JPH03227575A - 光電変換装置 - Google Patents
光電変換装置Info
- Publication number
- JPH03227575A JPH03227575A JP2245100A JP24510090A JPH03227575A JP H03227575 A JPH03227575 A JP H03227575A JP 2245100 A JP2245100 A JP 2245100A JP 24510090 A JP24510090 A JP 24510090A JP H03227575 A JPH03227575 A JP H03227575A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- conversion device
- energy
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 40
- 239000012535 impurity Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2245100A JPH03227575A (ja) | 1990-09-14 | 1990-09-14 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2245100A JPH03227575A (ja) | 1990-09-14 | 1990-09-14 | 光電変換装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56045888A Division JPS57160175A (en) | 1981-03-28 | 1981-03-28 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03227575A true JPH03227575A (ja) | 1991-10-08 |
| JPH0558271B2 JPH0558271B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-26 |
Family
ID=17128614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2245100A Granted JPH03227575A (ja) | 1990-09-14 | 1990-09-14 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03227575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5511329A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device |
| JPS5544793A (en) * | 1978-09-25 | 1980-03-29 | Rca Corp | Amorphous silicon solar battery |
| JPS55139370A (en) * | 1979-04-13 | 1980-10-31 | Paamakemu Asia:Kk | Preparation of 1,4-di-substituted piperazine |
| JPS5623784A (en) * | 1979-08-05 | 1981-03-06 | Shunpei Yamazaki | Manufacture of semiconductor device |
-
1990
- 1990-09-14 JP JP2245100A patent/JPH03227575A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5511329A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device |
| JPS5544793A (en) * | 1978-09-25 | 1980-03-29 | Rca Corp | Amorphous silicon solar battery |
| JPS55139370A (en) * | 1979-04-13 | 1980-10-31 | Paamakemu Asia:Kk | Preparation of 1,4-di-substituted piperazine |
| JPS5623784A (en) * | 1979-08-05 | 1981-03-06 | Shunpei Yamazaki | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558271B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-26 |
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