JPH03216694A - Semiconductor vibration sensor - Google Patents

Semiconductor vibration sensor

Info

Publication number
JPH03216694A
JPH03216694A JP1309890A JP1309890A JPH03216694A JP H03216694 A JPH03216694 A JP H03216694A JP 1309890 A JP1309890 A JP 1309890A JP 1309890 A JP1309890 A JP 1309890A JP H03216694 A JPH03216694 A JP H03216694A
Authority
JP
Japan
Prior art keywords
light
vibration
receiving element
semiconductor
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1309890A
Other languages
Japanese (ja)
Other versions
JP3080630B2 (en
Inventor
Yoshihiro Harada
原田 嘉博
Kazunori Yuzuhara
柚原 和則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU DENSHI KK
NEC Corp
Original Assignee
KYUSHU DENSHI KK
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KYUSHU DENSHI KK, NEC Corp filed Critical KYUSHU DENSHI KK
Priority to JP02013098A priority Critical patent/JP3080630B2/en
Publication of JPH03216694A publication Critical patent/JPH03216694A/en
Application granted granted Critical
Publication of JP3080630B2 publication Critical patent/JP3080630B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To detect vibration electrically by providing a spherical body which is large enough to cut off one of light beams of light traveling from a semiconductor light emitting element to a reflecting body and reflected by the reflecting body to travel to a semiconductor light receiving element and a light- transmissive container where the spherical body is stored. CONSTITUTION:The light-nontransmissive movable spherical body 3 which cuts off the light 8 traveling from the semiconductor light emitting element 5 to the reflecting body 2 and light reflected by the reflecting body 2 to travel to the semiconductor light receiving element 6 at the same time is provided on the optical axis. The movable spherical body 3, therefore, cuts off the light in the absence of vibration, so no photocurrent flows to the semiconductor light receiving element 6, but the spherical body 3 which cuts off the light moves in the presence of vibration to make the light incident on the semiconductor light receiving element; and the photocurrent flows and the vibration is detected from the photocurrent. Consequently, the vibration can be detected electrically.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は機械的な振動を検知する振動センサーに関し、
特に光半導体素子によって振動を検知し、電気信号とし
て出力する振動センサーに間する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vibration sensor that detects mechanical vibration.
In particular, it is used in a vibration sensor that detects vibration using an optical semiconductor element and outputs it as an electrical signal.

〔従来の技術〕[Conventional technology]

従来の振動センサーは、流動体や他の物体の重心の移動
によって機械的に振動を伝達していた.このため、電気
信号への変換がむずかしくマイクロコンピュータ等への
接続が困難であった.〔発明が解決しようとする課題〕 上述した従来の振動センサーは、重心の移動等によって
検知した振動を機械的な接続によって伝達する構造とな
っているので、センサーが大型になり、信号伝達距離を
伸ばすことが出来ず、また、電気信号への変換が困難で
あり、マイクロコンピュータ等による制御系への接続が
出来ないという欠点がある。
Conventional vibration sensors mechanically transmit vibrations by moving the center of gravity of fluids or other objects. For this reason, it was difficult to convert it into an electrical signal, making it difficult to connect it to a microcomputer, etc. [Problems to be Solved by the Invention] The conventional vibration sensor described above has a structure in which vibrations detected by movement of the center of gravity are transmitted through mechanical connections, so the sensor becomes large and the signal transmission distance is shortened. It has the disadvantage that it cannot be extended, it is difficult to convert into an electrical signal, and it cannot be connected to a control system using a microcomputer or the like.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体振動センサーは、半導体発光素子と半導
体受光素子,可動球体,球体を収納する光透過性容器、
これらを組込むためのハウジングケースおよび反射板と
を有している。
The semiconductor vibration sensor of the present invention includes a semiconductor light-emitting element, a semiconductor light-receiving element, a movable sphere, a light-transmitting container housing the sphere,
It has a housing case and a reflector plate for incorporating these.

半導体発光素子から反射物に向う光とこの光が反射物に
より反射され半導体受光素子に向う光とを同時に遮断で
きるような光不透過性の可動球体を光軸上に設けること
により、無振動時には可動球体が光を遮断する結果、半
導体受光素子には、光電流は流れないが振動時では今ま
で光を遮断していた球体が動き、半導体受光素子に光が
入射され光電流が流れてしまう。この光電流によって振
動を検知する。
By providing an optically opaque movable sphere on the optical axis that can simultaneously block the light from the semiconductor light-emitting element towards the reflective object and the light reflected by the reflector and directed towards the semiconductor light-receiving element, it is possible to As a result of the movable sphere blocking light, no photocurrent flows through the semiconductor photodetector, but during vibration, the sphere that had been blocking light moves, allowing light to enter the semiconductor photodetector and photocurrent flows. . Vibration is detected by this photocurrent.

〔実施例〕〔Example〕

第1図は本発明の実施例1の断面図であり、第2図は光
透過性容器の上部より見た図である。振動がないときは
発光素子5、受光素子6の光軸上に遮光性の球体3があ
るため、発光素子5から出た光8は球体3に遮られ受光
素子6に入射しないので受光素子6には光電流は流れな
い。振動を与えると、これまで光軸を遮光していた球体
3が動き、反射板2で反射した光が受光素子に入射され
、受光素子に光電流が流れるので振動が感知できる。こ
の球体を収納する光透過性容器lの底面を受光素子6の
光軸の中心になるように光透過性容器に傾斜をつけ、こ
の傾斜の角度あるいは球体3の大きさを変えることによ
り、検知する振動の強さを変えることが出来る. 第3図,第4図に実施例2を示す.実施例lの光透過性
容器1の底面部に設置していた1個の受光素子6の廻り
に、複数の受光素子6を設置したものが実施例2である
.この他は先の実施例1と同じである。この実施例では
受光素子6が複数個あるためにそれぞれの受光素子6に
流れる電流の変化によって本体の振動だけでなく、傾き
の方向を検知できるという利点がある.また受光素子の
数を増やすことにより傾きを検知する精度を上げること
ができる. 〔発明の効果〕 以上説明したように本発明は、反射型インクラブタにお
いて、発光素子と受光素子の光軸上に遮光性の球体を可
動しやすいように設置することにより、電気的に振動を
検知することが出来るという効果がある。
FIG. 1 is a sectional view of Example 1 of the present invention, and FIG. 2 is a view from above of a light-transmitting container. When there is no vibration, the light-shielding sphere 3 is on the optical axis of the light-emitting element 5 and the light-receiving element 6, so the light 8 emitted from the light-emitting element 5 is blocked by the sphere 3 and does not enter the light-receiving element 6. No photocurrent flows through. When vibration is applied, the sphere 3 that has been shielding the optical axis moves, and the light reflected by the reflector plate 2 is incident on the light receiving element, and a photocurrent flows through the light receiving element, so that the vibration can be sensed. The light-transmissive container l that houses the sphere is tilted so that the bottom surface thereof is centered on the optical axis of the light-receiving element 6, and by changing the angle of this slope or the size of the sphere 3, detection is possible. The strength of the vibration can be changed. Embodiment 2 is shown in Figures 3 and 4. In Example 2, a plurality of light-receiving elements 6 are installed around the single light-receiving element 6 that was installed at the bottom of the light-transmitting container 1 in Example 1. Other aspects are the same as in the first embodiment. This embodiment has the advantage that since there are a plurality of light receiving elements 6, not only the vibration of the main body but also the direction of the tilt can be detected by changes in the current flowing through each light receiving element 6. In addition, by increasing the number of photodetectors, the accuracy of tilt detection can be improved. [Effects of the Invention] As explained above, the present invention enables electrical vibration detection by installing a light-shielding sphere on the optical axis of the light-emitting element and the light-receiving element in a movable manner in a reflective ink club. The effect is that it can be done.

【図面の簡単な説明】[Brief explanation of drawings]

第1図,第2図は、本発明の半導体振動センサーの実施
例1を示す。第1図は半導体振動センサーの断面図を示
し、第2図は光透過性容器の上部より見た図を示す。 第3図,第4図は半導体振動センサーの実施例2を示す
。第3図は実施例2の断面図を示し、第4図は光透過性
容器の上部より見た図を示す。
1 and 2 show a first embodiment of the semiconductor vibration sensor of the present invention. FIG. 1 shows a cross-sectional view of the semiconductor vibration sensor, and FIG. 2 shows a view from the top of the light-transmitting container. 3 and 4 show a second embodiment of the semiconductor vibration sensor. FIG. 3 shows a sectional view of Example 2, and FIG. 4 shows a view from the top of the light-transmitting container.

Claims (1)

【特許請求の範囲】[Claims] 発光素子、受光素子および反射物から構成される光反射
型振動センサーにおいて、半導体発光素子から反射物に
向う光と、この光が反射物により反射され、半導体受光
素子に向う光の少くとも一方を遮断できる大きさの球体
と、これを収納する光透過性容器を具備していることを
特徴とする半導体振動センサー。
In a light reflection type vibration sensor composed of a light-emitting element, a light-receiving element, and a reflecting object, at least one of the light directed from the semiconductor light-emitting element toward the reflecting object and the light reflected by the reflecting object and directed toward the semiconductor light-receiving element is detected. A semiconductor vibration sensor characterized by comprising a sphere large enough to block the light and a light-transmitting container that houses the sphere.
JP02013098A 1990-01-22 1990-01-22 Semiconductor vibration sensor Expired - Fee Related JP3080630B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02013098A JP3080630B2 (en) 1990-01-22 1990-01-22 Semiconductor vibration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02013098A JP3080630B2 (en) 1990-01-22 1990-01-22 Semiconductor vibration sensor

Publications (2)

Publication Number Publication Date
JPH03216694A true JPH03216694A (en) 1991-09-24
JP3080630B2 JP3080630B2 (en) 2000-08-28

Family

ID=11823677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02013098A Expired - Fee Related JP3080630B2 (en) 1990-01-22 1990-01-22 Semiconductor vibration sensor

Country Status (1)

Country Link
JP (1) JP3080630B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009036519A (en) * 2007-07-31 2009-02-19 Rohm Co Ltd Vibration sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009036519A (en) * 2007-07-31 2009-02-19 Rohm Co Ltd Vibration sensor

Also Published As

Publication number Publication date
JP3080630B2 (en) 2000-08-28

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