JPH0316424A - Semiconductor switching device - Google Patents

Abstract

PURPOSE:To improve the reliability, to extend the service life and to easily replace a switch block even when a fault takes place by providing attachably/ detachably the switch block composed of plural semiconductor switches. CONSTITUTION:A switch block 10 composed of a FET 8 as a semiconductor switch is used in place of a thyratron being a conventional vacuum tube. Plural FETs 8 are arranged to a 1st terminal board 11 in the switch block 10 and the drain terminals of 1st electrodes are connected directly thereto. A 2nd terminal board 12 is arranged with a prescribed interval while pinching the 1st terminal board 11 and the FETs 8 and source terminals S as 2nd electrodes of each FET 8 are connected. Spacers 17, 18 are interposed between the terminal boards 11, 12. Plural switch blocks 10 are inserted between the conductive contacts 16 of a switch block mounting device 13, held elastically and connected electrically through the conductive contacts 16 to form a serial/parallel circuit.

Description

[Detailed description of the invention] [Industrial application field]

The present invention relates to a semiconductor switch device for high voltage and high current, which constitutes a part of a pulse generation circuit used in a pulse laser device or the like.

[Conventional technology]

Figure 6 shows, for example, "Copper Paper Lasers"
Come of Age (Laser Focus. July issue,
1982) COPPER'VAPORLASE
RS COMEOF AGIE (LASER FOC
It is a circuit diagram showing a pulse generation circuit for a conventional copper vapor laser device, as described in US, JtlLY, 1982) J. In the figure, l is a high-voltage DC power supply, 2 is a charging glue actor, and 3 is a charging 4 is a capacitor for charging and discharging, 5 is a charging resistor, 6 is a thyratron switch for discharging, and 7 is a laser tube. Next, the operation will be explained. High voltage (several KV to tens of KV) generated from DC power supply I
) is charged to the capacitor 4 through the reactor 2, diode 3, and resistor 5. Next, when a conductive signal is applied to the grid of the thyratron switch 6 and the thyratron switch 6 becomes conductive, the voltage stored in the capacitor 4 passes through the thyratron switch 6 and is applied to the laser tube 7 as a pulse voltage. . At this time, since the impedance of the laser tube 7 becomes significantly smaller than the resistance value of the resistor 5, the current flowing through the thyratron switch 6 mainly flows through the laser tube 7. This excites the laser tube 7 and causes laser oscillation. Generally, in the case of a copper vapor laser device, a higher laser output can be obtained by applying a steeper pulse voltage to the laser tube 7, so the thyratron switch 6 used as a switch is required to perform switching of several tens of nanoseconds.

[Problem to be solved by the invention]

Since the pulse generation circuit used in conventional copper vapor laser equipment etc. is configured as described above, the laser tube 7
In order to increase the laser efficiency by making the pulse voltage supplied to the laser more steep, a thyratron switch 6 is used as the switch used in the pulse generation circuit, and is capable of switching on in several tens of nanoseconds. Since the thyratron switch 6 is a vacuum tube, it has a finite lifespan and must be replaced frequently.Also, since the thyratron switch 6 is a handmade product, there are individual differences in current rise and switching time that affect laser efficiency. There were problems such as variations in quality and poor quality stability and reliability. This invention was made to solve the above-mentioned problems, and provides a semiconductor switch device suitable for use in a pulse generation circuit, which has a semi-permanent life and can improve stability and reliability. The purpose is to obtain.

[Means to solve the problem]

In the semiconductor switch device according to the present invention, a plurality of semiconductor switches are disposed on one of two opposing terminal boards and their first electrodes are connected, and each semiconductor switch is arranged on the other terminal board. A plurality of switch blocks each having a second electrode connected thereto are detachably inserted and held between a plurality of conductive contacts provided on a mounting board.

[Effect]

By using a plurality of semiconductor switch devices, the semiconductor switch device according to the present invention has improved reliability and a longer life span, and even if a failure occurs, the switch block can be easily replaced.

【Example】

An embodiment of the present invention will be described below with reference to the drawings. 1st
In FIGS. 5 to 5, parts corresponding to those in FIG. 6 are designated by the same reference numerals and their explanations will be omitted. In FIG. 5, 8 is a plurality of semiconductor switches, and in this embodiment, FET (field effect transistor) 8 is used. These FE78 are n FET8
A plurality of series circuits in which the drain terminal D and source terminal S of are connected to each other are connected in parallel between the connection point of the diode 3 and the capacitor 4 and the DC power supply 1, and
Further, each FET 8 is connected in parallel to form a series-parallel circuit. 91-9. , is the human power terminal of the conduction signal, and each F in the n parallel circuits of FET8
Commonly connected to gate terminal G of E78. Reference numeral 10 denotes a switch block that controls a parallel circuit of a plurality of FETs 8. FIG. 1 shows the configuration of the switch block 10, where 11 is a first terminal board, on which a plurality of (six in the figure) FETs 8 are arranged, and drain terminals (not shown) are arranged as their first electrodes. ) are directly connected. A second terminal 12 is arranged at a predetermined interval between the first terminal board 11 and the FET 8.
A source terminal S serving as a second electrode of each FET 8 is connected to the terminal plate. Note that the first and second terminal boards 1
As shown in FIGS. 3 and 4, which will be described later, a spacer 17.18 is interposed between the first and second parts.
Illustration is omitted in the figure. FIG. 2 shows a switch block mounting device 13 for mounting the switch block 10. As shown in FIG. In Fig. 2, 14 is the mounting board, and l5 is the mounting board 14.
A plurality of insulators are arranged on the top at predetermined intervals, 16 is a plurality of conductive contacts provided between each insulator 15,
It is formed into a substantially Ω-shape as shown in the figure using a leaf spring member. 3 and 4 show the switch block 10 mounted on the switch block mounting device 13. FIG. In FIG. 3, 17.18 is the first and second terminal board 1.
1.12. In addition, the fourth
The figure shows the condition with the spacer 18 removed. 3 and 4, a plurality of switch blocks 10 are inserted between each conductive contact 6, are held elastically, and are electrically connected to each other via each conductive contact 16. In this way, the series-parallel circuit shown in FIG. 5 is constructed. Next, the operation will be explained. In order to improve the stability of the switch and make it short in life, this embodiment uses an FET 8 as a semiconductor switch in place of the conventional cycitron switch 6, which is a vacuum tube. However, the thyratron switch 6 has realized several K■ to several tens of KV, several tens of nanoseconds.
No single semiconductor switch currently exists that allows switching of . FETs as semiconductor switches that realize switching of several lQnsec have a maximum withstand voltage of only about 1 KV, so in order to obtain a withstand voltage of several KV to several tens of KV, as shown in Figure 5, a high-speed switch such as FE'78 is required. Multiple series-parallel connections of semiconductors are required. However, when multiple semiconductor switches are connected in series and parallel, a large number of parts are required and the structure is complicated, so if a part of the semiconductor switch is damaged due to trouble, it is difficult to replace it. Sign. In this invention, as shown in FIG.
8 series-parallel circuits are used, and the structure of this series-parallel circuit is made as shown in FIGS. 3 and 4, and the switch block 10 as shown in FIG. 1 is used as one unit. It is designed to be removably inserted in between. By adopting such a structure, for example, if a part of multiple F-T8s is destroyed, the switch block lO can be pulled out,
Replacement can be performed extremely easily by newly inserting a normal switch block 10. In addition, although FET8 was used as a semiconductor switch in the said Example, SIT,Ic;BT,S! Cyrisk, transistor, Cyrisk, etc. may also be used. Furthermore, the present invention is applicable not only to copper vapor laser devices and the like, but also to semiconductor switch devices in other electric circuits.

【Effect of the invention】

As described above, according to the present invention, a plurality of semiconductor switches are disposed on one side of two opposing terminal boards, and their first electrodes are connected, and each semiconductor switch is placed on the other terminal board. A plurality of switch blocks each having a second electrode connected thereto are detachably inserted and held between a plurality of conductive contacts provided on a mounting board, so that a predetermined It can perform high-speed switching under pressure-resistant conditions, improving reliability and extending life.
Furthermore, there is an effect that failures in the semiconductor switch can be dealt with by simply replacing the switch block.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a switch block used in a semiconductor switch device according to an embodiment of the present invention, FIG. 2 is a side view showing a switch block mounting device used in the same device, and FIG. Figure 4 is a side view of the switch mounted on the switch block mounting device, Figure 5 is a circuit diagram showing a pulse generation circuit using the same device, and Figure 6 is a conventional copper vapor laser. FIG. 3 is a circuit diagram showing a pulse generation circuit of the device. 8 is a FET, 10 is a switch block, 11 is a first terminal board, 12 is a second terminal board, 13 is a switch block mounting device, 14 is a mounting board, and 16 is a conductive contact. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] a first terminal board on which a plurality of semiconductor switches are arranged and to which the first electrodes of each semiconductor switch are connected; a switch block consisting of a second terminal plate to which electrodes are connected; and a plurality of conductive contacts arranged at predetermined intervals on a mounting board and between which a plurality of the switch blocks are detachably held. A semiconductor switch device comprising: a switch block mounting device including a switch block mounting device;