JPH0316290A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To reduce detrimental effect such as noises and to enable easy adjustment of an optical axis by connecting one electrode to a wiring drawn on an insulating substrate through a sub-mount and by connecting the other electrode to another wiring drawn on the insulating substrate through a lead line. CONSTITUTION:One electrode of light emitting sections 6(1), 6(2), 6(3) is connected to a wiring 2 which is drawn on an insulating substrate through a sub- mount 5. The other electrode is connected to another wirings 7(1), 7(2), 7(3) drawn on the insulating substrate through lead lines 9(1), 9(2), 9(3). If the semiconductor laser is attached to a driving circuit by soldering, etc., for hybrid processing, it is possible to drive each of light emitting sections 6(1), 6(2), 6(3), respectively and independently at a fast speed. Furthermore, it is also possible to allow a semiconductor laser chip 4 and a driving circuit to come near each other. Thereby, the semiconductor laser is resistant to noises and adjustment of an optical axis can be made only in one operation. The optical axis can be corrected readily in this way.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser that is driven in pulses at high output.

[Conventional technology]

FIG. 3 shows a conventional semiconductor laser, in which a laser diode chip 32 is assembled in a metal package 31 of the same type.

[Problem to be solved by the invention]

In the case of this conventional semiconductor laser, it was necessary to provide a socket in a part of the drive circuit to receive the metal package. Furthermore, if the drive circuit does not have a socket, it is necessary to attach the lead wire of the semiconductor laser to the drive circuit by soldering.

However, if the semiconductor laser and the drive circuit are connected in this way, the distance from the drive circuit to the semiconductor laser chip becomes longer in either method, and a large current of 10A or more is applied with a high-speed pulse with a pulse width of 15 to 100nsec. In such a case, noise such as pulse reflection occurs on the drive circuit, causing deterioration of the semiconductor laser.

Furthermore, in the case of incorporating multiple conventional metal package semiconductor lasers (three in the figure) as shown in Figure 4, it is necessary to match the projection lens one-to-one for each semiconductor laser. Therefore, it was necessary to adjust the optical axis and 'y3 for each set. In the figure, 41 to 43 are metal package type semiconductor lasers, 44 to 46 are projecting lenses, and 47 are metal package type semiconductor lasers.
Reference numeral 48 denotes a light emission switching drive section, 48 a driving high-voltage power supply section, and 49 a power supply section.

An object of the present invention is to solve these problems.

[Means to solve the problem]

In order to solve the above problems, the semiconductor laser of the present invention includes:
It includes a semiconductor laser chip having a plurality of light emitting parts, a submount on which this semiconductor laser chip is mounted, and a green-free substrate to which this submount is die-bonded, and one electrode in the light emitting part is connected to the substrate through the submount. It is connected to a wiring drawn on an insulating substrate, and the other electrode is connected via a lead wire to another wiring drawn on an insulating substrate. Preferably, the insulating substrate is attached so that the laser beam from the light emitting section is emitted perpendicularly to the insulating substrate.

[Effect]

By attaching this semiconductor laser to a drive circuit by, for example, soldering or the like to create a hybrid, it is possible to drive each light emitting section independently at high speed. Since the semiconductor laser chip and the drive circuit can be connected without using a socket or the like, they can be brought close to each other, and the adverse effects of noise on the semiconductor laser are reduced. Furthermore, since a plurality of light emitting sections are arranged close to each other within one chip, one light projection lens is sufficient for the plurality of light emitting sections, and the optical axis. 2M adjustment only needs to be done once.

[Tip example]

FIG. 1 is a perspective view showing an embodiment of the present invention. On the ceramic base 1, metal patterns 2, 3 (1), 3 (2) and 3 (
3) is in full force. A submount 5 on which a semiconductor laser chip 4 and a ceramic plate 8 are mounted is die-bonded onto the ceramic base 1.

The semiconductor laser chip 4 has three laser emitting parts 6 (1) whose laser emission positions and intervals are precisely determined.
6 (2) and 6 (3>).The submount 5 is made of copper, and therefore the laser emitting part 6 (1)
, 6 (2) and 6 (3), one electrode is electrically connected to the metal pattern 2 via the submount 5.

The semiconductor laser chip 4 is arranged so as to be located on the upper side of one side of the submount 5 when the submount 5 is die-bonded onto the ceramic base 1, and the semiconductor laser chip 4 is located at the upper part of one side of the submount 5, and each of the laser emitting parts 6 (1), 6 (2), and 6 When (3) is excited, laser light is emitted vertically upward relative to the ceramic base 1.

The submount 5 has a metal pattern 7 (1), which is the same as the one on which the semiconductor laser chip 4 is installed.
Band-shaped ceramic k with 7(2) and 7(3)
8 is fixed to the opposite end of the semiconductor laser chip 4. And metal pattern 7(+), 7(2)
and 7(3>) and laser emitting parts 6(i), 6(2) and 6(3) are electrically connected by wires 9(i), 9(2> and 9(3)), respectively. When the submount 5 is die-bonded to the ceramic base 1, the metal pattern 7 of the ceramic plate 8 (1) 7
(2) and 7(3) are electrically connected to the metal patterns 3(1), 3(2) and 3(3>) on the ceramic base 1.

With this configuration, three laser emitting parts 6
(1), 6 (2) and 6 (3), metal pattern 2 is ``carrying electrode, metal pattern 3 (1)''.
, 3 (2) and 3 (3) are individual electrodes. Therefore, by selecting the individual electrodes, the laser emitting part 6
(1), 6(2) and 6(3) can be selectively driven.

FIG. 2 is a block diagram showing a light emitting device in which the semiconductor laser device of this embodiment is attached to a drive circuit and further provided with optical means. As shown in the figure, one light projecting lens 22 is sufficient for the semiconductor laser device 21 of this embodiment, which has three laser emitting sections. Therefore, if the semiconductor laser device 21 is accurately soldered to a predetermined position on the drive circuit including the light emission switching drive section 23, the driving high-voltage power supply section 24, and the power supply section 25, the semiconductor laser device 21 and the light emitting lens can be connected to each other. By adjusting the optical axis with 22 only once, 3
laser emitting parts 6 (1), 6 (2) and 6 (
The optical axis adjustment for 3) is made at the same time. Furthermore, since the semiconductor laser device 21 can be directly connected to the drive circuit, the semiconductor laser chip and the drive circuit can be brought close to each other. Therefore, influences such as noise are reduced and reliability is improved.

Note that although a copper submount is used in this embodiment, the present invention is not limited to this; for example, a ceramic submount whose surface is metallized may also be used.

Further, the number of laser emitting parts provided in the semiconductor laser chip is not limited to three.

〔Effect of the invention〕

As explained above, according to the semiconductor laser of the present invention,
The semiconductor laser chip and the drive circuit can be connected without using a socket or the like by attaching it to the drive circuit by, for example, soldering or the like to create a hybrid, so they can be brought close to each other and the semiconductor laser is less likely to be adversely affected by noise. Furthermore, since a plurality of light emitting sections are placed close to each other within one chip, one light projecting lens is sufficient for the plurality of light emitting sections. Therefore, the optical axis 2yl only needs to be changed once, and correction of the optical axis becomes very simple.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing an embodiment of the present invention, FIG. 2 is a view showing a light emitting means constructed using this embodiment, FIG. 3 is a conventional metal package type semiconductor laser, and FIG. 1 is a diagram showing a light emitting means constructed using a conventional semiconductor laser. 1... Ceramic base, 2, 3 (1), 3 (
2), 3(3), 7(1), 7(2) 7(3
)...Metal pattern, 4...Semiconductor laser chip, 5...Submount, 6(1), 6(2), 6
(3)...Light emitting part, 8...Ceramic temporary, 9(1)
, 9(2), 9(3)...Lead wire, 21.
... Semiconductor laser, 22... Light projection lens. Engraving of drawings (no changes to content)

Claims (1)

[Claims] 1. A semiconductor laser chip having a plurality of light emitting parts, a submount on which this semiconductor laser chip is mounted, and an insulating substrate to which this submount is die-bonded, and one of the light emitting parts electrodes are connected to wiring drawn on the insulating substrate via the submount,
A semiconductor laser in which the other electrode is connected to another wiring drawn on the insulating substrate via a lead wire. 2. The semiconductor laser according to claim 1, wherein the semiconductor laser chip is mounted so that laser light from a light emitting section is emitted perpendicularly to the insulating substrate.