
度が#、滅するという点で望ましい。また、上記無機半
導体層(3)の厚みは0゜05〜5μm、好適には0.
1〜3μmの範囲であればよく、この範囲内であれば、
高い光感度が得られ、残留電位が低くなる。The inorganic semiconductor layer (3) with such a superlattice structure contains hydrogen (
H) elements and halogen elements are contained for the termination of dangling bonds, but among these elements, the H element is easily incorporated into the termination, which causes the localized level density in Eg to disappear. desirable in that respect. Further, the thickness of the inorganic semiconductor layer (3) is 0.05 to 5 μm, preferably 0.05 to 5 μm.
It is sufficient if it is in the range of 1 to 3 μm, and within this range,
High photosensitivity is obtained and residual potential is low.
更にまた無機半導体層(3)に周期律表の第ma族元素
(以下ma族元素と略す)や第Va族元素(以下Va族
元素と略す)を含有させて負帯電用又は正帯電用に適し
た電子写真感光体ができる。Furthermore, the inorganic semiconductor layer (3) may be made to contain a Group Ma element (hereinafter abbreviated as Ma group element) or a Group Va element (hereinafter abbreviated as Va group element) of the periodic table for negative charging or positive charging. A suitable electrophotographic photoreceptor can be produced.
nla族元素を1〜11000pp含有させた場合には
負帯電用となり、また、Va族元素を500ppm以下
で含有させた場合もしくはこれらの兄事を含有させない
場合には正帯電用に好適となる。When the NLA group element is contained in an amount of 1 to 11,000 ppm, it is suitable for negative charging, and when the Va group element is contained in an amount of 500 ppm or less, or when these older elements are not contained, it is suitable for positive charging.
上記I[1a族元素にはB、^1. Ga+ Inなど
の元素があるが、B元素が共有結合性に優れて半導体特
性を敏感に変え得る点で、その上、優れた帯電能及び光
感度が得られるという点で望ましい。The above I [group 1a elements include B, ^1. Although there are elements such as Ga + In, element B is preferable because it has excellent covalent bonding properties and can sensitively change semiconductor properties, and also provides excellent charging ability and photosensitivity.
またVa族元素にはN、 P、 As、 Sb、旧な
どの元素があるが、P元素を用いる方が上記と同じ理由
により望ましい。Further, Va group elements include elements such as N, P, As, Sb, and old, but it is preferable to use the P element for the same reason as above.
このような無機半導体層(3)を形成するにはグロー放
電分解法、イオンブレーティング法、反応性スパッタリ
ング法、真空蒸着法、CVD法などの薄膜形成方法があ
る。To form such an inorganic semiconductor layer (3), there are thin film forming methods such as a glow discharge decomposition method, an ion blating method, a reactive sputtering method, a vacuum evaporation method, and a CVD method.
また、本発明の感光体は有機半導体層(4)の材料選択
により負帯電型又は正帯電型に設定することができる。Further, the photoreceptor of the present invention can be set to be a negatively charged type or a positively charged type by selecting a material for the organic semiconductor layer (4).
即ち、負帯電型感光体の場合、有機半導体層(4)に電
子供与性化合物が選ばれ、一方、正帯電型感光体の場合
には有機半導体層(4)に電子吸引性化合物が選ばれる
。That is, in the case of a negatively charged photoreceptor, an electron-donating compound is selected for the organic semiconductor layer (4), while in the case of a positively charged photoreceptor, an electron-withdrawing compound is selected for the organic semiconductor layer (4). .
電子供与性化合物には高分子量のものとしてポリ−N−
ビニルカルバゾール、ポリビニルピレン、ポリビニルア
ントラセン、ピレン−ホルムアルデヒド縮重合体などが
あり、また、低分子量のものとしてオキサジアゾール、
オキサゾール、ピラゾリン、トリフェニルメタン、ヒド
ラゾン、トリアリールアミン、N−フェニルカルバゾー
ル、スチルベンなどがあり、この低分子物質はポリカー
ボネート、ポリエステル、メタアクリル樹脂、ポリアミ
ド、アクリルエポキシ、ポリエチレン、フエノール、ポ
リウレタン、ブチラール樹脂、ポリ酢酸ビニル、ユリア
樹脂などのバインダに分散して用いられる。Electron-donating compounds include poly-N-
Examples include vinylcarbazole, polyvinylpyrene, polyvinylanthracene, pyrene-formaldehyde condensation polymer, and low molecular weight ones such as oxadiazole,
These include oxazole, pyrazoline, triphenylmethane, hydrazone, triarylamine, N-phenylcarbazole, and stilbene.These low-molecular substances include polycarbonate, polyester, methacrylic resin, polyamide, acrylic epoxy, polyethylene, phenol, polyurethane, and butyral resin. It is used after being dispersed in a binder such as polyvinyl acetate or urea resin.
電子吸引性化合物には2.4.7− )リニトロフルオ
レノンなどがある。Electron-withdrawing compounds include 2.4.7-)linitrofluorenone.
有機半導体層は浸漬塗工方法又はコーティング法により
形成する。前者は感光材が溶媒中に分散された塗工液の
中に浸漬し、次いで、一定な速度で引き上げ、そして、
自然乾燥及び熱エージング(約150℃、約1時間)を
行うという方法であり、また、後者のコーティング法に
よれば、コーター <=n>を用いて、溶媒に分散され
た感光材を塗布し、次いで熱風乾燥を行う。The organic semiconductor layer is formed by a dip coating method or a coating method. In the former method, the photosensitive material is immersed in a coating solution in which it is dispersed in a solvent, then pulled up at a constant speed, and then
This method involves natural drying and heat aging (approximately 150°C, approximately 1 hour), and the latter coating method involves applying a photosensitive material dispersed in a solvent using a coater <=n>. , followed by hot air drying.
透明絶縁層(5)は有機材料もしくは無機材料のいずれ
によって形成してもよい。The transparent insulating layer (5) may be formed of either an organic material or an inorganic material.
有機材料であれば、マイラー、ポリカーボネート、ポリ
エステル、ポリバラキシレンなどが挙げられ、それを塗
布或いは葎着などの方法により形成する。Examples of organic materials include mylar, polycarbonate, polyester, polyvaraxylene, etc., and are formed by coating or gluing.
無機材料としては充分に大きな光学的パンドギャフプが
あって可視光に透光性があり、且つ高抵抗な材料が選ば
れ、例えばアモルファス状のシリコン、シリコンカーバ
イド、シリコンナイトライド、シリコンオキサイド、シ
リコンオキシカーバイド、シリコンオキシナイトライド
などがあり、それを薄膜形成手段により形成する。Inorganic materials are selected that have a sufficiently large optical breadth, are transparent to visible light, and have high resistance, such as amorphous silicon, silicon carbide, silicon nitride, silicon oxide, and silicon oxycarbide. , silicon oxynitride, etc., which are formed by thin film forming means.
透明絶縁層(5)の厚みは2〜50μ■、好適には5〜
25μ−にすればよく、2μ蒙未満の場合には、このN
(5)で十分な電位が保持できず、これにより、表面電
位を高めたり、電位コントラストを高めることができな
くなり、また、繰返し使用した場合、摩耗により寿命も
劣る。50μmを越えた場合には精細な電荷パターンを
形成するに当たって、このN(5)中で電界(1を気力
wA)が膜面方向に広がりを生じ、これにより、解像力
の低下をきたし、十分な解像度が得られない。The thickness of the transparent insulating layer (5) is 2 to 50μ, preferably 5 to 50μ
If it is less than 2μ, this N
In (5), a sufficient potential cannot be maintained, and as a result, the surface potential cannot be increased or the potential contrast cannot be increased, and when used repeatedly, the life is shortened due to wear. If it exceeds 50 μm, the electric field (1 is the electric force wA) in this N(5) will spread in the direction of the film surface when forming a fine charge pattern, resulting in a decrease in resolution and insufficient Can't get resolution.
かくして第1図の態様によれば、短波長側の可視光に対
して高い感度を有する無機半導体層(3)を形成したこ
とにより高感度となり、しかも、透明絶縁層(5)を形
成したことにより逆転電界法を用いて電荷潜像のコント
ラストを高めたx441Ait子写真用感光体を提供す
ることができた。Thus, according to the embodiment of FIG. 1, high sensitivity is achieved by forming the inorganic semiconductor layer (3) that has high sensitivity to visible light on the short wavelength side, and moreover, the transparent insulating layer (5) is formed. As a result, it was possible to provide an x441Ait photographic photoreceptor in which the contrast of the charge latent image was enhanced using the reverse electric field method.
次に第2図のpG様においては、基板(6)の上にX線
螢光体層(2)、透明導電層(7)、無機半導体層(3
)、有機半導体層(4)及び透明絶縁層(5)を順次積
層する層構成であり、第1図の態様に比べて透明導電層
(7)を形成しており、そして、X線が透明絶縁層(5
)、有機半導体層(4)、無機半導体層(3)、透明導
電層(7)を透過し、X線螢光体層(2)に到達すると
、その受光に従って可視光を照射し、その可視光が透明
導電層(7)を介して無機半導体層(3)で受光され、
このような発光及び受光により感度が顕著に高められた
点が特徴である。Next, in the case of pG shown in Fig. 2, on the substrate (6) there is an
), an organic semiconductor layer (4) and a transparent insulating layer (5) are sequentially laminated, and compared to the embodiment shown in Fig. 1, a transparent conductive layer (7) is formed, and X-rays are transparent. Insulating layer (5
), the organic semiconductor layer (4), the inorganic semiconductor layer (3), and the transparent conductive layer (7). The light is received by the inorganic semiconductor layer (3) via the transparent conductive layer (7),
The feature is that the sensitivity is significantly increased by such light emission and light reception.
この構成のXvA螢光体Fii(2)、無機半導体層(
3)、有機半導体層(4)及び透明絶縁N(5)は第1
図の態様に示すそれぞれの層と同一にすればよい。The XvA phosphor Fii (2) with this configuration, the inorganic semiconductor layer (
3), the organic semiconductor layer (4) and the transparent insulation N (5) are the first
It may be the same as each layer shown in the embodiment of the figure.
また、無機半導体FJ (3)で発生した光キャリアの
一部は透明導電層(7)へ流れるので基板(6)は導電
性もしくは絶縁性のいずれでもよい。Furthermore, since some of the photocarriers generated in the inorganic semiconductor FJ (3) flow to the transparent conductive layer (7), the substrate (6) may be either conductive or insulating.
基板(6)が導電性であれば、前記基板(1)と同じで
よく、絶縁性であれば、ガラス或いはポリエステルフィ
ルム等の高分子材料シート等がある。If the substrate (6) is conductive, it may be the same as the substrate (1), and if it is insulative, it may be glass or a polymeric sheet such as a polyester film.
透明導を層(7)にはITO、5nOzなどがあり、そ
の形成手段にはスパッタリング法、蒸着法、塗布法など
がある。The transparent conductive layer (7) is made of ITO, 5nOz, etc., and its formation methods include sputtering, vapor deposition, and coating.
かくして第2図の態様においても高感度なX線電子写真
用感光体を提供することができた。Thus, even in the embodiment shown in FIG. 2, a highly sensitive X-ray electrophotographic photoreceptor could be provided.
第3図の態様においては、透明基板(8)の−主面上に
X線螢光体層(2)を形成し、また、他主面は少なくと
も導電性であり、その他主面上に順次無機半導体層(3
)、有機半導体層(4)及び透明絶縁層(5)を積層す
る層構成であり、そして、X線が透明絶縁層(5)、有
機半導体層(4)、無機半導体層(3)及び透明基板(
8)を透過し、X線螢光体層(2)に到達すると、その
受光に伴って可視光を照射し、その可視光が透明基板(
8)を介して無機半導体層(3)で受光され、この発光
及び受光により感度が高められ、また透明絶縁層(5)
を形成したことにより逆転電界法を用いて電荷潜像のコ
ントラストが顕著に高められた点が特徴である。In the embodiment shown in FIG. 3, an X-ray phosphor layer (2) is formed on the main surface of the transparent substrate (8), and the other main surface is at least electrically conductive, and Inorganic semiconductor layer (3
), an organic semiconductor layer (4), and a transparent insulating layer (5) are laminated, and substrate(
8) and reaches the X-ray phosphor layer (2), visible light is emitted as the light is received, and the visible light is transmitted through the transparent substrate (2).
The light is received by the inorganic semiconductor layer (3) via the transparent insulating layer (5), and the sensitivity is increased by this light emission and light reception.
It is characterized by the fact that the contrast of the charge latent image is significantly enhanced by forming a reverse electric field method.
この構成のX線螢光体層(2)、無機半導体層(3)、
有機半導体層(4)及び透明絶縁層(5)は第1図の態
様に示すそれぞれの層と同一であればよい。An X-ray phosphor layer (2) with this configuration, an inorganic semiconductor layer (3),
The organic semiconductor layer (4) and the transparent insulating layer (5) may be the same as the respective layers shown in the embodiment of FIG.
また、透明基板(8)は、その全体に亘って透明導電性
であっても、もしくは一方の主面だけを導電処理したも
のであってもよい。前者の場合にはITO、Snugか
ら成る板状体があり、後者の場合であれば、例えば透明
な絶縁性樹脂基板上に^l。Further, the transparent substrate (8) may be transparent conductive over its entirety, or may be electrically conductive on only one main surface. In the former case, there is a plate-like body made of ITO or Snug, and in the latter case, for example, it is placed on a transparent insulating resin substrate.
Ni、^g+ Au、 Cr、 Ttなどの金属層を薄
く蒸着して透明性を維持せしめたり、或いはITO,5
nOzなどの透明導電層を形成してもよい。A thin metal layer such as Ni, ^g+ Au, Cr, or Tt is deposited to maintain transparency, or ITO, 5
A transparent conductive layer such as nOz may also be formed.
かくして第3図の態様においても高怒度且つ高コントラ
ストなX線電子写真用感光体を提供することができた。In this manner, also in the embodiment shown in FIG. 3, it was possible to provide a photoreceptor for X-ray electrophotography with a high degree of anger and a high contrast.
第4図の態様においては、導電性基板(1)の上に下記
無機半導体層(9)及び有機半導体層(4)を順次積層
した層構成であり、本発明は無機半導体層(9)にX線
の受光並びに電荷発生の機能をもたせ、有機半導体N(
4)に電荷輸送機能をもたせ、かかる機能分離型感光体
によりXvAの感度を顕著に高めたことが特徴である。In the embodiment shown in FIG. 4, the layer structure is such that the following inorganic semiconductor layer (9) and organic semiconductor layer (4) are sequentially laminated on the conductive substrate (1), and the present invention is applied to the inorganic semiconductor layer (9). The organic semiconductor N(
4) has a charge transport function, and is characterized in that the sensitivity of XvA is significantly increased by using such a functionally separated photoreceptor.
先ず無機半導体層(9)については、xvA螢光体層と
a −5iC層を組合わせて交互に積層した層構成であ
り、しかも、各々の層の厚みを所定通りの範囲に設定し
、これにより、X線の受光に伴う可視光、特に短波長側
の可視光の照射量を高め、加えて、その可視光をa −
5iC層により効率的に受光し、これにより、無機半導
体層(9)のx′ia受光に伴う光キヤリア発生量を増
大せしめる。First, the inorganic semiconductor layer (9) has a layer structure in which an xvA phosphor layer and an a-5iC layer are combined and laminated alternately, and the thickness of each layer is set within a predetermined range. This increases the amount of visible light that accompanies the reception of X-rays, especially visible light on the short wavelength side, and in addition, the visible light is
The 5iC layer efficiently receives light, thereby increasing the amount of optical carriers generated as x'ia light is received by the inorganic semiconductor layer (9).
かかる作用効果を得んがためには上記各々の層の厚みは
それぞれ50〜2000人、好適には50〜1000人
の範囲に設定すればよい。この厚みが50人未満の場合
にはX線螢光体層がX線を受けて発光する特性並びにa
−5iC層が光を吸収してキャリアを発生する特性が共
に不十分となり、良好なキャリア励起特性が得られない
。また、2000人を越えると、X線螢光体層の発光及
びa −5iC層の光吸収が十分に大きくなるが、その
反面、a −5iCrWJで発生したキャリアがXLI
IA螢光体層中をトンネル効果により良好に走行するこ
とができなくなり、その結果、良好なキャリア励起特性
が得られない。In order to obtain such effects, the thickness of each of the above layers may be set within a range of 50 to 2,000 people, preferably 50 to 1,000 people. If this thickness is less than 50, the characteristics of the X-ray phosphor layer emitting light upon receiving X-rays and a
The characteristics of the −5iC layer absorbing light and generating carriers are both insufficient, and good carrier excitation characteristics cannot be obtained. Furthermore, when the number of people exceeds 2000, the emission of the X-ray phosphor layer and the light absorption of the a-5iC layer become sufficiently large, but on the other hand, the carriers generated in the a-5iCr WJ become
Due to the tunnel effect, the carrier cannot travel well in the IA phosphor layer, and as a result, good carrier excitation characteristics cannot be obtained.
上記積層構成の一方の層であるa −5iC層について
は、次の通りの組成に設定すればよい。The composition of the a-5iC layer, which is one of the layers in the above laminated structure, may be set as follows.
組成式Si、−、CX
Q < x <Q、5
好適には
0.05< x < 0.4
上記X値が0.5以上の場合には光導電性が著しく低く
なり、光キャリアの励起機能が低下する。Compositional formula: Si, -, CX Q < x < Q, 5 Preferably 0.05 < x < 0.4 When the above X value is 0.5 or more, the photoconductivity becomes extremely low and the excitation of photocarriers Function deteriorates.
このようなa−SiC層には水素(H)元素やハロゲン
元素がダングリングボンド終端用に含有されるが、これ
らの元素のなかでH元素が終端部に取り込まれ易く、こ
れによってEgのなかの局在準位密度が低減するという
点で望ましい。Such a-SiC layer contains hydrogen (H) element and halogen element for dangling bond termination, but among these elements, H element is easily incorporated into the termination part, and this causes This is desirable in that the localized level density of is reduced.
またa−SiC層にma元素や第Va族元素を含有させ
て負帯電用または正常電用に適した電子写真感光体がで
きる。Further, by incorporating a Ma element or a Group Va element into the a-SiC layer, an electrophotographic photoreceptor suitable for negative charging or normal charging can be obtained.
■a族元素を1〜11000pp含有させた場合には負
帯電用となり、また、Va族元素を500ppm以下で
含有させた場合もしくはこれらの元素を含有させない場
合には正帯電用に好適となる。(2) When the A-group element is contained in an amount of 1 to 11,000 ppm, it is suitable for negative charging, and when the Va-group element is contained in an amount of 500 ppm or less, or when these elements are not contained, it is suitable for positive charging.
尚、上記4種類の各態様によれば、いずれも有機半導体
層(4)側よりX線を照射した場合で説明されているが
、その反対側よりX線を照射した場合にも同様な作用効
果が得られる。In addition, according to each of the above-mentioned four types, although the case where X-rays are irradiated from the organic semiconductor layer (4) side is explained, the same effect can be obtained when X-rays are irradiated from the opposite side. Effects can be obtained.
また本実施例の逆転電界法を第5図に示す電荷潜像プロ
セスでもって説明する。Further, the reverse electric field method of this embodiment will be explained using the charge latent image process shown in FIG.
同図(A)によれば、(10)は基板であり、(11)
は無機半導体層(3)、有機半導体層(4) 、XvA
螢光体層(2)などから成る感光層であり、(12)は
透明絶縁層である。According to the same figure (A), (10) is the substrate, (11)
are inorganic semiconductor layer (3), organic semiconductor layer (4), XvA
It is a photosensitive layer consisting of a phosphor layer (2) and the like, and (12) is a transparent insulating layer.
(B)においては、透明絶縁層(12)の表面に可視光
で全面に露光しながらコロナ帯電を行い、光励起された
キャリアと、基板(10)から注入されたキャリアが感
光層(11)の内部を移動し、その結果、透明絶縁層(
12)の表面にコロナと同極性の電荷が誘起され、透明
絶縁層(12)と感光層(11)との界面に逆極性の電
荷が誘起される。In (B), corona charging is performed on the surface of the transparent insulating layer (12) while the entire surface is exposed to visible light, and the photo-excited carriers and the carriers injected from the substrate (10) are transferred to the photosensitive layer (11). moving inside, resulting in a transparent insulating layer (
Charges of the same polarity as the corona are induced on the surface of the transparent insulating layer (12) and the photosensitive layer (11), and charges of opposite polarity are induced on the interface between the transparent insulating layer (12) and the photosensitive layer (11).
そして、(C)に示す通りX線による画像露光を行いな
がら(B)のコロナ帯電と逆極性のコロナ帯電を行った
場合、画像露光を行った領域(イ)では光励起されたキ
ャリアと、基板(10)から注入されたキャリアにより
(B)にて表面に蓄積された電荷がすみやかに打ち消さ
れ、新たにその逆極性の電荷が誘起される。また、画像
露光を行わない領域(ロ)では透明絶縁層(12)の表
面電荷の一部のみが中和され、透明絶縁層(12)と感
光層(11)の界面に蓄積された電荷は残存する。As shown in (C), when corona charging with the opposite polarity to the corona charging in (B) is performed while performing image exposure with X-rays, photoexcited carriers and substrate The carriers injected from (10) quickly cancel out the charges accumulated on the surface at (B), and new charges of the opposite polarity are induced. In addition, in the area (b) where image exposure is not performed, only a part of the surface charge of the transparent insulating layer (12) is neutralized, and the charge accumulated at the interface between the transparent insulating layer (12) and the photosensitive layer (11) is remain.
次に(D)に示す通り表面の全面に亘って可視光により
一様な露光を行った場合、(C)において領域(ロ)の
透明絶縁J!!(12)と感光層(11)の界面に蓄積
された電荷は光励起されたキャリアと基板(10)から
注入されたキャリアにより透明絶縁層(12)の表面の
電荷と同数にまで減少し、(E)に示す通りになる。そ
の結果、コントラストが高められた潜像が得られる。Next, when the entire surface is uniformly exposed to visible light as shown in (D), in (C), the transparent insulation J! ! The charges accumulated at the interface between (12) and the photosensitive layer (11) are reduced to the same number as the charges on the surface of the transparent insulating layer (12) by photoexcited carriers and carriers injected from the substrate (10), and ( It will be as shown in E). As a result, a latent image with enhanced contrast is obtained.
次にAl製導電性基板上に下記方法により各層を形成す
る場合を例にとって実施例を説明する。Next, an example will be described taking as an example a case in which each layer is formed on an Al conductive substrate by the following method.
X線螢光体層・・・MOCVD法
a −5iC層 ・・・RFブラズ7CVD法有機半導
体層・・・コーティング法
透明絶縁層 ・・・塗布法
また本実施例に用いられるグロー放電分解装置を第6図
により説明する。X-ray phosphor layer...MOCVD method a-5iC layer...RF Blaze 7CVD method Organic semiconductor layer...Coating method Transparent insulating layer...Coating method and glow discharge decomposition device used in this example This will be explained with reference to FIG.
図中、第1タンク(13)、第2タンク(14)、第3
タンク(15)、第4タンク(16)、第5タンク(1
7)にはそれぞれ5iHa、 CJz、 NH3,Bz
Ha(Hzガスで希釈されている)及びH2で密封され
、これらのガスは各々対応する第1調整弁(18) 、
第2調整弁(19)、第3調整弁(20)、第4調整弁
(21)及び第5調整弁(22)を開放することにより
放出される。その放出ガスの流量はそれぞれマスフロー
コントローラ(23) (24) (25) (26)
(27)により制御され、各々のガスは混合されて主
管(28)へ送られる。尚、(29) (31)は止め
弁である。In the figure, the first tank (13), the second tank (14), and the third tank
Tank (15), 4th tank (16), 5th tank (1
7) respectively 5iHa, CJz, NH3, Bz
sealed with Ha (diluted with Hz gas) and H2, each of which is connected to a corresponding first regulating valve (18);
It is released by opening the second regulating valve (19), the third regulating valve (20), the fourth regulating valve (21), and the fifth regulating valve (22). The flow rate of the released gas is determined by the mass flow controller (23) (24) (25) (26).
(27), each gas is mixed and sent to the main pipe (28). Note that (29) and (31) are stop valves.
主管(28)を通じて流れるガスは反応管(31)へ流
入するが、この反応管(31)の内部には容量結合型放
電用電極(32)が設置され、また、筒状の成膜用基板
(33)が基板支持体(34)の上に載置され、基板支
持体(34)がモータ(35)により回転駆動され、こ
れに伴って基板(33)が回転する。そして、電極(3
2)に電力50−〜3に一1周波数1〜50MHzの高
周波電力を印加し、しかも、基板(33)を適当な加熱
手段により約200〜400℃、好適には約200〜3
50℃の温度に加熱する。また、反応管(31)は回転
ポンプ(36)と拡散ポンプ(37)に連結されており
、これによってグロー放電による成膜形成時に所要な真
空状態(放電時のガス圧0.01〜2.0Torr)が
維持される。Gas flowing through the main pipe (28) flows into the reaction tube (31), and a capacitively coupled discharge electrode (32) is installed inside this reaction tube (31), and a cylindrical film-forming substrate (33) is placed on a substrate support (34), the substrate support (34) is rotationally driven by a motor (35), and the substrate (33) rotates accordingly. Then, the electrode (3
2) Apply high frequency power with a frequency of 1 to 50 MHz to 3), and heat the substrate (33) to about 200 to 400° C., preferably about 200 to 300° C., by appropriate heating means.
Heat to a temperature of 50°C. In addition, the reaction tube (31) is connected to a rotary pump (36) and a diffusion pump (37), which create a vacuum state (gas pressure at the time of discharge of 0.01 to 2.0 mm) required during film formation by glow discharge. 0 Torr) is maintained.
このような構成のグロー放電分解装置を用いて基板(3
3)の上にa−SiC層を形成する場合、第1調整弁(
18)、第2調整弁(19)及び第5調整弁(22)を
開いてSi1(a、 CzHz+ Hzの各々のガスを
放出し、その放出量をマスフローコントローラ(23)
(24)(27)により制御し、各々のガスは混合さ
れて主管(28)を介して反応管(31)へ流入する。The substrate (3
3) When forming an a-SiC layer on top of the first regulating valve (
18), the second regulating valve (19) and the fifth regulating valve (22) are opened to release each gas of Si1(a, CzHz+Hz), and the released amount is controlled by the mass flow controller (23).
(24) and (27), each gas is mixed and flows into the reaction tube (31) via the main pipe (28).
そして、反応管内部の真空状態、基板温度、電極印加用
高周波電力をそれぞれ所定の条件に設定するとグロー放
電が発生し、ガスの分解に伴ってa−5iC膜が基板上
に高速に形成する。Then, when the vacuum state inside the reaction tube, the substrate temperature, and the high-frequency power applied to the electrodes are set to predetermined conditions, a glow discharge occurs, and an a-5iC film is rapidly formed on the substrate as the gas decomposes.
(例1) 本例においては第1図の態様の感光体を作製した。(Example 1) In this example, a photoreceptor having the embodiment shown in FIG. 1 was produced.
先ずAl製導電性基板の上にMOCVD法によりX線螢
光体層である厚み3μmのZnS層を形成した。First, a ZnS layer having a thickness of 3 μm as an X-ray phosphor layer was formed on an Al conductive substrate by MOCVD.
このMOCVD法によれば、原料ガスとしてジメチル亜
鉛Zn(CHi)zと硫化水素H2Sを用いることによ
りZnS層を気相成長させる。そして、更に銅(Cu)
及びアルミニウム(Aりを適当量加えんがためにβ−ジ
ケトネイト化合物C0(CslbOi)zとトリエチル
アルミニウムA j! (CJs)sを添加する。According to this MOCVD method, a ZnS layer is grown in a vapor phase by using dimethylzinc Zn(CHi)z and hydrogen sulfide H2S as source gases. And further copper (Cu)
In order to add an appropriate amount of aluminum (A), β-diketonate compound C0 (CslbOi)z and triethylaluminum Aj! (CJs)s are added.
次に上記ZnS層の上に第1表の成膜条件のRFブラズ
TCVD法によりa−SiC層/a −Si層から成る
超格子構造の無機半導体層(3)を厚み1μ鐘で積層す
る。尚、この層(3)の組成はXMA法により測定した
。Next, on the ZnS layer, an inorganic semiconductor layer (3) having a superlattice structure consisting of an a-SiC layer/a-Si layer is laminated to a thickness of 1 μm using the RF Blaze TCVD method under the film-forming conditions shown in Table 1. The composition of this layer (3) was measured by the XMA method.
然る後、有機半導体層(4)を厚み20μmで形成した
。その形成によれば、2.4.7− )リニトロフルオ
レノンを1.4−ジオキサンのン容、114こ入れて?
容かし、更にポリエステル樹脂(レフサン−LS2−1
1)を加え、超音波分散を40分間行った。これによっ
て得た溶液をバー・コーターを用いて塗布し、次いで8
0℃にて熱風乾燥を行った。After that, an organic semiconductor layer (4) was formed to a thickness of 20 μm. According to its formation, 2.4.7-) Add 114 volumes of linitrofluorenone to 1,4-dioxane.
Container, and polyester resin (Refsan-LS2-1
1) was added, and ultrasonic dispersion was performed for 40 minutes. The solution thus obtained was applied using a bar coater and then
Hot air drying was performed at 0°C.
その後、上記有機半導体層(4)の上にポリエステル樹
脂を約15μ−の厚みで塗布形成し、透明絶縁体層(5
)とした。Thereafter, a polyester resin is coated on the organic semiconductor layer (4) to a thickness of about 15 μm, and a transparent insulating layer (5
).
かくして逆転電界法における明部電位が正帯電型のX線
電子写真用感光体を作製した。In this way, an X-ray electrophotographic photoreceptor in which the bright area potential in the reverse electric field method was positively charged was fabricated.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、正帯電
型感光体を作製した。In addition, as a comparative example, a positively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example and using the same layer structure as that of this example.
比較例の感光体にカールソン法に基づいて+6kVのコ
ロナ帯電を行ったところ、+ 600Vの帯電を示した
0次にその感光体に100kVp、20a+^のX線を
約1秒間照射し、その表面電位を測定したところ、+6
0Vに低下し、約540Vのコントラスト電位(明部と
暗部の表面電位差)が得られた。When the photoconductor of the comparative example was corona charged to +6kV based on the Carlson method, it showed a charge of +600V.Next, the photoconductor was irradiated with X-rays of 100kVp and 20a+^ for about 1 second, and its surface was When I measured the potential, it was +6
The contrast potential decreased to 0V, and a contrast potential (surface potential difference between bright and dark areas) of about 540V was obtained.
次に本例の感光体を逆転電界法により帯電と感度を測定
した。尚、この場合、表面電位は比較例に比べて逆極性
になる。Next, the charging and sensitivity of the photoreceptor of this example were measured by a reverse electric field method. In this case, the surface potential has a reverse polarity compared to the comparative example.
即ち、感光体の全面に白色光を露光しながら6kVの電
圧を印加したコロナ帯電器により帯電を行ったところ、
約−930vの帯電を示し、これに+6kV(7):!
t)+帯電を行いながら、100kV 、2On+A(
7)X線の照射を約1秒間行い、続けて感光体の全面に
白色光の露光を行って表面電位を測定したところ、暗部
(ロ)で−450V 、明部(イ) ’T:+T50V
トなり、約1200Vのコントラスト電位が得られた。That is, when charging was performed using a corona charger that applied a voltage of 6 kV while exposing the entire surface of the photoreceptor to white light,
It shows a charge of about -930v, and +6kV (7):!
t) + charging, 100 kV, 2 On + A (
7) X-ray irradiation was performed for about 1 second, and then the entire surface of the photoreceptor was exposed to white light to measure the surface potential. The result was -450V in the dark area (B) and -450V in the bright area (A) 'T: +T50V
A contrast potential of about 1200V was obtained.
また、比較例と同様の約540νのコントラスト電位は
約0.5秒のX線の照射で得られた。Further, a contrast potential of about 540 ν similar to that of the comparative example was obtained by irradiating X-rays for about 0.5 seconds.
以上の結果より明らかな通り、本例の感光体は比較例に
比べてほぼ同等の帯電並びにX線照射条件により更に高
いコントラストが得られ、一方、より少ないX線量で同
程度のコントラスト電位が得られた。As is clear from the above results, compared to the comparative example, the photoreceptor of this example can obtain even higher contrast under almost the same charging and X-ray irradiation conditions, and on the other hand, can obtain the same contrast potential with a smaller amount of X-rays. It was done.
また本例の感光体を複写機に搭載して画像の評価を行っ
たところ、画像濃度及び解像力ともに良好な高品質の電
子写真画像が得られた。Furthermore, when the photoreceptor of this example was installed in a copying machine and images were evaluated, high-quality electrophotographic images with good image density and resolution were obtained.
(例2)
Al製導電性基板の上に厚み3μmのZnS層を形成し
、次に第2表に示す成膜条件によってB元素を1100
pp含有するa−5iC層/ a −S i層から成る
超格子構造の無機半導体層を厚み1μmで積層した。(Example 2) A ZnS layer with a thickness of 3 μm was formed on an Al conductive substrate, and then 1100% of B element was added under the film forming conditions shown in Table 2.
Inorganic semiconductor layers having a superlattice structure consisting of a pp-containing a-5iC layer/a-Si layer were laminated to a thickness of 1 μm.
尚、このB含有量並びに後述するB−P含有量はいずれ
も二次イオン質量分析計により測定した。Note that this B content and the B-P content described below were both measured using a secondary ion mass spectrometer.
然る後、有機半導体@ (4)を厚み20μmで形成し
た。その形成によれば、ヒドラゾンを1.4−ジオキサ
ンの溶剤に入れて溶かし、更にポリエステル樹脂(レフ
サン−LS2−11)をヒドラゾンと同重量加え、超音
波分散を40分間行い、そして、バー・コーターを用い
て塗布し、次いで熱風乾燥を行った。After that, an organic semiconductor @ (4) was formed to a thickness of 20 μm. According to its formation, hydrazone was dissolved in 1,4-dioxane solvent, and polyester resin (Refsan-LS2-11) was added in the same weight as hydrazone, ultrasonic dispersion was performed for 40 minutes, and then a bar coater was used. The coating was applied using a vacuum cleaner and then dried with hot air.
更に上記有機半導体層(4)の上にポリエステル樹脂を
約15μmの厚みで塗布形成し、透明絶縁層(5)とし
た。Further, a polyester resin was coated to a thickness of about 15 μm on the organic semiconductor layer (4) to form a transparent insulating layer (5).
かくして逆転電界法における明部電位が負帯電型のX線
電子写真用感光体を作成した。In this way, an X-ray electrophotographic photoreceptor with a negatively charged bright area potential in the reverse electric field method was produced.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、負帯電
型感光体を作成した。Further, as a comparative example, a negatively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example, but using the same layer structure as that of this example.
この比較例の感光体にカールソン法に基づいて6kVの
コロナ帯電を行ったところ、−630νの帯電を示した
。次にその感光体に一100kVp、20mAのX線を
約1秒間照射し、その表面電位を測定したところ、−6
0Vに低下し、約570vのコントラスト電位が得られ
た。When the photoreceptor of this comparative example was corona charged at 6 kV based on the Carlson method, it showed a charge of -630 ν. Next, the photoreceptor was irradiated with X-rays of -100 kVp and 20 mA for about 1 second, and its surface potential was measured, and it was found to be -6
The voltage decreased to 0V, and a contrast potential of about 570V was obtained.
次に本例の感光体の全面に白色光を露光しながら+6k
Vの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、+ 920Vの帯電を示した。これに−6kV(
7)コoす帯電を行いながら100kVP、20mAの
X線を約1秒間照射し、続けて感光体の全面に白色光の
露光を行って表面電位を測定したところ、暗部(ロ)で
+430V、明部(イ)で−770vとなり、1200
Vのコントラスト電位が得られた。また比較例と同様の
570vのコントラスト電位は約0.5秒のX線照射に
より得られた。Next, while exposing the entire surface of the photoreceptor in this example to white light,
When charging was performed using a corona charger applying a voltage of V, it showed a charge of +920V. -6kV (
7) We irradiated X-rays at 100 kVP and 20 mA for about 1 second while performing co-charging, and then exposed the entire surface of the photoreceptor to white light to measure the surface potential. The result was +430 V in the dark area (b). It becomes -770v in light part (a), and it is 1200v.
A contrast potential of V was obtained. Further, a contrast potential of 570 V similar to that of the comparative example was obtained by approximately 0.5 seconds of X-ray irradiation.
以上の通り、本例の感光体は比較例に比べてほぼ同等の
帯電並びにXvA照射条件により高いコントラスト電位
が得られ、また、少ないX線量で同等のコントラスト電
位が得られた。As described above, compared to the comparative example, the photoreceptor of this example obtained a high contrast potential under substantially the same charging and XvA irradiation conditions, and also obtained the same contrast potential with a smaller amount of X-rays.
そして(例1)と同様に画像濃度及び解像力とともに良
好な高品質の電子写真感光体が得られた。Similarly to (Example 1), a high quality electrophotographic photoreceptor with good image density and resolution was obtained.
(例3) 本例においては第2図の態様の感光体を作製した。(Example 3) In this example, a photoreceptor having the embodiment shown in FIG. 2 was produced.
先ず透明なソーダガラス基板(6)の上に(例1)と同
様にZnSから成るX線螢光体層(2)を厚み3μ−で
形成した。但し、核層(2)にはA1元素を添加せず、
β−ジケトネイト化合物Cu (C,H,0□)2を用
いてCu元素を適量添加した。First, an X-ray phosphor layer (2) made of ZnS was formed to a thickness of 3 .mu.m on a transparent soda glass substrate (6) in the same manner as in Example 1. However, the A1 element was not added to the nuclear layer (2),
An appropriate amount of Cu element was added using the β-diketonate compound Cu (C, H, 0□)2.
次いで透明導電層(7)としてITO膜を電子ビーム蒸
着法により1000人の厚みで形成した。Next, an ITO film was formed as a transparent conductive layer (7) to a thickness of 1000 nm by electron beam evaporation.
更に上記層(7)の上に第3表の成膜条件に基づき、a
−5iC層/a−SiN層から成る超格子構造の無機半
導体層(3)を厚み1μ−で形成した。Further, on the above layer (7), based on the film forming conditions in Table 3, a
An inorganic semiconductor layer (3) having a superlattice structure consisting of -5iC layer/a-SiN layer was formed to have a thickness of 1μ.
然る後、(例1)と同じ組成の有機半導体層(4)及び
透明絶縁層(5)をそれぞれ20μm及び15μmの厚
みで形成し、かくして逆転電界法における明部電位が正
帯電型のX線電子写真用感光体を作製した。After that, an organic semiconductor layer (4) and a transparent insulating layer (5) having the same composition as in (Example 1) were formed with a thickness of 20 μm and 15 μm, respectively, so that the bright area potential in the reverse electric field method became positively charged type X. A photoreceptor for line electrophotography was produced.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、正帯電
型感光体を作成した。Further, as a comparative example, a positively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example, but using the same layer structure as that of this example.
この比較例の感光体にカールソン法に基づいて+ 6k
Vのコロナ帯電を行ったところ、+ 660Vの帯電を
示した。次に、その感光体に100kVp、 20mA
のX線を約1時間照射し、その表面電位を測定したとこ
ろ、+60Vに低下し、約600vのコントラスト電位
が得られた。+6k on the photoreceptor of this comparative example based on the Carlson method.
When corona charging of V was performed, it showed a charge of +660V. Next, apply 100kVp and 20mA to the photoreceptor.
When X-rays were irradiated for about 1 hour and the surface potential was measured, it decreased to +60V, and a contrast potential of about 600V was obtained.
次に本例の感光体の全面に白色光を露光しながら−6に
νの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、−980Vの帯電を示した。これに+6kVのコ
ロナ帯電を行いながら100kVp、 20mAのXv
Aを約1秒間照射し、続けて感光体の全面に白色光の露
光を行って表面電位を測定したところ、暗部(ロ)で−
500v、明部(イ)で+780vとなり、1280V
のコントラスト電位が得られた。また比較例と同様の6
00■のコントラスト電位は約0.5秒のX線照射によ
り得られた。Next, the entire surface of the photoreceptor of this example was charged with a corona charger applying a voltage of -6 to ν while exposing the entire surface to white light, and a charge of -980V was obtained. While applying +6kV corona charging to this, 100kVp, 20mA Xv
A was irradiated for about 1 second, and then the entire surface of the photoreceptor was exposed to white light to measure the surface potential.
500v, +780v in the light part (A), 1280V
A contrast potential of In addition, the same 6
A contrast potential of 00■ was obtained by approximately 0.5 seconds of X-ray irradiation.
以上の通り、本例の感光体は比較例に比べてほぼ同等の
帯電並びにX線照射条件により高いコントラスト電位が
得られ、また、少ないX線量で同等のコントラスト電位
が得られた。As described above, compared to the comparative example, the photoreceptor of this example obtained a higher contrast potential under substantially the same charging and X-ray irradiation conditions, and also obtained the same contrast potential with a smaller amount of X-rays.
そして(例1)と同様に画像濃度及び解像力とともに良
好な高品質の電子写真感光体が得られた。Similarly to (Example 1), a high quality electrophotographic photoreceptor with good image density and resolution was obtained.
(例4) 本例においては第3回の態様の感光体を作製した。(Example 4) In this example, a photoreceptor of the third embodiment was produced.
先ず、透明なソーダガラス基板(8)の一方の主面上に
透明導電層であるITO膜を電子ビーム1着法により1
000人の厚みで形成し、他方の主面上に(例1)と同
様にZnSから成るX線螢光体層(2)を3μ麹の厚み
で形成した。但し、核層(2)には^1元素を添加せず
、Cu元素のみを適量添加した。First, an ITO film, which is a transparent conductive layer, is deposited on one main surface of a transparent soda glass substrate (8) by an electron beam one-layer method.
On the other main surface, an X-ray phosphor layer (2) made of ZnS was formed to a thickness of 3 μm in the same manner as in Example 1. However, the ^1 element was not added to the core layer (2), and only an appropriate amount of the Cu element was added.
次に上記ITO膜の上に(例2)と同じ無機半導体層(
3)をRFプラズマCVD法により形成した。Next, on top of the above ITO film is the same inorganic semiconductor layer as (Example 2) (
3) was formed by RF plasma CVD method.
然る後、(例1)と同じ組成の有機半導体層(4)及び
透明絶縁層(5)をそれぞれ20μI及び15μmの厚
みで形成し、かくして逆転電界法における明部電位が負
帯電型のXvA電子写真用感光体を作製した。After that, an organic semiconductor layer (4) and a transparent insulating layer (5) having the same composition as in (Example 1) are formed with a thickness of 20 μI and 15 μm, respectively, so that the bright area potential in the reverse electric field method becomes negatively charged type XvA. A photoreceptor for electrophotography was produced.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、負帯電
型感光体を作製した。In addition, as a comparative example, a negatively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example, but with the other layer configurations being exactly the same as in this example.
この比較例の感光体にカールソン法に基づいて6kVの
コロナ帯電を行ったところ、−650Vの帯電を示した
。次にその感光体に10kVp 、 20mAのX線を
約1秒間照射し、その表面電位を測定したところ、−7
0Vに低下し、約580Vのコントラスト電位が得られ
た。When the photoreceptor of this comparative example was corona charged at 6 kV based on the Carlson method, it showed a charge of -650 V. Next, the photoreceptor was irradiated with X-rays of 10 kVp and 20 mA for about 1 second, and its surface potential was measured, and it was found to be -7
The voltage decreased to 0V, and a contrast potential of about 580V was obtained.
次に本例の感光体の全面に白色光を露光しながら+6k
Vの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、+ 930Vの帯電を示した。これニー6kV(
7):10す帯電を行いながら100kVP、 20m
AのX線を約1秒間照射し、続けて感光体の全面に白色
光の露光を行って表面電位を測定したところ、暗部(ロ
)で+450V、明部(イ) チー760Vとなり、1
210Vのコントラスト電位が得られた。また比較例と
同様の570vのコントラスト電位は約0.5秒のX線
照射により得られた。Next, while exposing the entire surface of the photoreceptor in this example to white light,
When charging was performed using a corona charger applying a voltage of V, it showed a charge of +930V. This knee 6kV (
7): 100kVP, 20m while performing 10S charging
When the surface potential was measured by irradiating the X-ray A for about 1 second and then exposing the entire surface of the photoreceptor to white light, it was +450V in the dark area (B) and 760V in the bright area (A), 1
A contrast potential of 210V was obtained. Further, a contrast potential of 570 V similar to that of the comparative example was obtained by approximately 0.5 seconds of X-ray irradiation.
以上の通り、本例の感光体は比較例に比べてほぼ同等の
帯電並びにX線照射条件により高いコントラスト電位が
得られ、また、少ないX線量で同等のコントラスト電位
が得られた。As described above, compared to the comparative example, the photoreceptor of this example obtained a higher contrast potential under substantially the same charging and X-ray irradiation conditions, and also obtained the same contrast potential with a smaller amount of X-rays.
そして(例1)と同様に画像濃度及び解像力とともに良
好な高品質の電子写真感光体が得られた。Similarly to (Example 1), a high quality electrophotographic photoreceptor with good image density and resolution was obtained.
(例5)
へ2基板上にx′m螢光体層としてZnS層を、光キヤ
リア励起層としてa−SiC層をそれぞれ100人の厚
みで交互に積層し、厚み1μ端の無機半導体層を形成し
た。(Example 5) A ZnS layer as an x'm phosphor layer and an a-SiC layer as a photocarrier excitation layer are alternately laminated on two substrates to a thickness of 100 μm each, and an inorganic semiconductor layer with a thickness of 1 μm is formed. Formed.
ZnS層用原料ガスにはジメチル亜鉛Zn (CH3)
zと硫化水素Hasを用いて、それにβ−ジケトネイ
ト化合物Cu(C5H,0□)2及びトリエチルアルミ
ニウムA 1 (C2)1.t)3を加え、銅(Cu)
とアルミニウム(AI)を適当量含有するZnS層を形
成した。Dimethylzinc Zn (CH3) is used as the raw material gas for the ZnS layer.
z and hydrogen sulfide Has, and the β-diketonate compound Cu(C5H,0□)2 and triethylaluminum A1(C2)1. t) Add 3 and add copper (Cu)
A ZnS layer containing an appropriate amount of aluminum (AI) and aluminum (AI) was formed.
また、a−SiC層用原料ガスとして5IFI4. C
2H4及びH2の各々のガスを用いた。In addition, 5IFI4. C
2H4 and H2 gases were used.
上記2層を交互に積層する場合、どちらもグロー放電プ
ラズマCVD装置を用いて、原料ガス導入の切り替え並
びに印加する高周波電力の0N−OFFにより行う。When the two layers are alternately laminated, both are performed using a glow discharge plasma CVD apparatus by switching the introduction of the raw material gas and turning the applied high-frequency power ON and OFF.
次に有機半導体層を(例1)と同様に厚み20μmで形
成する。Next, an organic semiconductor layer is formed to a thickness of 20 μm in the same manner as in (Example 1).
その後、上記有機半導体層の上にポリエステル樹脂を約
15μmの厚みで塗布形成し、透明絶縁体層とした。Thereafter, a polyester resin was coated to a thickness of about 15 μm on the organic semiconductor layer to form a transparent insulating layer.
かくして逆転電界法における明部電位が正帯電型のX線
電子写真用感光体を作製した。In this way, an X-ray electrophotographic photoreceptor in which the bright area potential in the reverse electric field method was positively charged was fabricated.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、正帯電
型感光体を作製した。In addition, as a comparative example, a positively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example and using the same layer structure as that of this example.
比較例の感光体にカールソン法に基づいて+6kVのコ
ロナ帯電を行ったところ、+ 700Vの帯電を示した
。次にその感光体に100kVp、2001AOX線を
約1秒間照射し、その表面電位を測定したところ、+7
0Vに低下し、約630vのコントラスト電位が得られ
た。When the photoreceptor of the comparative example was corona charged to +6 kV based on the Carlson method, it showed a charge of +700 V. Next, the photoreceptor was irradiated with 2001AOX rays at 100kVp for about 1 second, and its surface potential was measured and found to be +7
The voltage decreased to 0V, and a contrast potential of about 630V was obtained.
次に本例の感光体の全面に白色光を露光しながら一6k
Vの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、約−1100Vの帯電を示し、これに+6kVの
コロナ帯電を行いながら、100kv、20mAのX線
の照射を約1秒間行い、続けて感光体の全面に白色光の
露光を行って表面電位を測定したところ、暗部(ロ)で
−600V、明部(イ)で+800vとなり、約140
0νのコントラスト電位が得られた。また、比較例と同
様の約630vのコントラスト電位は約0.5秒のX線
の照射で得られた。Next, while exposing the entire surface of the photoreceptor in this example to white light,
When charging was performed using a corona charger applying a voltage of V, it showed a charge of about -1100V, and while applying +6kV corona charging, it was irradiated with X-rays at 100kV and 20mA for about 1 second, and then When the entire surface of the photoreceptor was exposed to white light and the surface potential was measured, it was -600V in the dark area (B) and +800V in the bright area (A), about 140V.
A contrast potential of 0v was obtained. Further, a contrast potential of about 630 V, similar to that of the comparative example, was obtained by irradiating X-rays for about 0.5 seconds.
以上の結果より明らかな通り、本例の感光体は比較例に
比べてほぼ同等の帯電並びにX線照射条件により更に高
いコントラストが得られ、一方、より少ないX線量で同
程度のコントラスト電位が得られた。As is clear from the above results, compared to the comparative example, the photoreceptor of this example can obtain even higher contrast under almost the same charging and X-ray irradiation conditions, and on the other hand, can obtain the same contrast potential with a smaller amount of X-rays. It was done.
また本例の感光体を複写機に搭載して画像の評価を行っ
たところ、画像濃度及び解像力ともに良好な高品質の電
子写真画像が得られた。Furthermore, when the photoreceptor of this example was installed in a copying machine and images were evaluated, high-quality electrophotographic images with good image density and resolution were obtained.
(例6)
本例においては、(例5)の感光体を作製するに当たり
、a−SiC層用原料ガスにB2H&ガスを加え、これ
によってB含有量が(Si+C)両元素に対して200
ppmになるようなa−SiC層を形成し、しかも、厚
み20μmの有機半導体層を(例2)と同様に形成し、
それ以外は(例5)と同じ層構成に設定した。(Example 6) In this example, when producing the photoreceptor of (Example 5), B2H & gas was added to the raw material gas for the a-SiC layer, so that the B content was 200% for both elements (Si + C).
ppm, and an organic semiconductor layer with a thickness of 20 μm was formed in the same manner as in (Example 2),
Other than that, the layer configuration was the same as in (Example 5).
かくして逆転電界法における明部電位が負帯電型のX線
電子写真用感光体を作成した。In this way, an X-ray electrophotographic photoreceptor with a negatively charged bright area potential in the reverse electric field method was produced.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、負帯電
型感光体を作成した。Further, as a comparative example, a negatively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example, but using the same layer structure as that of this example.
この比較例の感光体にカールソン法に基づいて−6にν
のコロナ帯電を行ったところ、−650Vの帯電を示し
た0次にその感光体に一100kVp、20mAのX線
を約1秒間照射し、その表面電位を測定したところ、−
50Vに低下し、約600vのコントラスト電位が得ら
れた。Based on the Carlson method, the photoreceptor of this comparative example had a value of -6.
When corona charging was carried out, the photoreceptor showed a charge of -650 V. When the photoreceptor was irradiated with X-rays of -100 kVp and 20 mA for about 1 second and its surface potential was measured, -
The voltage was reduced to 50V, and a contrast potential of approximately 600V was obtained.
次に本例の感光体の全面に白色光を露光しながら+6k
Vの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、+ 105Vの帯電を示した。これニー6kVの
コロナ帯電を行いながら100kVP、20mAのX線
を約1秒間照射し、続けて感光体の全面に白色光の露光
を行って表面電位を測定したところ、暗部(Tel)
テ+570V、明部(イ) チー780Vとなり、13
50Vのコントラスト電位が得られた。また比較例と同
様の600Vのコントラスト電位は約0.5秒のX線照
射により得られた。Next, while exposing the entire surface of the photoreceptor in this example to white light,
When charging was performed using a corona charger applying a voltage of V, it showed a charge of +105V. This was irradiated with X-rays of 100 kVP and 20 mA for about 1 second while performing corona charging at knee 6 kV, and then the entire surface of the photoreceptor was exposed to white light to measure the surface potential.
Te +570V, light part (I) Chi becomes 780V, 13
A contrast potential of 50V was obtained. Further, a contrast potential of 600 V similar to that of the comparative example was obtained by irradiating X-rays for about 0.5 seconds.
以上の通り、本例の感光体は比較例に比べてほぼ同等の
帯電並びにX線照射条件により高いコントラスト電位が
得られ、また、少ないxvAIで同等のコントラスト電
位が得られた。As described above, compared to the comparative example, the photoreceptor of this example obtained a higher contrast potential under substantially the same charging and X-ray irradiation conditions, and also obtained the same contrast potential with less xvAI.
そして画像濃度及び解像力とともに良好な高品質の電子
写真感光体が得られた。A high-quality electrophotographic photoreceptor with good image density and resolution was obtained.
(例7)
本例においては、(例5)の感光体を作製するに当たり
、a−SiC層用原料ガスにPE1.ガスを加え、これ
によってP含有量が(Si+C)両元素に対して110
0ppの含有になるようなa−SiC層を形成し、それ
以外は(例5)と同じ層構成に設定した。(Example 7) In this example, when producing the photoreceptor of (Example 5), PE1. gas is added, which increases the P content to 110 for both elements (Si+C).
An a-SiC layer containing 0 pp was formed, and the other layer configurations were the same as in Example 5.
かくして逆転電界法における明部電位が正帯電型のX線
電子写真用感光体を作製した。In this way, an X-ray electrophotographic photoreceptor in which the bright area potential in the reverse electric field method was positively charged was fabricated.
また比較例として本例の感光体に対して透明絶縁層を形
成せず、その他の層構成を本例と全く同一にし、正帯電
型感光体を作製した。In addition, as a comparative example, a positively charged photoreceptor was prepared by not forming a transparent insulating layer on the photoreceptor of this example and using the same layer structure as that of this example.
比較例の感光体にカールソン法に基づいて+6kVのコ
ロナ帯電を行ったところ、+ 670Vの帯電を示した
。次にその感光体ニ100kVp、20mA(7)Xi
を約1秒間照射し、その表面電位を測定したところ、+
30Vに低下し、約640vのコントラスト電位が得ら
れた。When the photoreceptor of the comparative example was corona charged to +6 kV based on the Carlson method, it showed a charge of +670V. Next, the photoreceptor is 100kVp, 20mA (7) Xi
was irradiated for about 1 second and the surface potential was measured, +
30V, and a contrast potential of about 640V was obtained.
次に本例の感光体の全面に白色光を露光しながら一6k
Vの電圧を印加したコロナ帯電器により帯電を行ったと
ころ、約−1080Vの帯電を示し、これに+6kVの
コロナ帯電を行いながら、100kV 。Next, while exposing the entire surface of the photoreceptor in this example to white light,
When charging was performed using a corona charger applying a voltage of V, it showed a charge of about -1080V, and while corona charging of +6kV was applied to this, the charge was increased to 100kV.
20mAのX線の照射を約1秒間行い、続けて感光体の
全面の白色光の露光を行って表面電位を測定したところ
、暗部(ロ)で−580V、明部(イ)で+850vと
なり、約1430Vのコントラスト電位が得られた。ま
た、比較例と同様の約640vのコントラスト電位は約
0.5秒のX線の照射で得られた。Irradiation with 20mA X-rays was performed for about 1 second, followed by exposure of the entire surface of the photoreceptor to white light, and the surface potential was measured; it was -580V in the dark area (B) and +850V in the bright area (A). A contrast potential of about 1430V was obtained. Further, a contrast potential of about 640 V, similar to that of the comparative example, was obtained by irradiating X-rays for about 0.5 seconds.
以上の結果より明らかな通り、本例の感光体は比較例に
比べてほぼ同等の帯電並びにX線照射条件により更に高
いコントラストが得られ、一方、より少ないX線量で同
程度のコントラスト電位が得られた。As is clear from the above results, compared to the comparative example, the photoreceptor of this example can obtain even higher contrast under almost the same charging and X-ray irradiation conditions, and on the other hand, can obtain the same contrast potential with a smaller amount of X-rays. It was done.
また本例の感光体を複写機に搭載して画像の評価を行っ
たところ、画像濃度及び解像力ともに良好な高品質の電
子写真画像が得られた。Furthermore, when the photoreceptor of this example was installed in a copying machine and images were evaluated, high-quality electrophotographic images with good image density and resolution were obtained.
以上の通り、本発明のX線電子写真用感光体によれば、
従来のSe層に比べて短波長側の可視光に対して高怒度
な無機半導体層を用いており、これによってX線に対し
て高い感度が得られ、しかも、逆転電界法を用いて電荷
潜像のコントラストを高めることができた。As described above, according to the X-ray electrophotographic photoreceptor of the present invention,
We use an inorganic semiconductor layer that is more sensitive to visible light at shorter wavelengths than the conventional Se layer, which allows us to obtain high sensitivity to X-rays. It was possible to increase the contrast of the latent image.
第1図〜第4図はいずれも本発明X1lii!子写真用
感光体の層構成を表す断面図である。また、第5図(A
) (B) (C) (D) (E)は逆転電界法のプ
ロセスを表す工程図であり、第6図はグロー放電分解装
置の概略図である。
X線螢光体層
・・無機半導体層
有機半導体層
透明導電層1 to 4 are all of the present invention X1lii! FIG. 2 is a cross-sectional view showing the layer structure of a photoreceptor for secondary photography. In addition, Fig. 5 (A
) (B) (C) (D) (E) are process diagrams showing the process of the reverse electric field method, and FIG. 6 is a schematic diagram of the glow discharge decomposition apparatus. X-ray phosphor layer...Inorganic semiconductor layer Organic semiconductor layer Transparent conductive layer
Claims (4)
Si_1_−_XC_XのX値が0<X<0.5で表さ
れるアモルファスシリコンカーバイド層が相互に光学的
バンドギャップが異なるように積層し且つ各層の厚みが
20〜500Åである無機半導体層並びに有機半導体層
を導電性基板上に順次積層するとともに、上記有機半導
体層の上に透明絶縁層を積層したことを特徴とするX線
電子写真用感光体。(1) An X-ray phosphor layer, an amorphous silicon layer, and an amorphous silicon carbide layer whose compositional formula Si_1_-_XC_X has an X value of 0<X<0.5 are stacked so that their optical band gaps differ from each other. An X-ray electrophotography characterized in that an inorganic semiconductor layer and an organic semiconductor layer each having a thickness of 20 to 500 Å are sequentially laminated on a conductive substrate, and a transparent insulating layer is laminated on the organic semiconductor layer. Photoreceptor for use.
ン層と組成式Si_1_−_XC_XのX値が0<X<
0.5で表されるアモルファスシリコンカーバイド層が
相互に光学的バンドギャップが異なるように積層し且つ
各層の厚みが20〜500Åである無機半導体層並びに
有機半導体層を基板上に順次積層するとともに、上記有
機半導体層の上に透明絶縁層を積層したことを特徴とす
るX線電子写真用感光体。(2) The X value of the X-ray phosphor layer, transparent conductive layer, amorphous silicon layer and compositional formula Si_1_-_XC_X is 0<X<
Amorphous silicon carbide layers represented by 0.5 are laminated so that their optical band gaps differ from each other, and an inorganic semiconductor layer and an organic semiconductor layer each having a thickness of 20 to 500 Å are sequentially laminated on a substrate, A photoreceptor for X-ray electrophotography, characterized in that a transparent insulating layer is laminated on the organic semiconductor layer.
つ少なくとも他主面が導電性を有するとともに該導電性
主面上にアモルファスシリコン層と組成式Si_1_−
_XC_XのX値が0<X<0.5で表されるアモルフ
ァスシリコンカーバイド層が相互に光学的バンドギャッ
プが異なるように積層し且つ各層の厚みが20〜500
Åである無機半導体層並びに有機半導体層を順次積層す
るとともに、上記有機半導体層の上に透明絶縁層を積層
したことを特徴とするX線電子写真用感光体。(3) An X-ray phosphor layer is formed on one main surface of a transparent substrate, and at least the other main surface is electrically conductive, and an amorphous silicon layer and a composition formula Si_1_- are formed on the electrically conductive main surface.
Amorphous silicon carbide layers with an X value of _XC_X of 0<X<0.5 are stacked so that their optical band gaps are different from each other, and each layer has a thickness of 20 to 500 mm.
1. A photoreceptor for X-ray electrophotography, characterized in that an inorganic semiconductor layer and an organic semiconductor layer are sequentially laminated, and a transparent insulating layer is laminated on the organic semiconductor layer.
X値が0<X<0.5で表されるアモルファスシリコン
カーバイド層を積層し且つ各層の厚みが50〜2000
Åである無機半導体層並びに有機半導体層を導電性基板
上に順次積層するとともに、上記有機半導体層の上に透
明絶縁層を積層したことを特徴とするX線電子写真用感
光体。(4) An X-ray phosphor layer and an amorphous silicon carbide layer whose compositional formula Si_1_-_XC_X has an X value of 0<X<0.5 are laminated, and each layer has a thickness of 50 to 2000.
1. A photoreceptor for X-ray electrophotography, characterized in that an inorganic semiconductor layer and an organic semiconductor layer of .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2654490A JPH03231253A (en) | 1990-02-06 | 1990-02-06 | X-ray electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2654490A JPH03231253A (en) | 1990-02-06 | 1990-02-06 | X-ray electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03231253A true JPH03231253A (en) | 1991-10-15 |
Family
ID=12196450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2654490A Pending JPH03231253A (en) | 1990-02-06 | 1990-02-06 | X-ray electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03231253A (en) |
-
1990
- 1990-02-06 JP JP2654490A patent/JPH03231253A/en active Pending
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