JPH03203233A - Releasing method of wafer - Google Patents

Releasing method of wafer

Info

Publication number
JPH03203233A
JPH03203233A JP1344230A JP34423089A JPH03203233A JP H03203233 A JPH03203233 A JP H03203233A JP 1344230 A JP1344230 A JP 1344230A JP 34423089 A JP34423089 A JP 34423089A JP H03203233 A JPH03203233 A JP H03203233A
Authority
JP
Japan
Prior art keywords
plate
wafer
fluid
pressure
microhole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1344230A
Other languages
Japanese (ja)
Other versions
JP2867051B2 (en
Inventor
Shinji Kiyotake
清武 伸二
Kenichi Higuchi
健一 樋口
Kimihito Matsuo
松尾 公仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU ELECTRON METAL CO Ltd
Osaka Titanium Co Ltd
Original Assignee
KYUSHU ELECTRON METAL CO Ltd
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by KYUSHU ELECTRON METAL CO Ltd, Osaka Titanium Co Ltd filed Critical KYUSHU ELECTRON METAL CO Ltd
Priority to JP1344230A priority Critical patent/JP2867051B2/en
Publication of JPH03203233A publication Critical patent/JPH03203233A/en
Application granted granted Critical
Publication of JP2867051B2 publication Critical patent/JP2867051B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To achieve release simply and positively in a short time and automation of release without producing any deterioration of a wafer by allowing a pressed fluid from the rear side of a plate into a small hole and by releasing the wafer which is attached to the plate from the plate by the fluid pressure. CONSTITUTION:An attaching part 1a for sucking or adhering a wafer is provided on the surface of a plate 1 and small holes 1b are penetrating through the plate 1 at the attaching part 1a. Then, a pressure fluid is allowed to flow from the rear side of the plate 1 to the small hole 1b and the wafer which is attached to the plate 1 due to surface tension or vacuum suction is released from the plate 1 due to the fluid pressure, thus enabling release to be performed by the pressure fluid and the fluid to be supplied from the rear surface of the wafer, thereby preventing the wafer from being contaminated and damaged on release, improving work reliability since no works are performed manually, and achieving automation.

Description

【発明の詳細な説明】 (産業上の利用分野) 本願発明は、プレート上に吸着又は接着(以下、「添着
」と総称する。)されている半導体ウェーへの剥離方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for peeling a semiconductor wafer adsorbed or adhered (hereinafter collectively referred to as "adhesion") onto a plate.

(従来の技術) 例えば、鏡面研磨に際して半導体ウェーハ(以下、単に
rウェーハ」と称する。)は、セラくツク等からなるプ
レート上に添着される。添着手段としては接着剤を塗布
して加熱し接着する方法、或いは吸着する方法が用いら
れるが、いずれの場合においても、鏡面研磨後、上記プ
レー1〜からウェーハを剥離する作業が大変面倒である
(Prior Art) For example, during mirror polishing, a semiconductor wafer (hereinafter simply referred to as an "R wafer") is attached onto a plate made of ceramic or the like. As attachment means, a method of applying an adhesive and adhering by heating, or a method of adsorption is used, but in either case, the work of separating the wafer from the above-mentioned plates 1 to 1 after mirror polishing is very troublesome. .

従来は、実開平1−89747号公報や特開平1−93
126号公報に見られるように、特殊な剥離用治具を用
いた手作業に依っていた。
Conventionally, Japanese Utility Model Application Publication No. 1-89747 and Japanese Patent Application Publication No. 1-93
As seen in Japanese Patent No. 126, manual work using a special peeling jig was required.

(発明が解決しようとする課題) しかし、上記ウェーハは、0.7mm厚以下と極めて薄
くて取扱いにくく、鏡面には微細な傷も許されないため
取扱いに慎重さが要求され、さらにウェーハの裏面につ
いても刃物等による傷や、ウェーハに接触する金属から
の悪影響が許されないため、取扱い治具の形状や仕様、
材質等の制限がある。そのため、上記治具を用いた手作
業に依る剥離作業は、熟練を要し、作業時間もかかって
いた。そして、上記剥離工程は自動化しにくい工程とさ
れていた。
(Problem to be solved by the invention) However, the above-mentioned wafer is extremely thin with a thickness of 0.7 mm or less and is difficult to handle.The mirror surface does not allow even minute scratches, so careful handling is required. The shape and specifications of handling jigs,
There are restrictions on materials, etc. Therefore, manual peeling work using the above-mentioned jig requires skill and takes a lot of time. The above-mentioned peeling process is considered to be a process that is difficult to automate.

もっとも、前記特開平1−93126号公報において、
治具を用いないで、半導体ウェーへ郁にだけ温度制御さ
れた1500Gのシリコンオイル噴流を浴びせ、接着剤
層を熱軟化させ、傾斜したプレート面からウェーハを自
重及び噴流の力で滑らせて剥離を行う技術が開示されて
いる。このシリコンオイル噴流を浴びせる方法は、大気
中においてウェーへの表面を比較的高温となすので、そ
の表面に汚れ(酸化や微粒子の付着等)をもたらす不都
合を生じ好ましくない。それに、上記技術は、接着剤を
直接に熱軟化させるというよりも、ウェーハを通じて間
接的に熱軟化を行うものであるため、その効果はあまり
期待し得ないものであった。
However, in the above-mentioned Japanese Patent Application Laid-Open No. 1-93126,
Without using a jig, the semiconductor wafer is exposed to a 1500G jet of silicone oil with a temperature controlled temperature, the adhesive layer is thermally softened, and the wafer is peeled off from the inclined plate surface by sliding under its own weight and the force of the jet. A technique for performing this has been disclosed. This method of spraying the wafer with a jet of silicone oil heats the surface of the wafer at a relatively high temperature in the atmosphere, which is undesirable because it causes contamination (oxidation, adhesion of fine particles, etc.) on the surface. In addition, the above-mentioned technique does not directly thermally soften the adhesive, but rather indirectly thermally softens the adhesive through the wafer, so its effects cannot be expected to be very promising.

本願発明は上記実情下にあって、短時間に簡単且つ確実
に剥離ができ、しかもウェーハの劣化を生じることがな
く、剥離の自動化を具現できるウェーハの剥離方法を提
案することを課題としてなされた。
Under the above circumstances, the present invention was made with the object of proposing a wafer peeling method that can perform peeling easily and reliably in a short time, does not cause wafer deterioration, and can realize automation of peeling. .

(課題を解決するための手段) 本願第1の発明は、プレートのウェーハ添着部に、予め
表裏に貫通する微小孔を形成しておき、プレートの裏側
から前記微小孔へ圧力流体を流し込み、表面張力或いは
真空吸着によってプレートに添着されているウェーハを
、流体圧によりプレートから剥離するものであり、本願
第2の発明は、プレートのウェーハ添着部に、予め表裏
に貫通する微小孔を形成しておき、プレートの裏側から
前記微小孔へ冷却流体を加圧しつつ流し込み、接着剤に
よってプレートに添着されているウェーハの当該接着剤
層を冷却して、前記接着剤層を体積変化させ、当該体積
変化によって接着剤層に破壊を生じさせ、流体圧により
プレートに添着されているウェーハをプレートから剥離
するものであり、本願第3の発明は、プレートのウェー
ハ添着部に、予め表裏に貫通する微小孔を形成しておき
、プレートの裏側から前記微小孔へ圧力流体を流し込む
とともに、ウェーハの上面に流体を吹き付けつつ、プレ
ートに添着されているウェーハを前記微小孔からの流体
の流体圧によりプレートから剥離するものである。ここ
で真空吸着とは、接着剤以外の液体を介してウェーハが
プレートに当接する際、両者の間が大気圧以下の圧力と
なってウェーハがプレートに添着されている場合を主と
して意味するものである。
(Means for Solving the Problems) The first invention of the present application is to form a microhole penetrating the front and back sides of the plate in advance in the wafer attachment part, and to flow pressure fluid into the microhole from the back side of the plate to A wafer attached to a plate by tension or vacuum adsorption is peeled from the plate by fluid pressure, and the second invention of the present application is to separate the wafer from the plate by using fluid pressure. then pressurized cooling fluid flows into the microholes from the back side of the plate to cool the adhesive layer of the wafer attached to the plate with adhesive, causing the adhesive layer to change in volume. The wafer attached to the plate is peeled off from the plate by the fluid pressure by causing damage to the adhesive layer, and the third invention of the present application is to form a microhole that penetrates the front and back sides of the plate in advance in the wafer attachment part of the plate. is formed in advance, and while flowing pressure fluid into the microholes from the back side of the plate and spraying the fluid onto the top surface of the wafer, the wafer attached to the plate is peeled off from the plate by the fluid pressure of the fluid from the microholes. It is something to do. Here, vacuum adsorption mainly refers to the case where when the wafer comes into contact with the plate via a liquid other than adhesive, the pressure between the two becomes less than atmospheric pressure, and the wafer is attached to the plate. be.

(作 用) 研磨を終了したウェーハはプレートごとウェーハキャリ
ア近傍に運ばれ、ここでプレート裏面の前記微小孔の部
分に流体送給管の開口端を気密若しくは水密に接続し、
ここから冷却された空気又は液体を圧力をかけて流し込
む。本願第1の発明によれば、流体の圧力作用によって
、また、本願第2の発明によれば、接着剤層が冷やされ
て体積変化を生じることにより、更に本願第3の発明に
よれば、ウェーハの上面に流体が吹き付けられることが
相俟って、プレートに添着されているウェーハはプレー
トから剥離される。
(Function) The wafer that has been polished is transported to the vicinity of the wafer carrier together with the plate, where the open end of the fluid feed pipe is connected airtightly or watertightly to the portion of the microhole on the back surface of the plate.
From here, cooled air or liquid is forced under pressure. According to the first invention of the present application, due to the pressure action of the fluid, and according to the second invention of the present application, the adhesive layer is cooled to cause a volume change, and further according to the third invention of the present application, In combination with the fluid being sprayed onto the top surface of the wafer, the wafer attached to the plate is peeled off from the plate.

(実施例) 以下、本願発明を添付図面に基いて説明する。(Example) Hereinafter, the present invention will be explained based on the accompanying drawings.

第1図は本願発明の実施態様を示す一郁破断図、第2図
はプレートの拡大平面図である。
FIG. 1 is a cutaway view showing an embodiment of the present invention, and FIG. 2 is an enlarged plan view of the plate.

これらの図に示すように、プレート1の表面には、ウェ
ーハ2を吸着又は接着すべき添着部1aが設けられ、該
添着部1aには、プレー1〜1の表裏に貫通する微小孔
1bが形成されている。
As shown in these figures, the surface of the plate 1 is provided with an adhesion part 1a on which the wafer 2 is to be attracted or adhered, and the adhesion part 1a has micro holes 1b penetrating the front and back sides of the plates 1 to 1. It is formed.

なお、ウェーハの直径が76mm〜200mm程度の場
合は、微小孔の直径は0.5〜1.5mm位、個数は5
〜12個程度が好ましい。これは、後記のように、この
孔1bから圧力流体を供給するので、孔1bが大きいと
、ウェーハに加えられる圧力が大きくなって、ウェーハ
に悪影響を与えて好ましくないからである。
In addition, when the diameter of the wafer is about 76 mm to 200 mm, the diameter of the microholes is about 0.5 to 1.5 mm, and the number of micropores is about 5.
~12 pieces is preferable. This is because, as will be described later, pressure fluid is supplied from the hole 1b, so if the hole 1b is large, the pressure applied to the wafer will be large, which is undesirable as it will have an adverse effect on the wafer.

第1図では、上記プレート1の添着部1aに接着剤でウ
ェーハ2を仮接着し、更に加熱することによって接着剤
を固化してなる接着態様の場合の剥離方法を示している
。3は固化された接着剤層を示している。このように、
ウェーハ2がプレート1に強固に添着されている場合は
、上記プレート1の裏面から微小孔1bを通し、ウェー
ハ2裏面に流体圧を加えただけでは剥離できない。
FIG. 1 shows a peeling method in the case of an adhesive mode in which a wafer 2 is temporarily attached to the attached portion 1a of the plate 1 with an adhesive, and the adhesive is further solidified by heating. 3 indicates a solidified adhesive layer. in this way,
If the wafer 2 is firmly attached to the plate 1, it cannot be separated simply by applying fluid pressure to the back surface of the wafer 2 through the microhole 1b from the back surface of the plate 1.

そこで、このような場合には、温度変化による体積変化
の錘を利用して接着剤層3に歪破壊を生じさせ、この状
態下に流体圧をかける。
Therefore, in such a case, strain fracture is caused in the adhesive layer 3 using a weight of volume change due to temperature change, and fluid pressure is applied under this state.

すなわち、プレート1の添着部1aの裏面に流体送給管
4の開口端を気密若しくは水密に接続し、冷却された空
気又は液体(以下、「冷却流体5」と称する。)を圧力
をかけて流体、送給管4に送る。かくして、冷却流体5
がプレート1の裏面に到ることにより、接着剤層3が冷
やされ、体積変化を生じる。
That is, the open end of the fluid feed pipe 4 is airtightly or watertightly connected to the back surface of the attachment part 1a of the plate 1, and cooled air or liquid (hereinafter referred to as "cooling fluid 5") is applied under pressure. The fluid is sent to the feed pipe 4. Thus, cooling fluid 5
When the adhesive layer 3 reaches the back surface of the plate 1, the adhesive layer 3 is cooled and a volume change occurs.

ウェーハ2はプレート1から少しの力で剥れ得る状態と
なる。そして、加圧されている冷却流体5によってウェ
ーハ2はプレート1から剥れる。
The wafer 2 is now in a state where it can be peeled off from the plate 1 with a small amount of force. The wafer 2 is then separated from the plate 1 by the pressurized cooling fluid 5.

実施例では、剥離した瞬間の飛び跳ねを防止すべく、ノ
ズル6から空気又は水等の流体7をウェーハ2の上面に
吹き付けると共に、プレート1を傾斜した状態として自
重及び流体7の圧力で滑り移送する構成としている。8
はノズル6の支架材、9はテフロン等からなるシュータ
、1oはキャリアを示す。このように、流体7をウェー
ハ2の上面に吹き付けることとした場合は、キャリア1
゜へのウェーハの移送につき、適宜所望のコン1へロー
ルを行い得る結果が得られている。
In the embodiment, in order to prevent the wafer from jumping at the moment of separation, a fluid 7 such as air or water is sprayed onto the upper surface of the wafer 2 from a nozzle 6, and the plate 1 is tilted to slide and transfer using its own weight and the pressure of the fluid 7. It is structured as follows. 8
9 indicates a support member for the nozzle 6, 9 indicates a chute made of Teflon or the like, and 1o indicates a carrier. In this way, when it is decided to spray the fluid 7 onto the upper surface of the wafer 2, the carrier 1
Regarding the transfer of the wafer to the wafer, it has been possible to appropriately roll the wafer to the desired controller 1.

もっとも、プレート1に対するウェーハ2の添着が表面
張力或いは真空吸着に依るものである場合は、単なる圧
力流体5aを流体送給管4に送給すれば事足りる。この
場合は、第1図において接着剤層3の存しない態様とな
る。
However, if the attachment of the wafer 2 to the plate 1 is based on surface tension or vacuum adsorption, it is sufficient to simply feed the pressure fluid 5a to the fluid feed pipe 4. In this case, the adhesive layer 3 does not exist in FIG. 1.

第3図は、プレート1にテンプレート11を用いている
場合を示したもので、このテンプレート11によりウェ
ーハ2の添着位置決めが確実になされ得ることとなる。
FIG. 3 shows a case where a template 11 is used for the plate 1, and this template 11 allows the attachment and positioning of the wafer 2 to be reliably determined.

(発明の効果) 以上説明したように、本願発明に依れば、従来治具を用
いて行っていた剥離を、圧力流体もしくは冷却流体によ
って行うことができ、しかも、かかる流体はウェーハ裏
面から供給されるので、剥離時にウェーハが汚染された
り傷付いたりすることが回避され、更に人手作業でない
ため、作業に確実性がもたらされ、自動化も可能である
等、本願発明は多くの利点を有するものである。
(Effects of the Invention) As explained above, according to the present invention, separation, which was conventionally performed using a jig, can be performed using pressure fluid or cooling fluid, and such fluid is supplied from the back surface of the wafer. The present invention has many advantages, such as avoiding contamination or damage to the wafer during stripping, and since it does not require manual labor, the work is reliable and can be automated. It is something.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本願発明の実施態様を示す一郁破断正面図、第
2図はプレートの拡大平面図、第3図はテンプレートを
用いたプレート部分の断面図である。 1・・・プレート 1b・・・微小孔 3・・・接着剤層 5a・・・圧力流体
FIG. 1 is a cutaway front view showing an embodiment of the present invention, FIG. 2 is an enlarged plan view of the plate, and FIG. 3 is a sectional view of the plate portion using a template. 1... Plate 1b... Microhole 3... Adhesive layer 5a... Pressure fluid

Claims (3)

【特許請求の範囲】[Claims] (1)プレートのウェーハ添着部に、予め表裏に貫通す
る微小孔を形成しておき、プレートの裏側から前記微小
孔へ圧力流体を流し込み、プレートに添着されているウ
ェーハを、流体圧によりプレートから剥離することを特
徴とするウェーハの剥離方法。
(1) A microhole is formed in advance in the wafer attachment part of the plate, and a pressure fluid is flowed into the microhole from the back side of the plate, and the wafer attached to the plate is removed from the plate by the fluid pressure. A wafer peeling method characterized by peeling.
(2)プレートのウェーハ添着部に、予め表裏に貫通す
る微小孔を形成しておき、プレートの裏側から前記微小
孔へ冷却流体を加圧しつつ流し込み、接着剤によってプ
レートに添着されているウェーハの当該接着剤層を冷却
して、前記接着剤層を体積変化させ、当該体積変化によ
って接着剤層に破壊を生じさせ、流体圧によりプレート
に添着されているウェーハをプレートから剥離すること
を特徴とするウェーハの剥離方法。
(2) A microhole is formed in advance in the wafer attachment part of the plate, and the cooling fluid is poured into the microhole from the back side of the plate while being pressurized. The adhesive layer is cooled to change the volume of the adhesive layer, the volume change causes destruction of the adhesive layer, and the wafer attached to the plate is separated from the plate by fluid pressure. wafer stripping method.
(3)プレートのウェーハ添着部に、予め表裏に貫通す
る微小孔を形成しておき、プレートの裏側から前記微小
孔へ圧力流体を流し込むとともに、ウェーハの上面に流
体を吹き付けつつ、プレートに添着されているウェーハ
を前記微小孔からの流体の流体圧によりプレートから剥
離することを特徴とするウェーハの剥離方法。
(3) A microhole penetrating the front and back sides of the plate is formed in advance in the wafer attachment part of the plate, and while pressure fluid is poured into the microhole from the back side of the plate, the fluid is sprayed onto the top surface of the wafer and the wafer is attached to the plate. A wafer peeling method characterized in that the wafer is peeled from the plate by the fluid pressure of the fluid from the microholes.
JP1344230A 1989-12-28 1989-12-28 Wafer peeling method Expired - Lifetime JP2867051B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1344230A JP2867051B2 (en) 1989-12-28 1989-12-28 Wafer peeling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1344230A JP2867051B2 (en) 1989-12-28 1989-12-28 Wafer peeling method

Publications (2)

Publication Number Publication Date
JPH03203233A true JPH03203233A (en) 1991-09-04
JP2867051B2 JP2867051B2 (en) 1999-03-08

Family

ID=18367641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1344230A Expired - Lifetime JP2867051B2 (en) 1989-12-28 1989-12-28 Wafer peeling method

Country Status (1)

Country Link
JP (1) JP2867051B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030019254A (en) * 2001-08-30 2003-03-06 닛본 덴기 가부시끼가이샤 Wafer holder protecting wafer against electrostatic breakdown
JP2014068011A (en) * 2012-09-21 2014-04-17 Lam Research Corporation Method of removing damaged epoxy from electrostatic chuck

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030019254A (en) * 2001-08-30 2003-03-06 닛본 덴기 가부시끼가이샤 Wafer holder protecting wafer against electrostatic breakdown
JP2014068011A (en) * 2012-09-21 2014-04-17 Lam Research Corporation Method of removing damaged epoxy from electrostatic chuck

Also Published As

Publication number Publication date
JP2867051B2 (en) 1999-03-08

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