JPH03198363A - Dicing method of semiconductor unit - Google Patents
Dicing method of semiconductor unitInfo
- Publication number
- JPH03198363A JPH03198363A JP1339483A JP33948389A JPH03198363A JP H03198363 A JPH03198363 A JP H03198363A JP 1339483 A JP1339483 A JP 1339483A JP 33948389 A JP33948389 A JP 33948389A JP H03198363 A JPH03198363 A JP H03198363A
- Authority
- JP
- Japan
- Prior art keywords
- whose
- dicing
- semiconductor
- semiconductor unit
- specific heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009835 boiling Methods 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 4
- 239000002173 cutting fluid Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 4
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000005357 flat glass Substances 0.000 abstract description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZMXIYERNXPIYFR-UHFFFAOYSA-N 1-ethylnaphthalene Chemical compound C1=CC=C2C(CC)=CC=CC2=C1 ZMXIYERNXPIYFR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- RJTJVVYSTUQWNI-UHFFFAOYSA-N beta-ethyl naphthalene Natural products C1=CC=CC2=CC(CC)=CC=C21 RJTJVVYSTUQWNI-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、薄膜半導体を含む絶縁基板等をダイシングす
る方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for dicing an insulating substrate or the like containing a thin film semiconductor.
石英−薄膜半導体一接着剤一薄板ガラスといったような
層構成をもつ半導体やイメージセンサは１通常、大型基
板上に多数個のユニットを一度に形成しておき、これを
ダイヤモンドブレード等を用いて切削し、個々のユニッ
トを得ている。Semiconductors and image sensors that have a layered structure such as quartz - thin film semiconductor - adhesive - thin glass 1. Normally, many units are formed on a large substrate at once and then cut using a diamond blade or the like. And we are getting individual units.
ダイシングのさいには、ブレードと切削面は摩擦により
高温（例えば８００℃）となるので、従来、この個所に
純水を流して冷却していた。During dicing, the blade and the cutting surface reach high temperatures (for example, 800° C.) due to friction, so conventionally, pure water was poured into these areas to cool them down.
半導体装置においては、目にみえないヒビ割れから湿分
や水が侵入し、これが半導体の機能低下や不良をひきお
こすことは知られていたし、またチッピングを最小限に
抑えるという課題も存在していたが、これらの原因が純
水の冷却によるものであることは知られていなかった。It has been known that moisture and water can enter through invisible cracks in semiconductor devices, causing deterioration in semiconductor functionality and failure, and there is also the issue of minimizing chipping. However, it was not known that these causes were due to cooling of pure water.
ところが、本発明者の研究によれば、予想だにしないこ
とであるが従来、ブレードと切削面の高温を下げるため
に使用されていた水がヒビ割れ発生やチッピング等の原
因の１つになっていることが判明した。However, according to research conducted by the present inventor, unexpectedly, water, which was conventionally used to lower the high temperature of the blade and cutting surface, is one of the causes of cracking and chipping. It turned out that
そこで、その原因についてさらに研究を進めた結果、水
は沸点が１００℃であるため、切断面は１００℃以下ま
で急冷され、この急冷の結果、ヒビ割れやチッピングが
おこったり、接着剤やガラス等の破損がおこっているこ
とがわかった。As a result of further research into the cause, we found that since the boiling point of water is 100°C, the cut surface is rapidly cooled to below 100°C, and as a result of this rapid cooling, cracking and chipping occur, and adhesives, glass, etc. It was found that damage had occurred.
本発明の目的は、切削面の急冷をおこさないで、ダイシ
ングを行う方法を提供する点に−ある。An object of the present invention is to provide a method for performing dicing without rapidly cooling the cutting surface.
本発明は、絶縁基板上に形成された薄膜半導体よりなる
半導体ユニットをダイシングするにさいし、
ａ）沸点が少くとも１５０〜３００℃
ｂ）抵抗力Ｉ Ｘ １０−” Ｑ ａｍ−”以上Ｃ）比
熱が０．６ｃａｌ・ｇ−１４−１以下である有機化合物
系切削液を使用することを特徴とするダイシング方法に
関する。When dicing a semiconductor unit made of a thin film semiconductor formed on an insulating substrate, the present invention provides: a) a boiling point of at least 150 to 300°C, b) a resistive force of I x 10-"Q am-" or more, and c) a specific heat. The present invention relates to a dicing method characterized in that an organic compound-based cutting fluid having a particle diameter of 0.6 cal·g-14-1 or less is used.
本発明の切削液の例としては、
１．３−ピロパンジオール（Ｂ、Ｐ、２１４℃）、ジエ
チレングリコールモノブチルエーテル（Ｂ、Ｐ、２３０
℃）、
ジエチレングリコール（Ｂ 、 Ｐ 、２４５℃）、ト
リエチレングリコール（Ｂ、Ｐ、２７６℃）、グリセリ
ン（Ｂ 、 Ｐ 、２９０℃）、等の水と親和性が極め
て大きい化合物や。Examples of cutting fluids of the present invention include 1,3-pyropanediol (B, P, 214°C), diethylene glycol monobutyl ether (B, P, 230°C).
℃), diethylene glycol (B, P, 245℃), triethylene glycol (B, P, 276℃), glycerin (B, P, 290℃), and other compounds that have extremely high affinity for water.
プロピルベンゼン（Ｂ、Ｐ、１６０℃）ブチルベンゼン
（第１級ブチルＢ、Ｐ、１８３℃。Propylbenzene (B, P, 160°C) Butylbenzene (primary butyl B, P, 183°C.
第２級Ｂ、Ｐ、 １７３℃、第３級１６９℃）、メチル
ナフタレン（Ｂ、Ｐ、２４５℃）エチルナフタレン（Ｂ
、Ｐ、２５８℃）ビフェニル（Ｂ、Ｐ、２５６℃）
ジフェニルメタン（Ｂ、Ｐ、２６６℃）トリフェニルメ
タン（Ｂ、Ｐ、３５８℃）等を挙げることができる。Secondary B, P, 173℃, tertiary 169℃), Methylnaphthalene (B, P, 245℃) Ethylnaphthalene (B
, P, 258°C) biphenyl (B, P, 256°C), diphenylmethane (B, P, 266°C), triphenylmethane (B, P, 358°C), and the like.
なお、これら切削液のうち、水溶性のものは水洗による
後処理のみでよいが、非水溶性のものは、例えばトリク
レン→アセトン→アルコールという順次洗浄を行うこと
が好ましい。Note that among these cutting fluids, those that are water-soluble need only be post-treated by washing with water, but those that are not water-soluble are preferably washed in the order of trichlene, acetone, and alcohol, for example.
ダイシングに使用した装置の概略図を第１図に示す。 A schematic diagram of the apparatus used for dicing is shown in FIG.
３１はダイヤモンドブレード、２０は実施例のダイシン
グに使用した半導体ユニットで、その層構成は第３図に
示す、３２は半導体ユニットを保持するためのテープ、
３３は半導体ユニットを確保するための真空チャックテ
ーブルである。31 is a diamond blade; 20 is a semiconductor unit used for dicing in the example, the layer structure of which is shown in FIG. 3; 32 is a tape for holding the semiconductor unit;
33 is a vacuum chuck table for securing the semiconductor unit.
実施例における半導体ユニットの層構成は、１が石英基
板、２は多結晶シリコン膜、３はゲート絶縁膜、４は多
結晶シリコン膜よりなるゲート、５は５ｉｎｓよりなる
層間絶趣膜。The layer structure of the semiconductor unit in the example is as follows: 1 is a quartz substrate, 2 is a polycrystalline silicon film, 3 is a gate insulating film, 4 is a gate made of a polycrystalline silicon film, and 5 is an interlayer insulation film made of 5ins.
６はＡＱ電極、７はパッシベーション膜（Ｓｉ□Ｎ４）
、８はエポキシ系接着剤、９は薄板ガラスである。6 is an AQ electrode, 7 is a passivation film (Si□N4)
, 8 is an epoxy adhesive, and 9 is a thin plate glass.
実施例１
前記半導体ユニットを前記装置により切削液としてジエ
チレングリコール（Ｂ、Ｐ、２４５℃）を使用し、ダイ
ヤモンドブレードの回転数６００Ｏｒ、ｐ、ｍ、カッテ
ィングスピード６０！ＩＩｌ／ｌ１ｉｎでダイシングし
た。Example 1 The semiconductor unit was processed using the device using diethylene glycol (B, P, 245° C.) as the cutting fluid, the number of rotations of the diamond blade was 600 Or, p, m, and the cutting speed was 60! Dicing was carried out at IIl/l1in.
その結果を第１表に示す。The results are shown in Table 1.
実施例２
切削液として、アルキルベンゼン（Ｂ、Ｐ、１７６℃）
を使用する以外は実施例１と同様である。Example 2 Alkylbenzene (B, P, 176°C) as cutting fluid
This is the same as in Example 1 except that .
実施例３ 切削液として、アルキルナフタレン（Ｂ、Ｐ。Example 3 Alkylnaphthalenes (B, P) are used as cutting fluids.
３２６℃）を使用する以外は実施例１と同様である。The procedure was the same as in Example 1 except that a temperature of 326°C was used.
対 照
切削液として純水を使用する以外は実施例１と同様であ
る。It is the same as Example 1 except that pure water is used as the control cutting fluid.
第１表 ものである。Table 1 It is something.
本発明によりチッピングの幅を減少させることができ、
又、切断後のデバイスの耐水性テストでも良好な結果か
えられ、薄板ガラス等の割れもなく、信頼性のある半導
体装置、イメージセンサ等を提供できる。The present invention can reduce the width of chipping,
In addition, good results were obtained in the water resistance test of the device after cutting, and reliable semiconductor devices, image sensors, etc., could be provided without cracking of the thin glass or the like.
第１図は、本発明の方法を実施するときに使用するダイ
シング装置の１例を示す断面図である。
第２図は、最大チッピング幅の測定方法を説明するため
のものである。
第３図は、本発明の実施例で用いた半導体ユニットの層
構成を示す断面図である。
１・・・絶縁基板 ２・・・多結晶シリコン膜３
・・・ゲート絶縁膜 ４・・・ゲート５・・・層間絶
縁膜 ６・・・ＡＱ電極７・・・パッシベーション
膜
８・・・接着剤 ９・・・薄板ガラス２０・・
・半導体ユニット ３１・・・ブレード３２・・・テー
プ
３３・・・真空チャックテーブルFIG. 1 is a sectional view showing one example of a dicing apparatus used when carrying out the method of the present invention. FIG. 2 is for explaining the method of measuring the maximum chipping width. FIG. 3 is a cross-sectional view showing the layer structure of a semiconductor unit used in an example of the present invention. 1... Insulating substrate 2... Polycrystalline silicon film 3
...Gate insulating film 4...Gate 5...Interlayer insulating film 6...AQ electrode 7...Passivation film 8...Adhesive 9...Thin glass 20...
・Semiconductor unit 31...Blade 32...Tape 33...Vacuum chuck table
Claims (1)
ユニットをダイシングするにさいし、ａ）沸点が少くと
も１５０〜３００℃ ｂ）抵抗が１×１０＾−＾８Ωｃｍ＾−＾１以上ｃ）比
熱が０．６ｃａｌ・ｇ＾−＾１・Ｋ＾−＾１以下である
有機化合物系切削液を使用することを特徴とするダイシ
ング方法。[Claims] 1. When dicing a semiconductor unit made of a thin film semiconductor formed on an insulating substrate, a) a boiling point of at least 150 to 300°C b) a resistance of 1×10^-^8 Ωcm^- A dicing method characterized by using an organic compound cutting fluid having a specific heat of ^1 or more and c) a specific heat of 0.6 cal/g^-^1/K^-^1 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1339483A JPH03198363A (en) | 1989-12-27 | 1989-12-27 | Dicing method of semiconductor unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1339483A JPH03198363A (en) | 1989-12-27 | 1989-12-27 | Dicing method of semiconductor unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03198363A true JPH03198363A (en) | 1991-08-29 |
Family
ID=18327893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1339483A Pending JPH03198363A (en) | 1989-12-27 | 1989-12-27 | Dicing method of semiconductor unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03198363A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1011077C2 (en) * | 1999-01-19 | 2000-07-20 | Meco Equip Eng | Method and device for separating products formed with a common carrier along a cutting line (s). |
| KR20230034885A (en) | 2021-09-03 | 2023-03-10 | 가부시기가이샤 디스코 | Diamond wafer dividing method and chip manufacturing method |
| KR20230039546A (en) | 2021-09-13 | 2023-03-21 | 가부시기가이샤 디스코 | Protective film agent, and method for processing workpiece |
-
1989
- 1989-12-27 JP JP1339483A patent/JPH03198363A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1011077C2 (en) * | 1999-01-19 | 2000-07-20 | Meco Equip Eng | Method and device for separating products formed with a common carrier along a cutting line (s). |
| EP1022779A1 (en) * | 1999-01-19 | 2000-07-26 | Meco Equipment Engineers B.V. | Method and device for separating products, mounted on a common substrate, from each other, along (a) cutting line(s) |
| SG85684A1 (en) * | 1999-01-19 | 2002-01-15 | Meco Equip Eng | Method and device for separating products, mounted on a common substrate, from each other along (a) cutting line (s) |
| KR20230034885A (en) | 2021-09-03 | 2023-03-10 | 가부시기가이샤 디스코 | Diamond wafer dividing method and chip manufacturing method |
| KR20230039546A (en) | 2021-09-13 | 2023-03-21 | 가부시기가이샤 디스코 | Protective film agent, and method for processing workpiece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Morphology and bond strength of copper wafer bonding | |
| CN102167875B (en) | High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach | |
| Bravman et al. | The preparation of cross‐section specimens for transmission electron microscopy | |
| US3152939A (en) | Process for preparing semiconductor members | |
| JPS6051700A (en) | Bonding method of silicon crystalline body | |
| Esser et al. | Improved Low-Temperature Si Si Hydrophilic Wafer Bonding | |
| JPH03198363A (en) | Dicing method of semiconductor unit | |
| US4081819A (en) | Mercury cadmium telluride device | |
| JPS60121715A (en) | Bonding method for semiconductor wafer | |
| Anantha et al. | Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation | |
| CN106935480A (en) | A kind of cleaning method implemented after cmp copper metal interconnection layer | |
| CN201450007U (en) | Bidirectional trigger diode chip | |
| JP2008544945A (en) | Oxygen-sensitive silicon layer and method for obtaining the silicon layer | |
| JPH02170514A (en) | Method of mutually bonding silicon wafer for manufacturing semiconductor device | |
| Utsumi et al. | Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film | |
| Suu et al. | Formation of GdSi2 under UHV evaporation and in situ annealing | |
| LoVecchio et al. | PLANAR Pb0· 8Sn0· 2Te PHOTODIODE ARRAY DEVELOPMENT AT THE NIGHT VISION LABORATORY | |
| Tao et al. | Electromigration characteristics of TiN barrier layer material | |
| JPH0636407B2 (en) | Semiconductor wafer bonding method | |
| Zakzouk | Time dependent MOS gate oxide defects using liquid crystals | |
| JP4153814B2 (en) | Method for manufacturing photoelectric conversion device | |
| JP2566657B2 (en) | Method for manufacturing semiconductor device | |
| CN115901864B (en) | Array type multi-temperature-zone gas sensor and preparation method thereof | |
| JP6557325B2 (en) | Semiconductor structure, manufacturing method and use thereof | |
| Spry et al. | Processing Choices for Achieving Long Term IC Operation at 500 C |