JPH03211790A - Ceramic multilayer wiring board - Google Patents
Ceramic multilayer wiring boardInfo
- Publication number
- JPH03211790A JPH03211790A JP736990A JP736990A JPH03211790A JP H03211790 A JPH03211790 A JP H03211790A JP 736990 A JP736990 A JP 736990A JP 736990 A JP736990 A JP 736990A JP H03211790 A JPH03211790 A JP H03211790A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- raw material
- thermal expansion
- ceramic
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 109
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 239000002994 raw material Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010304 firing Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052593 corundum Inorganic materials 0.000 abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 description 7
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミック基板と導体との熱膨張率の整合性
を確保しつつ導体抵抗を低く抑えたセラミック多層配線
基板に関し、各種電子部品等に広く利用される。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a ceramic multilayer wiring board that maintains consistency in thermal expansion coefficient between a ceramic substrate and a conductor while keeping conductor resistance low, and is suitable for use in various electronic components, etc. widely used.
従来からのセラミック多層基板としては、複数のグリー
ンシートを積層し焼成してなるセラミック基板と、この
スルーホール内に形成された導体とを有するものが知ら
れている。そして、この導体を構成する材料としては、
セラミック基板の熱膨張率との整合性を図ることを目的
に、Ｍｏ、Ｗ等の導電材料にＡｌ２Ｏ３等のセラミック
スを添加したものが用いられている。2. Description of the Related Art Conventional ceramic multilayer substrates are known to include a ceramic substrate formed by laminating and firing a plurality of green sheets, and conductors formed in the through holes. The material that makes up this conductor is
For the purpose of matching the coefficient of thermal expansion of the ceramic substrate, a conductive material such as Mo or W with ceramics such as Al2O3 added thereto is used.
近年のパブケージ等の高速化、高集積化に伴い、セラミ
ック多層配線基板の配線抵抗の低下及び導体密度の増大
が必要となって来ている。2. Description of the Related Art With the recent increase in speed and integration of circuit boards, etc., it has become necessary to lower the wiring resistance and increase the conductor density of ceramic multilayer wiring boards.
しかし、この低抵抗化のためには導電材料の含有率を上
げる必要があるが、この場合は熱膨張率の整合を図るこ
とができず、ひいてはその差の増大に伴う熱応力が増大
するので導体密度の増大を図ることができない。一方、
熱膨張率の整合を図るためにＡ １２０３等のセラミッ
ク材料の含有率を上げる必要があるが、この場合は導体
抵抗、即ち配線抵抗が上昇してしまう。However, in order to lower this resistance, it is necessary to increase the content of the conductive material, but in this case it is not possible to match the coefficients of thermal expansion, and as a result, thermal stress increases as the difference increases. It is not possible to increase the conductor density. on the other hand,
In order to match the coefficient of thermal expansion, it is necessary to increase the content of the ceramic material such as A 1203, but in this case, the conductor resistance, that is, the wiring resistance increases.
従来の前記セラミック多層配線基板においては、前記「
熱膨張率の整合性」及び「導体抵抗の低下」という相反
する要求を同時に満たすことができなかった。In the conventional ceramic multilayer wiring board, the above-mentioned "
It was not possible to simultaneously satisfy the contradictory demands of "consistency in thermal expansion coefficient" and "reduction in conductor resistance."
本発明は、上記観点に鑑みなされたものであり、導体と
セラミック基板の熱膨張率の整合性を確保しつつ導体抵
抗を低（抑えたセラミック多層配線基板（以下、単に配
線基板という）を提供することを目的とする。The present invention has been made in view of the above points, and provides a ceramic multilayer wiring board (hereinafter simply referred to as a wiring board) that has low conductor resistance while ensuring consistency in the coefficient of thermal expansion between the conductor and the ceramic board. The purpose is to
本第１発明に係わる配線基板は、スルーホールをもつセ
ラミック基板と、該スルーホール内にセラミック原料粉
末及び導電原料粉末を配置し焼成して形成された導体と
、を具備し、前記導電原料粉末は少なくともＭｏ粉末を
含み、該Ｍｏ粉末の平均粒径は１．５μｍ以下であり、
かつこれらの原料粉末全部を１００重量部とする場合、
前記Ｍｏ粉末の添加量は１５重量５ｌｌｌ（以下、この
場合の値を重量％という）以上であることを特徴とする
。A wiring board according to a first aspect of the present invention includes a ceramic substrate having a through hole, and a conductor formed by disposing ceramic raw material powder and conductive raw material powder in the through hole and firing the conductive raw material powder. contains at least Mo powder, the average particle size of the Mo powder is 1.5 μm or less,
And when all these raw material powders are 100 parts by weight,
The amount of the Mo powder added is 15% by weight or more (hereinafter, the value in this case will be referred to as weight %) or more.
このＭｏ粉末の平均粒径を１．５μｍ以下とするのは、
これを用いて焼成した焼結体の抵抗を低下させることが
でき、かつ熱膨張率も向上させることができ、低抵抗化
と熱膨張率の整合性とを具備することができるからであ
る。また、このＭ。The reason why the average particle size of this Mo powder is 1.5 μm or less is because
This is because the resistance of a sintered body fired using this material can be lowered, and the coefficient of thermal expansion can also be improved, thereby achieving low resistance and consistency in the coefficient of thermal expansion. Also, this M.
粉末の添加量を１５重量％以上とするのは、これ未満で
は低抵抗を十分に具現できないからである一方、Ｗ粉末
、Ａ ｌ ａ ０３粉末の粒径、添加量を限定しないの
は、これらは導体の抵抗又は熱膨張率にそれほど影響を
及ぼさないからである。The reason why the amount of powder added is set to 15% by weight or more is because if it is less than this, it is not possible to sufficiently realize low resistance. On the other hand, the reason why the particle size and amount of addition of W powder and Al a 03 powder are not limited is because these This is because it does not have much influence on the resistance or thermal expansion coefficient of the conductor.
本第２発明に係わる配線基板において、前記セラミック
原料粉末は１，１．０．粉末、前記導電原料粉末はＭｏ
粉末及びＷ粉末（尚、Ｗ粉末を含まない場合がある）か
らなり、Ｍ ｏ −Ｗ Ａ ｌ ２０、の３成分（２
成分の場合も含めて、このようにいう）の各原料粉末の
重量組成割合は、第７図の太線枠内の組成、即ち、前記
Ａｉ、Ｏ，粉末が０．０５〜０．３かつＭｏ粉末が０．
３〜０．９５の範囲（尚、前記Ａｌ１ｚＯ３粉末が０．
２３〜０．３かつ前記Ｍｏ粉末が０．３〜０．５５の範
囲を除く）の組成であり、抵抗値が４．０ＸＩＯ５Ω・
ｃｍ以下かつ熱膨張率が６．２５Ｘ１０／℃以上である
ことを特徴とする。In the wiring board according to the second aspect of the present invention, the ceramic raw material powder is 1,1.0. powder, the conductive raw material powder is Mo
It consists of powder and W powder (in some cases, it does not contain W powder), and the three components (2
The weight composition ratio of each raw material powder (referred to as above, including the components) is the composition within the bold line frame in FIG. Powder is 0.
3 to 0.95 (in addition, if the Al1zO3 powder is 0.
23 to 0.3 and excluding the range in which the Mo powder is 0.3 to 0.55), and the resistance value is 4.0XIO5Ω.
cm or less and a coefficient of thermal expansion of 6.25×10/°C or more.
この組成範囲内の場合は、この範囲外の組成と比べると
、低抵抗と高熱膨張率を有する。即ち、以下の実施例及
び第７図に示すように、この範囲内の場合は、十分に優
れた低抵抗（４，０Ｘ１０−５Ω’ ０ｍ以下）と高熱
膨張率（６，２５ＸｌＯ／℃以上）の特性を確保できる
。この範囲内のうち、特に同図の点線枠内は、更に望ま
しい特性（抵抗；３．０Ｘ１０−’Ω’ ａｍ以下、高
熱膨張率；６．８０Ｘ１０−５／℃以上）を示す。A composition within this range has a lower resistance and a higher coefficient of thermal expansion than a composition outside this range. That is, as shown in the following examples and FIG. 7, within this range, sufficiently low resistance (4,0X10-5Ω' 0m or less) and high coefficient of thermal expansion (6,25XlO/°C or more) are achieved. characteristics can be ensured. Within this range, particularly within the dotted line frame in the figure, more desirable characteristics (resistance: 3.0X10-'Ω' am or less, high coefficient of thermal expansion: 6.80X10-5/°C or more) are exhibited.
導体を構成する材料としては、アルミナ等のセラミック
スとこれと熱膨張率の異なる金属材料（例えばアルミナ
よりもそれが小さいＭＯｌＷ等）とを用いる。従って、
セラミック含有率が高くなると導体の熱膨張率が大きく
なりセラミック基板の熱膨張率に近くなる。一方、抵抗
値は、セラミック含有率が高くなるに従い加速度的に増
加していく。従って、セラミック含有量を増加してゆく
と、セラミック基板と導体の熱膨張率の差による熱応力
の発生を防止することはできるが、抵抗値が上昇し、著
しくセラミック基板としての性能の低下を招く。As the material constituting the conductor, ceramics such as alumina and a metal material having a different coefficient of thermal expansion (for example, MOLW or the like having a coefficient of thermal expansion smaller than that of alumina) are used. Therefore,
As the ceramic content increases, the coefficient of thermal expansion of the conductor increases and approaches the coefficient of thermal expansion of the ceramic substrate. On the other hand, the resistance value increases at an accelerating rate as the ceramic content increases. Therefore, if the ceramic content is increased, it is possible to prevent the occurrence of thermal stress due to the difference in thermal expansion coefficient between the ceramic substrate and the conductor, but the resistance value increases and the performance as a ceramic substrate is significantly reduced. invite
本第１発明における導体中には、まず、セラミツクを含
むので、導体とセラミック基板の熱膨張率との整合性を
図ることができる。First, since the conductor in the first invention includes ceramic, it is possible to match the thermal expansion coefficients of the conductor and the ceramic substrate.
一方、第１図に示すようにＭｏ粉末の粒径を小さくする
と抵抗が大変小さくなる。また、第３図及び第５図に示
すように、Ｗ粉末（第３図）及びＡｌ２Ｏ，粉末（第５
図）の粒径を変えてもあまり抵抗の変化がなく、即ち、
粒径を小さくしても抵抗はほとんど低下しない。以上よ
り、粒径の小さなＭｏ粉末を使用することにより、焼成
後の導体の抵抗を著しく低下させることができる。On the other hand, as shown in FIG. 1, if the particle size of the Mo powder is made small, the resistance becomes very small. In addition, as shown in Fig. 3 and Fig. 5, W powder (Fig. 3) and Al2O, powder (Fig.
Even if the particle size in Fig.) is changed, the resistance does not change much, that is,
Even if the particle size is reduced, the resistance hardly decreases. From the above, by using Mo powder with a small particle size, the resistance of the conductor after firing can be significantly reduced.
一方、第２図に示すように、粒径の小さなＭ。On the other hand, as shown in FIG. 2, M has a small particle size.
粉末を使用すると余り大きな増大ではないが、熱膨張率
は増大する。また、第４図及び第６図に示すように、Ｗ
粉末及びＡｊ！−０３粉末の粒径を変えても、はとんど
熱膨張率の変化はない。The use of powder increases the coefficient of thermal expansion, although the increase is not very large. In addition, as shown in FIGS. 4 and 6, W
Powder and Aj! Even if the particle size of the -03 powder is changed, there is almost no change in the coefficient of thermal expansion.
以上より、セラミックを導体中に含むとともにＭｏ粉末
の粒径を１．５μｍ以下と小さくすると、導体の熱膨張
率をセラミック基板のものに、より一層整合させること
ができるとともに、より一層の低抵抗を確保できる。From the above, by including ceramic in the conductor and reducing the particle size of the Mo powder to 1.5 μm or less, the conductor's coefficient of thermal expansion can be more closely matched to that of the ceramic substrate, and the resistance can be further lowered. can be secured.
また、本第２発明においても、導体の組成をＭｏ−Ｗ−
Ａｌｔｏｓの３成分系とする場合、その各原料粉末の重
量組成割合を種々検討した所、各原料粉末の重量組成割
合が、第７図の太線枠内の組成の場合は、大変骨れた低
抵抗（４，０Ｘ１０５Ω・Ｃ１１以下）と高熱膨張率（
６，２５ＸＩＯ／℃以上）の特性を確保でき、実用上大
変有用である。更に、この範囲内のうち、特に同図の点
線枠内は、更に好ましい低抵抗及び高熱膨張率を示す。Also, in the second invention, the composition of the conductor is Mo-W-
In the case of Altos' three-component system, we investigated various weight composition ratios of each raw material powder, and found that if the weight composition ratio of each raw material powder was within the thick line frame in Figure 7, it would be extremely low. Resistance (4.0x105Ω・C11 or less) and high coefficient of thermal expansion (
6.25XIO/°C or higher), which is very useful in practice. Further, within this range, particularly within the dotted line frame in the figure, a more preferable low resistance and high coefficient of thermal expansion are exhibited.
以下実施例により本発明を具体的に説明する。 The present invention will be specifically explained below using Examples.
実施例！
本実施例は、導体の構成に使用する原料粉末であるＭｏ
粉末、Ｗ粉末及びＡＪ！ａｏ３粉末の粒径が、導体の抵
抗及び熱膨張率に与える影響を検討したものである。Example! In this example, the raw material powder used for constructing the conductor, Mo
powder, W powder and AJ! The effect of the particle size of ao3 powder on the resistance and coefficient of thermal expansion of a conductor was investigated.
（１）試験片の作製
平均粒径が０．５６μｍ （Ｗ＋ ） 、１．３μｍ（
Ｗ２） 、２ 、 ８ ａｍ （Ｗａ ）の各Ｗ粉末、
同０６ ７、ｕｍ （Ｍｏ＋ ） 、 １． ４
ａｍ （Ｍｏｗ ） 、２．８ａｍ （ＭＯ３）
のＭｏ粉末、更に、同０゜３ μｍ （Ａｊ！＋
） 、 ０． ５ａｍ （Ａｌ１ ） ２． ９
μｍ （Ａ １ ｓ ）の各Ａｌ２Ｏ５粉末をそれぞれ
準備した。尚、この平均粒径は、空気通過法により測定
した。(1) The average particle diameter of the test piece was 0.56 μm (W+), 1.3 μm (
Each W powder of W2), 2, 8 am (Wa),
06 7, um (Mo+), 1. 4
am (Mow), 2.8am (MO3)
Mo powder of 0°3 μm (Aj!+
), 0. 5am (Al1) 2. 9
Each Al2O5 powder of μm (A 1 s ) was prepared. Note that this average particle size was measured by an air passage method.
まず、以下のようにして試験片Ｎα１を作製した。即ち
、Ｗ１粉末（密度； １９．３ｇ／ｃｍ’）を１２０ｇ
、Ｍｏ＋粉末（密度；１Ｏ１３ｇ ／ ｃ ｍ’）を１
２０ｇ％Ａ１．粉末（密度：３．９９ｇ／ｃｍ’）を６
０ｇ１更に焼結助剤（ＳｉＯｚ：ＣａＯ：Ｍｇ０＝７０
：１５：１５重量比）を１２ｇと、アセトン２００ｍｌ
を加えて湿式ボールミルにて２４時間混合した。尚、こ
のＷ１粉末、Ｍ。First, a test piece Nα1 was prepared as follows. That is, 120 g of W1 powder (density: 19.3 g/cm')
, Mo + powder (density: 1O13g/cm') at 1
20g% A1. Powder (density: 3.99g/cm')
0g1 and sintering aid (SiOz:CaO:Mg0=70
:15:15 weight ratio) and 200ml of acetone.
was added and mixed in a wet ball mill for 24 hours. In addition, this W1 powder, M.
、粉末及び／１．粉末の体積％は、各々、１９．３６．
４５％であり、その重量％は各々４０．４０１２０％で
ある。, powder and /1. The volume percent of the powder is 19.36.
45%, and their weight percentages are 40.40120%, respectively.
その後、成形用にを機バインダーを加え、混合し、次い
で湯浴でアセトンを除去して、所定の粉末を得た。この
粉末を６０メツシユふるいに通し、この通過した粉末を
金型に入れプレス成形（１ｔ／ｃｍ’）し、次いで水素
炉を用いて焼成（１５００℃、２時間）し、試験片胆１
（４０Ｘ５Ｘ５ｍｍ）を作製した。Thereafter, a machine binder for molding was added and mixed, and then acetone was removed in a hot water bath to obtain a predetermined powder. This powder was passed through a 60-mesh sieve, and the passed powder was put into a mold and press-molded (1 t/cm'), and then fired using a hydrogen furnace (1500°C, 2 hours).
(40X5X5mm) was produced.
更に、前記と同様にして、表に示す粒径の各原料粉末の
各組合せを用いて、各試験片社２〜１６を作製した。Furthermore, in the same manner as above, test pieces 2 to 16 were prepared using each combination of raw material powders having the particle sizes shown in the table.
（２）性能試験
前記各試験片の比抵抗及び熱膨張率を測定し、その性能
評価を行い、その結果を表及び第１図〜第６図に示す。(2) Performance test The specific resistance and coefficient of thermal expansion of each test piece were measured and the performance was evaluated. The results are shown in the table and FIGS. 1 to 6.
特に、第１〜６図は、表の結果をまとめたものである。In particular, Figures 1 to 6 summarize the results in tables.
尚、比抵抗は、前記試験片より１．５Ｘ１．５Ｘ２０ｍ
ｍに切り出した試料を用い、４端子法により測定した。In addition, the specific resistance is 1.5X1.5X20m from the above test piece.
Measurement was performed using a four-terminal method using a sample cut out to a size of m.
熱膨張率は３５Ｘ３．５Ｘ１５ｍｍに切り出した試料ニ
テ、石英を標準試料として室温から１０００℃までの測
定を行った。The coefficient of thermal expansion was measured from room temperature to 1000° C. using a sample of knitted quartz cut into a size of 35×3.5×15 mm as a standard sample.
（３）性能評価
第１図に示すように、Ｍｏ粉末の粒径を小さくした場合
には、焼結体の比抵抗が小さな値となる。この場合、第
２図に示すように、同時に焼結体の熱膨張率が大きくな
るが、その変化量は小さい。また、第３図〜第６図に示
すように、Ｗ粉末及びＡ ｌ ２０ ｆｆ粉末の粒径が
、焼結体の比抵抗、熱膨張率に与える影響は少ない。従
って、Ｍｏ粉末の粒径を小さくすることで、セラミック
基板の熱膨張率との整合を図ることができるとともに、
導体が本来具備すべき導電性という性質を、更に一層発
揮することができる。(3) Performance Evaluation As shown in FIG. 1, when the particle size of the Mo powder is made small, the specific resistance of the sintered body becomes a small value. In this case, as shown in FIG. 2, the coefficient of thermal expansion of the sintered body increases at the same time, but the amount of change is small. Moreover, as shown in FIGS. 3 to 6, the particle sizes of the W powder and the Al 20 ff powder have little influence on the resistivity and coefficient of thermal expansion of the sintered body. Therefore, by reducing the particle size of Mo powder, it is possible to match the coefficient of thermal expansion of the ceramic substrate, and
The property of electrical conductivity that a conductor should originally have can be further exhibited.
実施例２
本実施例は、Ｗ粉末、Ｍ０粉末及びＡ ｌ ２０ ｓ粉
末の組成が、導体抵抗及び熱Ｉ偏重に与える影響を検討
したものである。Example 2 In this example, the influence of the compositions of W powder, M0 powder, and Al 20 s powder on conductor resistance and thermal I bias was investigated.
実施例１で最適とされたＷ粉末（前３２Ｗ、）、Ｍｏ粉
末（前記Ｍｏ、）及びＡ ｌ ２０ 、粉末（前記へ！
２）の組合せ（試験片Ｎ［１１０）を用い、その組成を
適宜変化させ、実施例１と同様の方法により各試験片を
作製し、その比抵抗及び熱膨張率を測定した。その結果
を、Ｍｏ Ｗ Ａｌ２Ｏ３の３成分系図として、第
７図（重量組成比）、第８図（体積組成比、抵抗）及び
第９図（体積組成比、熱膨張率）に示す。The W powder (32W, above), Mo powder (Mo, ), and Al 20 powder (see above!), which were optimized in Example 1, were optimized.
Using the combination of 2) (test piece N[110) and changing the composition appropriately, each test piece was prepared in the same manner as in Example 1, and its specific resistance and coefficient of thermal expansion were measured. The results are shown in FIG. 7 (weight composition ratio), FIG. 8 (volume composition ratio, resistance), and FIG. 9 (volume composition ratio, coefficient of thermal expansion) as a three-component family tree of Mo W Al2O3.
この結果によれば、抵抗値が低く （４，０ＸＩＯ−Ｓ
Ω−ｃＩｌ以下）かつ熱膨張率の大きい（６，２５Ｘ１
０−’／℃以上）を示す組成は、第７図中の太線枠内の
組成である。更に、その内、特に望ましい組成は、第７
図中の点線枠内の組成である。According to this result, the resistance value is low (4,0XIO-S
Ω-cIl or less) and has a large coefficient of thermal expansion (6,25X1
0-'/°C or higher) is the composition within the bold line frame in FIG. Furthermore, among them, a particularly desirable composition is the seventh one.
The composition is within the dotted line frame in the figure.
これらの枠内の組成では、大変優れた低抵抗と高熱膨張
率の双方を確保できるので、最近の電子回路基板に要求
される高度な特性にも応えることができる。With a composition within these limits, it is possible to ensure both extremely low resistance and high coefficient of thermal expansion, and therefore it is possible to meet the advanced characteristics required of recent electronic circuit boards.
尚、本発明においては、前記具体的実施例に示すものに
限られず、目的、用途に応じて本発明の範囲内で種々変
更した実施例とすることができる。即ち、第１発明にお
いて、セラミック原料粉末の材質は、Ａ１□Ｏ１に限ら
ずムライト、窒化珪素等地のものを用いることができる
。また、セラミック基板の材質も特に限定されないが、
導体に用いられるセラミック材料と同−又は同種のもの
が好ましい。It should be noted that the present invention is not limited to those shown in the above-mentioned specific embodiments, and may be modified in various ways within the scope of the present invention depending on the purpose and use. That is, in the first invention, the material of the ceramic raw material powder is not limited to A1□O1, but other materials such as mullite and silicon nitride can be used. Furthermore, the material of the ceramic substrate is not particularly limited, but
Preferably, the ceramic material is the same or of the same type as the ceramic material used for the conductor.
本第１発明の配線基板は、前記作用を有するので、Ｍｏ
粉末の粒径を小さくするだけで、導体の低抵抗化とセラ
ミック基板との熱膨張率の整合の双方を達成でき、電子
回路基板として大変有用であり、近年の要求に十分に応
えることができる。Since the wiring board of the first invention has the above-mentioned effect, Mo
By simply reducing the particle size of the powder, it is possible to achieve both low resistance of the conductor and matching of the coefficient of thermal expansion with the ceramic substrate, making it extremely useful as an electronic circuit board and fully meeting the demands of recent years. .
また、本第２発明の配線基板は、Ａ ｌ ａ Ｏ３粉末
、Ｍｏ粉末及びＷ粉末の所定組成を有することにより、
導体の低抵抗化（抵抗値；４．０ＸＩＯ５Ω・０ｍ以下
）とセラミック基板の熱膨張率との整合（熱膨張率；６
．２５Ｘ１０−５／℃以上）の双方を達成でき、前記と
同様に有用な効果をもつ。この場合、特に、Ｍｏ粉末の
粒径を１．５μｍ以下の小さなものにすれば、更に優れ
た効果を有する。Further, the wiring board of the second invention has a predetermined composition of Al a O3 powder, Mo powder, and W powder, so that
Low resistance of the conductor (resistance value: 4.0XIO5Ω・0m or less) and matching with the thermal expansion coefficient of the ceramic substrate (thermal expansion coefficient: 6
．． 25×10 −5 /° C. or higher), and has the same useful effects as mentioned above. In this case, particularly if the particle size of the Mo powder is reduced to 1.5 μm or less, even better effects can be obtained.
第１図は実施例１においてＭｏ粉末の平均粒径と比抵抗
の関係を示すグラフ、第２図はＭｏ粉末の平均粒径と熱
膨張率の関係を示すグラフ、第３図はＷ粉末の平均粒径
と比抵抗の関係を示すグラフ、第４図はＷ粉末の平均粒
径と熱膨張率の関係を示すグラフ、第５図はＡｌ１ａｏ
ｓ粉末の平均粒径と比抵抗の関係を示すグラフ、第６図
はＡｌ２Ｏ、粉末の平均粒径と熱膨張率の関係を示すグ
ラフ、第７図は実施例２に係わるＭ ｏ −Ｗ Ａ
ｌ ａ○３の３成分の各原料粉末の重量組成割合に右い
て第２発明の範囲を示すグラフ、第８図は実施例２に係
わるＭｏ Ｗ Ａ１２０ｚの３成分の各原料粉末の
体積組成割合と比抵抗の関係を示すグラフ、第９図は実
施例２に係わるＭｏ Ｗ Ａｌ２Ｏ、の３成分の各
原料粉末の体積組成割合と熱膨張率の関係を示すグラフ
である。Fig. 1 is a graph showing the relationship between the average particle size and specific resistance of Mo powder in Example 1, Fig. 2 is a graph showing the relationship between the average particle size and thermal expansion coefficient of Mo powder, and Fig. 3 is a graph showing the relationship between the average particle size and thermal expansion coefficient of Mo powder. A graph showing the relationship between average particle size and specific resistance, Figure 4 is a graph showing the relationship between average particle size and thermal expansion coefficient of W powder, and Figure 5 is a graph showing the relationship between average particle size and thermal expansion coefficient of W powder.
A graph showing the relationship between the average particle size and specific resistance of the s powder, Figure 6 is a graph showing the relationship between the average particle size of the Al2O powder and the coefficient of thermal expansion, and Figure 7 is a graph showing the relationship between the average particle size of the Al2O powder and the coefficient of thermal expansion.
A graph showing the range of the second invention based on the weight composition ratio of each raw material powder of the three components of l a○3, and FIG. 8 shows the volume composition ratio of each raw material powder of the three components of Mo W A120z according to Example 2. FIG. 9 is a graph showing the relationship between the volume composition ratio and the coefficient of thermal expansion of each of the three component raw material powders of Mo W Al 2 O according to Example 2.
Claims (2)
ホール内にセラミック原料粉末及び導電原料粉末を配置
し焼成して形成された導体と、を具備するセラミック多
層配線基板において、 前記導電原料粉末は少なくともＭｏ粉末を含み、該Ｍｏ
粉末の平均粒径は１．５μｍ以下であり、かつこれらの
原料粉末全部を１００重量部とする場合、前記Ｍｏ粉末
の添加量は１５重量部以上であることを特徴とするセラ
ミック多層配線基板。(1) A ceramic multilayer wiring board comprising a ceramic substrate having a through hole and a conductor formed by arranging and firing ceramic raw material powder and conductive raw material powder in the through hole, wherein the conductive raw material powder is at least Contains Mo powder, the Mo
A ceramic multilayer wiring board characterized in that the average particle size of the powder is 1.5 μm or less, and when the total amount of these raw powders is 100 parts by weight, the amount of the Mo powder added is 15 parts by weight or more.
ホール内にセラミック原料粉末及び導電原料粉末を配置
し焼成して形成された導体と、を具備するセラミック多
層配線基板において、 前記セラミック原料粉末は、Ａｌ＿２Ｏ＿３粉末からな
り、前記導電原料粉末は、Ｍｏ粉末及びＷ粉末のうちの
少なくともＭｏ粉末を含み、 前記各原料粉末の３成分重量組成割合は、前記Ａｌ＿２
Ｏ＿３粉末が０．０５〜０．３かつＭｏ粉末が０．３〜
０．９５の範囲（尚、前記Ａｌ＿２Ｏ＿３粉末が０．２
３〜０．３かつ前記Ｍｏ粉末が０．３〜０．５５の範囲
を除く）であり、 抵抗値が４．０×１０＾−＾５Ω・ｃｍ以下かつ熱膨張
率が６．２５×１０＾−＾５／℃以上であることを特徴
とするセラミック多層配線基板。(2) A ceramic multilayer wiring board comprising a ceramic substrate having a through hole and a conductor formed by arranging and firing ceramic raw material powder and conductive raw material powder in the through hole, wherein the ceramic raw material powder is The conductive raw material powder is made of Al_2O_3 powder, and the conductive raw material powder includes at least Mo powder of Mo powder and W powder, and the weight composition ratio of the three components of each of the raw material powders is
O_3 powder is 0.05~0.3 and Mo powder is 0.3~
0.95 range (note that the Al_2O_3 powder is 0.2
3 to 0.3 and the Mo powder is in the range of 0.3 to 0.55), the resistance value is 4.0 x 10^-^5 Ω cm or less, and the coefficient of thermal expansion is 6.25 x 10 A ceramic multilayer wiring board characterized by a temperature of ＾-＾5/℃ or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP736990A JP2838300B2 (en) | 1990-01-16 | 1990-01-16 | Ceramic multilayer wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP736990A JP2838300B2 (en) | 1990-01-16 | 1990-01-16 | Ceramic multilayer wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03211790A true JPH03211790A (en) | 1991-09-17 |
| JP2838300B2 JP2838300B2 (en) | 1998-12-16 |
Family
ID=11664056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP736990A Expired - Fee Related JP2838300B2 (en) | 1990-01-16 | 1990-01-16 | Ceramic multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2838300B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545598A (en) * | 1993-02-12 | 1996-08-13 | Ngk Spark Plug Co., Ltd. | High heat conductive body and wiring base substrate fitted with the same |
-
1990
- 1990-01-16 JP JP736990A patent/JP2838300B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545598A (en) * | 1993-02-12 | 1996-08-13 | Ngk Spark Plug Co., Ltd. | High heat conductive body and wiring base substrate fitted with the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2838300B2 (en) | 1998-12-16 |
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