JPH03165437A - Surface analyzing device - Google Patents
Surface analyzing deviceInfo
- Publication number
- JPH03165437A JPH03165437A JP1305164A JP30516489A JPH03165437A JP H03165437 A JPH03165437 A JP H03165437A JP 1305164 A JP1305164 A JP 1305164A JP 30516489 A JP30516489 A JP 30516489A JP H03165437 A JPH03165437 A JP H03165437A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electron beam
- process device
- image
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005211 surface analysis Methods 0.000 claims description 13
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 35
- 238000004458 analytical method Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 5
- 238000013507 mapping Methods 0.000 abstract description 4
- 230000001133 acceleration Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract 1
- 238000004451 qualitative analysis Methods 0.000 description 4
- 238000004445 quantitative analysis Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 241001494479 Pecora Species 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電子線マイクロアナライザ（ＥＰＭＡ）、走査
型電子顕微鏡（ＳＥＭ）等の表面分析装置におけるビー
ム条件表示に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to beam condition display in surface analysis devices such as electron beam microanalyzers (EPMA) and scanning electron microscopes (SEM).
［従来技術］
電子線マイクロアナライザ、走査型電子顕微鏡等の表面
分析装置は直径数十オングストロームに絞った電子ビー
ムで試料上を走査しつつ、ビームが通過するとき、各試
料点から生じる種々の情報を電気的に検出し、走査に同
期させて、ブラウン管上に画像として取り出すとともに
、定性、定量分析ができるようにしたものである。[Prior art] Surface analysis devices such as electron beam microanalyzers and scanning electron microscopes scan a sample with an electron beam focused to a diameter of several tens of angstroms, and collect various information generated from each sample point as the beam passes. This system electrically detects the image, synchronizes it with scanning, and outputs it as an image on a cathode ray tube, making it possible to perform qualitative and quantitative analysis.
電子ビームで照射された試料部からは、各種のシグナル
が生じ、そのいずれを取り出して結像に用いるかにより
、二次電子像、反射電子像、吸収電子像、起電力像、ル
ミネッセンス像、Ｘ線像、オージェ電子像などが観測で
きる。Various signals are generated from the sample portion irradiated with the electron beam, and depending on which signal is extracted and used for imaging, it can be used as a secondary electron image, reflected electron image, absorbed electron image, electromotive force image, luminescence image, Line images, Auger electron images, etc. can be observed.
このような表面分析装置において、従来、ビームの加速
電圧、ビーム径等のビーム条件はインジケータにディジ
タル表示したり、アナログメータに表示したりしている
。Conventionally, in such a surface analysis apparatus, beam conditions such as beam acceleration voltage and beam diameter are displayed digitally on an indicator or displayed on an analog meter.
［発明が解決しようとする課題」
上記のような従来のビーム条件表示方法では、自動分析
中、特に、ＣＲＴ上に定性、定量分析結果やマツピング
像の表示を行っている場合に、電子ビーム条件をモニタ
するには、わざわざインジケータ表示をみる必要があり
、面倒であるとともに、視認性が悪いという問題点があ
った。[Problems to be Solved by the Invention] With the conventional beam condition display method as described above, it is difficult to display the electron beam conditions during automatic analysis, especially when displaying qualitative and quantitative analysis results and mapping images on a CRT. In order to monitor this, it is necessary to take the trouble to look at the indicator display, which is troublesome and has the problem of poor visibility.
本発明は上記のような従来技術の欠点を解消するために
創案されたものであり、自動分析中に一目でビーム条件
を確認することができる、表面分析装置を提供すること
を目的とする。The present invention was devised to solve the above-mentioned drawbacks of the prior art, and an object of the present invention is to provide a surface analysis device that allows beam conditions to be confirmed at a glance during automatic analysis.
［課題を解決するための手段］
上記目的を達成するために、本発明における表面分析装
置は、表面分析機器からビーム条件が入力されるデータ
処理装置と、このデータ処理装置の出力が映像信号発生
手段を介して入力される表示手段とを有する。[Means for Solving the Problems] In order to achieve the above object, the surface analysis device of the present invention includes a data processing device into which beam conditions are input from the surface analysis device, and an output of the data processing device that generates a video signal. and a display means for receiving input via the means.
［作用コ
上記のように構成された表面分析装置では、表面分析機
器から試料の検出信号とともにビーム条件がデータ処理
装置に入力され、このデータ処理装置の出力信号が映像
信号発生手段に入力される。そして、映像信号発生手段
からのビーム条件に応じた映像信号が表示装置に入力さ
れ、表示装置にビーム条件がグラフィックイメージで表
示される。[Operation] In the surface analysis device configured as described above, the beam conditions are inputted from the surface analysis device together with the sample detection signal to the data processing device, and the output signal of this data processing device is inputted to the video signal generation means. . Then, a video signal corresponding to the beam condition from the video signal generating means is input to the display device, and the beam condition is displayed as a graphic image on the display device.
［実施例］
実施例について第１図の表面分析装置のブロック図と第
２図の表示例により説明する。第１図において、電子線
マイクロアナライザ１にデータ処理装置２が接続され、
このデータ処理装置２が映像信号発生回路３を介して表
示装置４に接続されている。電子線マイクロアナライザ
１では、電子銃からの電子ビームによって試料上が走査
され、各試料点から生じるＸ線、二次電子、反射電子、
オージェ電子等が検出器により検出されてデータ処理装
置２に取り込まれる。この時、同時に電子ビームの加速
電圧、ビーム径等の電子ビーム条件が電子線マイクロア
ナライザ１からデータ処理装置２に入力されている。そ
して、データ処理装置２は検出信号により、定性分析・
定量分析・線分析・面分析等の自動分析を行い、映像信
号発生回路３を介して表示装置４に定性分析結果、定量
分析結果あるいは成分別や濃度別のマツピング表示を行
う。一方、電子ビーム条件の表示を行う場合には、デー
タ処理装置２からビーム条件に応じた信号が映像信号発
生回路３を介して表示装置４に入力され、電子ビーム条
件がグラフィックイメージとして表示装置４に表示され
る。[Example] An example will be described with reference to a block diagram of a surface analysis apparatus shown in FIG. 1 and a display example shown in FIG. In FIG. 1, a data processing device 2 is connected to an electron beam microanalyzer 1,
This data processing device 2 is connected to a display device 4 via a video signal generation circuit 3. In the electron beam microanalyzer 1, the sample is scanned by an electron beam from an electron gun, and X-rays, secondary electrons, backscattered electrons, and
Auger electrons and the like are detected by a detector and taken into the data processing device 2. At this time, electron beam conditions such as electron beam acceleration voltage and beam diameter are simultaneously input from the electron beam microanalyzer 1 to the data processing device 2. Then, the data processing device 2 performs qualitative analysis and
Automatic analysis such as quantitative analysis, line analysis, area analysis, etc. is performed, and qualitative analysis results, quantitative analysis results, or mapping by component or concentration are displayed on the display device 4 via the video signal generation circuit 3. On the other hand, when displaying the electron beam conditions, a signal corresponding to the beam conditions is input from the data processing device 2 to the display device 4 via the video signal generation circuit 3, and the electron beam conditions are displayed as a graphic image on the display device 4. will be displayed.
これにより、表示装置４には、電子銃６、収束レンズ７
、対物レンズ８、分析試料９のイメージとともに、電子
ビーム条件が電子ビーム５の流九、明るさ、太さにより
表示される。As a result, the display device 4 includes the electron gun 6 and the converging lens 7.
, the objective lens 8, and the image of the analysis sample 9, as well as the electron beam conditions are displayed in terms of flow rate, brightness, and thickness of the electron beam 5.
表示装置４の表示面には、第２図のように電子ビーム５
が、例えば、黄色の破線の流れで表示され、電子ビーム
を加速する加速電圧が低いときは破線の流れを遅く、逆
に加速電圧が高いときには破線の流れを速くする。また
、ビーム電流が小さいときは、破線の色を暗く、逆に太
きいときは明るくする。更に、ビーム径が小さいときは
、分析試料にあたる電子ビームの太さを細く、太きいと
きは太くする。また、電子ビームがＯＮの時は電子ビー
ムを表示し、ＯＦＦの時は表示しないようにする。この
時、第２図の表示例のように、グラフィックイメージと
ともにディジタル表示も同時に表示することもできる。The display surface of the display device 4 is exposed to an electron beam 5 as shown in FIG.
is displayed, for example, as a yellow dashed line; when the accelerating voltage for accelerating the electron beam is low, the dashed line slows down; on the other hand, when the accelerating voltage is high, the dashed line flows quickly. Also, when the beam current is small, the color of the broken line is dark, and when the beam current is thick, the color of the dashed line is bright. Further, when the beam diameter is small, the thickness of the electron beam hitting the analysis sample is made thin, and when it is large, the thickness of the electron beam is made thick. Further, when the electron beam is ON, the electron beam is displayed, and when it is OFF, it is not displayed. At this time, as in the display example of FIG. 2, a digital display can be displayed simultaneously with the graphic image.
また、分析結果やマツピング表示とともに電子ビーム条
件を同一画面に表示することもできる。Furthermore, the electron beam conditions can be displayed on the same screen along with the analysis results and mapping display.
なお、上記の実施例では、電子線マイクロアナライザに
本発明を適用した場合を説明したが、走査型電子顕微鏡
やイオンビームを用いた表面分析装置等にも本発明を適
用することができる。In the above embodiments, the present invention is applied to an electron beam microanalyzer, but the present invention can also be applied to a scanning electron microscope, a surface analysis device using an ion beam, and the like.
［発明の効果コ
以上説明したように、本発明は、電子ビーム条件をリア
ルタイムにモニタし、グラフィックイメージで表示する
ので、電子ビーム条件を一目で確認することができ、あ
らゆる状態で電子ビーム条件の視認性を良くすることが
できる。[Effects of the Invention] As explained above, the present invention monitors the electron beam conditions in real time and displays them in a graphic image. Visibility can be improved.
【図面の簡単な説明】
第１図は電子線マイクロアナライザを用いた本発明の表
面分析装置を示すブロック図、第２図は本発明のビーム
条件表示の一例を示す図である。
１・・電子線マイクロアナライザ、２・・データ処理装
置、３・・映像信号発生回路、４・・表示装置、５・・
電子ビーム、６・・電子銃、７・・収束レンズ、８・・
対物レンズ９・・分析試料
羊
／
図
≠
図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a surface analysis apparatus of the present invention using an electron beam microanalyzer, and FIG. 2 is a diagram showing an example of beam condition display of the present invention. 1. Electron beam microanalyzer, 2. Data processing device, 3. Video signal generation circuit, 4. Display device, 5.
Electron beam, 6... Electron gun, 7... Converging lens, 8...
Objective lens 9... Analysis sample sheep / Figure ≠ Figure
Claims (1)
処理装置と、このデータ処理装置の出力が映像信号発生
手段を介して入力される表示手段とを有し、ビーム条件
をグラフィックイメージで表示することを特徴とする表
面分析装置。(1) It has a data processing device into which beam conditions are input from a surface analysis device, and a display means into which the output of this data processing device is input through a video signal generation means, and displays the beam conditions in a graphic image. A surface analysis device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305164A JP2775928B2 (en) | 1989-11-24 | 1989-11-24 | Surface analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305164A JP2775928B2 (en) | 1989-11-24 | 1989-11-24 | Surface analyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03165437A true JPH03165437A (en) | 1991-07-17 |
| JP2775928B2 JP2775928B2 (en) | 1998-07-16 |
Family
ID=17941836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1305164A Expired - Fee Related JP2775928B2 (en) | 1989-11-24 | 1989-11-24 | Surface analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2775928B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017179137A1 (en) * | 2016-04-13 | 2017-10-19 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
| JP2022021153A (en) * | 2020-07-21 | 2022-02-02 | 日本電子株式会社 | Charged particle beam device and setting support method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4517323B2 (en) * | 2000-07-19 | 2010-08-04 | 株式会社島津製作所 | Electron microanalyzer measurement data correction method |
-
1989
- 1989-11-24 JP JP1305164A patent/JP2775928B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017179137A1 (en) * | 2016-04-13 | 2017-10-19 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
| JPWO2017179137A1 (en) * | 2016-04-13 | 2018-10-18 | 株式会社日立ハイテクノロジーズ | Charged particle beam equipment |
| JP2022021153A (en) * | 2020-07-21 | 2022-02-02 | 日本電子株式会社 | Charged particle beam device and setting support method |
| US11587761B2 (en) | 2020-07-21 | 2023-02-21 | Jeol Ltd. | Charged particle beam apparatus and setting assisting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2775928B2 (en) | 1998-07-16 |
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