JPH0312400A - Production of thin film of compound semiconductor - Google Patents
Production of thin film of compound semiconductorInfo
- Publication number
- JPH0312400A JPH0312400A JP14563889A JP14563889A JPH0312400A JP H0312400 A JPH0312400 A JP H0312400A JP 14563889 A JP14563889 A JP 14563889A JP 14563889 A JP14563889 A JP 14563889A JP H0312400 A JPH0312400 A JP H0312400A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- compd
- group
- compound semiconductor
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 150000001875 compounds Chemical class 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 3
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 11
- -1 ether compound Chemical class 0.000 claims description 4
- 229910001849 group 12 element Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000012808 vapor phase Substances 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000002994 raw material Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の産業上利用分野）
本発明は化合物半導体薄膜の製造方法に関し、特にｐ型
伝導特性を有するｎｂ−ＶＩｂ族化合物半導体薄膜の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field of the Invention) The present invention relates to a method for manufacturing a compound semiconductor thin film, and particularly to a method for manufacturing an nb-VIb group compound semiconductor thin film having p-type conductivity.
（従来の技術）
近年青色発光材料として注目されているＺｎＳ、Ｚｎ５
ｅなどの化合物半導体薄膜を製造する方法として、有機
金属気相エピタキシャル成長法（ＭＯＶＰＥ）と呼ばれ
る方法が多く採用されている。(Prior art) ZnS and Zn5 have recently attracted attention as blue light emitting materials.
A method called metal organic vapor phase epitaxial growth (MOVPE) is often adopted as a method for manufacturing compound semiconductor thin films such as e.
このＭＯＶＰＥ法では、例えばジエチル亜鉛［（Ｃ２Ｈ
５） ２Ｚｎｌなどの元素周期表ＩＩｂ族元素を含む有
機金属化合物を気相熱分解し、セレン化水素（Ｈ２Ｓｅ
）などのＶＴｂ族元素を含む化合物と反応させることに
よって、Ｚｎ５ｅなどのＩＩ ｂ −ＶＩ ｂ族化合物
半導体薄膜を基板上に成長させていた。また高い効率の
発光素子を作成するためには伝導性を制御してｐ−ｎ接
合を形成する必要があり、このなめ様々なドーパントが
検討されている０例えばｎ型伝導特性を実現するために
は、Ｇａ、Ｉｎ、ハロゲン元素が検討され、高いキャリ
ア濃度、移動度が達成されている。またｐ型伝導特性を
実現するためにはＬｉなどのＩａ族元素やｖｂ族元素で
あるＰ、Ａｓ、あるいはＮが検討されている。In this MOVPE method, for example, diethylzinc [(C2H
5) Gas-phase pyrolysis of organometallic compounds containing Group IIb elements of the periodic table such as 2Znl to produce hydrogen selenide (H2Se
) A IIb-VIb group compound semiconductor thin film such as Zn5e was grown on a substrate by reacting with a compound containing a VTb group element such as Zn5e. In addition, in order to create a highly efficient light-emitting device, it is necessary to control conductivity to form a p-n junction, and for this purpose various dopants are being studied. Ga, In, and halogen elements have been studied, and high carrier concentration and mobility have been achieved. In addition, in order to realize p-type conduction characteristics, Ia group elements such as Li, and VB group elements such as P, As, or N are being considered.
（発明が解決する問題点）
しかしながら、これまで優れたｐ型伝導特性を付与する
ことは困難であった。その理由としては、Ｐ、Ａｓ元素
を使用すると深い不純物準位を作りやすく、発光波長が
青色ではなくなるためであるとされている。また窒素元
素は浅いアクセプタレベルを作りやすく、青色発光材料
として有望視されているが、ドーピングされた窒素の活
性化率が低く、キャリア濃度が低い問題があった。(Problems to be Solved by the Invention) However, until now it has been difficult to impart excellent p-type conductivity characteristics. The reason for this is said to be that when P and As elements are used, it is easy to create deep impurity levels, and the emission wavelength is no longer blue. In addition, the nitrogen element easily forms a shallow acceptor level and is seen as a promising blue light-emitting material, but there is a problem in that the activation rate of doped nitrogen is low and the carrier concentration is low.
本発明の目的は従来技術の問題点を解決し、優れたｐ型
伝導特性のＩＩｂ −ＶＩｂ族化合物半導体薄膜を得る
ことにある。An object of the present invention is to solve the problems of the prior art and to obtain a IIb-VIb group compound semiconductor thin film having excellent p-type conductivity characteristics.
（問題点を解決するための手段）
本発明は上記目的を達成するためになされたもので、そ
の第１の発明は、反応容器内に元素周期表ＩＩｂ族元素
であるＺｎおよびＣｄよりからなる群から選ばれた一つ
の元素を含む化合物および元素周期表ＶＩｂ族であるＳ
、ＳｅおよびＴｅよりなる群から選ばれた一つの元素を
含む化合物および酸素を含む化合物を気相で導入し、こ
れらを熱分解して前記反応容器中に設置した基板上にＩ
Ｉｂ−ｖｘｂ族化合物半導体薄膜を製造できるようにし
たものである。(Means for Solving the Problems) The present invention has been made to achieve the above-mentioned object, and the first invention is that a reaction vessel containing Zn and Cd, which are elements of Group IIb of the Periodic Table of Elements. Compounds containing one element selected from the group and S which is group VIb of the periodic table of elements
A compound containing one element selected from the group consisting of , Se, and Te and a compound containing oxygen are introduced in a gas phase, and these are thermally decomposed to form I on the substrate placed in the reaction vessel.
It is possible to manufacture an Ib-vxb group compound semiconductor thin film.
また、酸素を含む化合物として、過酸化水素、エーテル
化合物、アルコール化合物を使用するようにしたもので
ある。Moreover, hydrogen peroxide, an ether compound, and an alcohol compound are used as the oxygen-containing compound.
本発明はＺｎ５ｅなどのＩＩｂ−ＶＩｂ族化合物半導体
薄膜のｐ型ドーパントとして酸素が優れているとの知見
（第３６回応用物理学会講演予稿４ｐ−ＺＰ−１２）に
基づいている。この知見はＭＢＥ法で得られたものであ
るが、ＭＯＶＰＥ法での適合性について検討することに
よって本発明は実現されたものである。ＭＯＶＰＥ法は
ＭＢＥ法に比較して、１）装置の信頼性が高い、２）不
純物の取り込みが少ない、３ト原料の補給が容易、４）
量産性がよい、などの利点がある。したがってＭＯＶＰ
Ｅ法で酸素ドーピングが可能になる利点は極めて大きい
。The present invention is based on the knowledge that oxygen is an excellent p-type dopant for IIb-VIb group compound semiconductor thin films such as Zn5e (36th Japan Society of Applied Physics Lecture Proceedings 4p-ZP-12). Although this knowledge was obtained by the MBE method, the present invention was realized by examining the compatibility with the MOVPE method. Compared to the MBE method, the MOVPE method has 1) higher reliability of the equipment, 2) less incorporation of impurities, and 3) easier replenishment of raw materials; 4)
It has advantages such as good mass production. Therefore MOVP
The advantage of being able to perform oxygen doping using the E method is extremely large.
酸素ドーピングを行うためには通常のＭ○■ＰＥ法にお
いて、酸素を含む化合物を反応容器中に導入させればよ
い、こうした酸素含有化合物の例として第１表、第２表
に示すような、過酸化水素、エーテル系酸素含有化合物
、アルコール系酸素含有化合物などの一種以上を使用す
ることができる。In order to perform oxygen doping, it is sufficient to introduce an oxygen-containing compound into the reaction vessel in the normal M○■ PE method. Examples of such oxygen-containing compounds are as shown in Tables 1 and 2. One or more types of hydrogen peroxide, ether-based oxygen-containing compounds, alcohol-based oxygen-containing compounds, etc. can be used.
しかしながら発明はこれらにより限定されるものではな
い、これらの化合物は比較的低温で分解し、結晶中に酸
素を有効に取り込ませることができる。However, the invention is not limited thereto; these compounds decompose at relatively low temperatures and can effectively incorporate oxygen into the crystals.
第１表 エーテル系酸素含有化合物 （１）（以下余白
）
第１表
エーテル系酸素含有化合物
（２）
第１表
エーテル系酸素含有化合物
（４）
第１表
エーテル系酸素含有化合物
（３）
第１表
エーテル系酸素含有化合物
（５）
第２表
アルコール系酸素含有化合物
（１）
第２表
アルコール系酸素含有化合物
（３）
第２表
アルコール系酸素含有化合物
（２）
第２表
アルコール系酸素含有化合物
（４）
本発明で使用する原料化合物は室温で固体のもの、蒸気
圧も低いものもある。従って、実際の使用時においては
原料格納ボンベや配管系を加熱するなどの方策が必要と
なる。室温での液体の原料については従来と同様バブリ
ングにより反応容器中に導入できる。Table 1: Ether oxygen-containing compounds (1) (blank below) Table 1: Ether oxygen-containing compounds (2) Table 1: Ether oxygen-containing compounds (4) Table 1: Ether oxygen-containing compounds (3) 1st Table: Ether-based oxygen-containing compounds (5) Table 2: Alcohol-based oxygen-containing compounds (1) Table 2: Alcohol-based oxygen-containing compounds (3) Table 2: Alcohol-based oxygen-containing compounds (2) Table 2: Alcohol-based oxygen-containing compounds (4) Some of the raw material compounds used in the present invention are solid at room temperature, and some have low vapor pressure. Therefore, during actual use, measures such as heating the raw material storage cylinder and piping system are required. A raw material that is liquid at room temperature can be introduced into the reaction vessel by bubbling as in the conventional method.
以下実施例にしたがって詳しく説明する。A detailed explanation will be given below based on examples.
（実施例１）
第１図は本発明をＺｎ５ｅ化合物半導体薄膜の単結晶膜
の製造に適用した場合の装置の構成を示す系統図である
。同図において、Ｚｎ５ｅ化合物半導体を構成するＺｎ
元素を含む原料である液体のジエチル亜鉛［（Ｃ２Ｈ５
） ２Ｚｎ）］が封入されているバブラー容器Ｓ内に、
ガス流量コントローラー９により流量調節された水素ガ
ス１４をバブリングさせることにより、ジエチル亜鉛を
所要量含む水素ガスを形成する。(Example 1) FIG. 1 is a system diagram showing the configuration of an apparatus when the present invention is applied to manufacturing a single crystal film of a Zn5e compound semiconductor thin film. In the same figure, Zn constituting the Zn5e compound semiconductor
Liquid diethylzinc [(C2H5
) 2Zn)] is sealed in the bubbler container S,
By bubbling the hydrogen gas 14 whose flow rate is adjusted by the gas flow controller 9, hydrogen gas containing the required amount of diethylzinc is formed.
不純物添加用のドーピング化合物、ここでは過酸化水素
を含む容器７内をガス流量コントローラ１０で所定量と
した水素ガスを通過させ、前記ジエチル亜鉛を所要量含
む水素ガスに加えて原料とする。A predetermined amount of hydrogen gas is passed through a container 7 containing a doping compound for impurity addition, here hydrogen peroxide, using a gas flow controller 10, and the diethyl zinc is added to the hydrogen gas containing a required amount to serve as a raw material.
他方、Ｚｎ５ｅ化合物半導体を構成するＳｅ元素を含む
原料であるセレン化水素が充填されているガスボンベ６
より、流量コントローラー１２を介して所要量を供給し
、これに流量コントローラー１１を介して所定流量の水
素ガスを加えて原料として、上記のジエチル亜鉛および
過酸化水素を含む原料ガスと共に、気相で反応容器１内
に導入する。On the other hand, a gas cylinder 6 filled with hydrogen selenide, which is a raw material containing Se element constituting the Zn5e compound semiconductor.
Then, the required amount is supplied via the flow rate controller 12, and a predetermined flow rate of hydrogen gas is added to this via the flow rate controller 11 to form a raw material in the gas phase together with the raw material gas containing diethyl zinc and hydrogen peroxide. Introduced into reaction vessel 1.
反応容器１内にはＧａＡｓ基板３が基板ホルダ２の上に
配置されていて、高周波加熱コイル４により所定の温度
に加熱され、化学気相反応により酸素を含むｐ型溝電性
のＺｎ５ｅ化合物半導体の単結晶薄膜が基板上に形成さ
れる。Inside the reaction vessel 1, a GaAs substrate 3 is placed on a substrate holder 2, heated to a predetermined temperature by a high-frequency heating coil 4, and heated to a p-type groove conductive Zn5e compound semiconductor containing oxygen by a chemical vapor phase reaction. A single crystal thin film of is formed on the substrate.
ＧａＡｓとＺｎ５ｅの格子常数の不整合は１％以下であ
り、良好な単結晶薄膜が形成できる。この格子常数の不
整合は〜５％まで許容され、ＩｎＰ、ＳＬなどが基板と
して使用可能である。The mismatch between the lattice constants of GaAs and Zn5e is 1% or less, and a good single crystal thin film can be formed. This lattice constant mismatch is allowed up to ~5%, and InP, SL, etc. can be used as the substrate.
なお、８はガス流量コントローラー、１３は排気口であ
る。Note that 8 is a gas flow controller, and 13 is an exhaust port.
以上説明した化合物半導体の製造をより具体的に説明す
ると、温度５°Ｃのジエチル亜鉛のバブラー容器５を通
過した２５ｃｃ／分の水素ガスと、温度２０″Ｃの過酸
化水素の容器７を通過した５ｃｃ／分の水素ガスとを、
ＩＪ／分の水素ガスに混合希釈した後の原料ガスを反応
容器１内に導く。To explain in more detail the production of the compound semiconductor described above, 25 cc/min of hydrogen gas passes through a diethyl zinc bubbler container 5 at a temperature of 5°C, and passes through a hydrogen peroxide container 7 at a temperature of 20″C. 5 cc/min of hydrogen gas,
The raw material gas after being mixed and diluted with IJ/min of hydrogen gas is introduced into the reaction vessel 1.
同時に、水素ガスで希釈した５容量％セレン化水素ガス
１００ｃｃ／分の原料ガスをさらにＩＪ／分の水素ガス
に希釈混合した後、反応容器１内に導き、４００℃の温
度に加熱されたＧａＡｓ基板３に吹き付けることにより
酸素を含むＺｎ５ｅ単結晶薄膜を１時間当たり２μｍの
速度で成長させた。得られたＺｎ５ｅ単結晶薄膜の表面
は、良好な鏡面が形成され結晶性にも問題はなかった。At the same time, 100 cc/min of 5 volume % hydrogen selenide gas diluted with hydrogen gas was further diluted and mixed with IJ/min of hydrogen gas, and then introduced into the reaction vessel 1 and heated to a temperature of 400°C. By spraying onto the substrate 3, a Zn5e single crystal thin film containing oxygen was grown at a rate of 2 μm per hour. A good mirror surface was formed on the surface of the obtained Zn5e single crystal thin film, and there was no problem in crystallinity.
また、Ｚｎ５ｅ単結晶薄膜の抵抗値は、過酸化水素を添
加しない場合および酸素以外のドーパントであるＡｓや
Ｐを含む場合には１０６Ω・ｃｍ以上の高抵抗であった
のに対し、過酸化水素を使用した場合には数十Ω・ｍ以
上の低い抵抗値を示した。In addition, the resistance value of the Zn5e single crystal thin film was as high as 106 Ω・cm or more when hydrogen peroxide was not added and when As and P, which are dopants other than oxygen, were added. When used, it showed a low resistance value of several tens of Ω·m or more.
ｐ型キャリア濃度は１０１６個／ｃｍ ３以上であり、
従来のアンモニアを窒素原料として用いた場合に比べて
１桁以上添加量を増すことができた。The p-type carrier concentration is 1016 pieces/cm3 or more,
Compared to the conventional case where ammonia was used as the nitrogen raw material, the amount added could be increased by one order of magnitude or more.
なお、不純物を添加する際に不純物メモリー効果（次回
の半導体薄膜成長へ及ぼす効果）が重要なファクターと
なるが、本実施例においては、過酸化水素のステンレス
配管への付着性が小さいため、この点においては何等問
題が生じなかった。Note that when adding impurities, the impurity memory effect (effect on the next semiconductor thin film growth) is an important factor, but in this example, since the adhesion of hydrogen peroxide to the stainless steel piping is small, this No problems occurred in this respect.
（実施例２〜４）
実施例１において過酸化水素の替わりに第３表の原料お
よび条件を使用する他は同様にしてＺｎ５ｅ薄膜の成長
を行った。いずれの場合においても実施例１と同様、優
れた特性のＺｎ５ｅ単結晶薄膜が得られた。(Examples 2 to 4) Zn5e thin films were grown in the same manner as in Example 1 except that the raw materials and conditions shown in Table 3 were used instead of hydrogen peroxide. In any case, as in Example 1, a Zn5e single crystal thin film with excellent properties was obtained.
（以下余白）
第３表
実施例２〜４での成長条件
（発明の効果）
以上説明したように、本発明に係る化合物半導体薄膜の
製造方法によれば、酸素を含有した化合物を使用してい
るため、ＩＩｂ −ＶＩｂ族化合物半導体薄膜の製造に
おいては、青色発光を示す高品質のｐ型伝導性の化合物
半導体薄膜が得られる利点がある。(Margin below) Table 3 Growth conditions in Examples 2 to 4 (effects of the invention) As explained above, according to the method for producing a compound semiconductor thin film according to the present invention, an oxygen-containing compound is used. Therefore, in the production of a IIb-VIb group compound semiconductor thin film, there is an advantage that a high quality p-type conductive compound semiconductor thin film that emits blue light can be obtained.
第１図は本発明の実施例において用いたＺｎ５ｅ単結晶
薄膜の製造装置の構成を示す系統図を示す。
１・・・反応容器、２・・・基板ホルダ、３・・・Ｇａ
Ａｓ基板、４・・・高周波加熱コイル、５・・・バブラ
ー容器、６・・・セレン化水素のガスボンベ、７・・・
酸素を含有した亜鉛系有機金属化合物の容器、８，９，
１０，１１．１２・・・水素ガス、１３・・・排気口、
１４・・・水素ガス。FIG. 1 shows a system diagram showing the configuration of a Zn5e single crystal thin film manufacturing apparatus used in an example of the present invention. 1... Reaction container, 2... Substrate holder, 3... Ga
As substrate, 4... High frequency heating coil, 5... Bubbler container, 6... Hydrogen selenide gas cylinder, 7...
Container for zinc-based organometallic compound containing oxygen, 8,9,
10,11.12...Hydrogen gas, 13...Exhaust port,
14...Hydrogen gas.
Claims (2)
よびＣｄよりからなる群から選ばれた一つの元素を含む
化合物および元素周期表VIｂ族であるＳ、ＳｅおよびＴ
ｅよりなる群から選ばれた一つの元素を含む化合物およ
び酸素を含む化合物を気相で導入し、これらを熱分解し
て前記反応容器中に設置した基板上にIIｂ−VIｂ族化合
物半導体薄膜を製造することを特徴とする化合物半導体
薄膜の製造方法。(1) A compound containing one element selected from the group consisting of Zn and Cd, which are Group IIb elements of the Periodic Table of Elements, and S, Se, and T, which are Group VIb elements of the Periodic Table of Elements, in the reaction vessel.
a compound containing one element selected from the group consisting of 1. A method for manufacturing a compound semiconductor thin film.
テル化合物、アルコール化合物を使用することを特徴と
する特許請求の範囲第１項記載の化合物半導体薄膜の製
造方法。(2) The method for manufacturing a compound semiconductor thin film according to claim 1, wherein hydrogen peroxide, an ether compound, or an alcohol compound is used as the oxygen-containing compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14563889A JPH0312400A (en) | 1989-06-08 | 1989-06-08 | Production of thin film of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14563889A JPH0312400A (en) | 1989-06-08 | 1989-06-08 | Production of thin film of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0312400A true JPH0312400A (en) | 1991-01-21 |
Family
ID=15389642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14563889A Pending JPH0312400A (en) | 1989-06-08 | 1989-06-08 | Production of thin film of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0312400A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003516304A (en) * | 1999-12-11 | 2003-05-13 | エピケム リミテッド | Method and apparatus for supplying a precursor to a plurality of epitaxial reactor sections |
-
1989
- 1989-06-08 JP JP14563889A patent/JPH0312400A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003516304A (en) * | 1999-12-11 | 2003-05-13 | エピケム リミテッド | Method and apparatus for supplying a precursor to a plurality of epitaxial reactor sections |
| JP2011137235A (en) * | 1999-12-11 | 2011-07-14 | Sigma Aldrich Co | Method for bulk supply of organometallic precursor to a plurality of epitaxial reactor sites |
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