JPH03154062A - Formation of resist pattern - Google Patents
Formation of resist patternInfo
- Publication number
- JPH03154062A JPH03154062A JP1292220A JP29222089A JPH03154062A JP H03154062 A JPH03154062 A JP H03154062A JP 1292220 A JP1292220 A JP 1292220A JP 29222089 A JP29222089 A JP 29222089A JP H03154062 A JPH03154062 A JP H03154062A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- resist
- cresol
- substrate
- compsn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000006884 silylation reaction Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 3
- 239000011342 resin composition Substances 0.000 claims description 15
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 abstract description 15
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 abstract description 14
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 abstract description 12
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 abstract description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 abstract description 2
- 239000004305 biphenyl Substances 0.000 abstract 1
- 235000010290 biphenyl Nutrition 0.000 abstract 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 229920003986 novolac Polymers 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 5
- 150000002989 phenols Chemical class 0.000 description 5
- 239000000975 dye Substances 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- -1 substituted Chemical class 0.000 description 2
- 150000003739 xylenols Chemical class 0.000 description 2
- QPVRKFOKCKORDP-UHFFFAOYSA-N 1,3-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC(C)(O)CC=C1 QPVRKFOKCKORDP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- GCTFIRZGPIUOAK-UHFFFAOYSA-N n-[[3,5-bis[[(2,3-dihydroxybenzoyl)amino]methyl]phenyl]methyl]-2,3-dihydroxybenzamide Chemical compound OC1=CC=CC(C(=O)NCC=2C=C(CNC(=O)C=3C(=C(O)C=CC=3)O)C=C(CNC(=O)C=3C(=C(O)C=CC=3)O)C=2)=C1O GCTFIRZGPIUOAK-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
レジストパターンの形成方法に関し、
三層レジストプロセスの工程数の減少化および歩留りの
向上を目的とし、
シリル化用樹脂組成物を基板上に塗布し、該樹脂を全面
シリル化後露光し、異方性エツチングを行うように構成
する。[Detailed Description of the Invention] [Summary] Regarding a method for forming a resist pattern, with the aim of reducing the number of steps in a three-layer resist process and improving the yield, a resin composition for silylation is applied onto a substrate, and the After the entire surface of the resin is silylated, it is exposed to light and anisotropic etching is performed.
本発明は、レジストパターンの形成方法に関し、更に詳
しくはシリル化プロセスを利用した微細なポジ形レジス
トパターンの形成方法に関する。The present invention relates to a method for forming a resist pattern, and more particularly to a method for forming a fine positive resist pattern using a silylation process.
〔従来技術および発明が解決しようとする課題］近年半
導体装置の高集積化に伴い、より微細なパターン形成技
術が要求されている。従来は、ノボラック系フォトレジ
ストを単層にてウェハー上に塗布し、縮小投影露光後、
アルカリ水溶液にて現像することによりパターンをウェ
ハー上に転写してきた。しかしながらこのようなウェッ
ト現像プロセスでは現像が等方性に進行する為、高アス
ペクト比のレジストパターンの形成が難しく、特に基板
に段差がある場合では段差の上部（レジスト膜が薄い部
分）と段差の底部（レジスト膜が厚い部分）でのレジス
ト膜厚の違いから線幅制御が難しいという問題が生じて
いる。このため異方性現像プロセスが要求されてきてい
る。[Prior Art and Problems to be Solved by the Invention] As semiconductor devices have become more highly integrated in recent years, finer pattern forming techniques have been required. Conventionally, a single layer of novolak photoresist was applied onto a wafer, and after reduction projection exposure,
The pattern has been transferred onto a wafer by developing with an alkaline aqueous solution. However, in such a wet development process, development progresses isotropically, making it difficult to form a resist pattern with a high aspect ratio.Especially when there is a step on the substrate, the upper part of the step (where the resist film is thin) and the part between the steps are difficult to form. A problem arises in that line width control is difficult due to differences in resist film thickness at the bottom (thick resist film part). For this reason, anisotropic development processes have been required.
異方性現像プロセスとして、従来ドライエッチングを利
用した三層レジストプロセスが知られている（第２図参
照）。As an anisotropic development process, a three-layer resist process using dry etching is conventionally known (see FIG. 2).
すなわち、このプロセスにおいては、基板１上に下層２
のレジスト（例えばノボラック樹脂）をスピンコードし
、次いでプリベークし、中間層３としてＳＯＧ （スピ
ンオングラス）をスピンコードし、次いで熱処理する。That is, in this process, a lower layer 2 is formed on a substrate 1.
A resist (for example, novolac resin) is spin-coded, then prebaked, and SOG (spin-on glass) is spin-coded as the intermediate layer 3, followed by heat treatment.
更に上層４にフォトレジストをスピンコードし三層構造
の膜を形成する。Further, a photoresist is spin-coded on the upper layer 4 to form a three-layer structure film.
従来このような三層構造のレジスト膜の露光／現像プロ
セスにおいては、上層４のレジストをパターニングし、
そのパターンをマスクとして中間層３ （ＳＯＧ）をド
ライエツチングする。次いで中間層３をマスクとして下
層２の例えばノボラック樹脂を０．−ＲＩＢ （リアク
ティブイオンエツチング）にてエツチングを行ないレジ
ストパターン５を形成する。Conventionally, in the exposure/development process for a resist film with a three-layer structure, the upper layer 4 of the resist is patterned,
Using the pattern as a mask, the intermediate layer 3 (SOG) is dry etched. Next, using the intermediate layer 3 as a mask, apply 0.00% of the lower layer 2, for example, a novolac resin. - Perform etching using RIB (reactive ion etching) to form a resist pattern 5.
しかしこの、三層レジストプロセスは下層２のノボラッ
ク樹脂にて基板段差を平坦化し、その平坦化層を異方性
エツチングのＯ！−ＲＩＥによりエツチングするので高
アスペクト比のパターンが形成出来るが、工程数が多い
というデメリットがある。However, in this three-layer resist process, the step of the substrate is flattened by the novolac resin of the lower layer 2, and the flattened layer is anisotropically etched with O! - Since etching is performed by RIE, a pattern with a high aspect ratio can be formed, but it has the disadvantage of requiring a large number of steps.
従って三層レジストプロセスは工程数の増加によりコス
ト高となり更に工数の増加によるウェハー上へのゴミ付
着等が発生し歩留りの低下が生じていた。Therefore, the three-layer resist process increases the cost due to the increase in the number of steps, and the increase in the number of steps also causes dust to adhere to the wafer, resulting in a decrease in yield.
本発明は、かかる問題点を解決するためになされたもの
で、シリル化用樹脂組成物（以下、レジスト材料ともい
う）を基板上に塗布し、プリベークし、プリベータ後の
前記樹脂をシリル化剤を用いてシリル化し、次いで露光
し、更に異方性エツチングを行ないポジ形レジストパタ
ーンを形成することを特徴とする。The present invention has been made to solve such problems, and involves coating a silylation resin composition (hereinafter also referred to as a resist material) on a substrate, prebaking, and using the prebaked resin as a silylation agent. The method is characterized in that a positive resist pattern is formed by silylating the resist using a photoresist, followed by exposure and anisotropic etching.
このために、本発明においてはシリル化用樹脂組成物と
して、−旦シリル化した樹脂組成物のシリル基が露光に
よって解離するような樹脂組成物を使用する。かかる樹
脂組成物としては、シリル化反応のサイトとなる部分を
有する樹脂と、光を照射することによってシリル化した
樹脂の解離を促進する酸発生剤とを含有するような樹脂
組成物を用いることができる。For this purpose, in the present invention, a resin composition in which the silyl group of the silylated resin composition is dissociated upon exposure to light is used as the silylation resin composition. As such a resin composition, a resin composition containing a resin having a portion serving as a site for a silylation reaction and an acid generator that promotes dissociation of the silylated resin by irradiation with light may be used. Can be done.
ところで、本発明方法におけるシリル化用樹脂組成物を
構成する樹脂としてはノボラック樹脂を用いるが、他の
フェノール樹脂や、ポリビニルフェノール樹脂等も使用
可能である。Incidentally, although novolac resin is used as the resin constituting the silylation resin composition in the method of the present invention, other phenol resins, polyvinylphenol resins, etc. can also be used.
本発明の樹脂組成物を構成するノボラック樹脂とは、フ
ェノール類とホルムアルデヒドを酸性触媒で縮合させて
得られる可溶可融性樹脂をいう。The novolak resin constituting the resin composition of the present invention refers to a soluble and fusible resin obtained by condensing phenols and formaldehyde with an acidic catalyst.
更に、本発明におけるフェノール類とは、置換基を有し
ないフェノール並びにＣ５〜Ｃ，アルキル基で置換され
たフェノールをいう。置換基は１個でもあるいは複数個
（２〜４個）であってもよい。Furthermore, phenols in the present invention refer to phenols without substituents and phenols substituted with C5-C, alkyl groups. The number of substituents may be one or more (2 to 4).
このようなアルキル置換されたフェノールは、例えばク
レゾール、あるいはキシレノールである。Such alkyl-substituted phenols are, for example, cresol or xylenol.
更に、このようなりレゾールあるいはキシレノールは、
各々異性体（例えば、Ｏ−クレゾール、ｍ−クレゾール
、ｐ−クレゾール）を単独で、もしくは各異性体を所定
割合で用いることができる。Furthermore, such resol or xylenol is
Each isomer (for example, O-cresol, m-cresol, p-cresol) can be used alone or each isomer can be used in a predetermined ratio.
従って、本発明におけるノボラック樹脂とじては、例え
ば、フェノールとホルムアルデヒドを酸触媒で縮合して
得られたノボラック、あるいはｍ−クレゾール／Ｐ−ク
レゾールとホルムアルデヒドとの共縮合物、あるいはま
たｍ−クレゾール／ｐ−クレゾール／３．５−キシレノ
ールとホルムアルデヒドとの共縮合物が好ましく使用さ
れる。Therefore, the novolac resin in the present invention includes, for example, a novolac obtained by condensing phenol and formaldehyde with an acid catalyst, or a co-condensate of m-cresol/P-cresol and formaldehyde, or a co-condensate of m-cresol/P-cresol and formaldehyde. A cocondensate of p-cresol/3,5-xylenol and formaldehyde is preferably used.
また、本発明方法において用いられる樹脂組成物を構成
する酸発生剤は、露光工程において酸（プロトン）を発
生する化合物を意味する。このような酸発生剤としては
、例えば２．４−ビス（トリクロロメチル）−６−フェ
ニル−３−）リアジン、４．４′−ジターシャリブチル
ジフェニルヨードニウムクロロホスフェイト、ｌ、２−
ナフトキノンジアジド−４−スルホン酸のエステル化合
物等が好ましく用いられる。Furthermore, the acid generator constituting the resin composition used in the method of the present invention means a compound that generates acid (protons) during the exposure step. Examples of such acid generators include 2,4-bis(trichloromethyl)-6-phenyl-3-)riazine, 4,4'-ditertiarybutyldiphenyliodonium chlorophosphate, l,2-
Ester compounds of naphthoquinonediazide-4-sulfonic acid and the like are preferably used.
他の酸発生剤を用いても良い。また、レジスト溶剤とし
てもＥＣＡ、酢酸エステル、ＰＧＭＥＡ、シクロヘキサ
ノン等の他の溶剤を用いても良い。更に、必要に応じて
レジスト中に吸光剤として染料を加えることも可能であ
る。ちなみに、ｇ−１ｉｎｅ（露光波長４３６ｎｍ）及
び１−１ｉｎｅ （露光波長３６５ｎｍ）のレジストを
高反射率基板（例えばＡＩ等）で使用する場合、露光光
が基板の凹凸で乱反射し未露光部分になるべきレジスト
が露光されてしまう。これを防ぐ為に、吸光剤として露
光反応に寄与しない染料を加えることが一般的である。Other acid generators may also be used. Furthermore, other solvents such as ECA, acetate, PGMEA, and cyclohexanone may be used as the resist solvent. Furthermore, it is also possible to add a dye to the resist as a light absorbing agent, if necessary. By the way, when using g-1ine (exposure wavelength 436 nm) and 1-1ine (exposure wavelength 365 nm) resists on a high reflectance substrate (for example, AI, etc.), the exposure light is diffusely reflected by the unevenness of the substrate, resulting in unexposed areas. The resist that should be exposed will be exposed. To prevent this, it is common to add a dye that does not contribute to the exposure reaction as a light absorber.
したがって、本発明方法を高反射率基板に適応する場合
も、ｇ−１ｉｎｅ及び１−１ｉｎｅレジストと同様に染
料を加えることが出来る。Therefore, when applying the method of the present invention to a high reflectance substrate, a dye can be added in the same manner as in g-1ine and 1-1ine resists.
染料としてはＫａｙａｓｅＬ Ｙｅｌｌｏｗ、 Ｋａｙ
ａｓｅｔ Ｆｌａｖｉｎ。The dyes are KayaseL Yellow, Kay
aset Flavin.
Ｋａｙａ １ ｉｇｈ ｔ （いづれも日本北東社製）
、Ｏｉｌ Ｙｅｌｌｏｗ（シラド化学社製） 、Ａｉ
ｚｅｎ Ｃｏ１１ｏｒ （採土ケ谷化学社製） 、Ｋａ
ｙｃｏｌｌ（親日曹化工社製）、Ｔｉｎｕｖｉｎ（チバ
ガイギー社製）、等が好ましく使用できる。Kaya 1 right (all manufactured by Nippon Tohokusha)
, Oil Yellow (manufactured by Shirad Chemical Co., Ltd.), Ai
zen Co11or (manufactured by Odogaya Chemical Co., Ltd.), Ka
Ycoll (manufactured by Shinichiso Kako Co., Ltd.), Tinuvin (manufactured by Ciba Geigy), etc. can be preferably used.
更に本発明方法におけるエツチング手法も０Ｘ−ＲＩＨ
に限りものでは無く、ＥＣＲエツチング等も可能であり
、その際のガス系も０□以外にＮ ｚ 、 Ａ ｒ等の
ガスを加えることも可能である。Furthermore, the etching method in the method of the present invention is also 0X-RIH.
It is not limited to ECR etching, etc., and the gas system at that time can also include gases such as Nz and Ar in addition to 0□.
本発明方法においては、特に樹脂組成物６を基板１に塗
布した後、プリベークし、ウェハー全面のシリル化を行
う（第１図（ｂ））。７はシリル化された樹脂（レジス
ト）を示す。シリル化は、ウェハーをＨＭＤＳ （ヘキ
サメチレンジシラザン）の気相中に入れてレジストの表
面全体がシリル化されるように行う。この処理において
、レジスト中のノボラック樹脂の一〇Ｈ基が、ＨＭＤＳ
処理により０−Ｓｉ （Ｍｅ） ３に置換されるのでレ
ジストの表面及び表層付近がシリル化されることとなる
。In the method of the present invention, in particular, after applying the resin composition 6 to the substrate 1, it is prebaked and the entire surface of the wafer is silylated (FIG. 1(b)). 7 indicates a silylated resin (resist). The silylation is performed by placing the wafer in a gas phase of HMDS (hexamethylene disilazane) so that the entire surface of the resist is silylated. In this process, the 10H group of the novolac resin in the resist is converted into HMDS.
Since it is replaced by 0-Si (Me) 3 during the treatment, the surface and the vicinity of the surface layer of the resist are silylated.
露光工程においては、プロトン（Ｈ”″）８が発生する
のでシリル基が解離する。未露光部はそのままシリル基
が残存する（第１図（ｃ））。In the exposure step, protons (H"") 8 are generated and the silyl group is dissociated. The silyl group remains in the unexposed area (FIG. 1(c)).
更に説明すると、ＵＶ、 ＤＵＶまたはＥＢにて露光を
行なうと露光領域では酸発生剤からプロトン（Ｈ” ）
８が発生する。プロトンが発生すると置換されていたー
Ｓｔ （Ｍｅ） ２が解離する。その結果、シリル化さ
れた未露光領域とシリル化されていない（シリル基が解
離した）露光領域が形成される。To explain further, when exposure is performed with UV, DUV or EB, protons (H'') are released from the acid generator in the exposed area.
8 occurs. When a proton is generated, the substituted -St (Me) 2 dissociates. As a result, a silylated unexposed region and a non-silylated exposed region (the silyl group has dissociated) are formed.
レジストに吸着したシリル基は高い０ｔ−ＲＩＥ耐性を
持つ。従って、このような基板を０．−ＲＩＢにてエツ
チングすると未露光部はエツチングされず、露光部のみ
エツチングされ、三層レジストプロセス同様のシャープ
なポジ形のレジストパターンが少ない工程数で形成出来
る。The silyl group adsorbed to the resist has high resistance to 0t-RIE. Therefore, such a substrate is 0. -When etching with RIB, the unexposed areas are not etched, and only the exposed areas are etched, and a sharp positive resist pattern similar to the three-layer resist process can be formed with a small number of steps.
実施例１
本発明方法におけるシリル化用レジスト樹脂組成物とし
て、■ｍ−クレゾール／ｐ−クレゾール７３．５−キシ
レノールの共縮合物１００ｇ■露光による酸発生剤とし
ての２，４−ビス（トリクロロメチル）−６−フェニル
−３−トリアジン５ｇを用い、３００ ｇの乳酸エチル
に溶解した。Example 1 As a resist resin composition for silylation in the method of the present invention, ■ 100 g of m-cresol/p-cresol 73.5-xylenol cocondensate ■ 2,4-bis(trichloromethyl 5 g of )-6-phenyl-3-triazine was used and dissolved in 300 g of ethyl lactate.
上記の通り調整したレジスト樹脂組成物をシリコンウェ
ハー上に約ｌ−厚にスピンコードし、９０°Ｃのホット
プレート上で９０秒プリベークを行なった。The resist resin composition prepared as described above was spin-coded onto a silicon wafer to a thickness of about 1, and prebaked for 90 seconds on a hot plate at 90°C.
次いで１ ｋｇ ／ ｃｌｉＩの）ＩＭ［ｌＳガス中で
ウェハーを１２０°Ｃに加熱しながら５分間のＨＭＤＳ
処理を行ない、レジストを全面シリル化した。Then 1 kg/cliI) IM [HMDS for 5 min while heating the wafer to 120 °C in S gas
The entire surface of the resist was silylated.
次いで、縮小投影露光装置Ｎ５Ｒ−４６＾にてパターン
を転写した。Next, the pattern was transferred using a reduction projection exposure apparatus N5R-46^.
その後０！−ＲＩＥを行ないレジストパターンを得た。Then 0! - RIE was performed to obtain a resist pattern.
その結果、０．３５ｍのシャープな微細ポジ形パターン
を形成することができた。As a result, a sharp fine positive pattern of 0.35 m could be formed.
裏施班）
本発明方法におけるレジスト材料を構成する、■ノボラ
ック樹脂としてｍ−クレゾール／ｐ−クレゾールの共縮
合物（Ｍ、−約７０００） １００ ｇ■露先による酸
発生剤として、４．４′−ジターシ中リブチルジフェニ
ルヨードニウムクロロホスフェイト、５ｇ（約４．７賀
ｔ％）を用いて３００ｇの乳酸エチルに溶解した。上記
の通り調整したレジスト材料をシリコンウェハー上に約
１趨厚′にスピンコードし、９０°Ｃのホットプレート
上で９０秒でプリベークを行なった。次いで１ｋｇ／ｄ
のＨＭＤＳガス中でウェハーを１２０°Ｃに加熱しなが
ら５分間のＨＭＤＳ処理を行ない、レジストを全面シリ
ル化した。そして縮小投影露光装置Ｎ５Ｒ−ｉ６Ａにて
パターンを転写した。100 g of m-cresol/p-cresol co-condensate (M, -about 7000) constituting the resist material in the method of the present invention; 100 g of m-cresol/p-cresol co-condensate (M, -about 7000); 4.4 as an acid generator using the dew point. 5 g (approximately 4.7 t%) of butyl diphenyl iodonium chlorophosphate in ditarsic acid was dissolved in 300 g of ethyl lactate. The resist material prepared as described above was spin-coded onto a silicon wafer to a thickness of about 1 inch, and prebaked on a hot plate at 90° C. for 90 seconds. Then 1kg/d
While heating the wafer to 120° C. in HMDS gas, HMDS treatment was performed for 5 minutes to silylate the entire resist. The pattern was then transferred using a reduction projection exposure apparatus N5R-i6A.
その後０ｔ−ＲＩＥを行ないレジストパターンを得た。Thereafter, 0t-RIE was performed to obtain a resist pattern.
その結果、０．３５−のシャープな微細ポジ形パターン
を形成することができた。As a result, it was possible to form a fine positive pattern with a sharpness of 0.35.
以上説明したように本発明は構成されるものであるから
、シャープな微細ポジ形パターンの形成が可能となる。Since the present invention is configured as described above, it is possible to form a sharp fine positive pattern.
更に三層レジストプロセスと比較して工程数が少なくな
くなり、半導体の高集積化及び低コスト化を図ることが
可能となる。Furthermore, compared to the three-layer resist process, the number of steps is less, making it possible to achieve higher integration and lower costs of semiconductors.
第１図は本発明方法の一実施例を説明する工程図である
。
第２図は、従来方法の一実施例を示す工程図である。
１・・・半導体基板、 ６・・・樹脂組成物、７・
・・シリル化された樹脂、
８・・・プロトン。
本願方法の一実施例を示す工程図
第１図FIG. 1 is a process diagram illustrating an embodiment of the method of the present invention. FIG. 2 is a process diagram showing an example of a conventional method. 1... Semiconductor substrate, 6... Resin composition, 7.
...Silylated resin, 8...Proton. Figure 1 is a process diagram showing an example of the present method.
Claims (1)
クし、プリベーク後の前記樹脂をシリル化剤を用いてシ
リル化し、次いで露光し、更に異方性エッチングを行な
いポジ形レジストパターンを形成することを特徴とする
レジストパターンの形成方法。1. Applying a silylation resin composition onto a substrate, prebaking, silylating the prebaked resin using a silylation agent, then exposing to light, and further performing anisotropic etching to form a positive resist pattern. A method for forming a resist pattern, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1292220A JP2815024B2 (en) | 1989-11-13 | 1989-11-13 | Method of forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1292220A JP2815024B2 (en) | 1989-11-13 | 1989-11-13 | Method of forming resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03154062A true JPH03154062A (en) | 1991-07-02 |
| JP2815024B2 JP2815024B2 (en) | 1998-10-27 |
Family
ID=17779063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1292220A Expired - Fee Related JP2815024B2 (en) | 1989-11-13 | 1989-11-13 | Method of forming resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2815024B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280061A (en) * | 1990-03-29 | 1991-12-11 | Hoya Corp | Formation of resist pattern |
| JP2003098669A (en) * | 2001-09-20 | 2003-04-04 | Sumitomo Bakelite Co Ltd | Photoresist composition |
| WO2020050035A1 (en) * | 2018-09-05 | 2020-03-12 | 東京エレクトロン株式会社 | Method for producing resist film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211144A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
| JPS5891632A (en) * | 1981-11-27 | 1983-05-31 | Oki Electric Ind Co Ltd | Formation of microscopic pattern |
| JPS6324248A (en) * | 1986-05-08 | 1988-02-01 | ウ セ ベ ソシエテ アノニム | Formation of positive pattern in photoresist layer |
| JPS6396655A (en) * | 1986-10-14 | 1988-04-27 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPH01186935A (en) * | 1988-01-21 | 1989-07-26 | Toshiba Corp | Pattern forming method |
| JPH02140749A (en) * | 1988-11-22 | 1990-05-30 | Mitsubishi Electric Corp | Fine pattern forming method |
-
1989
- 1989-11-13 JP JP1292220A patent/JP2815024B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211144A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
| JPS5891632A (en) * | 1981-11-27 | 1983-05-31 | Oki Electric Ind Co Ltd | Formation of microscopic pattern |
| JPS6324248A (en) * | 1986-05-08 | 1988-02-01 | ウ セ ベ ソシエテ アノニム | Formation of positive pattern in photoresist layer |
| JPS6396655A (en) * | 1986-10-14 | 1988-04-27 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPH01186935A (en) * | 1988-01-21 | 1989-07-26 | Toshiba Corp | Pattern forming method |
| JPH02140749A (en) * | 1988-11-22 | 1990-05-30 | Mitsubishi Electric Corp | Fine pattern forming method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280061A (en) * | 1990-03-29 | 1991-12-11 | Hoya Corp | Formation of resist pattern |
| JP2003098669A (en) * | 2001-09-20 | 2003-04-04 | Sumitomo Bakelite Co Ltd | Photoresist composition |
| WO2020050035A1 (en) * | 2018-09-05 | 2020-03-12 | 東京エレクトロン株式会社 | Method for producing resist film |
| JP2020038320A (en) * | 2018-09-05 | 2020-03-12 | 東京エレクトロン株式会社 | Method for producing resist film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2815024B2 (en) | 1998-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5858620A (en) | Semiconductor device and method for manufacturing the same | |
| US5401614A (en) | Mid and deep-UV antireflection coatings and methods for use thereof | |
| US4378383A (en) | Method of making conductive paths through a lamina in a semiconductor device | |
| JPS61284924A (en) | Formation of etching resisting film | |
| US4007047A (en) | Modified processing of positive photoresists | |
| JPH04234706A (en) | Filter, manufacture thereof and solid-state image device using said filter | |
| JPH0456979B2 (en) | ||
| TW201301344A (en) | Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same | |
| US20070178404A1 (en) | Methods of preventing defects in antireflective coatings | |
| JPH03154062A (en) | Formation of resist pattern | |
| US5512334A (en) | Method for the production of a bottom resist | |
| JPH1195418A (en) | Photoresist film and pattern forming method | |
| JP3529671B2 (en) | Pattern forming method and semiconductor device using the same | |
| JPS59184337A (en) | Photosensitive heat resistant material | |
| JPH0334053B2 (en) | ||
| Redd et al. | Lithographic process for high-resolution metal lift-off | |
| JPH03154058A (en) | Resin composition for silylation and formation of resist pattern by using the same | |
| JPH0564338B2 (en) | ||
| JPS62138843A (en) | Composite resist structural body | |
| JPH02181910A (en) | Formation of resist pattern | |
| JPS58214149A (en) | Formation of micropattern | |
| JPS6392021A (en) | Heat stabilization of positive type photoresist pattern | |
| JPH034899B2 (en) | ||
| JPH0458170B2 (en) | ||
| JPH02143254A (en) | Precise pattern forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |