JPH03204949A - Bonding of ic chip - Google Patents

Bonding of ic chip

Info

Publication number
JPH03204949A
JPH03204949A JP34419189A JP34419189A JPH03204949A JP H03204949 A JPH03204949 A JP H03204949A JP 34419189 A JP34419189 A JP 34419189A JP 34419189 A JP34419189 A JP 34419189A JP H03204949 A JPH03204949 A JP H03204949A
Authority
JP
Japan
Prior art keywords
chip
thermocompression bonding
thermocompression
bonding
parallelism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34419189A
Other languages
Japanese (ja)
Inventor
Mitsuyoshi Matsumura
松村 光芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP34419189A priority Critical patent/JPH03204949A/en
Publication of JPH03204949A publication Critical patent/JPH03204949A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable the parallelism of an IC chip to a thermocompression bonding face to be easily adjusted in a short time by a method wherein the bonding face of a thermocompression bonding head is pressed against the upside of a swingable chip stage table, and the upside of the chip stage is adjusted in position to be substantially parallel with the bonding face of the thermocompression head. CONSTITUTION:An IC chip 7 is placed on the upside of a chip stage table 6, a tape carrier 12 is arranged thereon, the IC chip 7 is inserted into an opening 16 of the tape carrier 12, and finger leads 13 are positioned to bumps 15 respectively. When gas is introduced into a cavity 9 through an intake path 5 of a stage base 1 to make the pressure of the cavity 9 equal to an atmospheric pressure, the chip stage table 6 can be made swingable in an optional direction in a mounting recess 2. In this state, a thermocompression bonding head 11 of a bonding device is made to descend, and a thermocompression bonding face 14 is pressed against the IC chip 7 through the intermediary of the finger leads 13. The chip stage table 6 is made to swing in the mounting recess 2 so as to align with the plane of the thermocompression bonding face 14. In result, the upside of the chip stage table 6 is adjusted in parallelism to the thermocompression bonding face 14 so as to enable the bonding face 14 to bear uniformly against the bumps 15 of the IC chip 7.

Description

【発明の詳細な説明】 [産業上の利用分野J この発明はICチップのボンディング方法に関する。[Detailed description of the invention] [Industrial Application Field J The present invention relates to an IC chip bonding method.

[従来の技術] 従来、ICチップの実装技術においては、ICチップを
テープキャリアに搭載する方法として、TAB(丁ap
e Automated Bonding)方式が知ら
れている。このTAB方式では、まず、テープキャリア
に銅等の金属箔よりなる多数のフィンガリードをパター
ン形成して、フィンガリードの表面に半田メツキを施す
、この後、テープキャリアをチップステージ台上に載置
されたICチップ上に移動させ、ICチップ上に設けら
れた多数のバンプ上に各2インガリードを対応させて配
置する。この状態で、テープキャリアの上方よりボンデ
ィング装置に上下動可能に取り付けられた熱圧着ヘッド
を降下させ、その熱圧着面で各フィンガリードを一度に
加熱および加圧してICチップの各バンプにボンディン
グしている。
[Conventional technology] Conventionally, in IC chip mounting technology, TAB (tape carrier) is used as a method for mounting an IC chip on a tape carrier.
e Automated Bonding) method is known. In this TAB method, first, a large number of finger leads made of metal foil such as copper are patterned on a tape carrier, and the surfaces of the finger leads are soldered.Then, the tape carrier is placed on a chip stage table. 2 Inga leads are placed on a large number of bumps provided on the IC chip in correspondence with each other. In this state, the thermocompression bonding head attached to the bonding device so as to be movable up and down is lowered from above the tape carrier, and each finger lead is heated and pressurized at once with the thermocompression bonding surface to bond each finger lead to each bump of the IC chip. ing.

[発明が解決しようとする課題J 上述したICチップのボンディング方法では、ICチッ
プのバンプ面と熱圧着ヘッドの熱圧着面とが平行でない
と、熱圧着面がICチップに片当りし、ICチップの各
バンプと各フィンガリードとを確実にボンディングする
ことができないため、ICチップのバンプ面と熱圧着ヘ
ッドの熱圧着面との平行度を調整する必要がある。
[Problem to be Solved by the Invention J] In the above-described IC chip bonding method, if the bump surface of the IC chip and the thermocompression bonding surface of the thermocompression bonding head are not parallel, the thermocompression bonding surface will hit the IC chip unevenly, and the IC chip will be damaged. Since each bump and each finger lead cannot be reliably bonded, it is necessary to adjust the parallelism between the bump surface of the IC chip and the thermocompression bonding surface of the thermocompression bonding head.

この調整方法としては、例えば熱圧着ヘッドがボンディ
ング装置に取り付けられる部分を調整して熱圧着面とチ
ップステージ台の上面との平行度を調整する方法、また
は熱圧着へラドの熱圧着面を研磨可能な材料で構成し、
この熱圧着面を研磨して熱圧着面とチップステージ台の
上面との平行度を調整する方法等がある。
This adjustment method includes, for example, adjusting the part where the thermocompression bonding head is attached to the bonding device to adjust the parallelism between the thermocompression bonding surface and the top surface of the chip stage table, or polishing the thermocompression bonding surface of the thermocompression bonding head. Constructed from possible materials,
There is a method of polishing this thermocompression bonding surface to adjust the parallelism between the thermocompression bonding surface and the top surface of the chip stage table.

しかし、前者の方法ではボンディング装置に熱圧着ヘッ
ドが取り付けられる部分を機械的に調整しなければなら
ないため、熱圧着面とチップステージ台の上面との平行
度を調整するすることかが難しく、調整作業に熟練を要
し1作業時間がかかるという問題がある。また、後者の
方法ではICチップを載置するチップステージ台上に研
磨板を乗せて、熱圧着ヘッドの熱圧着面を研磨して平行
度を調整しなければならないため、研磨作業が面倒で、
作業時間がかかるばかりか、熱圧着ヘッドが研磨可能な
材料で形成されているので、熱圧着ヘッドが早く摩耗す
るという問題がある。
However, in the former method, the part where the thermocompression bonding head is attached to the bonding device must be mechanically adjusted, making it difficult to adjust the parallelism between the thermocompression bonding surface and the top surface of the chip stage table. There is a problem in that the work requires skill and takes a long time. In addition, in the latter method, it is necessary to place a polishing plate on the chip stage table on which the IC chip is placed and polish the thermocompression bonding surface of the thermocompression bonding head to adjust the parallelism, which makes the polishing work troublesome.
Not only is the process time-consuming, but since the thermocompression head is made of a polishable material, there is a problem in that the thermocompression head wears out quickly.

この発明の目的は、熟練者を必要とせず、短時間で簡単
にICチップと熱圧着面の平行度を調整でき、確実にか
つ精度よ<ICチップとフィンガリードとをボンディン
グすることのできるICチップのボンディング方法を提
供することである。
The object of the present invention is to provide an IC that can easily adjust the parallelism of an IC chip and a thermocompression bonding surface in a short time without requiring a skilled person, and that can bond an IC chip and a finger lead reliably and accurately. An object of the present invention is to provide a method for bonding chips.

[課題を解決するための手段] この発明は上述した目的を達成するために、ボンディン
グ装置に上下動可能に取り付けられた熱圧着ヘッドを降
下して、その熱圧着面を揺動可能なチップステージ台の
上面に、直接またはチップステージ台に載置されたIC
チップや表裏面が平行なgl!1m具を介して押し付け
、#記チップステージ台の上面を前記熱圧着ヘッドの熱
圧着面と実質的に平行となる位置に調整した上、前記チ
ップステージ台上に載置されたICチップとフィンガリ
ードとをボンディングすることである。この場合、熱圧
着ヘッドの熱圧着面とチー7プステージ台の上面との平
行度の調整は、XCチップとフィンガリードとをボンデ
ィングするごとに毎回行なってもよく、また少なくとも
熱圧着ヘッドで所定回数のボンディングを行なった後、
熱圧着ヘッドの熱圧着面を研磨するごとに行なうように
してもよい。
[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention provides a chip stage that is capable of lowering a thermocompression head attached to a bonding device so as to be movable up and down, and swinging the thermocompression bonding surface. IC placed directly on the top surface of the stand or on the chip stage stand
GL with parallel chips and front and back surfaces! After adjusting the top surface of the # chip stage base to a position where it is substantially parallel to the thermocompression bonding surface of the thermocompression bonding head, the IC chip and fingers placed on the chip stage base are pressed together using a 1 m tool. This is to bond with the lead. In this case, the parallelism between the thermocompression bonding surface of the thermocompression bonding head and the top surface of the cheap stage table may be adjusted every time the XC chip and the finger leads are bonded. After bonding a number of times,
The polishing may be performed every time the thermocompression bonding surface of the thermocompression bonding head is polished.

[作用j この発明の作用は次の通りである。[effect j The operation of this invention is as follows.

ICチップをフィンガリードにボンディングする際には
、まず、ボンディング装置の熱圧着ヘッドを降下して、
加熱しない状態で、その熱圧着面をチップステージ台の
上面に、直接またはICチップや表裏面が平行な調整治
具を介して押し付ける。すると、チップステージ台It
熱圧着面に押されて熱圧着面と対応するように揺動する
ので、チップステージ台の上面が熱圧着ヘッドの熱圧着
面に対して実質的に平行となる位置に調整される。この
後、チップステージ台上に載置されたICチップとフィ
ンガリードとを熱圧着ヘッドの熱圧着面で加熱しながら
加圧して熱ボンディングするので、熱圧着面がICチッ
プに片当すせずに。
When bonding an IC chip to a finger lead, first lower the thermocompression head of the bonding device,
Without heating, the thermocompression bonded surface is pressed onto the top surface of the chip stage table directly or via an IC chip or an adjustment jig whose front and back surfaces are parallel. Then, the chip stage
Since it is pushed by the thermocompression bonding surface and swings in correspondence with the thermocompression bonding surface, the upper surface of the chip stage base is adjusted to a position where it is substantially parallel to the thermocompression bonding surface of the thermocompression bonding head. After this, the IC chip placed on the chip stage and the finger leads are heated and pressed with the thermocompression bonding surface of the thermocompression bonding head to perform thermal bonding, so that the thermocompression bonding surface does not touch the IC chip unevenly. To.

正確にかつ精度よくボンディングを行なうことができる
Bonding can be performed accurately and precisely.

[実施例J 以下1図面を参照して、この発明の詳細な説明する。[Example J The present invention will be described in detail below with reference to one drawing.

!1図はこの発明のボンディング方法に適したボンディ
ング装置によりICチップをフィンガリードにボンディ
ングする第1実施例を示す、まず、ボンディング装置に
ついて説明する0図中、lはステージ基台である。この
ステージ基台lは機械的強度の高い材料よりなる。その
上面中央には#、!!四部2が設けられているとともに
、中央部分には吸気路3と排気路4が載置凹部2の底面
からステージ基台1の下面に貫通して設けられている。
! FIG. 1 shows a first embodiment of bonding an IC chip to a finger lead using a bonding device suitable for the bonding method of the present invention. First, in FIG. This stage base l is made of a material with high mechanical strength. In the center of the top is #,! ! Four parts 2 are provided, and an intake passage 3 and an exhaust passage 4 are provided in the central part so as to penetrate from the bottom surface of the mounting recess 2 to the lower surface of the stage base 1.

載置凹部2は全体が円形状をなし、内部周壁面5が下側
から上側に向かうに従って次第に広がる凹部状の球曲面
に形成されている。また、載置凹部2にはチップステー
ジ台6が配置されている。チップステージ台6はICチ
ップ7を載置する部分であり、ステージ基台lと同じ材
料よりなり、円盤状に形成されている。その上面は平坦
度の高い平面に形成されており、下部周縁部8は載置凹
部2の内部周壁面5に線接触により密接する凸状の球曲
面に形成されている。これにより、チップステージ台6
の下部とステージ基台1の載置凹部2との間には空間部
9が形成される。
The mounting recess 2 has a circular shape as a whole, and the inner peripheral wall surface 5 is formed into a recessed spherical curved surface that gradually widens from the bottom to the top. Further, a chip stage base 6 is arranged in the mounting recess 2. The chip stage base 6 is a portion on which the IC chip 7 is placed, is made of the same material as the stage base l, and is formed into a disk shape. Its upper surface is formed into a highly flat plane, and the lower peripheral edge portion 8 is formed into a convex spherical curved surface that closely contacts the inner peripheral wall surface 5 of the placement recess 2 through line contact. As a result, the chip stage base 6
A space 9 is formed between the lower part of the stage base 1 and the mounting recess 2 of the stage base 1.

したがって、チップステージ台6は、空間IIA9内に
吸気路3がら空気等の気体が導入されて、空間部9内の
気圧が大気圧と同等もしくはそれ以上になると、載置口
1IAZ内において任意の方向に揺動可能となる。逆に
、吸気路3を閉塞して排気路4がら空間部9内の気体が
排出され、空間部9内が真空状態に近い負圧状態になる
と、チップステージ台6は載置凹部2に固定される。な
お、チップステージ台6の下面には空間部9を大きくし
て負圧を高めるための凹部10が設けられている。
Therefore, when a gas such as air is introduced into the space IIA9 from the air intake path 3 and the pressure within the space 9 becomes equal to or higher than atmospheric pressure, the chip stage base 6 can be operated at any position within the mounting port 1IAZ. It becomes possible to swing in the direction. Conversely, when the air intake path 3 is closed and the gas in the space 9 is discharged through the exhaust path 4, and the inside of the space 9 becomes a negative pressure state close to a vacuum state, the chip stage table 6 is fixed to the mounting recess 2. be done. Note that a recess 10 is provided on the lower surface of the chip stage base 6 to enlarge the space 9 and increase negative pressure.

一方、チップステージ台6の上方には熱圧着へラド11
が配置されている。熱圧着ヘッド11はチップステージ
台6上においてICチップ7に後述するテープキャリア
12の各フィンガリード13・・・を加熱し加圧するも
のであり、下端面がチップステージ台6の上面と同様、
平坦度の高い熱圧着面14に形成されている。なお、熱
圧着ヘッド11はボンディング装置の可動アーム(図示
せず)に取り付けられ、この可動アームにより上下動可
能となっている。
On the other hand, above the chip stage base 6 is a thermocompression bonding pad 11.
is located. The thermocompression bonding head 11 heats and presses each finger lead 13 of the tape carrier 12, which will be described later, on the IC chip 7 on the chip stage table 6, and its lower end surface is similar to the upper surface of the chip stage table 6.
It is formed on a thermocompression bonding surface 14 with high flatness. Note that the thermocompression bonding head 11 is attached to a movable arm (not shown) of a bonding device, and can be moved up and down by this movable arm.

ところで、ICチップ7は四角い板片状に形成されてお
り、その上面には多数のバンプ15・・・が上方へ突出
して設けられている。また、テープキャリア12には所
定箇所にICチップ7が挿入する開口部16が形成され
ており、その上面にはICチップ7の各バンプ15・・
・と対応する多数のフィンガリード13・・・が開口部
16の縁から内部に突出してパターン形成されている。
By the way, the IC chip 7 is formed in the shape of a square plate, and a large number of bumps 15 are provided on the upper surface of the IC chip 7 so as to protrude upward. Further, an opening 16 into which the IC chip 7 is inserted is formed at a predetermined location in the tape carrier 12, and each bump 15 of the IC chip 7 is formed on the upper surface of the opening 16.
A large number of finger leads 13 corresponding to . . . are patterned so as to protrude inward from the edge of the opening 16.

なお、各フィンガリード13・・・の表面には半田メツ
キ(図示せず)が施されている。
Note that solder plating (not shown) is applied to the surface of each finger lead 13.

次に、上述したボンディング装置によりICチップ7に
フィンガリード13をボンディングする場合について説
明する。
Next, a case will be described in which the finger leads 13 are bonded to the IC chip 7 using the above-described bonding apparatus.

まず、チップステージ台6の上面と熱圧着ヘッド11の
熱圧着面14との平行度を調整する。この場合には、予
め、チー2プステージ台6の上面にICチップ7を載置
し、このICチップ7上にテープキャリア12を配置し
て、テープキャリア12の開口部16内にICチップ7
を挿入させ、かつICチップ7の各バンプ15・・・に
フィンガリード13・・・を対応させる。そして、ステ
ージ基台lの吸気路3がら空間部9内に気体を導入して
空間部9内の気圧を大気圧と同等の状態にする。
First, the parallelism between the upper surface of the chip stage base 6 and the thermocompression bonding surface 14 of the thermocompression bonding head 11 is adjusted. In this case, the IC chip 7 is placed on the upper surface of the cheap stage 6 in advance, the tape carrier 12 is placed on the IC chip 7, and the IC chip 7 is placed in the opening 16 of the tape carrier 12.
are inserted, and the finger leads 13 are made to correspond to each bump 15 of the IC chip 7. Then, gas is introduced into the space 9 through the air intake path 3 of the stage base l to bring the pressure inside the space 9 to a state equivalent to atmospheric pressure.

すると、チップステージ台6はその下部周縁部8が載置
凹部2の内部周壁面5に線接触で密接した状態であるか
ら、載置凹部2内において任意の方向に揺動可能となる
。この状態で、ボンディング装置の熱圧着へラド11を
降下させて、熱圧着ヘッド11の熱圧着面14をフィン
ガリードエ3・・・を介してICチップ7に押し付ける
。このときには、熱圧着ヘッド11のヒータ(図示せず
)をオフにして、熱圧着へラド11による加熱は行なわ
ないようにする。すると、チップステージ台6は載置凹
部2内において任意の方向に揺動可能な状態であるから
、熱圧着面14の平面と対応するように載置凹部2内で
揺動する。この結果、チップステージ台6の上面はIC
チップ7の各バンプ15・・・に熱圧着面14が均等に
当たるように熱圧着面14に対する平行度が調整される
。この後、ステージ基台lの吸気路3を閉じて排気路4
がら空間部9内の気体を排出して空間部9内を真空に近
い負圧状態にすると、チップステージ台6は載置凹部2
に固定される。これにより、チップステージ台6の上面
と熱圧着へラド11の熱圧着面14とは、熟練者を必要
とせず、短時間で簡単に平行度が調整される。
Then, since the lower peripheral edge 8 of the chip stage base 6 is in close line contact with the inner circumferential wall surface 5 of the mounting recess 2, it becomes possible to swing in any direction within the mounting recess 2. In this state, the RAD 11 is lowered to the thermocompression bonding unit of the bonding apparatus, and the thermocompression bonding surface 14 of the thermocompression bonding head 11 is pressed against the IC chip 7 via the finger doors 3 . At this time, the heater (not shown) of the thermocompression bonding head 11 is turned off so that the heating by the rad 11 is not performed on the thermocompression bonding. Then, since the chip stage base 6 is in a state where it can swing in any direction within the mounting recess 2, it swings within the mounting recess 2 so as to correspond to the plane of the thermocompression bonding surface 14. As a result, the top surface of the chip stage base 6 is
The parallelism to the thermocompression bonding surface 14 is adjusted so that the thermocompression bonding surface 14 evenly contacts each bump 15 of the chip 7. After this, the intake passage 3 of the stage base l is closed and the exhaust passage 4 is closed.
When the gas inside the space 9 is exhausted and the inside of the space 9 is brought into a negative pressure state close to vacuum, the chip stage table 6 is moved to the mounting recess 2.
Fixed. Thereby, the parallelism between the upper surface of the chip stage base 6 and the thermocompression bonding surface 14 of the thermocompression bonding pad 11 can be easily adjusted in a short time without requiring a skilled person.

この状態で、−旦、熱圧着ヘッド11を上昇させた後、
再び、熱圧着へラド11を降下させて熱圧漏血14でフ
ィンガリード13・・・をバンプ15・・・に押し付け
る。このときには、熱圧着へラド11のヒータをオンに
して加熱しながら加圧する。すると、チップステージ台
6の上面と熱圧着ヘッド11の熱圧着面14とは平行度
が調整されているので、熱圧着面14がICチップ7に
片当りすることなく、確実にかつ精度よくフィンガリー
ド13・・・とバンプ15・・・とをボンディングする
ことができる。
In this state, after raising the thermocompression bonding head 11,
The rad 11 is lowered to the thermocompression bonding again, and the finger leads 13 are pressed against the bumps 15 by the thermocompression leakage 14. At this time, the heater of the rad 11 is turned on to heat and pressurize the thermocompression bonding. Then, since the parallelism between the upper surface of the chip stage base 6 and the thermocompression bonding surface 14 of the thermocompression bonding head 11 is adjusted, the thermocompression bonding surface 14 does not hit the IC chip 7 unevenly, and the fingers are reliably and precisely attached. Leads 13... and bumps 15... can be bonded.

ところで、上述した熱圧着へラド11の熱圧着面14と
チップステージ台6の上面との平行度の調整は、ICチ
ップ7とフィンガリード13とをボンディングするごと
に調整すれば、ICチップ7ごとのバラツキを吸収でき
、極めて精度よくボンディングすることができるが、能
率的でないため、通常は数千回に一程度度行なえばよい
、実際には、50回程度ボンディングを繰り返すと、熱
圧着ヘッド11の熱圧着面14に半田等が付着してボン
ディングを妨げるので、50回に一回程度、熱圧着面1
4を研磨して表面から半田等を除去する必要があり、こ
のときに平行度の調整を行なえばよい。
By the way, the above-mentioned adjustment of the parallelism between the thermocompression bonding surface 14 of the thermocompression bonding pad 11 and the top surface of the chip stage base 6 can be adjusted every time the IC chip 7 and the finger leads 13 are bonded. It is possible to absorb variations in the bonding temperature and perform bonding with extremely high precision. However, it is not efficient, so it is usually only necessary to perform bonding once every several thousand times. In reality, if bonding is repeated about 50 times, Since solder etc. adheres to the thermocompression bonding surface 14 of the thermocompression bonding surface 14 and prevents bonding, the thermocompression bonding surface 1
It is necessary to remove solder etc. from the surface by polishing 4, and the parallelism may be adjusted at this time.

第2図は上述したICチップ7に換えて平行度調整治具
17を用いて、チップステージ台6の上面と熱圧着ヘッ
ド11の熱圧着画工4との平行度を調整する第2実施例
を示す、平行度調整治具17はICチップ7の標準サイ
ズと同じ形状に形成されたものであり、本体部18の上
面にバンプ部19が設けられている。この平行度調整治
具17を用いて平行度を調整する場合には、まず、チッ
プステージ台6を載置凹部2に揺動可能に配置した状態
で、チップステージ台6上に平行度調整治具17を載置
し、前述した実施例と同様に、熱圧着へラド11を降下
させて熱圧着面14を平行度調整治具17のバンプ部1
9上に押し付ければ、チー2プステージ台6が載置口!
12内で揺動して、チップステージ台6の上面と熱圧着
ヘッド11の熱圧着面14との平行度が調整される。な
お、調整後は、チップステージ台6を載置凹部2に固定
し、平行度調整治具17を取り除けば、前述と同様にボ
ンディングを行なうことができる。
FIG. 2 shows a second embodiment in which the parallelism between the upper surface of the chip stage 6 and the thermocompression bonding tool 4 of the thermocompression bonding head 11 is adjusted by using a parallelism adjustment jig 17 instead of the above-mentioned IC chip 7. The parallelism adjustment jig 17 shown is formed in the same shape as the standard size of the IC chip 7, and a bump portion 19 is provided on the upper surface of the main body portion 18. When adjusting the parallelism using this parallelism adjustment jig 17, first, with the chip stage base 6 swingably arranged in the mounting recess 2, place the parallelism adjustment jig on the chip stage base 6. The tool 17 is placed, and as in the embodiment described above, the Rad 11 is lowered to the thermocompression bonding surface 14 so that the bump portion 1 of the parallelism adjustment jig 17 is lowered.
If you press it on top of 9, the Cheap Stage 6 will become the loading port!
12 to adjust the parallelism between the upper surface of the chip stage base 6 and the thermocompression bonding surface 14 of the thermocompression bonding head 11. After the adjustment, bonding can be performed in the same manner as described above by fixing the chip stage base 6 in the mounting recess 2 and removing the parallelism adjustment jig 17.

この調整方法では、平行度調整治具エフがICチップ7
の標準サイズで形成されているので、常に一定の状態に
調整できる。そのため、数千回に一回程度調整するだけ
で、ICチップ7の製造バラツキに左右されず、常に安
定したボンディングができる。なお、平行度調整治具1
7は必ずしもICチップ7と同じ形状のものである必要
はなく、表裏面が平行なプレート等であってもよい。
In this adjustment method, the parallelism adjustment jig F is
Since it is formed in a standard size, it can always be adjusted to a constant state. Therefore, stable bonding can be achieved at all times without being affected by manufacturing variations in the IC chips 7 by making adjustments only once every several thousand times. In addition, parallelism adjustment jig 1
7 does not necessarily have to have the same shape as the IC chip 7, and may be a plate or the like whose front and back surfaces are parallel.

第3図は熱圧着ヘッド11の熱圧着面14を直接チップ
ステージ台6の上面に押し当てて平行度を調整するWs
3実施例を示す、この場合には、チップステージ台6を
載置凹部2に揺動可能に配置した状態で、チップステー
ジ台6の上面に直接熱圧着面14を押し付けるだけで、
上述と同様に、チップステージ台6の上面と熱圧着面1
4との平行度を調整することができるので、能率よく調
整を行なうことができる。なお、この場合には、熱圧着
面14とチップステージ台6の上面とが面接触であるた
め、これを避けるために、上述した平行度調整治具17
またはバンプ部19に相当する突起部のみをチップステ
ージ台6の上面に接着剤等で固定し、上述と同様に平行
度を調整するようにしてもよい。
Figure 3 shows Ws in which the thermocompression bonding surface 14 of the thermocompression bonding head 11 is pressed directly against the top surface of the chip stage base 6 to adjust the parallelism.
Embodiment 3 is shown. In this case, with the chip stage base 6 swingably arranged in the mounting recess 2, the thermocompression bonding surface 14 is simply pressed directly onto the top surface of the chip stage base 6.
Similarly to the above, the upper surface of the chip stage base 6 and the thermocompression bonding surface 1
Since the parallelism with 4 can be adjusted, the adjustment can be made efficiently. In this case, since the thermocompression bonding surface 14 and the top surface of the chip stage base 6 are in surface contact, in order to avoid this, the above-mentioned parallelism adjustment jig 17 is used.
Alternatively, only the protrusion portion corresponding to the bump portion 19 may be fixed to the upper surface of the chip stage base 6 with an adhesive or the like, and the parallelism may be adjusted in the same manner as described above.

なお、この発明のICチップのボンディング方法は、T
AB方式に限らず、フェースダウンボンディングにも適
用できるもので、この場合には、上述の如く熱圧着へラ
ド11の熱圧着面14と平行に調整したチップステージ
台6の上面に基板を載置し、この基板上にICチップを
、その電極を基板側に向けて搭載してボンディングすれ
ばよい。
Note that the IC chip bonding method of this invention is based on T.
It can be applied not only to the AB method but also to face-down bonding. In this case, the substrate is placed on the top surface of the chip stage 6 which is adjusted parallel to the thermocompression bonding surface 14 of the thermocompression bonding pad 11 as described above. Then, an IC chip may be mounted on this substrate with its electrodes facing the substrate side and bonded.

[発明の効果] 以上詳細に説明したように、この発明によれば、熱圧着
ヘッドを降下させて、その熱圧着面を揺動可能なチップ
ステージ台の上面に、直接またはチップステージ台に載
置されたICチップや表裏面が平行なプレートを介して
押し付け、前記チップステージ台の上面を前記熱圧着ヘ
ッドの熱圧着面と実質的に平行となる位置に調整するの
で、熟練者を必要とせず、短時間で簡単にICチップと
熱圧着面との平行度を調整することができ、この後、前
記チップステージ台上に載置されたICチップとフィン
ガリードとをボンディングするので、熱圧着面がICチ
ップに片当すせずに、確実にかつ精度よ<ICチップと
フィンガリードとをボンディングすることができる。
[Effects of the Invention] As described in detail above, according to the present invention, the thermocompression bonding head is lowered and the thermocompression bonding surface is placed directly or on the top surface of the swingable chip stage table. The placed IC chip is pressed through a plate whose front and back surfaces are parallel, and the upper surface of the chip stage table is adjusted to a position where it is substantially parallel to the thermocompression bonding surface of the thermocompression bonding head, so a skilled person is not required. First, the parallelism between the IC chip and the thermocompression bonding surface can be easily adjusted in a short time, and then the IC chip placed on the chip stage table and the finger leads are bonded. The IC chip and the finger leads can be bonded reliably and accurately without the surface touching the IC chip unevenly.

【図面の簡単な説明】[Brief explanation of drawings]

!$1図はこの発明のボンディング方法に適したボンデ
ィング装置によりICチップをフィンガリードにボンデ
ィングする第1実施例の要部断面図、第2図は第2実施
例の断面図、第3図は第3実施例の断面図である。 1・・・・・・ステージ基台、6・・・・・・チップス
テージ台、7・・・・・・ICチップ、11・・・・・
・熱圧着ヘッド、13・・・・・・フィンガリード、1
4・・・・・・熱圧着面、17・・・・・・平行度調整
治具。
! Figure 1 is a sectional view of a main part of a first embodiment in which an IC chip is bonded to a finger lead using a bonding apparatus suitable for the bonding method of the present invention, FIG. 2 is a sectional view of a second embodiment, and FIG. FIG. 3 is a cross-sectional view of the third embodiment. 1...Stage base, 6...Chip stage base, 7...IC chip, 11...
・Thermocompression bonding head, 13...Finger lead, 1
4...Thermocompression bonding surface, 17...Parallelism adjustment jig.

Claims (3)

【特許請求の範囲】[Claims] (1)ボンディング装置に上下動可能に取り付けられた
熱圧着ヘッドを降下して、その熱圧着面を揺動可能なチ
ップステージ台の上面に、直接またはチップステージ台
に載置されたICチップや表裏面が平行な調整治具を介
して押し付け、前記チップステージ台の上面を前記熱圧
着ヘッドの熱圧着面と実質的に平行となる位置に調整し
た上、前記チップステージ台上に載置されたICチップ
とフィンガリードとをボンディングすることを特徴とす
るICチップのボンディング方法。
(1) The thermocompression bonding head attached to the bonding device so as to be movable up and down is lowered, and the thermocompression bonding surface is placed on the top surface of the swingable chip stage base directly or on the IC chips mounted on the chip stage base. The top surface of the chip stage base is adjusted to a position substantially parallel to the thermocompression bonding surface of the thermocompression bonding head by pressing through an adjustment jig whose front and back surfaces are parallel, and then placed on the chip stage base. An IC chip bonding method characterized by bonding an IC chip and finger leads.
(2)請求項第1項において、前記熱圧着ヘッドの熱圧
着面と前記チップステージ台の上面との平行度の調整は
、前記ICチップと前記フィンガリードとをボンディン
グするごとに毎回行なうことを特徴とするICチップの
ボンディング方法。
(2) In claim 1, the parallelism between the thermocompression bonding surface of the thermocompression bonding head and the top surface of the chip stage table is adjusted every time the IC chip and the finger leads are bonded. Features of IC chip bonding method.
(3)請求項第1項において、前記熱圧着ヘッドの熱圧
着面と前記チップステージ台の上面との平行度の調整は
、少なくとも前記熱圧着ヘッドによりボンディングを所
定回数行なって、前記熱圧着ヘッドの熱圧着面を研磨す
る都度行なうことを特徴とするICチップのボンディン
グ方法。
(3) In claim 1, the parallelism between the thermocompression bonding surface of the thermocompression bonding head and the top surface of the chip stage table is adjusted by performing bonding at least a predetermined number of times using the thermocompression bonding head, and An IC chip bonding method characterized in that the bonding method is performed each time the thermocompression bonding surface of the IC chip is polished.
JP34419189A 1989-12-29 1989-12-29 Bonding of ic chip Pending JPH03204949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34419189A JPH03204949A (en) 1989-12-29 1989-12-29 Bonding of ic chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34419189A JPH03204949A (en) 1989-12-29 1989-12-29 Bonding of ic chip

Publications (1)

Publication Number Publication Date
JPH03204949A true JPH03204949A (en) 1991-09-06

Family

ID=18367336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34419189A Pending JPH03204949A (en) 1989-12-29 1989-12-29 Bonding of ic chip

Country Status (1)

Country Link
JP (1) JPH03204949A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6561408B2 (en) * 2001-01-17 2003-05-13 Matsushita Electric Industrial Co., Ltd. Bonding head and component mounting apparatus
US20160099225A1 (en) * 2014-04-30 2016-04-07 Fasford Technology Co., Ltd. Die Bonder and Bonding Method
CN111752314A (en) * 2019-03-29 2020-10-09 上海微电子装备(集团)股份有限公司 Bonding head pressure control device and control method and bonding equipment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6561408B2 (en) * 2001-01-17 2003-05-13 Matsushita Electric Industrial Co., Ltd. Bonding head and component mounting apparatus
US20160099225A1 (en) * 2014-04-30 2016-04-07 Fasford Technology Co., Ltd. Die Bonder and Bonding Method
US9530751B2 (en) * 2014-04-30 2016-12-27 Fasford Technology Co., Ltd. Die bonder and bonding method
CN111752314A (en) * 2019-03-29 2020-10-09 上海微电子装备(集团)股份有限公司 Bonding head pressure control device and control method and bonding equipment
CN111752314B (en) * 2019-03-29 2021-10-01 上海微电子装备(集团)股份有限公司 Bonding head pressure control device and control method and bonding equipment

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