JPH03202444A - Film forming source and its production - Google Patents
Film forming source and its productionInfo
- Publication number
- JPH03202444A JPH03202444A JP34104189A JP34104189A JPH03202444A JP H03202444 A JPH03202444 A JP H03202444A JP 34104189 A JP34104189 A JP 34104189A JP 34104189 A JP34104189 A JP 34104189A JP H03202444 A JPH03202444 A JP H03202444A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- forming source
- magnetic film
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052742 iron Inorganic materials 0.000 claims abstract description 25
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 18
- 239000010936 titanium Substances 0.000 claims description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 32
- 229910000765 intermetallic Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 229910010069 TiCo Inorganic materials 0.000 abstract description 2
- 229910010340 TiFe Inorganic materials 0.000 abstract description 2
- 238000005477 sputtering target Methods 0.000 abstract description 2
- 229910010336 TiFe2 Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 41
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010587 phase diagram Methods 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002546 FeCo Inorganic materials 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- JSUSQWYDLONJAX-UHFFFAOYSA-N iron terbium Chemical compound [Fe].[Tb] JSUSQWYDLONJAX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁性膜を形成するためのｉｌｌ！（ソース）
に係り、特に光磁気ディスクの記録膜を形成するための
スパンタリング用ターゲントに好適な成膜用源およびそ
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention provides ill! for forming a magnetic film. (sauce)
In particular, the present invention relates to a film forming source suitable for a sputtering target for forming a recording film of a magneto-optical disk, and a method for manufacturing the same.
近年、情報を高密度、大容量で記録することができる光
磁気ディスクが普及してきている。この光磁気ディスク
は、磁気記録膜にテルビウム鉄コバル） （ＴｂＦｅＣ
ｏ）等の磁気光学効果を有する希土類−遷移金属合金薄
膜が用いられている。In recent years, magneto-optical disks that can record information with high density and large capacity have become popular. This magneto-optical disk has a magnetic recording film of terbium iron cobal (TbFeC).
A rare earth-transition metal alloy thin film having a magneto-optical effect such as (o) is used.
そして、これらの磁性膜は、−ｉにスパッタリングによ
って形成している。These magnetic films are formed on -i by sputtering.
磁性膜として代表的なＴｂＦ ｅＣｏ磁性膜をスパッタ
リングによって形成する場合、第３図に示したように、
磁性膜を形成する基Ｆｉ１０の下方にＴｂＦｅＣｏ合金
ターゲット１２を配ＷＬ／、この合金ターゲット１２を
スバ・ン夕して磁性膜を底膜する方法がある。When forming a typical TbFeCo magnetic film by sputtering, as shown in FIG.
There is a method in which a TbFeCo alloy target 12 is disposed below the base Fi 10 forming the magnetic film, and this alloy target 12 is spun down to form a magnetic film.
このＴｂＦｅＣｏからなる合金ターゲフト１２をスパッ
タリングする方法は、基板１０を一方向に移動させ、合
金ターゲフト１２の上方に次々と送り込むことにより、
多数の基板１０を連続的にＩｉ膜することが可能であり
、将来の大量生産に適している。しかし、ＴｂＦｅＣｏ
合金ターゲット１２をスパッタすると、合金ターゲット
１２中のＴｂは、ターゲフトの周辺部に向けて放出され
る性質のあることが知られている。このため、合金ター
ゲット１２から放出される粒子中１４のＴｂは、ターゲ
ット中心部で濃度が低く、ターゲット周辺部で高くなり
、成膜したＴｂＦｅＣｏ磁性膜中のＴｂが、第３図の上
部に示したような分布となる。従って、基板１０に成膜
した磁性膜は、磁気特性に大きく影響するＴｂが一様の
組成とならず、磁気特性が不均一になる欠点がある。The method for sputtering the alloy target ft 12 made of TbFeCo is to move the substrate 10 in one direction and send it one after another above the alloy target ft 12.
It is possible to continuously coat a large number of substrates 10 with Ii film, and it is suitable for future mass production. However, TbFeCo
It is known that when the alloy target 12 is sputtered, Tb in the alloy target 12 has a property of being released toward the periphery of the target. Therefore, the concentration of Tb in the particles 14 released from the alloy target 12 is low in the target center and high in the target periphery, and the Tb in the formed TbFeCo magnetic film is as shown in the upper part of FIG. The distribution is as follows. Therefore, the magnetic film formed on the substrate 10 has the disadvantage that Tb, which greatly affects magnetic properties, does not have a uniform composition, resulting in non-uniform magnetic properties.
そこで、このような欠点を避けるために、第４図のよう
にＴｂターゲット（希土類ターゲット）Ｉ６とＦｅＣｏ
ターゲット（遷移金属ターゲット）１８とを同時にスパ
ッタし、回転している基板１０に希土類と遷移金属とを
積層していく方法がある。この方法は、第４図の上部に
示したように、成膜したＴｂＦｅＣｏ磁性膜のＴｂ量を
半径方向にほぼ一様にすることができる。しかも、高価
なＴｂのｆす用効率を高めることができるとともに、成
膜した磁性膜の組成比を自由に変えることができる利点
がある。Therefore, in order to avoid such drawbacks, as shown in Fig. 4, Tb target (rare earth target) I6 and FeCo
There is a method of simultaneously sputtering a target (transition metal target) 18 and laminating the rare earth and transition metal on the rotating substrate 10. With this method, as shown in the upper part of FIG. 4, the amount of Tb in the formed TbFeCo magnetic film can be made almost uniform in the radial direction. Furthermore, there are advantages in that it is possible to increase the efficiency of use of expensive Tb and to freely change the composition ratio of the formed magnetic film.
［発明が解決しようとする課題〕
しかし、ＴｂＦｅＣｏの磁性膜は酸化されやすく、しか
も酸化されると酸化部の表面が凸凹に隆起する変化を生
じ、この隆起が磁性膜を覆っている保護膜を破損し、酸
化が一層促進される欠点がある。このため、ＴｂＦｅＣ
ｏ磁性膜に耐食性のあるチタンＴｉのような第四元素を
入れて、酸化に基づく磁性膜表面の隆起を抑制すること
が行われている。このＴｂＦｅＣｏにＴｉを添加したＴ
ｂＦｅｃｏＴｉ磁性膜は、ＴｂターゲットとＦｅＣｏＴ
ｉ合金ターゲットとをスパッタして形成するが、ＦｅＣ
ｏＴｊターゲットを作成する際に、Ｔｉが偏析を起こし
やすい。[Problems to be Solved by the Invention] However, the TbFeCo magnetic film is easily oxidized, and when it is oxidized, the surface of the oxidized part becomes bumpy, and these bumps damage the protective film covering the magnetic film. It has the disadvantage that it is damaged and oxidation is further accelerated. For this reason, TbFeC
o A quaternary element such as titanium, which has corrosion resistance, is added to the magnetic film to suppress the protrusion of the magnetic film surface due to oxidation. This TbFeCo with Ti added
The bFecoTi magnetic film consists of a Tb target and FeCoT.
It is formed by sputtering with an i alloy target, but FeC
When creating an oTj target, Ti tends to cause segregation.
すなわち、ＦｅとＣｏとは、原子半径がほぼ同じで密度
も近いところから、第５図の状態図に示したように、両
者は変態の前後においても完全に溶解し、任意の割合の
固溶体を形成する。ところが、ＦｅとＴｉまたはＣｏと
Ｔｉは、原子半径や密度が大きく異なり、第６図、第７
図に示した状態図のようにいくつかの変態を有し、母材
中のＴｉが偏析することがある。このため、ＦｅＣｏＴ
ｉ合金ターゲットを作成する際に、単体のＦｅ、Ｃ０１
Ｔｉを混合して溶融し、冷却するとＦｅＣ０の結晶粒界
付近にＴｉが偏析し、ＦｅＣｏＴｔターゲットとをスパ
ッタすると、Ｔｉが放出される部分とそうでない部分と
を生じ、得たＴｂＦｅＣｏＴｉｍ性膜中のＴｉ濃度にバ
ラツキを生し、第２図の実線のように書込みまたは読み
出し時の低周波領域においてノイズレベルが異常に大き
くなる欠点がある。In other words, since Fe and Co have almost the same atomic radius and similar density, as shown in the phase diagram in Figure 5, both are completely dissolved before and after transformation, and can form a solid solution of any proportion. Form. However, Fe and Ti or Co and Ti have very different atomic radii and densities, and as shown in Figures 6 and 7,
As shown in the phase diagram shown in the figure, there are several transformations, and Ti in the base material may segregate. For this reason, FeCoT
When creating an i-alloy target, single Fe, C01
When Ti is mixed and melted and cooled, Ti segregates near the grain boundaries of FeC0, and when sputtered with a FeCoTt target, there are parts where Ti is released and parts where it is not, and the resulting TbFeCoTi film is This has the disadvantage that the Ti concentration varies and the noise level becomes abnormally large in the low frequency region during writing or reading, as shown by the solid line in FIG.
本発明は、前記従来技術の欠点を解消するためになされ
たもので、磁性膜のノイズレベルを低減することができ
る成膜用源を提供することを目的とし、またその製造方
法を提供することを目的としている。The present invention has been made in order to eliminate the drawbacks of the prior art, and aims to provide a film forming source capable of reducing the noise level of a magnetic film, and also to provide a manufacturing method thereof. It is an object.
上記目的を達成するために、本発明に係る成膜用源は、
組成が鉄、コバルトおよびチタンからなる成膜用源にお
いて、前記チタンは、鉄またはコバルトの少なくとも何
れか一方と金属間化合物を形成していることを特徴とし
ている。In order to achieve the above object, the film forming source according to the present invention includes:
The film forming source having a composition of iron, cobalt and titanium is characterized in that the titanium forms an intermetallic compound with at least one of iron and cobalt.
また、上記の成膜用源を作成する本発明の成膜用源の製
造方法は、チタンと鉄またはチタンとコバルトとの金属
間化合物の少なくとも何れか一方と鉄およびコバルトと
を溶融し、冷却することを特徴としている。In addition, the method for producing the film-forming source of the present invention for producing the above-mentioned film-forming source melts at least one of the intermetallic compounds of titanium and iron or titanium and cobalt, and iron and cobalt, and then cools the mixture. It is characterized by
上記の如く構成した成膜用源（ターゲソ））Ｌチタンが
鉄またはコバルトとＴｉＦｅ、７ｉＦ６、、Ｔ１Ｃｏ、
Ｔ１Ｃｏ□等の金属間化合物を形成している。このため
、このターゲットをスパッタした場合、従来のＴｉが偏
析している場合と異なり、Ｔｉのみが放出されることが
なく、形成したＴｂＦｅＣｏ磁性膜のＴｉの濃度分布が
小さくなって、ノイズレベルを低下させることができる
。The film forming source (target source) configured as above) L titanium is iron or cobalt and TiFe, 7iF6, T1Co,
Intermetallic compounds such as T1Co□ are formed. Therefore, when this target is sputtered, unlike conventional cases where Ti is segregated, only Ti is not released, and the Ti concentration distribution in the formed TbFeCo magnetic film becomes smaller, reducing the noise level. can be lowered.
また、ＴｉをＦｅまたはＣＯとの金属間化合物にしてＦ
ｅ、Ｃｏとともに溶融してＦｅＣｏＴｉのターゲットを
作成すると、ＦｅまたはＣｏとの金属間化合物にして加
えたＴｉが、冷却されて凝固する際に、再びＦｅ、Ｃｏ
と金属間化合物を形成する。このため、ＦｅＣｏＴｉを
ターゲットにしてスパッタすると、Ｔｉのみが放出され
ることがない。In addition, Ti can be made into an intermetallic compound with Fe or CO and F
When a FeCoTi target is created by melting together with e and Co, when the Ti added as an intermetallic compound with Fe or Co is cooled and solidified, it becomes Fe, Co again.
and form intermetallic compounds. Therefore, when sputtering is performed using FeCoTi as a target, only Ti is not released.
Ｆｅ、Ｃｏに加えるＴｉとＦｅまたはＣｏとの金属間化
合物は、ＴｉＦｅ５ＴｉＦｅｚ、”ｒｉｃｏ、ＴｉＣｏ
ｚ、Ｔｉｚ Ｃｏを用いることができる。そして、これ
らの金属間化合物の量を調節することにより、ＦｅＣｏ
に添加するＴｉの量を、Ｔｉを偏析させることなく制御
することができる。Intermetallic compounds of Ti and Fe or Co added to Fe and Co include TiFe5TiFez, "rico, TiCo
z, Tiz Co can be used. By adjusting the amount of these intermetallic compounds, FeCo
The amount of Ti added can be controlled without causing Ti to segregate.
〔実施例）
以下、本発明の成膜用源およびその製造方法の好ましい
実施例を詳説する。[Example] Hereinafter, preferred examples of the film forming source and the manufacturing method of the present invention will be described in detail.
粒径が５０μｍ〜数ｍｍのＦｅ、ＣｏおよびＴｉＦｅｚ
、ＴｉＣｏｚを混合し、これを１５５０°Ｃ〜１６００
°Ｃにおいて真空溶解した後、放冷して８５ａ ｔ％Ｆ
ｅ、１２ａｔ、％Ｃ０１３ａｔ％ＴｉのＦｅＣｏＴｉ合
金を得た。その後、このＦｅＣｏＴｉ合金を熱間処理で
圧延し、直径が２０．３２ｃｍ（８インチ）、厚さが２
．５ｍｍの円板にした。Fe, Co and TiFez with particle size of 50 μm to several mm
, TiCoz and heated it to 1550°C to 1600°C.
After vacuum melting at °C, let it cool to 85a t%F.
A FeCoTi alloy of 12at%C013at%Ti was obtained. This FeCoTi alloy is then hot rolled to a diameter of 20.32 cm (8 inches) and a thickness of 2
．． It was made into a 5mm disc.
次に、上記の円板を遷移金属ターゲットとし、純Ｔｂタ
ーゲット（直径２０．３２ｍｍ）とともにスパッタリン
グを行った。すなわち、到達真空度が２Ｘ１０−’Ｔｏ
ｒｒのチャンバ内を１×１０−”Ｔｏｒｒのアルゴンガ
ス圧にし、ＦｅＣｏＴｉターゲットに対して１ｋＷ、Ｔ
ｂターゲットに対して、３ ｏ ｏ ｗｏ）′ｒ１．力
を投入し、５０ｒｐｍ程度で回転している基板に約１０
００人のＴｂＦｅＣ。Next, sputtering was performed using the above disk as a transition metal target together with a pure Tb target (diameter 20.32 mm). In other words, the ultimate degree of vacuum is 2X10-'To
The argon gas pressure in the rr chamber was set to 1 × 10-” Torr, and 1 kW and T were applied to the FeCoTi target.
b target, 3 o o wo)'r1. Apply force to the board rotating at about 50 rpm for about 10 minutes.
00 TbFeC.
Ｔｉ磁性膜を形成した。なお、基板にはポリカーボネー
トを用い、ＴｂＦｅＣｏＴｉｔａ性膜の上下にＳ ｉ
Ｎ系の誘電体保護膜を数８００人設けた。A Ti magnetic film was formed. Note that polycarbonate is used for the substrate, and Si
Several 800 people installed N-based dielectric protection films.
このようにして形成したＴｂＦｅＣｏＴｉ磁性膜のノイ
ズレヘルの特性を測定したところ、第１図ムこ示す結果
が得られ、書込み、読み出し時の低周波領域におけるノ
イズレベルの低減を図ることができた。すなわち、実施
例のＦｅＣｏＴｉターゲットを用いたＴｂＦｅＣｏＴｉ
［性膜は、第２図の破線に示す如く、実線で示した従来
の磁性膜よりノイズレヘルを低減することができる。ま
た、ＴｂＦｅＣｏＴｉ磁性膜を電子顕微鏡により観察し
たところ、従来より均一なものであることが確認された
。When the noise level characteristics of the TbFeCoTi magnetic film thus formed were measured, the results shown in FIG. 1 were obtained, and it was possible to reduce the noise level in the low frequency region during writing and reading. That is, TbFeCoTi using the FeCoTi target of Example
[The magnetic film, as shown by the broken line in FIG. 2, can reduce the noise level more than the conventional magnetic film shown by the solid line. Furthermore, when the TbFeCoTi magnetic film was observed using an electron microscope, it was confirmed that it was more uniform than the conventional film.
なお、前記実施例においては、溶融してＦｅＣｏＴｉタ
ーゲットを形成する場合について説明したが、粒径が５
０ａｍ〜数ｍｍ程度のＦｅ、Ｃ。In the above example, the case where the FeCoTi target was formed by melting was explained, but when the particle size was 5.
Fe, C of about 0 am to several mm.
およびＴｉとＦｅまたはＣｏとの金属間化合物を、ホン
トプレスまたは熱間静水圧処理（ＨＩＰ）等の焼結によ
って、ＴｉとＦｅまたはＣＯとの金属間化合物を有する
ＦｅＣｏＴｉターゲットを形成してもよい。この場合、
粒径は微細なほどよい力匁コストが上昇する。また、粒
径が数ｍｍを超えると、ＦｅＣｏＴｉの１ＪＩＩ戒の均
一性を損なうおそれがある。And a FeCoTi target having an intermetallic compound of Ti and Fe or CO may be formed by sintering the intermetallic compound of Ti and Fe or Co by real pressing or hot isostatic pressure treatment (HIP). . in this case,
The finer the particle size, the higher the force cost. Moreover, if the particle size exceeds several mm, there is a risk that the uniformity of FeCoTi's 1JII precept may be impaired.
Ｃ発明の効果〕
以上に説明したように、本発明の成膜用源によれば、Ｆ
ｅＣｏＴｉからなるターゲットのＴｉを、ＦｅまたはＣ
Ｏとの金属間化合物としたことにより、スパッタリング
の際にターゲットから放出されるＴｉ量の変動が少なく
なり、磁性膜中のＴｉの分布を均一にでき、ノイズレヘ
ルを低減できる。C Effects of the Invention] As explained above, according to the film forming source of the present invention, F
Target Ti consisting of eCoTi is replaced with Fe or C
By forming an intermetallic compound with O, fluctuations in the amount of Ti emitted from the target during sputtering can be reduced, the distribution of Ti in the magnetic film can be made uniform, and the noise level can be reduced.
また、本発明の成膜用源の製造方法によれば、ＴｉをＦ
ｅまたはＣｏとの金属間化合物の状態で添加するため、
形成したＦｅＣｏＴｉ合金中ΦＴｉが、ＦｅまたはＧｏ
との金属間化合物の状態で存在し、スパッタリングの際
におけるＴｉの放出のバラツキを小さくすることができ
る。Further, according to the method for manufacturing a film forming source of the present invention, Ti is replaced with F.
Because it is added in the form of an intermetallic compound with e or Co,
ΦTi in the formed FeCoTi alloy is Fe or Go
It exists in the state of an intermetallic compound with Ti, and can reduce variations in Ti release during sputtering.
第１図は本発明に係る成膜用源を用いて形成したＴｂＦ
ｅＣｏＴｉ磁性膜の書込読出周波数とノイズレベルとの
関係を示す図、第２図は従来のＦｅＣｏＴｉターゲット
とＴｂターゲットとを用いて作成したＴｂＦｅＣｏＴｉ
磁性膜の書込読出周波数とノイズレヘルとの関係を示す
図、第３図、第４図はスパッタリングにより磁性膜を形
成する方法の説明図、第５図はＣｏ−Ｆｅの合金状態鬼
第６図はＴ ｉ −Ｆ ｅの合金状態図、第７図はＴ１
Ｃｏの合金状態図である。Figure 1 shows TbF formed using the film forming source according to the present invention.
A diagram showing the relationship between write/read frequency and noise level of an eCoTi magnetic film.
A diagram showing the relationship between the read/write frequency of a magnetic film and the noise level. Figures 3 and 4 are explanatory diagrams of a method of forming a magnetic film by sputtering. Figure 5 shows the state of the Co-Fe alloy. Figure 6 is the alloy phase diagram of T i -F e, and Figure 7 is T1
It is an alloy phase diagram of Co.
Claims (2)
源において、前記チタンは、鉄またはコバルトの少なく
とも何れか一方と金属間化合物を形成していることを特
徴とする成膜用源。(1) A film forming source having a composition of iron, cobalt and titanium, wherein the titanium forms an intermetallic compound with at least either iron or cobalt.
合物の少なくとも何れか一方と鉄およびコバルトとを溶
融し、冷却することを特徴とする成膜用源の製造方法。(2) A method for producing a film forming source, which comprises melting at least one of an intermetallic compound of titanium and iron or titanium and cobalt, and iron and cobalt, followed by cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34104189A JPH03202444A (en) | 1989-12-29 | 1989-12-29 | Film forming source and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34104189A JPH03202444A (en) | 1989-12-29 | 1989-12-29 | Film forming source and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03202444A true JPH03202444A (en) | 1991-09-04 |
Family
ID=18342686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34104189A Pending JPH03202444A (en) | 1989-12-29 | 1989-12-29 | Film forming source and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03202444A (en) |
-
1989
- 1989-12-29 JP JP34104189A patent/JPH03202444A/en active Pending
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