JPH0313578A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPH0313578A
JPH0313578A JP14732289A JP14732289A JPH0313578A JP H0313578 A JPH0313578 A JP H0313578A JP 14732289 A JP14732289 A JP 14732289A JP 14732289 A JP14732289 A JP 14732289A JP H0313578 A JPH0313578 A JP H0313578A
Authority
JP
Japan
Prior art keywords
substrate
film forming
thin film
film
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14732289A
Other languages
Japanese (ja)
Inventor
Masao Aiga
相賀 正夫
Takushi Itagaki
板垣 卓士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14732289A priority Critical patent/JPH0313578A/en
Publication of JPH0313578A publication Critical patent/JPH0313578A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a desired thin film on both sides of a substrate without turning off a vacuum by providing a substrate holder capable of holding a substrate with the two principal surfaces exposed with sufficient strength and stability and furnishing one film forming chamber or two adjacent chambers with the film forming mechanisms opposed to each other. CONSTITUTION:A retainer 2 provided to the main body 1 of the substrate holder is pushed up to set a substrate 3, the retainer 2 is then returned, and the substrate 3 is held with sufficient strength and stability with the most area of the two principal planes exposed. One chamber 5a in which two film forming mechanisms are opposed is used, or two adjacent chambers 5a and 5b in which the film forming mechanisms are opposed are used. Consequently, the same or different thin films can be formed on both sides simultaneously or one at a time without exposing the substrate 3 to the atmosphere and without detaching the substrate 3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、薄膜形成装置に関し、特に基板ホルダを用
いた連続、単室薄膜形成装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film forming apparatus, and more particularly to a continuous, single-chamber thin film forming apparatus using a substrate holder.

〔従来の技術〕[Conventional technology]

第2図(a)は従来の薄膜形成装置における基板ホルダ
を示す断面図であり、1は基板ホルダ、2はこの基板ホ
ルダ1に固定され、基板を裏面から固定する押さえ金具
、3は基板、4は基板3の厚み方向の位置を固定するテ
ラス部である。
FIG. 2(a) is a cross-sectional view showing a substrate holder in a conventional thin film forming apparatus, where 1 is a substrate holder, 2 is a presser metal fitting fixed to this substrate holder 1 and fixes the substrate from the back side, 3 is a substrate, 4 is a terrace portion that fixes the position of the substrate 3 in the thickness direction.

基板ホルダ1に設置された基板3は、基板3の厚み方向
の位置を固定するテラス部4に接触する。
The substrate 3 placed on the substrate holder 1 comes into contact with a terrace portion 4 that fixes the position of the substrate 3 in the thickness direction.

次いで基板裏面より押さえ金具2によってテラス部4に
押さえることにより基板ホルダ1に固定される。
Next, the substrate is fixed to the substrate holder 1 by pressing it against the terrace portion 4 with the presser fitting 2 from the back side of the substrate.

第2図(C)は従来の連wE薄膜形成装置の概念図であ
り、1は基板ホルダ、5a、5bは成膜チャンバ、6は
基板加熱ヒータ、7は対向電極、8a。
FIG. 2(C) is a conceptual diagram of a conventional continuous wE thin film forming apparatus, in which 1 is a substrate holder, 5a and 5b are film forming chambers, 6 is a substrate heater, 7 is a counter electrode, and 8a.

8b、8cはゲートバルブ、9はガス導入口、10はガ
ス排気系である。
8b and 8c are gate valves, 9 is a gas inlet, and 10 is a gas exhaust system.

基板3が固定された基板ホルダ1をゲートバルブ8aを
開いて、成膜チャンバ5a内に入れる。
The gate valve 8a is opened and the substrate holder 1 to which the substrate 3 is fixed is placed into the film forming chamber 5a.

次いで基板ホルダlは基板加熱ヒータ6によって一定温
度に制御され、ガス排気系19によって真空排気される
。所定の真空度に達した後、成膜が開始される。成膜終
了後、隣接成膜チャンバ5bとのゲートパルプ8bを開
いて、基板ホルダ1を隣りの成膜チャンバ5b内に入れ
る。成膜チャンバ5b内で更に成膜が行われる。
Next, the substrate holder l is controlled to a constant temperature by the substrate heater 6, and is evacuated by the gas exhaust system 19. After reaching a predetermined degree of vacuum, film formation is started. After the film formation is completed, the gate pulp 8b between the adjacent film formation chamber 5b is opened and the substrate holder 1 is placed into the adjacent film formation chamber 5b. Further film formation is performed within the film formation chamber 5b.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の基板ホルダは以上のように構成されているので、
基板の裏面に成膜できず、裏面に成膜するには、−二基
板表面に成膜した後、形成装置から取り出し、基板を基
板ホルダから取り外して、再度セットし直してから成膜
することが必要で、作業能率が低く、また表面に形成し
た薄膜にキズを生じさせる等の問題点があった。
Since the conventional board holder is configured as above,
If you cannot form a film on the back side of the substrate and want to form a film on the back side, -2 After forming a film on the surface of the substrate, remove it from the forming apparatus, remove the substrate from the substrate holder, set it again, and then start forming the film. There were problems such as low work efficiency and scratches on the thin film formed on the surface.

また、従来の単室および連続薄膜形成装置は、基板ホル
ダの片面のみに薄膜を成長させるため、連続で基板の両
面に薄膜を形成することができないという問題があった
Further, conventional single-chamber and continuous thin film forming apparatuses grow a thin film only on one side of a substrate holder, so there is a problem that thin films cannot be continuously formed on both sides of a substrate.

この発明は、上記のような問題点を解消するためになさ
れたもので、基板を容易に脱着でき、かつ基板を取り外
すことな(基板両面に所望の薄膜を形成できる基板ホル
ダを有し、かつ真空を破らずに基板両面に薄膜形成を行
うことのできる薄膜形成装置を得ることを目的とする。
This invention was made in order to solve the above-mentioned problems, and it has a substrate holder that allows the substrate to be easily attached and detached without removing the substrate (it has a substrate holder that can form a desired thin film on both sides of the substrate, and An object of the present invention is to obtain a thin film forming apparatus capable of forming a thin film on both sides of a substrate without breaking the vacuum.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る薄膜形成装置は、基板の端部を伸縮動作
する金具で固定する基板ホルダを有し、かつ成膜室を、
2つの成膜機構を対向して備えた1つの成膜室、あるい
は隣合う成膜室の成膜機構が対向した位置に設けられた
2連の成膜室とし、基板の両面に同時あるいは片面ごと
に同種又は異種の薄膜を、基板を大気にさらすことなく
、形成可能としたものである。
The thin film forming apparatus according to the present invention has a substrate holder that fixes the edge of the substrate with a metal fitting that moves to expand and contract, and a film forming chamber that includes:
One film forming chamber with two film forming mechanisms facing each other, or two film forming chambers with the film forming mechanisms of adjacent film forming chambers facing each other, can be used to coat both sides of the substrate simultaneously or on one side. This makes it possible to form thin films of the same or different types on different substrates without exposing the substrate to the atmosphere.

〔作用〕[Effect]

この発明における薄膜形成装置は、基板が、基板ホルダ
に設けた伸縮動作し基板端部のみを被う金具で基板ホル
ダに固定され、かつ成膜室が、一つの真空室内に対向し
た2つの成膜機構をもつ装置、あるいは隣り合う真空室
のそれぞれの成膜機構が対向した位置に設けられた連続
成膜装置であるため、真空を破ったり、基板を基板ホル
ダからはずし裏返して再セットする手間を要することな
く基板の両面に薄膜を形成することができる。
In the thin film forming apparatus according to the present invention, the substrate is fixed to the substrate holder by a metal fitting provided on the substrate holder that moves to expand and contract and covers only the edge of the substrate, and the film forming chamber has two film forming chambers facing each other in one vacuum chamber. Since the device has a film mechanism or is a continuous film forming device in which the film forming mechanisms in adjacent vacuum chambers are installed in opposing positions, there is no need to break the vacuum or remove the substrate from the substrate holder, turn it over, and reset it. Thin films can be formed on both sides of the substrate without requiring additional steps.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図(a)はこの発明の一実施例による薄膜形成装置
の基板ホルダを示し、第1図(b)、 (C)は押さえ
金具の構造断面図を示す、第1図において、3は基板で
ある。1は基板ホルダ本体であり、これは、装着される
基板3の2つの主面のそれぞれの大部分(90%以上)
の面積を露出する開口を持つ。
FIG. 1(a) shows a substrate holder of a thin film forming apparatus according to an embodiment of the present invention, and FIGS. 1(b) and 1(C) show structural cross-sectional views of a presser fitting. In FIG. It is a board. 1 is a board holder main body, which covers most (90% or more) of each of the two main surfaces of the board 3 to be mounted.
It has an opening that exposes an area of .

2は伸縮動作し、基板3を固定する押さえ金具、11は
押さえ金具2を基板3に押さえるために押さえ金具内部
に内蔵されたバネであり、これにより押さえ金具2は基
板を十分な強度と安定度で保持する機構として機能する
Reference numeral 2 denotes a holding metal fitting that expands and contracts to fix the board 3; 11 is a spring built into the holding metal fitting to press the holding metal fitting 2 to the substrate 3; thereby, the holding metal fitting 2 holds the board with sufficient strength and stability. It functions as a holding mechanism.

基板ホルダ本体1に設けられた押さえ金具2を第1図(
a)図示上方に押し上げ、基板3を基板ホル固定される
The presser metal fitting 2 provided on the substrate holder main body 1 is shown in Fig. 1 (
a) Push up upward in the figure to fix the substrate 3 in the substrate holder.

第1図(d)、 (e)はそれぞれこの発明による連続
薄膜形成装置および単室薄膜形成装置の概念図であり、
1は基板ホルダ、5a、5bは成膜チャンバ、6は基板
加熱ヒータ、7は対向電極、8a、8b。
FIGS. 1(d) and 1(e) are conceptual diagrams of a continuous thin film forming apparatus and a single chamber thin film forming apparatus according to the present invention, respectively,
1 is a substrate holder, 5a, 5b are film forming chambers, 6 is a substrate heater, 7 is a counter electrode, 8a, 8b.

8cはゲートバルブ、9はガス導入口、10はガス排気
系である。
8c is a gate valve, 9 is a gas inlet, and 10 is a gas exhaust system.

これらの装置は、1つのチャンバー内に、あるいは隣設
した2つのチャンバー内に、2つの対向電極7を有する
。従って、基板3の両面を露出して固定された基板ホル
ダ1を用いることにより、真空を破らず、したがって基
板を大気にさらすことなく、また基板3を取り外すこと
なく基板の両面に同時に、あるいは片面ごとに同種又は
異種の薄膜を、形成可能である。
These devices have two opposing electrodes 7 in one chamber or in two adjacent chambers. Therefore, by using the substrate holder 1 that is fixed with both sides of the substrate 3 exposed, it is possible to simultaneously or only one side of the substrate 3 without breaking the vacuum, thus exposing the substrate to the atmosphere, and without removing the substrate 3. It is possible to form thin films of the same type or different types in each case.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば伸縮する金具を持つ基
板ホルダにより、基板を基板の両面が露出した状態で保
持するようにし、かつ、1つの成膜チャンバ内、あるい
は隣設チャンバ内に2つの成膜機構を対向させて設置す
るようにしたため、基板の脱着が容易であるとともに、
基板を取り外すことなく、かつ真空を破らずに基板両面
に成膜できる効果がある。
As described above, according to the present invention, a substrate is held with both sides of the substrate exposed using a substrate holder having an expandable metal fitting, and two film-forming chambers or two adjoining chambers are used. Since two film forming mechanisms are installed facing each other, it is easy to attach and detach the substrate, and
This has the effect of allowing film formation on both sides of the substrate without removing the substrate and without breaking the vacuum.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)はこの発明の一実施例による基板ホルダの
概略図、第1図(b)、 (C)は押さえ金具の構造断
面図、第1図(イ)、(e)は薄膜形成装置の概念図、
第2図(a)、 (b)は従来の基板ホルダを示す平面
図、および断面図、第2図(C)は従来の連続薄膜形成
装置の概念図である。 1は基板ホルダ本体、2は押さえ金具、3は基板、4は
テラス部、5a、5bは成膜チャンバ、6は基板加熱ヒ
ータ、7は対向電極、8a、8bはゲートバルブ、9は
ガス導入口、10はガス排気系である。 なお図中同一符号は同−又は相当部分を示す。 10ニア7右I齋逆 第 図 (0) (b) (C)
FIG. 1(a) is a schematic diagram of a substrate holder according to an embodiment of the present invention, FIGS. 1(b) and 1(C) are structural sectional views of a holding fixture, and FIGS. Conceptual diagram of the forming device,
FIGS. 2(a) and 2(b) are a plan view and a sectional view showing a conventional substrate holder, and FIG. 2(C) is a conceptual diagram of a conventional continuous thin film forming apparatus. 1 is a substrate holder main body, 2 is a presser, 3 is a substrate, 4 is a terrace part, 5a, 5b are film forming chambers, 6 is a substrate heater, 7 is a counter electrode, 8a, 8b are gate valves, 9 is a gas introduction The port 10 is a gas exhaust system. Note that the same reference numerals in the figures indicate the same or equivalent parts. 10 near 7 right I reverse chart (0) (b) (C)

Claims (1)

【特許請求の範囲】[Claims] (1) 薄膜が形成される基板を装着する基板ホルダを
有する薄膜形成装置において、 上記基板ホルダは、 装着される基板の2つの主面のそれぞれの大部分の面積
を露出した状態で、上記基板を十分な強度と安定度で保
持する機構をもち、 かつ成膜室として、2つの成膜機構を対向して備えた1
つの成膜室、あるいは隣合う成膜室の成膜機構が対向し
た位置に設けられた2連の成膜室を備え、 基板の両面に同時あるいは片面ごとに同種又は異種の薄
膜を、基板を大気にさらすことなく形成可能であること
を特徴とする薄膜形成装置。
(1) In a thin film forming apparatus having a substrate holder for mounting a substrate on which a thin film is to be formed, the substrate holder is configured to hold the substrate in a state in which most areas of each of the two main surfaces of the substrate to be mounted are exposed. It has a mechanism to hold the film with sufficient strength and stability, and is equipped with two film-forming mechanisms facing each other as a film-forming chamber.
It is equipped with one film formation chamber or two film formation chambers in which the film formation mechanisms of adjacent film formation chambers are installed in opposing positions, and the same or different types of thin films can be applied to both sides of the substrate at the same time or on each side. A thin film forming apparatus characterized by being capable of forming a thin film without exposing it to the atmosphere.
JP14732289A 1989-06-09 1989-06-09 Thin film forming device Pending JPH0313578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14732289A JPH0313578A (en) 1989-06-09 1989-06-09 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14732289A JPH0313578A (en) 1989-06-09 1989-06-09 Thin film forming device

Publications (1)

Publication Number Publication Date
JPH0313578A true JPH0313578A (en) 1991-01-22

Family

ID=15427565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14732289A Pending JPH0313578A (en) 1989-06-09 1989-06-09 Thin film forming device

Country Status (1)

Country Link
JP (1) JPH0313578A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002058121A1 (en) * 2001-01-22 2002-07-25 Ishikawajima-Harima Heavy Industries Co., Ltd Method and device for plasma cvd
JP2013072132A (en) * 2011-09-29 2013-04-22 Ulvac Japan Ltd Film-forming apparatus
US9165748B2 (en) 2000-05-17 2015-10-20 Ihi Corporation Plasma CVD method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9165748B2 (en) 2000-05-17 2015-10-20 Ihi Corporation Plasma CVD method
WO2002058121A1 (en) * 2001-01-22 2002-07-25 Ishikawajima-Harima Heavy Industries Co., Ltd Method and device for plasma cvd
JP2002217119A (en) * 2001-01-22 2002-08-02 Anelva Corp Plasma cvd method and its apparatus
US7047903B2 (en) 2001-01-22 2006-05-23 Ishikawajima-Harima Heavy Industries Co., Ltd. Method and device for plasma CVD
AU2002225452B2 (en) * 2001-01-22 2006-08-10 Ishikawajima-Harima Heavy Industries Co., Ltd Method and device for plasma CVD
CN100349261C (en) * 2001-01-22 2007-11-14 石川岛播磨重工业株式会社 Method and device for plasma CVD
JP2013072132A (en) * 2011-09-29 2013-04-22 Ulvac Japan Ltd Film-forming apparatus

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