JPH03209200A - Aperture for shaping shape of charged particle beam - Google Patents
Aperture for shaping shape of charged particle beamInfo
- Publication number
- JPH03209200A JPH03209200A JP474590A JP474590A JPH03209200A JP H03209200 A JPH03209200 A JP H03209200A JP 474590 A JP474590 A JP 474590A JP 474590 A JP474590 A JP 474590A JP H03209200 A JPH03209200 A JP H03209200A
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- particle beam
- charged particle
- shape
- shaping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims abstract description 25
- 238000007493 shaping process Methods 0.000 title claims abstract description 16
- 230000005684 electric field Effects 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は荷′竃粒子ビーム金利用するイオン注入機や
果束イオンビーム装置のビーム形状整形用アパチャーが
、長期にわたって継続して機龜倉はたすようにしたもの
に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention provides a beam shape shaping aperture for ion implanters and bundle ion beam devices that utilize particle beam gold, and that can be used continuously over a long period of time. Concerning something that is made to work.
第2図げ従米のビーム形状整形用アパチャー金示f斜視
区,第8図ri第2図のm−m線に釦ける断面図である
。FIG. 2 is a perspective section showing an aperture for shaping the beam shape of the secondary beam; FIG. 8 is a sectional view taken along the line mm in FIG. 2;
図VC釦いて、(7)はアバチャー本体、(8)は開口
部金示す。In the figure VC button, (7) shows the aperture body, and (8) shows the opening metal.
従来のビーム形状螢形用アパチャーは荷電粒子ビームの
発散分金1リ除し、ビーム形状’5−−Hの大きさに螢
形するものである。A conventional beam shape aperture is designed to divide the divergence of a charged particle beam by 1 and shape the beam to a size of '5--H'.
アパチャ−本体(7)は荷電粒子ビームに垂直に定位1
tK固定されているため,開口部{8}の位置も定めら
れてし筐う。筐た、開口部(8)のfr面は第3図に示
すように、発散を抑めるためにテーパが付いている。The aperture body (7) is oriented perpendicularly to the charged particle beam.
Since tK is fixed, the position of the opening {8} is also determined. As shown in FIG. 3, the fr surface of the opening (8) of the housing is tapered to suppress divergence.
従来のビーム形状堅形用アパチャーは以上のようi’(
構或されていたので、長期間、荷電粒子ビームがアバチ
ャーVC5射されると,アバチャーの開口部の形状が荷
電粒子ビームにより削られて犬き〈なり、そのために荷
竃粒子ビームの集収性が悪くなり、制御性の点で装宜性
能t劣化させるなどの問題点があった。The conventional aperture for a rigid beam shape is i'(
Therefore, when a charged particle beam is irradiated with the aperture VC5 for a long period of time, the shape of the aperture of the aperture is scraped by the charged particle beam, resulting in a sharp shape, which impairs the ability to collect the particle beam. There were problems such as deterioration of timing performance in terms of controllability.
この発明に上記のような問題点を解消するためKなされ
たもので,ビーム形状整形用アバチャーの開口部金虜時
所濯の開口径に維持できること金目的とする。This invention has been developed in order to solve the above-mentioned problems, and it is an object of the present invention to maintain the aperture diameter of the aperture of the beam shape shaping aperture at a desired diameter when the aperture is fixed.
C課題を解決するための手段〕
この発明に係る荷電粒子ビームの形状整形用アバチャー
は、開口形状にoJ動機構を持たせることにより開口径
t町変としたものである。Means for Solving Problem C] The aperture for shaping the shape of a charged particle beam according to the present invention has an aperture diameter of t by providing an OJ movement mechanism to the aperture shape.
この発明にふ・ける?ti竃粒子ビームの形状整形用ア
パチャーは,開口形状の口J動機構により、荷電粒子ビ
ームで削られた部分倉元の形状に復元する。Do you want to indulge in this invention? The aperture for shaping the particle beam is restored to the shape of the partial chamber carved by the charged particle beam by the aperture-shaped opening mechanism.
筐た、開口形状全変化させることにより,荷電粒子ビー
ムの竃を調整丁さこともできる。By completely changing the shape of the casing and aperture, it is also possible to adjust the size of the charged particle beam.
以下、この発明の−実鬼例紫区について説明fる。 Hereinafter, the real demon example of this invention will be explained.
第1図にこJ)発明の一ス施−1−示す荷竃粒子ビーム
の形状優形用アバチャーの$+視図である,区にPいて
、” + 2’l’tχ万向の荷電粒子ビームの一部k
!断しビーム形状を整形する濾断板41 , .61は
y方向の憬断板,(31ぱ偕断仮ill . .21金
χ万向に−J動とするための支持紬、161はsl!l
r4,
板41 , 161全y万向にcJJwJとするための
支持軸である。Fig. 1 is a $+ perspective view of the aperture for shaping the shape of the particle beam shown in the first step of the invention. part of particle beam k
! Filter cutting plates 41 for shaping the cutting beam shape. 61 is a cutting board in the y direction, (31 is a temporary cutting ill.
r4, plate 41, 161 This is a support shaft for cJJwJ in all directions.
上記のように構威された荷電粒子ビーム形状整形用アパ
チャーは,X方向慕断板出.;!1が支持軸131 i
c沿って移動し,y方向繞断板i41 , f51が支
持軸{6)に沿って移動する。The charged particle beam shaping aperture configured as described above has a cross section in the X direction. ;! 1 is the support shaft 131i
c, and the y-direction cross-section plates i41 and f51 move along the support axis {6).
以上のようにこの発明VC工れd荷竃粒子ビームの形状
整形用アバチャーの開口間14e任意に設定できるよう
にしたのでアバチャーの長4命化金計ることができ,1
た開口間隔全調整することにより荷電粒子ビームの量1
k:8IiI1iすることかでさる。As described above, in this invention, since the aperture distance 14e of the aperture for shaping the shape of the VC processing particle beam can be set arbitrarily, the length of the aperture can be increased to 4 times.
By fully adjusting the aperture spacing, the amount of charged particle beam can be reduced by 1.
k: 8IiI1i?
i1図はこの発明の一実施列を示す荷電粒子ビームの形
状gl形用アパチャーの斜視図,第2図#:t従米の荷
竃粒子ビームの形状整形用アバチャー金示す斜視図、第
8図に第2図の田−mlに釦けるrT面図である。
図に1いて、+1+ , ;!lぼχ方向き断仮、’4
1 , 161ぱy方向遮断板,
31はχ
方向支持紬、
6)はy方
向支持軸金示す〇Figure i1 is a perspective view of an aperture for shaping a charged particle beam according to one embodiment of the present invention, and Figure 2 is a perspective view of an aperture for shaping a charged particle beam according to the present invention. FIG. 2 is a rT plane view showing the button ML in FIG. 2; 1 in the figure, +1+, ;! Temporary cutting in the lboχ direction, '4
1, 161 shows the y-direction blocking plate, 31 shows the χ-direction support pongee, 6) shows the y-direction support shaft 〇
Claims (1)
ビームの形状を整形するアパチャーの開口径を可変でき
る機構を備えたことを特徴とする荷電粒子ビームの形状
整形用アパチャー。An aperture for shaping a charged particle beam, characterized in that the device extracts charged particles using an electric field, and is equipped with a mechanism that can vary the aperture diameter of the aperture for shaping the shape of the charged particle beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP474590A JPH03209200A (en) | 1990-01-11 | 1990-01-11 | Aperture for shaping shape of charged particle beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP474590A JPH03209200A (en) | 1990-01-11 | 1990-01-11 | Aperture for shaping shape of charged particle beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03209200A true JPH03209200A (en) | 1991-09-12 |
Family
ID=11592452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP474590A Pending JPH03209200A (en) | 1990-01-11 | 1990-01-11 | Aperture for shaping shape of charged particle beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03209200A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007125726A1 (en) * | 2006-04-28 | 2007-11-08 | University Of Yamanashi | Method and apparatus for ionization by cluster ion impact which can realize imaging, and etching method and apparatus |
-
1990
- 1990-01-11 JP JP474590A patent/JPH03209200A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007125726A1 (en) * | 2006-04-28 | 2007-11-08 | University Of Yamanashi | Method and apparatus for ionization by cluster ion impact which can realize imaging, and etching method and apparatus |
JPWO2007125726A1 (en) * | 2006-04-28 | 2009-09-10 | 国立大学法人山梨大学 | Ionization method and apparatus by cluster ion bombardment capable of imaging, and etching method and apparatus |
JP4639341B2 (en) * | 2006-04-28 | 2011-02-23 | 国立大学法人山梨大学 | Etching method by cluster ion bombardment and mass spectrometric method using the same |
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