RU96110939A - METHOD FOR PRODUCING REGULAR SILICON CRYSTALS - Google Patents

METHOD FOR PRODUCING REGULAR SILICON CRYSTALS

Info

Publication number
RU96110939A
RU96110939A RU96110939/25A RU96110939A RU96110939A RU 96110939 A RU96110939 A RU 96110939A RU 96110939/25 A RU96110939/25 A RU 96110939/25A RU 96110939 A RU96110939 A RU 96110939A RU 96110939 A RU96110939 A RU 96110939A
Authority
RU
Russia
Prior art keywords
silicon crystals
producing regular
regular silicon
producing
crystals
Prior art date
Application number
RU96110939/25A
Other languages
Russian (ru)
Other versions
RU2117081C1 (en
Inventor
А.А. Щетинин
В.А. Небольсин
А.И. Дунаев
Е.Е. Попова
П.Ю. Болдырев
Original Assignee
Воронежский государственный технический университет
Filing date
Publication date
Application filed by Воронежский государственный технический университет filed Critical Воронежский государственный технический университет
Priority to RU96110939A priority Critical patent/RU2117081C1/en
Priority claimed from RU96110939A external-priority patent/RU2117081C1/en
Application granted granted Critical
Publication of RU2117081C1 publication Critical patent/RU2117081C1/en
Publication of RU96110939A publication Critical patent/RU96110939A/en

Links

Claims (1)

Способ получения регулярных нитевидных кристаллов кремния, включающий нанесение инициирующей примеси посредством электрохимического осаждения островков металла из раствора электролита на ростовую подложку, отличающийся тем, что на поверхность кремниевой пластины напыляют слой металла толщиной не менее
Figure 00000001
а маскирование поверхности пластины осуществляют фоторезистом.A method of producing regular whisker silicon crystals, comprising applying an initiating impurity by electrochemical deposition of metal islands from an electrolyte solution onto a growth substrate, characterized in that a metal layer is deposited on the surface of the silicon wafer with a thickness of at least
Figure 00000001
and masking the surface of the plate is carried out by photoresist.
RU96110939A 1996-05-30 1996-05-30 Method of preparing regular silicon filamentary crystals RU2117081C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU96110939A RU2117081C1 (en) 1996-05-30 1996-05-30 Method of preparing regular silicon filamentary crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96110939A RU2117081C1 (en) 1996-05-30 1996-05-30 Method of preparing regular silicon filamentary crystals

Publications (2)

Publication Number Publication Date
RU2117081C1 RU2117081C1 (en) 1998-08-10
RU96110939A true RU96110939A (en) 1998-08-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU96110939A RU2117081C1 (en) 1996-05-30 1996-05-30 Method of preparing regular silicon filamentary crystals

Country Status (1)

Country Link
RU (1) RU2117081C1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2456230C2 (en) * 2009-12-02 2012-07-20 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Method to produce epitaxial filiform nanocrystals of semiconductors of permanent diameter
RU2712534C9 (en) * 2016-12-14 2020-03-19 федеральное государственное бюджетное учреждение высшего образования и науки "Санкт-Петербургский национальный исследовательский Академический университет имени Ж.И. Алферова Российской академии наук" Method of forming thin ordered semiconductor filamentary nanocrystals without participation of external catalyst on silicon substrates

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