JPH0319227Y2 - - Google Patents
Info
- Publication number
- JPH0319227Y2 JPH0319227Y2 JP1985043795U JP4379585U JPH0319227Y2 JP H0319227 Y2 JPH0319227 Y2 JP H0319227Y2 JP 1985043795 U JP1985043795 U JP 1985043795U JP 4379585 U JP4379585 U JP 4379585U JP H0319227 Y2 JPH0319227 Y2 JP H0319227Y2
- Authority
- JP
- Japan
- Prior art keywords
- container
- integrated circuit
- hybrid integrated
- circuit device
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 14
- 230000035882 stress Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【考案の詳細な説明】
〔考案の技術分野〕
この考案は混成集積回路装置に係り、特に配線
回路基板、半導体素子、前記配線回路基板に取着
されたリードを備える放熱台を改良する。[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to a hybrid integrated circuit device, and particularly improves a heat dissipation stand that includes a printed circuit board, a semiconductor element, and a lead attached to the printed circuit board.
従来の混成集積回路装置の一例を第6図に示
す。図において、101は放熱台で厚さ2〜3mm
の銅板で、その上面にセラミツクでなる配線回路
基板(以降基板と略称する)102と、放熱の大
きいトランジスタ103をろう着し、上記基板1
02には外部回路と接続するためのリード10
4,104…が設けられている。なお、上記基板
上には回路パターン、能動素子、受動素子等が設
けられているが一般のものと変わらないので説明
を省略し、図面にも表示を省略してある。また、
105,105…は基板上の回路パターンと、放
熱台に取着されたトランジスタ103とを電気的
に接続するボンデイングワイヤである。さらに放
熱台101の対向辺にはこれを内装する容器(第
7図106)内に取着するための取着孔101
a,101aが設けられており、これにビス(第
7図107}で締付固着される。
An example of a conventional hybrid integrated circuit device is shown in FIG. In the figure, 101 is a heat sink with a thickness of 2 to 3 mm.
A printed circuit board (hereinafter referred to as the board) 102 made of ceramic and a transistor 103 with large heat dissipation are soldered to the upper surface of the copper plate.
02 has a lead 10 for connecting to an external circuit.
4,104... are provided. Note that although circuit patterns, active elements, passive elements, etc. are provided on the substrate, since they are the same as those in general, their explanations are omitted, and their illustrations are also omitted in the drawings. Also,
105, 105... are bonding wires that electrically connect the circuit pattern on the substrate and the transistor 103 attached to the heat sink. Further, on the opposite side of the heat dissipation stand 101, there are attachment holes 101 for attaching it inside the container (FIG. 7 106).
a, 101a are provided, and are fastened to these with screws (107 in Fig. 7).
上記構造の混成集積回路装置では、トランジス
タ103の動作に伴なう発熱によつて放熱台10
1および基板102が昇温する。この昇温によつ
て放熱台と基板との熱膨張率の差によりこの間に
熱的ストレスを生じ、基板に亀裂が起こり正常な
動作が損なわれるという大きな問題がある。この
問題は、特に基板が平板であるために、反(そ)
り、ゆがみ、凹凸等と歪が生じ易く、取着の密着
の劣化、放熱効果の低減、機械的ストレスによる
基板の亀裂などを生ずる。さらに第7図に示すよ
うに、この混成集積回路装置を収納取着する函状
の容器106内への実装にあたつては、容器内壁
の底面106aにしか取着できないので、広い投
影面積を占めるという欠点があつた。
In the hybrid integrated circuit device having the above structure, the heat sink 10 is heated due to the heat generated by the operation of the transistor 103.
1 and the substrate 102 are heated. This temperature rise causes thermal stress due to the difference in thermal expansion coefficient between the heat sink and the substrate, which causes cracks in the substrate and impairs normal operation, which is a major problem. This problem is particularly problematic because the substrate is a flat plate.
It is easy to cause distortion such as warping, unevenness, etc., resulting in poor adhesion, reduced heat dissipation effect, and cracks in the board due to mechanical stress. Furthermore, as shown in FIG. 7, when mounting this hybrid integrated circuit device in a box-shaped container 106 for storing and mounting it, it can be mounted only on the bottom surface 106a of the inner wall of the container, so a large projected area is required. It had the disadvantage of being occupied.
この考案は上述の欠点を除去するためのもの
で、熱的機械的ストレスに強く、かつ製品の小型
化を可能する混成集積回路装置を提供する。
This invention is aimed at eliminating the above-mentioned drawbacks and provides a hybrid integrated circuit device that is resistant to thermal and mechanical stress and allows for miniaturization of the product.
この考案にかかる混成集積回路装置は、その放
熱台1が、この一部側面に形成された平面1a
に、基板102、トランジスタ103、および前
記基板に取着されたリード104,104…を備
えるとともに、前記側面以外の側面にこの混成集
積回路装置を収納取着する容器106内壁の取着
面106b−106cに密接する取着成型面1b
−1cを備えていることを特徴とし、一例の放熱
台11が三角柱状になり、その一側面11aに前
記基板102等が取着され、他の二側面11b−
11cで函状の容器106の内側面106b,1
06cの隅部106b−106cに密接し取着さ
れてなるものである。
In the hybrid integrated circuit device according to this invention, the heat sink 1 has a flat surface 1a formed on a part of the side surface of the heat sink 1.
A mounting surface 106b on the inner wall of the container 106 is provided with a substrate 102, a transistor 103, and leads 104, 104 attached to the substrate, and a side surface other than the above-mentioned side surface for housing and mounting this hybrid integrated circuit device. Attachment molding surface 1b in close contact with 106c
-1c, one example of the heat sink 11 has a triangular prism shape, the substrate 102 etc. is attached to one side 11a, and the other two sides 11b-
Inner surface 106b, 1 of box-shaped container 106 at 11c
06c in close contact with the corners 106b-106c.
以下、この考案を実施例の混成集積回路装置に
つき第1図ないし第5図によつて説明する。な
お、放熱台の他は従来と変わらないので、図面に
同じ符号を付けて示し、説明を省略する。
This invention will be explained below with reference to FIGS. 1 to 5 for a hybrid integrated circuit device according to an embodiment. It should be noted that other than the heat dissipation stand is the same as the conventional one, so the same reference numerals are attached to the drawings and the explanation thereof will be omitted.
第1図aに正面から視た斜視図で、同図bに背
面から視た斜視図で示す放熱台1はその側面の一
部に平面部1aが形成されてここに基板102,
102、トランジスタ103等が取着されてい
る。また、上記平面部1a以外の側面には、この
混成集積回路装置を収納取着する容器(第2図1
06)内における取着面(第2図106b,10
6c)に密接する取着成型面1b,1cを備えて
いる。また、上記取着成型面1b,1cは夫々容
器の取着面106b,106c(互いに直交して
いる)に密接するように設けられている。次に、
上記取着成型面1b,1cは図示のように、互い
の交差を直接交差させても勿論よいが、容器の内
側面の隅部には内方への突起(突き合わせ部)
や、第2図に示すように「まるみ」をもたせて曲
げ形成されたものが多いので、両取着成型面を中
間に任意の形状の面1dを介して交差させるとよ
い。さらに、図示の正面の平面1aは側面より若
干凹に形成しているが、このようにすれば放熱が
支配される取着成型面1b,1cに放熱台1を近
接させることができる利点と、基板102上の回
路配線等が機械的シヨツクに対して保護される利
点がある。次に、両取着成型面1b,1cには取
着孔1e,1eが穿設されており、ここに容器側
面を貫通したねじ(図示省略)で締結される。 The heat dissipation table 1 shown in FIG. 1A is a perspective view seen from the front and in FIG.
102, a transistor 103, etc. are attached. Further, on the side surface other than the flat portion 1a, there is provided a container (see Fig. 2, 1
06) mounting surface in (Fig. 2 106b, 10
6c) are provided with attachment molding surfaces 1b and 1c in close contact with each other. Further, the attachment molding surfaces 1b and 1c are provided in close contact with attachment surfaces 106b and 106c (which are orthogonal to each other) of the container, respectively. next,
Of course, the attachment molding surfaces 1b and 1c may intersect directly with each other as shown in the figure, but there are inward protrusions (butting portions) at the corners of the inner surface of the container.
Or, as shown in FIG. 2, many of them are bent and formed with a "roundness", so it is preferable to have both attachment molded surfaces intersect with a surface 1d of an arbitrary shape interposed therebetween. Furthermore, although the illustrated front plane 1a is formed to be slightly concave than the side surface, this has the advantage that the heat dissipation stand 1 can be brought close to the mounting molding surfaces 1b and 1c where heat dissipation is dominated. There is an advantage that the circuit wiring etc. on the substrate 102 are protected against mechanical shock. Next, attachment holes 1e and 1e are formed in both attachment molding surfaces 1b and 1c, and the container is fastened thereto with a screw (not shown) that penetrates the side surface of the container.
次に、第3図ないし第5図によつて示される別
の実施例は放熱台11が三角柱であり、その一側
面の平面部11aには基板102、トランジスタ
103等が取着され、他の二側面はいずれも夫々
が取着成型面11b,11cであり、互いに直交
し、第5図に示すように容器106の内側面の取
着面106b,106cに夫々密接し、取着成型
面に穿設されている取着孔11e,11cに容器
側面を貫通したねじ(図示省略)で締結される。 Next, in another embodiment shown in FIGS. 3 to 5, the heat dissipation table 11 is a triangular prism, and a substrate 102, a transistor 103, etc. are attached to a flat part 11a on one side, and other The two side surfaces are attachment molding surfaces 11b and 11c, respectively, and are perpendicular to each other, and as shown in FIG. The screws (not shown) passing through the side surface of the container are fastened to the mounting holes 11e and 11c.
なお、第4図a,bには三角柱の取着成型面1
1b,11cと平面11aとの交角の1例を示
し、図aは45°で交差し上面図は直角二等辺形、
図bは60°と30°で交差するものを例示している。
これらの角度は任意で、容器内に取着の容易さ、
取着後の配線の難易、占有されるスペース等を勘
案してきめてよい。 In addition, Fig. 4a and b show the attachment molding surface 1 of the triangular prism.
An example of the intersection angle between 1b, 11c and the plane 11a is shown. Figure a intersects at 45°, and the top view is a right isosceles.
Figure b shows an example of intersection at 60° and 30°.
These angles are arbitrary, depending on ease of installation in the container,
It may be determined by taking into consideration the difficulty of wiring after installation, the space occupied, etc.
この考案によれば、従来の放熱台よりも広い放
熱面積が得られるので、放熱台と基板との熱膨張
率の差による熱的ストレスを低減でき、基板の亀
裂が防止される。
According to this invention, a wider heat radiation area than a conventional heat radiation stand can be obtained, so that thermal stress due to the difference in coefficient of thermal expansion between the heat radiation stand and the substrate can be reduced, and cracks in the substrate can be prevented.
また、基板に生ずる反り、ゆがみ、凹凸等の歪
が生じにくくなるので、取着の密着性が悪くなる
のを回避でき、放熱効果の低減が防止できるとと
もに、機械的ストレスを低減できて基板の亀裂が
防止される。 In addition, distortions such as warping, distortion, and unevenness that occur on the board are less likely to occur, so it is possible to avoid deterioration of the adhesion of the mounting, prevent a reduction in heat dissipation effect, and reduce mechanical stress, which can reduce the mechanical stress of the board. Cracks are prevented.
さらに、容器に実装するにあたり、第2図、第
5図に示すように容器内壁の側面隅部に取着でき
るので、従来使われてなかつた容器隅部が有効に
利用され、製品の小型化が可能になる等の顕著な
多くの利点がある。 Furthermore, when mounting it on a container, it can be attached to the side corner of the inner wall of the container, as shown in Figures 2 and 5, so the corner of the container, which was not used in the past, can be effectively used, making the product more compact. There are many notable advantages, such as the ability to
第1図および第2図はこの考案の一実施例を示
し、第1図aは斜視図、同図bは別の方向から視
た斜視図、第2図は容器内への実装状態を示す斜
視図、第3図ないし第5図は別の一実施例にかか
り、第3図は斜視図、第4図は放熱台の上面図で
図aは二等辺型、図bは不等辺型の各々を示し、
第5図は容器内への実装状態を示す斜視図、第6
図および第7図は従来例にかかり、第6図は斜視
図、第7図は容器内への実装状態を示す斜視図、
である。
1,11……放熱台、1a,11a……放熱台
の平面部、1b,1c,11b,11c……放熱
台の取着成型面、102……基板、103……ト
ランジスタ、104,104……リード、106
……容器、106b,106c……容器の取着
面。
Figures 1 and 2 show an embodiment of this invention, Figure 1a is a perspective view, Figure b is a perspective view from another direction, and Figure 2 shows the state in which it is mounted in a container. The perspective views and FIGS. 3 to 5 show another embodiment, FIG. 3 is a perspective view, and FIG. 4 is a top view of a heat sink, where figure a is an isosceles type and figure b is an isosceles type. Indicate each
Fig. 5 is a perspective view showing the mounting state in the container;
7 and 7 relate to a conventional example, FIG. 6 is a perspective view, and FIG. 7 is a perspective view showing a state in which it is mounted in a container.
It is. DESCRIPTION OF SYMBOLS 1, 11... Heat sink, 1a, 11a... Planar part of heat sink, 1b, 1c, 11b, 11c... Mounting surface of heat sink, 102... Substrate, 103... Transistor, 104, 104... ...Reed, 106
...Container, 106b, 106c... Attachment surface of the container.
Claims (1)
型で、その一側面が配線回路基板、半導体素子、
および前記配線回路基板に取着されたリードを備
え、他の二側面がこの混成集積回路装置を収納取
着する容器内側面の隅部に密接取着する取着成型
面であることを特徴とする混成集積回路装置。 The heat dissipation stand in a hybrid integrated circuit device is approximately triangular prism-shaped, and one side of the heat dissipation stand is shaped like a printed circuit board, a semiconductor element,
and a lead attached to the printed circuit board, and the other two sides are attachment molding surfaces that are closely attached to the corners of the inner side of the container in which the hybrid integrated circuit device is housed and attached. hybrid integrated circuit device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985043795U JPH0319227Y2 (en) | 1985-03-28 | 1985-03-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985043795U JPH0319227Y2 (en) | 1985-03-28 | 1985-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61162059U JPS61162059U (en) | 1986-10-07 |
JPH0319227Y2 true JPH0319227Y2 (en) | 1991-04-23 |
Family
ID=30555788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985043795U Expired JPH0319227Y2 (en) | 1985-03-28 | 1985-03-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0319227Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069959A (en) * | 2011-09-26 | 2013-04-18 | Nissan Motor Co Ltd | Cooling structure of power module |
-
1985
- 1985-03-28 JP JP1985043795U patent/JPH0319227Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS61162059U (en) | 1986-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH04188795A (en) | Heat radiation structure of electronic circuit parts | |
JPH10335580A (en) | Semiconductor package and semiconductor module using it | |
JPH0319227Y2 (en) | ||
JP2002016196A (en) | Lead frame and resin sealed semiconductor device using it | |
JPH0631723Y2 (en) | Semiconductor device | |
JP2538636B2 (en) | Semiconductor device | |
JP2906635B2 (en) | Hybrid integrated circuit device | |
JP3318511B2 (en) | Mounting structure of card type semiconductor device | |
JPH0747915Y2 (en) | Electronic component mounting structure | |
JPH0528800Y2 (en) | ||
JPH0799272A (en) | Electronic circuit packaging body | |
JP2562812Y2 (en) | Hybrid integrated circuit device | |
JPH0644110Y2 (en) | Semiconductor device | |
JPH056715Y2 (en) | ||
JPH0631194U (en) | Hybrid integrated circuit device | |
JP2589641Y2 (en) | Hybrid integrated circuit device | |
JP2522583Y2 (en) | Jumper wire unit with heat radiation fins | |
JPH0729670Y2 (en) | Power supply | |
JPS607522Y2 (en) | microwave equipment | |
JPS6176998U (en) | ||
JPH02265265A (en) | Integrated circuit device | |
JPS605143U (en) | heat sink structure | |
JPH09121008A (en) | Package of semiconductor device | |
JPH01174940U (en) | ||
JPH01272198A (en) | Electronic circuit device |