JPH03132202A - Microwave integrated circuit device - Google Patents

Abstract

PURPOSE:To obtain a microwave integrated circuit device in which oscillation is suppressed and without having the area of a dumping resistor by cutting off a signal line and a bias circuit from the outside with a metallic cover and a metallic carrier electromagnetically, and attaching a dumping resistance value on a connection terminal. CONSTITUTION:The connection terminal 7 which has the dumping resistance value, is sealed in a through hole formed on the metallic carrier 1 with a dielectric, and is connected to the bias circuit 6 on the upper face of the metallic carrier 1, and is connected to a power source circuit 11 on the rear face of the metallic carrier 1. And the metallic cover 2 covers the upper part of a substrate 3 for signal line and the connection terminal 9, and the metallic carrier 1 and the metallic cover 2 cut off a signal line 5 electromagnetically from the outside, and the inside of the metallic carrier 1 and the metallic cover 2 are cut off from a signal frequency. Thereby, it is possible to obtain the microwave integrated circuit device in which no oscillation with an unrequired frequency component occurs, and possible to respond to a state where a high bias current exists, with less effect of the heat generated by the dumping resistor.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a microwave integrated circuit device in which a signal line and a bias circuit composed of a semiconductor element and a microstrip line are mounted on the upper surface of a metal carrier, and is provided with a metal lid. It is.

Conventional technology When using a semiconductor device in a microstrip line, a low-pass filter type that combines a high impedance line with a length of 1/4 wavelength and a low impedance line with a length of 1/4 wavelength is used. A bias circuit is often used, and a damper resistor and a bypass capacitor are often used between the bias circuit and the power supply circuit.

FIG. 2 shows a configuration diagram of a conventional microwave integrated circuit device, in which (a) is a top view, (b) is a sectional view when a metal lid is attached, and (c) is a back view.

In FIG. 2, 51 is a metal carrier, 52 is a metal lid,
53 is a signal line board, 54 is a semiconductor element, 55 is a signal line, 56 is a bias circuit, 57 is a connection terminal, 58 is a power supply printed circuit board, 59 is a damping resistor, 6o is a bypass capacitor, 61 is a through hole, 62 is a This is a power supply circuit.

The signal line 55 and bias circuit 56 are connected to the signal line substrate 5
The signal line substrate 53 is mounted on the upper surface of the metal carrier 51. The bias circuit 56 is a low-pass filter that combines a high impedance line with a narrow line width and a length of a quarter wavelength and a low impedance line with a wide line width and a length of a quarter wavelength.

A power supply printed circuit board 58 is mounted on the back surface of the metal carrier 51, and a power supply circuit 62, a damper resistor 59, and a bypass capacitor 60 are provided on the power supply printed circuit board 58. The lower end of the connection terminal 57, the damper resistor 69, and the power supply circuit 62 are connected in series, and the bypass capacitor 60 has one end connected between the damper resistor 59 and the power supply circuit 62, and the other end connected to the power printed circuit board through the through hole 61. It is connected to the back conductor of 58.

The metal lid 52 covers the upper surfaces of the dielectric substrate 53 and the connecting terminals 58 with the upper surface of the metal carrier 51.

In the conventional microwave integrated circuit device configured as described above, the semiconductor element 54 is supplied with power from the power supply circuit 62 via the damper resistor 59, the connection terminal 57, the bias circuit 56, and the signal line 55. The bias circuit 56 is a low-pass filter, and blocks the signal component transmitted through the signal line 55 from being transmitted to the connection terminal 58, and allows the DC component to pass. The damper resistor 59 attenuates unnecessary frequency components passing through the bias circuit 56 and unnecessary frequency components coming from the power supply circuit 62.

FIG. 3 shows a configuration diagram of another conventional microwave integrated circuit device, in which (a) is a top view and (b) is a sectional view when a metal lid is attached.

In FIG. 3, 71 is a metal carrier, 72 is a metal lid,
73 is a signal line substrate, 74 is a semiconductor element, 75 is a signal line, 76 is a bias circuit, 77 is a connection terminal, 78 is a power supply printed circuit board, 79 is a damping resistor, 80 is a bypass capacitor, and 81 is a power supply circuit.

The signal line 75 and bias circuit 76 are connected to the signal line substrate 7
The signal line substrate 73 is mounted on the upper surface of the metal carrier 71. The bias circuit 76 is a low-pass filter that combines a high impedance line with a narrow line width and a length of a quarter wavelength and a low impedance line with a wide line width and a length of a quarter wavelength.

The damper resistor 79 is a thick film resistor formed on the signal line substrate 73. The power supply printed circuit board 78 is a thick film resistor formed on the back surface of the metal carrier 71.

A power supply printed circuit board 78 is mounted on the back surface of the metal carrier 71, and a power supply circuit 81 is provided on the power supply printed circuit board 78. The upper end of the connection terminal 77 and the damper resistor 79
and a power supply circuit 81 are connected in series, one end of the bypass capacitor 80 is connected between the damper resistor 79 and the power supply circuit 82, and the other end is grounded to the metal carrier 71.

Metal '1! i72 covers the upper ends of the dielectric substrate 73 and the connecting terminals 78 with the upper surface of the metal carrier 71.

In another conventional microwave integrated circuit device configured as described above, the semiconductor element 74 is supplied with power from the power supply circuit 72 via the connection terminal 77, the damper resistor 79, the bias circuit 76, and the signal line 75. The bias circuit 76 is a low-pass filter, and blocks the signal component transmitted through the signal line 75 from being transmitted to the connection terminal 78, and allows the DC component to pass. The damper resistor 79 attenuates unnecessary frequency components passing through the bias circuit 76 and unnecessary frequency components from the power supply circuit 72.

Problems to be Solved by the Invention However, in the conventional configuration as described above, the signal line 7
5 and the damper resistor 79 becomes longer, parasitic oscillation due to unnecessary frequency components is more likely to occur, and unnecessary frequency components are more likely to leak to the outside from the back side.

Further, in other conventional configurations as described above, since the damper resistor 79 is formed of a thick film resistor, it is necessary to increase the area of the damper resistor 79 when the bias current of the semiconductor element is large.

Further, since the damper resistor 79 is connected in a pattern close to the signal line, the heat generated by the damper resistor 79 is easily transmitted to the signal line, and the temperature characteristics tend to be large and the noise figure characteristics are deteriorated.

In view of the above, the present invention provides a microwave integrated circuit including a semiconductor element on the top surface of a metal carrier, suppresses oscillation when applying a bias from the back surface of the metal carrier through a connection terminal, and provides a damper resistor on the substrate. It is an object of the present invention to provide a microwave integrated circuit device having no area.

Means for Solving the Problems The present invention includes a semiconductor element, a signal line substrate having a signal line and a bias circuit formed of microstrip lines on the upper surface, a metal carrier, and a printed circuit board, and a metal carrier and a printed circuit board. Power is supplied from a provided bias circuit through a connection terminal, a bias circuit, and a signal line that penetrate the metal carrier, and the signal line and the bias circuit are electromagnetically isolated from the outside by the metal lid and the metal carrier, and the The microwave integrated circuit device is characterized in that the connection terminal has a damping resistance value.

Effect of the present invention With the above-described configuration, since the connection terminal has a damping resistance value, the distance between the bias circuit and the damping resistance is short, and parasitic oscillation due to unnecessary frequency components is difficult to occur, and unnecessary frequency components are not transmitted to the outside from the back side. There is no possibility of leakage, and since no damper resistor is formed on the signal line substrate, the pattern of the signal line substrate can be determined regardless of the bias current value. Furthermore, the heat generated by the damper resistor is less likely to be directly transmitted to the signal line, making it less likely that temperature characteristics will appear, and the noise figure characteristics will be less likely to deteriorate.

Embodiment FIG. 1 shows a configuration diagram of a microwave integrated circuit device according to an embodiment of the present invention. In FIG. 1, (a) is a top view, (b) is a sectional view when a metal lid is attached, (C) is a front view. In FIG. 1, 1 is a metal carrier, 2 is a metal lid, 3 is a signal line substrate, 4 is a semiconductor element, 5 is a signal line, 6 is a bias circuit, 7 is a connection terminal made of high resistance metal, and 8 is a Power supply printed circuit board, 9 is bypass capacitor,
10 is a through hole, and 11 is a power supply circuit. The signal line 5 is constructed on the signal line substrate 3, and the signal line base F
i3 is mounted on the upper surface of the metal carrier 1. A power supply printed circuit board 8 is mounted on the back surface of the metal carrier 1, and a bypass capacitor 9 and a power supply circuit 11 are provided on the front surface. One end of the bypass capacitor 9 is connected between the connection terminal 7 and the power supply circuit 11, and the other end is grounded via a through hole. Bias circuit 6 is a narrow quarter of the line width
This is a low-pass filter that combines a wavelength-long high-impedance line and a quarter-wavelength low-impedance line with a wide line width. The connection terminal 7 has a damping resistance value, is sealed with a dielectric material in a through hole formed in the metal carrier 1, is connected to the bias circuit 6 on the top surface of the metal carrier 1, and is connected to the bias circuit 6 on the back surface of the metal carrier 1. It is connected to the power supply circuit 11. The metal cover 2 covers the upper part of the signal line substrate 3 and the connection terminal 9, and the metal carrier 1 and metal cover 2 electromagnetically cut off the signal line 5 from the outside, and the metal carrier 1
The inside of the metal lid 2 is cut-off with respect to the signal frequency.

The operation of the microwave integrated circuit device of the first embodiment configured as described above will be explained below.

In FIG. 1, a semiconductor element 4 is connected to a power supply circuit 11 through a connection terminal 7. Bias circuit 6. Power is supplied via the signal line 5. The bias circuit 6 is a low-pass filter, and blocks the signal component transmitted through the signal line 5 from being transmitted to the power supply circuit 11, and allows the DC component to pass.

The connection terminal 7 having a damping resistance value attenuates unnecessary frequency components passing through the bias circuit 6 and unnecessary frequency components coming from the power supply circuit 11. Since the interior of metal M2 and metal carrier 1 is cut-off with respect to the signal frequency,
The signal does not cause feedback in the spatial path,
The length between the bias circuit 6 and the damper resistor is short, so that parasitic oscillation due to unnecessary frequency components is less likely to occur, and the damper resistor is formed on the signal line substrate 3 so that unnecessary frequency components do not leak outside from the back side. Since it is not directly connected to the signal line board 3, the heat generated by the damper resistance component of the connection terminal 7 is transferred to the signal line. It is difficult for the noise figure to be transmitted, and there is less deterioration of characteristics due to temperature characteristics, and there is also less deterioration of noise figure characteristics.

As described above, according to this embodiment, a signal line board is mounted on a metal carrier, a signal line and a bias circuit are provided on the signal line board, and connection terminals are connected from the opposite side of the signal line across the metal carrier. By applying a bias to the semiconductor element through the semiconductor element and having the connection terminal have a damping resistance value, parasitic oscillation due to unnecessary frequency components is less likely to occur, and unnecessary frequency components are not likely to leak to the outside from the back side.

In addition, even when the bias current value is large, there is no need to change the pattern layout of the signal line substrate, and the heat generated by the damper resistor is less likely to be directly transmitted to the signal line, making it difficult for temperature characteristics to appear and reducing noise figure characteristics. There is little deterioration.

Note that although the material of the connection terminal is a high-resistance metal, it goes without saying that any resistor such as a carbon-based resistor may be used.

As described in detail, according to the present invention, it is possible to realize a microwave integrated circuit device that does not cause oscillation due to unnecessary frequency components, can cope with large bias currents, and is less affected by heat generated by damper resistors. , its practical effects are great.

[Brief explanation of the drawing]

FIG. 1 shows a configuration diagram of a microwave integrated circuit device according to an embodiment of the present invention, in which (a) is a top view, (b) is a sectional view when a metal lid is attached, (C) is a back view, Figure 2 shows a configuration diagram of a conventional microwave integrated circuit device, in which (a) is a top view, (b) is a cross-sectional view when a metal lid is attached, and (c)
) is a back view, FIG. 3 is a configuration diagram of another conventional microwave integrated circuit device, (a) is a top view, and (b) is a sectional view when a metal lid is attached. 1... Metal carrier, 2 Metal lid, 3...
・Signal line substrate, 4... Semiconductor element, 5...
...Signal line, 6...Bias circuit, 7.
... Connection terminal made of high resistance metal, 8...
...Power printed circuit board, 9...Bypass capacitor.

Claims (1)

[Claims] A signal line substrate including a semiconductor element, a signal line constituted by a microstrip line, and a bias circuit on the upper surface, a metal carrier, and a printed circuit board, the signal line substrate is provided on the upper surface of the metal carrier, and the signal line substrate is provided on the upper surface of the metal carrier. The printed circuit board is located on the opposite side of the signal line substrate across the metal carrier, and the semiconductor element has connection terminals, bias circuits, and signal lines extending from a bias circuit provided on the printed circuit board through the metal carrier. is powered via
The microwave integrated circuit device is characterized in that the signal line and the bias circuit are electromagnetically isolated from the outside by the metal cover and the metal carrier, and the connection terminal has a damper resistance value.