JPS5847466B2 - Plasma ashing method - Google Patents
Plasma ashing methodInfo
- Publication number
- JPS5847466B2 JPS5847466B2 JP2932777A JP2932777A JPS5847466B2 JP S5847466 B2 JPS5847466 B2 JP S5847466B2 JP 2932777 A JP2932777 A JP 2932777A JP 2932777 A JP2932777 A JP 2932777A JP S5847466 B2 JPS5847466 B2 JP S5847466B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- photoresist
- hydrogen
- aluminum
- plasma ashing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は集積回路の製作工程にあけるフォトエッチング
に利用されるフォトレジストを除去する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing photoresist used in photoetching in the fabrication process of integrated circuits.
従来からフオ１・レジストの除去は酸素を主成分とする
プラズマ照射法（プラズマアツシング）が行なわれてい
る。Conventionally, photo 1 resist has been removed by a plasma irradiation method (plasma ashing) containing oxygen as a main component.
酸素プラズマ中の酸素ラジカルは活性が非常に強い。Oxygen radicals in oxygen plasma are extremely active.
そのためフォトレジストを除去した後に、基板が酸化さ
れ易い材質である場合、たとえば基板がアルミニウムの
場合Ｏこは、表面の酸化アルミニウム膜が空気中で自然
６こ形或される場合よりもかなり厚くなる欠点がある。Therefore, after removing the photoresist, if the substrate is made of a material that is easily oxidized, for example if the substrate is aluminum, the aluminum oxide film on the surface will be much thicker than if it were naturally formed in the air. There are drawbacks.
この膜は電気絶縁性であるので、りん酸一硝酸の混酸で
エッチングして除去した後に、次の層を付着させる必要
がある。Since this film is electrically insulating, it must be removed by etching with a phosphoric acid mononitric acid mixture before the next layer can be deposited.
また、エッチング前処理として現像時の残膜等有機物系
の残滓を除くために酸素プラズマ照射によりレジストを
ｔｏｏｏ人程度除去することが一般に行われている。Further, as a pre-etching treatment, in order to remove organic residues such as residual films during development, it is generally performed to remove a large amount of the resist by oxygen plasma irradiation.
この後、例えばアルミニウムをプラズマ照射法によりエ
ッチングする場合、前記エッチング前処理の酸素プラズ
マ照射により自然な状態よりも厚く形威されたアルミニ
ウム表面酸化膜がエッチングをさまたげることがある。After that, for example, when aluminum is etched by a plasma irradiation method, the aluminum surface oxide film formed thicker than in its natural state by the oxygen plasma irradiation in the etching pretreatment may hinder etching.
上述の欠点を解消するためにフォトレジストをアルゴン
によってイオンアツシングする方法も提案されているが
、アルゴンイオンは基板までダメジを与える欠点を有す
る。In order to overcome the above-mentioned drawbacks, a method has been proposed in which photoresist is subjected to ion ashes with argon, but argon ions have the drawback of damaging even the substrate.
本発明の目的はこれらの欠点を解消することである。The aim of the invention is to eliminate these drawbacks.
本発明の上記目的は、フォトレジストを水素プラズマに
よって除去することを特徴とするプラズマアツシング方
法によって達戒することができる。The above objects of the present invention can be achieved by a plasma ashing method characterized in that photoresist is removed by hydrogen plasma.
フォトレジストは炭素、水素および酸素からなる合或樹
脂である。Photoresist is a composite resin consisting of carbon, hydrogen and oxygen.
水素プラズマ中の水素ラジカルは、前記炭素および酸素
と反応して炭化水素および水となってフォトレジストが
分解除去される。Hydrogen radicals in the hydrogen plasma react with the carbon and oxygen to form hydrocarbons and water, and the photoresist is decomposed and removed.
このとき水素ラジカルは、基板が酸化され易い金属、た
とえばアルミニウムであっても、これと反応することは
ない。At this time, the hydrogen radicals do not react with the substrate, even if it is a metal that is easily oxidized, such as aluminum.
またフォトレジストはネガ型であってもポジ型であって
もよい。Further, the photoresist may be of a negative type or a positive type.
水素プラズマは真空度約０．３〜約３ Ｔｏｒｒの範囲
が適当である。A suitable vacuum level for the hydrogen plasma is from about 0.3 to about 3 Torr.
水素プラズマによるフォトレジストのアツシング速度は
、酸素プラズマによる場合と比較して、同等ないし１／
２程度であり、特に問題はなかった。The ashes speed of photoresist using hydrogen plasma is the same or 1/1 times faster than that using oxygen plasma.
It was about 2, and there was no particular problem.
実施例
水素プラズマは、真空度Ｉ Ｔｏｒｒの水素をＩＰＣ社
製１１０１型プラズマ発生器に入れ、周波数１ ３．
５ ６ ＭＨｚ，電力１００Ｗで励起させた。Example Hydrogen plasma was produced by putting hydrogen at a vacuum level of I Torr into a 1101 type plasma generator manufactured by IPC Corporation, and at a frequency of 1 3.
It was excited at 56 MHz and a power of 100W.
フォトレジストとしては、東京応化社製のＯＭＲ−８３
型レジストを使用し、これをアルミニウム基板に１μ厚
さに塗布した試片をプラズマ室に入れて、水素プラズマ
に暴露させた。As a photoresist, OMR-83 manufactured by Tokyo Ohka Co., Ltd.
Using a mold resist, a specimen coated on an aluminum substrate to a thickness of 1 μm was placed in a plasma chamber and exposed to hydrogen plasma.
５分経過した後に試片をプラズマ室から取り出した。After 5 minutes had passed, the specimen was removed from the plasma chamber.
フォトレジストは完全に除去されていることを表面あら
さ計および光学顕微鏡６こよって確認した。It was confirmed using a surface roughness meter and an optical microscope 6 that the photoresist had been completely removed.
この後、平行乎板電極型プラズマエッチング装置で四塩
化炭素ガスを含むプラズマを照射しアルミニウムをエッ
チングしたところ良好にエッチングされた。Thereafter, the aluminum was etched by irradiating plasma containing carbon tetrachloride gas using a parallel plate electrode type plasma etching apparatus, and the aluminum was etched well.
Claims (1)
ォトレジストを水素プラズマによって除去することを特
徴とするプラズマアツシング方法。1. A plasma ashing method characterized in that the photoresist is removed by hydrogen plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2932777A JPS5847466B2 (en) | 1977-03-18 | 1977-03-18 | Plasma ashing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2932777A JPS5847466B2 (en) | 1977-03-18 | 1977-03-18 | Plasma ashing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53114742A JPS53114742A (en) | 1978-10-06 |
| JPS5847466B2 true JPS5847466B2 (en) | 1983-10-22 |
Family
ID=12273126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2932777A Expired JPS5847466B2 (en) | 1977-03-18 | 1977-03-18 | Plasma ashing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5847466B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014504446A (en) * | 2010-12-03 | 2014-02-20 | エボニック デグサ ゲーエムベーハー | Method for hydrogen passivation of multiple semiconductor layers |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58123726A (en) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | Method of converting resist into ash-like substance |
| JP2724165B2 (en) * | 1987-08-28 | 1998-03-09 | 株式会社東芝 | Method and apparatus for removing organic compound film |
| JP3193335B2 (en) | 1997-12-12 | 2001-07-30 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| JP2007043079A (en) * | 2005-06-29 | 2007-02-15 | Shibaura Mechatronics Corp | Plasma generator, method for generating plasm and plasma treatment apparatus |
-
1977
- 1977-03-18 JP JP2932777A patent/JPS5847466B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014504446A (en) * | 2010-12-03 | 2014-02-20 | エボニック デグサ ゲーエムベーハー | Method for hydrogen passivation of multiple semiconductor layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53114742A (en) | 1978-10-06 |
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