JPS592333A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPS592333A JPS592333A JP57111225A JP11122582A JPS592333A JP S592333 A JPS592333 A JP S592333A JP 57111225 A JP57111225 A JP 57111225A JP 11122582 A JP11122582 A JP 11122582A JP S592333 A JPS592333 A JP S592333A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- laser
- wire
- point
- semiconductor pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ワイヤ？ンｆ１ング妓置に関する。[Detailed description of the invention] [Technical field of invention] Is this invention a wire? Concerning f1-ng girl placement.
従来、被ポンディング体である半導体ペレットの電極部
とリード間等に、第１図に示す如き、ワイヤデンディン
グ装置土工を用いてポンディング線２の架設が行われて
いる。このポンディング装置ｔ±１は、がンディング部
に設けられたヒータブロックＩＪ上に、半導体ペレット
３を装着したリードフレーム４を載置し、がンディング
部の上方に設けられたキャピラリーツール５からがンデ
ィング線２を導出して１ｈＬ極部とリード間等に架設す
るようになっている。而して、ヒータブロックＪ１の加
熱領域は、ヒータブロック１ノ上を移行するリードフレ
ーム４か所定位置に達したときに、ポンディングされる
千尋体ペレット３が十分に加熱されているように、その
彼方の半導体ペレット３′の下方に及ぶ予熱領域を有し
ている。このようにポンディングを施す半導体ペレット
３の全体が、ポンディング線６の熱圧着温度まで昇温し
たところでｄｉ？ンディング処理を行うため、第２図に
示す如く、半導体ペレット３が半田層や金シリコン層７
尋を介して熱融着によシリードフレーム４に固着されて
いると、ポンディング処理の際に半導体ペレ、ト３の位
置がリードフレーム４からずれる。BACKGROUND ART Conventionally, a bonding wire 2 has been constructed between an electrode portion and a lead of a semiconductor pellet, which is a body to be bonded, using a wire-dending equipment earthwork as shown in FIG. This bonding device t±1 places a lead frame 4 on which a semiconductor pellet 3 is mounted on a heater block IJ provided in a bonding section, and a capillary tool 5 provided above the bonding section. The terminal wire 2 is led out and installed between the 1hL pole part and the lead. Thus, the heating region of the heater block J1 is heated so that the Chihiro body pellets 3 to be pounded are sufficiently heated when the lead frame 4 moving above the heater block 1 reaches a predetermined position. It has a preheating area that extends below the semiconductor pellet 3' on the other side. When the entire semiconductor pellet 3 to be bonded in this manner is heated to the thermocompression bonding temperature of the bonding wire 6, di? In order to perform the bonding process, the semiconductor pellet 3 is coated with a solder layer or a gold-silicon layer 7, as shown in FIG.
If the semiconductor pellets 3 are fixed to the lead frame 4 by heat fusion through the grooves, the position of the semiconductor pellets 3 will shift from the lead frame 4 during the bonding process.
その結果、所定位置に正しくがンディングＩｉ！ｉ１６
を架設できないと共に、熱によって牛導体ペレット３の
特性を劣化させる問題があった。As a result, the Ii! i16
There was a problem in that the conductor pellets 3 could not be constructed and the characteristics of the conductor pellets 3 deteriorated due to heat.
また、メンディング処理は、第３図ｆＡ）に示す如＜
ＭＫ １ ｙｌｒｌアンング地点にポンディングｌ１Ｉ
６の一端部を同着した後、キャピラリーツール５を７９
１定高さ壕で引き上げてｄζンディング線６を所定量導
出した状態で、キャピラリーツール５を同図（Ｂ’）に
示す如く、リード８等の第２はンディング地点まで移送
することにより行っている。In addition, the mending process is performed as shown in Fig. 3 fA).
MK 1 ylrl pounding l1I at the ungu point
After attaching one end of 6, attach the capillary tool 5 to 79
1. With the capillary tool 5 pulled up to a certain height trench to derive a predetermined amount of the dζ landing wire 6, the capillary tool 5 is moved to the landing point as shown in FIG. 8 (B'). There is.
然るに、半導体ペレット３やリードフレーム４の熱容量
がポンディングｌｌ１１６の熱容量よシも極端に大きい
。このため、キャピラリーツール５を引き上げた直下の
？／ディング線６のほぼ全域が高温状態になる。その結
果、導出されたポンディング線６が、同図（Ｃ’）に示
す如く熱変形し、着しい場合には、第２がンディング地
点以外のところにンドンディング＆！６が接触し、短絡
不良等を引き起こす間亀がおった。However, the heat capacity of the semiconductor pellet 3 and the lead frame 4 is extremely larger than that of the bonding device 116. For this reason, the ? Almost the entire area of the /ding line 6 is in a high temperature state. As a result, the derived bonding wire 6 is thermally deformed as shown in FIG. 6 came into contact, causing a short circuit and other problems.
〔発明の目的〕
本発明は、ポンｆ（ング領域だけを局所的に加熱して、
ボンディング線の熱変形による短絡不良の発生を防止す
ると共に、被がンディング体の特性を向上させることが
できるワイヤポンディング装置を提供することをその目
的とするものである。[Object of the Invention] The present invention provides for heating only the pumping region locally,
It is an object of the present invention to provide a wire bonding device that can prevent the occurrence of short circuit defects due to thermal deformation of a bonding wire and improve the characteristics of a bonded body.
本発明は、レーザ照射によシポンディング領域だけを局
所的に加熱するようにして、ボンディング線の熱変形に
よる短絡不良の発生を防止すると共に、被がンディング
体の特性の向上を達成したワイヤデンディング装置であ
る。The present invention provides a wire bonding device that locally heats only the bonding area by laser irradiation, thereby preventing the occurrence of short circuits due to thermal deformation of the bonding wire, and improving the characteristics of the bonded body. It is a device.
以下、本発明の実施例について図面を参照して説明する
。第４図は、本発明の一実施例の概略構成を示す説明図
である。図中２０は、被ポンディング体でおる半導体ペ
レット２１を装着したリードフレーム２２が供給される
ビンディング部でおる。ビンディング部２０の上方には
、キャピラリーツール２３及びレーデ照射ｓ２４を有す
るポンディングヘッド２５が昇降自在に設けられている
。レーデ照射部２４は、グラスファイバー等からなるレ
ーデ供給管２６を介してレーデ発生器２７に接続式れて
いる。レーデ照射部２４の照射口２８は、第５図に示す
如く、キャピラリーツール２３から導出されたポンディ
ング＃２９が供給されるＶンディング地点３０に対向し
て設置されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 4 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. In the figure, reference numeral 20 denotes a binding portion to which a lead frame 22 to which a semiconductor pellet 21, which is a body to be bonded, is attached is supplied. Above the binding part 20, a pounding head 25 having a capillary tool 23 and a radar irradiation s24 is provided so as to be movable up and down. The radar irradiation unit 24 is connected to a radar generator 27 via a radar supply pipe 26 made of glass fiber or the like. As shown in FIG. 5, the irradiation port 28 of the radar irradiation unit 24 is installed opposite to the V-landing point 30 to which the bonding #29 derived from the capillary tool 23 is supplied.
而して、このように構成されたワイヤがンディング装ｆ
■によれば、リードフレーム２２がポンディング部２０
０所定位置に供給されると、第空図に示す如く、レーデ
照射ロＪＩＩ３＃第１材ンディング地点３０である例え
ばｌンディングパッドに対向するようにポンディングヘ
ッド２５を降下する。次いで、キャピラリーツール２３
を第１ボンデイング地点３０の上方の所定位置のところ
まで降下すると共に、レーデ発生器２１からレーデ供給
１ｆ２６を介してレーデ照射部２４にレーデを供給し、
照射口２８から第１？ンｆ（ング地点３０にレーデを照
射して加熱処理を施す。然る後、第６図に示す如く、所
定位置に設定されたキャピラリーツール２３５−
から♂ンディング線２９を導出し、レーデ照射によって
加熱された第１デンデイング地点３゜に熱圧着せしめる
。次いで、目ζンｆ（ングヘッド２５を上昇して次の第
２がンディング地点３１までの距離にはは等しい長延の
？ンディング線２９が導出する。ようにキャピラリーツ
ール２３の位置を設定する。次いで、キャピラリーツー
ル２３を第２ポンデイング地点３１である例えばリード
の上方に移行し、前述と同様にレーデ、照射により第２
ポンデイング地点３１を加熱しながら、キャピラリーツ
ール２３を降下してレーデ照射終了後ポンディング線２
９の熱圧着を行い、Ｉンディング＃１１２９を第１がン
ディング地点３０と第２ボンデ１ング地点３１に架設せ
しめる。Thus, the wire configured in this way is used as a winding device f.
According to (2), the lead frame 22 is connected to the bonding portion 20.
When the material is supplied to a predetermined position, the pounding head 25 is lowered so as to face a landing pad, for example, a landing point 30 for the radar irradiation roller JII3#, as shown in the diagram. Next, capillary tool 23
is lowered to a predetermined position above the first bonding point 30, and supplies the radar from the radar generator 21 to the radar irradiation unit 24 via the radar supply 1f26,
1st from irradiation port 28? Then, as shown in FIG. 6, the female ending wire 29 is drawn out from the capillary tool 235- set at a predetermined position, and the bonding point 30 is heated by laser irradiation. Thermocompression bonding is carried out at the heated first bending point 3°.Next, a bending line 29 of equal length is drawn out at a distance of 3° from the first bending head 25 to the next second bending point 31. Set the position of the capillary tool 23 so that
While heating the bonding point 31, the capillary tool 23 is lowered and the bonding line 2 is removed after radar irradiation is completed.
The thermocompression bonding of step 9 is carried out, and the bonding #1129 is installed between the first bonding point 30 and the second bonding point 31.
このようにこのワ３イヤがンディング装置４゜によれば
、レーザ照射によってｄｅンディング地点３０．３１の
みを直接加熱し、所定温度に達したところでメンディン
グ線２９を圧着するので、半導体ペレット２１全体は加
熱されず、が６−
ンデインク処理の際に半導体ペレット２１が位置ずれす
るのを阻止できると共に、加熱による半導体ペレット２
１の％性劣化を防止できる。According to the wire-ending device 4°, only the denting points 30 and 31 are directly heated by laser irradiation, and the mending wire 29 is crimped when a predetermined temperature is reached, so that the entire semiconductor pellet 21 is heated. The semiconductor pellet 21 is not heated, but the semiconductor pellet 21 can be prevented from being displaced during the ink treatment, and the semiconductor pellet 2 is not heated.
1% deterioration can be prevented.
千尋体ペレット２１の位置ずれが起きないので、がンデ
ィング線２９を所定位置に正確に取付けることができる
。また、加熱はポンディング地点ｇｏ、ｓｌのみに施さ
れ、しかも、がンディング１ｆｉ１２９の熱伝導率は通
常ポンｆ”４ンダ地点３０．３１ｆ形成するボンディン
グノヤッド勢の熱伝導率より遥かに小さいので、ボンデ
ィング地点３０．８Ｊに加えられｆｃ熱は、半導体ペレ
ット２１ではなくがンディングｌ＠；ｔｏを伝って外部
に放散される。その結果、Ｉンディンダ線２９の先端部
とｄｒンディング地点ｇｏ、ｓノとを所定時間十分に加
熱し、がンディングｍ４９をポンｆ（ング地点ＪＯ，，
！１７に強固に固着することができる。更に、ポンディ
ング処理の際に加えられた熱量は、がンディング地点３
ｏ、３１に加えられたものだけで極めて少ない。このた
め、第２ポンデイング地点３）にキャピラリーツール２
３を移行する際に導出されたポンディング線２９０部分
が、熱変形してボンディング地点３０．３１以外の部分
（Ｃ接触するのを防止できる。短絡不良等Ｑ発生を阻止
できる。Since the positional shift of the one-sided pellet 21 does not occur, the binding wire 29 can be accurately attached to a predetermined position. In addition, heating is applied only to the bonding points go and sl, and the thermal conductivity of the bonding 1fi129 is much smaller than that of the bonding noyad group that normally forms the bonding point 30.31f. Therefore, the fc heat applied to the bonding point 30.8J is dissipated to the outside through the bonding l@;to rather than the semiconductor pellet 21.As a result, the fc heat applied to the bonding point 30.8J is dissipated to the outside through the bonding point go, Sufficiently heat the sno for a predetermined period of time, and then press the ganding m49 at the pon f(ng point JO,,
! 17 can be firmly fixed. Furthermore, the amount of heat added during the bonding process is
The only thing added to o.31 is extremely small. For this reason, the capillary tool 2 is placed at the second ponding point 3).
It is possible to prevent the bonding wire 290 portion drawn out when transferring the bonding point 30 from being thermally deformed and contacting a portion other than the bonding point 30 and 31 (C).It is possible to prevent the occurrence of Q such as a short circuit failure.
以上説明した如く、本発明に係るワイヤポンディング装
置によれば、４オンデイング領域だけを局所的に加熱す
ることにより、ポンディング線の熱変形による短絡不良
の発生を防止すると共に、被ポンディング体の特性を向
上式せることができる等顕著な効果を秦するものである
。As explained above, according to the wire bonding device according to the present invention, by locally heating only the 4-on-ding region, it is possible to prevent the occurrence of short circuits due to thermal deformation of the bonding wire, and to It has remarkable effects, such as being able to improve the characteristics of.
第１図は、従来のワイヤがンディンダ装置の概略構成を
示す説明図、第２図は、同ワイヤポンディング装置にて
ポンディング処理を行っている状態を示す説明図、第３
図（Ａ）乃至同図（Ｃ）は、同装置のキャピラリーツー
ルの動きを示す説明図、第４図は、本発明の一実施例の
概略構成を示す説明図、第５図は、第１がンディング地
点をレーデ照射にて加熱している状態を示す説明図、第
６図は、第１はンディング地点にポンディング線を圧着
した状態を示す説明図、第７図は、第２ポンデイング地
点にキャピラリーツールを移行している状態を示す説明
図である。
２０・・・がンディング部、２ノ・・・半導体ペレ。
ト、２２・・・リードフレーム、２３・・・キャピラリ
ーツー＃、Ｊ ４・・・１ｚ−ｆ照射部、２５・・・ポ
ンディングヘッド、２６・・・レーデ供給管、ｉｉ ｙ
用ｖ−デ発生器、２８川照射口、２９・・・ポンディ
ング線、３０．３３・・・ボンディング地点、４０・・
・ワイヤポンディング装置。
出願人代理人 弁理士 鈴 江 武 彦９−
第１１
ｎ
第３図
（Ａ）（Ｂ）（ｃ）FIG. 1 is an explanatory diagram showing the general configuration of a conventional wire bonding device, FIG. 2 is an explanatory diagram showing a state in which the same wire bonding device is performing bonding processing, and
Figures (A) to (C) are explanatory diagrams showing the movement of the capillary tool of the device, Figure 4 is an explanatory diagram showing the schematic configuration of an embodiment of the present invention, and Figure 5 is Fig. 6 is an explanatory diagram showing a state in which the bonding point is heated by radar irradiation, the first is an explanatory diagram showing the state in which the bonding wire is crimped to the bonding point, and Fig. 7 is the second bonding point FIG. 3 is an explanatory diagram showing a state in which the capillary tool is being moved to. 20... is the bonding part, 2... is the semiconductor plate. G, 22... Lead frame, 23... Capillary two #, J 4... 1z-f irradiation section, 25... Ponding head, 26... Rede supply pipe, ii y
v-de generator, 28 river irradiation port, 29... bonding line, 30.33... bonding point, 40...
・Wire bonding device. Applicant's agent Patent attorney Takehiko Suzue 9- No. 11 n Figure 3 (A) (B) (c)
Claims (1)
ンディング部の上方に昇降自在に設けられ、所望長のが
ンディング線を導出するキャピラリーツールと、前記が
ンディング線の被ポンディング体との接続部に照射口を
向けて設けられたレーデ照射部とを具備することを特徴
とするワイヤポンディング装置。a capillary tool which is provided above the bonding section so as to be able to rise and fall and which leads out a bonding wire of a desired length; A wire bonding device comprising: a radar irradiation section provided with an irradiation port facing the connection section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111225A JPS592333A (en) | 1982-06-28 | 1982-06-28 | Wire bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111225A JPS592333A (en) | 1982-06-28 | 1982-06-28 | Wire bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS592333A true JPS592333A (en) | 1984-01-07 |
Family
ID=14555709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111225A Pending JPS592333A (en) | 1982-06-28 | 1982-06-28 | Wire bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS592333A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4893742A (en) * | 1988-12-21 | 1990-01-16 | Hughes Aircraft Company | Ultrasonic laser soldering |
| US5614113A (en) * | 1995-05-05 | 1997-03-25 | Texas Instruments Incorporated | Method and apparatus for performing microelectronic bonding using a laser |
| KR970053199A (en) * | 1995-12-30 | 1997-07-29 | 황인길 | Thermal heating method of package during wire bonding of semiconductor manufacturing process |
-
1982
- 1982-06-28 JP JP57111225A patent/JPS592333A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4893742A (en) * | 1988-12-21 | 1990-01-16 | Hughes Aircraft Company | Ultrasonic laser soldering |
| US5614113A (en) * | 1995-05-05 | 1997-03-25 | Texas Instruments Incorporated | Method and apparatus for performing microelectronic bonding using a laser |
| KR970053199A (en) * | 1995-12-30 | 1997-07-29 | 황인길 | Thermal heating method of package during wire bonding of semiconductor manufacturing process |
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