JPH03134810A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH03134810A JPH03134810A JP27159989A JP27159989A JPH03134810A JP H03134810 A JPH03134810 A JP H03134810A JP 27159989 A JP27159989 A JP 27159989A JP 27159989 A JP27159989 A JP 27159989A JP H03134810 A JPH03134810 A JP H03134810A
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive
- magnetic
- film
- recording medium
- head according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 9
- 230000005291 magnetic effect Effects 0.000 claims abstract description 72
- 239000010408 film Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 229910000889 permalloy Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims 2
- 239000000696 magnetic material Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 230000035699 permeability Effects 0.000 claims 1
- 229910000702 sendust Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910000859 α-Fe Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011810 insulating material Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気記憶装置に使用する記録再生用の磁気抵
抗効果型ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetoresistive head for recording and reproducing used in a magnetic storage device.
従来の差動型磁気抵抗効果型ヘッドは特開昭61−19
9684号に記載のように、磁気抵抗効果膜に3個の電
極リード線を備える構造になっていた。差動型磁気抵抗
効果型ヘッドは出力波形の直線化、(3)
バイアス磁界強度の実効的な増大、等の利点を有するが
、ヘッドのトラック幅が狭くなると、3個の電極の内、
中央の電極部が感磁膜として有効に働かないために、狭
トラツクになると実効的出力が落ちるという欠点があっ
た。The conventional differential magnetoresistive head was published in Japanese Patent Application Laid-open No. 61-19.
As described in No. 9684, the structure was such that a magnetoresistive film was provided with three electrode lead wires. The differential magnetoresistive head has advantages such as linearization of the output waveform and (3) effective increase in bias magnetic field strength, but as the track width of the head becomes narrower, one of the three electrodes
Since the central electrode part does not function effectively as a magnetically sensitive film, there is a drawback that the effective output drops when the track becomes narrow.
上記従来技術は、差動型磁気抵抗効果ヘッドの中央電極
部の非感磁部に対する配慮がなされておらず、磁気記録
媒体から侵入した磁界を有効に利用していなかった。The above-mentioned conventional technology does not take into consideration the non-magnetically sensitive portion of the central electrode portion of the differential magnetoresistive head, and does not effectively utilize the magnetic field penetrating from the magnetic recording medium.
本発明は上記非感磁部、すなわち電極部に侵入する記録
媒体からの磁界を有効に利用し、差動型磁気抵抗効果型
ヘッドの出力を向上するとともに、3個の電極リード部
に侵入する出方に寄与しない磁界の影響、すなわちノイ
ズを低減し、かつ、1〜クラク幅が厳密に設定された差
動型磁気抵抗効果型ヘッドを提供することを目的とする
。The present invention improves the output of a differential magnetoresistive head by effectively utilizing the magnetic field from the recording medium that enters the non-magnetically sensitive part, that is, the electrode part, and also improves the output of the differential magnetoresistive head. It is an object of the present invention to provide a differential magnetoresistive head in which the influence of a magnetic field that does not contribute to the output, that is, noise, is reduced, and the crack width is strictly set from 1 to 1.
」−起重的を達成するために、第1図で示す差動型磁気
抵抗効果素子の感磁部1に近接した磁路5(4)
を設置し、さらに好ましくは侵入した磁界が感磁部1に
垂直に侵入しやすくするために、感磁部を挟んで記録媒
体対抗面6の反対側に磁路7,8を設置したものである
。”-In order to achieve a magnetic field effect, it is preferable to install a magnetic path 5 (4) close to the magnetically sensitive part 1 of the differential magnetoresistive element shown in FIG. In order to facilitate perpendicular penetration into the section 1, magnetic paths 7 and 8 are installed on the opposite side of the surface 6 facing the recording medium with the magnetically sensitive section in between.
第1図において、記録媒体(図示せず)に対向する磁路
先端6に侵入した磁界は、磁気抵抗効果型素子の感磁部
1に近づくに従って幅が広くなる磁路を通り、感磁部1
に侵入する。感磁部1−に侵入した磁界は、更に媒体対
抗面と反対側に設置されている磁路7,8を通る。第1
図において、磁路7,8が設置されていない場合には、
侵入磁界が拡がるために、感磁部に侵入する磁界強度が
減少し、磁気抵抗効果の出力が低下するとともに、感磁
部に対して垂直な向きをもつ侵入磁界とならないために
、ノイズが増大する。In FIG. 1, the magnetic field entering the magnetic path tip 6 facing the recording medium (not shown) passes through a magnetic path whose width becomes wider as it approaches the magnetically sensitive part 1 of the magnetoresistive element, and passes through the magnetically sensitive part 1 of the magnetoresistive element. 1
to invade. The magnetic field that has entered the magnetic sensing part 1- further passes through magnetic paths 7 and 8 installed on the side opposite to the medium facing surface. 1st
In the figure, if magnetic paths 7 and 8 are not installed,
As the penetrating magnetic field expands, the strength of the magnetic field penetrating into the magnetic sensing part decreases, reducing the output of the magnetoresistive effect, and the noise increases because the penetrating magnetic field does not have a direction perpendicular to the magnetic sensing part. do.
侵入磁界をさらに効率よく感磁部に侵入させるためには
、第2図9で示すように、磁路が感磁部と近接する部分
の電極部に対向する部分に凹部を設けると、差動型磁気
抵抗素子の2ケの感磁部に(5)
侵入磁界が集中的に入る。さらに侵入磁界を集中させる
ために、第3図10.11で示すように、磁路を2個に
分離してもよい。In order to make the penetrating magnetic field penetrate into the magnetically sensitive part more efficiently, as shown in FIG. (5) The penetrating magnetic field enters the two magnetically sensitive parts of the magnetoresistive element in a concentrated manner. In order to further concentrate the penetrating magnetic field, the magnetic path may be separated into two as shown in FIG. 3, 10.11.
以下、本発明の一実施例を第1図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
磁気シールドの役割を果たす軟磁性クラマイト。Soft magnetic cramite that acts as a magnetic shield.
磁気シールド膜を備えた非磁性基板など、所望の基板(
図示せず)上にA n 20s、 S i 02等の絶
縁材料からなる磁気ギャップ膜(図示せず)が形成され
た基板表面上に、先ず磁気抵抗効果を示すパーマロイ薄
膜を約50nm真空蒸着法で形成し、続けてバイアス磁
界印加用シャント膜としてNbを蒸着する。以上のよう
に作られたNb/パーマロイ2層膜を第1図で示すよう
に微細加工し、この上に磁気ギャップ用絶縁膜(図示せ
ず)と形成し、上述と同様の磁気シールド材料(図示せ
ず)を設置して、磁気ヘッドとした。The desired substrate (such as a non-magnetic substrate with a magnetic shielding film)
First, a permalloy thin film exhibiting a magnetoresistive effect was deposited to a thickness of about 50 nm by vacuum evaporation on the substrate surface on which a magnetic gap film (not shown) made of an insulating material such as An 20s or Si 02 was formed. Then, Nb is deposited as a shunt film for applying a bias magnetic field. The Nb/permalloy two-layer film produced as described above is microfabricated as shown in Figure 1, a magnetic gap insulating film (not shown) is formed thereon, and the same magnetic shielding material (not shown) as described above is formed. (not shown) was installed to form a magnetic head.
このとき、第1図で示した1−ラック幅aが10μmの
場合、そのまま3端子の差動型磁気抵抗素(6)
子にすると1へランク幅10μmの中、2X10”A/
cnY程度の通電量で駆動するには中央電極幅として最
小5μmは必要であるため、記録媒体から信号磁界の入
るセンサ部の幅は5μm以下となる。At this time, if the 1-rack width a shown in FIG.
In order to drive with an amount of current on the order of cnY, a minimum width of 5 μm is required as the center electrode width, so the width of the sensor portion into which the signal magnetic field from the recording medium enters is 5 μm or less.
これに対して実施例で示した磁路を備えたヘッドでは、
記録媒体のトラック幅全域からの信号磁界を吸い込み、
この信号磁界のほぼ100%を差動型磁気抵抗素子のセ
ンサ部に入れることができるので、電極によるセンサ部
の実効1−ラック幅減少の影響がない。したがって、ト
ラック幅が5〜20μm程度の場合には、従来の磁路を
備えない差動型磁気抵抗素子の出力の2〜5倍以上の出
力が得られる。また、従来の差動型磁気抵抗効果型ヘッ
ドに対して電極部への信号磁界の侵入を低減できるため
、電極部が発生原因となるノイズも低減できる。On the other hand, in the head equipped with the magnetic path shown in the example,
It absorbs the signal magnetic field from the entire track width of the recording medium,
Since almost 100% of this signal magnetic field can be input into the sensor section of the differential magnetoresistive element, there is no effect of reduction in the effective 1-rack width of the sensor section due to the electrodes. Therefore, when the track width is about 5 to 20 μm, an output that is 2 to 5 times higher than that of a conventional differential magnetoresistive element without a magnetic path can be obtained. Further, since it is possible to reduce the intrusion of a signal magnetic field into the electrode section compared to a conventional differential magnetoresistive head, it is also possible to reduce noise caused by the electrode section.
本発明は以上の実施例で説明したように、差動型磁気抵
抗素子への磁路の形成により、記録媒体のトラック幅全
域からの信号磁界を吸い込めるの(7)
で、ヘッド出力の増大がはかれる。この効果は特に記録
I−ラック幅の狭くなるほど効果的で、トラック幅が数
10μm以下の場合には、出力が2〜5倍以上となる。As explained in the above embodiments, the present invention can absorb the signal magnetic field from the entire track width of the recording medium by forming a magnetic path in the differential magnetoresistive element (7), thereby increasing the head output. is measured. This effect is particularly effective as the recording I-rack width becomes narrower, and when the track width is several tens of micrometers or less, the output increases by 2 to 5 times or more.
第1図は本発明の一実施例の磁気ヘッドの要部平面図、
第2図は第1図で示した磁路部分が凹みを有する実施例
の要部肩面図、第3図は第1図で示した磁路部分が2個
に分離されている実施例の要部平面図である。
1・・磁気抵抗素子、2,3.4・・・電極・リード、
5.7.8・・磁路。
(8)FIG. 1 is a plan view of essential parts of a magnetic head according to an embodiment of the present invention;
Fig. 2 is a shoulder view of the main part of the embodiment shown in Fig. 1 in which the magnetic path section has a recess, and Fig. 3 shows the embodiment in which the magnetic path section shown in Fig. 1 is separated into two parts. FIG. 1... Magnetoresistive element, 2, 3.4... Electrode/lead,
5.7.8...Magnetic path. (8)
Claims (1)
を再生する磁気抵抗効果型ツドに於て、センサ部に3個
の端子を備えた差動型磁気抵抗素子の記録媒体対向面側
に記録媒体からの漏れ磁界を導くための磁路が形成され
ていることを特徴とする磁気抵抗効果型ヘッド。 2、請求項1において、磁路が薄膜高透磁率材料からな
ることを特徴とした磁気抵抗効果型ヘッド。 3、請求項1において、磁路の平面寸法が記録媒体との
対向面で記録トラック幅に近い寸法で、差動型磁気抵抗
素子の近傍では、差動型磁気抵抗素子の幅に近い寸法で
あることを特徴とする磁気抵抗効果型ヘッド。 4、請求項1において、磁路から侵入する磁界が磁気抵
抗センサ部に優先的に侵入するようにセンサ後部にも磁
路を有する構造をもつ磁気抵抗効果型ヘッド。 5、請求項1において、磁気抵抗センサを形成する磁気
抵抗効果薄膜と磁路となる薄膜が同一平面上あるいはこ
れに準する位置にあること特徴とする磁気抵抗効果型ヘ
ッド。 6、請求項1において、差動型磁気抵抗効果素子が磁気
抵抗効果薄膜単層よりなり、隣接してバイアス磁界印加
用薄膜が設置されていることを特徴とする磁気抵抗効果
型ヘッド。7、請求項1において、、磁気抵抗効果素子
がバイアス磁界印加用導体薄膜と一体となつた2層膜で
あることを特徴とする磁気抵抗効果型ヘッド。 8、請求項1において、磁路の膜厚が磁気抵抗素子部の
磁気抵抗膜の厚さより大きいことを特徴とする磁気抵抗
素子。 9、請求項1,3において、記録媒体対向面から差動型
磁気抵抗素子に向かう磁路の寸法が連続的に変化してい
ることを特徴とする磁気抵抗効果型ヘッド。 10、請求項1,2において、磁路となる強磁性体がパ
ーマロイ,Fe合金,Co基アモルファス磁性体、セン
ダスト、からなることを特徴とする磁気抵抗効果型ヘッ
ド。 11、請求項1においてフェライトよりなる磁気シール
ドが設置されていることを特徴とする磁気抵抗効果型ヘ
ッド。 12、請求項1において、磁気シールドがパーマロイ、
Coアモルファス磁性体,Fe合金、からなることを特
徴とする磁気抵抗効果型ヘッド。[Claims] 1. In a magnetoresistive device that reproduces recorded signals from a magnetic recording medium using the magnetoresistive effect, there is provided a differential magnetoresistive element having three terminals in a sensor section. A magnetoresistive head characterized in that a magnetic path for guiding a leakage magnetic field from a recording medium is formed on a surface facing the recording medium. 2. A magnetoresistive head according to claim 1, wherein the magnetic path is made of a thin film of high magnetic permeability material. 3. In claim 1, the planar dimensions of the magnetic path are close to the recording track width on the surface facing the recording medium, and close to the width of the differential magnetoresistive element in the vicinity of the differential magnetoresistive element. A magnetoresistive head characterized by: 4. The magnetoresistive head according to claim 1, having a structure in which a magnetic path is also provided at the rear of the sensor so that the magnetic field entering from the magnetic path preferentially enters the magnetoresistive sensor section. 5. The magnetoresistive head according to claim 1, wherein the magnetoresistive thin film forming the magnetoresistive sensor and the thin film forming the magnetic path are on the same plane or in a similar position. 6. A magnetoresistive head according to claim 1, wherein the differential magnetoresistive element is made of a single layer of a magnetoresistive thin film, and a thin film for applying a bias magnetic field is disposed adjacent thereto. 7. A magnetoresistive head according to claim 1, wherein the magnetoresistive element is a two-layer film integrated with a conductor thin film for applying a bias magnetic field. 8. The magnetoresistive element according to claim 1, wherein the film thickness of the magnetic path is greater than the thickness of the magnetoresistive film of the magnetoresistive element portion. 9. A magnetoresistive head according to any one of claims 1 and 3, characterized in that the dimension of the magnetic path from the surface facing the recording medium toward the differential magnetoresistive element changes continuously. 10. A magnetoresistive head according to claims 1 and 2, wherein the ferromagnetic material forming the magnetic path is made of permalloy, Fe alloy, Co-based amorphous magnetic material, or sendust. 11. The magnetoresistive head according to claim 1, further comprising a magnetic shield made of ferrite. 12. In claim 1, the magnetic shield is permalloy,
A magnetoresistive head comprising a Co amorphous magnetic material and an Fe alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27159989A JPH03134810A (en) | 1989-10-20 | 1989-10-20 | Magneto-resistance effect type head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27159989A JPH03134810A (en) | 1989-10-20 | 1989-10-20 | Magneto-resistance effect type head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03134810A true JPH03134810A (en) | 1991-06-07 |
Family
ID=17502325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27159989A Pending JPH03134810A (en) | 1989-10-20 | 1989-10-20 | Magneto-resistance effect type head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03134810A (en) |
-
1989
- 1989-10-20 JP JP27159989A patent/JPH03134810A/en active Pending
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