JPH03219069A - Method for cleaning vacuum vessel - Google Patents

Method for cleaning vacuum vessel

Info

Publication number
JPH03219069A
JPH03219069A JP1394690A JP1394690A JPH03219069A JP H03219069 A JPH03219069 A JP H03219069A JP 1394690 A JP1394690 A JP 1394690A JP 1394690 A JP1394690 A JP 1394690A JP H03219069 A JPH03219069 A JP H03219069A
Authority
JP
Japan
Prior art keywords
vessel
dust
gas
pressure
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1394690A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Shirosaka
欣幸 城阪
Takanori Tamura
田村 孝憲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Corp
Priority to JP1394690A priority Critical patent/JPH03219069A/en
Publication of JPH03219069A publication Critical patent/JPH03219069A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To clean a vessel by removing dust, etc., in the vessel by forcedly exhausting gas in the vessel while introducing the clean gas in the vacuum vessel. CONSTITUTION:At the time of introducing the gas into the vessel in order to return the pressure of vacuum vessel to the pressure of atmosphere, the dust stuck to wall surface, etc., in the vessel is blown up. The clean gas is introduced in the vessel while forcedly and quickly exhausting the gas in the vessel whose pressure is returned back to the atmospheric pressure and the dust is sucked and removed while holding the reduced pressure condition of the vessel. By this method, even if a detector for measuring the dust is inserted from window during cleaning, the dust is not blown out and the substrate, etc., prepared outside of the vessel is not contaminated. By cleaning the substrate introducing vessel, etc., in sputtering apparatus with this method, the operation of apparatus can be accelerated.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は真空槽のクリーニング方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for cleaning a vacuum chamber.

詳しくは、スパッタリング、真空蒸着等の真空槽(減圧
槽)内で薄膜を形成する装置において、真空槽内のダス
ト等を除去して槽内を清浄化するクリーニング方法に関
する。
Specifically, the present invention relates to a cleaning method for cleaning the inside of a vacuum chamber (reduced pressure chamber) by removing dust and the like in an apparatus for forming a thin film in a vacuum chamber (reduced pressure chamber) using sputtering, vacuum evaporation, or the like.

〔従来の技術及びその課題〕[Conventional technology and its problems]

真空中にて薄膜を形成する技術は、例えばスパッタリン
グ、真空蒸着、イオンブレーティング、化学蒸着等種々
の方法が知られている。この種の技術は精密物品の製造
に適用されることが多く極めて精度の高い薄膜が要求さ
れる。従って真空槽内に微量のダスト等が残留していて
も製品不良の大きな問題となる。このためこの種の真空
槽内のクリーニングを迅速かつ完全に行なう方法の開発
が望まれていた。クリーニング方法の一つとして例えば
特開昭62−196367号に開示されているようなり
リーンエアーをブロアで供給し、排気系へ押し出す方法
も考えられている。しかしこの方法では、たとえばクリ
ーニング中にダストの有無を検知装置を差し込んで確認
するため、確認窓を開けた時に、内圧が高いために槽内
の気体が外に吹き出し、同伴されたダストが周囲に敗っ
て汚染する等の問題があった。
Various methods are known as techniques for forming thin films in vacuum, such as sputtering, vacuum deposition, ion blasting, and chemical vapor deposition. This type of technology is often applied to the manufacture of precision articles, and requires thin films with extremely high precision. Therefore, even if a small amount of dust remains in the vacuum chamber, this poses a serious problem of product defects. Therefore, it has been desired to develop a method for quickly and completely cleaning the inside of this type of vacuum chamber. As one of the cleaning methods, a method has been considered in which lean air is supplied by a blower and forced out to the exhaust system, as disclosed in, for example, Japanese Patent Laid-Open No. 196367/1983. However, with this method, for example, a detection device is inserted to check for the presence of dust during cleaning, so when the confirmation window is opened, the internal pressure is high and the gas inside the tank blows out, causing the entrained dust to spread to the surroundings. There were problems such as defeat and contamination.

[課題を解決するための手段] 本発明者等は、上述したような従来の技術の課題につき
種々検討した結果、槽内を減圧状態に保ちつつ清浄気体
を流通させることにより問題を解決し得ることを見出し
、本発明を完成するに至った。
[Means for Solving the Problems] As a result of various studies on the problems of the conventional technology as described above, the present inventors have found that the problems can be solved by circulating clean gas while maintaining the inside of the tank in a reduced pressure state. This discovery led to the completion of the present invention.

すなわち、本発明の要旨は、真空槽内をクリーニングす
るにあたり、真空槽内に清浄な気体を導入しつつ槽内の
気体を強制的に吸引排気することを特徴とする真空槽の
クリーニング方法に存する。
That is, the gist of the present invention resides in a method for cleaning a vacuum chamber, which is characterized by introducing clean gas into the vacuum chamber and forcibly suctioning and exhausting the gas within the chamber. .

真空槽中でスパッタリング等により薄膜を形成するため
には、薄膜形成用基材を槽外(大気)から槽内(真空)
に導入する工程、成膜工程、薄膜形成後に槽内から取り
出す工程があり、真空槽は真空状態と常圧状態とが繰り
返される。
To form a thin film by sputtering etc. in a vacuum chamber, the substrate for thin film formation must be moved from outside the chamber (atmosphere) to inside the chamber (vacuum).
There is a step of introducing the thin film into the tank, a film forming step, and a step of removing the thin film from the tank after forming the thin film, and the vacuum tank is repeatedly placed in a vacuum state and a normal pressure state.

特に、真空状態の槽を大気圧に戻すために槽内に気体を
導入する際には槽内の壁面等に付着していたダストが舞
い上り汚染源となる。
In particular, when gas is introduced into the vacuum tank to return it to atmospheric pressure, dust adhering to the walls of the tank rises and becomes a source of contamination.

本発明の方法は、このように大気圧に戻った真空槽内の
気体をすみやかに強制排気しつつ槽内に清浄な気体を導
入し減圧状態を保ちながらダストを吸引除去するもので
ある。このようにすることによりたとえばクリーニング
中にダスト測定用の検知機を窓から差し込む等してもダ
ストが吹き出して槽外に準備した基材等を汚染するよう
なことがない。
The method of the present invention is to quickly forcibly exhaust the gas in the vacuum chamber that has returned to atmospheric pressure as described above, introduce clean gas into the chamber, and suction and remove dust while maintaining a reduced pressure state. By doing this, for example, even if a detector for measuring dust is inserted through a window during cleaning, dust will not blow out and contaminate the substrate prepared outside the tank.

〔実施例〕〔Example〕

以下に実施例を示し、本発明方法を一例をもって具体的
に説明する。
EXAMPLES The method of the present invention will be specifically explained below by way of examples.

実施例1 スパッタリング装置の基材導入部に当る200mmX 
500mmX 800mmの内部空間を有する真空槽を
一旦5 X 10−5torrまで排気し、次いで清浄
空気を導入し5秒間で大気圧まで戻したところ、導入さ
れた空気流によって層内のダストが舞い上りダストカウ
ンターによる測定ではクリーン度はクラス15000で
あった(クリーン度とはlft”当りのダスト粒子の個
数を表わす。)。
Example 1 200mmX corresponding to the base material introduction part of the sputtering device
A vacuum chamber with an internal space of 500 mm x 800 mm was once evacuated to 5 x 10-5 torr, then clean air was introduced and the pressure was returned to atmospheric pressure in 5 seconds. As measured by a counter, the cleanliness was class 15,000 (cleanliness refers to the number of dust particles per lft").

次いで、排気装置を働らかし、かつ0.03μのフィル
ターを通した清浄空気を供給したところクリーン度は速
かにクラス5まで低下した。
Next, when the exhaust system was activated and clean air passed through a 0.03μ filter was supplied, the cleanliness level quickly decreased to class 5.

排気装置を働かしたことにより層内は若干の減圧状態と
なっており、周囲の空気を吸引する状態となり槽内のダ
ストが周囲に吹き出すようなことはなかった。
By operating the exhaust system, the pressure inside the tank was slightly reduced, and the surrounding air was sucked in, so the dust in the tank was not blown out into the surrounding area.

〔発明の効果〕〔Effect of the invention〕

本発明の方法によれば真空槽内のダストを速かに排出す
ることができ、また周囲を汚染するようなこともない。
According to the method of the present invention, the dust in the vacuum chamber can be quickly discharged, and the surrounding environment is not contaminated.

従ってスパッタリング装置の基材導入槽等をこの方法で
クリーニングすることにより高速化が可能となり実用上
大変好適である。
Therefore, by cleaning the base material introduction tank of the sputtering apparatus using this method, it is possible to increase the speed, which is very suitable for practical use.

Claims (1)

【特許請求の範囲】[Claims] (1)真空槽内をクリーニングするにあたり、真空槽内
に清浄な気体を導入しつつ槽内の気体を強制的に吸引排
気することを特徴とする真空槽のクリーニング方法。
(1) A method for cleaning a vacuum chamber, which comprises introducing clean gas into the vacuum chamber and forcibly suctioning and exhausting the gas within the chamber.
JP1394690A 1990-01-24 1990-01-24 Method for cleaning vacuum vessel Pending JPH03219069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1394690A JPH03219069A (en) 1990-01-24 1990-01-24 Method for cleaning vacuum vessel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1394690A JPH03219069A (en) 1990-01-24 1990-01-24 Method for cleaning vacuum vessel

Publications (1)

Publication Number Publication Date
JPH03219069A true JPH03219069A (en) 1991-09-26

Family

ID=11847372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1394690A Pending JPH03219069A (en) 1990-01-24 1990-01-24 Method for cleaning vacuum vessel

Country Status (1)

Country Link
JP (1) JPH03219069A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067664A (en) * 1983-09-24 1985-04-18 Shimadzu Corp Dust removal of vapor deposition apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067664A (en) * 1983-09-24 1985-04-18 Shimadzu Corp Dust removal of vapor deposition apparatus

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