JPH03171640A - Device for jointing semiconductor chip - Google Patents

Device for jointing semiconductor chip

Info

Publication number
JPH03171640A
JPH03171640A JP31207689A JP31207689A JPH03171640A JP H03171640 A JPH03171640 A JP H03171640A JP 31207689 A JP31207689 A JP 31207689A JP 31207689 A JP31207689 A JP 31207689A JP H03171640 A JPH03171640 A JP H03171640A
Authority
JP
Japan
Prior art keywords
collet
stem
chip
heater
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31207689A
Other languages
Japanese (ja)
Inventor
Fumitoshi Yoshimura
文敏 吉村
Mamoru Okanishi
岡西 守
Yoshiaki Tadatsu
多田津 芳昭
Takanobu Matsuo
孝信 松尾
Kazuo Ketsukawa
結川 一男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP31207689A priority Critical patent/JPH03171640A/en
Publication of JPH03171640A publication Critical patent/JPH03171640A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate a heat dissipation due to a collet for pressing use and to shorten the time to be required for a die bonding by a method wherein a subheat source for heating the collect is provided, this subheat source is made to operate in synchronization with the temperature cycle of a main heat source for heating a stem and a semiconductor chip is heated by the collet at the time of jointing of the chip. CONSTITUTION:An electric heater 8 for collet heating use, which is a subheat source, is made to operate in synchronization with the temperature cycle of a heater, which is a main heat source, of a support block 1 and when a chip 3 is pressed at a point C, a collet 6 is heated to 350 deg.C and its vicinity, for example, by the heater 8. For this, the chip 3 results in being heated from its upper part as well by the collet 6, the temperature of the heater of the block 1 suffices at 230 deg.C or thereabouts, which is considerably lower than the conventional one of the heater, and the time to be required for rising the temperature is shortened. Moreover, as the chip 3 is heated by the collet 6, a brazing metal promptly comes to have comparatibility with the joint surfaces of the chip 3 and the stem 2 and the necessary time between a point B, where a heating is stopped, and a point D, where a cooling is started, is significantly shortened.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 この発明は、半導体チップをグイポンデイングしてステ
ムに接合するための接合装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an improvement in a bonding device for bonding a semiconductor chip to a stem.

〈従米の技術〉 &IA:tルエ−.+l◆九フ早I一慎Arh嬬票消土
道核装置を製造する際には、ステム上に半導体チップを
載置して加熱し、両者の間に介在するろう材によって半
導体チップをステムに接合するいわゆるグイポンディン
グが行なわれる。
〈Technology of Jubai〉 &IA:t Rue. +l◆When manufacturing a nuclear device, a semiconductor chip is placed on the stem and heated, and the semiconductor chip is attached to the stem using a brazing material interposed between the two. A so-called guibonding process is performed to join the parts.

この接合は、第4図に示すように′Ftiヒーターを内
蔵した支持ブロック1によりステム2を支持してステム
2の上に半導体チップ3を載せ、移送用のコレット4で
押さえてステム2上に半導体チップ3を固定した状態で
行なわれる。第5図はこの時の温度サイクルを例示した
ものであり、縦軸は支持ブロック1のヒーターの温度で
ある。即ち、A点でステム2を支持ブロック1にセット
し、移送用コレット4でシート上からチップ3を移送し
てステム2上の所定の位置に載置した後移送用コレット
4を上昇させ、B点で加熱を開始する。そして加熱の途
中で移送用フレット4が下降してチップ3を押圧し、ろ
う材がチップ3とステム2になじんだD点で加熱を停止
し、第4図に示す冷却ノズル5から例えば窒素グス等の
冷却ガスをチップト4を上昇させると共にステム2を取
り外して接合を終わるようになっている. 〈発明が解決しようとする課題〉 第4図(.)の矢印は熱の移動を示しており、上述のよ
うな従米の方法ではコレット4による放熱が生ずる.こ
のため、チップ3を所定の温度まで上昇させるためにス
テム2をそれ以上の温度になるように加熱する必要があ
り、所要時間が長くなるほか、ステムの酸化や支待ブロ
ック1のヒーターの寿命が短くなる等の問題があった.
この発明はこれらの点に着目し、押圧用のコレットによ
る放熱をなくして、グイボンディングに要する時間を短
縮すると共に上記の賭問題を解決することを目的として
なされたものである。
This bonding is carried out as shown in FIG. 4 by supporting the stem 2 with a support block 1 having a built-in Fti heater, placing the semiconductor chip 3 on top of the stem 2, pressing it with a collet 4 for transfer, and placing it on the stem 2. This is performed with the semiconductor chip 3 fixed. FIG. 5 illustrates the temperature cycle at this time, and the vertical axis represents the temperature of the heater of the support block 1. That is, the stem 2 is set on the support block 1 at point A, the chip 3 is transferred from the sheet by the transfer collet 4 and placed at a predetermined position on the stem 2, and then the transfer collet 4 is raised. Start heating at the point. Then, during heating, the transfer fret 4 descends and presses the chip 3, and the heating is stopped at point D when the brazing material has become familiar with the chip 3 and stem 2. For example, nitrogen gas is supplied from the cooling nozzle 5 shown in FIG. At the same time, the tip 4 is raised using a cooling gas such as the like, and the stem 2 is removed to complete the joining. <Problems to be Solved by the Invention> The arrows in Fig. 4 (.) indicate the movement of heat, and in the above-mentioned method of Jubei, heat radiation occurs by the collet 4. Therefore, in order to raise the chip 3 to a predetermined temperature, it is necessary to heat the stem 2 to a higher temperature, which not only increases the time required but also reduces the oxidation of the stem and the lifespan of the heater in the support block 1. There were problems such as the length becoming shorter.
The present invention has focused on these points, and has been made for the purpose of eliminating the heat dissipation by the pressing collet, shortening the time required for bonding, and solving the above-mentioned gambling problem.

<a題を解決するための手段〉 上述の目的を達威するために、この発明では、抑圧用の
コレットと、それを加熱する副熱源を設け、この副熱源
をステムを加熱する主熱源の温度サイクルに同期して作
動させ、接合時にコレットにより半導体チップを加熱す
るようにしている。
<Means for Solving Problem a> In order to achieve the above-mentioned object, this invention provides a collet for suppression and a sub-heat source for heating it, and uses this sub-heat source as a main heat source for heating the stem. It operates in synchronization with the temperature cycle, and the collet heats the semiconductor chip during bonding.

く作用〉 コレット側からも半導体チップが加熱されるので、ステ
ムの温度を従米ほと高くしなくても半導体チップの温度
は所定の値まで上昇し、短い時間でグイボンディングが
終了する。
Effect> Since the semiconductor chip is heated from the collet side as well, the temperature of the semiconductor chip rises to a predetermined value without increasing the temperature of the stem, and the bonding is completed in a short time.

く実施例〉 次に、図示の一実施例について説明する,mi図は装置
の要部の概略図、第2図は接合部を示す図、@3図は温
度サイクルを示す図である。
Embodiment> Next, an illustrated embodiment will be described. FIG. 1 is a schematic diagram of the main parts of the device, FIG. 2 is a diagram showing a joint part, and diagram @ 3 is a diagram showing a temperature cycle.

図において、1,2.3及び5は従米例と同じく支持ブ
ロノク、ステム、半導体チップ及び冷却ノズルであり、
支持ブロック1には図示しない電スヒーターが埋め込ま
れている。6はこの発明による押圧用のコレットである
。このコレット6はコレットヘッド7に取り付けられて
適宜移動できるようになっており、加熱用の電六ヒータ
ー8によって加熱されるようになっている。尚、9は熱
が上側に逃げるのを防ぐ断熱材、10は熱がこもるのを
防ぐ放熱板である。
In the figure, 1, 2, 3 and 5 are the support block, stem, semiconductor chip and cooling nozzle as in the conventional example,
An electric heater (not shown) is embedded in the support block 1. 6 is a collet for pressing according to the present invention. This collet 6 is attached to a collet head 7 so that it can be moved as appropriate, and is heated by an electric six heater 8 for heating. Note that 9 is a heat insulating material that prevents heat from escaping to the upper side, and 10 is a heat sink that prevents heat from being trapped.

グイボンディングの工程は基本的には第4図に関して述
べた従米例と同様に、支持ブロック1によりステム2を
支持し、ステム2の上に載せた半導体チップ3をフレッ
ト6で押さえた状態で行なわれるのであるが、PISa
図におけるB点の加熱開始以降が次のように異なってい
る。
The Gui bonding process is basically carried out with the stem 2 supported by the support block 1 and the semiconductor chip 3 placed on the stem 2 being held down by the fret 6 in the same manner as in the example described in connection with FIG. However, PISa
The difference after the start of heating at point B in the figure is as follows.

即ち、副熱源であるコレット加熱用の電気ヒーター8は
主熱源である支持ブロック1のヒーターの温度サイクル
に同期しで作動するようにしてあり、C点でチップ3を
押圧する時にはコレット6はヒーター8により例えば3
50[ ”C ]付近まで加熱されている。このため、
チップ3はコレット6によって上からも加熱されること
になって、第5図では最高が300[’CI以上となっ
ていた支持ブロック1のヒーター温度は、この実施例の
場合には従米上りもかなり低い230[”C]前後で十
分となり、昇温に要する時間が短縮される.しかもチッ
プ3がフレット6で加熱されるのでろう材(図示せず)
はチップ3とステム2の接合面に速やかになじみ、B点
から加熱を停止して冷却を開始するD点まで3をステム
2に載置するA点から、冷却〃スをチップ3やコレット
6、ステム2及び支持ブロック1の上端周辺に吹き付け
て冷却して接合を終わるE点までの全時間も従来の約5
0[%1に短縮されるのである。尚、PjS2図(a)
における矢印は加熱時の熱の移動を示している。
That is, the electric heater 8 for heating the collet, which is an auxiliary heat source, is operated in synchronization with the temperature cycle of the heater of the support block 1, which is the main heat source, and when pressing the chip 3 at point C, the collet 6 is activated by the heater. 8 for example 3
It is heated to around 50[''C].For this reason,
The chip 3 is also heated from above by the collet 6, and the heater temperature of the support block 1, which in FIG. A fairly low temperature of around 230 [''C] is sufficient, and the time required to raise the temperature is shortened.Furthermore, since the chip 3 is heated at the fret 6, the brazing material (not shown) is used.
quickly adapts to the joining surface of the tip 3 and the stem 2, and the cooling point is transferred from point A, where the tip 3 is placed on the stem 2, to point D, where heating stops and cooling begins, and then the cooling point is transferred to the tip 3 and the collet 6. , the total time until point E where the stem 2 and the upper end of the support block 1 are cooled and the joining is completed is about 5 minutes longer than the conventional method.
It is shortened to 0[%1. In addition, PjS2 diagram (a)
The arrows in the figure indicate the transfer of heat during heating.

く発明の効果〉 上述の実施例から明らかなように、この発明は半導体チ
ップを押圧するコレット側に副熱源を設け、接合時にコ
レットにより半導体チップを加熱するようにしたもので
ある。
Effects of the Invention> As is clear from the embodiments described above, in the present invention, an auxiliary heat source is provided on the side of the collet that presses the semiconductor chip, and the semiconductor chip is heated by the collet during bonding.

従って、支持ブロック側からのみステムを加熱していた
従米のようにステムを必要以上に加熱する必要がなく、
昇温に要する時間やろう材をなじませるのに要する時間
を短縮してグイボンディング工程の所要時間を大幅に短
縮することが可能となり、更にステムの酸化や支持ブロ
ックのヒーター77命が短くなる等のl8I題も解決さ
れるのである。
Therefore, there is no need to heat the stem more than necessary, unlike conventional systems that heated the stem only from the support block side.
By shortening the time required to raise the temperature and the time required to blend the brazing filler metal, it is possible to significantly shorten the time required for the Gui bonding process, and it also reduces the oxidation of the stem and the life of the support block heater 77. The l8I problem is also solved.

【図面の簡単な説明】[Brief explanation of the drawing]

の−実施例の要部の4aI面図及び正面図、第2図(a
)及び第2図(b)は、それぞれ接合部の側面図及び正
面図、 第3図は、温度サイクルを示す図、 第4図(a)及び第4図(b)は、それぞれ従米例の接
合部の側面図及び正面図、 tjS5図は、その温度サイクルを示す図である.1・
・・支持ブロック   、2・・・ステム3・・・半導
体チッソ 5・・・冷却/ズル 6・・・押圧用のコレット 8・・・電スヒーター
- 4aI side view and front view of the main parts of the embodiment, Figure 2 (a
) and FIG. 2(b) are a side view and front view of the joint, respectively, FIG. 3 is a diagram showing the temperature cycle, and FIG. 4(a) and FIG. The side view and front view of the joint, and Figure tjS5 are diagrams showing the temperature cycle. 1・
...Support block, 2...Stem 3...Semiconductor Chisso 5...Cooling/Zuru 6...Collet for pressing 8...Electric heater

Claims (1)

【特許請求の範囲】[Claims] 1、支持ブロックによりステムを支持し、ステム上に半
導体チップを載置して押圧用のコレットで押圧しながら
ステムに半導体チップを接合するように構成された半導
体チップの接合装置において、上記コレットを加熱する
副熱源を設け、この副熱源をステムを加熱する主熱源の
温度サイクルに同期して作動させ、接合時にコレットに
より半導体チップを加熱することを特徴とする半導体チ
ップの接合装置。
1. In a semiconductor chip bonding apparatus configured to support a stem with a support block, place a semiconductor chip on the stem, and bond the semiconductor chip to the stem while pressing with a pressing collet, the collet is A semiconductor chip bonding apparatus characterized in that a sub-heat source for heating is provided, the sub-heat source is operated in synchronization with the temperature cycle of a main heat source for heating a stem, and the semiconductor chip is heated by a collet during bonding.
JP31207689A 1989-11-29 1989-11-29 Device for jointing semiconductor chip Pending JPH03171640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31207689A JPH03171640A (en) 1989-11-29 1989-11-29 Device for jointing semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31207689A JPH03171640A (en) 1989-11-29 1989-11-29 Device for jointing semiconductor chip

Publications (1)

Publication Number Publication Date
JPH03171640A true JPH03171640A (en) 1991-07-25

Family

ID=18024947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31207689A Pending JPH03171640A (en) 1989-11-29 1989-11-29 Device for jointing semiconductor chip

Country Status (1)

Country Link
JP (1) JPH03171640A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091960A (en) * 2007-12-28 2008-04-17 Matsushita Electric Ind Co Ltd Method for packaging semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091960A (en) * 2007-12-28 2008-04-17 Matsushita Electric Ind Co Ltd Method for packaging semiconductor laser

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