JPH03204012A - Dropper type constant voltage circuit - Google Patents
Dropper type constant voltage circuitInfo
- Publication number
- JPH03204012A JPH03204012A JP1343995A JP34399589A JPH03204012A JP H03204012 A JPH03204012 A JP H03204012A JP 1343995 A JP1343995 A JP 1343995A JP 34399589 A JP34399589 A JP 34399589A JP H03204012 A JPH03204012 A JP H03204012A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- voltage
- output
- constant voltage
- type constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Dram (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
【発明の詳細な説明】 この弁明はドロッパ型定電圧回路に関するものである。[Detailed description of the invention] This defense concerns a dropper type constant voltage circuit.
従来この種の装置では、主トランジスタとしてＰヂャン
ネルＭＯ８−ＦＥＴが使われていたが。Conventionally, this type of device used a P channel MO8-FET as the main transistor.
同じ負荷電流を流すのにＰヂャンネル、〜１０Ｓ−ＦＥ
ＴはＮチャンネルＭ ＯＳ −Ｆ Ｅ Ｔと比べて約３
．１８のチップ面積を必要とし不利であった。そこで第
１図の様に主トランジスタとしてＮチセンネル、〜１Ｑ
ｓ〜ＦＥＴを用いたドロッパー型定電圧回路の場合、主
トランジスタ１を駆動するためには、入力電圧は、出力
電圧に、主トランジスタ１のスレッショルド電圧を加え
た］ａ以上の電圧を必Ｃとした。部ち、入出力間の電圧
差は主トランジスタ１のスレッショルド電圧以上にする
必要があった。P channel, ~10S-FE to flow the same load current
T is about 3 compared to N-channel MOS-FET.
．． This method required a chip area of 18, which was disadvantageous. Therefore, as shown in Figure 1, the main transistor is N-chisennel, ~1Q
In the case of a dropper type constant voltage circuit using s~FET, in order to drive the main transistor 1, the input voltage must be equal to or higher than the output voltage plus the threshold voltage of the main transistor 1]a. did. However, the voltage difference between the input and output must be greater than the threshold voltage of the main transistor 1.
本発明は上記欠点を解決する為、主トランジスタとして
Ｎ型ＭＯ８−ＦＥＴを用いたドロッパ型定電圧回路にお
いて、入出力電圧差が主トランジスタのスレッショルド
電圧以下でも動作するドロッパ型定電圧回路を捉洪する
ものである。In order to solve the above-mentioned drawbacks, the present invention provides a dropper type constant voltage circuit using an N-type MO8-FET as the main transistor, which operates even when the input/output voltage difference is less than the threshold voltage of the main transistor. It is something to do.
第２図は本発明の実施例であり、１は入力端子と出力端
子間にそれぞれドレイン端子とソース端子が接続された
Ｎ型Ｍ ＯＳ −Ｆ Ｅ Ｔである。２は増巾回路であ
り、その出力端子が主トランジスタ１のゲート端子に接
続され、一方の入力端子（＋）が基準電圧回路３の出力
端子に接続され、池の入力端子（−）が出力電圧を検出
するために出力端子間に直列に接続された抵抗４と抵抗
５の接続点に接続されている。６は入力電圧から昇圧さ
れた電圧を増幅回路２に供給するためのチャージポンプ
回路である。FIG. 2 shows an embodiment of the present invention, and 1 is an N-type MOS-FET with a drain terminal and a source terminal connected between an input terminal and an output terminal, respectively. 2 is an amplifier circuit whose output terminal is connected to the gate terminal of main transistor 1, one input terminal (+) is connected to the output terminal of reference voltage circuit 3, and the input terminal (-) of the amplifier circuit is connected to the output terminal of main transistor 1. It is connected to a connection point between a resistor 4 and a resistor 5, which are connected in series between the output terminals to detect voltage. 6 is a charge pump circuit for supplying the amplifier circuit 2 with a voltage boosted from the input voltage.
この回路の動作は入力電圧が印加されると、チャージポ
ンプ回路６が動作して、昇圧された電圧が増幅回路２に
供給され、該増巾回路２の出力電圧によって主トランジ
スタ１が駆動されて出力電圧が発生する。次に出力電圧
は抵抗４と抵抗５によって検出され、その接続点の電圧
が基準電圧回路３の出ツノ電圧より大ぎくなると、増幅
回路２は主トランジスタ１をオフするように働く。この
ようにして出力電圧は定電圧化される。The operation of this circuit is such that when an input voltage is applied, the charge pump circuit 6 operates, the boosted voltage is supplied to the amplifier circuit 2, and the main transistor 1 is driven by the output voltage of the amplifier circuit 2. Output voltage is generated. Next, the output voltage is detected by the resistors 4 and 5, and when the voltage at the connection point becomes larger than the output voltage of the reference voltage circuit 3, the amplifier circuit 2 operates to turn off the main transistor 1. In this way, the output voltage is made constant.
以上の説明からあきらかなように主トランジスタ１のＮ
チャンネル型ＭＯ８−ＦＥＴを駆動する増幅回路２は、
入力電圧より昇圧された電圧によってバイアスされてい
るので、入出力電圧差を小さくしても充分に主トランジ
スタを駆動することができる。As is clear from the above explanation, the N of main transistor 1
The amplifier circuit 2 that drives the channel type MO8-FET is
Since it is biased by a voltage boosted from the input voltage, the main transistor can be sufficiently driven even if the input/output voltage difference is small.
主トランジスタとしてＮ型ＭＯ８−ＦＥＴを用いたドロ
ッパ型定電圧回路において、入出力電圧差を小さくする
ことができ、主トランジスタでの消費電力が小さくなり
、その結果効宰が上がり発熱が小さくなるので小型化す
ることができる。In a dropper type constant voltage circuit using an N-type MO8-FET as the main transistor, the input/output voltage difference can be reduced, the power consumption in the main transistor is reduced, and as a result, efficiency is increased and heat generation is reduced. Can be made smaller.
４、図面１７） ｌ！！Ｉｉｎ ’； １２ ＷＪ第１
図は従来のドロッパ型定電圧の回路図、第２図は本弁明
のドロッパ望定電圧回路図である。4, Drawing 17) l! ! Iin'; 12 WJ 1st
The figure is a circuit diagram of a conventional dropper type constant voltage, and FIG. 2 is a circuit diagram of a dropper desired constant voltage according to the present invention.
１・・・主トランジスタ例えばＮチャンネル型ＭＯ８Ｆ
ＥＴ、２・・・増幅回路、３・・・基ｔ￥電圧回路、４
抵抗、５・・・抵抗、６・・・チャージポンプ回路であ
る。1... Main transistor, e.g. N-channel type MO8F
ET, 2... Amplification circuit, 3... Base t\voltage circuit, 4
Resistor, 5... Resistor, 6... Charge pump circuit.
Claims (1)
ル型ＭＯＳ−ＦＥＴのドレイン端子及びソース端子を接
続し、基準電圧と出力電圧を比較増巾する増巾回路によ
って前記ＦＥＴを駆動するドロッパ型定電圧回路に於い
て、前記増巾回路電源は前記入力端子間に設けたチャー
ジポンプ回路の出力より供給する事を特徴としたドロッ
パ型定電圧回路。The dropper type constant voltage circuit connects the drain terminal and source terminal of an N-channel type MOS-FET between the input and output terminals of a dropper type constant voltage circuit, and drives the FET by an amplifying circuit that compares and amplifies a reference voltage and an output voltage. In the voltage circuit, the dropper type constant voltage circuit is characterized in that the amplifying circuit power source is supplied from the output of a charge pump circuit provided between the input terminals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343995A JPH03204012A (en) | 1989-12-29 | 1989-12-29 | Dropper type constant voltage circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343995A JPH03204012A (en) | 1989-12-29 | 1989-12-29 | Dropper type constant voltage circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03204012A true JPH03204012A (en) | 1991-09-05 |
Family
ID=18365842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1343995A Pending JPH03204012A (en) | 1989-12-29 | 1989-12-29 | Dropper type constant voltage circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03204012A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169565A (en) * | 1990-12-14 | 1994-06-14 | Internatl Business Mach Corp <Ibm> | On-chip voltage regulator provided with small-dropout boosting power supply |
| JP2007249384A (en) * | 2006-03-14 | 2007-09-27 | Ricoh Co Ltd | Semiconductor device |
| US7764113B2 (en) | 2007-07-11 | 2010-07-27 | Panasonic Corporation | Output circuit |
| CN103001474A (en) * | 2012-11-29 | 2013-03-27 | 深圳Tcl新技术有限公司 | Active power filter device of power source and filter method thereof |
-
1989
- 1989-12-29 JP JP1343995A patent/JPH03204012A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169565A (en) * | 1990-12-14 | 1994-06-14 | Internatl Business Mach Corp <Ibm> | On-chip voltage regulator provided with small-dropout boosting power supply |
| JP2007249384A (en) * | 2006-03-14 | 2007-09-27 | Ricoh Co Ltd | Semiconductor device |
| US7956676B2 (en) | 2006-03-14 | 2011-06-07 | Ricoh Company, Ltd | Semiconductor apparatus |
| US7764113B2 (en) | 2007-07-11 | 2010-07-27 | Panasonic Corporation | Output circuit |
| CN103001474A (en) * | 2012-11-29 | 2013-03-27 | 深圳Tcl新技术有限公司 | Active power filter device of power source and filter method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1098428A3 (en) | Semiconductor power converting apparatus | |
| ATE144661T1 (en) | CLASS-D OUTPUT AMPLIFIER IN BICMOS FOR HEARING AID | |
| JPH08293774A (en) | Gate driving circuit | |
| JPH0847168A (en) | Transistor control circuit and method | |
| EP1583235B1 (en) | Emitter switching driving network to control the storage time | |
| JPH03204012A (en) | Dropper type constant voltage circuit | |
| US5126603A (en) | Circuit utilizes N-channel mos transistors having reduced area dimension for effectively detecting output current of a H-bridge circuit | |
| JPH06276079A (en) | Photocoupler device | |
| EP1014567B1 (en) | Improvements in or relating to an operational amplifier | |
| JPH03204013A (en) | Dropper type constant voltage circuit | |
| FI982046A (en) | chipset | |
| US5349521A (en) | Full wave rectifier using a current mirror bridge | |
| EP0869419A3 (en) | Fast voltage regulation without overshoot | |
| JPH03100814A (en) | Constant voltage circuit | |
| ATE385625T1 (en) | POWER AMPLIFIER | |
| JPS64817A (en) | Logic circuit | |
| US20040041546A1 (en) | Voltage regulator | |
| EP0609009A2 (en) | Dual gate JFET circuit to control threshold voltage | |
| US6501333B1 (en) | Differential amplifier circuit | |
| JPH11127037A (en) | Cmos operational amplifier | |
| JP3003455B2 (en) | Overheat detection circuit | |
| JPH03204014A (en) | Dropper type constant voltage circuit | |
| JPH0117847Y2 (en) | ||
| JP2000221215A (en) | Current detection method and current control method for power mosfet | |
| JPS647338Y2 (en) |