WO2020101793A3 - Device and method for plasma treatment of electronic materials - Google Patents

Device and method for plasma treatment of electronic materials Download PDF

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Publication number
WO2020101793A3
WO2020101793A3 PCT/US2019/049556 US2019049556W WO2020101793A3 WO 2020101793 A3 WO2020101793 A3 WO 2020101793A3 US 2019049556 W US2019049556 W US 2019049556W WO 2020101793 A3 WO2020101793 A3 WO 2020101793A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
plasma
particles
materials
thin films
Prior art date
Application number
PCT/US2019/049556
Other languages
French (fr)
Other versions
WO2020101793A2 (en
Inventor
Thomas Scott Williams
Siu Fai CHENG
Robert F. Hicks
Original Assignee
Surfx Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surfx Technologies Llc filed Critical Surfx Technologies Llc
Priority to US16/559,950 priority Critical patent/US20200152430A1/en
Priority to KR1020217009192A priority patent/KR20210056363A/en
Priority to JP2021536680A priority patent/JP2021535583A/en
Priority to CN201980057606.XA priority patent/CN112639195A/en
Priority to EP19883888.0A priority patent/EP3847301A4/en
Publication of WO2020101793A2 publication Critical patent/WO2020101793A2/en
Publication of WO2020101793A3 publication Critical patent/WO2020101793A3/en
Priority to US17/939,744 priority patent/US20230049702A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)

Abstract

Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.
PCT/US2019/049556 2018-09-04 2019-09-04 Device and method for plasma treatment of electronic materials WO2020101793A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US16/559,950 US20200152430A1 (en) 2018-09-04 2019-09-04 Device and method for plasma treatment of electronic materials
KR1020217009192A KR20210056363A (en) 2018-09-04 2019-09-04 Apparatus and method for plasma treatment of electronic materials
JP2021536680A JP2021535583A (en) 2018-09-04 2019-09-04 Equipment and methods for plasma processing of electronic materials
CN201980057606.XA CN112639195A (en) 2018-09-04 2019-09-04 Apparatus and method for plasma processing of electronic materials
EP19883888.0A EP3847301A4 (en) 2018-09-04 2019-09-04 Device and method for plasma treatment of electronic materials
US17/939,744 US20230049702A1 (en) 2018-09-04 2022-09-07 Device for plasma treatment of electronic materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862726905P 2018-09-04 2018-09-04
US62/726,905 2018-09-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/559,950 Continuation US20200152430A1 (en) 2018-09-04 2019-09-04 Device and method for plasma treatment of electronic materials

Publications (2)

Publication Number Publication Date
WO2020101793A2 WO2020101793A2 (en) 2020-05-22
WO2020101793A3 true WO2020101793A3 (en) 2020-06-25

Family

ID=70730579

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/049556 WO2020101793A2 (en) 2018-09-04 2019-09-04 Device and method for plasma treatment of electronic materials

Country Status (7)

Country Link
US (1) US20230049702A1 (en)
EP (1) EP3847301A4 (en)
JP (1) JP2021535583A (en)
KR (1) KR20210056363A (en)
CN (1) CN112639195A (en)
TW (1) TW202030768A (en)
WO (1) WO2020101793A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010006093A1 (en) * 1999-12-07 2001-07-05 Toshihiro Tabuchi Surface treatment apparatus
US20020129902A1 (en) * 1999-05-14 2002-09-19 Babayan Steven E. Low-temperature compatible wide-pressure-range plasma flow device
US8328982B1 (en) * 2005-09-16 2012-12-11 Surfx Technologies Llc Low-temperature, converging, reactive gas source and method of use
US20160008757A1 (en) * 2014-07-08 2016-01-14 Particle Measuring Systems, Inc. Active filtration system for controlling cleanroom environments
US10032609B1 (en) * 2013-12-18 2018-07-24 Surfx Technologies Llc Low temperature atmospheric pressure plasma applications

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2725129B1 (en) * 1994-09-30 1997-06-13 Oreal WATER RESISTANT ANHYDROUS COSMETIC COMPOSITION
US7510664B2 (en) * 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
JP2009127981A (en) * 2007-11-27 2009-06-11 Semiconductor Energy Lab Co Ltd Clean room, film forming method, and manufacturing method of semiconductor device
TW201202463A (en) * 2010-06-09 2012-01-16 Intevac Inc Full-enclosure, controlled-flow mini-environment for thin film chambers
US10800092B1 (en) * 2013-12-18 2020-10-13 Surfx Technologies Llc Low temperature atmospheric pressure plasma for cleaning and activating metals
US9406485B1 (en) * 2013-12-18 2016-08-02 Surfx Technologies Llc Argon and helium plasma apparatus and methods
CN105695936B (en) * 2014-11-26 2018-11-06 北京北方华创微电子装备有限公司 Pre-cleaning cavity and plasma processing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020129902A1 (en) * 1999-05-14 2002-09-19 Babayan Steven E. Low-temperature compatible wide-pressure-range plasma flow device
US20010006093A1 (en) * 1999-12-07 2001-07-05 Toshihiro Tabuchi Surface treatment apparatus
US8328982B1 (en) * 2005-09-16 2012-12-11 Surfx Technologies Llc Low-temperature, converging, reactive gas source and method of use
US10032609B1 (en) * 2013-12-18 2018-07-24 Surfx Technologies Llc Low temperature atmospheric pressure plasma applications
US20160008757A1 (en) * 2014-07-08 2016-01-14 Particle Measuring Systems, Inc. Active filtration system for controlling cleanroom environments

Also Published As

Publication number Publication date
EP3847301A4 (en) 2022-05-04
WO2020101793A2 (en) 2020-05-22
EP3847301A2 (en) 2021-07-14
CN112639195A (en) 2021-04-09
JP2021535583A (en) 2021-12-16
KR20210056363A (en) 2021-05-18
US20230049702A1 (en) 2023-02-16
TW202030768A (en) 2020-08-16

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