JPH03190128A - Pattern formation - Google Patents

Abstract

PURPOSE:To avoid the release of a carbon thin film and the cracking as well as to stably form the carbon thin film in sufficient thickness for etching a thin film to be processed by a method wherein, before the formation of the carbon thin film, a layer imposing the tensile inner stress in the inverse direction to that of the compression inner stress imposed on the carbon thin film is formed. CONSTITUTION:Firstly, a thin film 2 to be processed is formed on a substrate 1 and then a SiN layer 3 is formed on said film 2. Next, a carbon thin film 4 is formed on the SiN layer 3 and then an organic high molecular layer 5 is formed on the carbon thin film 4. In such a constitution, since an inner stress is imposed on said carbon thin film 4, the SiN layer 3 is formed to relieve such an inner stress.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a processing method for forming a fine thin film pattern, and in particular, to a processing method for forming a pattern by etching with high-energy particles such as ions. The present invention relates to a suitable high-precision microfabrication method and a thin film element formed using the same.

[Prior Art] In the conventional manufacturing process of thin film devices, a so-called photoetching technique using a resist is mainly used for microfabrication of thin films.

In particular, in recent years, as processing dimensions have become increasingly finer, processing techniques with less undercuts, such as reactive ion etching and ion milling, have come to be used. These techniques have excellent pattern dimensional accuracy.

On the other hand, since the resist is damaged by high-energy ions during etching, a resist with high etching resistance is required. For this reason, various resist materials have been developed. For example, resists containing phenol novolac polymers as a main component have relatively high etching resistance against high-energy ions.

When using the above-mentioned conventional resist, high-energy ions are dealt with by increasing the film thickness. For example, in ion milling using an Ar ion beam, known resists have low etching resistance.
The film thickness is required to be at least twice that of the material to be processed. For this reason,
This was a cause of deterioration in the processing accuracy of pattern formation.

As a means to solve the above-mentioned problems, JP-A-63-7
There is a technique described in Japanese Patent No. 6438 that performs pattern formation using a two-layer film consisting of a carbonaceous thin film and an organic polymer thin film containing silicon. Also, JP-A-63-1688
There is also a technique described in Japanese Patent No. 10 that uses a two-layer film of carbon and photoresist to form a pattern of a magnetic material of a thin film magnetic head.

The above two techniques utilize the property of carbonaceous thin films that they have high etching resistance against high-energy ions.

[Problems to be Solved by the Invention] However, the carbonaceous thin film used in the above-mentioned prior art may crack or peel off from the processed thin film to which it should adhere, either during or after the thin film is formed. There are problems such as. Therefore, a problem arises in that it is difficult to form a carbonaceous thin film of sufficient thickness as an etching mask.

The reason for this is that a large compressive stress exists inside the carbonaceous thin film formed on the thin film to be processed.

The purpose of the present invention is to solve the above-mentioned problems, and to prevent peeling and cracking of the carbonaceous thin film, and to stably form a carbonaceous thin film with a thickness sufficient for etching the thin film to be processed. An object of the present invention is to provide a method for forming a desired pattern on a thin film to be processed.

Another object of the present invention is to provide a thin film element having a desired pattern.

[Means for Solving the Problems] The above object is to form a layer that generates tensile internal stress in the opposite direction to the compressive internal stress generated in the carbonaceous thin film, for example, before forming the carbonaceous thin film. This can be achieved by forming a layer made of silicon nitride or the like.

Further, a step of forming a first layer made of silicon nitride on the surface of the thin film to be processed on the substrate, a step of forming a second layer made of carbonaceous material on the surface of the first layer, and a step of forming a second layer made of carbonaceous material on the surface of the second layer. , a step of forming a third layer made of an organic polymer sensitive to radiation and containing Si, a step of forming a predetermined pattern on the third layer, and using the pattern formed in the third layer as a mask. , a step of forming a pattern on the second layer, and using the pattern formed on the second layer as a mask, the process #
This can also be achieved by a process of forming a desired pattern on the film.

Furthermore, a thin film element having a desired pattern can be achieved by applying the above means to a pattern forming method for a thin film element.

[Function] The pattern forming method according to the present invention includes the following:
Since a layer having tensile stress, for example, a layer made of silicon nitride, is formed, the large compressive stress of the carbonaceous thin film can be alleviated. Therefore, the carbonaceous thin film may peel off from the processed thin film.

Since the carbonaceous thin film that can prevent the occurrence of cranks in the carbonaceous thin film and has high etching resistance against high energy ions can be used as a defect-free mask, a desired pattern can be formed.

That is, a film made of carbonaceous material has high etching resistance against high-energy ions used in ion milling, etc., and can be used as a sufficient etching mask even with a thin film thickness. Furthermore, a film made of carbonaceous material is easily etched by 02 plasma. Therefore, by combining a resist containing Si, a resist pattern can be transferred to a carbonaceous thin film, and the thin film to be processed can be etched with high energy using this pattern as a mask. It becomes possible to form a desired pattern on a thin film.

Furthermore, even when the thin film to be processed has a high step of 5 μm or more and the taper angle (inclination) at the end of the step is 30 degrees or more, the silicon nitride layer can compress the carbonaceous thin film. Pattern accuracy is improved because it is possible to form a relatively thin mask for etching the thin film to be processed by relieving stress and following the steps.

[Example] Next, nine embodiments of the present invention will be described.

A first embodiment of the present invention will be described using FIG. 1.

FIG. 6C is a cross-sectional view of the substrate and the thin film, showing an intermediate state in the process in which the largest number of layers are laminated in this example.

In the intermediate state configuration shown in the cross-sectional view of FIG. 3C, first, a thin film 2 to be processed is formed on a substrate 1, and a 5iNN 3 is formed on this thin film 2 to be processed.

Next, a carbonaceous thin film 4 is formed on this SiN layer 3,
The structure is such that an organic polymer layer 5 is formed on the carbonaceous thin film 4.

The carbonaceous thin film 4 has internal stress, and the SiN layer 3 is formed to relieve this internal stress.

The thickness range of the SiN layer 3 that can relieve the internal stress of the carbonaceous thin film 4 is, for example, as follows.

The internal stress of the carbonaceous thin film 4 varies depending on the film forming method and film forming conditions, but it is all compressive stress and is approximately 0.3
It can be said that it is in the range of ~3 GPa.

On the other hand, the internal stress of 5iNJ (d3) is often a tensile stress, and a layer having a tensile stress of 0.2 to 0.8 GPa can be easily created.

Here, the required thickness of the carbonaceous thin film 4 is 1 μI, its internal stress is 0.7 GPa, and the internal stress of the SiN layer 3 is 0.
Assuming 7 GPa, cracks in the carbonaceous thin film 4.

5iN with a thickness of 0.1 to 2.0 μm to prevent peeling.
Jr! I3 is preferred.

Next, each step of the manufacturing method of this example will be explained.

The first step will be explained using FIG. 1(a).

In the first step, 5iNNj3 is formed on a thin film 2 to be processed on a substrate 1 made of a silicon wafer. The thin film 2 to be processed is made of permalloy, for example. SiN layer 3
can be formed by, for example, a plasma CVD method. Note that a Cu layer or a Si layer may be formed instead of 1 m 3 of SiN.

The plasma CVD method used in this example is S i I-I
.

This method simulates growth in a low-temperature plasma using a mixed gas of NH3 and N2 as raw materials.

Next, the second step will be explained using FIG. 1(b).

In the second step, a carbonaceous thin film 4 mainly made of carbon is formed on the Si layer 3.

The carbonaceous thin film 4 is formed by a vapor deposition method. This method includes, for example, i) a vapor of an organic compound containing C and H, a vapor of an organic compound containing C, H and 0, a vapor of an organic compound containing C, H and N, or a vapor of an organic compound containing C and H; Chemical vapor deposition methods such as plasma CVD, thermal CVD, and optical CVD using vapors of organic compounds containing H, N, and 0 as raw materials; n) Ionizing the same raw material gas as in i) above and ionizing the generated ions. There is an ion beam deposition method in which the material is accelerated by an electric field to collide with the substrate, and 2) a sputtering method using graphite as a target, or a graphite evaporation method.

The structure of the carbonaceous thin film 4 formed by each of the above methods is a-
C: N5 or a-C, etc.

Next, the third step will be explained using FIG. 1(C).

In the third step, an organic polymer J smoke 5 made of an organic polymer sensitive to radiation and containing SL is formed on the carbonaceous thin film 4.

Methods for forming the organic polymer layer 5 include a wet coating method in which a solution of the material to be formed into the layer dissolved in an appropriate solvent is coated by means such as spin coating, and then dried to form a film; There are plasma polymerization methods that use the vapor of

When the thin film 2 to be processed has steps, it is preferable to use a vapor deposition method to form a desired pattern because a thin film having a uniform thickness that follows the steps can be obtained.

As the material used in the wet coating method, a resist containing Si as described in Kobunshi Vol. 37, No. 6 (1988), pages 460 to 463 is used.

In the plasma polymerization method, a vapor of an organic compound that can be polymerized to form a radiation-sensitive polymer;
A mixture with vapor of a Si-containing organic compound, or
Any vapor of a Si-containing organic compound that can be polymerized to form a radiation-sensitive polymer is used as a raw material.

Examples of organic compounds that can form radiation-sensitive polymers through the above polymerization include methyl acrylate, methyl methacrylate, methyl isopropenyl ketone, styrene, P-chlorostyrene, chloromethylstyrene, allyl acrylate, Examples include cryldyl methacrylate.

Examples of Si-containing organic compounds used in combination with these organic compounds include tetramethylsilane, vinyltrimethylsilane, and tetramethoxysilane.

Examples include vinyltrimethoxysilane, hexamethyldisiloxane, hexamethyldisilazane, methicryloxytrimethylsilane, and isopropenyloxylimethylsilane.

Si, which can form the above-mentioned radiation-sensitive polymer
Examples of the organic compounds contained include divinyldimethylsilane, vinylchloromethyldimethylsilane, methacryloxytrimethylsilane, isopropenyloxytrimethylsilane, and the like.

Next, the fourth step will be explained using FIG. 1(d).

In the fourth step, a desired pattern is formed on the organic polymer layer 5 using a known lithography (exposure and development) technique.

Next, the fifth step will be explained using FIG. 1(e).

In the fifth step, a pattern is formed on the carbonaceous thin film 4 using the pattern formed on the organic polymer layer 5 as a mask. As a means for forming this pattern, a dry etching method using 0□ is used.

At this time, the rate at which the organic polymer layer 5 is etched is:
It is necessary that the speed is at least slower than that of the carbonaceous thin film 4. The reason for this is that when the organic polymer layer 5 is etched faster than the carbonaceous thin film 4, the thickness of the organic polymer layer 5 serving as a mask is lower than that of the carbonaceous thin film 4, which is the layer to be etched. It needs to be thicker than the
This is because it becomes difficult to form a desired pattern on the carbonaceous heavy 11K4.

Note that as dry etching using 0□, active ion etching with excellent anisotropy (t<tE) is preferable.

Next, the sixth step will be explained using FIG. 1(f).

In the sixth step, the organic polymer layer 5 is removed. It can be removed using a known photoresist remover.

Next, the seventh process will be explained using FIG. 1(g).

In the seventh step, a pattern is formed on the SiN layer 3 and the thin film to be processed 2 using the pattern formed on the carbonaceous thin film 4 as a mask. As a pattern forming method, ion etching with excellent anisotropy or ion milling is used.

Next, the eighth step will be explained using FIG. 1(h).

In the eighth step, carbonaceous thin film 4 and SiN layer 3
remove. The carbonaceous thin film 4 is removed by dry etching using 02, and the SiN layer 3 is removed by ion etching or ion milling.

Note that if there is no problem even if the 5iNJf 13 and the carbonaceous thin film 4 are left, the eighth step can be omitted.

Next, in this example. The functions of the SiN layer 3 and the carbonaceous thin film 4 will be explained.

When etching the thin film 2 to be processed using high-energy ions to form a desired pattern, the thinner the layer that serves as the mask is, the more accurately the mask itself can be formed. This is convenient for increasing the precision of pattern formation of the thin film 2 to be processed.

Furthermore, since the mask itself is etched by high-energy ions at the same time as the thin film 2 to be processed, it must be made of a material with high etching resistance against high-energy ions.

Carbonaceous thin film 4 is suitable as a material that satisfies the above requirements.

By the way, as described above, the carbonaceous eight prongs 4 generate internal stress, and although the magnitude of the internal stress varies depending on the film forming conditions and the like, all of the internal stress becomes compressive stress.

Therefore, if the carbonaceous thin film 4 is formed directly on the thin film 2 to be processed, there is a possibility that the carbonaceous thin film 4 will generate cracks or peel off from the thin film 2 to be processed. . For this reason, even though a mask is originally required, there may be a portion without a mask.

According to research conducted by the present inventors, it has been found that in order to prevent the occurrence of cracks, peeling, etc., it is sufficient to cancel the compressive stress generated in the carbonaceous thin film 4.

It has been found that for this purpose, it is better to use a material that generates tensile stress, which is opposite to the compressive stress that occurs in carbonaceous material 4.

For this purpose, in the first step, 5iNJd3, which generates tensile stress, is formed on the thin film 4 to be processed, prior to forming the carbonaceous heavy layer B944.

As a result, the compressive stress generated in the carbonaceous thin film 4 is as follows.

This prevents the thin film from peeling off. Therefore, the portion that requires a mask is reliably masked, and a desired pattern can be formed on the thin film 2 to be processed. Moreover, since a carbonaceous thin film having high etching resistance against high-energy ions is used, the mask can be formed thinly and etching accuracy can be improved.

Therefore, by using the above method, a thin film element having a desired pattern can be obtained.

Furthermore, if the thin film 2 to be processed has a high level difference, for example,
By using the method of this embodiment for forming the track portion of a thin-film magnetic head, the desired 1-rack width can be obtained and the memory capacity can be increased.

Next, a second embodiment of the present invention will be described.

A silicon wafer with a diameter of 3 inches is used as a substrate, and a 1.5 μm thick permalloy (Ni-Fe) J-
was formed by a sputter link method to form a thin film to be processed.

Next, on this permalloy layer, a 0.8 μm thick S layer was applied.
The iN layer was formed by plasma CVD.

The film forming conditions at this time were as follows.

SiH, introduced amount: l O5CCM NH3 introduction amount: 45SCCM N2 introduction amount: 230SCCM Gas pressure crab 100Pa Salt crab 400W Substrate heating temperature: 200℃ Time: 32m1n Power frequency: 13.56MHz Subsequently, a carbonaceous film was created in the following order.

First, a pair of disk-shaped parallel plate electrodes with a radius of 10 QI were installed inside a stainless steel vacuum chamber.

Next, one of the electrodes was electrically connected to a high frequency power source via a matching box, and the other electrode was grounded together with the vacuum chamber. The above substrate was placed on the high frequency application side electrode of the plasma CVD apparatus, and the substrate was heated to 200°C.

Next, after evacuating the vacuum chamber to a degree of vacuum of 1 x 10-'Pa, n-hexane was supplied at a rate of 10 vs. Ta.

Next, add a frequency of 13.56MHz to the electrode on the board installation side.
A high frequency power of 200 W was applied to generate plasma, and this state was maintained for 20 minutes.

After that, stop the application, purge with N2, and return to atmospheric pressure.
As a result of taking out a part of the substrate and observing it with a SEM, it was found that an amorphous carbon layer with a thickness of 0.9 μm was formed as a carbonaceous a film. (Hereinafter, blank space) Next, a commercially available organosilicon resist (RU-1600P manufactured by Hitachi Chemical Co., Ltd., viscosity 15 cSt) was applied on the amorphous carbon layer.
After spin coating, the solvent was evaporated to form an organic polymer layer with a thickness of 1 μm.

After passing ultraviolet light at an energy of 500mJ/cj (365nm) through a photomask with a 5μ line and space pattern on the substrate that had undergone the above steps, a 0.7% tetramethylammonium hydroxide aqueous solution was applied. The organic polymer layer was immersed in water for 2 minutes and developed to form a pattern on the organic polymer layer.

Next, the substrate with the pattern formed on the organic polymer layer is
The same equipment used to form the amorphous carbon layer above,
After installing it on the same electrode side and evacuating it, 02 gas was introduced through a flow lid at a rate of 5 mfi per minute, the internal pressure was set to 1.3 Pa, and discharge was performed with high frequency power of 100 W for 30 minutes.

Thereafter, the introduction of 0□ gas into the vacuum chamber was stopped, and the vacuum chamber was evacuated and N2 gas was introduced to return the pressure to atmospheric pressure.

In this way, using the pattern formed on the organic polymer layer as a mask, a pattern was formed on the amorphous carbon layer to expose the SiN layer.

Next, this substrate was coated with a stripping solution (Tokyo Ohka Kogyo Co., Ltd.) at 80°C.
IllS-10) for 10 minutes to remove the organic polymer layer.

Next, ion milling of the SiN layer and the permalloy layer was performed as follows.

Place the substrate in the substrate holder of the ion milling device, set the acceleration voltage to 700■, the deceleration voltage to 200■, and the arc voltage to 8.
0V, Ar flow 15ml/min, ion incidence angle 0
ion milling was performed for 80 minutes. By the above etching, the exposed portion of the SiN layer and the underlying permalloy layer were removed.

SEM of the substrate after pattern formation as described above.
When observed, no peeling or cranking was observed in the pattern of the amorphous carbon layer.

Finally, the upper gd amorphous carbon layer and the SiN layer were coated using the same equipment and under the same conditions as those used to form the pattern.
The N layer pattern was removed in sequence.

After completing all the steps, the pattern width of the permalloy layer was observed using SEM, and the distribution was 5.1±0.2.
It was within the range of 5 μm and had excellent pattern accuracy. Furthermore, no pattern omissions, chips, or deformations caused by peeling or cracking of the amorphous carbon layer were observed over the entire surface of the substrate.

Next, a third embodiment of the present invention will be described.

In this example, in exactly the same manner as in Example 2, a 1.5 μm thick Permalloy layer pattern (5 μI wide lines and spaces) was formed on a silicon wafer serving as a substrate.

However, in the case of this example, after forming a pattern on the permalloy layer, the SiN layer and the amorphous carbon layer were not removed, and both remained, and the substrate was heated to a temperature of 200°C on the amorphous carbon layer. An20.degree. C. condition was used as a protective film. was formed to a thickness of 1 μm by sputtering.

In this embodiment, AM20. After the film was formed, the substrate was returned to the chamber and observed with an SEM. As a result, no peeling or cracks were observed in the pattern of the amorphous carbon layer. In addition, the pattern width distribution of the permalloy layer is 5
．． It was within the range of 0±0.20 μI, and had excellent dimensional accuracy.

Next, a fourth embodiment of the present invention will be described.

In this example, except for the formation of an organic polymer layer and its patterning, the process was completely the same as in the second example, and a pattern was formed on permalloy.

An organic polymer Nod which is sensitive to radiation and contains Si was formed as a resist pattern 1 by plasma polymerization.

Using the same device as that used to form the amorphous carbon layer in the second example, the following procedure was used to obtain a thickness of 0.
An organic polymer with a thickness of 3 μm was formed.

Place the board on the ground side* pole heated to 80”C.

After evacuating the inside of the vacuum chamber to lXl0-'Pa, a mixed gas of methyl isopropenyl ketone and vinyltrimethylsilane at a mixing ratio of 1:1 was pumped at a rate of 511 m/min in terms of atmospheric pressure.
The internal pressure was maintained at 1 OPa by supplying IQ and adjusting the pumping speed. Next, apply a frequency of 13.0 to the non-grounded electrode.
56M11z and high frequency power SOW was applied to generate plasma, and plasma submergence was performed for 20 minutes.

The procedure for forming a pattern on the organic polymer layer was performed as follows.

The organic polymer layer was irradiated with far ultraviolet rays (irradiation energy, 5000 mJ/cm at 254 nm) through a quartz mask with a 5μ linear ant space pattern.
) L was then immersed in a mixed solvent of water and isopropyl alcohol at a volume ratio of -1:4 and developed to form a pattern on the organic polymer layer.

After completing all the steps in this example, IIM observation of the pattern width of the permalloy layer using SEM revealed that the distribution was within the range of 5.2±0.30 μm, indicating excellent pattern accuracy. Ta. Further, over the entire surface of the substrate, no pattern omission, chipping, or deformation of the permalloy layer due to peeling or cracking of the amorphous carbon layer was observed.

Next, a fifth embodiment of the present invention will be described using FIG. 3.

In this embodiment, a 20μ
A pattern of polyimide resin (PIQ, manufactured by Hitachi Chemical Co., Ltd.) 16 with a thickness of 10 μm is formed with lines and spaces of m, and using this as a substrate, a permalloy layer 17 is formed in exactly the same manner as in the fourth example. I got the pattern.

Note that the taper angle (inclination of the pattern edge) of the pattern of the polyimide resin 16 at this time was 40 degrees. Further, the pattern formed on the permalloy layer 17 was formed to be orthogonal to the pattern of the polyimide resin 16.

In this example, the pattern width distribution is 5.0±0.
It was within the range of 30 μm and had excellent accuracy. In particular, the accuracy in the very vicinity of the polyimide resin 160 level difference was also within the above range, and had excellent accuracy without being affected by the pattern level difference. Furthermore, no peeling of the amorphous carbon layer 14a, and no omission, chipping, or deformation of the pattern of the permalloy layer 17 due to cracks were observed.

Next, a sixth embodiment of the present invention will be described.

An embodiment of a track width processing method during manufacturing of a thin film magnetic head will be described with reference to FIG.

Figure (a) is a cross-sectional view showing one step of the method for manufacturing a thin-film magnetic head, and the partial plan view of the upper core layer of the thin-film magnetic head shown in figure (b) is cut along the lla line. FIG.

In FIG. 2A, a lower core layer 7 made of permalloy is formed on a nonmagnetic substrate 6. As shown in FIG.

Above the lower core JTL 7, an An
20. A cap layer 8 is formed.

An insulating layer 9 made of polyimide resin is formed on the gap layer 8 to insulate the conductor coil 10. Further, on the insulating layer 9, a conductor coil 10 made of Cu is formed in a spiral shape, and on top of the insulating layer 11 or an insulator 719, a conductor coil 10 is formed to insulate the conductor coil 10. It is formed to surround. Both ends of the absolute M layers 9 and 11 are inclined at a predetermined angle, not necessarily at right angles, to the lower core layer 7, and have a flat trapezoidal shape as a whole.

Next, an upper core j-12 is formed with steps so as to be in contact with the lower core layer 7 and to surround the insulating layers 9 and 11.

On the upper core layer 12, a SiN layer 3a, an amorphous carbon layer 14, and an organic polymer layer 5a are sequentially formed.
It is formed following the shape of the upper core layer 12.

FIG. 2B is a partial plan view of the upper core layer of the thin film magnetic head, as described above.

In the same figure (b), the thin 11!4 magnetic head consists of an upper core layer 12, a conductor coil 10, etc., and has a track %W.
is processed to the desired width.

Next, regarding an example of the 1-rack axis machining method of the present invention,
The steps will be explained in order.

In the first step, permalloy is sputtered to a thickness of 1.5 μm on the nonmagnetic substrate 6 and formed into a predetermined pattern by photoetching technology to form the lower core layer 7.

In the second step, AQ, 0. is formed to a thickness of 0.5 μm by sputtering, and a gap layer 8 is formed using photoetching technology.

In the third step, polyimide resin (Hitachi Chemical Co., Ltd. fJIPIQ) is spin-coated, heated and cured, and a pattern is formed using photoetching technology to a thickness of 2 μm.
It is assumed that the insulating layer 9 is m.

In the fourth step, using plasma CVD method, Cu
is formed to have a thickness of 1.5 μm, and then a spiral pattern is formed using photoetching technology to form the conductor coil 10.

In the fifth step, an insulating film of polyimide resin is formed on the conductor coil 10, and an insulating layer 1 with a thickness of 2.5 μm is formed.
Set to 1.

In the sixth step, permalloy is formed to a thickness of 1.5 .mu.m by sputtering to form the upper core layer 12.

In the seventh step, a pattern is formed on the upper core calendar 12 thus formed in exactly the same manner as in the fourth embodiment. However, the thickness of the amorphous carbon layer 14 is 1.5 μm. That is, a desired pattern is formed in the upper core layer 12 using a three-layer film consisting of the SiN layer 3a, the amorphous carbon layer 14, and the organic polymer layer 5a formed by plasma polymerization.

The width of the tip of the upper core is track lII & iW,
This distribution was within the range of 10±0.75 μm, indicating high accuracy. At this time, the element yield within the substrate (approximately 400 elements) was 97%, which was a high yield. Furthermore, no pattern omissions, chips, or deformations due to peeling or cracking of the amorphous carbon layer 14 were observed.

Finally, as a protective film (not shown), a 10 μm thick AQ20. was formed by sputtering.

The writing and reading characteristics of the magnetic head obtained by the above method had practically satisfactory performance.

For comparison, a thin film magnetic head was fabricated in the same manner as in the sixth embodiment except that the SiN layer 3a was not formed.

In the manufacturing process of the thin film magnetic head formed in this manner, during etching of the upper core layer.

Part of the amorphous carbon layer peeled off at the interface between the amorphous carbon layer and the upper core layer.

As a result, a pattern formed during etching had no magnetic film at locations where the amorphous carbon layer had peeled off, and desired magnetic properties could not be obtained.

[Effects of the Invention] According to the present invention, it is possible to eliminate peeling of a carbonaceous thin film from a processed thin film, cracking in the carbonaceous thin film, cracking, etc. that occur due to the large internal stress of the carbonaceous thin film. Therefore, it is possible to make full use of the excellent etching resistance of the carbonaceous thin film and form a desired pattern on the thin film to be processed.

Furthermore, when the pattern formation method according to the present invention is applied to pattern formation of the upper core track portion of a thin film magnetic head,
This has a great effect on improving pattern accuracy.

[Brief explanation of drawings]

FIG. 1 is a process diagram showing an embodiment of the pattern forming method according to the present invention, and FIG. 2 is a partial enlarged sectional view (a) and a partial plan view (a) of a thin film magnetic head formed using the method shown in FIG. b), where (a) is a cross section taken along the line ■a in (b), and FIG. 3 is a partial enlarged cross section of a thin +1!4 formed using an embodiment of the pattern forming method according to the present invention. Show the diagram. Morphous carbon layer, 15... silicon wafer, 1
6... Polyimide resin, 17... Permalloy layer,
W...Track width.

Claims (1)

[Claims] 1. When forming a carbonaceous thin film, a layer that generates an internal stress in a direction opposite to that generated in the carbonaceous thin film is formed in advance, and then the carbonaceous thin film is formed. A method for forming a carbonaceous thin film characterized by the following. 2. In a thin-film magnetic head in which a carbonaceous thin film is used as a resist film and a pattern is formed on the substrate by etching using high-energy ions, a layer that generates internal stress in the opposite direction to the internal stress generated in the carbonaceous thin film is used. . A thin film magnetic head, which is formed under the carbonaceous thin film and etched to have a desired pattern. 3. When forming a target pattern on the thin film to be processed formed on the substrate, a step of forming a first layer made of silicon nitride on the surface of the thin film to be processed on the substrate, and on the surface of the first layer,
a step of forming a second layer made of carbonaceous material; a step of forming a third layer made of an organic polymer sensitive to radiation and containing Si on the surface of the second layer; forming a predetermined pattern on the second layer using the pattern formed on the third layer as a mask; and forming a predetermined pattern on the thin film to be processed using the pattern formed on the second layer as a mask. A pattern forming method comprising the steps of: forming a desired pattern. 4. When forming a desired pattern on the thin film to be processed formed on the substrate, a step of forming a first layer made of silicon nitride on the surface of the thin film to be processed on the substrate, and on the surface of the first layer,
a step of forming a second layer made of carbonaceous material; a step of forming a third layer made of an organic polymer sensitive to radiation and containing Si on the surface of the second layer; forming a predetermined pattern on the second layer using the pattern formed on the third layer as a mask; and forming a predetermined pattern on the thin film to be processed using the pattern formed on the second layer as a mask. a step of forming a desired pattern on the
A pattern forming method comprising the step of removing the first layer and the second layer. 5. A thin film magnetic head having track portions formed in a desired pattern using the pattern forming method according to claim 3 or 4. 6. When forming the thin film body, the method includes the step of forming a thin film that generates internal stress in the opposite direction to the direction of internal stress generated in the target thin film on one side of the target thin film. A method for forming a thin film. 7. In a thin film element manufactured by etching with high-energy ions using a resist film made of a carbonaceous thin film, in order to form a desired pattern, internal stress generated in the carbonaceous thin film is etched in a direction opposite to that of the carbonaceous thin film. A thin film element characterized in that it is etched with a layer that causes internal stress formed under the carbonaceous thin film.