JPH03127872A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPH03127872A JPH03127872A JP1266453A JP26645389A JPH03127872A JP H03127872 A JPH03127872 A JP H03127872A JP 1266453 A JP1266453 A JP 1266453A JP 26645389 A JP26645389 A JP 26645389A JP H03127872 A JPH03127872 A JP H03127872A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- region
- type
- emitting region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、発光半導体装置の構造に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to the structure of a light emitting semiconductor device.
従来の技術
近年、発光半導体装置、たとえば、発光ダイオードはカ
メラの自動焦点あわせのための測距用光源として用いら
れている。これらの光源は遠くまで光が届くことが必要
である。このため発光ダイオードとしては、発光出力が
大きいことと同時に指向性に優れていることが求められ
る。自動焦点あわせ用の発光ダイオードとして発光領域
を制限し、かつ発光ダイオードチップ上に球レンズを搭
載して集光することにより指向性を良くしたものがある
。2. Description of the Related Art In recent years, light-emitting semiconductor devices, such as light-emitting diodes, have been used as distance-measuring light sources for automatic focusing of cameras. These light sources need to be able to reach long distances. Therefore, light emitting diodes are required to have high light emission output and excellent directivity. Some light-emitting diodes for automatic focusing have a limited light-emitting area and have improved directivity by mounting a ball lens on the light-emitting diode chip to condense light.
以下に従来の発光ダイオードについて説明する。A conventional light emitting diode will be explained below.
第３図は従来の発光ダイオードの断面を示すものである
。第３図において、■はｎ形
Ｇａ１−ｘＡｅ ｘＡｓ （ｘ＝０．４） 、２はｎ形
Ｇ ａ＋−ｘＡ（ｌ ｘＡ ｓ （ｘ＝０．２） 、３
はｐ形ＧａＡｓ発光層、４は発光領域、５はｐ形Ｇａ＋
−ｘＡＣｘＡｓ （ｘ＝０．３５） 、６はｎ形Ｇａ＋
−ｘＡ１２ｘＡｓ （ｘ＝０．１７）、７はｐ形不純物
の拡散によりｐ形に転換した
Ｇａｐ−ｘＡｅ、ＸＡｓ （ｘ−０，１７）、８はｐ側
電極、９はｎ側電極、１１は球レンズである。FIG. 3 shows a cross section of a conventional light emitting diode. In Fig. 3, ■ is n-type Ga1-xAe xAs (x=0.4), 2 is n-type Ga1-xAe xA (l xA s (x=0.2), 3
is a p-type GaAs light-emitting layer, 4 is a light-emitting region, and 5 is a p-type Ga+
-xACxAs (x=0.35), 6 is n-type Ga+
-xA12xAs (x=0.17), 7 is Gap-xAe converted to p-type by diffusion of p-type impurity, XAs (x-0,17), 8 is p-side electrode, 9 is n-side electrode, 11 is It is a spherical lens.
発光ダイオードに流れる電流は、ｐ側電極８からｐ形波
散層７を経てｐ形Ｇａ＋−ｘＡｅ ｘＡｓ （ｘ＝０．
３５）５、ｐ形ＧａＡｓ発光層３、ｎ形Ｇ ａ １−Ｘ
Ａ Ｑ、 ｘＡ ｓ ２ 、１、ｎ側電極９へと流れる
。The current flowing through the light emitting diode passes from the p-side electrode 8 through the p-type wave dispersion layer 7 to p-type Ga+-xAe xAs (x=0.
35) 5, p-type GaAs light emitting layer 3, n-type Ga 1-X
A Q, xA s 2 , 1, flows to the n-side electrode 9.
ｐ形Ｇａ１−ｘＡ＆ ｘ Ａｓ （ｘ＝０．３５）５に
入った電流は第２図の中で矢印で示すように拡がりなが
らｐ形ＧａＡｓ発光層３へと流れるが、ｐ形Ｇａ１−ｘ
Ａｆ！ ｘＡｓ （ｘ−〇、３５）５の拡がり抵抗のた
め、ｐ形ＧａＡｓ発光層３のうち電流が流れる領域は制
限され、この領域のみで発光する。The current that entered the p-type Ga1-xA & x As (x=0.35)5 flows to the p-type GaAs light-emitting layer 3 while spreading as shown by the arrow in FIG.
Af! Due to the spreading resistance of xAs (x-〇, 35) 5, the region of the p-type GaAs light emitting layer 3 through which current flows is restricted, and light is emitted only in this region.
この発光領域４で発光した光を球レンズ１１で集光して
、平行光線に近い光にすることにより指向性を上げてい
る。The light emitted from the light emitting region 4 is condensed by a ball lens 11, and the directivity is improved by converting the light into nearly parallel light.
発明が解決しようとする課題
発光領域で発光した光は、上方だけでなく下方へも向か
う。従来の構成では下方へ向かった光は、ｎ形ＧａＩ−
ｘＡｅｘＡｓ（Ｘ−０，４）１とｎ側電極９との界面で
吸収されてしまい、発光した光が有効に発光ダイオード
の外に出てこないために、発光出力が小さいという欠点
があった。Problems to be Solved by the Invention The light emitted from the light emitting region travels not only upward but also downward. In the conventional configuration, the light directed downward is n-type GaI-
Since the emitted light is absorbed at the interface between xAexAs(X-0,4)1 and the n-side electrode 9 and does not effectively exit the light emitting diode, there is a drawback that the emitted light output is small.
本発明は上記従来の課題を解決するもので、発光して下
方に向かった光を有効に外部に取り出し、指向性を保持
した状態で、発光出力を高めた発光ダイオードを提供す
ることを目的とする。The present invention solves the above-mentioned conventional problems, and aims to provide a light emitting diode that effectively extracts the downwardly emitted light to the outside and increases the light emitting output while maintaining the directivity. do.
課題を解決するための手段
この目的を達成するために本発明の発光ダイオードは一
部の領域に電流を狭窄して発光領域を制限した結晶裏面
側に、前記発光領域からの光を中心方向へ反射するよう
な曲面をそなえた構成とした。Means for Solving the Problems In order to achieve this object, the light emitting diode of the present invention constricts the current in a part of the region to limit the light emitting region on the back side of the crystal, and directs light from the light emitting region toward the center. The structure has a reflective curved surface.
作用
この構成により、発光して下方へ向かった光が曲面で発
光領域の中心方向へ反射することにより、下方へ向かっ
た光も有効に球レンズを通して取り出せ、指向性を保っ
たまま発光出力を高めることができる。Effect: With this configuration, the light emitted and directed downward is reflected by the curved surface towards the center of the light emitting area, allowing the downward light to be effectively extracted through the ball lens, increasing the light emitting output while maintaining directivity. be able to.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。第１図は本発明の一実施例における発光ダイオ
ードの断面を示すものである。第１図において、主要部
は第２図の従来例と同しであるが、裏面側に球状の面１
０をそなえている点が異なる。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 shows a cross section of a light emitting diode in one embodiment of the present invention. In Fig. 1, the main parts are the same as the conventional example shown in Fig. 2, but there is a spherical surface 1 on the back side.
The difference is that it has 0.
このような発光ダイオードは第１図を参照して説明する
と、以下のようにして作製される。まず、ｎ形ＧａＡｓ
基板（不図示）上に液相エピタキシャル成長性により、
ｎ形Ｇ ａｌ−ｘＡｅ ｘＡ ５（ｘ＝０．４）１を８
０μｍ、ｎ形
Ｇａ１−ｘＡ＆ ｘ Ａｓ （ｘ＝０．２） ２を１５
μｍ。Such a light emitting diode will be explained with reference to FIG. 1, and is manufactured as follows. First, n-type GaAs
By liquid phase epitaxial growth on a substrate (not shown),
n-type Gal-xAe xA 5 (x=0.4) 1 to 8
0 μm, n-type Ga1-xA & x As (x=0.2) 2 to 15
μm.
ｐ形ＧａＡｓ発光層３を１μｍ、ｐ形
Ｇａ＋−ｘＡｅ ｘ Ａ ｓ （ｘ＝０．３５）５を２
１ｔ ｍ 。The p-type GaAs light emitting layer 3 is 1 μm thick, and the p-type Ga+−xAe x A s (x=0.35) 5 is 2 μm thick.
1tm.
ｎ形Ｇａ１−ｘＡｅｘＡｓ（ｘ＝０．１７＞６を２μｍ
と順次成長する。次にｎ形Ｇａ１−ｘＡｅｘＡｓ（ｘ＝
０．１７）６のうち直径１８０μｍの領域を過酸化水素
とアンモニアの混合液でエツチング除去し、ｎ形Ｇａ１
−ｘＡｅ、Ａｓ （ｘ＝０．１７）６の表面および段差
部にｐ形不純物を拡散することにより１μｍの深さのｐ
形に転換したＧａ１−ｘＡｅｘＡｓ （ｘ＝０．１７）
７を形成する。n-type Ga1-xAexAs (x=0.17>6 2μm
and grow sequentially. Next, n-type Ga1-xAexAs (x=
0.17) A region with a diameter of 180 μm in 6 was removed by etching with a mixture of hydrogen peroxide and ammonia, and n-type Ga1
-xAe, As (x = 0.17) By diffusing p-type impurities on the surface and step part of 6, a p
Ga1-xAexAs (x=0.17)
form 7.
そしてｐ形に転換したＧ ａ １−ｘＡ ｉｌ！ ＸＡ
５（ｘ＝０．１７）７上にＡｅを蒸着しｎ側電極８と
する。ついで前記ｎ形ＧａＡｓ基板（不図示）を過酸化
水素とアンモニアの混合液でエツチング除去し、ｎ形Ｇ
ａＩ−ｘＡｅｘ Ａｓ （ｘ＝０．４）１の裏面にＡ
ｕ ／ Ｇ ｅ合金を蒸着し、フォトリソグラフィ法に
より、表面の直径１８０μｍの段差部とは同心円状に、
直径２ｒ・０μｍの部分でＡ ｕ ／ Ｇ ｅ合金を除
去し、この部分に窓のあいた形状のｎ側電極９を形成す
る。そして直径２００μｍのｎ形ＧａＩ−ｘＡｅｘ Ａ
ｓ （ｘ＝０．４）１の裏面部分を、硫酸、過酸化水素
と水の混合液でエツチングする。この時、円の周辺部は
エツチング速度が速いのに対し中心部は遅いためにエツ
チング部分は第１図に示すような球状の面１０となる。Then, G a 1-xA il! converted to p-type! XA
5 (x=0.17) 7 to form an n-side electrode 8. Next, the n-type GaAs substrate (not shown) is removed by etching with a mixture of hydrogen peroxide and ammonia, and the n-type GaAs substrate (not shown) is removed by etching with a mixture of hydrogen peroxide and ammonia.
aI-xAex As (x=0.4) A on the back side of 1
U/G e alloy was deposited and photolithography was used to form a concentric circle with a stepped portion with a diameter of 180 μm on the surface.
The A u/G e alloy is removed from a portion having a diameter of 2r.0 μm, and an n-side electrode 9 having a window shape is formed in this portion. and n-type GaI-xAex A with a diameter of 200 μm.
Etch the back surface of s (x=0.4)1 with a mixture of sulfuric acid, hydrogen peroxide, and water. At this time, since the etching speed is fast at the periphery of the circle but slow at the center, the etched portion becomes a spherical surface 10 as shown in FIG.
最後に、表面の直径１８０μｍの段差部に球レンズ１１
をエポキシ系の樹脂を用いて接着することにより発光ダ
イオードが作製される。Finally, a ball lens 11 is placed on the stepped portion of the surface with a diameter of 180 μm.
A light emitting diode is produced by bonding the two using an epoxy resin.
電流は、ｐ形に転換したＧａ１−ｘＡｅｘＡｓ（ｘ−０
，１７）７の段差部を経てｐ形Ｇａ＋−ｘＡｅ ｘ Ａ
ｓ （ｘ＝０．３）５の中を拡がりながらｐ形ＧａＡｓ
発光層３へと流れるために、発光領域４は表面の直径１
８０μｍの段差部とは同心円となる。裏面側の球状の面
１０も表面の段差部とは同心円となる領域に形成してい
るため、発光領域４に対しても同心円状の領域となり、
球状の面１０は同心円の中心軸上に中心をもつような球
の面となる。また、エツチング量を適当にすることによ
り、球の中心が発光領域付近もしくは発光領域よりも上
方の光軸−Ｌになるようにすることができる。The current is Ga1-xAexAs (x-0
, 17) p-type Ga+-xAe x A through the step part of 7
p-type GaAs expanding inside s (x=0.3)5
In order to flow into the luminescent layer 3, the luminescent region 4 has a surface diameter of 1
It forms a concentric circle with the step portion of 80 μm. Since the spherical surface 10 on the back side is also formed in an area that is concentric with the stepped portion on the front surface, it is also a concentric area with respect to the light emitting area 4.
The spherical surface 10 is a spherical surface having its center on the central axis of concentric circles. Furthermore, by selecting an appropriate amount of etching, the center of the sphere can be positioned near the light emitting region or on the optical axis -L above the light emitting region.
このように、発光領域の真下には電極を形成せず、また
、この電極のない結晶裏面を球状の面を形成することに
より、発光して下方へ向かった先は、従来例のようにｎ
形Ｇ ａｌ−ｘＡ（！ ｘＡ ５（ｘ＝０．４）１とｎ
側電極９との界面で吸収されることなく、球状の面１０
で反射し、発光領域４の中心方向へ向かう。第２図は、
発光領域４よりも上に中心１２をもつ球状の面１０での
光の反射の例を示したものであり、図中の矢印で示すよ
うに発光領域４の中心方向に反射し、さらに、球レンズ
１１を通って光は外へ取り出せる。In this way, no electrode is formed directly below the light emitting region, and by forming a spherical surface on the back surface of the crystal without this electrode, the downward direction of the light emitted is n
Form Gal-xA (!xA 5(x=0.4)1 and n
The spherical surface 10 is not absorbed at the interface with the side electrode 9.
The light is reflected by the light emitting region 4 and goes toward the center of the light emitting region 4 . Figure 2 shows
This figure shows an example of reflection of light on a spherical surface 10 having a center 12 above the light emitting region 4. As shown by the arrow in the figure, light is reflected toward the center of the light emitting region 4, Light can be taken out through the lens 11.
以上のように本実施例によれば、発光領域に相対する裏
面領域に電極を形成せず、この領域には発光領域の中心
軸上の発光領域にほぼ等しいかもしくは発光領域よりも
上の光軸部に中心をもつような球状の面を形成すること
により、発光して下方に向かった光も有効に外部へ取り
出すことができる。As described above, according to this embodiment, no electrode is formed on the back surface region facing the light emitting region, and this region has a light emitting region that is approximately equal to or above the light emitting region on the central axis of the light emitting region. By forming a spherical surface centered on the shaft, the emitted light directed downward can also be effectively extracted to the outside.
発明の効果
以上のように本発明によれば、発光領域に相対する裏面
領域には電極を形成せず、この領域が発光領域からの光
を発光領域の中心方向へ反射するような曲面とすること
により、発光して下方へ向かった光も有効に外部に取り
出すことができ、指向性を保持したまま、発光出力を高
めた発光半導体装置を実現できる。Effects of the Invention As described above, according to the present invention, no electrode is formed on the back surface region facing the light emitting region, and this region has a curved surface that reflects light from the light emitting region toward the center of the light emitting region. As a result, the light that is emitted and directed downward can be effectively extracted to the outside, and a light emitting semiconductor device with increased light emission output while maintaining directivity can be realized.
第１図は本発明の一実施例発光ダイオードの断面図、第
２図は本発明の一実施例発光ダイオードの光の反射経路
概念図、第３図は従来の発光ダイオードの断面図である
。
１− ＝−ｎ形ＧａＩ−ｘＡｅｘＡｓ （ｘ−〇、４）
、２−−−−−− ｎ形Ｇａｐ−ｘＡｉ！ ｘ Ａｓ
（ｘ＝０．２） 、３・・・・・・ｐ形ＧａＡｓ発光層
、４・・・・・・発光領域、５・・・”・ｐ形Ｇａｐ−
ｘＡ＋２ ｘＡｓ （ｘ＝０．３５）、６−・・・ｎ形
Ｇａ＋−ｘＡ＆ｘ Ａｓ （ｘ＝０．１７）、７−・・
・ｐ形不純物の拡散によりｐ形に転換したＧａ＋−ｘＡ
ｅ ｘ Ａｓ （ｘ＝０．１７） 、８−ｐ側電極、９
・・・・・・ｎ側電極、１０・・・・・・球状の面、１
１・・・・・・球レンズ。FIG. 1 is a sectional view of a light emitting diode according to an embodiment of the present invention, FIG. 2 is a conceptual diagram of a light reflection path of a light emitting diode according to an embodiment of the present invention, and FIG. 3 is a sectional view of a conventional light emitting diode. 1- = -n-type GaI-xAexAs (x-〇, 4)
, 2------- n-type Gap-xAi! x As
(x=0.2), 3... p-type GaAs light emitting layer, 4... light emitting region, 5...'' p-type Gap-
xA+2 xAs (x=0.35), 6-... n-type Ga+-xA&x As (x=0.17), 7-...
・Ga+-xA converted to p-type by diffusion of p-type impurity
e x As (x=0.17), 8-p side electrode, 9
......n-side electrode, 10......spherical surface, 1
1... Ball lens.
Claims (2)
結晶の裏面側に、前記発光領域からの光を中心方向へ反
射する曲面をそなえたことを特徴とする発光半導体装置
。(1) A light-emitting semiconductor device characterized in that a curved surface that reflects light from the light-emitting region toward the center is provided on the back side of a crystal whose light-emitting region is restricted by confining a current in a part of the region.
をもつような球状の面であることを特徴とする請求項１
記載の発光半導体装置。(2) Claim 1 characterized in that the curved surface is a spherical surface having its center at the center position of the light emitting region or on the optical axis.
The light emitting semiconductor device described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266453A JPH03127872A (en) | 1989-10-13 | 1989-10-13 | Light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266453A JPH03127872A (en) | 1989-10-13 | 1989-10-13 | Light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03127872A true JPH03127872A (en) | 1991-05-30 |
Family
ID=17431148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1266453A Pending JPH03127872A (en) | 1989-10-13 | 1989-10-13 | Light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03127872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989108A (en) * | 1996-09-09 | 1999-11-23 | Koyo Machine Industries Co., Ltd. | Double side grinding apparatus for flat disklike work |
-
1989
- 1989-10-13 JP JP1266453A patent/JPH03127872A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989108A (en) * | 1996-09-09 | 1999-11-23 | Koyo Machine Industries Co., Ltd. | Double side grinding apparatus for flat disklike work |
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