JPH03126671A - Composite material - Google Patents
Composite materialInfo
- Publication number
- JPH03126671A JPH03126671A JP1264309A JP26430989A JPH03126671A JP H03126671 A JPH03126671 A JP H03126671A JP 1264309 A JP1264309 A JP 1264309A JP 26430989 A JP26430989 A JP 26430989A JP H03126671 A JPH03126671 A JP H03126671A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- composite material
- face
- vapor deposition
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 238000002441 X-ray diffraction Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 12
- 238000005498 polishing Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016523 CuKa Inorganic materials 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Optical Elements Other Than Lenses (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
（産業上の利用分野）
本発明は、例えば高密度エネルギ光反射Ｉｌ！（高出力
レーザ反射鏡、Ｘ線レーザ反射鏡、ＳＯＲ光用レーザ反
射鏡等）の構成相等として好適に使用される複合相であ
って、特に、基体の表面に炭化珪素の化学蒸着層を形成
してなる複合材に関するものである。(Industrial Application Field) The present invention is applicable to, for example, high-density energy light reflection Il! A composite phase that is suitably used as a constituent phase of (high-power laser reflector, X-ray laser reflector, SOR laser reflector, etc.), and in particular forms a chemical vapor deposition layer of silicon carbide on the surface of the substrate. The present invention relates to a composite material made of
一般に、レーザ反射鏡としては、銅等からなる基材を鏡
面研磨し、その上に金を蒸着させたもの、基材上に使用
波長から算記、設計ｔ、た膜厚の杏層膜をコーティング
して、干ｅ酌果を利用するようにしたもの等が良く知ら
れている。しかし、かかるレーザ反射鏡は、比較的エネ
ルギ密度が小さく月６つ長波長の領域（例えば、可視光
線、赤外線）で使用する場合はともかく、短波長域の高
密度エネルギ光（例えば、真空紫外線、軟Ｘ線）を扱う
場合には鏡面の剥離、歪、無根等を招来し易く、その′
Ｍ応が極めて困難なものであった。
折時、かかる不都合を生じない１ノ一ザ反射鏡として、
焼４’！炭化珪素又はカーボンからなる残棒の表面に高
１ｌｉｌｉ度の炭化珪素を化学蒸２Ｃ”しτなる複合材
を使用したものがｉ］望１１（、さ１ｔ、ている。すか
わち、この１ノ一ザ反射鏡は、炭（ｔ； ”ｖ よｔ、
の化学蒸着層（ＣＶ Ｄ −Ｓｉ Ｃ）を超平ｍ面（Ｒ
Ｍ：： １ ｏ Ａ 以下） ＋：１表面研磨して製作
されるもの１あイ）が、ＣＶ Ｄ −ＳｉＣが劇熱性、
熱伝導性、堅牟１１算の物理的性質に優れ［１つ長波長
域で高圧１・ｊ率４示ずどい−〕ノー光学的性質に優れ
るものである。：）−か１４）、短波長域の高密度エネ
ルギ光を扱う場合にも、上記した不都合を生じることが
ないのである。
このように、上記複合材は耐熱性、熱伝導性。
堅牢性等に極めて優れた表面層を有するものであるとこ
ろから、高密度エネルギ光用反射鏡の構成材等としての
使用価値が極めて高いものである。In general, laser reflecting mirrors are made by mirror-polishing a base material made of copper or the like and depositing gold on it, or by depositing an apricot layer film on the base material with a thickness calculated from the wavelength to be used. It is well known that it is coated with dried eel to make use of it. However, such a laser reflector is not suitable for use in a relatively low energy density and long wavelength region (e.g. visible light, infrared light), but it also uses high-density energy light in a short wavelength region (e.g. vacuum ultraviolet light, infrared light). When handling soft X-rays, it is easy to cause peeling, distortion, rootlessness, etc.
It was extremely difficult to respond. Occasionally, as a single reflector that does not cause such inconvenience,
Grilled 4'! A composite material made by chemically vaporizing high 1lili silicon carbide 2C'' on the surface of the remaining rod made of silicon carbide or carbon is desired. The nozzle reflector is made of charcoal (t; ”v yot,
The chemical vapor deposited layer (CVD-SiC) of ultra-flat m-plane (R
M:: 1 o A (below)
It has excellent physical properties such as thermal conductivity and physical properties [high pressure 1.j ratio of 4 in the long wavelength region, which is difficult to measure], and no optical properties. :)-14) The above-mentioned disadvantages do not occur even when dealing with high-density energy light in a short wavelength range. In this way, the above composite material is heat resistant and thermally conductive. Since it has a surface layer with extremely excellent robustness, it has extremely high utility value as a constituent material of a reflecting mirror for high-density energy light.
しかしながら、従来の複合材にあっては、高純度のＣＶ
Ｄ−８ｉＣが一般に高結晶性で極めて硬いものであるこ
とから、前記した如き超平滑面に表面研磨するためには
多大な労力を必要とする。また、・極めて高い研磨エネ
ルギを必要とすることから、研磨面が損傷し易く、高精
度の平滑面を得ることが困難であった。
そこで、本発明者は種々の試験、研究を繰返すことによ
り、従来の複合材における表面研磨の困難性が炭化珪素
蒸着層の結晶面が無配向となっていることに起因するこ
とを究明し、炭化珪素蒸着層における結晶面を一定の面
に配向させ、臂開面を揃えることによって、より少ない
研磨エネルギで損傷の発生を極力防ぎながら超平滑面に
表面研磨できることを知得した。
本発明は、二のような試験、研究の成果に基づいてなさ
れたもので、炭化珪素の化学蒸着層を容易に且つ高精度
に表面研磨しうる複合材を提供することを目的とするも
のである。However, in conventional composite materials, high purity CV
Since D-8iC is generally highly crystalline and extremely hard, a great deal of effort is required to polish the surface to the ultra-smooth surface described above. In addition, since extremely high polishing energy is required, the polished surface is easily damaged and it is difficult to obtain a highly accurate smooth surface. Therefore, by repeating various tests and research, the present inventor found that the difficulty in surface polishing of conventional composite materials is due to the non-oriented crystal plane of the silicon carbide deposited layer, We have learned that by orienting the crystal planes in the deposited silicon carbide layer in a certain plane and aligning the opening planes, it is possible to polish the surface to an ultra-smooth surface with less polishing energy while minimizing damage. The present invention has been made based on the results of the tests and research mentioned above, and aims to provide a composite material that allows surface polishing of a chemical vapor deposited silicon carbide layer with ease and high precision. be.
この課題を解決した本発明の複合材は、炭化珪素の化学
蒸着層において、特に、結晶面をミラー指数表示におけ
る（２２０）面に配向せしめるようにしたものである。
具体的には、この複合材は基体の表面に高純度のβ型炭
化珪素を化学蒸着して得られるが、その蒸着を行う上に
おいて、ミラー指数表示における（１１１）面及びその
他の面が（２２０）面に配向せしめられるように調製し
たものである。このとき、（２２０）面の（１，１１）
面及びその他の面に対するＸ線回折強度比が、そのピー
ク強度において９９以上となるようにしておくことが好
ましい。蒸着は、例えば蒸着温度１３００〜１５００°
Ｃ９蒸着速度１０−数１０ ｐ ｍ ／ ｈ ＋非酸化
雰囲気の条件下で行うことが好ましい。なお、基体の構
成材料としては、カーボン等を任意に選択することがで
きるが、ＣＶＤ−８ｉＣ本来の特性を最大限有効に発揮
させるためには、焼結炭化珪素を使用することが好まし
い。
［実施例］
焼結炭化珪素からなる基体の表面に純粋のβ型炭化珪素
を化学蒸着し、その蒸着を調製することによって第１図
及び第２図に示す表面形態、Ｘ線回折パターンを呈する
複合材を得た。なお、蒸着は非酸化雰囲気で行い、蒸着
温度は１３５０’Ｃであった。
この実施例の複合材では、第１図及び第２図に示す如く
、炭化珪素蒸着層における結晶面が（２２０）面に強制
的に配向せしめられている。第１図は蒸着層表面をノマ
ルスキー顕微鏡により８００倍に拡大したものであり、
突起して見える部分は（１１１）面である。第２図は炭
化珪素蒸着層（７）Ｘ線回折パター？／ （ＣｕＫ ａ
： ３０ＫＶＸ ３０ｍＡ、＝４
フルスケール： ５０ＫＣＰＳ、スリット： １−１−
０．３．２θ： ２’ ／ｗｉｎ、チャート： ２０ｍ
ｍ／ｍｉｎ、メインビーク強度： ２７ＫＣＰＳ ）を
示しているが、このパターン図から明らかなように、（
２，２０）面の（１１１）面及びその他の面に対するＸ
線回折強度比が、そのピーク強度において９９以上とな
っている。
また比較例として、蒸着条件を異にする以外は上記実施
例と同様にして、第３図及び第４図に示す表面形態、Ｘ
線回折パターン（ＣｕＫα：３０ＫＶＸ３０ｍＡ、フル
スケール： ５ＫＣＰＳ、スリット：１−１−０．３．
２θ： ２″／ｍｉｎ、チャート：２０ｍｍ／ｗｉｎ、
メインビーク強度： １．２ＫＣＰＳ）を呈する複合材
を得た。この複合材は、レーザ反射鏡の構成材として使
用されている従来公知のものである。
この複合材の炭化珪素蒸着層における結晶面は第３図及
び第４図に示す如く無配向となっている。
そして、両複合材の表面における物理的性質及び光学的
性質並びに表面研磨性について比較試験を行ったところ
、耐熱性等の物理的性質及び長波長域での反射率等の光
学的性質については差異は認められなかったが、表面研
磨性については明らかな差異が生じた。すなわち、実施
例のものでは、所定の平滑面（ＲＭＳ １０Å以下）に
研磨するに要した研磨エネルギ、時間等の労力が極めて
少なかったが、比較例のものでは、冒頭に述べた如く高
研磨エネルギを必要とし、多大の労力を要した。
しかも、実施例のものでは、研磨エネルギが小さいこと
から、研磨面には殆ど損傷が認められなかったが、比較
例のものでは研磨面に明瞭な損傷が認められた。
なお、炭化珪素の蒸着層における結晶面を（２２０）面
以外の面に配向させたものについても、表面研磨性につ
いて同様の試験を行ったが、上記実施例のものにおける
ような効果は認められなかった・The composite material of the present invention that solves this problem is one in which the crystal plane in the chemical vapor deposition layer of silicon carbide is oriented to the (220) plane in Miller index representation. Specifically, this composite material is obtained by chemical vapor deposition of high-purity β-type silicon carbide on the surface of a substrate. 220) plane. At this time, (1,11) of (220) plane
It is preferable that the X-ray diffraction intensity ratio of the surface and other surfaces be 99 or more at its peak intensity. For example, the deposition temperature is 1300 to 1500°.
It is preferable to carry out the C9 deposition rate under conditions of 10-several 10 pm/h + non-oxidizing atmosphere. Note that carbon or the like can be arbitrarily selected as the constituent material of the base, but in order to maximize the original characteristics of CVD-8iC, it is preferable to use sintered silicon carbide. [Example] Pure β-type silicon carbide is chemically deposited on the surface of a substrate made of sintered silicon carbide, and the vapor deposition is prepared to exhibit the surface morphology and X-ray diffraction pattern shown in FIGS. 1 and 2. Obtained composite material. Note that the vapor deposition was performed in a non-oxidizing atmosphere, and the vapor deposition temperature was 1350'C. In the composite material of this example, as shown in FIGS. 1 and 2, the crystal plane in the deposited silicon carbide layer is forcibly oriented in the (220) plane. Figure 1 shows the surface of the deposited layer magnified 800 times using a Nomarski microscope.
The part that appears to protrude is the (111) plane. Figure 2 shows silicon carbide deposited layer (7) X-ray diffraction pattern? / (CuKa
: 30KVX 30mA, = 4 Full scale: 50KCPS, Slit: 1-1-
0.3.2θ: 2'/win, chart: 20m
m/min, main peak strength: 27KCPS), but as is clear from this pattern diagram, (
2,20) plane with respect to the (111) plane and other planes
The linear diffraction intensity ratio is 99 or more at its peak intensity. In addition, as a comparative example, the surface morphology shown in FIGS. 3 and 4,
Linear diffraction pattern (CuKα: 30KVX30mA, full scale: 5KCPS, slit: 1-1-0.3.
2θ: 2″/min, chart: 20mm/win,
A composite material exhibiting main beak strength: 1.2KCPS was obtained. This composite material is a conventionally known material used as a component of a laser reflecting mirror. The crystal planes in the silicon carbide vapor deposited layer of this composite material are non-oriented as shown in FIGS. 3 and 4. Comparative tests were conducted on the physical properties, optical properties, and surface abrasiveness of the surfaces of both composite materials, and it was found that there were differences in physical properties such as heat resistance and optical properties such as reflectance in the long wavelength range. However, there was a clear difference in surface polishability. That is, in the example, the amount of polishing energy, time, and effort required to polish to a predetermined smooth surface (RMS 10 Å or less) was extremely low, but in the comparative example, as mentioned at the beginning, high polishing energy was required. , and required a lot of effort. Furthermore, in the examples, almost no damage was observed on the polished surfaces because the polishing energy was small, but in the comparative examples, clear damage was observed on the polished surfaces. A similar test for surface polishing properties was also conducted for silicon carbide vapor deposited layers whose crystal planes were oriented in planes other than the (220) plane, but no effects similar to those in the above examples were observed. There wasn't.
以上の説明から容易に理解されるように、本発明の複合
材は、従来の複合材に比して、より少ない研磨エネルギ
により極めて容易に表面研磨する−
ことができ、研磨面に与える損傷を極力少なくしながら
高精度の平滑面を得ることができるものである。したが
って、本発明によれば、高密度エネルギ光用反射鏡の構
成材等として極めて実用性に富む複合材を提供すること
ができる。As can be easily understood from the above explanation, the composite material of the present invention can be surface-polished extremely easily with less polishing energy than conventional composite materials, and can reduce damage to the polished surface. It is possible to obtain a highly accurate smooth surface while minimizing the number of parts. Therefore, according to the present invention, it is possible to provide a composite material that is highly practical as a constituent material of a reflecting mirror for high-density energy light.
第工図は本発明に係る複合材の表面を８００倍に拡大し
て示すノマルスキー顕微鏡写真、第２図はそのＸ線回折
パターン図であり、第３図は従来の複合材の表面を８０
０倍に拡大して示すノマルスキー顕微鏡写真、第４図は
そのＸ線回折パターン図である。
８−
手続補
正
１天
日
（方式）
１、事件の表示
平成１年特許願第２６４３０９号
２、発明の名称
複合材
３、補正をする者
事件との関係The construction drawing is a Nomarski micrograph showing the surface of the composite material according to the present invention magnified 800 times, FIG. 2 is its X-ray diffraction pattern, and FIG.
A Nomarski micrograph shown at 0x magnification, and FIG. 4 is an X-ray diffraction pattern. 8- Procedural amendment 1 day (method) 1. Indication of the case 1999 Patent Application No. 264309 2. Name of the invention Composite material 3. Person making the amendment Relationship with the case
Claims (1)
蒸着してなる複合材であって、炭化珪素の化学蒸着層に
おいては、結晶面がミラー指数表示における（２２０）
面に配向せしめられていることを特徴とする複合材。A composite material made by chemical vapor deposition of silicon carbide on the surface of a substrate made of sintered silicon carbide, etc. In the chemical vapor deposited layer of silicon carbide, the crystal plane is (220) in the Miller index representation.
A composite material characterized by being oriented in a plane.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1264309A JPH0832591B2 (en) | 1989-10-11 | 1989-10-11 | Composite material |
| US07/672,907 US5106687A (en) | 1989-10-11 | 1991-03-21 | Composite material with chemically vapor deposited layer of silicon carbide formed thereon |
| DE4112114A DE4112114C1 (en) | 1989-10-11 | 1991-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1264309A JPH0832591B2 (en) | 1989-10-11 | 1989-10-11 | Composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03126671A true JPH03126671A (en) | 1991-05-29 |
| JPH0832591B2 JPH0832591B2 (en) | 1996-03-29 |
Family
ID=17401389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1264309A Expired - Fee Related JPH0832591B2 (en) | 1989-10-11 | 1989-10-11 | Composite material |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5106687A (en) |
| JP (1) | JPH0832591B2 (en) |
| DE (1) | DE4112114C1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339080A (en) * | 1992-06-08 | 1993-12-21 | Nippon Pillar Packing Co Ltd | Composite material |
| JPH06174053A (en) * | 1992-12-10 | 1994-06-21 | Honda Motor Co Ltd | Slide surface constituting body |
| WO1999001405A1 (en) * | 1997-07-02 | 1999-01-14 | Nippon Pillar Packing Co., Ltd. | SiC COMPOSITE AND METHOD OF PRODUCTION THEREOF |
| JP2000169298A (en) * | 1998-12-01 | 2000-06-20 | Tokai Carbon Co Ltd | Silicon carbide molded article |
| JP2001107239A (en) * | 1999-08-02 | 2001-04-17 | Tokyo Electron Ltd | CVD-SiC EXCELLENT IN CORROSION RESISTANCE, CORROSION RESISTING MEMBER USING THE SAME, AND TREATMENT DEVICE |
| JP2001203190A (en) * | 2000-01-20 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
| JP2013504095A (en) * | 2009-09-09 | 2013-02-04 | フラオンホファー−ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファオ | Base material made of aluminum-silicon alloy or crystalline silicon, metal mirror, production method thereof and use thereof |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0495570B1 (en) * | 1991-01-16 | 1999-04-28 | Sgl Carbon Composites, Inc. | Silicon carbide fiber reinforced carbon composites |
| JPH0774839B2 (en) * | 1991-09-30 | 1995-08-09 | 東芝セラミックス株式会社 | Mirror for SOR |
| JPH07117605B2 (en) * | 1992-03-13 | 1995-12-18 | 日本ピラー工業株式会社 | Diffraction grating |
| US5425860A (en) * | 1993-04-07 | 1995-06-20 | The Regents Of The University Of California | Pulsed energy synthesis and doping of silicon carbide |
| US5360491A (en) * | 1993-04-07 | 1994-11-01 | The United States Of America As Represented By The United States Department Of Energy | β-silicon carbide protective coating and method for fabricating same |
| JP2918860B2 (en) * | 1997-01-20 | 1999-07-12 | 日本ピラー工業株式会社 | Specular |
| US6206531B1 (en) | 1999-05-25 | 2001-03-27 | Ultramet | Lightweight precision optical mirror substrate and method of making |
| US6332465B1 (en) * | 1999-06-02 | 2001-12-25 | 3M Innovative Properties Company | Face masks having an elastic and polyolefin thermoplastic band attached thereto by heat and pressure |
| EP1143044A4 (en) * | 1999-09-22 | 2009-01-21 | Sumitomo Electric Industries | Coated diamond, method for preparing the same and composite material comprising the same |
| JP3648112B2 (en) * | 1999-11-26 | 2005-05-18 | 東芝セラミックス株式会社 | CVD-SiC free-standing film structure and manufacturing method thereof |
| JP2004107096A (en) * | 2002-09-13 | 2004-04-08 | National Institute For Materials Science | Oriented silicon carbide sintered body and its manufacturing process |
| US20060124693A1 (en) * | 2004-12-15 | 2006-06-15 | Meloni Paul A | Thermally conductive polyimide film composites having high mechanical elongation useful as a heat conducting portion of an electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53146299A (en) * | 1977-05-25 | 1978-12-20 | Sharp Corp | Production of silicon carbide substrate |
| JPS5585468A (en) * | 1978-12-15 | 1980-06-27 | Hitachi Ltd | Silicon carbide sintered body |
| JPS63210276A (en) * | 1987-02-26 | 1988-08-31 | Mitsui Eng & Shipbuild Co Ltd | Member having sic film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6075577A (en) * | 1983-09-30 | 1985-04-27 | Toshiba Corp | Back ornamental article |
| US4608326A (en) * | 1984-02-13 | 1986-08-26 | Hewlett-Packard Company | Silicon carbide film for X-ray masks and vacuum windows |
| EP0221531A3 (en) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
| JPS62197370A (en) * | 1986-02-20 | 1987-09-01 | 日本碍子株式会社 | Silicon nitride sintered body |
| DE3733311A1 (en) * | 1987-10-02 | 1989-04-13 | Philips Patentverwaltung | METHOD FOR PRODUCING A MASK CARRIER FROM SIC FOR X-RAY RAY LITHOGRAPHY MASKS |
-
1989
- 1989-10-11 JP JP1264309A patent/JPH0832591B2/en not_active Expired - Fee Related
-
1991
- 1991-03-21 US US07/672,907 patent/US5106687A/en not_active Expired - Lifetime
- 1991-04-10 DE DE4112114A patent/DE4112114C1/de not_active Revoked
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53146299A (en) * | 1977-05-25 | 1978-12-20 | Sharp Corp | Production of silicon carbide substrate |
| JPS5585468A (en) * | 1978-12-15 | 1980-06-27 | Hitachi Ltd | Silicon carbide sintered body |
| JPS63210276A (en) * | 1987-02-26 | 1988-08-31 | Mitsui Eng & Shipbuild Co Ltd | Member having sic film |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339080A (en) * | 1992-06-08 | 1993-12-21 | Nippon Pillar Packing Co Ltd | Composite material |
| JPH06174053A (en) * | 1992-12-10 | 1994-06-21 | Honda Motor Co Ltd | Slide surface constituting body |
| WO1999001405A1 (en) * | 1997-07-02 | 1999-01-14 | Nippon Pillar Packing Co., Ltd. | SiC COMPOSITE AND METHOD OF PRODUCTION THEREOF |
| JP2000169298A (en) * | 1998-12-01 | 2000-06-20 | Tokai Carbon Co Ltd | Silicon carbide molded article |
| JP2001107239A (en) * | 1999-08-02 | 2001-04-17 | Tokyo Electron Ltd | CVD-SiC EXCELLENT IN CORROSION RESISTANCE, CORROSION RESISTING MEMBER USING THE SAME, AND TREATMENT DEVICE |
| US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
| US7410923B2 (en) | 1999-08-02 | 2008-08-12 | Tokyo Electron Limited | SiC material, semiconductor device fabricating system and SiC material forming method |
| JP2001203190A (en) * | 2000-01-20 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| JP2013504095A (en) * | 2009-09-09 | 2013-02-04 | フラオンホファー−ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファオ | Base material made of aluminum-silicon alloy or crystalline silicon, metal mirror, production method thereof and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0832591B2 (en) | 1996-03-29 |
| US5106687A (en) | 1992-04-21 |
| DE4112114C1 (en) | 1992-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |