JPH03217467A - Sealing material for clean room - Google Patents
Sealing material for clean roomInfo
- Publication number
- JPH03217467A JPH03217467A JP1263990A JP1263990A JPH03217467A JP H03217467 A JPH03217467 A JP H03217467A JP 1263990 A JP1263990 A JP 1263990A JP 1263990 A JP1263990 A JP 1263990A JP H03217467 A JPH03217467 A JP H03217467A
- Authority
- JP
- Japan
- Prior art keywords
- clean room
- sealing material
- polydiphenylsiloxane
- atmosphere
- clean
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003566 sealing material Substances 0.000 title claims abstract description 9
- -1 polydiphenylsiloxane Polymers 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009835 boiling Methods 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004590 silicone sealant Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
Landscapes
- Sealing Material Composition (AREA)
- Paints Or Removers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体製造用クリーンルームに用いるシール材料に関し
、
揮発成分の半導体材料への付着を無くすことを目的とし
、
ポリジフェニルシロキサンを主成分とする材料により構
成する。[Detailed Description of the Invention] [Summary] Regarding a sealing material used in a clean room for semiconductor manufacturing, the purpose is to eliminate the adhesion of volatile components to semiconductor materials, and it is composed of a material whose main component is polydiphenylsiloxane.
本発明は、半導体製造用クリーンルームに用いるシール
材料に関する。The present invention relates to a sealing material used in clean rooms for semiconductor manufacturing.
近年においては、半導体の微細化に伴い、半導体製造用
クリーンルームに要求される清浄度のレベルも高く、当
然のことながらクリーンルームに用いられる材料に対す
る要求も厳しいものとなってきている。このため、クリ
ーンルームをシールする材料に対しても、揮発性成分を
低減化することが要請されている。In recent years, with the miniaturization of semiconductors, the level of cleanliness required for semiconductor manufacturing clean rooms has also increased, and as a matter of course, the requirements for materials used in clean rooms have also become stricter. For this reason, there is a need to reduce volatile components in materials used to seal clean rooms.
従来のクリーンルームにおいては、シリコーン系シール
材としてポリジメチルシロキサンが用いられていた。と
ころが、かかるシール材を用いる場合には、ポリジメチ
ルシロキサン中の低沸点不純物が揮発してクリーンルー
ム内に残留するという問題があった。In conventional clean rooms, polydimethylsiloxane has been used as a silicone sealant. However, when such a sealing material is used, there is a problem in that low-boiling point impurities in polydimethylsiloxane volatilize and remain in the clean room.
従って、従来においては、シール材料から揮発した低沸
点不純物が半導体材料に付着するといった問題が生じて
いた。Therefore, conventionally, there has been a problem that low boiling point impurities volatilized from the sealing material adhere to the semiconductor material.
本発明は、シール材からの低沸点成分の揮発をなくし、
゛低沸点不純物の半導体材料への付着の問題を解消する
ことを目的とする。The present invention eliminates volatilization of low boiling point components from the sealing material,
``The purpose is to solve the problem of low boiling point impurities adhering to semiconductor materials.
本発明によれば、上記課題を解決するため、ポリジフェ
ニルシロキサンを主成分とするクリーンルーム用シール
材料が提供される。According to the present invention, in order to solve the above problems, a clean room sealing material containing polydiphenylsiloxane as a main component is provided.
本発明で用いるポリジフェニルシロキサンは、下記の構
造式■で示される。かかるポリジフエニルシロキサンは
、従来、高温潤滑剤等として用いられていたものである
。一方、従来用いられていたポリジメチルシロキサンは
、下記の構造式■で示される。この構造式からわかるよ
うに、ポリジメチルシロキサンの末端メチル基は分子が
小さく、下記の構造式■で示されるヘキサメチルシクロ
シロトリキサンおよび下記の構造弐■で示されるオクタ
メチルシクロテトラシロキサン等の如き低沸点不純物を
生成する。ところが、ポリジフェニルシロキサンでは、
末端基がフェニル基と分子が大きいことで、このような
シクロシロキサンを生成しない。The polydiphenylsiloxane used in the present invention is represented by the following structural formula (2). Such polydiphenylsiloxanes have conventionally been used as high-temperature lubricants and the like. On the other hand, conventionally used polydimethylsiloxane is represented by the following structural formula (2). As can be seen from this structural formula, the terminal methyl group of polydimethylsiloxane has a small molecule, such as hexamethylcyclosilotrixane shown by the following structural formula (■) and octamethylcyclotetrasiloxane shown by the following structural formula (2). Produces low boiling impurities. However, with polydiphenylsiloxane,
Because the terminal group is a phenyl group and the molecule is large, it does not produce such cyclosiloxane.
■
■
■ ■
本発明では、上記式■の材料を用いることで材料として
の安定性がよく、従来の材料．に比べて揮発成分の発生
がない。よって、クリーンルーム内の雰囲気も清浄とな
り、半導体材料に付着して半導体を侵すこともない。■ ■ ■ ■ In the present invention, by using the material of the above formula (■), it has good stability as a material and is comparable to conventional materials. No volatile components are generated compared to Therefore, the atmosphere in the clean room is also clean, and it does not adhere to semiconductor materials and attack the semiconductors.
ポリジフェニルシロキサンをシール剤として用いた場合
の雰囲気と、ポリジメチルシロキサンをシール剤として
用いた雰囲気中の低分子揮発成分（シクロシロキサン）
の含有量を、ガスクロマトグラフィーにより測定し、比
較した。結果を下記の表に示す。Atmosphere when polydiphenylsiloxane is used as a sealant and low molecular volatile components (cyclosiloxane) in the atmosphere when polydimethylsiloxane is used as a sealant
The content was measured by gas chromatography and compared. The results are shown in the table below.
表
〔発明の効果〕
以上説明したように、本発明によれば、半導体製造用ク
リーンルーム内の雰囲気のシロキサン量が低減し、クリ
ーンルーム清浄度向上に寄与するところが大きい。Table [Effects of the Invention] As explained above, according to the present invention, the amount of siloxane in the atmosphere in a semiconductor manufacturing clean room is reduced, which greatly contributes to improving the cleanliness of the clean room.
Claims (1)
ルーム用シール材料。1. Clean room sealing material whose main component is polydiphenylsiloxane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1263990A JPH03217467A (en) | 1990-01-24 | 1990-01-24 | Sealing material for clean room |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1263990A JPH03217467A (en) | 1990-01-24 | 1990-01-24 | Sealing material for clean room |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03217467A true JPH03217467A (en) | 1991-09-25 |
Family
ID=11810943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1263990A Pending JPH03217467A (en) | 1990-01-24 | 1990-01-24 | Sealing material for clean room |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03217467A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998042783A1 (en) * | 1997-03-25 | 1998-10-01 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| JPH1144443A (en) * | 1997-07-24 | 1999-02-16 | Oki Electric Ind Co Ltd | Clean room, manufacture of semiconductor element, treating chamber for manufacturing semiconductor element, manufacturing device for semiconductor element and cleaning method of member for semiconductor element |
| JP2003042498A (en) * | 2001-07-31 | 2003-02-13 | Sony Corp | System, device, and method for manufacturing semiconductor and semiconductor device |
-
1990
- 1990-01-24 JP JP1263990A patent/JPH03217467A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998042783A1 (en) * | 1997-03-25 | 1998-10-01 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| US6337365B1 (en) | 1997-03-25 | 2002-01-08 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| JPH1144443A (en) * | 1997-07-24 | 1999-02-16 | Oki Electric Ind Co Ltd | Clean room, manufacture of semiconductor element, treating chamber for manufacturing semiconductor element, manufacturing device for semiconductor element and cleaning method of member for semiconductor element |
| JP2003042498A (en) * | 2001-07-31 | 2003-02-13 | Sony Corp | System, device, and method for manufacturing semiconductor and semiconductor device |
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