JPH03209851A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPH03209851A
JPH03209851A JP510390A JP510390A JPH03209851A JP H03209851 A JPH03209851 A JP H03209851A JP 510390 A JP510390 A JP 510390A JP 510390 A JP510390 A JP 510390A JP H03209851 A JPH03209851 A JP H03209851A
Authority
JP
Japan
Prior art keywords
power supply
ttl
line
impedance
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP510390A
Other languages
Japanese (ja)
Inventor
Keiji Miura
三浦 敬次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP510390A priority Critical patent/JPH03209851A/en
Publication of JPH03209851A publication Critical patent/JPH03209851A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To realize a power supply bus line optimal in impedance by a method wherein the power supply line wire is divided into narrow power supply line wires through the intermediary of slits, and the power supply line wires are adjusted in wiring width by filling the slit of the same layer with a wiring material basing on the ratio of number of circuits to which the line wires concerned supply power. CONSTITUTION:A power supply wiring 1 is made to serve as a TTL output bus line, and a power supply wiring 4 is made to serve as an ECL output bus line. Provided that TTL circuits are larger than ECL circuits in number, slit filling patterns 6a are filled into slits to enable power supply bus lines 1-3 to serve as the TTL output bus line. Therefore, the TTL output bus line becomes large in width, so that it can be decreased in impedance and made smaller in fluctuation of ground level when a TTL output terminal is switched from a high to a low level. By this setup, a power supply bus line optimal in impedance can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は集積回路装置に関し、特にマスタスライス方式
集積回路の電源配線に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an integrated circuit device, and particularly to power supply wiring for a master slice integrated circuit.

〔従来の技術〕[Conventional technology]

ECLレベルインターフェース回路と、TTLやCMO
Sレベルインタフェース回路等を1チツプ内に混載して
いる半導体装置においては、グランドが揺れて、他の入
出力回路に影響を与えたり、内部のグランドに影響がな
いように第4図で示すようにECL出力用パスラインと
TTL出力用パスラインを用意しているが、第4図にお
いて、TTL出力回路の出力端子の信号レベルが高レベ
ルから低レベルにスイッチングした場合、負荷の放電電
流が、TTLレベル用パスラインを通り、グランドに流
れるためこの放電電流とTTLレベル用パスラインのイ
ンピーダンスにより、TTLレベル用パスラインに電圧
降下を生じ、グランドレベルが一時的に上昇するなめ、
入力のスレッシュホールドレベルが上がり、入力に高レ
ベルが印加されていた場合、低レベルとして信号が伝達
されてしまうような誤動作が起きたり、又、出力の低レ
ベルが変動して上昇してしまうため、次段の集積回路に
誤って信号が伝達される事が起きる。
ECL level interface circuit, TTL and CMO
In semiconductor devices in which S-level interface circuits, etc. are mounted on a single chip, the ground is grounded as shown in Figure 4 to prevent it from affecting other input/output circuits or affecting the internal ground. In Fig. 4, when the signal level of the output terminal of the TTL output circuit switches from a high level to a low level, the discharge current of the load is Since this discharge current flows to the ground through the TTL level pass line, this discharge current and the impedance of the TTL level pass line cause a voltage drop on the TTL level pass line, causing a temporary rise in the ground level.
If the input threshold level increases and a high level is applied to the input, a malfunction may occur where the signal is transmitted as a low level, or the low level of the output may fluctuate and rise. , a signal may be erroneously transmitted to the next stage integrated circuit.

又、ECL出力回路の出力端子が低レベルから高レベル
にスイッチングする際も、負荷の充電電流がグランドか
らECL出力レベル用パスラインを流れるため、この充
電電流とECLレベル用パスラインのインピーダンスに
より、ECL出力レベル用パスラインに電圧降下が生じ
、グランドレベルが一時的に下がるため、レベルがグラ
ンドに依存する他のECL出力回路の出力レベルに影響
を及ぼすことになる。
Also, when the output terminal of the ECL output circuit switches from a low level to a high level, the charging current of the load flows from the ground to the ECL output level path line, so due to this charging current and the impedance of the ECL level path line, A voltage drop occurs on the ECL output level pass line and the ground level temporarily drops, which affects the output levels of other ECL output circuits whose levels depend on the ground.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のマスタスライス方式の集積回路装置の電
源配線幅は、第3図に示すように予め設計し、決定され
ているので、構造上変更する事が容易ではない。そのた
めECLレベルインターフェースがTTLレベルインタ
ーフェースに比べ数が多い時でもECL出力用のパスラ
インのインピーダンスとTTL出力バスラインのインピ
ーダンスは同等であり、ECL出力のスイッチングによ
るグランドのレベル変動が大きく、又、TTLレベルイ
ンターフェースがECLレベルインターフェースに比べ
数が多い時は、TTL出力のスイッチングによるグラン
ドのレベル変動が大きいという事と、わずかな電流しか
流れない電源配線の幅が広く無駄が多いという欠点があ
る。
Since the power supply wiring width of the conventional master slice type integrated circuit device described above is designed and determined in advance as shown in FIG. 3, it is not easy to change the structure. Therefore, even when the number of ECL level interfaces is larger than that of TTL level interfaces, the impedance of the ECL output pass line and the impedance of the TTL output bus line are the same, and the ground level fluctuation due to switching of the ECL output is large. When the number of level interfaces is larger than that of ECL level interfaces, the drawbacks are that ground level fluctuations due to TTL output switching are large and that the power supply wiring is wide and wasteful through which only a small amount of current flows.

本発明の目的は、電源配線幅を使用する回路種類数の比
により容易に変更することができ、最適な電源パスライ
ンのインピーダンスを得ることができる集積回路装置を
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide an integrated circuit device in which the width of power supply wiring can be easily changed depending on the ratio of the number of types of circuits used, and an optimum impedance of a power supply path line can be obtained.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、電源ライン配線をスリットを介
して細く区切り使用する回路種類数の比により、電源ラ
イン配線幅を配線材料を用いて同層のスリットを埋める
事により大電流が流れる側のパスラインを太くし、イン
ピーダンスを低減させるという手段を有する。
In the semiconductor device of the present invention, the power line wiring is divided into thin sections through slits, and the width of the power line wiring is determined by filling the slits in the same layer with wiring material, depending on the ratio of the number of circuit types used. It has a means of making the pass line thicker and reducing the impedance.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の平面図である。電源配線1
はTTL出力用パスライン、電源配線4はECL出力用
パスラインであり、例えばTTL回路がECL回路の数
に対し多い場合、同図のように、電源パスライン1,2
.3を電源配線と同層のスリット埋めパタン6aを入れ
る事により、TTL出力用のパスラインを太くし、イン
ピーダンスを低減させる事により、TTL出力端子が高
レベルから低レベルにスイッチングする時のグランドレ
ベルの変動をより少くする事ができる。又、ECL出力
回路がTTL回路の数に対し多い場合はECL用パスラ
イン4側のスリットにスリット埋めパターンを入れる事
により、ECL出力用のパスラインを太くし、インピー
ダンスを低減させる事により、ECL出力端子が低レベ
ルから高レベルにスイッチングする時のグランドレベル
の変動をより少くする事ができる。
FIG. 1 is a plan view of one embodiment of the present invention. Power wiring 1
is a pass line for TTL output, and power supply wiring 4 is a pass line for ECL output. For example, when the number of TTL circuits is larger than the number of ECL circuits, power supply pass lines 1 and 2 are connected as shown in the figure.
.. By inserting the slit filling pattern 6a in the same layer as the power supply wiring in 3, the path line for TTL output is made thicker and the impedance is reduced, thereby reducing the ground level when the TTL output terminal switches from high level to low level. fluctuations can be reduced. In addition, if the number of ECL output circuits is larger than the number of TTL circuits, by inserting a slit filling pattern into the slits on the ECL pass line 4 side, the ECL output pass line can be made thicker and the impedance reduced. It is possible to further reduce ground level fluctuations when the output terminal switches from low level to high level.

第2図は、本発明の他の実施例の平面図である。電源配
線1はTTL出力用パスラインであり、電源配線4はE
CL出力用パスラインであり、各辺毎にインピーダンス
調節用パスラインを分割している。辺AにTTL出力の
使用が多く、5− 辺BでECL出力の使用が多い場合、同図のように、辺
Aではスリット埋めパターン6bを入れる事により、T
TL出力用パスラインを強化し辺Bではスリット埋めパ
ターン6Cを入れる事によりECL出力用パスラインを
強化する事ができるなめ、各辺ごとに電源配線の幅を変
化させ、大電流の流れる側のパスラインのインピーダン
スを低減し、レベルの変動を少くする事ができる。
FIG. 2 is a plan view of another embodiment of the invention. Power supply wiring 1 is a pass line for TTL output, and power supply wiring 4 is an E
This is a pass line for CL output, and the pass line for impedance adjustment is divided for each side. If TTL output is often used on side A and ECL output is often used on side B, as shown in the same figure, by inserting the slit filling pattern 6b on side A, TTL output is often used.
By strengthening the TL output pass line and inserting a slit filling pattern 6C on side B, the ECL output pass line can be strengthened.The width of the power supply wiring is changed for each side, and the side where large current flows is strengthened. It is possible to reduce the impedance of the pass line and reduce level fluctuations.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、電源配線をスリットを介
して細く区切り、使用する回路型式の数により、電源ラ
イン配線幅に同層のスリット埋めパターンを入れる事に
より最適な電源パスラインのインピーダンスを得る事が
できる効果がある。
As explained above, the present invention divides the power supply wiring into thin sections through slits, and depending on the number of circuit types used, the impedance of the power supply path line is optimized by inserting a slit filling pattern in the same layer in the width of the power supply line wiring. There are effects that can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の要部の平面図、第2図は本
発明の他の実施例の要部の平面図、第3図は従来の半導
体装置の電源ライン配線の平面図、第4図は従来のEC
Lレベル出力回路とTT613、 Lレベル出力回路を1チツプ内に混載する半導体装置の
回路図である。 1.4・・・パスライン、2,3・・・インピーダンス
調節用パスライン、5・・・スリット、6a、6b。 6C・・・同層スリット埋めバタン、7・・・TTL出
力用パスライン、8・・・ECL出力用バスラン。
FIG. 1 is a plan view of the main parts of an embodiment of the present invention, FIG. 2 is a plan view of the main parts of another embodiment of the invention, and FIG. 3 is a plan view of the power line wiring of a conventional semiconductor device. , Figure 4 shows the conventional EC
FIG. 2 is a circuit diagram of a semiconductor device in which an L level output circuit, a TT613, and an L level output circuit are mounted together in one chip. 1.4... Pass line, 2, 3... Pass line for impedance adjustment, 5... Slit, 6a, 6b. 6C... Same layer slit filling button, 7... Pass line for TTL output, 8... Bus run for ECL output.

Claims (1)

【特許請求の範囲】[Claims] マスタスライス式集積回路装置の複数の電源ライン配線
が、装置の周辺にわたって同心状に設けられている集積
回路装置において、前記集積回路装置の電源ライン配線
を、スリットを介して細く区切り、回路種類の使用数の
比により、電源ライン配線幅を、配線材料を用いて同層
のスリットを埋める事により調節し、大電流が流れる側
の電源ラインのインピーダンスを容易に低減させたこと
を特徴とする集積回路装置。
In an integrated circuit device in which a plurality of power line wirings of a master slice type integrated circuit device are provided concentrically around the periphery of the device, the power line wiring of the integrated circuit device is divided into thin sections through slits, and the circuit type An integrated circuit characterized by easily reducing the impedance of the power line on the side through which large current flows by adjusting the power line wiring width by filling the slits in the same layer with wiring material according to the ratio of the numbers used. circuit device.
JP510390A 1990-01-12 1990-01-12 Integrated circuit device Pending JPH03209851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP510390A JPH03209851A (en) 1990-01-12 1990-01-12 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP510390A JPH03209851A (en) 1990-01-12 1990-01-12 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPH03209851A true JPH03209851A (en) 1991-09-12

Family

ID=11602034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP510390A Pending JPH03209851A (en) 1990-01-12 1990-01-12 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPH03209851A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729048A (en) * 1993-09-17 1998-03-17 Fujitsu Limited Cmos ic device suppressing spike noise
WO2006103897A1 (en) * 2005-03-09 2006-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729048A (en) * 1993-09-17 1998-03-17 Fujitsu Limited Cmos ic device suppressing spike noise
WO2006103897A1 (en) * 2005-03-09 2006-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device

Similar Documents

Publication Publication Date Title
US5694065A (en) Switching control circuitry for low noise CMOS inverter
US5045725A (en) Integrated standard cell including clock lines
US4499484A (en) Integrated circuit manufactured by master slice method
JPH01246847A (en) Integrated circuit
US5670815A (en) Layout for noise reduction on a reference voltage
KR890005233B1 (en) A phase changing circuit
JPH03209851A (en) Integrated circuit device
KR100246592B1 (en) Semiconductor integrated circuit chip
JPH08139579A (en) Current source and semiconductor integrated circuit device
JPH0630377B2 (en) Semiconductor integrated circuit device
JPH0147898B2 (en)
US6603219B2 (en) Semiconductor integrated circuit
US5812031A (en) Ring oscillator having logic gates interconnected by spiral signal lines
US6842092B2 (en) Apparatus and method for reducing propagation delay in a conductor
JPS643054B2 (en)
JPH0419807Y2 (en)
JPH01111342A (en) Package for integrated circuit
JPH02251169A (en) Semiconductor integrated circuit device
JPH022122A (en) Semiconductor integrated circuit
KR100367317B1 (en) Transistor device of mos structure in which variation of output impedance resulting from manufacturing error is reduced and manufacturing the same
KR100670745B1 (en) Semiconductor memory device devided powerline between data driver and datastrobe driver
KR20000020191A (en) Semiconductor ic having power line and ground line for reducing emi
JPH0722594A (en) Semiconductor integrated circuit device
KR20000025435A (en) Data output buffer of semiconductor memory device
JPH04171980A (en) Semiconductor integrated circuit