JPH03130693A - X-ray image sensor - Google Patents
X-ray image sensorInfo
- Publication number
- JPH03130693A JPH03130693A JP1269356A JP26935689A JPH03130693A JP H03130693 A JPH03130693 A JP H03130693A JP 1269356 A JP1269356 A JP 1269356A JP 26935689 A JP26935689 A JP 26935689A JP H03130693 A JPH03130693 A JP H03130693A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- shielding plate
- shield plate
- image sensor
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims description 2
- 239000004840 adhesive resin Substances 0.000 abstract description 10
- 229920006223 adhesive resin Polymers 0.000 abstract description 10
- 239000004020 conductor Substances 0.000 abstract description 5
- 125000006850 spacer group Chemical group 0.000 abstract description 5
- 238000009429 electrical wiring Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 241000207199 Citrus Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000020971 citrus fruits Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、 半導体放射線センサを用いたX線イメージ
センサに関するものであも
従来の技術
従来のX線イメージセンサに用いられているセンサアレ
イブロックは第3図に示すように構成されていも X線
に感応する素子1は、 厚さ約0゜5m八 幅約1m孔
長さ1〜2cm程度のCdTeの単結晶で製作され
その表面を研磨し エツチング処理などを施してから金
の電極2を無電解メツキで形成している力(電極2は、
その仏金などの蒸着薄膜で形成してもより〜 (以艮
この素子l上に形成された電極2を、他の電極との混
同を避ける為に接続電極と称する事にする。)接続電極
2は、 第3図に示すように前記素子−面に島状に複数
個を形成する。素子1の裏面に(部会の電極が全面にわ
たり形成されており、前記の接続電極と相対向して、前
記接続電極のそれぞれに対応して1つづつのセンサ部を
構成すム 裏面に形成される電極ζよ 本実施例では、
この様に接続電極2に対して共通の電極として形成し
ている力丈 接続電極と個々に相対向する電極を独立し
て設ける構成とすることも勿論可能であも さらに素子
1の接続電極2は、 基板4上の電極パターン5と導体
6で接続してあも
この様に構成された第3図に示すセンサブロックが単数
あるいは複数個直列に並べられてアレイを構成すも そ
して、電圧は相対向する上下の電極の間に印加されも
このようなセンサブロックに対し遮蔽板7に設けられた
スリット8CiX線を検出する素子1の接続電極2に相
対するように平行でかつ0.5mm程度の距離をもって
他の部材で支持されていも
発明が解決しようとする課題
しかし 前述の従来技術では、 以下に示すような課題
を有する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an X-ray image sensor using a semiconductor radiation sensor. Although configured as shown in Figure 3, the element 1 sensitive to X-rays is made of a CdTe single crystal with a thickness of about 0.5 m, a hole of about 1 m in width, and a length of about 1 to 2 cm.
After polishing and etching the surface, the gold electrode 2 is formed by electroless plating (electrode 2 is
Even if it is formed with a vapor-deposited thin film of French gold or the like, it is better. 2, as shown in FIG. 3, a plurality of islands are formed on the element surface. On the back surface of the element 1, electrodes of the section are formed over the entire surface, facing oppositely to the connection electrodes, and forming one sensor section corresponding to each of the connection electrodes. Electrode ζ In this example,
Although it is of course possible to provide a configuration in which electrodes facing each other are provided independently from the connection electrode 2, the connection electrode 2 of the element 1 can also be formed as a common electrode. The sensor blocks shown in FIG. 3, which are connected by the electrode pattern 5 on the substrate 4 and the conductor 6 and configured like a duck, are arranged in series to form an array. Even if the voltage is applied between the upper and lower electrodes that face each other,
For such a sensor block, the slit 8C provided in the shielding plate 7 may be parallel to the connecting electrode 2 of the element 1 for detecting X-rays and supported by another member at a distance of about 0.5 mm. However, the above-mentioned conventional technology has the following problems.
すなわtxX線イメージセンサに対して扇型に広がって
入射する所謂ファンビームを用いて、従来のX線イメー
ジセンサによる診断画像を得る場合、X線がかなりの入
射角をもって遮蔽板のスリットに入射する。上記の様に
遮蔽板7と素子1とは0.5mm前後の距離を隔ててい
るた取 上記の様にスリットに対してX線が斜めに入射
する場合においてk そのスリットに対応する接続電極
でX線を受信出来るようにするに(瓜 接続電極の大き
さは スリットの大きさよりも大きくする必要があり、
解像度を向上するさいのネックとなってい九
あるいは、 解像度を上げるために前記接続電極の大き
ま 配列ピッチをを小さくすると、受信X線量の低減
隣接センサ間での信号の漏洩などが発生しX線診断画像
に位置的な濃度変化などの誤差を生じ九
さら鳳 素子1は基板4上に突出している為外部からの
機械的衝撃に弱いという欠点があっ九まな 遮蔽板7と
素子1との間に存在する隙間に異物が入り込へ 装置の
信頼性を低下させる等の問題を有していた
課題を解決するための手段
上記問題点を解決するた八 本発明1i 基板に素子
を埋め込むための溝を設は素子の固着と電気的接続を行
なし\ 遮蔽板は素子に密接させるとともに前記溝の両
壁上面に載置するようにすも作用
上記手段による作用は以下の通りであも 上記手段によ
って、遮蔽板は素子に密接して配設されるために スリ
ットに対して斜めに入射するX線にたいしてL 接続電
極の大きさは遮蔽板のスリットとほぼ同じ大きさで対応
できる。In other words, when obtaining a diagnostic image using a conventional X-ray image sensor using a so-called fan beam that spreads out in a fan shape and enters the tx X-ray image sensor, the X-rays enter the slit of the shielding plate at a considerable angle of incidence. do. As mentioned above, since the shielding plate 7 and the element 1 are separated by a distance of about 0.5 mm, when the X-rays are obliquely incident on the slit as described above, the connection electrode corresponding to the slit is In order to be able to receive X-rays, the size of the connecting electrode must be larger than the size of the slit.
Or, if the connecting electrodes are made larger or the arrangement pitch is made smaller in order to increase the resolution, the amount of received X-rays will be reduced.
Signal leakage occurs between adjacent sensors, causing errors such as positional density changes in X-ray diagnostic images.Because the element 1 protrudes above the substrate 4, it is vulnerable to mechanical shock from the outside. There are many shortcomings: foreign matter can enter the gap between the shielding plate 7 and the element 1, reducing the reliability of the device. To solve the problem, Invention 1i A groove for embedding the element is provided in the substrate to fix the element and make electrical connection.\ The shielding plate is placed in close contact with the element and placed on the upper surfaces of both walls of the groove. The effect of the above means is as follows: Due to the above means, the shielding plate is disposed closely to the element, so that the size of the connecting electrode is L. Approximately the same size as the slit in the board can be used.
さら置 基板に設けた溝に埋め込まれた素子は、外部か
らの機械的衝撃を直接受けにくく、また遮蔽板と素子は
密接しているためく 従来のように異物が両者間に入り
込むことがなり〜実施例
以下に本発明の実施例を図面に基づいて説明する。External placement: Elements embedded in grooves in the substrate are less susceptible to direct mechanical shock from the outside, and because the shielding plate and the element are in close contact, foreign objects cannot get into the space between them as in the conventional method. ~Example Examples of the present invention will be described below based on the drawings.
第1図は、 本発明の1実施例のX線イメージセンサの
構成を示すものである。第1図(上 溝付基板9に素子
1を埋め込み導電性接着樹脂3aで固着と電気的接続を
したセンサブロックを示す図であも 素子1が接着され
る溝底面にはスルーホールが設けられ 素子1の裏面の
接著柑脂3aへの電気的配線は、 このスルーホールを
通して行なわれも 素子1へ 遮蔽板7との対向面には
、 遮蔽板7のスリット8に対応して複数個の分割され
た接続電極2が形成されている。この複数個の接続電極
2と、裏面の共通電極としての導電性接着樹脂3aによ
って、素子1ζよ 実質的には接続電極2の数と同数の
複数個のX線素子として機能すも接続電極2への電気的
接続ζ上 金メツキを行なった銅箔である導体10と導
電性接着樹脂3bとで行なわれも
遮蔽板7ζよ 絶縁スペーサ11を介してスリット8が
接続電極に相対向するように平行に基板9に取り付けで
ある。素子1としてζL CdTeを用いているカミ
その他 シリコン、ゲルマニウム等を用いてもよIl
)。FIG. 1 shows the configuration of an X-ray image sensor according to an embodiment of the present invention. Figure 1 (above) shows a sensor block in which the element 1 is embedded in the grooved substrate 9 and fixed and electrically connected with the conductive adhesive resin 3a.A through hole is provided at the bottom of the groove where the element 1 is bonded. Electrical wiring to the adjoining citrus 3a on the back side of the element 1 is done through this through hole. The plurality of connection electrodes 2 and the conductive adhesive resin 3a as a common electrode on the back surface form a plurality of connection electrodes 2, which are substantially the same in number as the number of connection electrodes 2, from the element 1ζ. The electrical connection to the connecting electrode 2, which functions as an X-ray element, is made by the conductor 10, which is a gold-plated copper foil, and the conductive adhesive resin 3b. It is attached to the substrate 9 in parallel so that the slit 8 faces the connection electrode.Although ζL CdTe is used as the element 1, silicon, germanium, etc. may also be used.
).
導電性接着樹脂3b、導体10の厚み(瓜 通常50μ
m以下であり、この厚みに対応してスペーサ11の厚み
を選定することにより、素子1と遮蔽板7の間隔(上
50〜150μm程で作ることが可能となム
な耘 接続電極2への配線は、 上記の信置 例えば
細いワイヤを遮蔽板7のスリット8を通過させ接続電極
2にボンディングすることによっても可能である。Thickness of conductive adhesive resin 3b and conductor 10 (usually 50μ
m or less, and by selecting the thickness of the spacer 11 in accordance with this thickness, the distance between the element 1 and the shielding plate 7 (upper
The wiring to the connection electrode 2 can be made with a thickness of about 50 to 150 μm, for example
This is also possible by passing a thin wire through the slit 8 of the shielding plate 7 and bonding it to the connection electrode 2.
第2図く 本発明の他の実施例のX線イメージセンサの
構成を示す。素子lへ 基板14への接着面側には 第
1図の接続電極2と同様の複数個の独立した接続電極が
形成されていも 遮蔽板7は素子1には導電性接着樹脂
3で電気的に導通された状態で固着されていも そして
この場合 遮蔽板7は 素子1の裏面に設けられた前記
接続電極の共通電極として作用させるものであ4 また
導電性接着樹脂3はスリット8に対応する部分を除いて
素子1上に塗布されていも さらく 素子1の裏面に独
立して形成された複数個の前記接続電極cL 導電性
接着樹脂などで基板14上に形成された電極パターン1
3に電気的接続を行なっていも
また 遮蔽板γζ上 素子1を埋め込む溝を形成してい
る絶縁スペーサ15にも接着されており、遮蔽板7に加
わる直接的外力ζよ スペーサ15との接着部で打ち消
され 素子1には殆ど及ばな1.%この様な構成にすれ
(′L 遮蔽板7と素子1の間隔は導電性接着樹脂3の
厚みの5〜20μm程度の微小間隔にすることが可能と
なる。Figure 2 shows the configuration of an X-ray image sensor according to another embodiment of the present invention. Even though a plurality of independent connection electrodes similar to the connection electrode 2 in FIG. In this case, the shielding plate 7 acts as a common electrode for the connection electrodes provided on the back surface of the element 1 4 and the conductive adhesive resin 3 corresponds to the slit 8 . A plurality of the connection electrodes cL are formed independently on the back surface of the element 1, even though they are coated on the element 1 except for some parts.The electrode pattern 1 is formed on the substrate 14 using conductive adhesive resin or the like.
Even if the electrical connection is made to the shield plate 7, the insulating spacer 15 that forms the groove in which the element 1 is embedded is also bonded to the shield plate γζ, and the direct external force ζ applied to the shield plate 7 is also bonded to the spacer 15. 1, which is almost as good as element 1. With such a configuration, the distance between the shielding plate 7 and the element 1 can be made as small as about 5 to 20 μm, which is the thickness of the conductive adhesive resin 3.
な叙 この場合板 基板の溝底面く 接続電極に対応し
たスルーホールを設(す、このスルーホールを通してワ
イヤボンディングによって接続電極との電気的な接続を
行なうことも可能である。In this case, a through hole corresponding to the connection electrode is provided at the bottom of the groove of the substrate.It is also possible to make an electrical connection to the connection electrode through this through hole by wire bonding.
発明の詳細
な説明したように本発明によれば X線センサの接続電
極と遮蔽板を密接する事が可能で、また両者を一体化構
造に出来るたム 従来のようにX線ファンビームの入射
方向が変化した場合でもスリット間における感度変化を
生じにくく安定したX線検出が可能となム
また 素子と遮蔽板との間に異物が入り込む事がなく装
置の信頼性を大幅に向上できもさらにX線センサアレイ
ブロックとして小型化が容易にはかれa ま7′−X線
センサの遮蔽板を電極としても併用するという構成は
センサの構成の簡素化の点で効果があもAs described in detail, according to the present invention, it is possible to bring the connecting electrode of the X-ray sensor and the shielding plate into close contact with each other, and also to form an integrated structure for the two. Even when the direction changes, sensitivity changes between the slits are not likely to occur, making stable X-ray detection possible.Also, foreign matter does not get between the element and the shielding plate, greatly improving the reliability of the device. Although it is easy to downsize the X-ray sensor array block, a configuration in which the shield plate of the X-ray sensor is also used as an electrode is possible.
It is more effective in terms of simplifying the sensor configuration.
第1図°(ヨ 本発明の一実施例におけるX線イメー
ジセンサのセンサアレイブロックの構成図 第2図ζよ
本発明の他の実施例におけるセンサアレイブロックの
構成図 第3図は、 従来のX線イメージセンサのセン
サアレイブロックの構成図である。
■・・・素子、 2・・・接続電ff13a、 3b・
導電性接着樹脂 7・・・遮蔽板 8・・・スリット、
4、9、14・・・基板 10・・導体 11、15
・・・絶縁スペーサ、5.13・・・電極パターン。Figure 1 °(y) A configuration diagram of a sensor array block of an X-ray image sensor in one embodiment of the present invention Figure 2 ζ A diagram of a configuration of a sensor array block in another embodiment of the present invention Figure 3 is a diagram of a conventional sensor array block It is a configuration diagram of a sensor array block of an X-ray image sensor. ■... Element, 2... Connection voltage ff13a, 3b.
Conductive adhesive resin 7... Shielding plate 8... Slit,
4, 9, 14...Substrate 10...Conductor 11, 15
...Insulating spacer, 5.13...Electrode pattern.
Claims (3)
リットを有し前記素子に対向しかつ平行に配置されるX
線の遮蔽版とを具備するX線イメージセンサであって、
前記素子は、前記基板に形成された溝に収納されると共
に前記遮蔽版は、前記溝の両壁上面部で支持されたX線
イメージセンサ。(1) An X-ray sensitive element, a substrate holding the element, and an X-ray sensor having a slit and arranged facing and parallel to the element.
An X-ray image sensor comprising: a radiation shielding plate;
The element is housed in a groove formed in the substrate, and the shielding plate is supported by upper surfaces of both walls of the groove.
の電極に接続され、遮蔽版と対向する面上では、複数個
の分割された電極が形成されていることを特徴とする請
求項1記載のX線イメージセンサー。(2) A claim characterized in that the X-ray sensitive element is connected to a common electrode on the surface in contact with the groove bottom, and a plurality of divided electrodes are formed on the surface facing the shielding plate. The X-ray image sensor according to item 1.
版と電気的に接続され、溝底部との接触面側では複数個
に分割された電極が形成されていることを特徴とする請
求項1記載のX線イメージセンサー。(3) The X-ray sensitive element is characterized in that a surface facing the shielding plate is electrically connected to the shielding plate, and a plurality of divided electrodes are formed on the surface in contact with the groove bottom. The X-ray image sensor according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1269356A JP2814614B2 (en) | 1989-10-17 | 1989-10-17 | X-ray image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1269356A JP2814614B2 (en) | 1989-10-17 | 1989-10-17 | X-ray image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03130693A true JPH03130693A (en) | 1991-06-04 |
JP2814614B2 JP2814614B2 (en) | 1998-10-27 |
Family
ID=17471240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1269356A Expired - Fee Related JP2814614B2 (en) | 1989-10-17 | 1989-10-17 | X-ray image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2814614B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7164112B2 (en) | 1997-04-10 | 2007-01-16 | Canon Kabushiki Kaisha | Photoelectric conversion device for reducing radiation noise on large screen sensors |
-
1989
- 1989-10-17 JP JP1269356A patent/JP2814614B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7164112B2 (en) | 1997-04-10 | 2007-01-16 | Canon Kabushiki Kaisha | Photoelectric conversion device for reducing radiation noise on large screen sensors |
US7663082B2 (en) | 1997-04-10 | 2010-02-16 | Canon Kabushiki Kaisha | Photoelectric conversion device for reducing radiation noise on large screen sensors |
Also Published As
Publication number | Publication date |
---|---|
JP2814614B2 (en) | 1998-10-27 |
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