JPH03199043A - Antireflection film and forming method thereof - Google Patents
Antireflection film and forming method thereofInfo
- Publication number
- JPH03199043A JPH03199043A JP1342368A JP34236889A JPH03199043A JP H03199043 A JPH03199043 A JP H03199043A JP 1342368 A JP1342368 A JP 1342368A JP 34236889 A JP34236889 A JP 34236889A JP H03199043 A JPH03199043 A JP H03199043A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyether
- alkyl group
- organic solvent
- monoalkyltrialkoxysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229920000570 polyether Polymers 0.000 claims abstract description 28
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 26
- 239000003960 organic solvent Substances 0.000 claims abstract description 24
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012528 membrane Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 abstract description 7
- 229920001223 polyethylene glycol Polymers 0.000 abstract description 7
- 230000018044 dehydration Effects 0.000 abstract description 6
- 238000006297 dehydration reaction Methods 0.000 abstract description 6
- 150000001298 alcohols Chemical class 0.000 abstract description 5
- 238000009833 condensation Methods 0.000 abstract description 5
- 230000005494 condensation Effects 0.000 abstract description 5
- 150000002576 ketones Chemical class 0.000 abstract description 5
- 238000006116 polymerization reaction Methods 0.000 abstract description 5
- 150000002148 esters Chemical class 0.000 abstract description 3
- 125000003545 alkoxy group Chemical group 0.000 abstract description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 abstract description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 abstract description 2
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 55
- -1 polytetramethylene Polymers 0.000 description 12
- 239000011148 porous material Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、反射防止膜およびその形成方法に関するもの
で、とりわけ広い波長域にわたって低い反射率を基体に
付与できる単層の反射防止膜およびその形成方法に関す
る。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an anti-reflection film and a method for forming the same, and in particular to a single-layer anti-reflection film that can impart low reflectance to a substrate over a wide wavelength range and its method. Regarding the forming method.
従来、光学部品、眼鏡、デイスプレィ装置などにコーテ
ィングされる単層の反射防止膜としては、MgFz蒸着
膜が知られている。しかしながらMgF z蒸着膜の単
層膜は広い波長域にわたって低い反射率が得られないと
いう欠点をもっている。上記の欠点を解決する技術とし
て、雑誌シンソリッドフィルム(Thin 5olid
Films)129.1985) 1には、テトラエ
トキシシランを原料に用いて、ゾルゲル法により細孔を
有するSi0g薄膜を基体に被覆し、広帯域の反射防止
膜を製造する方法が開示されている。BACKGROUND ART Conventionally, a MgFz vapor-deposited film is known as a single-layer antireflection film coated on optical parts, eyeglasses, display devices, and the like. However, the single layer MgFz vapor-deposited film has the drawback that low reflectance cannot be obtained over a wide wavelength range. As a technology to solve the above drawbacks, magazine thin solid film (Thin 5solid film) has been developed.
Films) 129.1985) 1 discloses a method for producing a broadband antireflection film by coating a substrate with a SiOg thin film having pores by a sol-gel method using tetraethoxysilane as a raw material.
しかしながら、上記したゾルゲル法により細孔を有する
Si0g膜を基体に被覆する方法は、テトラエトキシシ
ランの加水分解生成物を基体に塗布した後、加熱工程と
HF水溶液により多孔性を付与する工程とを必要とし被
膜を形成する工程が複雑である。さらに人体に危険なH
F水溶液を扱わなければならないという環境上の問題が
ある。本発明は上記した欠点がなく、広い波長域にわた
って光の反射が低減できる単層の反射防止膜およびその
形成方法を提供するものである。However, the method of coating a substrate with a SiOg film having pores using the above-mentioned sol-gel method requires a heating step and a step of imparting porosity with an HF aqueous solution after applying a hydrolysis product of tetraethoxysilane to the substrate. The process of forming the film is complicated. Furthermore, H is dangerous to the human body.
There is an environmental problem in that an F aqueous solution must be handled. The present invention provides a single-layer antireflection film that does not have the above-mentioned drawbacks and can reduce light reflection over a wide wavelength range, and a method for forming the same.
本発明は、一般式が(1)式で表わされるモノアルキル
トリアルコキシシランとポリエーテルと有機溶媒とを含
む溶液を基体表面に塗布し、前記モノアルキルトリアル
コキシシランの一部または全部を脱水縮合させた塗布膜
とし、その後前記ポリエーテルを前記塗布膜から有機溶
媒により溶出させて基体に反射防止性を有する膜を形成
する方法である。本発明にかかるモノアルキルトリアル
コキR−Si− (OR’)3 (1)
(式中Rは炭素数が1〜4のアルキル基で、R′は炭素
数1〜6のアルキル基)
804(C)Iz)うO+ fiH(2)(式中はに、
nは整数)
ジシランのアルキル基Rは、膜の機械的強度を強くする
うえからはメチル基、エチル基、プロピル基が好ましく
、とりわけメチル基が最も好ましい。In the present invention, a solution containing a monoalkyltrialkoxysilane whose general formula is represented by formula (1), a polyether, and an organic solvent is applied to the surface of a substrate, and part or all of the monoalkyltrialkoxysilane is dehydrated and condensed. In this method, the polyether is eluted from the coating film using an organic solvent to form a film having antireflection properties on the substrate. Monoalkyl trialkyl R-Si- (OR')3 (1) according to the present invention
(In the formula, R is an alkyl group having 1 to 4 carbon atoms, and R' is an alkyl group having 1 to 6 carbon atoms.) 804(C)Iz)O+ fiH(2) (in the formula,
(n is an integer) The alkyl group R of disilane is preferably a methyl group, an ethyl group, or a propyl group from the viewpoint of increasing the mechanical strength of the membrane, and particularly a methyl group is most preferable.
また、アルキル基R′の炭素の数は、加水分解および脱
水縮合の反応速度と関係し、炭素数が小さい程反応速度
が早く、すなわち高分子化が短時間に行われるので、モ
ノアルキルトリアルコキシシランのアルコキシ基として
は、メトキシ基、エトキシ基、プロポキシ基が好ましい
。In addition, the number of carbon atoms in the alkyl group R' is related to the reaction rate of hydrolysis and dehydration condensation. The alkoxy group of the silane is preferably a methoxy group, an ethoxy group, or a propoxy group.
また、上記したモノアルキルトリアルコキシシランにジ
メチルジェトキシシラン、ジメチルジメトキシシランな
どのジアルキルジアルコキシシランやトリメチルモノメ
トキシシラン、トリメチルモノエトキシシランなどのジ
トリメチルモノアルコキシシランを添加することができ
る。Furthermore, dialkyldialkoxysilanes such as dimethyljethoxysilane and dimethyldimethoxysilane, and ditrimethylmonoalkoxysilanes such as trimethylmonomethoxysilane and trimethylmonoethoxysilane can be added to the above-mentioned monoalkyltrialkoxysilanes.
本発明にかかるポリエーテルは一般式(2)で表わされ
、kがそれぞれ2,3.4であるポリエチレングリコー
ル、ポリプロピレングリコール、ポリテトラメチレング
リコールが、有機溶媒に対してよく溶けることから好ま
しく、とりわけポリエチレングリコールが好ましい。The polyether according to the present invention is preferably polyethylene glycol, polypropylene glycol, or polytetramethylene glycol, which is represented by the general formula (2) and has k of 2 and 3.4, respectively, because they are well soluble in organic solvents. Particularly preferred is polyethylene glycol.
上記したポリエーテルの重合度を示すnの値は。What is the value of n indicating the degree of polymerization of the polyether mentioned above?
200〜6.000が好ましく、さらに300〜2,0
00が最も好ましい。重合度が200より小さいと膜に
多孔性が生じにくくなり膜の屈折率を低下させることが
できなくなる。一方重合度が6,000を越えると有機
溶媒に溶解しにくくなり、溶液を調整しにくくなって、
均一に基体表面に前記溶液を塗布することが困難になる
ので好ましくない。膜中に生ずる多数の孔の大きさを大
きくしたい場合は、大きい重合度のポリエーテルが選ば
れる。また、膜中に孔が占める体積比率は、モノアルキ
ルトリアルコキシシランとポリエーテルの比率を変える
ことにより調整される。200 to 6.000 is preferable, more preferably 300 to 2.0
00 is most preferred. If the degree of polymerization is less than 200, porosity will hardly occur in the film, making it impossible to lower the refractive index of the film. On the other hand, if the degree of polymerization exceeds 6,000, it becomes difficult to dissolve in organic solvents, making it difficult to prepare solutions.
This is not preferred because it becomes difficult to uniformly apply the solution to the surface of the substrate. If it is desired to increase the size of the large number of pores produced in the membrane, polyethers with a high degree of polymerization are selected. Further, the volume ratio occupied by pores in the membrane is adjusted by changing the ratio of monoalkyltrialkoxysilane to polyether.
本発明にかかる有機溶媒としては、−価、二価。The organic solvent according to the present invention is -valent or divalent.
三価のアルコール類、ケトン類、エステル類、エーテル
類、セルソルブ類、ハロゲン化物、カルボン酸類、芳香
族化合物、エーテル、ケトンアルコールなどの有機溶媒
がもちいられる。また、これらの一種または二種以上を
混合して用いることもできる。とくに、メタノール、エ
タノール、プロパツール、イソプロパツール、ブタノー
ル等の低級アルコール;メチルセルソルブ、エチルセル
ソルブ、ブチルセルソルブ、蟻酸、酢酸、プロピオン酸
等の低級アルキルカルボン酸、トルエン、キシレン、酢
酸エチル、酢酸ブチル、及びアセトン、メチルエチルケ
トン、メチルイソブチルケトンなどのケトンを単独もし
くは混合溶剤として用いることが前記したポリエーテル
をよく溶かすうえで好ましい。Organic solvents such as trihydric alcohols, ketones, esters, ethers, cellosolves, halides, carboxylic acids, aromatic compounds, ethers, and ketone alcohols are used. Further, one kind or a mixture of two or more kinds thereof can also be used. In particular, lower alcohols such as methanol, ethanol, propatool, isopropanol, butanol; methyl cellosolve, ethyl cellosolve, butyl cellosolve, lower alkyl carboxylic acids such as formic acid, acetic acid, propionic acid, toluene, xylene, ethyl acetate. , butyl acetate, and ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone are preferably used alone or as a mixed solvent in order to dissolve the polyether well.
また、モノアルキルトリアルコキシシラン、ポリエーテ
ルおよび有機溶媒からなる溶液に、前記シラン化合物の
脱水縮合反応を速進させる触媒として、塩酸、硫酸、硝
酸、燐酸などの無機酸や酢酸などの有機酸、さらに水な
どを添加することができる。In addition, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid, and organic acids such as acetic acid, Furthermore, water etc. can be added.
上記した溶液を基体表面に塗布することにより、シラン
化合物の一部または全部を脱水縮合させるとともに前記
溶媒を蒸発逸散させて、基体上にゲル状の塗布膜が形成
される。得られた主としてシラン化合物の脱水縮合生成
物とポリエーテルからなる塗布膜を、前記した有機溶媒
に接触させることにより、ポリエーテルのみを有機溶媒
内へ溶出させて、膜中に多孔を有する膜が形成される。By applying the above solution to the surface of the substrate, part or all of the silane compound is dehydrated and condensed, and the solvent is evaporated and evaporated to form a gel-like coating film on the substrate. By bringing the obtained coating film mainly consisting of a dehydration condensation product of a silane compound and polyether into contact with the above-mentioned organic solvent, only the polyether is eluted into the organic solvent, and a film having pores is formed in the film. It is formed.
また、本発明は、一般式が(1)弐で表わされるモノア
ルキルトリアルコキシシランとポリエーテルと有機溶媒
とを含む溶液を基体に塗布し、前記モノアルキルトリア
ルコキシシランの一部または全部の脱水縮合させた塗布
膜とし、前記塗布膜を加熱することにより基体に反射防
止性能を有する膜を形成する方法である。加熱すること
により塗布膜中の有機成分をほぼ完全に分解除去するに
は、250°C以上、好ましくは300°C以上に加熱
することが好ましい。前記したポリエーテルは、ポリエ
チレングリコール、ポリプロピレングリコール、ポリテ
トラメチレングリコールが熱分解により、有機残渣を膜
中にほとんど生じさせないので好ましく、とくにポリエ
チレングリコールが好ましい。有機溶媒は前記した、種
々のアルコール、酸、ケトン、アルデヒド、エーテル、
ケトンアルコールを用いることができる。The present invention also provides a method for applying a solution containing a monoalkyltrialkoxysilane represented by the general formula (1) 2, a polyether, and an organic solvent to a substrate, and dehydrating part or all of the monoalkyltrialkoxysilane. This is a method of forming a film having antireflection properties on a substrate by forming a condensed coating film and heating the coating film. In order to almost completely decompose and remove the organic components in the coating film by heating, it is preferable to heat to 250°C or higher, preferably 300°C or higher. Among the polyethers mentioned above, polyethylene glycol, polypropylene glycol, and polytetramethylene glycol are preferable because they hardly produce organic residues in the film through thermal decomposition, and polyethylene glycol is particularly preferable. Organic solvents include various alcohols, acids, ketones, aldehydes, ethers,
Ketone alcohols can be used.
また、本発明は、モノアルキルトリアルコキシシランの
一部または全部を加水分解および脱水縮合した生成物か
らなる多孔性の膜であって、前記膜の多孔性を一般式(
1)で表わされるモノアルキルトリアルコキシシランと
ポリエーテルと有機溶媒とを含む溶液を基体表面に被覆
した塗布膜から前記ポリエーテルを有機溶媒により溶出
した多孔性の反射防止膜である。ポリエーテルを塗布膜
から溶出させる有機溶媒としては、前記したアルコール
、ケトン、エステル、セルソルブ、芳香族化合物などの
溶解性のあるものであれば、とくに限定されない。The present invention also provides a porous membrane made of a product obtained by hydrolysis and dehydration condensation of part or all of a monoalkyltrialkoxysilane, the porosity of the membrane being expressed by the general formula (
This is a porous antireflection film obtained by dissolving the polyether with an organic solvent from a coating film in which the surface of a substrate is coated with a solution containing a monoalkyltrialkoxysilane represented by 1), a polyether, and an organic solvent. The organic solvent for dissolving the polyether from the coating film is not particularly limited as long as it is soluble in the above-mentioned alcohols, ketones, esters, cellosolves, aromatic compounds, and the like.
また、本発明は、モノアルキルトリアルコキシシランの
一部または全部を脱水縮合させた生成物を熱分解するこ
とにより得られる多孔性の酸化珪素からなる膜であって
、前記脱水縮合させた生成物を一般式(1)で表わされ
るモノアルキルトリアルコキシシランとポリエーテルと
有機溶媒とを含む基体表面に被覆した塗布膜から生成さ
せた多孔性の反射防止膜である。The present invention also provides a membrane made of porous silicon oxide obtained by thermally decomposing a product obtained by dehydrating and condensing a part or all of a monoalkyltrialkoxysilane, wherein This is a porous antireflection film produced from a coating film coated on the surface of a substrate containing a monoalkyltrialkoxysilane represented by the general formula (1), polyether, and an organic solvent.
本発明の反射防止膜は、膜中に数多くの微細な多くの空
孔を有するので、膜の屈折率が小さい。Since the antireflection film of the present invention has many fine pores in the film, the refractive index of the film is small.
膜の空孔率は20〜70%であることが、膜の機械的強
度を確保し、かつ、反射率を低くする上で好ましい。空
孔率が20%より小さいと膜の屈折率が1.3より大き
くなり、基体の反射率を低くすることができない。空孔
が占める体積が70%より大きくなると、膜の機械的強
度がもろくなるので好ましくない。The porosity of the film is preferably 20 to 70% in order to ensure the mechanical strength of the film and to lower the reflectance. If the porosity is less than 20%, the refractive index of the film will be greater than 1.3, making it impossible to lower the reflectance of the substrate. If the volume occupied by pores exceeds 70%, the mechanical strength of the membrane becomes brittle, which is not preferable.
本発明により、得られる反射防止膜が、広帯域で低い反
射を示す理由は、明確ではないが膜中に占める空孔の体
積比が基体表面側から大気側に向って連続的に大きくな
り、したがって、基体表面から大気側に向って屈折率が
小さくなっていることによると考えられる。The reason why the antireflection film obtained by the present invention exhibits low reflection over a wide band is not clear, but the volume ratio of pores in the film increases continuously from the substrate surface side toward the atmosphere. This is thought to be due to the fact that the refractive index decreases from the substrate surface toward the atmosphere.
本発明に用いられる基体としては、ガラス板、プラスチ
ック板等がある。ガラス板としては、石英ガラス、ソー
ダライムガラス、ボロシリケートガラスなどのガラス板
が使用できる。プラスチック板としては、PCポリカポ
ネート、アクリルなどのプラスチック板が使用できる。Substrates used in the present invention include glass plates, plastic plates, and the like. As the glass plate, a glass plate such as quartz glass, soda lime glass, or borosilicate glass can be used. As the plastic plate, a plastic plate such as PC polycarbonate or acrylic can be used.
〔作 用]
本発明にかかる塗布膜に含まれるポリエーテルは、有機
溶媒により溶出されることにより、あるいは加熱により
熱分解されることにより膜を多孔性にする。[Function] The polyether contained in the coating film according to the present invention makes the film porous by being eluted with an organic solvent or thermally decomposed by heating.
本発明に用いられるモノアルキルトリアルコキシシラン
は、脱水縮合することにより、または、加熱されて熱分
解することにより反射防止膜の生成分となる。The monoalkyltrialkoxysilane used in the present invention becomes a product of the antireflection film by dehydration condensation or by being heated and thermally decomposed.
膜中の空孔は、膜の屈折率を低下させるとともに、空孔
の体積比が基板から大気側に向って大きくなっているの
で、広帯域で低い反射率を基体に付与する。The pores in the film lower the refractive index of the film, and since the volume ratio of the pores increases from the substrate toward the atmosphere, it imparts low reflectance to the substrate over a wide band.
実施例1
モノメチルトリエトキシシランを17.83gPP1し
、これにエタノールを13.82 g及び1−ブタノー
ルを22.24 gいれて混合し、均一溶液とする。Example 1 17.83 g PP1 of monomethyltriethoxysilane was mixed with 13.82 g of ethanol and 22.24 g of 1-butanol to form a homogeneous solution.
この溶液に、水を10.8 g、燐酸を0.49 g加
え、さらに60分間攪拌した。この溶液に13.82
gのエタノール、22.24 gのブタノール及び3.
3gのポリエチレングリコールを加えさらに10分間の
撹拌を行ったものを塗布溶液とした。To this solution, 10.8 g of water and 0.49 g of phosphoric acid were added, and the mixture was further stirred for 60 minutes. 13.82 in this solution
g of ethanol, 22.24 g of butanol and 3.
A coating solution was obtained by adding 3 g of polyethylene glycol and stirring for an additional 10 minutes.
この塗布溶液中へ、厚さ1.1皿、直径50mmの円板
状の石英ガラス板を浸漬した後ゆっくりと引き上げて、
フロートガラス板上に塗布膜を形成した。その後この塗
布膜をつけたガラス板を室温において5分間乾燥し、3
50 ’Cに保ったオーブン中で15分間熱処理を行っ
た。A disk-shaped quartz glass plate with a thickness of 1.1 plates and a diameter of 50 mm was dipped into this coating solution, and then slowly pulled up.
A coating film was formed on a float glass plate. After that, the glass plate with this coating film was dried at room temperature for 5 minutes, and
Heat treatment was performed for 15 minutes in an oven maintained at 50'C.
この熱処理により、塗布膜中に分散していたポリエチレ
ングリコールは完全に分解・燃焼してしまい、塗布膜は
透明な700nmの厚みの膜となった。By this heat treatment, the polyethylene glycol dispersed in the coating film was completely decomposed and burned, and the coating film became a transparent film with a thickness of 700 nm.
得られたサンプルの分光反射特性を測定したところ、第
1図の実線に示すように350〜850nmの範囲で分
光反射率が0.7%以下となる優れた反射防止特性を示
した。When the spectral reflection characteristics of the obtained sample were measured, it showed excellent antireflection characteristics with a spectral reflectance of 0.7% or less in the range of 350 to 850 nm, as shown by the solid line in FIG.
実施例2
実施例1と全く同様にしてフロートガラス板上に塗布膜
を形成した。常温で乾燥後このゲル膜を被覆したガラス
板をエタノール中に漬けてポリエーテルを塗布膜から溶
出除去した。常温で乾燥後得られたサンプルの分光反射
特性を測定したところ、第1図の点線に示す分光反射特
性が得られた。Example 2 A coating film was formed on a float glass plate in exactly the same manner as in Example 1. After drying at room temperature, the glass plate coated with this gel film was immersed in ethanol to remove polyether by elution from the coated film. When the spectral reflection characteristics of the sample obtained after drying at room temperature were measured, the spectral reflection characteristics shown by the dotted line in FIG. 1 were obtained.
実施例1.2で得られたサンプルは、いずれも可視域全
体にわたって低い反射率を示すことが判る。It can be seen that the samples obtained in Example 1.2 all exhibit low reflectance over the entire visible range.
〔発明の効果]
本発明によれば、広い波長範囲にわたって低い反射率を
有する反射防止膜を、多層構成にすることなく単層で得
ることができる。したがって、広帯域の反射防止膜を真
空蒸着装置などの高価な設備を必要とすることなく形成
することができる。[Effects of the Invention] According to the present invention, an antireflection film having low reflectance over a wide wavelength range can be obtained in a single layer without having to have a multilayer structure. Therefore, a broadband antireflection film can be formed without requiring expensive equipment such as a vacuum evaporation device.
また、本発明の反射防止膜の形成方法によれば、人体に
有害なHF水溶液を用いることがないので、第1図は本
発明の方法により得られた反射防止膜の特性を示す図で
ある。Furthermore, according to the method for forming an antireflection film of the present invention, an HF aqueous solution that is harmful to the human body is not used, so FIG. 1 is a diagram showing the characteristics of the antireflection film obtained by the method of the present invention. .
手続補正書
平成2年3月20日
1、事件の表示
特願平1−342368号
2、発明の名称
反射防止膜およびその形成方法
3、補正をする者
事件との関係 特許出願人
住所 大阪市中央区道修町3丁目5番11号名称
(400) 日本板硝子株式会社代表者 中島達二
4、代理人
住所 東京都港区新橋5丁目11番3号新橋住友ビル
日本板硝子株式会社 特許部内
7、補正の内容
(1)明細書第6頁第2行〜第3行の「ジトリメチルモ
ノアルコキシシラン」を「トリアルキルモノアルコキシ
シラン」と訂正する。Procedural amendment dated March 20, 1990 1. Indication of the case Japanese Patent Application No. 1-342368 2. Name of the invention Anti-reflective film and its formation method 3. Person making the amendment Relationship to the case Patent applicant address Osaka City 3-5-11 Doshomachi, Chuo-ku Name
(400) Nippon Sheet Glass Co., Ltd. Representative Tatsuji Nakajima 4, Agent Address Shinbashi Sumitomo Building, 5-11-3 Shinbashi, Minato-ku, Tokyo Nippon Sheet Glass Co., Ltd. Patent Department 7 Contents of amendment (1) Specification page 6 Correct "ditrimethylmonoalkoxysilane" in lines 2 to 3 to "trialkylmonoalkoxysilane".
(2)明細書第6頁第15行の「調整」を「調製」と訂
正する。(2) "Adjustment" on page 6, line 15 of the specification is corrected to "preparation."
(3)明細書第8頁第1行の「速進」を「促進」と訂正
する。(3) "Accelerate" in the first line of page 8 of the specification is corrected to "promote."
6、補正の対象6. Subject of correction
Claims (1)
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に塗布し、前記モノアルキルトリアルコキシ
シランの一部または全部を脱水縮合させた塗布膜とし、
その後前記ポリエーテルを前記塗布膜から有機溶媒によ
り溶出させることにより、基体に反射防止性能を有する
膜を形成する方法 R−Si−(OR′)_3(1) (式中Rは炭素数が1〜4のアルキル基、R′は炭素数
が1〜6のアルキル基) 2)一般式が(1)式で表わされるモノアルキルトリア
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に塗布し、前記モノアルキルトリアルコキシ
シランの一部または全部を脱水縮合させた塗布膜とし、
前記塗布膜を加熱することにより、基体に反射防止性能
を有する膜を形成する方法 R−Si−(OR′)_3(1) (式中Rは炭素数が1〜4のアルキル基、R′は炭素数
が1〜6のアルキル基) 3)多孔性の膜であって、前記膜の多孔性を一般式(1
)で表わされるモノアルキルトリアルコキシシランとポ
リエーテルと有機溶媒とを含む溶液を基体表面に被覆し
たモノアルキルトリアルコキシシランの一部または全部
の脱水縮合物を含む塗布膜から、前記ポリエーテルを溶
出させて形成したことを特徴とする多孔性の反射防止膜 R−Si−(OR′)_3(1) (Rは炭素数が1〜4のアルキル基、R′は炭素数が1
〜6のアルキル基) 4)多孔性の酸化珪素からなる膜であって、前記膜の多
孔性を、一般式(1)で表わされるモノアルキルトリア
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に被覆したモノアルキルトリアルコキシシラ
ンの一部または全部の脱水縮合物を含む塗布膜を加熱し
、前記塗布膜中の有機成分を熱分解により除去すること
により形成した反射防止膜 R−Si−(OR′)_3(1) (Rは炭素数が1〜4のアルキル基、R′は炭素数が1
〜6のアルキル基)[Claims] 1) A solution containing a monoalkyltrialkoxysilane whose general formula is represented by the formula (1), a polyether, and an organic solvent is applied to the surface of a substrate, and a part of the monoalkyltrialkoxysilane or A coating film is obtained by dehydrating and condensing the entire
Thereafter, the polyether is eluted from the coating film with an organic solvent to form a film having antireflection properties on the substrate R-Si-(OR')_3(1) ~4 alkyl group, R' is an alkyl group having 1 to 6 carbon atoms) 2) A solution containing a monoalkyltrialkoxysilane whose general formula is represented by formula (1), a polyether, and an organic solvent is applied to the surface of the substrate. a coating film in which a part or all of the monoalkyltrialkoxysilane is dehydrated and condensed;
A method of forming a film having antireflection properties on a substrate by heating the coating film R-Si-(OR')_3(1) (wherein R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 to 6 carbon atoms) 3) A porous membrane, the porosity of the membrane is expressed by the general formula (1)
) The polyether is eluted from a coating film containing a dehydrated condensate of part or all of the monoalkyltrialkoxysilane, which is coated on the surface of a substrate with a solution containing the monoalkyltrialkoxysilane represented by the formula, polyether, and an organic solvent. Porous antireflection film R-Si-(OR')_3(1) (R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 to 4 carbon atoms, and R' is an alkyl group having 1 to 4 carbon atoms.
-6 alkyl group) 4) A film made of porous silicon oxide, the porosity of the film being determined by a solution containing a monoalkyltrialkoxysilane represented by the general formula (1), a polyether, and an organic solvent. An antireflection film R- is formed by heating a coating film containing a dehydrated condensate of part or all of a monoalkyltrialkoxysilane coated on a substrate surface, and removing organic components in the coating film by thermal decomposition. Si-(OR')_3(1) (R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 carbon number
~6 alkyl group)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1342368A JP2913715B2 (en) | 1989-12-28 | 1989-12-28 | Antireflection film and method of forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1342368A JP2913715B2 (en) | 1989-12-28 | 1989-12-28 | Antireflection film and method of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03199043A true JPH03199043A (en) | 1991-08-30 |
JP2913715B2 JP2913715B2 (en) | 1999-06-28 |
Family
ID=18353189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1342368A Expired - Lifetime JP2913715B2 (en) | 1989-12-28 | 1989-12-28 | Antireflection film and method of forming the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2913715B2 (en) |
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