JPH03155120A - Reflection type x-ray mask - Google Patents
Reflection type x-ray maskInfo
- Publication number
- JPH03155120A JPH03155120A JP1294625A JP29462589A JPH03155120A JP H03155120 A JPH03155120 A JP H03155120A JP 1294625 A JP1294625 A JP 1294625A JP 29462589 A JP29462589 A JP 29462589A JP H03155120 A JPH03155120 A JP H03155120A
- Authority
- JP
- Japan
- Prior art keywords
- single crystalline
- crystalline film
- film
- ray
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 abstract description 6
- 239000010937 tungsten Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 239000011733 molybdenum Substances 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000000560 X-ray reflectometry Methods 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002178 crystalline material Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は反射型Ｘ １ｍマスクの製法とその構造及び材
料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a reflective X1m mask, its structure, and materials.
（従来の技術１
従来、Ｘ線マスクとしては、メンプラン膜上に図形状に
タングステン膜や金膜を形成し、透過型にて用いるのが
通例であった。(Prior Art 1) Conventionally, as an X-ray mask, it has been customary to form a tungsten film or a gold film in a graphic shape on a Menplan film and use it as a transmission type.
［発明が解決しようとする課題１
しかし、上記従来技術によるとメンブラン膜歪が大きく
、ひいては図形歪を発生すると云う課題があった。[Problem to be Solved by the Invention 1] However, the above-mentioned prior art has a problem in that the membrane strain is large, and as a result, graphic distortion occurs.
本発明は、かかる従来技術の課題を解決し、基枝歪によ
る図形歪のない、新しい反射型のＸ線マスクを提供する
と共に、該反射型Ｘ線マスクの図形状反射部の反射率の
高いものを提供する事を目的とする。The present invention solves the problems of the prior art and provides a new reflective X-ray mask that is free of graphical distortion due to cardinal distortion, and also provides a reflective X-ray mask with a high reflectance of the graphical reflection part. The purpose is to provide something.
［課題を解決するための手段］
上記課題を解決し、上記目的を達成する為に、本発明は
、反射型Ｘ線マスクに関し、単結晶から成るＸ線透過能
を有する基板表面に、図形状にＸ線反射能を有する単結
晶膜を形成する手段をとる。[Means for Solving the Problems] In order to solve the above problems and achieve the above objects, the present invention relates to a reflective X-ray mask, and the present invention relates to a reflective A method is taken to form a single crystal film having X-ray reflective ability.
［実 施 例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す反射型Ｘ線マスクの製
法を示す工程順の断面図である。すなわち、例えば（Ａ
）（ｉｌｌ）結晶面を有する１ｍｍ厚程度のシリコン単
結晶等から成る単結晶基板１１の表面には、エピタキシ
ャル法によりヘテロジニアスにｌＬＬｍ厚のタングステ
ン単結晶膜等から成る単結晶膜１２を形成し、（Ｂ）前
記単結晶膜１２をホト・エツチングにより図形状単結晶
Ｉｆ！１３を残して形成したものである。FIG. 1 is a cross-sectional view showing the process steps for manufacturing a reflective X-ray mask according to an embodiment of the present invention. That is, for example (A
)(ill) On the surface of a single crystal substrate 11 made of silicon single crystal or the like having a crystal plane and having a thickness of about 1 mm, a single crystal film 12 made of a tungsten single crystal film or the like having a thickness of LLm is heterogeneously formed by an epitaxial method. , (B) The single crystal film 12 is photo-etched to form a figure-shaped single crystal If! It was formed by leaving 13.
第２図は本発明の他の実施例を示す反射型Ｘ線マスクの
断面図である。すなわち、単結晶基板２１の表面には、
まづ、絶縁膜２２として、熱酸化５ｉＯａ膜やＣＶ Ｄ
Ｓ ｉ Ｏ＊膜等を全面に形成後、該絶縁膜をホト・
エツチングにより図形状に窓開けし、つづいて、選択エ
ピタキシャル法により図形状単結晶膜２３を、タングス
テンあるいは金の単結晶膜を図形状に形成し、Ｘ線の反
射膜となしたものである。FIG. 2 is a sectional view of a reflective X-ray mask showing another embodiment of the present invention. That is, on the surface of the single crystal substrate 21,
First, as the insulating film 22, a thermally oxidized 5iOa film or a CVD film is used.
After forming a SiO* film etc. on the entire surface, the insulating film is photo-photographed.
A window is opened in a figure shape by etching, and then a figure-shaped single crystal film 23 is formed by a selective epitaxial method using a tungsten or gold single crystal film in a figure shape to serve as an X-ray reflecting film.
尚、単結晶基板１１．２１は、単結晶シリコンの他、水
晶やサファイヤ等、他のＸ線透過能を有する単結晶材料
であっても良（、更に、図形状単結晶膜１３．２３はタ
ングステン単結晶膜の他、全単結晶膜やモリブデン単結
晶膜等信のｘＩｓ反射材料から成る図形状単結晶膜であ
っても良い。In addition to single-crystal silicon, the single-crystal substrate 11.21 may be made of other single-crystal materials having X-ray transmittance, such as quartz or sapphire (furthermore, the graphic-shaped single-crystal film 13.23 may be In addition to the tungsten single crystal film, a graphical single crystal film made of a xIs reflective material such as an all single crystal film or a molybdenum single crystal film may be used.
〔発明の効果〕
本発明により、図形歪のない、且つ反射型で投影できる
Ｘ線露光用のマスクが提供できる効果がある。[Effects of the Invention] The present invention has the effect of providing an X-ray exposure mask that is free from graphic distortion and can be projected in a reflective manner.
第１図及び第２図は、本発明の実施例を示す反射型Ｘ線
マスクの製法や材質等を示す断面図である。
１１．２１・・・単結晶基板
１２・・・・・・単結晶膜
２２・・・・・・絶縁膜
１３．２３・・・図形状単結晶膜
以上FIGS. 1 and 2 are cross-sectional views showing the manufacturing method, materials, etc. of a reflective X-ray mask according to an embodiment of the present invention. 11.21...Single crystal substrate 12...Single crystal film 22...Insulating film 13.23...More than figure-shaped single crystal film
Claims (1)
には図形状にモリブデン、タングステン、金、鉛等から
成る単結晶膜が形成されて成る事を特徴とする反射型Ｘ
線マスク。Reflection type
line mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1294625A JPH03155120A (en) | 1989-11-13 | 1989-11-13 | Reflection type x-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1294625A JPH03155120A (en) | 1989-11-13 | 1989-11-13 | Reflection type x-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03155120A true JPH03155120A (en) | 1991-07-03 |
Family
ID=17810180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1294625A Pending JPH03155120A (en) | 1989-11-13 | 1989-11-13 | Reflection type x-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03155120A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622787A (en) * | 1993-12-09 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same |
| WO1999024869A1 (en) * | 1997-11-11 | 1999-05-20 | Nikon Corporation | Photomask, aberration correcting plate, exposure device and method of producing microdevice |
| WO1999028786A1 (en) * | 1997-12-01 | 1999-06-10 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography mask blank and manufacturing method therefor |
| WO2000019271A1 (en) * | 1998-09-30 | 2000-04-06 | Nikon Corporation | Photomask and exposure method |
-
1989
- 1989-11-13 JP JP1294625A patent/JPH03155120A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622787A (en) * | 1993-12-09 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same |
| US5702849A (en) * | 1993-12-09 | 1997-12-30 | Mitsubishi Denki Kabushiki Kaisha | Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same |
| WO1999024869A1 (en) * | 1997-11-11 | 1999-05-20 | Nikon Corporation | Photomask, aberration correcting plate, exposure device and method of producing microdevice |
| US6653024B1 (en) | 1997-11-11 | 2003-11-25 | Nikon Corporation | Photomask, aberration correction plate, exposure apparatus, and process of production of microdevice |
| WO1999028786A1 (en) * | 1997-12-01 | 1999-06-10 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography mask blank and manufacturing method therefor |
| US5978441A (en) * | 1997-12-01 | 1999-11-02 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography mask blank and manufacturing method therefor |
| WO2000019271A1 (en) * | 1998-09-30 | 2000-04-06 | Nikon Corporation | Photomask and exposure method |
| US6727025B1 (en) | 1998-09-30 | 2004-04-27 | Nikon Corporation | Photomask and exposure method |
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