JPH0319627B2 - - Google Patents
Info
- Publication number
- JPH0319627B2 JPH0319627B2 JP57039428A JP3942882A JPH0319627B2 JP H0319627 B2 JPH0319627 B2 JP H0319627B2 JP 57039428 A JP57039428 A JP 57039428A JP 3942882 A JP3942882 A JP 3942882A JP H0319627 B2 JPH0319627 B2 JP H0319627B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- film
- recording medium
- present
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- -1 N 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00451—Recording involving ablation of the recording layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は光学的に記録・再生が可能な情報記録
媒体に係り、特に低エネルギーのレーザビームに
ても記録が出来る光学的情報記録媒体に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to an information recording medium that can be optically recorded and reproduced, and particularly relates to an optical information recording medium that can record even with a low-energy laser beam. .
光学的に情報を記録・再生する記録媒体とし
て、従来Te膜を用いるものが試みられている。
一方かかる記録媒体を用いる情報記録・再生シス
テムにおいては、装置の小形化、軽量化を計るた
め、ガスレーザの如く大形の変調器を外部に必要
とせず、小形軽量で直接変調可能な半導体レーザ
の採用が不可欠となつている。しかしながら半導
体レーザは発生し得るパワーが現状では充分でな
く、Te膜に充分な再生信号が得られるようなパ
ワーを発生させた場合、著しく寿命が低下すると
いう問題がある。また、Te膜は、大気中に放置
された場合、比較的容易に空気中の水分、酸素と
反応して酸化物を形成するため記録媒体の寿命が
短いという問題がある。またこのような問題点は
Te以外の金属、例えばCd，In，Sn，Zn，Pb，
Bi等についても言え、その対策が望まれていた。
Conventionally, attempts have been made to use Te films as recording media for optically recording and reproducing information.
On the other hand, in an information recording/reproducing system using such a recording medium, in order to make the device smaller and lighter, a semiconductor laser that is small, lightweight, and can be directly modulated is used instead of requiring a large external modulator like a gas laser. Recruitment has become essential. However, the power that can be generated by semiconductor lasers is not currently sufficient, and when such power is generated that a sufficient reproduction signal can be obtained from the Te film, there is a problem in that the life span is significantly reduced. Furthermore, when a Te film is left in the atmosphere, it relatively easily reacts with moisture and oxygen in the air to form oxides, resulting in a problem that the life of the recording medium is short. Also, such problems
Metals other than Te, such as Cd, In, Sn, Zn, Pb,
The same can be said for Bi, etc., and countermeasures have been desired.
本発明はかかる従来のTe等の単独膜を用いる
記録媒体の欠点を除去し、半導体レーザの寿命を
減少させないような低パワーの照射によつても充
分な情報再生信号の得られる高感度でありなが
ら、Te等の単独膜よりも寿命の長い記録媒体を
提供することを目的としてなされたものである。
The present invention eliminates the drawbacks of the conventional recording medium using a single film of Te, etc., and provides high sensitivity that allows a sufficient information reproduction signal to be obtained even with low power irradiation that does not reduce the life of the semiconductor laser. However, this was done with the aim of providing a recording medium with a longer lifespan than a single film made of Te or the like.
本発明の光学的情報記録媒体は窒素、水素を含
有するTe等の膜を記録膜に用いることを特徴と
している。
The optical information recording medium of the present invention is characterized in that a film of Te or the like containing nitrogen and hydrogen is used as the recording film.
第１図は本発明の一実施例を示す断面図であ
る。第１図中１はTe，Ｎ，Ｈから構成される記
録膜、２はアクリル基板である。基板はアクリル
の他ポリヤーボネイトなどの有機樹脂を用いるこ
とも出来るし、ガラス板を用いることも出来る。
情報の記録再生は記録膜側ないし基板側から必要
に応じて行なうことが出来る。
FIG. 1 is a sectional view showing one embodiment of the present invention. In FIG. 1, 1 is a recording film composed of Te, N, and H, and 2 is an acrylic substrate. In addition to acrylic, organic resin such as polycarbonate can be used for the substrate, and a glass plate can also be used.
Information can be recorded and reproduced from the recording film side or the substrate side as necessary.
Te，Ｎ，Ｈからなる記録膜はTeをターゲツト
とし、Ｎ，Ｈを含むガス例えばN2，NH3，H2な
どの混合ガスのプラズマでスパツタリングするこ
とにより製作出来る。 A recording film made of Te, N, and H can be produced by sputtering with Te as a target and a plasma of a mixed gas containing N and H, such as N 2 , NH 3 , and H 2 .
例えば、TeをターゲツトとしH2／NH3＝0.1の
混合ガスをスパツタリング装置に導入し、アクリ
ル基板とターゲツト間に3mW／cm2のRF
（13.56MHZ）電力を印加するとTe85N10H5なる成
分比の記録膜が形成出来る。 For example, a mixed gas of H 2 /NH 3 = 0.1 is introduced into a sputtering device using Te as a target, and an RF of 3 mW/cm 2 is applied between the acrylic substrate and the target.
( 13.56MHZ ) When electric power is applied, a recording film with a component ratio of Te 85 N 10 H 5 can be formed.
上記の条件で製作した膜厚500ÅのTe85N10H5
を記録膜とする記録媒体に半導体レーザで記録・
再生を行ない、また比較のために厚さ500ÅのTe
単独膜をArガスのスパツタリングでアクリル基
板上に形成した記録媒体についても同一の条件で
記録・再生を行なつた。そして情報再生信号の変
調度が50％得られるる記録用エネルギーを比較し
た結果、Te単体の記録膜の場合を１とすると本
発明の記録媒体の場合0.7であつた。 Te 85 N 10 H 5 with a film thickness of 500 Å manufactured under the above conditions
Recording with a semiconductor laser on a recording medium with a recording film of
A 500 Å thick Te
Recording and reproduction were performed under the same conditions on a recording medium in which a single film was formed on an acrylic substrate by sputtering with Ar gas. Then, as a result of comparing the recording energy required to obtain a modulation degree of 50% of the information reproduction signal, it was found to be 0.7 in the case of the recording medium of the present invention, when it is 1 in the case of the recording film made of only Te.
次にTeをターゲツトとしH2／N2／NH3＝
0.2／0.5／１の混合ガスをスパツタリング装置に
導入し、アクリル基板とターゲツト間に4mW／
cm2のRF電力を印加し、膜厚600ÅのTe70N20H5な
る成分比の記録膜を形成した。かかる記録媒体に
半導体レーザで記録・再生を行なつた。また厚さ
600ÅのTe単独膜をアクリル基板上に形成した記
録媒体についても同一の条件で記録・再生を行な
つた。そして情報再生信号の変調度が60％得られ
る記録エネルギーを比較すると、Te単体の記録
膜の場合を１とした場合、本実施例の記録媒体は
0.5であつた。 Next, target Te and H 2 /N 2 /NH 3 =
A mixed gas of 0.2/0.5/1 was introduced into the sputtering equipment, and 4 mW/W was applied between the acrylic substrate and the target.
An RF power of cm 2 was applied to form a recording film having a thickness of 600 Å and a composition ratio of Te 70 N 20 H 5 . Recording and reproduction were performed on such a recording medium using a semiconductor laser. Also the thickness
Recording and reproduction were performed under the same conditions on a recording medium in which a 600 Å Te film alone was formed on an acrylic substrate. Comparing the recording energy required to obtain a modulation degree of 60% for the information reproduction signal, if the recording film of only Te is set to 1, the recording medium of this example is
It was 0.5.
上述の如く本発明の記録媒体は優れた記録感度
を保有している。これは記録膜中のTeとＮ，Ｈ
との結合が弱く、低エネルギーのレーザビームの
照射によつてもＮ，Ｈをガスとして記録膜中から
放出することによるものである。ただ、Ｎを20％
以上ないし、Ｈを10％以上含む膜については膜形
成後に強い機械的シヨツクを与えた場合加熱する
ことなくＮ，Ｈをガスとして放出し膜が破壊され
る虞れがあるため、Ｎは２〜20原子％、Ｈは２〜
10％が望ましい。 As described above, the recording medium of the present invention has excellent recording sensitivity. This is due to Te, N, and H in the recording film.
This is because N and H are weakly bonded to each other, and even when irradiated with a low-energy laser beam, N and H are released from the recording film as gas. However, N is 20%
In addition, for films containing 10% or more of H, if a strong mechanical shock is applied after the film is formed, N and H may be released as gas without heating and the film may be destroyed. 20 atomic%, H is 2~
10% is desirable.
第２図は温度70℃、相対湿度85％の雰囲気中に
おける記録感度と経過時間との関係を示したもの
である。第２図中Ａは本発明実施例のTe80N10H5
なる成分比の記録膜とした記録媒体、ＢはTe単
独膜である。膜厚はいずれも600Å、基板はガラ
スである。感度の劣化は記録に必要なエネルギー
の逆数の初期値に対する変化として表わしてあ
る。図からうかがえるように本発明の記録媒体は
Te単独膜に比べ優れた寿命を有している。また
目視観察によつてもTe単独膜を記録膜とした記
録媒体は時間経過とともにシミ状に透明部が広が
つていくのに対し、本発明の記録媒体には何ら変
化が認められなかつた。 Figure 2 shows the relationship between recording sensitivity and elapsed time in an atmosphere with a temperature of 70°C and a relative humidity of 85%. A in FIG. 2 is Te 80 N 10 H 5 of the embodiment of the present invention.
A recording medium having a recording film having the following composition ratio, B is a Te single film. The film thickness is 600 Å in both cases, and the substrate is glass. The deterioration in sensitivity is expressed as a change in the reciprocal of the energy required for recording relative to its initial value. As can be seen from the figure, the recording medium of the present invention
It has a superior lifetime compared to a Te film alone. Furthermore, visual observation revealed that in contrast to the recording medium in which the recording film was made of a single Te film, the transparent area spread out in a stain-like manner over time, no change was observed in the recording medium of the present invention.
本実施例ではスパツタリングで膜形成を行なつ
た例を示したがTeの膜形成はイオンプレーテイ
ング、イオンクラスタービーム蒸着などの方法で
行なうことも出来る。また、使用されるガスは実
施例に示したH2，NH3，H2の他にN2H2，N2H2
＋N2，N2H2＋N2＋H2などの混合ガスであつて
もよい。 Although this embodiment shows an example in which the film was formed by sputtering, the Te film can also be formed by ion plating, ion cluster beam evaporation, or other methods. In addition, the gases used are N 2 H 2 , N 2 H 2 in addition to H 2 , NH 3 , and H 2 shown in the examples .
It may be a mixed gas such as +N 2 , N 2 H 2 +N 2 +H 2 .
また実施例ではTeについて説明したが、融点
が25〜600℃の金属、たとえばCd，In，Sn，Zn，
Pb，Bi等にあつても本発明と同様の効果が得ら
れる。 In addition, although Te was explained in the examples, metals with a melting point of 25 to 600℃, such as Cd, In, Sn, Zn,
Even with Pb, Bi, etc., the same effects as the present invention can be obtained.
以上述べたように本発明によればTe等の単独
膜よりも高感度が得られる為低パワーの照射によ
つても充分な情報再生が可能となり、かつTe等
の単独膜よりも長寿命の記録媒体とすることがで
きる。
As described above, according to the present invention, higher sensitivity than a single film such as Te can be obtained, so sufficient information can be reproduced even with low power irradiation, and it has a longer lifespan than a single film such as Te. It can be used as a recording medium.
第１図は本発明の記録媒体の一実施例を示す構
成図、第２図は本発明の記録媒体と従来の記録媒
体の特性比較図である。
１……Te，Ｎ，Ｈよりなる記録膜、２……ア
クリル基板。
FIG. 1 is a block diagram showing an embodiment of the recording medium of the present invention, and FIG. 2 is a characteristic comparison diagram of the recording medium of the present invention and a conventional recording medium. 1... Recording film made of Te, N, H, 2... Acrylic substrate.
Claims (1)
において、基板上に形成される記録膜が25〜600
℃の融点をもつ金属と窒素と水素とからなること
を特徴とする光学的情報記録媒体。 ２ 記録膜中の窒素は２乃至20原子％、水素は２
乃至10原子％含まれていることを特徴とする特許
請求の範囲第１項記載の光学的情報記録媒体。[Claims] 1. In a recording medium for optically recording and reproducing information, the recording film formed on the substrate has a thickness of 25 to 600.
An optical information recording medium characterized by being made of a metal with a melting point of °C, nitrogen, and hydrogen. 2 Nitrogen in the recording film is 2 to 20 atomic percent, hydrogen is 2
The optical information recording medium according to claim 1, wherein the optical information recording medium contains from 10 atomic % to 10 atomic %.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039428A JPS58158053A (en) | 1982-03-15 | 1982-03-15 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039428A JPS58158053A (en) | 1982-03-15 | 1982-03-15 | Optical information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158053A JPS58158053A (en) | 1983-09-20 |
| JPH0319627B2 true JPH0319627B2 (en) | 1991-03-15 |
Family
ID=12552722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57039428A Granted JPS58158053A (en) | 1982-03-15 | 1982-03-15 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158053A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134741A (en) * | 1984-07-09 | 1986-02-19 | アメリカン テレフォン アンド テレグラフ カムパニー | Medium for storage of information |
| JPS6144694A (en) * | 1984-08-09 | 1986-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Lamination type laser recording medium |
-
1982
- 1982-03-15 JP JP57039428A patent/JPS58158053A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58158053A (en) | 1983-09-20 |
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