JPH03199043A - Antireflection film and forming method thereof - Google Patents

Antireflection film and forming method thereof

Info

Publication number
JPH03199043A
JPH03199043A JP1342368A JP34236889A JPH03199043A JP H03199043 A JPH03199043 A JP H03199043A JP 1342368 A JP1342368 A JP 1342368A JP 34236889 A JP34236889 A JP 34236889A JP H03199043 A JPH03199043 A JP H03199043A
Authority
JP
Japan
Prior art keywords
film
polyether
alkyl group
organic solvent
monoalkyltrialkoxysilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1342368A
Other languages
Japanese (ja)
Other versions
JP2913715B2 (en
Inventor
Yoshihiro Matsuno
好洋 松野
Atsunori Matsuda
厚範 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP1342368A priority Critical patent/JP2913715B2/en
Publication of JPH03199043A publication Critical patent/JPH03199043A/en
Application granted granted Critical
Publication of JP2913715B2 publication Critical patent/JP2913715B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain antireflection film, which can reduce the reflection of light over wide wave range, by a method wherein solution containing specified monoalkyl trialkoxysilane, polyether and organic solvent is applied onto the surface of base so as to elute the polyether after the dehydration condensation of some part or all of the monoalkyl trialkoxysilane. CONSTITUTION:Solution containing monoalkyl trialkoxysilane represented by the formula (I), in which R is alkyl group having the number of carbon atoms of 1-4 and R' is alkyl group having the number of carbon of 1-6, polyether and organic solvent is applied onto the surface of base so as to form coated film through the dehydration condensation of some part or all of the monoalkyl trialkoxysilane and, after that, elute the polyether by means of organic solvent from the coated film in order to form antireflection film on the base. As the preferable alkoxy group of the monoalkyl trialkoxysilane, methoxy group, ethoxy group and propoxy group. The preferable polyether is polyethylene glycol having the degree of polymerization of 200-6,000. As the organic solvent, alcohols, ketones, esters or the like is used.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、反射防止膜およびその形成方法に関するもの
で、とりわけ広い波長域にわたって低い反射率を基体に
付与できる単層の反射防止膜およびその形成方法に関す
る。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an anti-reflection film and a method for forming the same, and in particular to a single-layer anti-reflection film that can impart low reflectance to a substrate over a wide wavelength range and its method. Regarding the forming method.

〔従来の技術〕[Conventional technology]

従来、光学部品、眼鏡、デイスプレィ装置などにコーテ
ィングされる単層の反射防止膜としては、MgFz蒸着
膜が知られている。しかしながらMgF z蒸着膜の単
層膜は広い波長域にわたって低い反射率が得られないと
いう欠点をもっている。上記の欠点を解決する技術とし
て、雑誌シンソリッドフィルム(Thin 5olid
 Films)129.1985) 1には、テトラエ
トキシシランを原料に用いて、ゾルゲル法により細孔を
有するSi0g薄膜を基体に被覆し、広帯域の反射防止
膜を製造する方法が開示されている。
BACKGROUND ART Conventionally, a MgFz vapor-deposited film is known as a single-layer antireflection film coated on optical parts, eyeglasses, display devices, and the like. However, the single layer MgFz vapor-deposited film has the drawback that low reflectance cannot be obtained over a wide wavelength range. As a technology to solve the above drawbacks, magazine thin solid film (Thin 5solid film) has been developed.
Films) 129.1985) 1 discloses a method for producing a broadband antireflection film by coating a substrate with a SiOg thin film having pores by a sol-gel method using tetraethoxysilane as a raw material.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記したゾルゲル法により細孔を有する
Si0g膜を基体に被覆する方法は、テトラエトキシシ
ランの加水分解生成物を基体に塗布した後、加熱工程と
HF水溶液により多孔性を付与する工程とを必要とし被
膜を形成する工程が複雑である。さらに人体に危険なH
F水溶液を扱わなければならないという環境上の問題が
ある。本発明は上記した欠点がなく、広い波長域にわた
って光の反射が低減できる単層の反射防止膜およびその
形成方法を提供するものである。
However, the method of coating a substrate with a SiOg film having pores using the above-mentioned sol-gel method requires a heating step and a step of imparting porosity with an HF aqueous solution after applying a hydrolysis product of tetraethoxysilane to the substrate. The process of forming the film is complicated. Furthermore, H is dangerous to the human body.
There is an environmental problem in that an F aqueous solution must be handled. The present invention provides a single-layer antireflection film that does not have the above-mentioned drawbacks and can reduce light reflection over a wide wavelength range, and a method for forming the same.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、一般式が(1)式で表わされるモノアルキル
トリアルコキシシランとポリエーテルと有機溶媒とを含
む溶液を基体表面に塗布し、前記モノアルキルトリアル
コキシシランの一部または全部を脱水縮合させた塗布膜
とし、その後前記ポリエーテルを前記塗布膜から有機溶
媒により溶出させて基体に反射防止性を有する膜を形成
する方法である。本発明にかかるモノアルキルトリアル
コキR−Si−  (OR’)3       (1)
(式中Rは炭素数が1〜4のアルキル基で、R′は炭素
数1〜6のアルキル基) 804(C)Iz)うO+ fiH(2)(式中はに、
nは整数) ジシランのアルキル基Rは、膜の機械的強度を強くする
うえからはメチル基、エチル基、プロピル基が好ましく
、とりわけメチル基が最も好ましい。
In the present invention, a solution containing a monoalkyltrialkoxysilane whose general formula is represented by formula (1), a polyether, and an organic solvent is applied to the surface of a substrate, and part or all of the monoalkyltrialkoxysilane is dehydrated and condensed. In this method, the polyether is eluted from the coating film using an organic solvent to form a film having antireflection properties on the substrate. Monoalkyl trialkyl R-Si- (OR')3 (1) according to the present invention
(In the formula, R is an alkyl group having 1 to 4 carbon atoms, and R' is an alkyl group having 1 to 6 carbon atoms.) 804(C)Iz)O+ fiH(2) (in the formula,
(n is an integer) The alkyl group R of disilane is preferably a methyl group, an ethyl group, or a propyl group from the viewpoint of increasing the mechanical strength of the membrane, and particularly a methyl group is most preferable.

また、アルキル基R′の炭素の数は、加水分解および脱
水縮合の反応速度と関係し、炭素数が小さい程反応速度
が早く、すなわち高分子化が短時間に行われるので、モ
ノアルキルトリアルコキシシランのアルコキシ基として
は、メトキシ基、エトキシ基、プロポキシ基が好ましい
In addition, the number of carbon atoms in the alkyl group R' is related to the reaction rate of hydrolysis and dehydration condensation. The alkoxy group of the silane is preferably a methoxy group, an ethoxy group, or a propoxy group.

また、上記したモノアルキルトリアルコキシシランにジ
メチルジェトキシシラン、ジメチルジメトキシシランな
どのジアルキルジアルコキシシランやトリメチルモノメ
トキシシラン、トリメチルモノエトキシシランなどのジ
トリメチルモノアルコキシシランを添加することができ
る。
Furthermore, dialkyldialkoxysilanes such as dimethyljethoxysilane and dimethyldimethoxysilane, and ditrimethylmonoalkoxysilanes such as trimethylmonomethoxysilane and trimethylmonoethoxysilane can be added to the above-mentioned monoalkyltrialkoxysilanes.

本発明にかかるポリエーテルは一般式(2)で表わされ
、kがそれぞれ2,3.4であるポリエチレングリコー
ル、ポリプロピレングリコール、ポリテトラメチレング
リコールが、有機溶媒に対してよく溶けることから好ま
しく、とりわけポリエチレングリコールが好ましい。
The polyether according to the present invention is preferably polyethylene glycol, polypropylene glycol, or polytetramethylene glycol, which is represented by the general formula (2) and has k of 2 and 3.4, respectively, because they are well soluble in organic solvents. Particularly preferred is polyethylene glycol.

上記したポリエーテルの重合度を示すnの値は。What is the value of n indicating the degree of polymerization of the polyether mentioned above?

200〜6.000が好ましく、さらに300〜2,0
00が最も好ましい。重合度が200より小さいと膜に
多孔性が生じにくくなり膜の屈折率を低下させることが
できなくなる。一方重合度が6,000を越えると有機
溶媒に溶解しにくくなり、溶液を調整しにくくなって、
均一に基体表面に前記溶液を塗布することが困難になる
ので好ましくない。膜中に生ずる多数の孔の大きさを大
きくしたい場合は、大きい重合度のポリエーテルが選ば
れる。また、膜中に孔が占める体積比率は、モノアルキ
ルトリアルコキシシランとポリエーテルの比率を変える
ことにより調整される。
200 to 6.000 is preferable, more preferably 300 to 2.0
00 is most preferred. If the degree of polymerization is less than 200, porosity will hardly occur in the film, making it impossible to lower the refractive index of the film. On the other hand, if the degree of polymerization exceeds 6,000, it becomes difficult to dissolve in organic solvents, making it difficult to prepare solutions.
This is not preferred because it becomes difficult to uniformly apply the solution to the surface of the substrate. If it is desired to increase the size of the large number of pores produced in the membrane, polyethers with a high degree of polymerization are selected. Further, the volume ratio occupied by pores in the membrane is adjusted by changing the ratio of monoalkyltrialkoxysilane to polyether.

本発明にかかる有機溶媒としては、−価、二価。The organic solvent according to the present invention is -valent or divalent.

三価のアルコール類、ケトン類、エステル類、エーテル
類、セルソルブ類、ハロゲン化物、カルボン酸類、芳香
族化合物、エーテル、ケトンアルコールなどの有機溶媒
がもちいられる。また、これらの一種または二種以上を
混合して用いることもできる。とくに、メタノール、エ
タノール、プロパツール、イソプロパツール、ブタノー
ル等の低級アルコール;メチルセルソルブ、エチルセル
ソルブ、ブチルセルソルブ、蟻酸、酢酸、プロピオン酸
等の低級アルキルカルボン酸、トルエン、キシレン、酢
酸エチル、酢酸ブチル、及びアセトン、メチルエチルケ
トン、メチルイソブチルケトンなどのケトンを単独もし
くは混合溶剤として用いることが前記したポリエーテル
をよく溶かすうえで好ましい。
Organic solvents such as trihydric alcohols, ketones, esters, ethers, cellosolves, halides, carboxylic acids, aromatic compounds, ethers, and ketone alcohols are used. Further, one kind or a mixture of two or more kinds thereof can also be used. In particular, lower alcohols such as methanol, ethanol, propatool, isopropanol, butanol; methyl cellosolve, ethyl cellosolve, butyl cellosolve, lower alkyl carboxylic acids such as formic acid, acetic acid, propionic acid, toluene, xylene, ethyl acetate. , butyl acetate, and ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone are preferably used alone or as a mixed solvent in order to dissolve the polyether well.

また、モノアルキルトリアルコキシシラン、ポリエーテ
ルおよび有機溶媒からなる溶液に、前記シラン化合物の
脱水縮合反応を速進させる触媒として、塩酸、硫酸、硝
酸、燐酸などの無機酸や酢酸などの有機酸、さらに水な
どを添加することができる。
In addition, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid, and organic acids such as acetic acid, Furthermore, water etc. can be added.

上記した溶液を基体表面に塗布することにより、シラン
化合物の一部または全部を脱水縮合させるとともに前記
溶媒を蒸発逸散させて、基体上にゲル状の塗布膜が形成
される。得られた主としてシラン化合物の脱水縮合生成
物とポリエーテルからなる塗布膜を、前記した有機溶媒
に接触させることにより、ポリエーテルのみを有機溶媒
内へ溶出させて、膜中に多孔を有する膜が形成される。
By applying the above solution to the surface of the substrate, part or all of the silane compound is dehydrated and condensed, and the solvent is evaporated and evaporated to form a gel-like coating film on the substrate. By bringing the obtained coating film mainly consisting of a dehydration condensation product of a silane compound and polyether into contact with the above-mentioned organic solvent, only the polyether is eluted into the organic solvent, and a film having pores is formed in the film. It is formed.

また、本発明は、一般式が(1)弐で表わされるモノア
ルキルトリアルコキシシランとポリエーテルと有機溶媒
とを含む溶液を基体に塗布し、前記モノアルキルトリア
ルコキシシランの一部または全部の脱水縮合させた塗布
膜とし、前記塗布膜を加熱することにより基体に反射防
止性能を有する膜を形成する方法である。加熱すること
により塗布膜中の有機成分をほぼ完全に分解除去するに
は、250°C以上、好ましくは300°C以上に加熱
することが好ましい。前記したポリエーテルは、ポリエ
チレングリコール、ポリプロピレングリコール、ポリテ
トラメチレングリコールが熱分解により、有機残渣を膜
中にほとんど生じさせないので好ましく、とくにポリエ
チレングリコールが好ましい。有機溶媒は前記した、種
々のアルコール、酸、ケトン、アルデヒド、エーテル、
ケトンアルコールを用いることができる。
The present invention also provides a method for applying a solution containing a monoalkyltrialkoxysilane represented by the general formula (1) 2, a polyether, and an organic solvent to a substrate, and dehydrating part or all of the monoalkyltrialkoxysilane. This is a method of forming a film having antireflection properties on a substrate by forming a condensed coating film and heating the coating film. In order to almost completely decompose and remove the organic components in the coating film by heating, it is preferable to heat to 250°C or higher, preferably 300°C or higher. Among the polyethers mentioned above, polyethylene glycol, polypropylene glycol, and polytetramethylene glycol are preferable because they hardly produce organic residues in the film through thermal decomposition, and polyethylene glycol is particularly preferable. Organic solvents include various alcohols, acids, ketones, aldehydes, ethers,
Ketone alcohols can be used.

また、本発明は、モノアルキルトリアルコキシシランの
一部または全部を加水分解および脱水縮合した生成物か
らなる多孔性の膜であって、前記膜の多孔性を一般式(
1)で表わされるモノアルキルトリアルコキシシランと
ポリエーテルと有機溶媒とを含む溶液を基体表面に被覆
した塗布膜から前記ポリエーテルを有機溶媒により溶出
した多孔性の反射防止膜である。ポリエーテルを塗布膜
から溶出させる有機溶媒としては、前記したアルコール
、ケトン、エステル、セルソルブ、芳香族化合物などの
溶解性のあるものであれば、とくに限定されない。
The present invention also provides a porous membrane made of a product obtained by hydrolysis and dehydration condensation of part or all of a monoalkyltrialkoxysilane, the porosity of the membrane being expressed by the general formula (
This is a porous antireflection film obtained by dissolving the polyether with an organic solvent from a coating film in which the surface of a substrate is coated with a solution containing a monoalkyltrialkoxysilane represented by 1), a polyether, and an organic solvent. The organic solvent for dissolving the polyether from the coating film is not particularly limited as long as it is soluble in the above-mentioned alcohols, ketones, esters, cellosolves, aromatic compounds, and the like.

また、本発明は、モノアルキルトリアルコキシシランの
一部または全部を脱水縮合させた生成物を熱分解するこ
とにより得られる多孔性の酸化珪素からなる膜であって
、前記脱水縮合させた生成物を一般式(1)で表わされ
るモノアルキルトリアルコキシシランとポリエーテルと
有機溶媒とを含む基体表面に被覆した塗布膜から生成さ
せた多孔性の反射防止膜である。
The present invention also provides a membrane made of porous silicon oxide obtained by thermally decomposing a product obtained by dehydrating and condensing a part or all of a monoalkyltrialkoxysilane, wherein This is a porous antireflection film produced from a coating film coated on the surface of a substrate containing a monoalkyltrialkoxysilane represented by the general formula (1), polyether, and an organic solvent.

本発明の反射防止膜は、膜中に数多くの微細な多くの空
孔を有するので、膜の屈折率が小さい。
Since the antireflection film of the present invention has many fine pores in the film, the refractive index of the film is small.

膜の空孔率は20〜70%であることが、膜の機械的強
度を確保し、かつ、反射率を低くする上で好ましい。空
孔率が20%より小さいと膜の屈折率が1.3より大き
くなり、基体の反射率を低くすることができない。空孔
が占める体積が70%より大きくなると、膜の機械的強
度がもろくなるので好ましくない。
The porosity of the film is preferably 20 to 70% in order to ensure the mechanical strength of the film and to lower the reflectance. If the porosity is less than 20%, the refractive index of the film will be greater than 1.3, making it impossible to lower the reflectance of the substrate. If the volume occupied by pores exceeds 70%, the mechanical strength of the membrane becomes brittle, which is not preferable.

本発明により、得られる反射防止膜が、広帯域で低い反
射を示す理由は、明確ではないが膜中に占める空孔の体
積比が基体表面側から大気側に向って連続的に大きくな
り、したがって、基体表面から大気側に向って屈折率が
小さくなっていることによると考えられる。
The reason why the antireflection film obtained by the present invention exhibits low reflection over a wide band is not clear, but the volume ratio of pores in the film increases continuously from the substrate surface side toward the atmosphere. This is thought to be due to the fact that the refractive index decreases from the substrate surface toward the atmosphere.

本発明に用いられる基体としては、ガラス板、プラスチ
ック板等がある。ガラス板としては、石英ガラス、ソー
ダライムガラス、ボロシリケートガラスなどのガラス板
が使用できる。プラスチック板としては、PCポリカポ
ネート、アクリルなどのプラスチック板が使用できる。
Substrates used in the present invention include glass plates, plastic plates, and the like. As the glass plate, a glass plate such as quartz glass, soda lime glass, or borosilicate glass can be used. As the plastic plate, a plastic plate such as PC polycarbonate or acrylic can be used.

〔作 用] 本発明にかかる塗布膜に含まれるポリエーテルは、有機
溶媒により溶出されることにより、あるいは加熱により
熱分解されることにより膜を多孔性にする。
[Function] The polyether contained in the coating film according to the present invention makes the film porous by being eluted with an organic solvent or thermally decomposed by heating.

本発明に用いられるモノアルキルトリアルコキシシラン
は、脱水縮合することにより、または、加熱されて熱分
解することにより反射防止膜の生成分となる。
The monoalkyltrialkoxysilane used in the present invention becomes a product of the antireflection film by dehydration condensation or by being heated and thermally decomposed.

膜中の空孔は、膜の屈折率を低下させるとともに、空孔
の体積比が基板から大気側に向って大きくなっているの
で、広帯域で低い反射率を基体に付与する。
The pores in the film lower the refractive index of the film, and since the volume ratio of the pores increases from the substrate toward the atmosphere, it imparts low reflectance to the substrate over a wide band.

〔実施例〕〔Example〕

実施例1 モノメチルトリエトキシシランを17.83gPP1し
、これにエタノールを13.82 g及び1−ブタノー
ルを22.24 gいれて混合し、均一溶液とする。
Example 1 17.83 g PP1 of monomethyltriethoxysilane was mixed with 13.82 g of ethanol and 22.24 g of 1-butanol to form a homogeneous solution.

この溶液に、水を10.8 g、燐酸を0.49 g加
え、さらに60分間攪拌した。この溶液に13.82 
gのエタノール、22.24 gのブタノール及び3.
3gのポリエチレングリコールを加えさらに10分間の
撹拌を行ったものを塗布溶液とした。
To this solution, 10.8 g of water and 0.49 g of phosphoric acid were added, and the mixture was further stirred for 60 minutes. 13.82 in this solution
g of ethanol, 22.24 g of butanol and 3.
A coating solution was obtained by adding 3 g of polyethylene glycol and stirring for an additional 10 minutes.

この塗布溶液中へ、厚さ1.1皿、直径50mmの円板
状の石英ガラス板を浸漬した後ゆっくりと引き上げて、
フロートガラス板上に塗布膜を形成した。その後この塗
布膜をつけたガラス板を室温において5分間乾燥し、3
50 ’Cに保ったオーブン中で15分間熱処理を行っ
た。
A disk-shaped quartz glass plate with a thickness of 1.1 plates and a diameter of 50 mm was dipped into this coating solution, and then slowly pulled up.
A coating film was formed on a float glass plate. After that, the glass plate with this coating film was dried at room temperature for 5 minutes, and
Heat treatment was performed for 15 minutes in an oven maintained at 50'C.

この熱処理により、塗布膜中に分散していたポリエチレ
ングリコールは完全に分解・燃焼してしまい、塗布膜は
透明な700nmの厚みの膜となった。
By this heat treatment, the polyethylene glycol dispersed in the coating film was completely decomposed and burned, and the coating film became a transparent film with a thickness of 700 nm.

得られたサンプルの分光反射特性を測定したところ、第
1図の実線に示すように350〜850nmの範囲で分
光反射率が0.7%以下となる優れた反射防止特性を示
した。
When the spectral reflection characteristics of the obtained sample were measured, it showed excellent antireflection characteristics with a spectral reflectance of 0.7% or less in the range of 350 to 850 nm, as shown by the solid line in FIG.

実施例2 実施例1と全く同様にしてフロートガラス板上に塗布膜
を形成した。常温で乾燥後このゲル膜を被覆したガラス
板をエタノール中に漬けてポリエーテルを塗布膜から溶
出除去した。常温で乾燥後得られたサンプルの分光反射
特性を測定したところ、第1図の点線に示す分光反射特
性が得られた。
Example 2 A coating film was formed on a float glass plate in exactly the same manner as in Example 1. After drying at room temperature, the glass plate coated with this gel film was immersed in ethanol to remove polyether by elution from the coated film. When the spectral reflection characteristics of the sample obtained after drying at room temperature were measured, the spectral reflection characteristics shown by the dotted line in FIG. 1 were obtained.

実施例1.2で得られたサンプルは、いずれも可視域全
体にわたって低い反射率を示すことが判る。
It can be seen that the samples obtained in Example 1.2 all exhibit low reflectance over the entire visible range.

〔発明の効果] 本発明によれば、広い波長範囲にわたって低い反射率を
有する反射防止膜を、多層構成にすることなく単層で得
ることができる。したがって、広帯域の反射防止膜を真
空蒸着装置などの高価な設備を必要とすることなく形成
することができる。
[Effects of the Invention] According to the present invention, an antireflection film having low reflectance over a wide wavelength range can be obtained in a single layer without having to have a multilayer structure. Therefore, a broadband antireflection film can be formed without requiring expensive equipment such as a vacuum evaporation device.

また、本発明の反射防止膜の形成方法によれば、人体に
有害なHF水溶液を用いることがないので、第1図は本
発明の方法により得られた反射防止膜の特性を示す図で
ある。
Furthermore, according to the method for forming an antireflection film of the present invention, an HF aqueous solution that is harmful to the human body is not used, so FIG. 1 is a diagram showing the characteristics of the antireflection film obtained by the method of the present invention. .

手続補正書 平成2年3月20日 1、事件の表示 特願平1−342368号 2、発明の名称 反射防止膜およびその形成方法 3、補正をする者 事件との関係  特許出願人 住所  大阪市中央区道修町3丁目5番11号名称  
(400)  日本板硝子株式会社代表者 中島達二 4、代理人 住所 東京都港区新橋5丁目11番3号新橋住友ビル 日本板硝子株式会社 特許部内 7、補正の内容 (1)明細書第6頁第2行〜第3行の「ジトリメチルモ
ノアルコキシシラン」を「トリアルキルモノアルコキシ
シラン」と訂正する。
Procedural amendment dated March 20, 1990 1. Indication of the case Japanese Patent Application No. 1-342368 2. Name of the invention Anti-reflective film and its formation method 3. Person making the amendment Relationship to the case Patent applicant address Osaka City 3-5-11 Doshomachi, Chuo-ku Name
(400) Nippon Sheet Glass Co., Ltd. Representative Tatsuji Nakajima 4, Agent Address Shinbashi Sumitomo Building, 5-11-3 Shinbashi, Minato-ku, Tokyo Nippon Sheet Glass Co., Ltd. Patent Department 7 Contents of amendment (1) Specification page 6 Correct "ditrimethylmonoalkoxysilane" in lines 2 to 3 to "trialkylmonoalkoxysilane".

(2)明細書第6頁第15行の「調整」を「調製」と訂
正する。
(2) "Adjustment" on page 6, line 15 of the specification is corrected to "preparation."

(3)明細書第8頁第1行の「速進」を「促進」と訂正
する。
(3) "Accelerate" in the first line of page 8 of the specification is corrected to "promote."

6、補正の対象6. Subject of correction

Claims (1)

【特許請求の範囲】 1)一般式が(1)式で表わされるモノアルキルトリア
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に塗布し、前記モノアルキルトリアルコキシ
シランの一部または全部を脱水縮合させた塗布膜とし、
その後前記ポリエーテルを前記塗布膜から有機溶媒によ
り溶出させることにより、基体に反射防止性能を有する
膜を形成する方法 R−Si−(OR′)_3(1) (式中Rは炭素数が1〜4のアルキル基、R′は炭素数
が1〜6のアルキル基) 2)一般式が(1)式で表わされるモノアルキルトリア
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に塗布し、前記モノアルキルトリアルコキシ
シランの一部または全部を脱水縮合させた塗布膜とし、
前記塗布膜を加熱することにより、基体に反射防止性能
を有する膜を形成する方法 R−Si−(OR′)_3(1) (式中Rは炭素数が1〜4のアルキル基、R′は炭素数
が1〜6のアルキル基) 3)多孔性の膜であって、前記膜の多孔性を一般式(1
)で表わされるモノアルキルトリアルコキシシランとポ
リエーテルと有機溶媒とを含む溶液を基体表面に被覆し
たモノアルキルトリアルコキシシランの一部または全部
の脱水縮合物を含む塗布膜から、前記ポリエーテルを溶
出させて形成したことを特徴とする多孔性の反射防止膜 R−Si−(OR′)_3(1) (Rは炭素数が1〜4のアルキル基、R′は炭素数が1
〜6のアルキル基) 4)多孔性の酸化珪素からなる膜であって、前記膜の多
孔性を、一般式(1)で表わされるモノアルキルトリア
ルコキシシランとポリエーテルと有機溶媒とを含む溶液
を基体表面に被覆したモノアルキルトリアルコキシシラ
ンの一部または全部の脱水縮合物を含む塗布膜を加熱し
、前記塗布膜中の有機成分を熱分解により除去すること
により形成した反射防止膜 R−Si−(OR′)_3(1) (Rは炭素数が1〜4のアルキル基、R′は炭素数が1
〜6のアルキル基)
[Claims] 1) A solution containing a monoalkyltrialkoxysilane whose general formula is represented by the formula (1), a polyether, and an organic solvent is applied to the surface of a substrate, and a part of the monoalkyltrialkoxysilane or A coating film is obtained by dehydrating and condensing the entire
Thereafter, the polyether is eluted from the coating film with an organic solvent to form a film having antireflection properties on the substrate R-Si-(OR')_3(1) ~4 alkyl group, R' is an alkyl group having 1 to 6 carbon atoms) 2) A solution containing a monoalkyltrialkoxysilane whose general formula is represented by formula (1), a polyether, and an organic solvent is applied to the surface of the substrate. a coating film in which a part or all of the monoalkyltrialkoxysilane is dehydrated and condensed;
A method of forming a film having antireflection properties on a substrate by heating the coating film R-Si-(OR')_3(1) (wherein R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 to 6 carbon atoms) 3) A porous membrane, the porosity of the membrane is expressed by the general formula (1)
) The polyether is eluted from a coating film containing a dehydrated condensate of part or all of the monoalkyltrialkoxysilane, which is coated on the surface of a substrate with a solution containing the monoalkyltrialkoxysilane represented by the formula, polyether, and an organic solvent. Porous antireflection film R-Si-(OR')_3(1) (R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 to 4 carbon atoms, and R' is an alkyl group having 1 to 4 carbon atoms.
-6 alkyl group) 4) A film made of porous silicon oxide, the porosity of the film being determined by a solution containing a monoalkyltrialkoxysilane represented by the general formula (1), a polyether, and an organic solvent. An antireflection film R- is formed by heating a coating film containing a dehydrated condensate of part or all of a monoalkyltrialkoxysilane coated on a substrate surface, and removing organic components in the coating film by thermal decomposition. Si-(OR')_3(1) (R is an alkyl group having 1 to 4 carbon atoms, R' is an alkyl group having 1 carbon number
~6 alkyl group)
JP1342368A 1989-12-28 1989-12-28 Antireflection film and method of forming the same Expired - Lifetime JP2913715B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1342368A JP2913715B2 (en) 1989-12-28 1989-12-28 Antireflection film and method of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1342368A JP2913715B2 (en) 1989-12-28 1989-12-28 Antireflection film and method of forming the same

Publications (2)

Publication Number Publication Date
JPH03199043A true JPH03199043A (en) 1991-08-30
JP2913715B2 JP2913715B2 (en) 1999-06-28

Family

ID=18353189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1342368A Expired - Lifetime JP2913715B2 (en) 1989-12-28 1989-12-28 Antireflection film and method of forming the same

Country Status (1)

Country Link
JP (1) JP2913715B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002039187A1 (en) * 2000-11-08 2002-05-16 Jsr Corporation Compositions for under-resist film and processes for producing the same, and under-resist films and processes for producing the same
US6413882B1 (en) * 1999-04-14 2002-07-02 Alliedsignal Inc. Low dielectric foam dielectric formed from polymer decomposition
WO2003052003A1 (en) * 2001-12-14 2003-06-26 Asahi Kasei Kabushiki Kaisha Coating composition for forming low-refractive index thin layers
JP2005099693A (en) * 2003-09-05 2005-04-14 Hitachi Chem Co Ltd Composition for forming antireflection film, method for manufacturing antireflection film using the same, optical components and solar battery unit
JPWO2004092840A1 (en) * 2003-04-17 2006-07-06 日産化学工業株式会社 Porous underlayer film and composition for forming underlayer film for forming porous underlayer film
WO2006132351A1 (en) 2005-06-09 2006-12-14 Hitachi Chemical Company, Ltd. Method for forming antireflection film
JP2007213079A (en) * 2006-02-08 2007-08-23 Dongwoo Fine-Chem Co Ltd Low reflection film and its manufacturing method
JP2007269912A (en) * 2006-03-30 2007-10-18 Nitto Denko Corp Method for producing porous material, porous material, reflection-preventing membrane, method for producing reflection-preventing sheet and reflection-preventing sheet
US20080241373A1 (en) * 2007-03-09 2008-10-02 Afg Industries, Inc. Anti-reflective coating for photovoltaic glass panel
JP2011529996A (en) * 2008-08-07 2011-12-15 ワッカー ケミー アクチエンゲゼルシャフト Method for producing silicone-based foam
WO2013111783A1 (en) 2012-01-23 2013-08-01 旭化成イーマテリアルズ株式会社 Coating composition and antireflection film
JP2020164665A (en) * 2019-03-29 2020-10-08 旭化成株式会社 Reflector

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413882B1 (en) * 1999-04-14 2002-07-02 Alliedsignal Inc. Low dielectric foam dielectric formed from polymer decomposition
WO2002039187A1 (en) * 2000-11-08 2002-05-16 Jsr Corporation Compositions for under-resist film and processes for producing the same, and under-resist films and processes for producing the same
WO2003052003A1 (en) * 2001-12-14 2003-06-26 Asahi Kasei Kabushiki Kaisha Coating composition for forming low-refractive index thin layers
US7081272B2 (en) 2001-12-14 2006-07-25 Asahi Kasei Kabushiki Kaisha Coating composition for forming low-refractive index thin layers
JPWO2004092840A1 (en) * 2003-04-17 2006-07-06 日産化学工業株式会社 Porous underlayer film and composition for forming underlayer film for forming porous underlayer film
JP2005099693A (en) * 2003-09-05 2005-04-14 Hitachi Chem Co Ltd Composition for forming antireflection film, method for manufacturing antireflection film using the same, optical components and solar battery unit
WO2006132351A1 (en) 2005-06-09 2006-12-14 Hitachi Chemical Company, Ltd. Method for forming antireflection film
JP2007213079A (en) * 2006-02-08 2007-08-23 Dongwoo Fine-Chem Co Ltd Low reflection film and its manufacturing method
JP2007269912A (en) * 2006-03-30 2007-10-18 Nitto Denko Corp Method for producing porous material, porous material, reflection-preventing membrane, method for producing reflection-preventing sheet and reflection-preventing sheet
US20080241373A1 (en) * 2007-03-09 2008-10-02 Afg Industries, Inc. Anti-reflective coating for photovoltaic glass panel
US9242893B2 (en) 2007-03-09 2016-01-26 Agc Flat Glass North America, Inc. Anti reflective coating for photovoltaic glass panel
JP2011529996A (en) * 2008-08-07 2011-12-15 ワッカー ケミー アクチエンゲゼルシャフト Method for producing silicone-based foam
WO2013111783A1 (en) 2012-01-23 2013-08-01 旭化成イーマテリアルズ株式会社 Coating composition and antireflection film
KR20140102283A (en) 2012-01-23 2014-08-21 아사히 가세이 이-매터리얼즈 가부시키가이샤 Coating composition and antireflection film
JP2020164665A (en) * 2019-03-29 2020-10-08 旭化成株式会社 Reflector

Also Published As

Publication number Publication date
JP2913715B2 (en) 1999-06-28

Similar Documents

Publication Publication Date Title
US6372354B1 (en) Composition and method for a coating providing anti-reflective and anti-static properties
JPH03199043A (en) Antireflection film and forming method thereof
KR20040070225A (en) Coating composition for forming low-refractive index thin layers
JPH0792695A (en) Forming method of thin film pattern
JPH021778A (en) Coating liquid for forming oxide coating film and production of oxide coating film
JP2999603B2 (en) Spin-on-glass composition, hard mask and method for manufacturing hard mask
JP2019527175A (en) Self-curing mixed metal oxide
JP5640310B2 (en) Composition, antireflection film substrate, and solar cell system
JP2010250069A (en) Antireflective film and optical element having the same
KR101981127B1 (en) Screen printable anti-reflective coating composition and manufacturing method of anti-reflective coating film using the coating composition
US4619704A (en) Composition for forming a transparent conductive film
JP2000160098A (en) Coating solution, optical functional film, and antireflfction film
JPH06136162A (en) Formation of thin metal oxide film
Tohge et al. Preparation of B2O3–SiO2 Coating Films by the Sol-Gel Method
Tsukuma et al. Liquid phase deposition of a film of silica with an organic functional group
JP2005225689A (en) Coating liquid for forming porous silica film, porous silica film, method of manufacturing them, semiconductor material and semiconductor device
JPH08319109A (en) Inorganic composition and production of laminate
JP4868432B2 (en) Method for producing mesoporous silica structure, mesoporous silica structure, and liquid crystal element having the same
KR20190031924A (en) Manufacturing method of anti-reflective glass using screen printable anti-reflective coating composition
Logan et al. Sol-gel-derived silica films with tailored microstructures for applications requiring organic dyes
JP3135679B2 (en) Ultraviolet shielding film forming solution and method for producing ultraviolet shielding film using the same
JPS60235711A (en) Formation of sio2 film
JP3650164B2 (en) Method for producing optical functional film
US20090246512A1 (en) Article With Organic-Inorganic Composite Film
Marinace et al. Titanium Dioxide Films to Improve Photoresist Adhesion