JPH0312526A - Noncontact temperature sensor - Google Patents
Noncontact temperature sensorInfo
- Publication number
- JPH0312526A JPH0312526A JP1147396A JP14739689A JPH0312526A JP H0312526 A JPH0312526 A JP H0312526A JP 1147396 A JP1147396 A JP 1147396A JP 14739689 A JP14739689 A JP 14739689A JP H0312526 A JPH0312526 A JP H0312526A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- optical shutter
- pyroelectric body
- output
- pyroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は焦電体を検出部とする非接触温度センサに関
し、特に静止物体の温度測定を行う場合でも外部光チョ
ッパを必要とせず単体で動作可能なようにしようとする
ものである。[Detailed Description of the Invention] "Industrial Application Field" The present invention relates to a non-contact temperature sensor that uses a pyroelectric material as a detection part, and in particular can be used as a stand-alone temperature sensor without the need for an external light chopper even when measuring the temperature of a stationary object. I'm trying to make it work.
「従来の技術」 従来の焦電型非接触温度センサを第３図に示す。"Conventional technology" A conventional pyroelectric non-contact temperature sensor is shown in FIG.
ベース１１上に導電性支持体１２が取付けられ、導電性
支持体１２上に焦電体１３が固定され、焦電体１３の上
面には表面電極１４が形成されている。ベース１１上に
は絶縁性支持体１５を介して電界効果トランジスタ１６
が取付けられ、電界効果トランジスタ１６に表面１ｔｉ
１４が接続され、焦電体１３の出力はインピーダンス変
換されて出力される。ベース１１の焦電体１３側にはカ
バー１７が被され、カバー１７の前面、つまり表面電極
１４と対向する面には赤外線を透過させるシリコン窓１
８が設けられている。ベース１１には端子１９が導出さ
れている。A conductive support 12 is mounted on the base 11, a pyroelectric body 13 is fixed on the conductive support 12, and a surface electrode 14 is formed on the upper surface of the pyroelectric body 13. A field effect transistor 16 is disposed on the base 11 via an insulating support 15.
is attached to the field effect transistor 16, and the surface 1ti
14 is connected, and the output of the pyroelectric body 13 is impedance-converted and output. A cover 17 is placed on the pyroelectric body 13 side of the base 11, and a silicon window 1 that transmits infrared rays is provided on the front surface of the cover 17, that is, the surface facing the surface electrode 14.
8 is provided. A terminal 19 is led out from the base 11.
焦電体１３の表面には自発分極に基く電荷が現われるが
、大気中では浮遊電荷を捕獲して電気的中性になってい
る。焦電体１３の自発分極Ｐｓの大きさは温度によって
変化するため、被測定対象物体から放射される赤外線が
焦電体１３の表面に照射され、吸収されると、焦電体１
３の温度はＴ度から（Ｔ＋ΔＴ）度に変化し、自発分極
の大きさもＰｓからΔＩ’ｓだけ変化し、焦電体１３の
表面に短時間だけ電荷が現われる。この電荷を負荷抵抗
を通して検出することにより、被測定対象物体が放射す
る熱放射エネルギ、即ち被測定対象物体の温度を測定す
ることができる。Charges based on spontaneous polarization appear on the surface of the pyroelectric body 13, but in the atmosphere it captures floating charges and becomes electrically neutral. Since the magnitude of the spontaneous polarization Ps of the pyroelectric body 13 changes depending on the temperature, when the infrared rays emitted from the object to be measured are irradiated onto the surface of the pyroelectric body 13 and absorbed,
The temperature of 3 changes from T degrees to (T+ΔT) degrees, the magnitude of spontaneous polarization also changes from Ps to ΔI's, and charges appear on the surface of the pyroelectric body 13 for a short time. By detecting this charge through a load resistor, it is possible to measure the thermal radiation energy emitted by the object to be measured, that is, the temperature of the object to be measured.
この後焦電体１３の温度が安定すると再度浮遊電荷を捕
獲して表面電荷が観測されなくなる。従ってこの焦電型
被接触温度センサを用いて静止物体の温度を測定するた
めには第４図に示すように焦電型非接触温度センサ２１
の前面側、つまり被測定対象物体２２からの赤外線が入
射される側に光チョッパ２３を配し、被接触温度センサ
２１に入射される赤外線を一定周期で断続させ、常に焦
電体１３に温度変化を与えるようにしている。光チョッ
パ２３は切欠部のある金属円板２４をモータ２５で回転
させ、その金属円板２４により比接触温度センサ２１に
入射する赤外線を断続させる。After this, when the temperature of the pyroelectric body 13 stabilizes, floating charges are captured again and no surface charges are observed. Therefore, in order to measure the temperature of a stationary object using this pyroelectric non-contact temperature sensor, as shown in FIG.
An optical chopper 23 is disposed on the front side of the pyroelectric body 13, that is, on the side where the infrared rays from the object to be measured 22 are incident, and intermittents the infrared rays incident on the temperature sensor 21 to be touched at regular intervals, so that the temperature of the pyroelectric body 13 is always maintained. I'm trying to make a difference. The optical chopper 23 uses a motor 25 to rotate a metal disk 24 having a notch, and the metal disk 24 interrupts the infrared rays incident on the specific contact temperature sensor 21 .
この第４図の構成においては非接触温度センサ２１の出
力は、光チジッパ２３の温度あるいは光チョッパ２３の
周囲温度と、被測定対象物体２２の温度との温度差に依
存するため、光チッッパ２３の温度あるいは光チョッパ
２３の周囲温度を測定する、白金抵抗体などの温度検知
素子２６を非接触温度センサ２１とは独立に設け、非接
触温度センサ２１の出力と温度検知素子２６の出力とを
補償回路２７へ供給して被測定対象物体２２の温度を求
めていた。なお補償回路２７では非接触温度センサ２１
の出力及び温度検知素子２６の出力はそれぞれ増幅器２
８及び２９で増幅された後、加算回路３１へ供給され、
その加算結果が出力回路３２を通じて出力される。In the configuration shown in FIG. 4, the output of the non-contact temperature sensor 21 depends on the temperature difference between the temperature of the optical chipper 23 or the ambient temperature of the optical chopper 23 and the temperature of the object to be measured 22. A temperature sensing element 26 such as a platinum resistor is provided independently of the non-contact temperature sensor 21 to measure the temperature of the optical chopper 23 or the ambient temperature of the optical chopper 23, and the output of the non-contact temperature sensor 21 and the output of the temperature sensing element 26 are The temperature of the object to be measured 22 was determined by supplying the temperature to the compensation circuit 27. Note that in the compensation circuit 27, the non-contact temperature sensor 21
and the output of the temperature sensing element 26 are respectively output from the amplifier 2.
After being amplified by 8 and 29, it is supplied to the adder circuit 31,
The addition result is outputted through the output circuit 32.
「発明が解決しようとする課題」
以上述べたように従来の焦電型非接触温度センサによれ
ば、静止物体の温度を測定する場合、外部に赤外線を断
続するための光チョッパを必要とし、更に、光チョッパ
の温度あるいは光チョッパの周囲温度を検知する温度検
知素子と、その温度検知素子の出力により非接触温度セ
ンサの出力を補償する補償回路とを必要とし、システム
が複雑で大きくなる欠点があった。``Problems to be Solved by the Invention'' As mentioned above, according to the conventional pyroelectric non-contact temperature sensor, when measuring the temperature of a stationary object, an optical chopper is required to intermittent infrared rays to the outside. Furthermore, it requires a temperature detection element that detects the temperature of the optical chopper or the ambient temperature of the optical chopper, and a compensation circuit that compensates the output of the non-contact temperature sensor using the output of the temperature detection element, which has the disadvantage that the system becomes complicated and large. was there.
この発明の目的は外部光チョンパを不要とし、静止物体
の温度測定のためのシステムの容積を著しく小形化でき
る焦電型非接触温度センサを提供することにある。An object of the present invention is to provide a pyroelectric non-contact temperature sensor that does not require an external optical sensor and can significantly reduce the volume of a system for measuring the temperature of a stationary object.
「課題を解決するための手段」
この発明によればパッケージ内において焦電体の前部に
、強誘電性セラミックスと赤外線透過溝Ｔｉ、膜とによ
り構成された光シャッタが設けられる。"Means for Solving the Problems" According to the present invention, an optical shutter made of ferroelectric ceramics, an infrared transmitting groove Ti, and a film is provided in front of a pyroelectric body in a package.
この構成によれば静止物体の温度を測定する場合は光シ
ャッタを制御して焦電体へ入射される赤外線が断続され
、外部光チぢツバを必要とせず、外部光チッッパの温度
あるいは外部光チョッパの周囲温度を測定するための温
度検知素子も必要としない。According to this configuration, when measuring the temperature of a stationary object, the infrared rays incident on the pyroelectric material are interrupted by controlling the optical shutter, eliminating the need for an external light chipper and measuring the temperature of the external light chipper or external light. There is also no need for a temperature sensing element to measure the ambient temperature of the chopper.
「実施例」
第１図にこの発明の実施例を示し、第３図と対応する部
分には同一符号を付けである。ベース１１とカバー１７
とによりパッケージが構成され、そのパッケージ内に焦
電体１３が配されている。この発明においてはパッケー
ジ内において焦電体１３の前部に光シャッタ３３が配さ
れる。つまり光シャッタ３３は焦電体１３とシリコン窓
１８との間に位置し、シリコン窓１８の全面と対向して
、支持部材３４によりベース１１に支持されている。"Embodiment" FIG. 1 shows an embodiment of the present invention, and parts corresponding to those in FIG. 3 are given the same reference numerals. Base 11 and cover 17
A package is constituted by the above, and the pyroelectric material 13 is disposed within the package. In this invention, an optical shutter 33 is arranged in front of the pyroelectric body 13 within the package. That is, the optical shutter 33 is located between the pyroelectric body 13 and the silicon window 18, and is supported by the base 11 by the support member 34, facing the entire surface of the silicon window 18.
光シャッタ３３は第２図に示すように、ＰＬＺＴに代表
される赤外域まで透光性を有する強誘電性セラミックス
３５の両面に赤外線透過導電膜としてシリコン膜３６．
３７が形成されて構成される。As shown in FIG. 2, the optical shutter 33 includes a silicon film 36 as an infrared-transmissive conductive film on both sides of a ferroelectric ceramic 35 typified by PLZT that is transparent up to the infrared region.
37 is formed and configured.
強誘電性セラミ７クス３５は室温で反強誘電相であり、
原文方晶の結晶構造をもつため光学異方性は非常に小さ
く、光透過率は非常に高い。シリコン膜３６．３７を介
して強誘電性セラミックス３５に電圧を印加すると強誘
電性セラミックス３５中には強誘電相が誘起され、光学
異方性の大きい結晶構造となり、入射光は散乱されるよ
うになる。Ferroelectric ceramic 7x35 is in an antiferroelectric phase at room temperature,
Because it has a square crystal structure, its optical anisotropy is extremely small and its light transmittance is extremely high. When a voltage is applied to the ferroelectric ceramic 35 through the silicon films 36 and 37, a ferroelectric phase is induced in the ferroelectric ceramic 35, forming a crystal structure with large optical anisotropy, so that incident light is scattered. become.
強誘電性セラミックス３５に対する印加電圧のオン、オ
フを繰返すことにより強誘電性セラミックス３５は光シ
ャッタとして機能する。By repeatedly turning on and off the applied voltage to the ferroelectric ceramic 35, the ferroelectric ceramic 35 functions as a light shutter.
再び第１図に戻って説明する。光シャッタ３３により断
続された赤外光が焦電体１３に入射される。この焦電体
１３の出力は被測定対象物体と光シャッタ３３との温度
差に依存する。そこで光シャッタ３３に光シャッタ３３
の温度を測定する温度検知素子３８が取付けられ、その
温度検知素子３８の出力と焦電体１３の出力とが補償回
路素子３９へ供給されて温度補償が行われる。補償回路
素子３９は例えば第４図中の補償回路２７を半導体ＩＣ
化したものであり、必要に応じて第３図中の電界効果ト
ランジスタ１６も補償回路素子３９に含める。補償回路
素子３９は絶縁性支持体１５によりベース１１上に取付
けられる。温度検知素子３３８としては例えば熱電対が
用いられる。The explanation will be given by returning to FIG. 1 again. Infrared light interrupted by the optical shutter 33 is incident on the pyroelectric body 13 . The output of the pyroelectric body 13 depends on the temperature difference between the object to be measured and the optical shutter 33. Therefore, the optical shutter 33
A temperature sensing element 38 is attached to measure the temperature of the temperature sensing element 38, and the output of the temperature sensing element 38 and the output of the pyroelectric body 13 are supplied to a compensation circuit element 39 to perform temperature compensation. For example, the compensation circuit element 39 replaces the compensation circuit 27 in FIG. 4 with a semiconductor IC.
The field effect transistor 16 in FIG. 3 is also included in the compensation circuit element 39 if necessary. Compensation circuit element 39 is mounted on base 11 by means of insulating support 15 . For example, a thermocouple is used as the temperature detection element 338.
「発明の効果」
以上述べたようにこの発明によれば強誘電性セラミック
スを用いた光シャッタをパッケージ内に内蔵させること
により、静止物体の測温を行う場合にも、外部光チョッ
パ、その外部光ナヨッパの温度検知素子、外部の補償回
路を不要とし、測定システムを著しく単純化、小形化す
ることができる。"Effects of the Invention" As described above, according to the present invention, by incorporating an optical shutter using ferroelectric ceramics into the package, even when measuring the temperature of a stationary object, the external optical chopper and its external This eliminates the need for the temperature detection element of the optical sensor and an external compensation circuit, making it possible to significantly simplify and downsize the measurement system.
第１図は、二の発明の非接触温度センサの一例を示す断
面図、第２図は第１図中の光シャッタ３３の断面図、第
３図は従来の非接触温度センサを示す断面図、第４図は
従来の非接触温度センサを用いて静止物体の温度を測定
するシステムを示すブロック図である。Fig. 1 is a sectional view showing an example of the non-contact temperature sensor of the second invention, Fig. 2 is a sectional view of the optical shutter 33 in Fig. 1, and Fig. 3 is a sectional view showing a conventional non-contact temperature sensor. , FIG. 4 is a block diagram showing a system for measuring the temperature of a stationary object using a conventional non-contact temperature sensor.
Claims (1)
、 パッケージ内において上記焦電体の前部に、強誘電性セ
ラミックスと赤外線透過導電膜とにより構成された光シ
ャッタが設けられていることを特徴とする非接触温度セ
ンサ。(1) In a non-contact temperature sensor that uses a pyroelectric material as a detection part, an optical shutter made of ferroelectric ceramics and an infrared-transmissive conductive film is provided in front of the pyroelectric material in the package. A non-contact temperature sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1147396A JPH0312526A (en) | 1989-06-09 | 1989-06-09 | Noncontact temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1147396A JPH0312526A (en) | 1989-06-09 | 1989-06-09 | Noncontact temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0312526A true JPH0312526A (en) | 1991-01-21 |
Family
ID=15429331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1147396A Pending JPH0312526A (en) | 1989-06-09 | 1989-06-09 | Noncontact temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0312526A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005352870A (en) * | 2004-06-11 | 2005-12-22 | Hochiki Corp | Heat sensor |
| CN103792011A (en) * | 2014-01-27 | 2014-05-14 | 无锡艾立德智能科技有限公司 | Method and device for compensating for temperature drift through thermal infrared imager in a self-adaptation mode |
-
1989
- 1989-06-09 JP JP1147396A patent/JPH0312526A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005352870A (en) * | 2004-06-11 | 2005-12-22 | Hochiki Corp | Heat sensor |
| JP4603299B2 (en) * | 2004-06-11 | 2010-12-22 | ホーチキ株式会社 | Heat sensor |
| CN103792011A (en) * | 2014-01-27 | 2014-05-14 | 无锡艾立德智能科技有限公司 | Method and device for compensating for temperature drift through thermal infrared imager in a self-adaptation mode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3409848B2 (en) | Thermal infrared detector | |
| KR100205384B1 (en) | Infrared sensor and method of temperature compensation | |
| Kruse | Principles of uncooled infrared focal plane arrays | |
| EP1333504A3 (en) | Monolithically-integrated infrared sensor | |
| NL7907759A (en) | PYRO-ELECTRIC DETECTOR. | |
| JPH0312526A (en) | Noncontact temperature sensor | |
| Choi et al. | Epitaxially grown pyroelectric infrared sensor array for human body detection | |
| JPS637611B2 (en) | ||
| US6437331B1 (en) | Bolometer type infrared sensor with material having hysterisis | |
| JPH11337415A (en) | Radiation temperature detecting element | |
| KR20170135153A (en) | Non-contact infrared temperature sensor module | |
| Watton et al. | Uncooled IR imaging: hybrid and integrated bolometer arrays | |
| JP2003294526A (en) | Laser power detection device | |
| JPH0783756A (en) | Oscillatory type infrared sensor, oscillatory type infrared imager, and infrared-ray detecting method | |
| GB2105460A (en) | Radiation detectors | |
| KR100395618B1 (en) | Thermopile sensor having a temperature revision function | |
| RU2811537C1 (en) | Quartz thermal radiation receiver | |
| JPH0634448A (en) | Radiation thermometer | |
| Kuwano et al. | The Pyroelectric Sensor | |
| KR200282421Y1 (en) | temperature revision equipment of thermopile sensor | |
| KR100395617B1 (en) | temperature revision equipment of thermopile sensor | |
| JPH07151609A (en) | Infrared sensor | |
| JPH11337414A (en) | Radiation temperature detecting element | |
| JPS61187625A (en) | Temperature sensor | |
| JPH0750681Y2 (en) | Temperature-corrected infrared detector |