JPH03183695A - Selectively forming method of diamond thin film by vapor phase synthesis - Google Patents
Selectively forming method of diamond thin film by vapor phase synthesisInfo
- Publication number
- JPH03183695A JPH03183695A JP32225989A JP32225989A JPH03183695A JP H03183695 A JPH03183695 A JP H03183695A JP 32225989 A JP32225989 A JP 32225989A JP 32225989 A JP32225989 A JP 32225989A JP H03183695 A JPH03183695 A JP H03183695A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- diamond
- diamond thin
- vapor phase
- phase synthesis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 116
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 115
- 239000010409 thin film Substances 0.000 title claims abstract description 70
- 239000012808 vapor phase Substances 0.000 title claims abstract description 46
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 36
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000012071 phase Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 19
- 238000000576 coating method Methods 0.000 abstract description 19
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JVJQPDTXIALXOG-UHFFFAOYSA-N nitryl fluoride Chemical compound [O-][N+](F)=O JVJQPDTXIALXOG-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、気相合成ダイヤモンド薄膜の選択形成方法
に係り、詳しくは、基板上に予め気相合成された下地ダ
イヤモンド薄膜表面上の希望部分に、気相合成によって
ダイヤモンド薄膜を新たに形成し得るようにした、気相
合成ダイヤモンド薄膜の選択形成方法に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for selectively forming a vapor-phase synthesized diamond thin film, and more particularly, a desired portion on the surface of a base diamond thin film that has been vapor-phase synthesized on a substrate in advance. The present invention relates to a method for selectively forming a diamond thin film by vapor phase synthesis, which enables a new diamond thin film to be formed by vapor phase synthesis.
周知のように、ダイヤモンドは物質中最高の硬さを持ち
、熱伝導率が大きく、さらに耐熱性、耐放射線性に優れ
ている。そのため、気相合成されたダイヤモンドを用い
て、これらの特性を備えた、耐環境性電子デバイス、半
導体素子等の開発が進められている。As is well known, diamond has the highest hardness of all materials, high thermal conductivity, and excellent heat resistance and radiation resistance. Therefore, development of environmentally resistant electronic devices, semiconductor elements, etc. with these characteristics using vapor-phase synthesized diamond is underway.
このような電子技術分野への気相合成ダイヤモンドの適
用に際しては、Ｓｉ基板（Ｓｉウェハ）表面上の希望部
分に選択的にダイヤモンド薄膜を形成できる技術の確立
が要請されていた。このため、本出廓人は以下のような
ダイヤモンドの気相合成方法を提案している（特開昭６
２−２９７２９８号）。In order to apply vapor-phase synthetic diamond to such electronic technology fields, there has been a need to establish a technology that can selectively form a diamond thin film on desired areas on the surface of a Si substrate (Si wafer). For this reason, the author proposed the following method for vapor phase synthesis of diamonds (Japanese Patent Application Laid-open No. 6
2-297298).
すなわち、Ｓｉ基板上にダイヤモンドを気相合成するに
当たり、この基板表面上のダイヤモンドが形成されるべ
き部分をマスク部材で被覆するとともに、このマスク部
材で被覆された部分以外の残余の部分を、アモルファス
Ｓｉ等のアモルファス性材料で被覆する。次いで、前記
マスク部材を除去して基板表面を露出し、気相合成を行
うことにより露出された基板表面部分にダイヤモンド薄
膜を形成するようにしたものである。That is, when performing vapor phase synthesis of diamond on a Si substrate, the portion on the surface of the substrate where diamond is to be formed is covered with a mask member, and the remaining portion other than the portion covered with this mask member is covered with an amorphous material. Cover with an amorphous material such as Si. Next, the mask member is removed to expose the substrate surface, and a diamond thin film is formed on the exposed substrate surface portion by performing vapor phase synthesis.
上記の従来技術によれば、Ｓｉ基板表面上に希望するパ
ターンに従ってダイヤモンド薄膜を形成できるので、ダ
イヤモンド半導体などのデバイスの試作研究が一層進め
易くなった。According to the above-mentioned conventional technology, it is possible to form a diamond thin film on the surface of a Si substrate according to a desired pattern, making it easier to proceed with research into prototyping devices such as diamond semiconductors.
しかしながら、下地基板がＳｉ基板であると、デバイス
としての電気的耐圧が下地基板としてのＳｉによって制
限されること、高温状態下で使用する際に膨張率の違い
からデバイスが損傷を受ける可能性があること、等の問
題がある。However, if the base substrate is a Si substrate, the electrical withstand voltage of the device is limited by the Si base substrate, and there is a possibility that the device will be damaged due to the difference in expansion coefficient when used under high temperature conditions. There are problems such as:
そのため、Ｓｉ基板上に予め気相合成された下地ダイヤ
モンド薄膜表面上に、気相合成によってダイヤモンド薄
膜を希望するパターンに従って新たに形成し得るように
した技術が確立されれば、この技術に基づいて半導体な
どのデバイスを形成したのち、Ｓｉ基板のみを溶かし去
れば、上記のような間郡を解決し得ることになる。Therefore, if a technology is established that allows a new diamond thin film to be formed according to a desired pattern by vapor phase synthesis on the surface of a base diamond thin film that has been vapor phase synthesized in advance on a Si substrate, it is possible to If only the Si substrate is melted away after forming a device such as a semiconductor, the above problems can be solved.
この発明は、このような事情に鑑みてなされたものであ
って、基板上に予め気相合成された下地ダイヤモンド薄
膜の表面に、気相合成によってダイヤモンド薄膜を希望
するパターンに従って新たに形成できる、気相合成ダイ
ヤモンド薄膜の選択形成方法の提供を目的とする。This invention has been made in view of the above circumstances, and it is possible to newly form a diamond thin film according to a desired pattern by vapor phase synthesis on the surface of a base diamond thin film that has been vapor phase synthesized on a substrate in advance. The purpose of the present invention is to provide a method for selectively forming a vapor phase synthesized diamond thin film.
上記の目的を達成するために、この発明による気相合成
ダイヤモンド薄膜の選択形成方法は、基板上に予め気相
合成された下地ダイヤモンド薄膜の表面に、気相合成に
よってダイヤモンド薄膜を領域選択的に新たに形成する
気相合成ダイヤモンド薄膜の選択形成方法であって、前
記下地ダイヤモンド薄膜表面上のダイヤモンドが形成さ
れるべき特定部分以外の残余の部分を、耐熱温度がダイ
ヤモンドを気相合成するための基板温度より高く、かつ
ダイヤモンドに対するエツチング選択比が大きい材料で
被覆し、その後気相合成を行うことにより前記下地ダイ
ヤモンド薄膜表面上の前記特定部分にダイヤモンド薄膜
を形成することを特徴としている。In order to achieve the above object, the method of selectively forming a diamond thin film by vapor phase synthesis according to the present invention is to form a diamond thin film by vapor phase synthesis in a region-selective manner on the surface of a base diamond thin film which has been vapor phase synthesized on a substrate in advance. A method for selectively forming a newly formed vapor phase synthesized diamond thin film, wherein the remaining portion of the surface of the base diamond thin film other than the specific portion where diamond is to be formed is heated to a temperature that is suitable for vapor phase synthesis of diamond. The method is characterized in that a diamond thin film is formed on the specific portion on the surface of the underlying diamond thin film by coating it with a material that is higher in temperature than the substrate and has a higher etching selectivity to diamond, and then performing vapor phase synthesis.
〔作 用］
上記のように構成されるこの発明による気相合成ダイヤ
モンド薄膜の選択形成方法においては、耐熱温度がダイ
ヤモンドを気相合成するための基板温度より高く、かつ
ダイヤモンドに対するエツチング選択比が大きい材料で
被覆されている部分、つまり新たにダイヤモンド薄膜を
形成させたくない部分では、ダイヤ粒子の核発生を起こ
す確率が極めて低いのでダイヤモンド薄膜の形成が強く
抑制される。このことにより、下地ダイヤモンド薄膜表
面上の希望する部分に、ダイヤモンド薄膜を新たに形成
し得る。また、たとえ上記材料を用いた被覆膜表面にダ
イヤモンドがわずかに形成されたとしても、密着性が極
めて弱く容易に除去し得るので、この発明の目的を達成
する上で何の不都合もない。[Function] In the method for selectively forming a vapor phase synthesized diamond thin film according to the present invention configured as described above, the heat resistance temperature is higher than the substrate temperature for vapor phase synthesis of diamond, and the etching selectivity to diamond is high. In areas covered with the material, that is, areas where it is not desired to form a new diamond thin film, the probability of nucleation of diamond particles occurring is extremely low, so the formation of a diamond thin film is strongly suppressed. This allows a new diamond thin film to be formed at a desired portion on the surface of the underlying diamond thin film. Further, even if a small amount of diamond is formed on the surface of the coating film using the above-mentioned material, the adhesion is extremely weak and it can be easily removed, so there is no problem in achieving the object of the present invention.
この発明における新たにダイヤモンド薄膜を形成させた
くない部分を被覆するための被覆材料は、上記のように
ダイヤ粒子の核発生を抑制できるとともに、ダイヤモン
ドに対するエツチング選択比が大きいという特性を備え
たものである。この「ダイヤモンドに対するエツチング
の選択比が大きい」とは、下地ダイヤモンド薄膜上に新
たにダイヤモンド薄膜を形成した後、この被覆材料が取
り除かれる際に、その材料を除去し得る薬品、ガス等に
よってダイヤモンドが？容けるなどのダイヤモンドに対
して悪影響を与えない、という意味である。In this invention, the coating material for coating the areas where it is not desired to form a new diamond thin film has the characteristics of suppressing the nucleation of diamond particles as described above and having a high etching selectivity with respect to diamond. be. This "high selection ratio of etching to diamond" means that after a new diamond thin film is formed on the underlying diamond thin film, when this coating material is removed, the diamond is etched by chemicals, gases, etc. that can remove the material. ? This means that it will not have any negative impact on the diamond, such as when it is stored.
さらに、上記被覆材料の耐熱温度としては、ダイヤモン
ドを気相合成するための基板温度より高いことが必要で
ある。これはダイヤモンドを気相合成するときの基板の
加熱によって新たに形成すべきダイヤモンド薄膜の形を
規制するための被覆膜が型くずれすることを防ぐためで
ある。なお、例えば、マイクロ波プラズマＣＶＤ法によ
るダイャモンドの気相合成では、基板温度を８００°Ｃ
程度に保持させてダイヤモンドの気相合成が行われてい
る。Furthermore, the heat-resistant temperature of the coating material needs to be higher than the substrate temperature for vapor phase synthesis of diamond. This is to prevent the coating film for controlling the shape of the newly formed diamond thin film from being deformed due to heating of the substrate during the vapor phase synthesis of diamond. For example, in the vapor phase synthesis of diamond using the microwave plasma CVD method, the substrate temperature is set at 800°C.
Vapor phase synthesis of diamond is carried out by maintaining the temperature at a certain level.
このような特性を備えた材料としては、アモルファスＳ
ｉ、また酸化ケイ素や窒化ケイ素などのアモルファス・
セラミックス、さらに微結晶Ｓｉなどが挙げられる。な
お、被覆の容易さの点からは、アモルファスＳ１が好ま
しい。Amorphous S is a material with such characteristics.
i, and amorphous materials such as silicon oxide and silicon nitride.
Examples include ceramics and microcrystalline Si. In addition, from the point of view of ease of coating, amorphous S1 is preferable.
また、この発明においては、新たに形成されるダイヤモ
ンド薄膜としては、下地ダイヤモンド薄膜に比較して、
ダレインサイズの大きなものが得られる。すなわち、下
地層としてのダイヤモンド薄膜においては、表面がダイ
ヤモンド・ペーストを用いてパフ研磨されたＳｉ基基土
上形成されるので、初期核発生の密度が高く、成長初期
の結晶粒は小さい。そして、成長させるに従って、結晶
同士の成長競争の結果、結晶の数が減少して結晶粒が大
きくなって行く。これに対して、新たに形成されるダイ
ヤモンド薄膜においては、下地ダイヤモンド薄膜の結晶
秩序に従って成長（エピタキシャル成長）するので、そ
の結晶粒は大きなものとなる。なお、下地ダイヤモンド
薄膜を気相合成するときには、制御性は悪いが生成速度
の速い成膜法を用いればよく、この上に積層されるダイ
ヤモンド薄膜を気相合成するときには、その膜厚がそれ
ほど必要とされないことが多いので、制御性良くゆっく
りと成長させてやればよい。In addition, in this invention, the newly formed diamond thin film has, compared to the underlying diamond thin film,
A large dalein size can be obtained. That is, since the diamond thin film as the underlayer is formed on a Si base whose surface has been puff-polished using diamond paste, the density of initial nucleation is high and the crystal grains at the initial stage of growth are small. As the crystals grow, the number of crystals decreases and the crystal grains become larger as a result of growth competition between the crystals. On the other hand, in a newly formed diamond thin film, the crystal grains thereof become large because they grow according to the crystal order of the underlying diamond thin film (epitaxial growth). When performing vapor phase synthesis of the underlying diamond thin film, it is sufficient to use a film formation method that has poor controllability but has a high production rate, and when performing vapor phase synthesis of the diamond thin film to be laminated on top of this, the film does not need to be as thick. Since this is often not the case, it is best to grow slowly and with good control.
以下、実施例に基づいてこの発明を説明する。 The present invention will be explained below based on examples.
策上尖施班
第１図はこの発明の一実施例の工程を示す概略説明図で
ある。予め、所定寸法のＳｉ基板１の表面をダイヤモン
ド・ペーストを用いてパフ研磨し、このＳｉ基板１上に
マイクロ波プラズマＣＶＤ装置を用いて下地層としての
下地ダイヤモンド薄ｎ＃２を厚み５μｍで形成した。以
下に、この実施例をその手順に従って説明する。FIG. 1 is a schematic explanatory diagram showing the steps of an embodiment of the present invention. In advance, the surface of a Si substrate 1 of a predetermined size is puff-polished using diamond paste, and a thin diamond n#2 base layer with a thickness of 5 μm is formed as a base layer on this Si substrate 1 using a microwave plasma CVD apparatus. did. This example will be explained below according to its procedure.
■ まず、公知のフォトリソグラフィ技術によって、下
地ダイヤモンド薄膜２上におけるダイヤモンドを新たに
形成すべき表面部分２ａに、厚み約１μｍとなるように
フォトレジスト膜３を被覆した〔第１図（ａ）〕。■ First, by a known photolithography technique, a photoresist film 3 with a thickness of about 1 μm was coated on the surface portion 2a of the underlying diamond thin film 2 where diamond was to be newly formed [FIG. 1(a)]. .
■ 次いで、下地ダイヤモンド薄膜２、フォトレジスト
膜３上の全面に、第１図（ｂ）に示すように、アモルフ
ァスＳｉを堆積させた。(2) Next, amorphous Si was deposited on the entire surface of the underlying diamond thin film 2 and the photoresist film 3, as shown in FIG. 1(b).
■ フォトレジスト膜３を除去する。このとき、フォト
レジスト膜３上に堆積していたアモルファスＳｉも同時
に除去される。これにより、下地ダイヤモンド薄膜２上
におけるダイヤモンドを新たに形成すべき表面部分２ａ
以外の表面部分２ｂのみに、アモルファスＳｉからなる
被覆膜４が形成される〔第１図（Ｃ）〕。■Remove the photoresist film 3. At this time, the amorphous Si deposited on the photoresist film 3 is also removed at the same time. As a result, a surface portion 2a on the base diamond thin film 2 where diamond is to be newly formed is formed.
A coating film 4 made of amorphous Si is formed only on the other surface portion 2b [FIG. 1(C)].
■ 次いで、マイクロ波プラズマＣＶＤ装置を用いて、
Ｓｉｉ板１を約８００ ’Ｃに保持して、７時間の気相
合成を行った。その結果、被覆膜４の型くずれを生しる
ことなく、下地ダイヤモンドＦ［２上のダイヤモンドを
形成すべき表面部分２ａの形状に従った厚み１． ５μ
ｍのダイヤモンド薄膜５が形成された〔第１図（ｄ）］
、あとは、第１図（ｅ）に示すように、フッ硝酸水溶液
を用いて被覆膜４を除去した。■ Next, using a microwave plasma CVD device,
The Sii plate 1 was maintained at about 800'C and gas phase synthesis was performed for 7 hours. As a result, the coating film 4 does not lose its shape and has a thickness of 1.5 mm according to the shape of the surface portion 2a on which the diamond is to be formed on the underlying diamond F[2. 5μ
A diamond thin film 5 of m thickness was formed [Fig. 1(d)]
Then, as shown in FIG. 1(e), the coating film 4 was removed using a fluoro-nitric acid aqueous solution.
第ｍ組例
第２同はこの発明の他の実施例の工程を示す概略説明図
である。第１実施例と同様にして、予め、Ｓｉ基板ｌｌ
上に下地ダイヤモンド薄膜１２を厚み５μｍで形成した
。以下に、この実施例をその手順に従って説明する。The second example of the mth group is a schematic explanatory diagram showing the steps of another embodiment of the present invention. In the same manner as in the first embodiment, the Si substrate ll is prepared in advance.
A base diamond thin film 12 was formed on top to a thickness of 5 μm. This example will be explained below according to its procedure.
■ まず、下地ダイヤモンド薄膜１２上全面にアモルフ
ァスＳｉからなる被覆膜１４を厚み数百オングストロー
ムで形成してから、この被覆膜１４上に、下地ダイヤモ
ンド薄膜１２上におけるダイヤモンドを新たに形成すべ
き表面部分１２ａ以外の表面部分１２ｂに対応させて、
フォトリソグラフィ技術によりフォトレジスト膜１３を
被覆した［第２図（ａ）］。■ First, a coating film 14 made of amorphous Si with a thickness of several hundred angstroms is formed on the entire surface of the base diamond thin film 12, and then a new diamond layer on the base diamond thin film 12 should be formed on this coating film 14. In correspondence with the surface portion 12b other than the surface portion 12a,
A photoresist film 13 was coated using a photolithography technique [FIG. 2(a)].
■ 次いで、フォトレジスト膜１３のない部分、つまり
、ダイヤモンドを新たに形成すべき表面部分１２ａの被
覆１１１１４を除去した〔第２図（ロ）〕。(2) Next, the coating 11114 on the surface portion 12a where the photoresist film 13 is not present, that is, the surface portion 12a where the diamond is to be newly formed, was removed [FIG. 2(B)].
■ フォトレジスト膜１３を除去する。これにより、下
地ダイヤモンド薄膜１２上におけるダイヤモンドを新た
に形成すべき表面部分１２ａ以外の表面部分１２ｂのみ
に、アモルファスＳｉからなる被覆膜１４が形成される
〔第２図（Ｃ）〕。(2) Remove the photoresist film 13. As a result, the coating film 14 made of amorphous Si is formed only on the surface portion 12b of the base diamond thin film 12 other than the surface portion 12a where diamond is to be newly formed [FIG. 2(C)].
■ 次に、第１実施例と同様にして、マイクロ波プラズ
マＣＶＤ装置を用いて気相合成を行った。(2) Next, vapor phase synthesis was performed using a microwave plasma CVD apparatus in the same manner as in the first example.
その結果、下地ダイヤモンド薄膜１２上のダイヤモンド
を形成すべき表面部分１２ａにその形状に従った厚み１
．５μｍのダイヤモンド薄膜１５が形成された（第２図
（ｄ）〕。あとは、第２図（ｅ）に示すように、フン硝
酸水溶液を用いて被覆膜１４を除去すればよい。As a result, the surface portion 12a on which diamond is to be formed on the base diamond thin film 12 has a thickness of 1 according to its shape.
．． A diamond thin film 15 of 5 μm was formed (FIG. 2(d)).Then, as shown in FIG. 2(e), the coating film 14 was removed using a nitric acid aqueous solution.
なお、アモルファス性材料としては、上記両実施例では
アモルファスＳｉを用いたが、酸化ケイ素や窒化ケイ素
などのアモルファス・セラミックス、あるいは微結晶Ｓ
ｉを使用してもよい。Although amorphous Si was used as the amorphous material in both of the above examples, amorphous ceramics such as silicon oxide and silicon nitride, or microcrystalline S
You may also use i.
（発明の効果）
以上説明したように、この発明による気相合成ダイヤモ
ンド薄膜の選択形成方法によれば、基板上に予め気相合
成された下地ダイヤモンド薄膜表面のダイヤモンドを形
成すべき特定部分以外の残余の部分を、耐熱温度がダイ
ヤモンドを気相合成するための基板塩度より高く、かつ
ダイヤモンドに対するエンチング選択比が大きい材料で
被覆し、その後、気相合成を行うようにしたので、下地
ダイヤモンド薄膜表面上の希望する部分に、その形状パ
ターンに従ってダイヤモンド薄膜を新たに形成すること
ができる。(Effects of the Invention) As explained above, according to the method for selectively forming a vapor phase synthesized diamond thin film according to the present invention, the surface of the base diamond thin film preliminarily formed on the substrate by vapor phase synthesis is removed from a specific portion other than the specific portion where diamond is to be formed. The remaining part was coated with a material that has a heat resistance temperature higher than the substrate salinity for diamond vapor phase synthesis and a high etching selectivity to diamond, and then vapor phase synthesis was performed, so that the underlying diamond thin film A new diamond thin film can be formed on a desired portion of the surface according to the shape pattern.
これにより、この発明による選択形成方法に基づいて半
導体デバイスを形成した後、下地ダイヤモンド薄膜ｔ膜
を成長させたＳｉ等からなる基板を除去すれば、そのデ
バイスはダイヤモンド自身の持つ優れた特性を備えたも
のとなる。したがって、電気的耐圧が飛躍的に向上し、
高温状態における膨張率の違いによる損傷の心配等のな
い優れた性能を備えたダイヤモンド半導体デバイスなど
の開発に寄与することができる。As a result, if a semiconductor device is formed based on the selective formation method of the present invention and the substrate made of Si or the like on which the underlying diamond thin film T film is grown is removed, the device will have the excellent characteristics of diamond itself. It becomes something. Therefore, electrical withstand voltage is dramatically improved,
The present invention can contribute to the development of diamond semiconductor devices with excellent performance that are free from damage caused by differences in expansion coefficients in high-temperature conditions.
第１図はこの発明の一実施例の工程を示す概略説明図、
第２図はこの発明の他の実施例の工程を示す概略説明口
である。
１．１１・・・−５ｉ基板、２．１２−下地ダイヤモン
ド薄膜、３．１３−フォトレジスト膜、
４．１４− アモルファスＳｉからなる被覆膜、５．１
５−ダイヤモンド薄膜。FIG. 1 is a schematic explanatory diagram showing the steps of an embodiment of the present invention;
FIG. 2 is a schematic explanatory diagram showing the steps of another embodiment of the present invention. 1.11...-5i substrate, 2.12- base diamond thin film, 3.13- photoresist film, 4.14- coating film made of amorphous Si, 5.1
5-Diamond film.
Claims (1)
膜の表面に、気相合成によってダイヤモンド薄膜を領域
選択的に新たに形成する気相合成ダイヤモンド薄膜の選
択形成方法であって、前記下地ダイヤモンド薄膜表面上
のダイヤモンドが形成されるべき特定部分以外の残余の
部分を、耐熱温度がダイヤモンドを気相合成するための
基板温度より高く、かつダイヤモンドに対するエッチン
グ選択比が大きい材料で被覆し、その後気相合成を行う
ことにより前記下地ダイヤモンド薄膜表面上の前記特定
部分にダイヤモンド薄膜を形成することを特徴とする、
気相合成ダイヤモンド薄膜の選択形成方法。(1) A selective formation method for a vapor-phase synthesized diamond thin film, in which a new diamond thin film is selectively formed by vapor phase synthesis on the surface of a base diamond thin film that has been vapor-phase synthesized in advance on a substrate, the method comprising: The remaining portion of the thin film surface other than the specific portion where diamond is to be formed is coated with a material that has a heat resistance higher than the substrate temperature for vapor phase synthesis of diamond and has a high etching selectivity for diamond, and then is coated with a material that has a high etching selectivity for diamond. forming a diamond thin film on the specific portion on the surface of the underlying diamond thin film by performing phase synthesis;
Selective formation method for vapor phase synthesized diamond thin film.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32225989A JP2690796B2 (en) | 1989-12-11 | 1989-12-11 | Selective formation method of vapor phase synthetic diamond thin film |
| GB9000473A GB2228745B (en) | 1989-01-10 | 1990-01-09 | Process for the selective deposition of thin diamond film by gas phase synthesis |
| US07/845,790 US5304461A (en) | 1989-01-10 | 1992-03-09 | Process for the selective deposition of thin diamond film by gas phase synthesis |
| GB9224173A GB2260341B (en) | 1989-01-10 | 1992-11-18 | Process for the selective deposition of thin diamond film by chemical vapour deposition |
| GB9224174A GB2260342B (en) | 1989-01-10 | 1992-11-18 | Process for the selective deposition of thin diamond film by chemical vapour deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32225989A JP2690796B2 (en) | 1989-12-11 | 1989-12-11 | Selective formation method of vapor phase synthetic diamond thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03183695A true JPH03183695A (en) | 1991-08-09 |
| JP2690796B2 JP2690796B2 (en) | 1997-12-17 |
Family
ID=18141658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32225989A Expired - Fee Related JP2690796B2 (en) | 1989-01-10 | 1989-12-11 | Selective formation method of vapor phase synthetic diamond thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2690796B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017526809A (en) * | 2014-08-01 | 2017-09-14 | ハリバートン エナジー サヴィシーズ インコーポレイテッド | Chemical vapor deposition modified polycrystalline diamond |
| JP2021089267A (en) * | 2020-06-03 | 2021-06-10 | 五郎 五十嵐 | Metal container for sealing radioactive material |
-
1989
- 1989-12-11 JP JP32225989A patent/JP2690796B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017526809A (en) * | 2014-08-01 | 2017-09-14 | ハリバートン エナジー サヴィシーズ インコーポレイテッド | Chemical vapor deposition modified polycrystalline diamond |
| JP2021089267A (en) * | 2020-06-03 | 2021-06-10 | 五郎 五十嵐 | Metal container for sealing radioactive material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2690796B2 (en) | 1997-12-17 |
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