JPH0316358U - - Google Patents
Info
- Publication number
- JPH0316358U JPH0316358U JP1989076553U JP7655389U JPH0316358U JP H0316358 U JPH0316358 U JP H0316358U JP 1989076553 U JP1989076553 U JP 1989076553U JP 7655389 U JP7655389 U JP 7655389U JP H0316358 U JPH0316358 U JP H0316358U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- mos field
- darlington
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989076553U JPH0316358U (enExample) | 1989-06-29 | 1989-06-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989076553U JPH0316358U (enExample) | 1989-06-29 | 1989-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0316358U true JPH0316358U (enExample) | 1991-02-19 |
Family
ID=31618128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989076553U Pending JPH0316358U (enExample) | 1989-06-29 | 1989-06-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0316358U (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017092472A (ja) * | 2015-11-10 | 2017-05-25 | アナログ デバイシス グローバル | Ｆｅｔ−バイポーラトランジスタの組み合わせ、およびこのようなｆｅｔ−バイポーラトランジスタの組み合わせを備えたスイッチ |
-
1989
- 1989-06-29 JP JP1989076553U patent/JPH0316358U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017092472A (ja) * | 2015-11-10 | 2017-05-25 | アナログ デバイシス グローバル | Ｆｅｔ−バイポーラトランジスタの組み合わせ、およびこのようなｆｅｔ−バイポーラトランジスタの組み合わせを備えたスイッチ |