JPH0314771B2 - - Google Patents
Info
- Publication number
- JPH0314771B2 JPH0314771B2 JP17133684A JP17133684A JPH0314771B2 JP H0314771 B2 JPH0314771 B2 JP H0314771B2 JP 17133684 A JP17133684 A JP 17133684A JP 17133684 A JP17133684 A JP 17133684A JP H0314771 B2 JPH0314771 B2 JP H0314771B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- frequency induction
- melting chamber
- rod
- induction heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 116
- 239000010703 silicon Substances 0.000 claims description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 115
- 238000002844 melting Methods 0.000 claims description 34
- 230000008018 melting Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 238000000465 moulding Methods 0.000 claims description 25
- 230000006698 induction Effects 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】
『産業上の利用分野』
本発明は多結晶シリコンウエハを製造する際の
溶融シリコン供給方法とその装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for supplying molten silicon when manufacturing polycrystalline silicon wafers.
『従来の技術』
太陽電池、その他の光電子変換素子などに用い
られる他結晶シリコンウエハは、シリコンインゴ
ツトをスライスするスライス法のほか、既知のリ
ボン法、キヤステイング法（鋳造法）等により製
造されていたが、スライス法の場合はスライス時
の材料ロス率が約50％と高く、量産にも適しない
問題があり、リボン法、キヤステイング法の場合
は大型の太陽電池素材が得られず、特にキヤステ
イング法では大きなシリコン結晶粒が得られない
ことにより、太陽電池の光電変換率が２〜３％と
極度に低下していた。``Prior Art'' Polycrystalline silicon wafers used in solar cells and other photoelectronic conversion devices are manufactured by the slicing method of slicing silicon ingots, as well as the known ribbon method, casting method, etc. However, the slicing method has a high material loss rate of approximately 50% during slicing, making it unsuitable for mass production.The ribbon method and casting method do not allow large-sized solar cell materials to be obtained. In particular, since large silicon crystal grains cannot be obtained using the casting method, the photoelectric conversion rate of the solar cell is extremely low to 2 to 3%.
かかる問題点を解決するためスピン法と称する
多結晶シリコンウエハの製造方法が提案されてい
る。 In order to solve this problem, a method of manufacturing polycrystalline silicon wafers called a spin method has been proposed.
スピン法は、溶融シリコンを回転状態にあるシ
リコン成形器（製造皿）内に入れ、遠心力を利用
してシリコンウエハを成形する方法であり、この
スピン法によるとき、特性のよい多結晶シリコン
ウエハが量産できるとされたが、当該方法の場合
もつぎに指摘する問題が残されている。 The spin method is a method in which molten silicon is placed in a rotating silicon molder (manufacturing dish) and silicon wafers are molded using centrifugal force.When this spin method is used, polycrystalline silicon wafers with good properties are Although it was said that this method could be mass-produced, the following problems still remain with this method.
その問題点の１つとして、上記スピン法では石
英ルツボ内にて原料シリコンを溶融し、その溶融
シリコンを石英ルツボから石英ロートへ、さらに
石英ロートから成形器内へと供給しているが、こ
れらルツボ、ロート上の構成材料である石英：
SiO2がSiOとなつて溶融シリコン中に溶けこむた
めシリコンの純度が低下する。 One of the problems is that in the spin method described above, raw silicon is melted in a quartz crucible, and the molten silicon is supplied from the quartz crucible to a quartz funnel, and then from the quartz funnel to a molding machine. Quartz, the constituent material on the crucible and funnel:
SiO 2 becomes SiO and dissolves into molten silicon, reducing the purity of the silicon.
他の問題点として、石英ルツボ、石英ロートな
どはその取り扱い上、これかの外側をカーボン製
の支持壁により覆うのが一般であるが、こうした
場合、高温下における上記石英：SiO2がカーボ
ン製支持壁のＣにより分解されてSi＋COとなり、
これにより発生した一酸化炭素が溶融シリコン中
に溶けこむため、そのシリコン中のカーボン濃度
が高くなる。 Another problem is that quartz crucibles, quartz funnels, etc. are generally covered with a support wall made of carbon on the outside for handling purposes. It is decomposed by C in the supporting wall and becomes Si + CO.
As the carbon monoxide generated thereby dissolves into the molten silicon, the carbon concentration in the silicon increases.
特にルツボの場合、ロートよりも高温に曝され
るので、当該ルツボから溶融シリコンへ混入する
不純物の量が多くなる。 In particular, in the case of a crucible, since it is exposed to a higher temperature than a funnel, the amount of impurities mixed into molten silicon from the crucible increases.
『発明が解決しようとする問題点』
本発明は上記の問題点に解決すべくシリコン純
度を低下させる原因をできるだけ排除し、これに
より不純物混入量の少ない溶融シリコンが供給で
きる方法と装置を提供しようとするものである。``Problems to be Solved by the Invention'' In order to solve the above-mentioned problems, the present invention aims to eliminate as much as possible the causes of decreasing silicon purity, thereby providing a method and apparatus that can supply molten silicon with a small amount of impurities. That is.
『問題を解決するための手段』
本発明に係る方法は、上部にシリコン導入部が
設けられ、内部に高周波誘導加熱手段とシリコン
成形手段とが備えられた溶融室内を不活性ガス雰
囲気とし、該溶融室内にはシリコン導入部からシ
リコンロツドを導入し、その下端を所定長だけ高
周波誘導加熱手段で加熱溶融することにより、当
該シリコンロツドの下端に所要量のシリコン融液
粒を形成し、その融液粒を滴下してシリコン成形
手段へ供給することを特徴としている。"Means for Solving the Problem" The method according to the present invention provides an inert gas atmosphere in a melting chamber which is provided with a silicon introduction section at the top and is equipped with a high frequency induction heating means and a silicon molding means inside. A silicon rod is introduced into the melting chamber from the silicon introduction part, and its lower end is heated and melted by a high-frequency induction heating means for a predetermined length to form a required amount of silicon melt particles at the lower end of the silicon rod. It is characterized in that it is dripped and supplied to the silicon molding means.
本発明に係る装置は、筒状をなす高周波誘導加
熱器が上位、シリコン成形器が下位となる相対関
係を有してこれら高周波誘導加熱器、シリコン成
形器が溶融室内に配置され、溶融室の上部にはそ
の溶融室内の互いに連通して外溶融室上に立設さ
れた筒体と、その筒体の軸心線と交差して該筒体
の長手方向中間に設けられた開閉自在な仕切板
と、下端にシリコン把持部を有して上記筒体内に
上下動自在に挿入された操作棒と、その筒体にお
ける開放端と仕切板との間に形成されたガス交換
部室とからなるシリコン導入部が備えられ、高周
波誘導加熱器とシリコン導入部とがほぼ同一軸線
上に並んでいることを特徴としている。 In the apparatus according to the present invention, the high-frequency induction heater and the silicon molding machine are arranged in a melting chamber in a relative relationship such that the cylindrical high-frequency induction heater is on the upper side and the silicon molding machine is on the lower side. The upper part includes a cylinder that communicates with each other in the melting chamber and stands upright on the outer melting chamber, and a partition that can be freely opened and closed and intersects the axis of the cylinder and is provided at the longitudinal center of the cylinder. A silicon plate, an operating rod having a silicon grip at the lower end and inserted into the cylinder so as to be able to move up and down, and a gas exchange chamber formed between the open end of the cylinder and a partition plate. The device is characterized in that it is equipped with an introduction section, and that the high-frequency induction heater and the silicon introduction section are arranged substantially on the same axis.
『作用』
本発明方法の場合、原料シリコンとしてシリコ
ンロツドを用い、そのシリコンロツドの下端所定
長を溶融室（Arなどの不活性ガス雰囲気）内で
高周波誘導加熱手段により加熱溶融して該ロツド
下端に所要量のシリコン融液粒を形成し、そのシ
リコン融液粒をシリコン成形手段へ滴下供給する
から、石英ルツボ等を用いることなく溶融シリコ
ンの供給が行なえ、しかも不純物混入の大きな原
因である石英ルツボがないことにより、シリコン
成形手段へ供給する溶融シリコンの純度を十分に
高めることができる。``Operation'' In the case of the method of the present invention, a silicon rod is used as the raw material silicon, and a predetermined length of the lower end of the silicon rod is heated and melted by high-frequency induction heating means in a melting chamber (in an atmosphere of inert gas such as Ar) to form the desired amount of silicon rod at the lower end of the rod. Since the silicon melt particles are formed into large amounts of silicon melt particles, and the silicon melt particles are dripped and supplied to the silicon molding means, the molten silicon can be supplied without using a quartz crucible or the like. By not having any, the purity of the molten silicon supplied to the silicon molding means can be sufficiently increased.
しかもシリコン融液粒は、高周波誘導加熱手段
により加熱溶融されるシリコンロツド下端の長さ
を加減して任意の大きさに調整できるから、これ
により溶融シリコン供給量の制御性を確保するこ
とができる。 Furthermore, the silicon melt particles can be adjusted to any size by adjusting the length of the lower end of the silicon rod heated and melted by the high-frequency induction heating means, thereby ensuring controllability of the amount of molten silicon supplied.
その他、運転操作を必要とする石英ルツボが省
略できる分だけ操業が簡略となる。 In addition, the operation is simplified to the extent that a quartz crucible that requires operation can be omitted.
本発明装置の場合、溶融室の所定部にシリコン
導入部、筒状の高周波誘導加熱器、シリコン成形
器等が設備されているので、前述した方法が満足
に実施できるが、その他にも、操作棒の下端に取
りつけたシリコンロツドをシリコン導入部から溶
融室内へ導入するとき、溶融室内への外気侵入が
阻止できる。 In the case of the apparatus of the present invention, a silicon introduction part, a cylindrical high-frequency induction heater, a silicon molding machine, etc. are installed in a predetermined part of the melting chamber, so the above-mentioned method can be carried out satisfactorily. When the silicon rod attached to the lower end of the rod is introduced into the melting chamber from the silicon introduction part, outside air can be prevented from entering the melting chamber.
すなわち溶融室内の連通する筒体の長手方向中
間を仕切板により一たん閉鎖し、操作棒の下端に
取りつけたシリコンロツドをその仕切板の上位に
あるガス交換部室内に気密に挿入した後、該ガス
交換部室内を不活性ガスで置換し、ついで仕切板
を開放してシリコンロツドを溶融室へ導入するこ
とにより、当該溶融室内への外気侵入が阻止でき
る。 That is, the longitudinal middle of the communicating cylinder in the melting chamber is temporarily closed with a partition plate, and the silicon rod attached to the lower end of the operating rod is airtightly inserted into the gas exchange chamber above the partition plate, and then the gas is removed. By replacing the interior of the exchange chamber with an inert gas, then opening the partition plate and introducing the silicon rod into the melting chamber, it is possible to prevent outside air from entering the melting chamber.
しかも小容積であるガス交換部室内のガスを交
換するのみでよいから、この際の不活性ガス交換
量が少量で足りる。 Moreover, since it is only necessary to exchange the gas in the gas exchange chamber, which has a small volume, a small amount of inert gas exchange is sufficient at this time.
『実施例』
以下本発明に係る方法、装置の実施例につき、
図面を参照して説明する。“Examples” Below, examples of the method and apparatus according to the present invention will be described.
This will be explained with reference to the drawings.
図において、ステンレススチール製の壁材によ
り構成された溶融室１は外部と遮断された密閉構
造を有し、これには不活性ガスの供給系２が接続
されているとともにその内側にはカーボン製の断
熱材３が内装されている。 In the figure, a melting chamber 1 made of stainless steel wall material has a sealed structure that is isolated from the outside, and an inert gas supply system 2 is connected to it. A heat insulating material 3 is installed inside.
溶融室１の内部には、高周波誘導加熱器４とシ
リコン成形器５とが配置され、これらは高周波誘
導加熱器４が上位、シリコン成形器５が下位とな
る相対関係を有している。 Inside the melting chamber 1, a high frequency induction heater 4 and a silicon molding machine 5 are arranged, and these have a relative relationship such that the high frequency induction heater 4 is at the upper level and the silicon molding machine 5 is at the lower level.
高周波誘導加熱器４は、その主要部の形態が縦
方向の空心を有する略筒状となつており、これは
内部に冷媒（水）が通される銅パイプ製のコイル
６により構成されている。 The main part of the high-frequency induction heater 4 has a substantially cylindrical shape with a vertical air center, and this is made up of a coil 6 made of copper pipe through which a refrigerant (water) is passed. .
コイル６の両端は溶融室１の壁面に気密に貫通
してその溶融室１外へ引き出され、当該コイル６
の両端子間には高周波電源７が接続されるととも
に冷媒の供給系８、排出系９が接続される。 Both ends of the coil 6 hermetically penetrate the wall surface of the melting chamber 1 and are drawn out of the melting chamber 1.
A high frequency power source 7 is connected between both terminals, and a refrigerant supply system 8 and a discharge system 9 are also connected.
シリコン成形器（シリコン製造皿）５はその中
心から放射状に分岐した複数の流路を有し、各流
路先端に所定の成形空間が形成されている。 The silicon molding machine (silicon manufacturing tray) 5 has a plurality of channels branching radially from its center, and a predetermined molding space is formed at the tip of each channel.
シリコン成形器５は固定式の場合もあるが、既
述のスピン法では、これを回転させるべき当該シ
リコン成形器５がターンテーブル１０上に載置さ
れる。 Although the silicon molding machine 5 may be of a fixed type, in the spin method described above, the silicon molding machine 5 to be rotated is placed on the turntable 10.
前述した溶融室１の上部にはシリコン導入部１
１が設けられている。 In the upper part of the melting chamber 1 mentioned above, there is a silicon introduction part 1.
1 is provided.
このシリコン導入部１１は、ステンレススチー
ル製の筒体１２、該筒体１２と同材質の仕切板１
３、モリブデン製の操作棒１５等が主なる構成部
材となつている。 This silicon introduction part 11 includes a cylinder 12 made of stainless steel and a partition plate 1 made of the same material as the cylinder 12.
3. The operating rod 15 made of molybdenum is the main component.
筒体１２は溶融室１の上部に設けられた開口部
１６と相互に連結されて立設され、これにより溶
融室１内と互いに連通しているとともに筒体１２
の長手方向中間にはその軸心線と交差して摺動案
内部１７が設けられ、その摺動案内部１７には仕
切板１３が開閉自在に備えられる。 The cylindrical body 12 is erected and interconnected with an opening 16 provided at the upper part of the melting chamber 1, thereby communicating with the inside of the melting chamber 1 and the cylindrical body 12.
A sliding guide part 17 is provided in the longitudinal direction intermediate part thereof, intersecting the axis thereof, and a partition plate 13 is provided in the sliding guide part 17 so as to be openable and closable.
操作棒１５はその下端に凹溝１８とモリブデン
製のロツクピン１９とによるシリコン把持部を有
し、筒体１２内に上下動自在に挿入される。 The operating rod 15 has a silicon gripping portion formed by a groove 18 and a molybdenum locking pin 19 at its lower end, and is inserted into the cylinder 12 so as to be vertically movable.
上記筒体１２の開放端寄りの内周と仕切板１３
直上の内周には、操作棒１５の外周に密接するＯ
リング２０，２１がそれぞれ装着され、これによ
り筒体１２における開放端と仕切板１３との間に
はガス交換部室２２が形成され、かかるガス交換
部室２２にはガス供給系２３と排気系２４とが設
けられる。 The inner periphery of the cylindrical body 12 near the open end and the partition plate 13
On the inner periphery directly above, there is an O
Rings 20 and 21 are attached to each of them, thereby forming a gas exchange chamber 22 between the open end of the cylinder 12 and the partition plate 13, and a gas supply system 23, an exhaust system 24, and a gas exchange chamber 22. will be provided.
なお、操作棒１５の外周にはその長手方向に沿
い目盛２５が形成され、筒体１２の開放端寄りに
はその目盛２５を読みとるための透視部２６が形
成される。 Incidentally, a scale 25 is formed along the longitudinal direction on the outer periphery of the operating rod 15, and a see-through portion 26 for reading the scale 25 is formed near the open end of the cylinder 12.
図中、２７は溶融室１の上部に突設された筒状
の検視部であり、該検視部２７の端面は耐熱性の
透視フイルタ２８で閉鎖されている。 In the figure, 27 is a cylindrical inspection section projecting from the upper part of the melting chamber 1, and the end surface of the inspection section 27 is closed with a heat-resistant see-through filter 28.
２９はシリコンロツドであり、該ロツド２９の
上端には操作棒１５の凹溝１８の相互に嵌合する
凸起３０が形成されている。 29 is a silicon rod, and the upper end of the rod 29 is formed with a protrusion 30 that fits into the groove 18 of the operating rod 15.
上述した装置により、本発明方法を実施すると
き、シリコン導入部１１の筒体１２が仕切板１３
により閉鎖されている状態において、溶融室１内
には不活性ガスの供給系２から不活性ガス（Ar
など）が供給され、該溶融室１内はその不活性ガ
ス雰囲気に保持される。 When carrying out the method of the present invention using the above-mentioned apparatus, the cylindrical body 12 of the silicon introduction part 11 is connected to the partition plate 13.
When the melting chamber 1 is closed by the inert gas supply system 2, an inert gas (Ar
) is supplied, and the inside of the melting chamber 1 is maintained in an inert gas atmosphere.
シリコンロツド２９は凹溝１８と凸起３０とに
よる相対嵌合とこれらに差しこまれたロツクピン
１９とを介して操作棒１５の下端に取りつけられ
た後、上記筒体１２のガス交換部室内２２内へ挿
入されるが、この際、シリコンロツド２９はガス
交換部室２２のＯリング２０，２１と密に接触
し、そのガス交換部室２２内の気密性を保持す
る。 After the silicon rod 29 is attached to the lower end of the operating rod 15 through the relative fitting between the concave groove 18 and the protrusion 30 and the lock pin 19 inserted therein, the silicon rod 29 is inserted into the gas exchange chamber 22 of the cylinder body 12. At this time, the silicon rod 29 comes into close contact with the O-rings 20 and 21 of the gas exchange chamber 22 to maintain airtightness within the gas exchange chamber 22.
かかる状態において、ガス交換部室２２内を排
気系２４により真空抽きしてその内部にある空気
を排出した後、ガス供給系２３から該ガス交換部
室２２内に不活性ガス（Arなど）を充満させる。 In this state, the inside of the gas exchange chamber 22 is evacuated by the exhaust system 24 to exhaust the air therein, and then the gas exchange chamber 22 is filled with an inert gas (such as Ar) from the gas supply system 23. let
しかる後、筒体１２の下部が前記仕切板１３に
より開放され、シリコンロツド２９は操作棒１５
を介して溶融室１内へ導入される。 Thereafter, the lower part of the cylinder 12 is opened by the partition plate 13, and the silicon rod 29 is connected to the operating rod 15.
It is introduced into the melting chamber 1 through the.
溶融室１内では高周波電源７からコイル６に高
周波電流を流して高周波誘導加熱器４稼働させる
のであり、上述のごとく溶融室１内に導入された
シリコンロツド２９はその下端が高周波誘導加熱
器４内に挿入されて溶融され、当該下端に溶融粒
３１が形成される。 In the melting chamber 1, a high frequency current is passed from the high frequency power source 7 to the coil 6 to operate the high frequency induction heater 4, and as described above, the lower end of the silicon rod 29 introduced into the melting chamber 1 is connected to the inside of the high frequency induction heater 4. is inserted and melted, and molten grains 31 are formed at the lower end.
この際のシリコン溶融粒３１は、操作棒１５を
介して高周波誘導加熱器４内へのシリコンロツド
挿入深度を調整することにより任意の大きさに設
定でき、かかる調整は操作棒１５の目盛２５を筒
体１２の透視部２６から読みとることにより行な
われる。 At this time, the molten silicon particles 31 can be set to any size by adjusting the insertion depth of the silicon rod into the high-frequency induction heater 4 via the operating rod 15. This is done by reading from the transparent part 26 of the body 12.
上記においてシリコン溶融粒３１が自重に耐え
られない大きさに成長したとき、これがシリコン
成形器５内へ滴下され、以下、シリコンロツド２
９がほぼ完全に消費されるまで、シリコン溶融粒
３１の形成と滴下供給とが繰り返し行なわれる。 In the above process, when the silicon molten particles 31 grow to a size that cannot withstand their own weight, they are dropped into the silicon molding machine 5, and hereinafter, the silicon rods 2
The formation and dropwise supply of silicon molten grains 31 are repeated until the silicon molten grains 9 are almost completely consumed.
シリコンロツド２９が消費されたとき、操作棒
１５が筒体１２のガス交換部室２２内まで引き上
げられ、仕切板１３により一たん筒体下部が閉鎖
された後、当該操作棒１５がその筒体１２から引
き抜かれる。 When the silicon rod 29 is consumed, the operating rod 15 is pulled up into the gas exchange chamber 22 of the cylinder 12, and after the lower part of the cylinder is temporarily closed by the partition plate 13, the operating rod 15 is removed from the cylinder 12. It gets pulled out.
こうして抜きとられた操作棒１５の下端には前
記と同様にしてシリコンロツド２９が取りつけら
れ、そのシリコンロツド２９が前記と同様に溶融
室１内へ導入される。 The silicone rod 29 is attached to the lower end of the operating rod 15 thus extracted in the same manner as described above, and the silicone rod 29 is introduced into the melting chamber 1 in the same manner as described above.
なお、上述の実施例では高周波誘導加熱器４に
より溶融されたシリコンを直接シリコン成形器５
内へ滴下するようにしたが、これら加熱器４、成
形器５間に石英製などのロート３２を図中仮装線
で示すごとく介在させ、そのロート３２を経由し
て溶融シリコンをシリコン成形器４内へ供給する
ようにしてもよい。 In the above-described embodiment, the silicon melted by the high-frequency induction heater 4 is directly transferred to the silicon molder 5.
However, a funnel 32 made of quartz or the like is interposed between the heating device 4 and the molding device 5 as shown by the disguised line in the figure, and the molten silicon is passed through the funnel 32 into the silicon molding device 4. It may also be supplied inside.
本発明のより具体的な実施例として、スピン法
により0.5mm×10cm×10cmシリコンウエハを４枚
作製するとき、直径２cm、長さ50cmのシリコンロ
ツド２９を用いて前述した手段で当該ロツド２９
を溶融し、これをシリコン成形器５内へ供給する
とともに該成形器５内の溶融シリコンを急冷し、
固化した。 As a more specific embodiment of the present invention, when four silicon wafers of 0.5 mm x 10 cm x 10 cm are fabricated by the spin method, a silicon rod 29 with a diameter of 2 cm and a length of 50 cm is used.
is melted and supplied into the silicon molding machine 5, and the molten silicon in the molding machine 5 is rapidly cooled,
It solidified.
この際、高周波電源７として周波数2.3MHz、
出力20〓のものを用いた。 At this time, the frequency is 2.3MHz as the high frequency power source 7,
I used one with an output of 20〓.
４枚のシリコンウエハを作製するときのシリコ
ン量は約46ｇであり、この量は上記寸法のシリコ
ンロツド２９を数分間で約３cm溶融することで足
りた。 The amount of silicon needed to fabricate four silicon wafers was approximately 46 g, which was sufficient to melt approximately 3 cm of the silicon rod 29 of the above dimensions in several minutes.
この具体例での各シリコンウエハにつき、これ
らの酸素濃度、カーボン濃度をそれぞれ赤外分光
法で測定したところ、酸素濃度1ppm以下、カー
ボン濃度0.05ppmと期待した通りの好結果が確認
された。 When the oxygen concentration and carbon concentration of each silicon wafer in this specific example were measured by infrared spectroscopy, the expected good results were confirmed, with an oxygen concentration of 1 ppm or less and a carbon concentration of 0.05 ppm.
比較のため、従来のルツボ溶融法で得た溶融シ
リコンをシリコン成形器内へ供給して前記と同じ
スピン法を実施し、これにより得られたシリコン
ウエハの酸素濃度、カーボン濃度を上記と同じ測
定法で測定したところ、酸素濃度35ppm、カーボ
ン濃度2ppmであり、本発明の具体例をかなり下
回る結果となつた。 For comparison, molten silicon obtained by the conventional crucible melting method was fed into a silicon molding machine and the same spin method as above was performed, and the oxygen concentration and carbon concentration of the resulting silicon wafer were measured in the same manner as above. When measured by the method, the oxygen concentration was 35 ppm and the carbon concentration was 2 ppm, which were considerably lower than the specific examples of the present invention.
『発明の効果』
以上説明した通り、本発明方法によるときは、
不純物の混入を抑制してシリコンを溶融するので
シリコン成形手段へ供給する溶融シリコンの純度
を十分に高めることができ、しかも高周波誘導加
熱手段により加熱溶融されるシリコンロツド下端
の長さを加減して溶融シリコン供給量の制御性を
も確保することができる。"Effects of the Invention" As explained above, when using the method of the present invention,
Since the silicon is melted while suppressing the contamination of impurities, the purity of the molten silicon supplied to the silicon molding means can be sufficiently increased.Moreover, the length of the lower end of the silicon rod that is heated and melted by the high-frequency induction heating means can be adjusted to melt the silicon. Controllability of silicon supply amount can also be ensured.
本発明装置によるときは、上記方法が満足に実
施できるとともにシリコンロツドを溶融室へ導入
する際の取り扱い持など、当該溶融室内への外気
侵入が阻止でき、したがつて不純物の混入を防止
する対策がより確実となり、外気侵入阻止のため
の不活性ガス交換量が少量で足りるので、その保
守のための費用が節減できる。 When using the apparatus of the present invention, the above method can be carried out satisfactorily, and the intrusion of outside air into the melting chamber can be prevented, such as during handling when introducing the silicon rod into the melting chamber, and therefore measures can be taken to prevent contamination of impurities. It is more reliable, and only a small amount of inert gas needs to be exchanged to prevent outside air from entering, so maintenance costs can be reduced.
第１図は本発明方法ならびに装置の１実施例を
略示した説明図である。
１……溶融室、２……不活性ガスの供給系、４
……高周波誘導加熱器、５……シリコン成形器、
７……高周波電源、１１……シリコン導入部、１
２……筒体、１３……仕切板、１５……操作棒、
１８……シリコン把持部用凹溝、１９……シリコ
ン把持部用ロツクピン、２２……ガス交換部室、
２５……目盛、２６……透視部、２９……シリコ
ンロツド、３１……溶融粒、３２……ロート。
FIG. 1 is an explanatory diagram schematically showing one embodiment of the method and apparatus of the present invention. 1... Melting chamber, 2... Inert gas supply system, 4
...High frequency induction heater, 5...Silicon molding machine,
7...High frequency power supply, 11...Silicon introduction part, 1
2... Cylindrical body, 13... Partition plate, 15... Operation rod,
18...Concave groove for silicon gripping part, 19...Lock pin for silicon gripping part, 22...Gas exchange chamber,
25... Scale, 26... Transparent part, 29... Silicon rod, 31... Molten grain, 32... Funnel.
Claims (1)
周波誘導加熱手段とシリコン成形手段とが備えら
れた溶融室内を不活性ガス雰囲気とし、該溶融室
内にはシリコン導入部からシリコンロツドを導入
し、その下端を所定長だけ高周波誘導加熱手段で
加熱溶融することにより、当該シリコンロツドの
下端に所要量シリコン融液粒を形成し、その融液
粒を滴下してシリコン成形手段へ供給することを
特徴とする溶融シリコン供給方法。 ２ 筒状をなす高周波誘導加熱器が上位、シリコ
ン成形器が下位となる相対関係を有してこれら高
周波誘導加熱器、シリコン成形器が溶融室内に配
置され、溶融室の上部には、その溶融室内と互い
に連通して該溶融室上に立設された筒体と、その
筒体の軸心線と交差して該筒体の長手方向中間に
設けられた開閉自在な仕切板と、下端にシリコン
把持部を有して上記筒体内に上下動自在に挿入さ
れた操作棒と、その筒体における開放端と仕切板
との間に形成されたガス交換部室とからなるシリ
コン導入部が備えられ、高周波誘導加熱器とシリ
コン導入部とがほぼ同一軸線上に並んでいること
を特徴とする溶融シリコン供給装置。 ３ 高周波誘導加熱器の直下にシリコン成形器が
配置されている特許請求の範囲第２項記載の溶融
シリコン供給装置。 ４ 高周波誘導加熱器とシリコン成形器との間に
ロートが介在されている特許請求の範囲第２項記
載の溶融シリコン供給装置。 ５ 操作棒の外周にはその長手方向に沿い目盛が
形成され、筒体にはその目盛を読みとるための透
視部が形成されている特許請求の範囲第２項記載
の溶融シリコン供給装置。[Claims] 1. An inert gas atmosphere is created in a melting chamber which is provided with a silicon introduction section at the upper part and is equipped with a high frequency induction heating means and a silicon molding means inside, and a silicon rod is introduced into the melting chamber from the silicon introduction section. is introduced, and its lower end is heated and melted by a high-frequency induction heating means for a predetermined length to form a required amount of silicon melt particles at the lower end of the silicon rod, and the melt particles are dripped and supplied to the silicon molding means. A method for supplying molten silicon characterized by the following. 2 The high-frequency induction heater and the silicon molder are arranged in a melting chamber in a relative relationship, with the cylindrical high-frequency induction heater at the top and the silicon molder at the bottom. A cylindrical body that communicates with the chamber and stands upright on the melting chamber, a partition plate that can be freely opened and closed and that intersects the axial center line of the cylindrical body and is provided at the longitudinal center of the cylindrical body, and a partition plate that can be opened and closed at the lower end. A silicon introduction section is provided, which includes an operation rod having a silicon grip and inserted into the cylinder so as to be movable up and down, and a gas exchange chamber formed between the open end of the cylinder and a partition plate. , a molten silicon supply device characterized in that a high frequency induction heater and a silicon introducing section are arranged substantially on the same axis. 3. The molten silicon supply device according to claim 2, wherein a silicon molding machine is disposed directly below the high-frequency induction heater. 4. The molten silicon supply device according to claim 2, wherein a funnel is interposed between the high-frequency induction heater and the silicon molder. 5. The molten silicon supply device according to claim 2, wherein a scale is formed on the outer periphery of the operating rod along its longitudinal direction, and a see-through part for reading the scale is formed on the cylindrical body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17133684A JPS6148418A (en) | 1984-08-17 | 1984-08-17 | Process and device for feeding molten silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17133684A JPS6148418A (en) | 1984-08-17 | 1984-08-17 | Process and device for feeding molten silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6148418A JPS6148418A (en) | 1986-03-10 |
| JPH0314771B2 true JPH0314771B2 (en) | 1991-02-27 |
Family
ID=15921334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17133684A Granted JPS6148418A (en) | 1984-08-17 | 1984-08-17 | Process and device for feeding molten silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6148418A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60329343D1 (en) | 2002-02-26 | 2009-11-05 | Fujifilm Corp | Aluminum support for a planographic printing plate and process for its production, and a presensitized printing plate using the same |
-
1984
- 1984-08-17 JP JP17133684A patent/JPS6148418A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6148418A (en) | 1986-03-10 |
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