JPH0314221A - Developing device for semiconductor - Google Patents

Developing device for semiconductor

Info

Publication number
JPH0314221A
JPH0314221A JP15164089A JP15164089A JPH0314221A JP H0314221 A JPH0314221 A JP H0314221A JP 15164089 A JP15164089 A JP 15164089A JP 15164089 A JP15164089 A JP 15164089A JP H0314221 A JPH0314221 A JP H0314221A
Authority
JP
Japan
Prior art keywords
wafer
cup
developing
developing device
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15164089A
Other languages
Japanese (ja)
Inventor
Norihiro Nakajima
中嶋 教博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15164089A priority Critical patent/JPH0314221A/en
Publication of JPH0314221A publication Critical patent/JPH0314221A/en
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To make possible a reduction in a developing time, the annihilation of the tailing of a pattern due to an undeveloped residue and underdevelopment and the like by a method wherein a developing device is formed into a device provided with a vibrating plate, which is mounted to a means for mounting a wafer and at the same time, applies ultrasonic vibration to the wafer. CONSTITUTION:In a developing device, by which a developing solution is applied on the surface of a wafer 3 and a developing is performed in a process for forming a pattern in a semiconductor manufacturing process, the device is formed so as to have a vibrating plate 8, which is mounted to a means 5 for mounting the wafer 3 and at the same time, applies ultrasonic vibration to the wafer 3. For example, ultrasonic vibrators 9 and an ultrasonic vibrating plate 8 are mounted to the lower part of a developing solution cup 5 for housing and mounting a wafer 3. The wafer 3 is housed in the cup 5 to use the cup 5 as a container with its sealed bottom. In that state, a developing solution is discharged through a plurality of developing solution discharge nozzles 6 mounted on the side surfaces of the cup 5 to fill the cap 5 with the developing solution and in a state that the developing solution is applied on the whole wafer 3, proper vibration is applied to the plate 8 from the oscillators 9 to perform a developing.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体製造工程中のフォトリソグラフィープ
ロセスなどにおいて使用される半導体用現像装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor developing device used in a photolithography process in a semiconductor manufacturing process.

〔従来の技術〕[Conventional technology]

第3図(a)及び(b)は従来の半導体用現像装置の例
を示す断面図である。
FIGS. 3(a) and 3(b) are cross-sectional views showing an example of a conventional semiconductor developing device.

従来、この種の装置は、第3図(a)あるいは(b)に
示すように、ウェーハを搭載する搭載台を有している。
Conventionally, this type of apparatus has a mounting table on which a wafer is mounted, as shown in FIG. 3(a) or (b).

ここで、第3図(a)に示した現像装置は、デイツプ式
現像装置と吋はれている現像装置で、第ζ図(b)に示
した現像装置はパドル式現像装置と呼ばれるものである
Here, the developing device shown in FIG. 3(a) is different from a dip-type developing device, and the developing device shown in FIG. ζ(b) is called a paddle-type developing device. be.

第3図(a)のデイツプ式現像装置において、1は外囲
器としてのカップ、2はその中心部に位置するウェーハ
スピンチャック、3はウェーハ。
In the dip type developing apparatus shown in FIG. 3(a), 1 is a cup as an envelope, 2 is a wafer spin chuck located at the center thereof, and 3 is a wafer.

4は純水吐出ノズル、5は現像液カップ、6は現像液吐
出ノズル、7は裏面洗浄用カップである。
4 is a pure water discharge nozzle, 5 is a developer cup, 6 is a developer discharge nozzle, and 7 is a back side cleaning cup.

このデイツプ式現像装置は現像液カップ5の中にウェー
ハ3を収容することにより底面が密閉された容器とし、
その状態て現像液カップ5の側面にとりつけられた複数
の現像液吐出ノズル6より現像液を吐出し、現像液カッ
プ5を現像液で満たし、現像を行う。現像はウェーハ3
全体に現像液が盛られた状態で所定時間、静止あるいは
低速(例えは2Orpm)てウェーハ3を現像液カツプ
5ごと回転させて行い、その後、現像液カップ5が下降
し、次いでウェーハ3を回転さぜ、純水吐出ノズル4と
裏面洗浄用カップ7より純水が吐出され、ウェーハ3の
洗浄が行われる。
This dip-type developing device is a container with a sealed bottom by housing the wafer 3 in a developer cup 5.
In this state, the developer is discharged from a plurality of developer discharge nozzles 6 attached to the side surface of the developer cup 5 to fill the developer cup 5 with the developer and perform development. Development is on wafer 3
This is done by rotating the wafer 3 together with the developer cup 5 for a predetermined period of time, either stationary or at a low speed (for example, 2 Orpm) with the developer fully filled, and then the developer cup 5 is lowered and the wafer 3 is then rotated. Then, pure water is discharged from the pure water discharge nozzle 4 and the backside cleaning cup 7, and the wafer 3 is cleaned.

第3図(b)のパドル式現像装置は外囲器としてのカッ
プ1.ウェーハスピンチャック2.ウェーハ3.純水吐
出ノズル4.掃引する現像液吐出ノズル6a、裏面洗浄
用カップ7で構成される。
The paddle type developing device shown in FIG. 3(b) has a cup 1. Wafer spin chuck 2. Wafer 3. Pure water discharge nozzle 4. It is composed of a sweeping developer discharge nozzle 6a and a backside cleaning cup 7.

パドル式現像装置では、ウェーハ3をウェーハスピンチ
ャック2に載せた後、低速(例えば30r p m )
でウェーハ3を回転させなから、現像液吐出ノズル6を
掃引させながら現像液の吐出を行い、ウェーハ3全体に
現像液が盛られた状態て所定時間、ウェーハ3を低速(
例えば2Orpm)で回転させ、現像を行う。この後、
ウェーハ3を例えば300rpmで回転させ純水吐出ノ
ズル4と裏面洗浄カップ7から純水を吐出して、ウェー
ハ3を洗浄する。
In the paddle type developing device, after the wafer 3 is placed on the wafer spin chuck 2, it is operated at a low speed (for example, 30 rpm).
Without rotating the wafer 3, the developer is discharged while sweeping the developer discharge nozzle 6, and the wafer 3 is moved at a low speed (
For example, the image is developed by rotating at a rotation speed of 20 rpm. After this,
The wafer 3 is rotated at, for example, 300 rpm, and pure water is discharged from the pure water discharge nozzle 4 and the back surface cleaning cup 7 to clean the wafer 3.

〔発明が解決しようとする課題〕 上述した従来の半導体現像装置は、ウェーハ上に塗布、
露光された感光性有機膜と現像液の化学反応すなわち現
像は、ウェーハが静止あるいは低速(例えは20 r 
]:l m )て回転している状態て行われるので、以
下に示ず欠点がある。
[Problems to be Solved by the Invention] The conventional semiconductor developing apparatus described above does not perform coating on a wafer.
The chemical reaction between the exposed photosensitive organic film and the developer, that is, development, occurs when the wafer is stationary or at a low speed (for example, 20 r
]:l m ) and is rotated, so there are drawbacks that are not shown below.

(1)現像時間が一定時間以上必要である。(1) Development time is required to be longer than a certain period of time.

(2)現像が完全に行われず、パターンを形成する講の
底面に未反応物の残留や、現像不足によるパターンのす
そ引き等か発生する。
(2) Development is not completed completely, resulting in unreacted substances remaining on the bottom surface of the surface where the pattern is to be formed, and the pattern being trailed due to insufficient development.

本発明の目的は、かかる問題を解消する半導体用現像装
置を提供することである。
An object of the present invention is to provide a semiconductor developing device that solves this problem.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体用現像装置は、半導体製造工程における
パターンを形成する工程で、ウェーハ表面に現像液を盛
って現像を行う現像装置において、前記ウェーハを搭載
する手段に取付けられるとともに前記ウェーハに超音波
振動を与える振動板を有している。
The semiconductor developing device of the present invention is a developing device that performs development by applying a developer to the wafer surface in a pattern forming process in a semiconductor manufacturing process, and is attached to a means for mounting the wafer, and is attached to a means for mounting the wafer, and ultrasonic waves are applied to the wafer. It has a diaphragm that gives vibration.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。第1図
は本発明の一実施例を示す半導体用現像装置の断面図で
ある。この半導体用現像装置は、ウェーハ3を収納し搭
載する現像液カップ5の下部に超音波振動子9及び超音
波振動板8を取付けたことである。それ以外は従来例と
同じである。
Next, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view of a semiconductor developing device showing an embodiment of the present invention. This semiconductor developing apparatus has an ultrasonic vibrator 9 and an ultrasonic diaphragm 8 attached to the lower part of a developer cup 5 in which a wafer 3 is housed and mounted. Other than that, it is the same as the conventional example.

また、この半導体用現像装置においては、現像液カップ
5の中にウェーハ3を収容して底面が密閉された容器と
し、その状態で現像液カップ5の側面にとりつけられた
複数の現像液吐出ノズル6より現像液を吐出し、現像液
カップ5を現像液で満たし、ウェーハ3全体に現像液が
盛られた状態て発振子9から発振板8に適当な振動(例
えば、発振周波数850KHzの振動)を与えて現像を
行う。
Further, in this semiconductor developing device, the wafer 3 is housed in the developer cup 5 to form a container with a sealed bottom, and in this state, a plurality of developer discharge nozzles attached to the side surface of the developer cup 5 are installed. The developer is discharged from the oscillator 9, the developer cup 5 is filled with the developer, and the oscillator 9 sends an appropriate vibration to the oscillation plate 8 (for example, vibration with an oscillation frequency of 850 KHz) while the developer is filled over the entire wafer 3. is applied to develop the image.

この装置において、ウェーハ3を現像中に現像カップ5
ごと回転させない静止現像式や現像液カップ5ごと低速
(例えば2Orpm)で回転させることのできる回転現
像式の方式に限定することはない。
In this apparatus, the developing cup 5 is used while the wafer 3 is being developed.
The developer cup 5 is not limited to a static developing type in which the entire developer cup 5 is not rotated or a rotary developing type in which the entire developer cup 5 can be rotated at a low speed (for example, 2 rpm).

第2図は本発明の他の実施例を示す半導体用現像装置の
断面図である。この実施例は、パドル式現像装置に超音
波振動子9及び超音波振動板8を設けたものである。こ
の装置のウェーハスピンチャック2が低速て回転すると
き(100rpm)、ウェーハスピンチャック2の底部
に接触する回転可能な超音波発振板8と超音波発振子9
が作動し、ウェーハに超音波振動を与えながら現像を行
うものである。
FIG. 2 is a sectional view of a semiconductor developing device showing another embodiment of the present invention. In this embodiment, an ultrasonic vibrator 9 and an ultrasonic diaphragm 8 are provided in a paddle type developing device. When the wafer spin chuck 2 of this device rotates at low speed (100 rpm), a rotatable ultrasonic oscillator plate 8 and an ultrasonic oscillator 9 contact the bottom of the wafer spin chuck 2.
The wafer is developed while applying ultrasonic vibrations to the wafer.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明の現像装置で現像を行うこと
により、 (1)現像時間の短縮(現像反応の促進)(2)現像未
反応物の残留(いわゆるスカム)や現像不足によるパタ
ーンのすそ引きの消滅などのことができる効果かある。
As explained above, by performing development with the developing device of the present invention, (1) shortening of development time (promotion of development reaction), (2) reduction of pattern skirts due to residual unreacted materials (so-called scum) and insufficient development. It has an effect that can do things like eliminate pull.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す半導体用現像装置の縦
断面図、第2図は本発明の他の実施例を示す半導体用現
像装置の断面図、第3図は従来の半導体用現像装置の例
を示す断面図である。 トカツブ、2・・・ウェーハスピンチャック、3・・ウ
ェーハ、4・・・純水吐出ノズル、5・・現像液カップ
、6・・・現像液吐出ノズル、7・・裏面洗浄カップ、
8・・超音波振動板、9・・超音波発振子。
FIG. 1 is a longitudinal sectional view of a semiconductor developing device showing one embodiment of the present invention, FIG. 2 is a sectional view of a semiconductor developing device showing another embodiment of the present invention, and FIG. 3 is a conventional semiconductor developing device. FIG. 2 is a cross-sectional view showing an example of a developing device. Tokatsubu, 2... Wafer spin chuck, 3... Wafer, 4... Pure water discharge nozzle, 5... Developer cup, 6... Developer discharge nozzle, 7... Back side cleaning cup,
8... Ultrasonic diaphragm, 9... Ultrasonic oscillator.

Claims (1)

【特許請求の範囲】[Claims] 半導体製造工程におけるパターンを形成する工程で、ウ
ェーハ表面に現像液を盛って現像を行う現像装置におい
て、前記ウェーハを搭載する手段に取付けられるととも
に前記ウェーハに超音波振動を与える振動板を有するこ
とを特徴とする半導体用現像装置。
A developing device that performs development by applying a developer to the surface of a wafer in a pattern forming process in a semiconductor manufacturing process includes a diaphragm attached to a means for mounting the wafer and applying ultrasonic vibration to the wafer. Features of semiconductor development equipment.
JP15164089A 1989-06-13 1989-06-13 Developing device for semiconductor Pending JPH0314221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15164089A JPH0314221A (en) 1989-06-13 1989-06-13 Developing device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15164089A JPH0314221A (en) 1989-06-13 1989-06-13 Developing device for semiconductor

Publications (1)

Publication Number Publication Date
JPH0314221A true JPH0314221A (en) 1991-01-22

Family

ID=15522977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15164089A Pending JPH0314221A (en) 1989-06-13 1989-06-13 Developing device for semiconductor

Country Status (1)

Country Link
JP (1) JPH0314221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6766813B1 (en) * 2000-08-01 2004-07-27 Board Of Regents, The University Of Texas System Apparatus and method for cleaning a wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6766813B1 (en) * 2000-08-01 2004-07-27 Board Of Regents, The University Of Texas System Apparatus and method for cleaning a wafer

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