JPH0313721B2 - - Google Patents
Info
- Publication number
- JPH0313721B2 JPH0313721B2 JP10182082A JP10182082A JPH0313721B2 JP H0313721 B2 JPH0313721 B2 JP H0313721B2 JP 10182082 A JP10182082 A JP 10182082A JP 10182082 A JP10182082 A JP 10182082A JP H0313721 B2 JPH0313721 B2 JP H0313721B2
- Authority
- JP
- Japan
- Prior art keywords
- mosi
- ptc
- thick film
- paste
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910016006 MoSi Inorganic materials 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 239000002482 conductive additive Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明はガラスフリツトを必要としない厚膜型
正特性半導体素子の製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thick film type positive characteristic semiconductor device that does not require glass frit.
チタン酸バリウム系半導体素子からなる正特性
サーミススタ（以下PTCと称す）は、発熱温度
の自己制御機能を有し、外部の制御回路を必要と
しないため発熱体として広く利用されている。 A positive temperature coefficient thermistor (hereinafter referred to as PTC) made of a barium titanate-based semiconductor element has a self-control function of heat generation temperature and does not require an external control circuit, so it is widely used as a heat generating element.
従来のPTC発熱体はチタン酸バリウム系半導
体粉末を加圧成形した後焼成していたが、実用可
能な膜状のPTC発熱体を得ることは困難である
とされていた。 Conventional PTC heating elements were made by press-molding barium titanate-based semiconductor powder and then firing it, but it was considered difficult to obtain a practical film-like PTC heating element.
従来、PTCを膜状に加工する方法としては、
デイスク形に成形、焼成したものを薄片に研磨
するか、真空蒸着法により薄膜を形成するか、
またはPTC粉末に導電性の添加剤とガラスフ
リツトを加えてペースト状とし、スクリーン印
刷、焼成する方法などが知られている。 Conventionally, the method of processing PTC into a film is as follows:
Either molding and firing into a disk shape and polishing it into thin pieces, or forming a thin film using vacuum evaporation method.
Another known method is to add conductive additives and glass frit to PTC powder to form a paste, then screen print and bake it.
しかし、前記の方法ではPTCの結晶粒子径
が大きくてもろいため、膜状にまで研磨すること
は甚だ困難であり、また前記方法では操作が面
倒である。さらに、前記の方法では面積抵抗が
高くなり易く制御が困難であり、あらかじめガラ
スフリツトを調合、焼成しておかなければならず
面倒であり、かつガラスフリツトを加えるために
熱衝撃に弱く、熱伝導が悪いものになりがちであ
る。また、導電性の添加剤とガラスフリツトを均
一に混合することは困難であり、特性にばらつき
を生じる原因の一つとなつている。 However, in the above method, since the crystal grain size of PTC is large and brittle, it is extremely difficult to polish it into a film, and the above method is cumbersome to operate. Furthermore, in the above method, the sheet resistance tends to increase and is difficult to control, the glass frit must be prepared and fired in advance, which is troublesome, and since the glass frit is added, it is susceptible to thermal shock and has poor thermal conductivity. It tends to become a thing. Furthermore, it is difficult to uniformly mix the conductive additive and the glass frit, which is one of the causes of variations in properties.
本発明の目的は前述した従来技術の欠点である
製造上の繁雑さを解決し、ガラスフリツトを用い
ずに厚膜状とすることにより、熱衝撃性、熱伝導
性に優れ、かつばらつきの少ない特性を持つ厚膜
型正特性半導体素子を容易に製造できる方法を提
供することである。 The purpose of the present invention is to solve the above-mentioned drawback of the conventional technology, which is the complexity of manufacturing, and to achieve excellent thermal shock resistance, thermal conductivity, and less variation by forming a thick film without using glass frit. It is an object of the present invention to provide a method for easily manufacturing a thick film type positive characteristic semiconductor device having the following characteristics.
本発明はPTC粉末にMoSi2粉末を混合し、有
機溶剤を加えてペースト状にした混合物を基板上
に塗布して厚膜状にした後、焼成する厚膜型正特
性半導体素子の製造方法である。 The present invention is a method for manufacturing a thick-film type positive characteristic semiconductor element, in which a mixture of PTC powder and MoSi 2 powder is mixed and an organic solvent is added to make a paste, which is coated on a substrate to form a thick film, and then fired. be.
従来の導電性添加剤とガラスフリツトを用いる
方法では、PTC粉末同志の電気的接続のために
導電性添加剤が必要であり、PTC粉末同志を結
びつけ、厚膜状に固定するのにガラスフリツトが
必要であつた。 In the conventional method of using conductive additives and glass frits, conductive additives are required to electrically connect the PTC powders together, and glass frits are required to bind the PTC powders together and fix them in a thick film. It was hot.
本発明によれば導電性添加剤とガラスフリツト
の両方の役割をはたすものとしてMoSi2を用い
た。すなわち、MoSi2は常温では10-4〜10-5Ω−
cmの電気抵抗を示し導体である。しかし、1200℃
以上の高温になると一部分解してMoSi2の粒子表
面にSiO2が析出するが、粒子内部はMoSi2のまま
で表面のSiO2膜により酸化から保護される。 According to the present invention, MoSi 2 is used as both a conductive additive and a glass frit. In other words, MoSi 2 has a resistance of 10 -4 to 10 -5 Ω− at room temperature.
It is a conductor with an electrical resistance of cm. However, 1200℃
When the temperature exceeds the above temperature, it partially decomposes and SiO 2 is precipitated on the surface of the MoSi 2 particles, but the inside of the particles remains MoSi 2 and is protected from oxidation by the SiO 2 film on the surface.
従つて、PTC粉末とMoSi2を混合して焼成す
ると、MoSi2粒子の表面に析出するSiO2がガラス
フリツトと同じ役割をし、粒子内部のMoSi2が導
電性添加剤の役割をするため、MoSi2を添加する
だけでガラスフリツトを必要としない厚膜型正特
性半導体素子を得ることができるものである。 Therefore, when PTC powder and MoSi 2 are mixed and fired, the SiO 2 precipitated on the surface of the MoSi 2 particles plays the same role as glass frit, and the MoSi 2 inside the particles acts as a conductive additive. By simply adding 2 , it is possible to obtain a thick film type positive characteristic semiconductor device that does not require a glass frit.
また、MoSi2という導電性金属を添加すること
により、熱伝導性が悪いガラスフリツトを必要と
しないため熱伝導性が良くなり、熱衝撃性も向上
する。 Furthermore, by adding a conductive metal called MoSi 2 , there is no need for a glass frit with poor thermal conductivity, resulting in better thermal conductivity and improved thermal shock resistance.
なお、本発明においてPTC粉末としてはチタ
ン酸バリウムに各種の添加剤を加えて半導体化し
たものであればなんでもよく、MoSi2の添加量を
全重量に対して２〜50重量％と規定したのは２重
量％未満では面積抵抗が大きく、MoSi2が少なす
ぎてPTC粉末同志を結合、固定できない場合が
あり、また50重量％を超えると面積抵抗が小さく
なりすぎ、自己制御特性（PTC特性）が小さく
なる傾向が見られるためである。 In addition, in the present invention, the PTC powder may be any barium titanate as long as it is made into a semiconductor by adding various additives, and the amount of MoSi 2 added is specified as 2 to 50% by weight based on the total weight. If it is less than 2% by weight, the area resistance will be large, and if MoSi 2 is too small, it may not be possible to bond and fix the PTC powder together, and if it exceeds 50% by weight, the area resistance will be too small and the self-control characteristics (PTC characteristics) This is because there is a tendency for the value to decrease.
また、有機溶剤はPTC粉末とMoSi2をペース
ト状にしたり、その粘度を調整したりできるもの
であればなんでもよく、例えばα−テルピネオー
ルなどが用いられる。そして、ペースト状混合物
の塗布性を向上させるために有機結合剤を添加し
てもよい。 Further, any organic solvent may be used as long as it can make the PTC powder and MoSi 2 into a paste and adjust its viscosity. For example, α-terpineol can be used. An organic binder may also be added to improve the coating properties of the pasty mixture.
以上述べたように本発明においては、所定量の
PTC粉末と所定量のMoSi2を混合し、有機溶剤
を加えてペースト状とし、基板上に塗布して厚膜
状とし、これを焼成して厚膜型正特性半導体素子
が得られるものである。 As described above, in the present invention, a predetermined amount of
PTC powder and a predetermined amount of MoSi 2 are mixed, an organic solvent is added to form a paste, the paste is applied onto a substrate to form a thick film, and this is baked to obtain a thick film type positive characteristic semiconductor element. .
以下に本発明の実施例をあげて図面とともに具
体的に説明する。 Embodiments of the present invention will be specifically described below with reference to the drawings.
〈実施例〉
チタン酸バリウムに1.0モル％のSrOを加え、
1250℃で焼成した後粉砕してPTC粉末を得た。
このPTC粉末90重量％にMoSi210重量％を加え
均一に混合し、さらにα−テルピネオールを加え
てペースト状混合物１を作成した。<Example> Adding 1.0 mol% SrO to barium titanate,
PTC powder was obtained by firing at 1250°C and then pulverizing.
10% by weight of MoSi 2 was added to 90% by weight of this PTC powder and mixed uniformly, and α-terpineol was further added to prepare paste mixture 1.
一方、アルミナなどの基板２上にあらかじめ一
対のAgなどの電極３，３′を設けておき、その電
極３，３′上に上記ペースト状混合物１を印刷塗
布し、室温から10℃／mm昇温速度で1350℃まで昇
温し、30分間保持した後炉内放冷した。 On the other hand, a pair of electrodes 3, 3' made of Ag, etc. are provided in advance on a substrate 2 made of alumina, etc., and the above paste-like mixture 1 is applied by printing on the electrodes 3, 3', and the temperature is increased by 10°C/mm from room temperature. The temperature was raised to 1350°C at a rapid rate, held for 30 minutes, and then allowed to cool in the furnace.
こうして得た厚膜型半導体素子の室温での面積
抵抗は1.2KΩ／cm2であり、温度と抵抗値の関係は
第２図に示した通りであつた。なお、実施例では
スイツチング温度が160℃のもののみを示したが、
スイツチング温度は色々変化させられることが可
能である。 The sheet resistance of the thus obtained thick film semiconductor device at room temperature was 1.2 KΩ/cm 2 , and the relationship between temperature and resistance value was as shown in FIG. In addition, although only the switching temperature of 160°C was shown in the example,
The switching temperature can be varied.
以上述べたように本発明によれば、ガラスフリ
ツトなしで厚膜型正特性半導体素子が容易に得る
ことができ、その実用上の効果は大きいものであ
る。 As described above, according to the present invention, a thick film type positive characteristic semiconductor device can be easily obtained without glass frit, and its practical effects are great.
第１図は本発明製造法により得られた正特性半
導体素子の一実施例を示す斜視図、第２図は同正
特性半導体素子の温度と抵抗値の関係を示す図で
ある。
１……ペースト状混合物、２……基板、３，
３′……電極。
FIG. 1 is a perspective view showing an example of a positive characteristic semiconductor element obtained by the manufacturing method of the present invention, and FIG. 2 is a diagram showing the relationship between temperature and resistance value of the same positive characteristic semiconductor element. 1...Paste mixture, 2...Substrate, 3,
3'...electrode.
Claims (1)
を混合してなるペーストを基板上に厚膜状に塗布
した後、焼成してなることを特徴とする厚膜型正
特性半導体素子の製造方法。 ２ MoSi2の混合量が全重量に対して２〜50重量
％であることを特徴とする特許請求の範囲第１項
記載の厚膜型正特性半導体素子の製造方法。[Scope of Claims] 1. A thick-film type positive characteristic semiconductor characterized in that it is formed by applying a paste made by mixing barium titanate-based semiconductor powder and MoSi 2 powder onto a substrate in a thick film shape, and then firing the paste. Method of manufacturing elements. 2. The method for manufacturing a thick film type positive characteristic semiconductor device according to claim 1, wherein the amount of MoSi 2 mixed is 2 to 50% by weight based on the total weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10182082A JPS58218103A (en) | 1982-06-14 | 1982-06-14 | Method of producing thick film type positive temperature coefficient semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10182082A JPS58218103A (en) | 1982-06-14 | 1982-06-14 | Method of producing thick film type positive temperature coefficient semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58218103A JPS58218103A (en) | 1983-12-19 |
| JPH0313721B2 true JPH0313721B2 (en) | 1991-02-25 |
Family
ID=14310750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10182082A Granted JPS58218103A (en) | 1982-06-14 | 1982-06-14 | Method of producing thick film type positive temperature coefficient semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58218103A (en) |
-
1982
- 1982-06-14 JP JP10182082A patent/JPS58218103A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58218103A (en) | 1983-12-19 |
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