JPH03150844A - Treating method for cadmium telluride substrate - Google Patents
Treating method for cadmium telluride substrateInfo
- Publication number
- JPH03150844A JPH03150844A JP28882289A JP28882289A JPH03150844A JP H03150844 A JPH03150844 A JP H03150844A JP 28882289 A JP28882289 A JP 28882289A JP 28882289 A JP28882289 A JP 28882289A JP H03150844 A JPH03150844 A JP H03150844A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gallium
- cadmium telluride
- rear surface
- hydrochloric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 7
- 239000011733 molybdenum Substances 0.000 abstract description 7
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 6
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052753 mercury Inorganic materials 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はテルル化カドミウム系基板の処理方法に関し、
さらに詳しくは支持台上にガリウムで固定されたテルル
化カドミウム系基板を取り外す方法に関するものである
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for processing a cadmium telluride-based substrate,
More specifically, the present invention relates to a method for removing a cadmium telluride substrate fixed with gallium on a support.
［従来の技術］
テルル化カドミウム系基板上にテルル化水銀カドミウム
薄膜のような薄膜を成長させる場合、通常テルル化カド
ミウム系基板は第２図に示すように、モリブデンの支持
台１上に熱接触を取るためにガリウム２を介して貼り付
けている。[Prior Art] When growing a thin film such as a mercury-cadmium telluride thin film on a cadmium telluride substrate, the cadmium telluride substrate is usually placed in thermal contact with a molybdenum support 1, as shown in FIG. It is pasted through gallium 2 to remove it.
このような支持台１上に貼り付けられたテルル化カドミ
ウム系基板３の表面上にテルル化水銀カドミウム薄膜４
を成長後、従来は支持台１から取り外すために、以下の
３つの手順を実施していた。A mercury cadmium telluride thin film 4 is formed on the surface of the cadmium telluride-based substrate 3 attached to such a support 1.
Conventionally, the following three steps have been performed to remove the growth from the support base 1.
即ち、第１段階ではモリブデンの支持台１を加熱器５で
加熱し、ガリウムの融点（２９，７５℃）より少し高め
にして固体になっているガリウム２を溶かし、基板が支
持台から取り外せるようにする。That is, in the first step, the molybdenum support 1 is heated with a heater 5 to a temperature slightly higher than the melting point of gallium (29.75°C) to melt the solid gallium 2, so that the substrate can be removed from the support. Make it.
次いで第２段階では基板をピンセットで支持台１から取
り外し、第３図のようなガリウムの融点より少し高めに
加熱された基板裏面清浄用治具８上にガリウム２の付着
している基板３の裏面を上向きに載せる。最後に、メチ
ルアルコールを含ませた綿棒で基板裏面についているガ
リウム２を拭き取る。このような手順でテルル化カドミ
ウム系基板の取り外しと基板裏面の清浄化を行っていた
。Next, in the second step, the substrate is removed from the support stand 1 with tweezers, and the substrate 3 with gallium 2 attached is placed on a substrate backside cleaning jig 8 heated to a temperature slightly higher than the melting point of gallium as shown in FIG. Place the back side up. Finally, use a cotton swab soaked in methyl alcohol to wipe off the gallium 2 on the back of the substrate. This procedure was used to remove the cadmium telluride substrate and clean the back surface of the substrate.
［発明が解決しようとする課題］
しかしながら、上記の方法において、テルル化カドミウ
ム系基板をモリブデン支持台から取り外してから、第３
図に示すような基板裏面清浄用治具に基板裏面を上にし
て載せると、基板表面の一部が傷つくという問題があっ
た。また、綿棒によりガリウムを拭き取っても基板裏面
に染み込んだガリウムが残っていて、これを取り除くこ
とが困難であった。[Problems to be Solved by the Invention] However, in the above method, after the cadmium telluride-based substrate is removed from the molybdenum support base, the third
When a substrate is placed with its back surface facing up on a jig for cleaning the back surface of a substrate as shown in the figure, there is a problem in that a part of the surface of the substrate is damaged. Further, even if the gallium was wiped off with a cotton swab, the gallium soaked into the back surface of the substrate remained, making it difficult to remove it.
本発明は、以上述べたような従来の問題点を解決するた
めになされたもので、基板表面を傷つけることなく基板
裏面のガリウムを完全に除去できるテルル化カドミウム
系基板の処理方法を提供することを目的とする。The present invention has been made in order to solve the conventional problems as described above, and provides a method for processing a cadmium telluride-based substrate that can completely remove gallium on the back surface of the substrate without damaging the surface of the substrate. With the goal.
［課題を解決するための手段］
本発明は、ガリウムを介して支持台に固定した薄膜成長
後のテルル化カドミウム系基板を、ガリウムの融点以上
で、かつ成長薄膜が変性しない温度にまで加熱した塩酸
中に支持台ごと浸し、該支持台からテルル化カドミウム
系基板を取り外すと共に、基板裏面を清浄化することを
特徴とするテルル化カドミウム系基板の処理方法である
。[Means for Solving the Problems] The present invention involves heating a cadmium telluride-based substrate fixed to a support via gallium after thin film growth to a temperature equal to or higher than the melting point of gallium and at which the grown thin film does not denature. This is a method for processing a cadmium telluride substrate, which is characterized by immersing the support together with the support in hydrochloric acid, removing the cadmium telluride substrate from the support, and cleaning the back surface of the substrate.
［作用］
テルル化カドミウム系基板を支持台ごとガリウムの融点
より少し高めの温度に設定した塩酸中に浸すと、基板と
支持台の間にあるガリウムは融点以上になり、溶融して
粒状になり、テルル化カドミウム系基板を支持台から容
易に取り外すことができる。またそれと同時に、基板上
に残ったガリウムは塩酸との化学反応で溶解し、基板裏
面の洗浄が行われる。[Operation] When a cadmium telluride-based substrate is immersed together with the support in hydrochloric acid set at a temperature slightly higher than the melting point of gallium, the gallium between the substrate and the support reaches a temperature above its melting point and melts into particles. , the cadmium telluride-based substrate can be easily removed from the support base. At the same time, the gallium remaining on the substrate is dissolved by a chemical reaction with hydrochloric acid, and the back surface of the substrate is cleaned.
ざらに、塩酸の温度は成長薄膜が変性しない温度、例え
ば成長薄膜がテルル化水銀カドミウムであれば、水銀が
蒸発しない５０°Ｃ付近の温度に設定することにより、
成長薄膜が影響をうけることはなく、またテルル化カド
ミウム系基板も塩酸と反応して溶けることはない。Roughly speaking, the temperature of hydrochloric acid should be set at a temperature at which the grown thin film does not denature; for example, if the grown thin film is mercury cadmium telluride, the temperature of the hydrochloric acid should be set at around 50°C at which the mercury does not evaporate.
The grown thin film is not affected, and the cadmium telluride-based substrate does not react with hydrochloric acid and dissolve.
［実施例］
以下、本発明の実施例について図面を参照して説明する
。[Examples] Examples of the present invention will be described below with reference to the drawings.
第１図は本発明の方法の一実施例を示す説明図である。FIG. 1 is an explanatory diagram showing an embodiment of the method of the present invention.
第１図のように、テルル化カドミウム系基板３がガリウ
ム２によって貼り付けられたモリブデン製の支持台１を
ガリウム２の融点より高く、かつ基板３上に成長させた
テルル化水銀カドミウム薄膜４から水銀が蒸発しない５
０’Ｃ付近の温度に加熱した塩酸７中に浸すと、ガリウ
ム２は融点以上の温度のため固体から液体になり、それ
と同時に塩酸７との化学反応でガリウム２は溶解するた
め、基板３は支持台１から数秒で剥離した。また、塩酸
との化学反応により、基板裏面に付いたガリウムもきれ
いに溶け、基板裏面の洗浄効果もある。この過程におい
て、モリブデンの支持台とテルル化カドミウム系基板は
塩酸と反応して溶けることはない。As shown in FIG. 1, a molybdenum support 1 on which a cadmium telluride-based substrate 3 is bonded with gallium 2 is attached to a mercury cadmium telluride thin film 4 grown at a temperature higher than the melting point of gallium 2 and on the substrate 3. Mercury does not evaporate5
When immersed in hydrochloric acid 7 heated to a temperature around 0'C, gallium 2 changes from solid to liquid because the temperature is above its melting point, and at the same time gallium 2 dissolves due to a chemical reaction with hydrochloric acid 7, so the substrate 3 It was peeled off from the support base 1 in a few seconds. In addition, due to the chemical reaction with hydrochloric acid, gallium attached to the backside of the substrate is dissolved neatly, which also has the effect of cleaning the backside of the substrate. In this process, the molybdenum support and the cadmium telluride substrate do not react with hydrochloric acid and dissolve.
［発明の効果］
以上詳述したように、本発明の方法によれば、基板を数
秒で支持台から剥離することができ、基板裏面もガリウ
ムから完全に清浄化されると共に、基板表面に接触する
ことがないので表面を傷つけずに安全に支持台から取り
外すことが可能である。[Effects of the Invention] As detailed above, according to the method of the present invention, the substrate can be peeled off from the support in a few seconds, the back side of the substrate is also completely cleaned from gallium, and the back side of the substrate is completely cleaned from gallium, and the surface of the substrate is not contacted. It can be safely removed from the support without damaging the surface.
従って、従来よりもテルル化カドミウム系基板の取り外
し作業が簡便になり、作業にかかる工数を削減すること
ができる。Therefore, the work of removing the cadmium telluride-based substrate becomes easier than before, and the number of man-hours required for the work can be reduced.
第１図は本発明の方法の一実施例を示す説明図、第２図
は従来例による基板の取り外し方法を示す説明図、第３
図は従来例による基板裏面の清浄化方法を示す説明図で
ある。
１・・・モリブデン支持台
２・・・ガリウム
３・・・テルル化カドミウム系基板
４・・・テルル化水銀カドミウム薄膜
５・・・加熱器
６・・・ビーカー
７・・・塩酸
８・・・基板裏面清浄用治具FIG. 1 is an explanatory diagram showing one embodiment of the method of the present invention, FIG. 2 is an explanatory diagram showing a conventional method for removing a board, and FIG.
The figure is an explanatory diagram showing a conventional method for cleaning the back surface of a substrate. 1... Molybdenum support base 2... Gallium 3... Cadmium telluride based substrate 4... Mercury cadmium telluride thin film 5... Heater 6... Beaker 7... Hydrochloric acid 8... Jig for cleaning the back side of the board
Claims (1)
テルル化カドミウム系基板を、ガリウムの融点以上で、
かつ成長薄膜が変性しない温度にまで加熱した塩酸中に
支持台ごと浸し、該支持台からテルル化カドミウム系基
板を取り外すと共に、基板裏面を清浄化することを特徴
とするテルル化カドミウム系基板の処理方法。(1) A cadmium telluride-based substrate after thin film growth fixed to a support via gallium is heated above the melting point of gallium,
A treatment for a cadmium telluride-based substrate, which is characterized by immersing the supporting stand together in hydrochloric acid heated to a temperature at which the grown thin film does not denature, removing the cadmium telluride-based substrate from the supporting stand, and cleaning the back surface of the substrate. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28882289A JPH03150844A (en) | 1989-11-08 | 1989-11-08 | Treating method for cadmium telluride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28882289A JPH03150844A (en) | 1989-11-08 | 1989-11-08 | Treating method for cadmium telluride substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03150844A true JPH03150844A (en) | 1991-06-27 |
Family
ID=17735188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28882289A Pending JPH03150844A (en) | 1989-11-08 | 1989-11-08 | Treating method for cadmium telluride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03150844A (en) |
-
1989
- 1989-11-08 JP JP28882289A patent/JPH03150844A/en active Pending
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