JPH03192759A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make a current flow uniformly through the conductor wiring to improve the electro-migration resistance of the conductor wiring by a method wherein with the conductor wiring divided into a plurality of pieces of routes, the electric resistance values of the divided individual routes are made equal to each other. CONSTITUTION:A conductor wiring to connect two points, A and B, on a semiconductor integrated circuit chip to each other is divided into a plurality of pieces of routes 11 and 12 and at the same time, the electric resistance values of the divided individual routes 11 and 12 are made equal to each other. As a result, as the current densities which are made to flow through a plurality of pieces of the devided individual first and second conductor wirings 11 and 12, become equal to each other and the currents are never concentrated on a specific conductor wiring among the conductor wirings, the currents are made to flow being distributed uniformly through the whole conductor wirings. Thereby, as the generation of damage in a specific part of the conductor wirings is eliminated, the electro-migration resistance of the conductor wirings is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to conductor wiring for semiconductor devices, particularly semiconductor integrated circuits.

As semiconductor integrated circuits have become more highly integrated and faster in recent years, conductor wiring on semiconductor integrated circuit chips is required to withstand large current densities. For this reason, various measures have been taken to prevent the current from concentrating on specific locations of the conductor wiring.

3. Detailed description of the invention 〔overview〕 Concerning conductor wiring for semiconductor integrated circuits.

The purpose is to improve electromigration resistance by ensuring that current flows uniformly through conductor wiring.

In conductor wiring that connects two points on a semiconductor integrated circuit chip, the conductor wiring is divided into multiple paths [Prior art] In order to make the conductor wiring withstand high IT current density, conventionally, the conductor wiring is divided into multiple paths. Efforts were being made to increase the cross-sectional area. A conventional example is shown below.

(Conventional example 1) FIG. 3 is a diagram showing conventional example 1.

In the figure, 31 is A, 8 on the semiconductor integrated circuit chip.
It is a conductor wiring for connecting two points.

In this conventional example, the width of the conductor wiring 31 is increased to increase the cross-sectional area.

(Conventional example 2) FIG. 4 is a diagram showing conventional example 2.

In the figure, 41 is a first conductor wiring, and 42 is a second conductor wiring.

In this conventional example, the conductor wiring is connected to the first conductor wiring 41 and the second conductor wiring.
By dividing the conductor wiring 42 into two and arranging them in parallel, the cross-sectional area of the conductor wiring is increased.

[Problem to be solved by the invention]

(Problems with Conventional Example 1) As shown in FIG.
When a conductor wiring for connecting two points is bent in the middle, the current flowing through the conductor wiring is concentrated inside the bent portion indicated by X in the figure. Therefore, even if the width of the conductor wiring is increased, the current is not distributed uniformly and flows concentrated in a specific portion.

As a result, almost no current flows through the portion indicated by Y in Figure 1, so it is completely wasted.

In this way, in Conventional Example 1, when the conductor wiring is bent, the current is not distributed uniformly and flows concentrated inside the bent part, so the outer part of the total width is used to flow the current. Therefore, damage to the conductor wiring occurs sequentially from the inside of the 5th bend.

The time it takes for this damage to occur is shorter than when the current flows uniformly across the entire width of the R-body wiring. There was a problem.

(Problems with Conventional Example 2) As shown in FIG.
A first conductor wiring 41 is a conductor wiring for connecting two points.
Even when the second conductor wiring 42 is divided into two and arranged in parallel, if the conductor wiring is bent in the middle,
First conductor arrangement at the bend! The path length L41 of 41 is
Since it is longer than the path length L-at of the second conductor wiring 42,
The electrical resistance value of the first conductor wiring 41 is the same as that of the second conductor wiring 42.
becomes larger than the electrical resistance value of As a result, the flow is the second
The current flows concentratedly in the conductor wiring 42 of.

Therefore, even if the conductor wiring is divided, the current will not be distributed uniformly and will concentrate on a specific conductor wiring. As a result, almost no current will flow through the first conductor wiring 41.
It will be completely wasted.

In this way, in Conventional Example 2, when the conductor wiring is bent, the current is not distributed uniformly and concentrates on the conductor wiring inside the bend, so the outside conductor wiring is It's not helpful. For this reason, damage to the conductor wiring occurs sequentially starting from the inside of the bent portion. How long does it take for this damage to occur?

The current will be shorter than if the current flows uniformly across the entire width of the conductor wiring. There was a problem.

(Objective of the present invention) The present invention solves the above-mentioned problems and improves electromigration resistance by allowing current to flow in a uniformly distributed manner in conductor wiring. The purpose is to provide wiring.

[Means to solve the problem]

In order to achieve the above object, the semiconductor device according to the second aspect of the present invention divides the conductor wiring into a plurality of paths in the conductor wiring that connects two points on a semiconductor integrated circuit chip. The electric resistance value of each divided path is made equal to each other.

[For production]

In the present invention, a conductor wiring connecting two points on a semiconductor integrated circuit chip is divided into a plurality of paths.

In addition, the electric resistance values of each divided path are made equal.

As a result, the current density of the current flowing through each of the plurality of conductor wirings divided into two becomes equal to each other, and the current is not concentrated in a specific conductor wiring, so that the current is uniformly distributed throughout the entire conductor wiring. It becomes flowing.

Therefore, damage does not occur in a specific portion of the conductor wiring, and as a result, the electromigration resistance of the conductor wiring is improved.

〔Example〕

(Example 1) FIG. 1 is a diagram showing a first embodiment.

In the figure, 11 is a first conductor wiring, and 12 is a second conductor wiring.

In this embodiment, the conductor wiring is divided into two conductor wirings, a first conductor wiring 11 and a second conductor wiring 12, on the same plane, and the conductor wirings are formed so as to take paths separated from each other.

Path length L1 of first conductor wiring 11 and second conductor wiring 12
The path length L! and are equal to each other. Further, the width of the first conductor wiring 11 and the width of the second conductor arrangement i12 are equal to each other. Therefore, the electrical resistance value of the first conductor wiring 11 and the electrical resistance value of the second conductor wiring 12 are the same.

In the conductor wiring having the structure described above, the current density of the current flowing through the first conductor wiring 11 and the current density of the current flowing through the second conductor wiring 12 are equal to each other. As a result, the current does not concentrate on a specific conductor wiring, so that the current flows in a uniform distribution throughout the entire conductor wiring. Therefore, damage will not occur in specific parts of the conductor wiring.

Electromigration resistance of conductor wiring is improved.

(Example 2) FIG. 2 is a diagram showing a second embodiment.

This embodiment is a modification of the first embodiment.

As can be seen from FIG. 2, the current path lengths indicated by broken lines are the same for all paths. The width of each path is set so that the electrical resistance value is equal. Therefore, in the conductor wiring of this embodiment, the current densities of the currents flowing through the paths of each divided conductor wiring are all equal, so the current does not concentrate on a particular conductor wiring, so that The current will now flow in an evenly distributed manner. Therefore, since damage does not occur in a specific portion of the conductor wiring, the electromigration resistance of the conductor wiring is improved.

〔Effect of the invention〕

According to the present invention, current flows in a uniformly distributed manner through the conductor wiring of a semiconductor integrated circuit.

As a result, it becomes possible to reduce the current density. This reduces the possibility of failure of the conductor wiring, especially disconnection due to electromigration of the conductor wiring, and thus significantly extends the life of the conductor wiring. Therefore, by applying the third invention, the reliability of the semiconductor integrated circuit is significantly improved.

[Brief explanation of drawings]

FIG. 1 is a diagram showing Example 1. FIG. 2 is a diagram showing a second embodiment. Figure 3 is a diagram showing conventional example 1. Figure 4 is a diagram showing conventional example 2. It is.

Claims (1)

[Claims] A conductor wiring connecting two points on a semiconductor integrated circuit chip, characterized in that the conductor wiring is divided into a plurality of paths, and the electrical resistance values of each divided path are made equal. semiconductor device.