JPH03193873A - Continuous formation of thin film in vacuum and device - Google Patents

Continuous formation of thin film in vacuum and device

Info

Publication number
JPH03193873A
JPH03193873A JP33410989A JP33410989A JPH03193873A JP H03193873 A JPH03193873 A JP H03193873A JP 33410989 A JP33410989 A JP 33410989A JP 33410989 A JP33410989 A JP 33410989A JP H03193873 A JPH03193873 A JP H03193873A
Authority
JP
Japan
Prior art keywords
substrate holder
zone
vacuum
vacuum chamber
shunting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33410989A
Other languages
Japanese (ja)
Inventor
Hideo Miyashita
宮下 秀夫
Yasuhiro Enami
泰宏 枝並
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINKU KIKAI KOGYO KK
Original Assignee
SHINKU KIKAI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINKU KIKAI KOGYO KK filed Critical SHINKU KIKAI KOGYO KK
Priority to JP33410989A priority Critical patent/JPH03193873A/en
Publication of JPH03193873A publication Critical patent/JPH03193873A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To carry in and take out a base plate through the same inlet of a vacuum treatment chamber by hanging up a base plate holder with the hanging members of the front and rear steps which are successively provided to the moving direction of the base plate holder and passing the other base plate holder through the lower part thereof to replace the front and rear positions. CONSTITUTION:A base plate holder 51 is positioned in a film formation zone 13 to form a film in a state wherein a holder 53 having a base plate is positioned in a replacement zone 17. After film formation is completed, the holder 51 is passed through the lower part 17a and sent to the position 17b of the zone 17 from the zone 11 in a state wherein the zone 17 is shut for the atmosphere and the holder 53 is hung by a hanging member 19 of a rear step in the zone 17. Then the holder 51 is hung by a hanging member 21 of a front step in the zone 17 and also the holder 55 is lowered and sept to the zone 13. The interval between the zones 13, 17 is vacuously shut. Thereafter the zone 17 is released to the atmosphere or the other vacuum chamber. A holder 55 having a fresh base plate is passed through the lower part of the holder 51 and introduced into the zone 17 from the inlet side of the vacuum treatment chamber and sent to the position 17a. The holder 51 is lowered and the fresh base plate is sent toward the inlet side of the vacuum treatment chamber and taken out to the outside of the chamber.

Description

【発明の詳細な説明】 倉皇上立■尻分災 本発明は、真空雰囲気下で基板上に薄膜を連続的に形成
する方法および装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for continuously forming a thin film on a substrate in a vacuum atmosphere.

災來立技嵐 真空蒸着法などによる薄膜の形成においては、バッチ式
と連続式とがある。バッチ式では、基板をセットした基
板ホルダを真空処理室内に収納した後、排気→加熱→蒸
着→徐冷→リークの各工程を施して、基板上に薄膜が形
成される。
There are two methods for forming thin films, such as a vacuum deposition method: a batch method and a continuous method. In the batch method, after a substrate holder with a substrate set thereon is housed in a vacuum processing chamber, a thin film is formed on the substrate by performing the steps of evacuation, heating, vapor deposition, slow cooling, and leakage.

しかしバッチ式では、真空処理室内では1つの基板ホル
ダしか取り扱うことができず、排気、加熱、徐冷等の蒸
着の前後の工程に多くの時間を要し、装置−台当たりの
生産能力が低いという問題があった。
However, in the batch method, only one substrate holder can be handled in the vacuum processing chamber, and processes before and after vapor deposition such as evacuation, heating, and slow cooling take a lot of time, and the production capacity per device is low. There was a problem.

そこで、生産能力を高めるべく、連続式の蒸着装置が数
多く開発されている。連続型の蒸着装置では、予備排気
室−蒸着室−取出室(リーク室)、あるいは更に必要に
応じて予備加熱室等を連設し、各真空室間をゲートバル
ブを介して結び、基板ホルダを各真空室間に順次搬送し
、−の基板ホルダの蒸着時に他の基板ホルダの前処理あ
るいは後処理をする。
Therefore, many continuous vapor deposition apparatuses have been developed in order to increase production capacity. In a continuous type vapor deposition apparatus, a pre-evacuation chamber, a vapor deposition chamber, an extraction chamber (leak chamber), or a pre-heating chamber, etc. are installed in series as necessary, and each vacuum chamber is connected via a gate valve, and the substrate holder is are sequentially transported between the vacuum chambers, and pre-processing or post-processing of other substrate holders is performed during vapor deposition of the - substrate holder.

しかしながら従来の連続式の蒸着装置では、いずれもラ
イン状に各室を配置していたため。
However, in conventional continuous vapor deposition equipment, each chamber was arranged in a line.

新たな基板ホルダの投入側と、蒸着後の基板ホルダの取
出口とがラインの両端に離れて位置することになる。そ
のため、工場のレイアウトに制約を受けたり、自動化へ
の対応が困難な場合もあった。また、ゴミやホコリによ
り薄膜にピンホールが発生することを防止するため、ク
リーンルーム化が行なわれているが、この場合にもライ
ンの両端に位置する投入口と取出口との周方にクリーン
ルームを設置する必要が生じ、設備コストの上昇を招い
ていた。
The input side of the new substrate holder and the outlet of the substrate holder after vapor deposition are located apart from each other at both ends of the line. As a result, they were sometimes constrained by the layout of the factory and found it difficult to adapt to automation. Additionally, in order to prevent pinholes from forming in the thin film due to dirt and dust, a clean room is installed, and in this case, a clean room is also installed around the input and output ports located at both ends of the line. This resulted in an increase in equipment costs.

明が解 しようとする 本発明は、真空処理室の同一の入口から、基板の搬入、
取出しが可能な連続真空薄膜形成方法および装置を提供
するものである。
The present invention, which is intended to be clearly understood, involves the loading and unloading of substrates from the same entrance of the vacuum processing chamber.
The present invention provides a method and apparatus for forming a continuous vacuum thin film that can be taken out.

見肌立皇處 本発明の連続真空薄膜形成方法は、真空処理室入口側か
ら、基板ホルダを上方に吊持し得る前段および後段の吊
持部材が連設された入換帯域と、基板への薄膜の形成手
段を具えた成膜帯域とを順次連設して真空処理室を構成
し、以下の各工程を施すことを加熱処理する連続真空薄
膜形成方法。
The continuous vacuum thin film forming method of the present invention includes an exchange zone in which a front-stage and a rear-stage suspension member capable of suspending a substrate holder upward is connected from the entrance side of a vacuum processing chamber; A continuous vacuum thin film forming method in which a vacuum processing chamber is constructed by sequentially connecting a film forming zone equipped with a thin film forming means, and heat treatment is performed to perform each of the following steps.

A工程:薄膜を形成すべき新たな基板を有する第2の基
板ホルダを入換帯域に位 置せしめた状態で、第1の基板ホル ダを成膜帯域に位置させてこの基板 に成膜する工程。
Step A: A step in which a second substrate holder with a new substrate on which a thin film is to be formed is positioned in the exchange zone, and a first substrate holder is positioned in the deposition zone to form a film on this substrate.

B工程:成膜終了後に、入換帯域を大気に対して遮蔽し
た状態で、がっ、第2の 基板ホルダを入換帯域後段の吊持部 材で吊持した状態で、第2の基板ホ ルダの下方を通過させて、第1の基 板ホルダを成膜帯域から入換帯域前 段の吊持部材の下方位置に移送する 工程。
Step B: After the film formation is completed, with the exchange zone shielded from the atmosphere, and with the second substrate holder suspended by the suspension member at the rear stage of the exchange zone, move the second substrate holder to the second substrate holder. A step of transferring the first substrate holder from the film forming zone to a position below the suspension member at the front stage of the exchange zone.

C工程:第1の基板ホルダを入換帯域前段の吊持部材で
吊持するとともに、第2 の基板ホルダを降下させて成膜帯域 へ移送し、成膜帯域と入換帯域との 間を真空的に遮蔽する工程。
Step C: The first substrate holder is suspended by a suspension member in front of the exchange zone, and the second substrate holder is lowered and transferred to the deposition zone, and the gap between the deposition zone and the exchange zone is Vacuum shielding process.

D工程:第1の基板ホルダを入換帯域で吊持した状態で
入換帯域を大気または他 の真空室に開放し、第1の基板ホル ダの下方を通過させて、成膜すべき 新たな基板を有する第3の基板ホル ダを真空処理室入口側から入換帯域 に搬入し、後段の吊持部材の下方位 置に移送する工程。
Step D: With the first substrate holder suspended in the exchange zone, the exchange zone is opened to the atmosphere or another vacuum chamber, and the new substrate to be deposited is passed under the first substrate holder. A step of carrying the third substrate holder having the substrate into the exchange zone from the vacuum processing chamber entrance side and transferring it to a position below the suspension member in the latter stage.

E工程:第1の基板ホルダを下降させ真空処理室入口側
に向かって移送し、真空 処理室外に搬出する工程。
Step E: Step of lowering the first substrate holder, moving it toward the entrance of the vacuum processing chamber, and transporting it out of the vacuum processing chamber.

F工程:成膜帯域に位置する基板ホルダを第1の基板ホ
ルダ、入換帯域に位置す る基板ホルダを第2の基板ホルダと 読み替え、上記A〜Eの各工程を繰 り返す工程。
Step F: A step in which the substrate holder located in the film formation zone is read as the first substrate holder, and the substrate holder located in the exchange zone is read as the second substrate holder, and the steps A to E are repeated.

また、本発明の連続真空薄膜形成装置は、基板ホルダを
上昇・下降自在に吊持しうる前段および後段の吊持部材
が、基板ホルダの移送方向に連設された入換真空室と、 成膜手段を具えた成膜真空室と、 入換真空室と成膜真空室とを真空的に遮蔽−開放自在な
第1の開閉部材と、 入換真空室を大気または他の真空室に対して遮蔽−開放
自在な第2の開閉部材と、 入換真空室外部−入換真空室の前段吊持部材下方位置−
入換真空室の後段吊持部材下方位置間を往復移動して、
基板ホルダを搭載搬送する入口側移送部材と、 成膜真空室−入換真空室の後段吊持部材下方位置−入換
真空室の前段吊持部材下方位置間を往復移動して、基板
ホルダを搭載搬送する奥側移送部材 とを有することを加熱処理する。
Further, the continuous vacuum thin film forming apparatus of the present invention includes a shunting vacuum chamber in which front-stage and rear-stage suspension members capable of suspending the substrate holder so as to be able to ascend and descend freely are arranged in series in the transfer direction of the substrate holder; a film-forming vacuum chamber equipped with a film means; a first opening/closing member capable of vacuum-shielding and opening the shunting vacuum chamber and the film-forming vacuum chamber; shielding - a second opening/closing member that can be opened; and the outside of the shunting vacuum chamber - the lower position of the front suspension member of the shunting vacuum chamber;
By reciprocating between the lower positions of the rear suspension member of the shunting vacuum chamber,
The substrate holder is moved back and forth between the entrance-side transfer member that carries and transports the substrate holder, and the lower position of the rear-stage suspension member in the film-forming vacuum chamber, the shunting vacuum chamber, and the lower position of the front-stage suspension member in the shunting vacuum chamber. It is heat-treated to have a rear side transfer member for loading and conveying.

大−凰一孤 第1A〜IK図は、本発明の実施例を示す説明図(斜視
図)であり、第2図は第1A図に対応する断面図である
1A to IK are explanatory views (perspective views) showing an embodiment of the present invention, and FIG. 2 is a sectional view corresponding to FIG. 1A.

連続真空薄膜形成装置は、直線状に配置された予備排気
室23、入換真空室15および成膜真空室11から構成
されている。予備排気室23と入換真空室15との間、
および入換真空室15と成膜真空室11との間は、それ
ぞれゲートバルブ33.31により真空的に遮蔽自在に
結合されている。予備排気室23は、ゲートバルブ35
により装置外部27と遮断されており、このゲートバル
ブ35が真空処理室への基板ホルダの搬出入口となる。
The continuous vacuum thin film forming apparatus includes a preliminary evacuation chamber 23, a shunting vacuum chamber 15, and a film forming vacuum chamber 11 arranged in a linear manner. Between the preliminary exhaust chamber 23 and the shunting vacuum chamber 15,
The shunting vacuum chamber 15 and the film-forming vacuum chamber 11 are connected to each other by gate valves 33 and 31 so as to be able to be vacuum-shielded. The preliminary exhaust chamber 23 has a gate valve 35
This gate valve 35 serves as an entrance for carrying the substrate holder into and out of the vacuum processing chamber.

第2図に示すように、成膜真空室11の内部は成膜帯域
13を形成しており、下方に基板を加熱するためのハロ
ゲンランプ等のヒータ63および蒸発源65が設けられ
ている。キャリア43は、搬送部材41によって駆動・
移送されるキャリア本体43aと、キャリア本体43a
上にベアリング等を介して回転自在に載置された回転架
台43bとによって構成されている。基板ホルダ51は
、キャリア43の回転架台43b上に搭載されており、
ホルダ回転部材61とのギアの噛合により回転駆動され
る。
As shown in FIG. 2, the interior of the film-forming vacuum chamber 11 forms a film-forming zone 13, and a heater 63 such as a halogen lamp and an evaporation source 65 for heating the substrate are provided below. The carrier 43 is driven and driven by the conveying member 41.
The carrier body 43a to be transferred and the carrier body 43a
A rotary pedestal 43b is rotatably mounted on the top via a bearing or the like. The substrate holder 51 is mounted on the rotating pedestal 43b of the carrier 43,
It is rotationally driven by gear engagement with the holder rotating member 61.

入換真空室15の内部は入換帯域17を形成し、入換帯
域17は、2つの部分、即ち、前段吊持部材下方位置1
7bと後段吊持部材下方位置17aとに分けられる。
The interior of the shunting vacuum chamber 15 forms a shunting zone 17, and the shunting zone 17 is divided into two parts: the lower position 1 of the front suspension member;
7b and a rear suspension member lower position 17a.

前段吊持部材下方位置17bには、前段吊持部材21が
設けられている。前段吊持部材21は、駆動シリンダ7
3によって上下動し、基板ホルダを係合して吊り上げ、
あるいは下降して係合を解除することができる。
A front suspension member 21 is provided at the lower position 17b of the front suspension member. The front suspension member 21 is connected to the drive cylinder 7
3 to move up and down, engage and lift the board holder,
Alternatively, it can be lowered to release the engagement.

一方、後段吊持部材下方位置17aには、後段吊持部材
19が設けられている。後段吊持部材19は、駆動シリ
ンダ71によって上下動し、基板ホルダを係合して吊り
上げ、あるいは下降して係合を解除することができ、さ
らに係合状態で、モータ75により基板ホルダを回転さ
せることができる。また、ハロゲンランプなどのヒータ
77が設けられ、基板ホルダにセットされた基板を加熱
することができる。
On the other hand, a rear suspension member 19 is provided at a lower position 17a of the rear suspension member. The rear suspension member 19 can be moved up and down by a drive cylinder 71 to engage and lift the substrate holder, or can be lowered to release the engagement, and furthermore, in the engaged state, the substrate holder is rotated by a motor 75. can be done. Further, a heater 77 such as a halogen lamp is provided to heat the substrate set in the substrate holder.

予備真空室23の内部は、予備排気帯域25を形成する
The interior of the pre-vacuum chamber 23 forms a pre-evacuation zone 25 .

装置外部27、予備排気室23、入換真空室15、成膜
真空室11には、それぞれ搬送部材41が設けられ、こ
の上に入口側キャリア(移送部材)45および奥側キャ
リア43が載置されている。キャリア43および45は
、搬送部材の駆動ローラ41aにより、レール41bに
沿って移動する。
A transport member 41 is provided in each of the apparatus exterior 27, preliminary exhaust chamber 23, shunting vacuum chamber 15, and film forming vacuum chamber 11, and an inlet side carrier (transfer member) 45 and a back side carrier 43 are placed thereon. has been done. The carriers 43 and 45 are moved along the rails 41b by the drive rollers 41a of the conveying member.

キャリア43.45は中央に開口部を有しく第1G図の
開口部45a参照)、薄膜を形成すべき基板がこの開口
部に位置するように基板ホルダ51,53゜55を搭載
する。両キャリア43.45は移動位置が異なるのみで
、形状は全く同じである。なお、キャリアにおける開口
部および前述の回転架台は、主として薄膜形成時に必要
であるので、入口側キャリア45についてはこれらを省
略することもできる。
The carrier 43.45 has an opening in the center (see opening 45a in FIG. 1G), and the substrate holders 51, 53.55 are mounted so that the substrate on which a thin film is to be formed is positioned in this opening. Both carriers 43 and 45 have exactly the same shape, except for their moving positions. Incidentally, since the opening in the carrier and the above-mentioned rotating frame are mainly necessary when forming a thin film, they can be omitted from the inlet side carrier 45.

第1A図では、ゲートバルブ31,33.35がいずれ
も閉となっている。高真空に排気された成膜真空室11
内の成膜帯域13では、第1の基板ホルダ5Iが奥側キ
ャリア43に搭載されて位置しており、予め定められた
真空雰囲気およびヒータ63による加熱条件で、第1の
基板ホルダ51をホルダ回転部材61で回転させながら
蒸着源65により蒸着が為される。
In FIG. 1A, gate valves 31, 33.35 are both closed. Film forming vacuum chamber 11 evacuated to high vacuum
In the inner film forming zone 13, the first substrate holder 5I is mounted on the rear carrier 43, and the first substrate holder 51 is placed in the holder under predetermined vacuum atmosphere and heating conditions by the heater 63. Vapor deposition is performed by the vapor deposition source 65 while being rotated by the rotating member 61 .

また、このとき入換帯域17の後段吊持部材下方位置1
7aでは、新たな基板がセットされた第2の基板ホルダ
53が後段吊持部材19により吊持、回転されて、ヒー
タ77により予備加熱が為されている。
In addition, at this time, the lower position 1 of the rear suspension member of the shunting zone 17 is
7a, the second substrate holder 53 on which a new substrate is set is suspended and rotated by the rear suspension member 19, and preheated by the heater 77.

さらに、このとき予備排気室23には、新たな基板がセ
ットされた第3の基板ホルダ55が納められており、成
膜帯域13での蒸着操作中に、予備排気室23の排気あ
るいは基板の予備加熱が行なわれている。
Furthermore, at this time, the pre-evacuation chamber 23 houses a third substrate holder 55 in which a new substrate is set, and during the vapor deposition operation in the film-forming zone 13, the pre-evacuation chamber 23 is evacuated or the substrate is removed. Preheating is being performed.

第1の基板ホルダ51にセットされた基板の薄膜の形成
が終了すると、第1B図に示すように、ゲートバルブ3
1を開き、第1の基板ホルダ51を搭載している奥側キ
ャリア43を搬送部材41により入換帯域17の前段吊
持部材下方位置17bに移送する(図中の操作矢印■)
。このとき、第1の基板ホルダ51は、後段吊持部材下
方位置17aで吊り上げられている第2の基板ホルダ5
3の下を通って移動することになる。
When the formation of the thin film on the substrate set in the first substrate holder 51 is completed, as shown in FIG. 1B, the gate valve 3
1, and the rear carrier 43 carrying the first substrate holder 51 is transferred to the lower position 17b of the front suspension member of the exchange zone 17 by the transport member 41 (operation arrow ■ in the figure).
. At this time, the first substrate holder 51 is attached to the second substrate holder 5 which is suspended at the lower position 17a of the rear suspension member.
It will move under 3.

次に第1C図に示すように、移送してきた第1の基板ホ
ルダ51を、前段吊持部材21により奥側キャリア43
上から吊り上げ(矢印■)、奥側キャリア43を搬送部
材41により後段吊持部材下方位置17aに移動させ(
矢印■)、後段吊持部材19を下げて第2の基板ホルダ
53を奥側キャリア43上に搭載させる(矢印■)。
Next, as shown in FIG. 1C, the transferred first substrate holder 51 is moved to the rear carrier 43 by the front suspension member 21.
Lift it up from above (arrow ■) and move the rear carrier 43 to the lower position 17a of the rear suspension member using the conveyance member 41 (
(arrow ■), the rear suspension member 19 is lowered to mount the second substrate holder 53 on the rear carrier 43 (arrow ■).

次に、第1D図に示すように、奥側キャリア43を成膜
帯域13に移送し、ゲートバルブ31を閉じる(矢印■
)。
Next, as shown in FIG. 1D, the back carrier 43 is transferred to the film forming zone 13, and the gate valve 31 is closed (arrow
).

次に第1E図に示すように、ゲートバルブ33を開き、
新たな基板がセットされた第3の基板ホルダ55を搭載
する入口側キャリア45を、予備排気室23から入換真
空室15の後段吊持部材下方位置17aまで移動させる
(矢印■)。このとき、第3の基板ホルダ55は、前段
吊持部材21により吊り上げられている第1の基板ホル
ダ51の下を通り抜けることになる。
Next, as shown in FIG. 1E, open the gate valve 33,
The inlet side carrier 45 carrying the third substrate holder 55 with a new substrate set thereon is moved from the preliminary exhaust chamber 23 to the lower position 17a of the rear suspension member of the shunting vacuum chamber 15 (arrow ■). At this time, the third substrate holder 55 passes under the first substrate holder 51 suspended by the front suspension member 21.

次に第1F図に示すように、第3の基板ホルダ55を後
段吊持部材19により入口側キャリア45上から吊り上
げ(矢印■)、入口側キャリア45を前段吊持部材下方
位置17bに移動させ(矢印■)、この上に吊り上げら
れていた第1の基板ホルダ51を下降させて入口側キャ
リア45上に搭載する(第1G図、矢印■)。
Next, as shown in FIG. 1F, the third substrate holder 55 is lifted from above the entrance side carrier 45 by the rear suspension member 19 (arrow ■), and the entrance side carrier 45 is moved to the lower position 17b of the front suspension member. (arrow ■), the first substrate holder 51 that had been lifted above this is lowered and mounted on the entrance side carrier 45 (Fig. 1G, arrow ■).

ついで第1H図に示すように、第1の基板ホルダ51を
搭載した入口側キャリア45を予備排気室23に移動し
、ゲートバルブ33を閉じる(矢印[相])。
Next, as shown in FIG. 1H, the inlet side carrier 45 carrying the first substrate holder 51 is moved to the preliminary exhaust chamber 23, and the gate valve 33 is closed (arrow [phase]).

ついで第1工図に示すように、予備排気室23を大気に
開放したのち入口側のゲートバルブ35を開いて、入口
側キャリア45を装置外部27に移動させ(矢印0)、
第1の基板ホルダ51を装置外部27に取出す。装置外
部27はクリーンルームとなっており、第1の基板ホル
ダ51を次工程に送る(第1J図、矢印■)。
Next, as shown in the first construction drawing, after opening the preliminary exhaust chamber 23 to the atmosphere, the gate valve 35 on the inlet side is opened, and the inlet side carrier 45 is moved to the outside of the device 27 (arrow 0).
The first substrate holder 51 is taken out to the outside of the apparatus 27. The outside of the apparatus 27 is a clean room, and the first substrate holder 51 is sent to the next process (Fig. 1J, arrow ■).

ついで、表面を洗浄した新たな基板をセットした第4の
基板ホルダ57を入口側キャリアに載せ、予備排気室2
3に搬送しく第1K図、矢印0)、予備排気室23のゲ
ートバルブ35を閉じて真空排気することにより、第1
A図の状態に戻る。以下、この操作を繰り得すことによ
り、連続的に、しかも1つの装置出入口から基板ホルダ
の出入れが可能となる。
Next, the fourth substrate holder 57 with a new substrate whose surface has been cleaned is placed on the inlet side carrier, and the preliminary exhaust chamber 2 is placed.
1K, arrow 0), the gate valve 35 of the preliminary evacuation chamber 23 is closed to evacuate the first evacuation chamber 23.
Return to the state shown in Figure A. Thereafter, by repeating this operation, the substrate holder can be taken in and out continuously through one device entrance/exit.

第3A〜工図および第4図は、本発明の他の実施例を示
す説明図であり、予備排気室23を用いない点、即ち、
基板の装置内への搬入および搬出の際に入換真空室15
が直接大気に曝される点を除いて、第1,2図と同様の
構成である。
3A to drawings and FIG. 4 are explanatory views showing other embodiments of the present invention, in which the preliminary exhaust chamber 23 is not used, that is,
A switching vacuum chamber 15 is used when carrying substrates into and out of the apparatus.
The structure is similar to that shown in Figs. 1 and 2, except that it is directly exposed to the atmosphere.

操作手順もほぼ同様であるので、図面に沿って簡単に説
明する。
Since the operating procedures are almost the same, a brief explanation will be given according to the drawings.

■ 第3A図 ゲートバルブ31,33 :閉。第1の基板ホルダ51
:奥側キャリア43上に搭載されて成膜帯域13で蒸着
処理。第2の基板ホルダ53:後段吊持部材19により
吊り上げ、回転されて、入換帯域17の後段吊持部材下
方位置17aで予備加熱中。第3の基板ホルダ55:洗
浄済の新たな基板がセットされ、入口側キャリア45に
搭載されて、装置外27に時期。
■ Figure 3A Gate valves 31, 33: Closed. First substrate holder 51
: Mounted on the rear carrier 43 and subjected to vapor deposition processing in the film forming zone 13. Second substrate holder 53: Lifted and rotated by the rear suspension member 19, and being preheated at the lower position 17a of the rear suspension member in the exchange zone 17. Third substrate holder 55: A new cleaned substrate is set, mounted on the inlet side carrier 45, and placed outside the apparatus 27.

■ 第3B図 ゲートバルブ31:開。第1の基板ホルダ51:基板の
成膜が終了し、奥側キャリア43に搭載され、第2の基
板ホルダ53の下を通り抜けて前段吊持部材下方位置1
7bに移動(■)。
■ Figure 3B Gate valve 31: Open. First substrate holder 51: After the film formation of the substrate is completed, it is mounted on the back side carrier 43, passes under the second substrate holder 53, and moves to the lower position 1 of the front suspension member.
Move to 7b (■).

■ 第3C図 第1の基板ホルダ51:前段吊持部材21により吊り上
げ(■)。奥側キャリア43:後段吊持部材下方位置1
7aへ移動(■)。第2の基板ホルダ53:奥側キャリ
ア43上に下降、搭載(■)。
■ FIG. 3C First substrate holder 51: Lifted up by the front suspension member 21 (■). Back side carrier 43: rear suspension member lower position 1
Move to 7a (■). Second board holder 53: lowered and mounted on the rear carrier 43 (■).

■ 第3D図 第2の基板ホルダ53:奥側キャリア43に搭載されて
成膜帯域13へ移動(■)、ゲートバルブ31:閉。
■ Fig. 3D Second substrate holder 53: mounted on the back carrier 43 and moved to the film forming zone 13 (■), gate valve 31: closed.

■ 第3E図 ゲートバルブ33:入換帯域17(17a + 17b
)の大気へのリーク後に開。第3の基板ホルダ55:入
口側キャリア45に搭載されて、第1の基板ホルダ51
の下を通り抜けて後段吊持部材下方位置17bに移動(
■)。
■ Figure 3E Gate valve 33: Shunting zone 17 (17a + 17b
) opens after leaking into the atmosphere. Third substrate holder 55: mounted on the inlet side carrier 45 and connected to the first substrate holder 51
, and moves to the lower position 17b of the rear suspension member (
■).

■ 第3F図 第3の基板ホルダ55:後段吊持部材19により吊り上
げ(■)。入口側キャリア45:前段吊持部材下方位置
17bに移動(■)。
■ FIG. 3F Third board holder 55: Lifted up by rear suspension member 19 (■). Entrance side carrier 45: Moved to the lower position 17b of the front suspension member (■).

■ 第3G図 第1の基板ホルダ51:入口側キャリア45上に下降、
搭載(■)。
■ Fig. 3G First substrate holder 51: lowered onto the entrance side carrier 45,
Equipped (■).

■ 第3H図 第1の基板ホルダ51:入口側キャリア45に搭載され
て装置外27に搬送([相])。
(Fig. 3H) First substrate holder 51: Mounted on the inlet side carrier 45 and transported to the outside of the apparatus 27 ([phase]).

■ 第3工図 ゲートバルブ33:閉、入換帯域17(17a十17b
)の排気。第1の基板ホルダ51:次工程へ送り(@)
■ Third construction gate valve 33: Closed, shunting zone 17 (17a and 17b
) exhaust. First substrate holder 51: Send to next process (@)
.

以下、新たな基板がセットされた基板ホルダ(第3A図
の55)を第31図の入口側キャリア上に搭載すること
により、第3A図の状態に戻る。
Thereafter, the state shown in FIG. 3A is returned by mounting the substrate holder (55 in FIG. 3A) in which a new substrate is set onto the entrance side carrier shown in FIG. 31.

見肌立羞困 本発明の連続真空薄膜成形方法によれば、基板ホルダの
搬出入口側から入換帯域および成膜帯域を連設し、かつ
入換帯域において基板ホルダの移動方向に前段および後
段の吊持部材を連設し、これら吊持部材により基板ホル
ダを上方に吊り上げて他の基板ホルダをその下方を通過
させて前後位置を入れ換えることにより、1つの装置出
入口から装置内への基板の出し入れを行なうことができ
る。よって、新たな基板の用意や、成膜後の基板の次工
程への搬送での自動化対応がしやすく、また、1つのク
リーンルームによって無塵化を実現できるので設備コス
トの低減化が可能となり、工場レイアウトの自由度も大
きくなる。
According to the continuous vacuum thin film forming method of the present invention, an exchange zone and a film forming zone are provided in succession from the loading/unloading entrance side of the substrate holder, and a front stage and a rear stage are provided in the exchange zone in the direction of movement of the substrate holder. By installing hanging members in series, lifting the substrate holder upward by these hanging members, and passing another substrate holder underneath it to switch the front and rear positions, it is possible to transfer the substrate from one equipment entrance into the equipment. You can take things in and out. Therefore, it is easy to automate the preparation of new substrates and the transportation of substrates after film formation to the next process, and since there is no dust in one clean room, it is possible to reduce equipment costs. The degree of freedom in factory layout will also increase.

また、本発明の装置によれば、入口側と奥側の2つの移
送部材を用いることにより、WB単な構成で、能率良く
上記の方法を実施することができる。
Further, according to the apparatus of the present invention, by using two transfer members on the entrance side and the back side, the above method can be efficiently carried out with a simple WB configuration.

さらに、入換帯域(入換真空室)の前段に予備排気帯域
(予備真空室)を設けることにより、入換帯域における
基板の効率的な予備加熱処理や、排気時間の短縮化を実
現できる。
Furthermore, by providing a preliminary evacuation zone (preliminary vacuum chamber) before the shunting zone (shunting vacuum chamber), it is possible to efficiently preheat the substrate in the shunting zone and shorten the evacuation time.

【図面の簡単な説明】[Brief explanation of drawings]

第1A−に図は、本発明の実施例を示す説明図(斜視図
)であり、第2図は第1A図に対応する断面から見た説
明図である。 第3A〜工図は、本発明の他の実施例を示す説明図(斜
視図)であり、第4図は第3A図に対応する断面から見
た説明図である。 11・・・成膜真空室   13・・・成膜帯域15・
・・入換真空室   17・・・入換帯域17a・・・
後段吊持部材下方位置 17b・・・前段吊持部材下方位置 19・・・後段吊持部材  21・・・前段吊持部材2
3・・・予備排気室   25・・・予備排気帯域27
・・・装置外部 :H,33,35・・・ゲートバルブ 41・・・搬送部材    41a・・・駆動ローラ4
1b・・・レール    43・・・奥側キャリア43
a、45a・・・キャリア本体 45・・・入口側キャリア 43b、45b・・・回転
架台51・・・第1の基板ホルダ 53・・・第2の基板ホルダ 55・・・第3の基板ホルダ 61・・・ホルダ回転部材 63・・・ヒータ65・・
・蒸発源     71.73・・・駆動シリンダ75
・・・モータ      77・・・ヒータ第1D図 第1G図 【Oq+
Figure 1A- is an explanatory diagram (perspective view) showing an embodiment of the present invention, and Figure 2 is an explanatory diagram seen from a cross section corresponding to Figure 1A. 3A to 3D are explanatory views (perspective views) showing other embodiments of the present invention, and FIG. 4 is an explanatory view seen from a cross section corresponding to FIG. 3A. 11... Film-forming vacuum chamber 13... Film-forming zone 15.
...Shunting vacuum chamber 17...Shunting zone 17a...
Lower stage suspension member position 17b... Lower stage suspension member position 19... Rear stage suspension member 21... Front stage suspension member 2
3...Preliminary exhaust chamber 25...Preliminary exhaust zone 27
... Outside the device: H, 33, 35 ... Gate valve 41 ... Conveyance member 41a ... Drive roller 4
1b...Rail 43...Back carrier 43
a, 45a...Carrier body 45...Entrance side carrier 43b, 45b...Rotating stand 51...First substrate holder 53...Second substrate holder 55...Third substrate holder 61... Holder rotating member 63... Heater 65...
・Evaporation source 71.73... Drive cylinder 75
...Motor 77...Heater Fig. 1D Fig. 1G [Oq+

Claims (5)

【特許請求の範囲】[Claims] 1.真空処理室入口側から、基板ホルダを上方に吊持し
得る前段および後段の吊持部材が連設された入換帯域と
、基板への薄膜の形成手段を具えた成膜帯域とを順次連
設して真空処理室を構成し、以下の各工程を施すことを
特徴とする連続真空薄膜形成方法。 A工程:薄膜を形成すべき新たな基板を有 する第2の基板ホルダを入換帯域 に位置せしめた状態で、第1の基 板ホルダを成膜帯域に位置させて この基板に成膜する工程 B工程:成膜終了後に、入換帯域を大気に 対して遮蔽した状態で、かつ、第 2の基板ホルダを入換帯域後段の 吊持部材で吊持した状態で、第2 の基板ホルダの下方を通過させて、 第1の基板ホルダを成膜帯域から 入換帯域前段の吊持部材の下方位 置に移送する工程 C工程:第1の基板ホルダを入換帯域前段 の吊持部材で吊持するとともに、 第2の基板ホルダを降下させて成 膜帯域へ移送し、成膜帯域と入換 帯域との間を真空的に遮蔽する工 程 D工程:第1の基板ホルダを入換帯域で吊 持した状態で入換帯域を大気また は他の真空室に開放し、第1の基 板ホルダの下方を通過させて、成 膜すべき新たな基板を有する第3 の基板ホルダを真空処理室入口側 から入換帯域に搬入し、後段の吊 持部材の下方位置に移送する工程 E工程:第1の基板ホルダを下降させ真空 処理室入口側に向かって移送し、 真空処理室外に搬出する工程 F工程:成膜帯域に位置する基板ホルダを 第1の基板ホルダ、入換帯域に位 置する基板ホルダを第2の基板ホ ルダと読み替え、上記A〜Eの各 工程を繰り返す工程
1. From the entrance side of the vacuum processing chamber, an exchange zone in which front and rear suspension members capable of suspending the substrate holder are connected in sequence, and a film forming zone equipped with means for forming a thin film on the substrate are connected in sequence. 1. A continuous vacuum thin film forming method, characterized in that the following steps are performed in a vacuum processing chamber. Step A: Step B of positioning the first substrate holder in the deposition zone and depositing a film on this substrate while the second substrate holder holding the new substrate on which the thin film is to be formed is positioned in the exchange zone. Process: After the film formation is completed, with the exchange zone shielded from the atmosphere and with the second substrate holder suspended by the suspension member at the rear of the exchange zone, the second substrate holder is placed under the second substrate holder. C process of transferring the first substrate holder from the film forming zone to a position below the suspension member in the front stage of the exchange zone: The first substrate holder is suspended by the suspension member in the front stage of the exchange zone. At the same time, the second substrate holder is lowered and transferred to the film formation zone, and the space between the film formation zone and the exchange zone is vacuum-shielded.Step D: The first substrate holder is suspended in the exchange zone. The exchange zone is opened to the atmosphere or another vacuum chamber while holding the substrate, and the third substrate holder containing the new substrate to be deposited is placed on the entrance side of the vacuum processing chamber by passing it under the first substrate holder. Step E, in which the first substrate holder is carried into the shunting zone and transferred to a position below the subsequent suspension member; Step F, in which the first substrate holder is lowered and transferred toward the vacuum processing chamber entrance side, and carried out to the outside of the vacuum processing chamber. Process: A step in which the substrate holder located in the film formation zone is read as the first substrate holder, and the substrate holder located in the exchange zone is read as the second substrate holder, and the steps A to E above are repeated.
2.真空処理室の入換帯域より入口側に予備排気帯域を
設け、基板ホルダの入換帯域への搬入に際しては、予備
排気帯域と入換帯域とを真空的に遮蔽した状態で基板ホ
ルダを予備排気帯域に移送し、予備排気帯域を真空排気
したのち予備排気帯域を入換帯域に対して開放して、基
板ホルダを入換帯域内に搬入し、一方、基板ホルダの入
換帯域からの搬出に際しては、基板ホルダを予備排気帯
域に移送したのち予備排気帯域と入換帯域とを真空的に
遮蔽し、予備排気帯域を大気に開放して基板ホルダを外
部に搬出する請求項1記載の連続真空薄膜形成方法。
2. A preliminary evacuation zone is provided on the inlet side of the exchange zone of the vacuum processing chamber, and when the substrate holder is brought into the exchange zone, the substrate holder is pre-exhausted with the preliminary exhaust zone and the exchange zone shielded by vacuum. After the pre-evacuation zone is evacuated, the pre-evacuation zone is opened to the shunting zone, and the substrate holder is carried into the shunting zone. The continuous vacuum system according to claim 1, wherein after the substrate holder is transferred to the preliminary evacuation zone, the preliminary evacuation zone and the exchange zone are vacuum-shielded, the preliminary evacuation zone is opened to the atmosphere, and the substrate holder is transported outside. Thin film formation method.
3.成膜帯域への基板ホルダの移送に先立って、入換帯
域にある基板ホルダの基板を加熱処理する請求項1また
は2に記載の連続真空薄膜形成方法。
3. 3. The continuous vacuum thin film forming method according to claim 1, wherein the substrate of the substrate holder in the exchange zone is heat-treated prior to transferring the substrate holder to the film forming zone.
4.基板ホルダを上昇・下降自在に吊持しうる前段およ
び後段の吊持部材が、基板ホルダの移送方向に連設され
た入換真空室と、 成膜手段を具えた成膜真空室と、 入換真空室と成膜真空室とを真空的に遮蔽 −開放自在な第1の開閉部材と、 入換真空室を大気または他の真空室に対し て遮蔽−開放自在な第2の開閉部材と、 入換真空室外部−入換真空室の前段吊持部 材下方位置−入換真空室の後段吊持部材下方位置間を往
復移動して、基板ホルダを搭載搬送する入口側移送部材
と、 成膜真空室−入換真空室の後段吊持部材下 方位置−入換真空室の前段吊持部材下方位置間を往復移
動して、基板ホルダを搭載搬送する奥側移送部材 とを有することを特徴とする連続真空薄膜形成装置。
4. A shunting vacuum chamber in which front and rear suspension members capable of lifting and lowering the substrate holder are arranged in series in the transfer direction of the substrate holder; a film forming vacuum chamber equipped with a film forming means; a first opening/closing member capable of vacuum-shielding and opening the exchange vacuum chamber and the film-forming vacuum chamber; and a second opening-closing member capable of shielding and opening the exchange vacuum chamber from the atmosphere or other vacuum chambers. , an inlet-side transfer member that loads and transports the substrate holder by reciprocating between the outside of the shunting vacuum chamber, the lower position of the front-stage suspension member of the shunting vacuum chamber, and the lower position of the rear-stage suspension member of the shunt vacuum chamber; It is characterized by having a back-side transfer member that reciprocates between the membrane vacuum chamber, the lower position of the rear-stage suspension member of the shunting vacuum chamber, and the lower position of the front-stage suspension member of the shunting vacuum chamber to mount and transport the substrate holder. Continuous vacuum thin film forming equipment.
5.さらに入換真空室前段に、入換真空室と真空的に遮
蔽−開放自在な予備真空室を有し、入口側移送部材が、
予備真空室外部−予備真空室−入換真空室の前段吊部材
下方位置−入換真空室の後段吊持部材下方位置間を往復
移動して、基板ホルダを搭載搬送する請求項4記載の連
続真空薄膜形成装置。
5. Furthermore, in the front stage of the shunting vacuum chamber, there is a preliminary vacuum chamber that can be vacuum-shielded and opened at will with respect to the shunting vacuum chamber, and the inlet side transfer member is
5. The series according to claim 4, wherein the substrate holder is mounted and transported by reciprocating between the outside of the preliminary vacuum chamber, the preliminary vacuum chamber, the lower position of the front suspension member of the shunting vacuum chamber, and the lower position of the rear suspension member of the shunting vacuum chamber. Vacuum thin film forming equipment.
JP33410989A 1989-12-21 1989-12-21 Continuous formation of thin film in vacuum and device Pending JPH03193873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33410989A JPH03193873A (en) 1989-12-21 1989-12-21 Continuous formation of thin film in vacuum and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33410989A JPH03193873A (en) 1989-12-21 1989-12-21 Continuous formation of thin film in vacuum and device

Publications (1)

Publication Number Publication Date
JPH03193873A true JPH03193873A (en) 1991-08-23

Family

ID=18273626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33410989A Pending JPH03193873A (en) 1989-12-21 1989-12-21 Continuous formation of thin film in vacuum and device

Country Status (1)

Country Link
JP (1) JPH03193873A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993614A (en) * 1996-04-01 1999-11-30 Toray Industries, Inc. Method of manufacturing substrate with thin film, and manufacturing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993614A (en) * 1996-04-01 1999-11-30 Toray Industries, Inc. Method of manufacturing substrate with thin film, and manufacturing apparatus

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