JPH03183976A - Magnetic sensor - Google Patents
Magnetic sensorInfo
- Publication number
- JPH03183976A JPH03183976A JP1324310A JP32431089A JPH03183976A JP H03183976 A JPH03183976 A JP H03183976A JP 1324310 A JP1324310 A JP 1324310A JP 32431089 A JP32431089 A JP 32431089A JP H03183976 A JPH03183976 A JP H03183976A
- Authority
- JP
- Japan
- Prior art keywords
- sensitivity
- elements
- magnetic sensor
- silicon substrate
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 20
- 230000000694 effects Effects 0.000 abstract description 7
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明はモータ等の位置検出や回転速度制御等に用い
られる磁気センサに関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a magnetic sensor used for position detection, rotational speed control, etc. of a motor or the like.
「従来の技術」
従来の磁気センサの内、強磁性金属の磁気抵抗効果を利
用したものは、ガラス基板上に真空蒸着等によってニッ
ケルー鉄(N i −F e)やコバルト鉄(Co−F
e)等の強磁性金属の合金薄膜を形成した後、フォトリ
ゾグラフィ・プロセス等によって所定のパターンを形成
して作製していた。``Prior art'' Among conventional magnetic sensors, those that utilize the magnetoresistive effect of ferromagnetic metals are made of nickel-iron (Ni-Fe) or cobalt-iron (Co-F) by vacuum deposition on a glass substrate.
After forming a ferromagnetic metal alloy thin film such as e), a predetermined pattern is formed by a photolithography process or the like.
「発明が解決しようとする課題−1
ところで、上述した従来の磁気センサにおいては、感度
の温度特性が悪く(約−4,000ppm/℃)、周囲
の温度が上昇するにつれて磁気センサとしての感度が低
下するという欠点があった。``Problem to be solved by the invention-1 By the way, in the conventional magnetic sensor mentioned above, the temperature characteristic of sensitivity is poor (approximately -4,000 ppm/℃), and as the ambient temperature rises, the sensitivity as a magnetic sensor decreases. The disadvantage was that it decreased.
従って、温度変化の大きい場所でのモータ等の位置検出
や回転速度制御等が正確に行えないという問題があった
。Therefore, there is a problem that position detection and rotational speed control of the motor etc. cannot be performed accurately in a place where temperature changes are large.
この発明は上述した事情に鑑みてなされたもので、感度
の温度特性が上く、周囲の温度が上昇しても感度が低下
しない磁気センサを提供することを目的としている。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a magnetic sensor with improved temperature characteristics of sensitivity and whose sensitivity does not decrease even when the ambient temperature rises.
「課題を解決するための手段」
この発明による磁気センサは、シリコン基板上に強磁性
合金薄膜によって構成される磁気抵抗効果素子を形成す
ると共に、前記シリコン基板上に前記磁気抵抗効果素子
に一定電流を供給する定電流回路を形成することを特徴
としている。"Means for Solving the Problems" A magnetic sensor according to the present invention includes a magnetoresistive element formed of a ferromagnetic alloy thin film on a silicon substrate, and a constant current applied to the magnetoresistive element on the silicon substrate. It is characterized by forming a constant current circuit that supplies .
「作用」
この発明によれば、周囲温度が変化しても、磁気抵抗効
果素子には一定電流が流れているので、この磁気センサ
の感度の温度特性はよく、感度が悪くなることはない。"Operation" According to the present invention, even if the ambient temperature changes, a constant current flows through the magnetoresistive element, so the temperature characteristic of the sensitivity of this magnetic sensor is good and the sensitivity does not deteriorate.
「実施例」
以下、図面を参照してこの発明の一実施例について説明
する。第1図はこの発明の一実施例による磁気センサの
構成を示す斜視図、第2図は第1図の回路図であり、こ
れらの図において、lは液体カプセル結晶引き」二げ法
や水平ブリッジマン法等によって作製されたシリコン(
S i)・バルク単結晶から切り出されたシリコン基板
、2および3はそれぞれニッケルー鉄(Ni−Fe)あ
るいはコバルト−鉄(Co−Fe)等の強磁性合金薄膜
の磁気抵抗効果素子であり、シリコン基板l上に真空蒸
着等によって形成され、フォトリゾグラフィ・プロセス
等によって所定のパターンに形成されている。"Embodiment" Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing the configuration of a magnetic sensor according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of FIG. Silicon produced by Bridgman method etc. (
Si) - A silicon substrate cut out from a bulk single crystal; 2 and 3 are respectively magnetoresistive elements made of ferromagnetic alloy thin films such as nickel-iron (Ni-Fe) or cobalt-iron (Co-Fe); It is formed on the substrate l by vacuum evaporation or the like, and is formed into a predetermined pattern by a photolithography process or the like.
また、4はシリコン基板1上に不純物拡散法等およびフ
ォトリゾグラフィ・プロセス等によって形成された定電
流回路であり、FET(電界効果トランジスタ)5およ
び抵抗6等から構成されている。7は電源電圧VDDが
印加される電源端子、8は出力端子、9は接地端子、1
0〜13は各回路要素2〜4および端子7〜9を電気的
に接続する導体パターンである。Further, 4 is a constant current circuit formed on the silicon substrate 1 by an impurity diffusion method, a photolithography process, etc., and is composed of an FET (field effect transistor) 5, a resistor 6, and the like. 7 is a power supply terminal to which the power supply voltage VDD is applied, 8 is an output terminal, 9 is a ground terminal, 1
0 to 13 are conductor patterns that electrically connect the circuit elements 2 to 4 and the terminals 7 to 9.
このような構成において、まず、この磁気センサをモー
タ等に取り付け、電源端子7と接地端子9との間に電源
電圧Vnoを印加して、磁気抵抗効果素子2および3に
一定電流fcを流す。In such a configuration, first, this magnetic sensor is attached to a motor or the like, and a power supply voltage Vno is applied between the power supply terminal 7 and the ground terminal 9 to cause a constant current fc to flow through the magnetoresistive elements 2 and 3.
これにより、モータ等が回転して磁気抵抗効果素子2お
よび3に磁化を飽和させるのに十分な磁界がシリコン基
板Iの面内に作用すると、出力端子8と接地端子9との
間には、電流と磁化のなす角度θ、即ち、磁界方向によ
って変化する電圧V(θ)が発生する。As a result, when a motor or the like rotates and a magnetic field sufficient to saturate the magnetization of the magnetoresistive elements 2 and 3 acts within the plane of the silicon substrate I, a gap between the output terminal 8 and the ground terminal 9 is generated. A voltage V(θ) is generated that changes depending on the angle θ between the current and magnetization, that is, the direction of the magnetic field.
このような状態において、この磁気センサの周囲温度が
変化しても、磁気抵抗効果素子2および3には一定電流
iCが流れているので、この磁気センサの感度の温度特
性はよく、感度が悪くなることはない。In this state, even if the ambient temperature of this magnetic sensor changes, a constant current iC flows through the magnetoresistive elements 2 and 3, so the temperature characteristics of the sensitivity of this magnetic sensor are good, and the sensitivity is poor. It won't happen.
以上説明したように、磁気抵抗効果素子をシリコン基板
」二に形成し、同一基板上に定電流回路を形成して磁気
抵抗効果素子に一定電流を流すようにたので、感度の温
度特性がよくなり(−500ppm / ℃)、周囲温
度の上昇によって引き起こされる磁気センサの感度の低
下を押さえることができる。As explained above, the magnetoresistive element is formed on a silicon substrate, and a constant current circuit is formed on the same substrate to flow a constant current through the magnetoresistive element, so the temperature characteristics of the sensitivity are good. (-500 ppm/℃), which can suppress the decrease in sensitivity of the magnetic sensor caused by an increase in ambient temperature.
ここで、第3図にこの発明の一実施例による磁気センサ
と従来の磁気センサそれぞれの感度の温度特性を示す。Here, FIG. 3 shows the temperature characteristics of sensitivity of a magnetic sensor according to an embodiment of the present invention and a conventional magnetic sensor.
この図において、曲線aは、この発明の一実施例による
磁気センサの感度の温度特性、曲線すは、従来の磁気セ
ンサの感度の温度特性である。この図かられかるように
、従来の磁気センサに比べて温度特性が格段に改善され
ている。In this figure, curve a is the temperature characteristic of sensitivity of the magnetic sensor according to an embodiment of the present invention, and curve a is the temperature characteristic of sensitivity of the conventional magnetic sensor. As can be seen from this figure, the temperature characteristics are significantly improved compared to conventional magnetic sensors.
「発明の効果」
以上説明したように、この発明によれば、シリコン基板
」二に強磁性合金薄膜によって構成される磁気抵抗効果
素子を形成すると共に、前記シリコン基板上に前記磁気
抵抗効果素子に一定電流を供給する定電流回路を形成し
たので、感度の温度特性がよいという効果がある。"Effects of the Invention" As explained above, according to the present invention, a magnetoresistive element made of a ferromagnetic alloy thin film is formed on a silicon substrate, and the magnetoresistive element is formed on the silicon substrate. Since a constant current circuit that supplies a constant current is formed, there is an effect that the temperature characteristics of sensitivity are good.
これにより、周囲の温度が上昇しても感度が低下しない
という効果がある。This has the effect that sensitivity does not decrease even if the ambient temperature increases.
従って、モータ等の位置検出や回転速度制御等が正確に
行えるという効果がある。Therefore, there is an effect that the position detection and rotational speed control of the motor etc. can be performed accurately.
第1図はこの発明の一実施例による磁気センサの構成を
示す斜視図、第2図は第1図の回路図、第3図はこの発
明の一実施例による磁気センサと従来の磁気センサそれ
ぞれの感度の温度性外を示す図である。
!・・・・・・シリコン基板、2.3・・・・・・磁気
抵抗効果素子、4・・・・・定電流回路、5・・・・F
ET16・・・・・・抵抗。FIG. 1 is a perspective view showing the configuration of a magnetic sensor according to an embodiment of the present invention, FIG. 2 is a circuit diagram of FIG. 1, and FIG. 3 is a diagram of a magnetic sensor according to an embodiment of the present invention and a conventional magnetic sensor. FIG. 3 is a diagram showing the temperature dependence of the sensitivity. ! ... Silicon substrate, 2.3 ... Magnetoresistive element, 4 ... Constant current circuit, 5 ... F
ET16...Resistance.
Claims (1)
気抵抗効果素子を形成すると共に、前記シリコン基板上
に前記磁気抵抗効果素子に一定電流を供給する定電流回
路を形成することを特徴とする磁気センサ。A magnetic sensor characterized in that a magnetoresistive element made of a ferromagnetic alloy thin film is formed on a silicon substrate, and a constant current circuit that supplies a constant current to the magnetoresistive element is formed on the silicon substrate. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1324310A JPH03183976A (en) | 1989-12-14 | 1989-12-14 | Magnetic sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1324310A JPH03183976A (en) | 1989-12-14 | 1989-12-14 | Magnetic sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03183976A true JPH03183976A (en) | 1991-08-09 |
Family
ID=18164376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1324310A Pending JPH03183976A (en) | 1989-12-14 | 1989-12-14 | Magnetic sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03183976A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002107346A (en) * | 2000-10-03 | 2002-04-10 | Murata Mfg Co Ltd | Magnetic body detector |
JP2002189068A (en) * | 2000-10-11 | 2002-07-05 | Murata Mfg Co Ltd | Magnetic body detector |
EP2224587A1 (en) * | 2009-02-25 | 2010-09-01 | Hitachi, Ltd. | Induced voltage detector circuit, motor drive semiconductor device having the same, motor and air conditioner |
-
1989
- 1989-12-14 JP JP1324310A patent/JPH03183976A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002107346A (en) * | 2000-10-03 | 2002-04-10 | Murata Mfg Co Ltd | Magnetic body detector |
JP4678085B2 (en) * | 2000-10-03 | 2011-04-27 | 株式会社村田製作所 | Magnetic detector |
JP2002189068A (en) * | 2000-10-11 | 2002-07-05 | Murata Mfg Co Ltd | Magnetic body detector |
JP4517558B2 (en) * | 2000-10-11 | 2010-08-04 | 株式会社村田製作所 | Magnetic detector |
EP2224587A1 (en) * | 2009-02-25 | 2010-09-01 | Hitachi, Ltd. | Induced voltage detector circuit, motor drive semiconductor device having the same, motor and air conditioner |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4296377A (en) | Magnetic signal field sensor that is substantially immune to angular displacement relative to the signal field | |
US10585152B2 (en) | Temperature-compensated magneto-resistive sensor | |
JP2551321B2 (en) | Integrated magnetoresistive sensor | |
US6717403B2 (en) | Method and system for improving the efficiency of the set and offset straps on a magnetic sensor | |
JPH06235759A (en) | Magnetization switching type closed-loop magnetomer | |
JPH07501402A (en) | Temperature compensated magnetoresistive sensor circuit with high output voltage swing | |
JP2005529338A (en) | Sensor and method for measuring the flow of charged particles | |
JP3089828B2 (en) | Ferromagnetic magnetoresistive element | |
JPH03183976A (en) | Magnetic sensor | |
US5622874A (en) | Process for forming a magnetoresistive sensor for a read/write head | |
JP2576763B2 (en) | Ferromagnetic magnetoresistive element | |
JP3282444B2 (en) | Magnetoresistive element | |
US8198886B2 (en) | Magnetic detecting device and method for manufacturing the same | |
JPH069306Y2 (en) | Position detector | |
JPH0634711Y2 (en) | Magnetic sensor | |
JPH11329186A (en) | Proximity sensor | |
JPS62148813A (en) | Magnetic sensor | |
JPH03223685A (en) | Detecting sensor for external magnetic field | |
JPH0212621Y2 (en) | ||
US20050088175A1 (en) | Permalloy magnetization reversal sensor | |
JPS622362B2 (en) | ||
JPS6280572A (en) | Magnetic detector | |
JPH04282480A (en) | Magnetic sensor | |
JPH01259584A (en) | Magnetoresistive element | |
JPH07249808A (en) | Magnetoelectric conversion element |