JPH03135022A - Treatment apparatus for substrate - Google Patents

Abstract

PURPOSE:To simplify a constitution and to make an apparatus small by a method wherein an evcauation system is used in common for a plurality of transfer chambers. CONSTITUTION:Vacuum treatment chambers 1, 1' are arranged and installed, via gate valves 9a, 9b, on both sides of a vacuum-type transfer chamber 7 in which a substrate transfer means 8 has been installed; in addition, transfer chambers 2a, 2b which can be vacuum-evacuated and in which substrate-transfer means 8 have been installed and arranged and installed on both sides of the chambers. Vacuum systems 11a, 11b, 11c which are used to vacuum-evacuate chambers 7, 2a, 2b are used in common or are made common. Consequently, an evacuation system is simplified and a treatment apparatus can be made small.

Description

Detailed Description of the Invention [Objective of the Invention] (Industrial Application Field) The present invention relates to a substrate having a transfer chamber and a vacuum-type processing chamber that can be evacuated, such as for plasma etching processing and plasma ashing processing. It relates to a processing device.

(Conventional technology) For example, a thin conductive film deposited on a glass substrate surface,
As a means of forming the required fine pattern, a resist mask is applied on the conductive film, and after plasma etching is performed to selectively remove the exposed conductive film, a required ashing process is performed to remove the resist mask. It is known to form a predetermined fine pattern by removing it. That is, a plasma etching device is used, and a substrate to be processed, such as a glass substrate on which a resist thin film is formed, is placed on the lower electrode of flat plate electrodes arranged horizontally in a vacuum type processing chamber of the device. The vacuum type processing chamber is evacuated, a necessary etching gas is introduced, and while being exhausted, a high frequency voltage is applied between the electrodes to etch the exposed thin film on the surface of the substrate to be processed. It is known that the resist mask is then removed (ashing) by changing the processing gas and processing conditions in the processing chamber of the etching apparatus.

By the way, in the above plasma etching apparatus, as shown schematically in FIG.
On both sides, transfer chambers (load lock chambers) 2a and 2b that can be evacuated are connected via gate valves 3a and 3b in order to speed up the processing cycle and prevent dust from entering. is transferred from the positioning table 4a in the clean bench 4 to the vacuum type processing chamber 1 by a transfer means arranged in the transfer chamber 2a,
After performing the required processing, the vacuum type processing chamber 1 is taken out via a gate valve 3b to a separately provided transfer chamber 2b by means of a transfer means disposed within the transfer chamber 2b, and is then transferred through a gate valve 5b. The sample is then taken out onto a positioning table 4a' on the clean bench 4. That is, when performing the required processing on the substrate to be processed in the vacuum processing chamber 1, first open the gate valve 5a that partitions the clean bench 4 and the transfer chamber 2a that can be evacuated, and then open the transfer chamber 2a. By means of a disposed transfer means, for example, a bendable transfer arm having a substrate mounting portion at its tip, the positioning table 4a on the clean bench 4 outside the transfer chamber 2a is first transferred to the transfer chamber through the opened gate valve 5a. 2a. Then, the previously opened gate valve 5a is closed, and the inside of the transfer chamber 2a is evacuated and evacuated by driving a vacuum and exhaust system 6a equipped with a mechanical pump 6a and a rotary pump 6b connected thereto, and then vacuum type processing is performed. Gate valve 3 that separates room 1
a is opened, the transfer means is transferred onto the electrode ia of the vacuum processing chamber 1, and the transfer means returns to the transfer chamber 2a, while the gate valve 3a that partitions off the vacuum processing chamber 1 is closed and the vacuum In the mold processing chamber 1, necessary processing is performed. 1. Prior to the completion of the required processing, a transfer chamber 2b which is equipped with a transfer means separately provided through a gate valve 3b in the vacuum type processing chamber l and which can be evacuated; After evacuating and evacuating by driving a predetermined exhaust system 6c, the gate valve 3b that partitions the vacuum processing chamber 1 and the separately provided transfer chamber 2L+ is opened, and the electrode ia in the vacuum processing chamber 1 is opened.
The substrate to be processed is taken out from above into the transfer chamber 2b by the transfer means, while the previously opened gate valve 3b is closed and the driven exhaust system 6c is stopped. Next, the transfer chamber 2b is returned to atmospheric pressure by introducing an inert gas, the gate valve 5b separating it from the clean bench 4' is opened, and the substrate to be processed can be taken out to the 4° side of the clean bench by the transfer means. It is configured as follows.

(Problems to be Solved by the Invention) The plasma etching apparatus described above can perform, for example, plasma etching and plasma ashing in the vacuum processing chamber 1 by changing the processing gas and processing conditions in the vacuum processing chamber 1 of the etching apparatus. They perform different vacuum processing functions. However, in the above processing apparatus, the vacuum type processing chamber 1 and the vacuum-capable transfer chambers 2a and 2b are evacuated and evacuated separately (dedicated) to the required vacuum or reduced pressure state, respectively, continuously or intermittently. ) Equipped with exhaust systems 8a, 8b, and 8e. For this reason, there are disadvantages such as the exhaust system' (ia, 6b, 8c) becoming complicated and the equipment itself becoming larger.In particular, vacuum type processing chambers are arranged in multiple stages via vacuum type transfer chambers, and different processing In the case of a processing device configured so that it can be performed in an assembly line,
This further increases the complexity of the exhaust system.

The present invention has been made to solve such conventional problems, and provides a substrate processing apparatus that has a simplified configuration and a smaller size by sharing an exhaust system for a plurality of transfer chambers. The purpose is to

[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a transfer chamber that can be evacuated and has a means for transferring a substrate inside, and a gate valve in the transfer chamber that can be evacuated. a vacuum processing chamber disposed through the vacuum processing chamber, and an exhaust system for evacuating and evacuating the vacuum processing chamber and the transfer chamber that can be evacuated; It is characterized by having a common system.

(Function) In the present invention, the exhaust system involved in evacuation and evacuation of the vacuum type transfer chamber in which the substrate transfer means is installed is commonly or commonly used. In other words, the configuration is such that the exhaust systems for the plurality of vacuum-capable transfer chambers in which the transfer means of the processing apparatus are installed are not separate but shared. Therefore, the configuration of the exhaust system can be simplified and problems such as maintenance can be reduced, and it can also be easily miniaturized.

(Example) Next, examples of the present invention will be described.

FIG. 1 schematically shows an example of a substrate processing apparatus according to the present invention, where 7 is a vacuum transfer chamber equipped with a substrate transfer means 8, and t and t' are on both sides of the vacuum transfer chamber 7. Vacuum type processing chambers for plasma etching and plasma ashing, which have different processing functions, are respectively disposed through gate valves 9a and 9b, and gate valves 3a and 2a and 2b are connected to the vacuum type processing chambers 1.1'. 3b is a transfer chamber equipped with a substrate transfer means 8° and capable of being evacuated; 9a and 9b are dedicated for evacuating and evacuating the vacuum type processing chamber 1.1' to a required vacuum state, respectively; For example, the exhaust system is equipped with a mechanical booster pump loa and a rotary pump fob, and lla, 11b
, 11e are connected to the vacuum-type transfer chamber 8 and the evacuation-capable transfer chambers 2a and 2b through a mechanical booster pump 10a at one end, while an exhaust system concentrated on the rotary pump 10b at the other end. It is. The exhaust systems 11b and 11c are provided with control valves 12a and 12b, respectively, so as to perform the required vacuum and exhaust in synchronization with the operation of the corresponding vacuum transfer chambers t and i'.
is arranged.

In the above-mentioned example of the substrate processing apparatus, the vacuum type transfer chamber 7 containing the substrate transfer means 8 is as shown in perspective in FIG.
It mainly consists of a vacuum chamber 7c consisting of a vacuum chamber body 7a and a lid 7b that can be opened and closed to seal the upper opening, and a telescopic transfer arm 8 for transferring substrates placed in the center of the vacuum chamber 7c. .

In addition, flat arm passage holes 7d and 7c are formed in opposing side walls of the vacuum chamber 7c, respectively.

Gate valves (3a, 3b), not shown, are provided in the arm passage holes 7d and 7e, so that the vacuum chamber 7C can be closed airtight. Arc-shaped recesses 7r are formed on the inner surface of the side wall adjacent to the side wall in which these arm passage holes 7d and 7e are formed, respectively, along the locus of the bent tip of the transfer arm 8 (in the figure, one side is A through hole 7g for air intake, which communicates with the vacuum pump, is provided below the recess 7r.

By the way, the above-mentioned transport arm 8 includes three arms 8a, which are connected by two joints that can pivot about a rotating shaft.
8b and 8c, the base end of the first arm 8a is fixed to the outer shaft of a double rotating shaft (not shown) protruding from the center of the vacuum chamber 7c, and the third arm 8c at the tip has a mounting portion for the substrate 13. A
is formed. A pulley (not shown) is mounted on the double rotation shaft and the rotation shaft of each joint of the transport arm 8,
A belt is passed between each boot 9 via a plurality of guide rollers, and each joint is configured to rotate as the inner shaft of the double rotating shaft rotates. And the outer shaft and inner sleeve of the double rotating shaft are each arm 8a, 8b, 8c.
Their rotations are separately controlled to produce the movements shown in the figure.

FIG. 3 shows a state in which the transfer arm 8 extends from the first arm passage hole 7d and carries the substrate 13 placed on the surface of the electrode 1a in one vacuum type processing chamber 2a, and then transfers the substrate 13 to the second one. This figure shows the movement of the arm extending from the arm passage hole 7e and inserting the substrate 13 onto the surface of the electrode 111a' in another adjacent vacuum processing chamber 1°.

In the operation of the transfer arm 8, the first arm 8a rotates counterclockwise in the figure at a constant speed from the state where the substrate 13 is mounted at the maximum extension position due to the rotation of the 2ff1 rotation axis, and the second
The arm 8b rotates clockwise at twice the angular velocity of the first arm 8a, and the third arm 8c rotates in the same direction as the first arm 8a at the same angular velocity. Therefore, the transfer arm 8 is
From the state shown in FIG. 12A, as shown in FIGS. 3B and 3E, the joint portions of the first arm 8a and the second arm 8b are bent, and the third arm 8C retreats on the same straight line. At this time, the gate valve 9a on the side of the arm passage hole 7d is opened,
The gate valve 9b on the side of the arm passage hole 7C is closed.

In this way, when the distance from the rotation axis of the first arm 8a to the tip of the third arm 8c becomes approximately equal to the length of the first arm 8a, the rotation of the inner shaft is temporarily stopped, and as shown in the figure (
While maintaining this state as shown in d) and (e),
Rotate 180'. At this time, the gate valve 9a on the side of the arm passage hole 7d is closed, and the inside of the vacuum chamber 7C is evacuated auxiliary to lower the degree of vacuum in the processing chamber l° connected to the arm passage hole 7C via the gate valve 9b. It is considered to have a low degree of vacuum. After that, the gate valve 9b on the side of the arm passage hole 7e is opened, and the outer ring and inner shaft of the double rotating shaft are rotated in the opposite direction, and as shown in FIG. 3 arm 8C extends and the board 13
is inserted into a processing chamber 1° in a vacuum state.

On the other hand, a vacuum transfer chamber 7 containing the substrate transfer means 8
Vacuum processing chambers 1 and 1 are provided with substrate transfer means 8° via gate valves 3a and 3b, respectively, and vacuum transfer is possible. The basic configuration of the chambers 2a and 2b is the same as that of the vacuum transfer chamber 7, which is equipped with the means for transferring the substrate, and is connected to an atmospheric pressure clean bench 4.4'' via gate valves 5a and 5b. has been done.

Next, the operation of this processing device will be explained.

In this processing apparatus, first, a glass substrate provided with, for example, a resist mask is supplied from an indexer to a body thinning table 4a of a clean bench 4 while the interior of a vacuum transfer chamber 2a that can be evacuated is at atmospheric pressure. This glass substrate is taken into the vacuum transfer chamber 2a by the transfer arm 8° of the vacuum transfer chamber 2a, and in this state, the gate valve 5a is closed, and the gate valve 5a corresponds to (interlocks with) the closing and evacuates. The system 11b is driven and the vacuum transfer chamber 2a is evacuated to a higher vacuum level than the vacuum processing chamber 1 connected via the gate valve 3a. Next, the gate valve 3a is opened, the transfer arm 8' is extended, and the counter electrodes 1a and I arranged in the vacuum processing chamber 1 are
A glass substrate is mounted on the lower electrode Ia of b, and the transport am 8
" is drawn into the vacuum transfer chamber 2a again and the gate valve 3a is closed, and a necessary plasma etching process is performed in the vacuum processing chamber 1.
After a is closed, the drive of the exhaust system 11b is stopped, while the gate valve 5a is opened and the transfer chamber 2a is returned to atmospheric pressure and ready to transfer the next number of substrates to be processed from the clean bench 4 side.

While the required plasma etching process is being performed in the vacuum processing chamber 1, the vacuum transfer chamber 7 is evacuated, and when the plasma etching process for the glass substrate is completed, the gate valve 9a is opened and the vacuum transfer chamber 7 is evacuated. The transfer arm 8 of the transfer chamber 7 is inserted into the vacuum processing chamber 1, the glass substrate is taken into the vacuum transfer chamber 7, and the gate valve 9a is closed again. Thereafter, the gate valve 9b on the exit side of the vacuum transfer chamber 7 is opened, and the arm 8 holding this glass substrate is extended and connected to the vacuum transfer chamber 7 via the gate valve 9b. Lower electrode 1a of counter electrode 1a'#1b' disposed in vacuum type processing chamber l°
A glass substrate is mounted thereon, and the transport arm 8 is again drawn into the vacuum transfer chamber 7, the gate valve 9b is closed, and the required ashing process is performed in the vacuum processing chamber 1. When the gate valve 5b is closed in this state, the exhaust system 11c, which has one end connected to the vacuum transfer chamber 2b, is activated in response to the closure of the gate valve 5b, and the vacuum type process connected to the vacuum transfer chamber 2b is activated. The chamber is evacuated to a higher degree of vacuum than the vacuum level of 1°. Next, the gate valve 3b
is opened and the glass substrate is taken into the vacuum transfer chamber 1° by the transfer arm 8'' of the vacuum transfer chamber 1°, the gate valve 3b is closed, and in response to the closing of the gate valve 3b, the air is evacuated. The evacuation and evacuation operations of the vacuum transfer chamber 1' driven by the system ie are stopped.

After taking the glass substrate into the vacuum transfer chamber 1° as described above, the gate valve 5b was opened to return the inside of the vacuum transfer chamber 1° to atmospheric pressure, while the transfer arm 8° of the vacuum transfer chamber 1° was opened. The glass substrate, which has been subjected to the necessary vacuum treatment, is extended to the 4° side of the clean bench through the gate valve 5b and placed on the positioning table 4a' of the clean bench 4'.
It is placed on top and carried out by a conveyor device (not shown).

The processing apparatus having the configuration shown in Figure 1 can sequentially and continuously perform different types of processing on substrates as described above, and can also continuously supply substrates to be processed and perform the required processing. obtain. By the way, when the substrates to be processed are continuously supplied and subjected to the required processing, each vacuum transfer chamber t, which can be evacuated,
t', the vacuum transfer chamber 7 and the vacuum type processing chambers 2a, 2b each repeat a certain operation or operation.

In this continuous operation, the vacuum transfer chamber 7 and the vacuum processing chambers 2a, 2b each have an exhaust system 9.
A, 9b, and lla are continuously driven to create a vacuum continuously.

However, in the vacuum transfer chamber 1.1°, which can be evacuated, the exhaust system is connected to the clean bench 4°4°, which is at atmospheric pressure, to transfer the substrate to be processed. The drive becomes intermittent. Moreover, although the intermittent driving of the exhaust systems 11b and 1ie is not synchronized,
Control valves 12a and 12 respectively disposed in 1c
It is connected to the rotary pump job' by b, and performs the required vacuum and exhaust in synchronization with the operation of the corresponding vacuum transfer chambers t and t'.

In the above example, the vacuum processing chambers 2a and 2b are provided on both sides of the vacuum transfer chamber 7, and the vacuum processing chamber 2a and
, 2b, there is a vacuum transfer chamber l which can be evacuated.

Although the configuration is shown in which a plurality of vacuum transfer chambers 7 are provided, vacuum processing chambers 2a, 2b, and 2b are provided on both sides of each vacuum transfer chamber 7.
. . . may be provided, or a vacuum transfer chamber capable of evacuation may be provided on both sides of the vacuum type processing chamber. Further, the means for transferring the substrate contained in the vacuum transfer chamber 1.1' which can be evacuated and the vacuum type transfer chamber 7 are not limited to the above-mentioned examples, and of course, other transfer means may be used.

[Effects of the Invention] As explained above, in the substrate processing apparatus according to the present invention, a vacuum processing chamber is disposed via a gate valve on both sides of a vacuum type transfer chamber equipped with a substrate transfer means, and further In an apparatus in which a transfer chamber that can be evacuated is provided with substrate transfer means on both sides, a vacuum system for evacuating and evacuating the vacuum-type transfer chamber and the evacuable transfer chamber is shared or shared. It's a shame. In other words, the vacuum and exhaust systems for transferring the vacuum type transfer chamber and the vacuum-capable transfer chamber are integrated into one structure. Therefore, it is possible to simplify the exhaust system (avoiding a complicated configuration), reduce the size of the processing device, and improve maintenance problems, as well as reduce costs.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view schematically showing an embodiment of a substrate processing apparatus according to the present invention, and FIG. 2 is a cross-sectional view showing an internal structure of a substrate transfer means used in an embodiment of the substrate processing apparatus according to the present invention. FIG. 3 is an explanatory diagram showing the operation of the transfer means installed in the vacuum transfer chamber shown in FIG. 4.
The figure is a sectional view showing the main parts of a conventional plasma etching apparatus. 1, l゛... Vacuum processing chambers 2a, 2b... Vacuum transfer chambers 3a, 3 that can be evacuated
b, 5a, 51y 9a, 9b b - Gate valve 4
．． 4°...Clean bench 7...Vacuum transfer chamber with substrate transfer means 8.8"
...Transportation means

Claims (2)

[Claims] (1) A vacuum type processing chamber, a transfer chamber equipped with a substrate transfer means arranged via gate valves on both sides of the vacuum type processing chamber, and capable of being evacuated; the transfer chamber capable of being evacuated; 1. A substrate processing apparatus comprising: an evacuation system for evacuating each mold processing chamber; the evacuation system connected to a transfer chamber that can be evacuated among the evacuation systems is shared; (2) A vacuum transfer chamber equipped with substrate transfer means, a vacuum processing chamber provided on both sides of the vacuum transfer chamber via gate valves, and It is equipped with a transfer chamber that is equipped with a transfer means for the disposed substrate and that can be evacuated, and an exhaust system that evacuates the transfer chamber that can be evacuated, the vacuum type transfer chamber, and the vacuum type processing chamber, respectively. A substrate processing apparatus characterized in that an exhaust system connected to a vacuum type transfer chamber and a vacuum-capable transfer chamber is shared.