JPH03175430A - Reflection type liquid crystal display device - Google Patents

Reflection type liquid crystal display device

Info

Publication number
JPH03175430A
JPH03175430A JP31665789A JP31665789A JPH03175430A JP H03175430 A JPH03175430 A JP H03175430A JP 31665789 A JP31665789 A JP 31665789A JP 31665789 A JP31665789 A JP 31665789A JP H03175430 A JPH03175430 A JP H03175430A
Authority
JP
Japan
Prior art keywords
picture element
element electrode
signal conductor
switching element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31665789A
Inventor
Fujio Okumura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP31665789A priority Critical patent/JPH03175430A/en
Publication of JPH03175430A publication Critical patent/JPH03175430A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To realize a large picture element area rate and low patterning accuracy by embedding a switching element and a signal conductor below a picture element electrode and providing a conductive shield layer among the picture element electrode, switching element, and signal conductor.
CONSTITUTION: The switching element 106 and signal conductor 102 are embed ded below the picture element electrode 107 partially or entirely and the conduc tive layer is provided among the picture element electrode 107, switching element 106, and signal conductor 102 to shield them electrically. A thin film transistor 106 and the conductor 102 are embedded below the picture element electrode 107 and then parasitic capacity is generated between conductors of the gate 101 and drain 102 and the picture element electrode 107, but the parasitic capac ity is all connected to the potential of the shield by providing the electric shield layer 108, so a noise signal is prevented from being inputted directly from the conductors of the gate 101 and drain 102. Consequently, a high-brightness and high-contrast screen is obtained with the large picture element area rate and the requirements for the size accuracy are suppressed low.
COPYRIGHT: (C)1991,JPO&Japio
JP31665789A 1989-12-05 1989-12-05 Reflection type liquid crystal display device Pending JPH03175430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31665789A JPH03175430A (en) 1989-12-05 1989-12-05 Reflection type liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31665789A JPH03175430A (en) 1989-12-05 1989-12-05 Reflection type liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH03175430A true JPH03175430A (en) 1991-07-30

Family

ID=18079458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31665789A Pending JPH03175430A (en) 1989-12-05 1989-12-05 Reflection type liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH03175430A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0553147A (en) * 1991-08-23 1993-03-05 Nec Corp Liquid crystal display device and production thereof
EP0556484A1 (en) * 1991-12-25 1993-08-25 Kabushiki Kaisha Toshiba Liquid crystal display device
US5666180A (en) * 1992-01-30 1997-09-09 Canon Kabushiki Kaisha Liquid crystal display with reduced parasitic capacitance between pixel elements and matrix wiring elements
US6246453B1 (en) 1996-06-25 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2002107743A (en) * 2000-09-25 2002-04-10 Koninkl Philips Electronics Nv Reflection type liquid crystal display device
JP2002198537A (en) * 2000-09-29 2002-07-12 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
JP2005316002A (en) * 2004-04-27 2005-11-10 Sony Corp Display device
EP1617282A3 (en) * 1995-09-27 2006-01-25 Sharp Corporation Active matrix substrate and display device incorporating the same
JP2008083731A (en) * 2000-01-26 2008-04-10 Semiconductor Energy Lab Co Ltd Semiconductor device
US7545449B2 (en) 2003-03-07 2009-06-09 Casio Computer Co., Ltd. Liquid crystal display device having auxiliary capacitive electrode
JP2010217926A (en) * 2000-01-26 2010-09-30 Semiconductor Energy Lab Co Ltd The liquid crystal display device
JP2011242784A (en) * 2000-02-22 2011-12-01 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus
JP2012073657A (en) * 2000-08-14 2012-04-12 Semiconductor Energy Lab Co Ltd Display device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0553147A (en) * 1991-08-23 1993-03-05 Nec Corp Liquid crystal display device and production thereof
EP0556484A1 (en) * 1991-12-25 1993-08-25 Kabushiki Kaisha Toshiba Liquid crystal display device
US6124904A (en) * 1991-12-25 2000-09-26 Kabushiki Kaisha Toshiba Liquid crystal display device
US5666180A (en) * 1992-01-30 1997-09-09 Canon Kabushiki Kaisha Liquid crystal display with reduced parasitic capacitance between pixel elements and matrix wiring elements
EP1617282A3 (en) * 1995-09-27 2006-01-25 Sharp Corporation Active matrix substrate and display device incorporating the same
US6246453B1 (en) 1996-06-25 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6914260B2 (en) 1996-06-25 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7206053B2 (en) 1996-06-25 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US8017456B2 (en) 2000-01-26 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008083731A (en) * 2000-01-26 2008-04-10 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2010217926A (en) * 2000-01-26 2010-09-30 Semiconductor Energy Lab Co Ltd The liquid crystal display device
JP2013152468A (en) * 2000-01-26 2013-08-08 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2011242784A (en) * 2000-02-22 2011-12-01 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic apparatus
US9318610B2 (en) 2000-02-22 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9869907B2 (en) 2000-02-22 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2012073657A (en) * 2000-08-14 2012-04-12 Semiconductor Energy Lab Co Ltd Display device
JP2002107743A (en) * 2000-09-25 2002-04-10 Koninkl Philips Electronics Nv Reflection type liquid crystal display device
JP2002198537A (en) * 2000-09-29 2002-07-12 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
US7545449B2 (en) 2003-03-07 2009-06-09 Casio Computer Co., Ltd. Liquid crystal display device having auxiliary capacitive electrode
JP2005316002A (en) * 2004-04-27 2005-11-10 Sony Corp Display device

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