JPH03120869A - Image reader - Google Patents
Image readerInfo
- Publication number
- JPH03120869A JPH03120869A JP1259532A JP25953289A JPH03120869A JP H03120869 A JPH03120869 A JP H03120869A JP 1259532 A JP1259532 A JP 1259532A JP 25953289 A JP25953289 A JP 25953289A JP H03120869 A JPH03120869 A JP H03120869A
- Authority
- JP
- Japan
- Prior art keywords
- light
- waveguide
- light irradiation
- layer
- irradiation system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 5
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- 239000000758 substrate Substances 0.000 abstract description 13
- 239000012792 core layer Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000003190 augmentative effect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 20
- 238000005253 cladding Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、ファクシミリ等に使用される画像読み取り素
子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an image reading element used in facsimiles and the like.
ファクシミリが普及するにつれ、写真や細かい図面等も
鮮明に送信できる製品が望まれている。As facsimiles become more widespread, products that can clearly transmit photographs, detailed drawings, etc. are desired.
画像の高品位化のためには、原稿を読み取る、いわゆる
画像読み取り素子の高分解能化が不可欠となる。In order to improve the quality of images, it is essential to increase the resolution of so-called image reading elements that read documents.
画像読み取り素子の高分解能化の妨げとなる大きな要因
に１画像読み取り素子の光照射系と、光受光系の間に、
迷光が存在することが挙げられる。One of the major factors that hinders the improvement of the resolution of image reading elements is that there is a problem between the light irradiation system and the light receiving system of the image reading element.
One example is the presence of stray light.
これを少し詳しく説明すると、第１図に示すように１本
来原稿面に照射した光は原稿面で原稿の濃淡に応じて光
が反射され、受光素子まで導かれる。しかしながら、光
源から出射した光の一部は第１図に示すように薄膜の界
面で反射され、直接受光素子に入射してしまう光が発生
する。これをいわゆる迷光と呼ぶ。To explain this in a little more detail, as shown in FIG. 1, light originally irradiated onto the document surface is reflected by the document surface according to the density of the document and is guided to a light receiving element. However, a portion of the light emitted from the light source is reflected at the interface of the thin film, as shown in FIG. 1, and some light is directly incident on the light receiving element. This is called stray light.
迷光が存在すると受光素子が受ける光電流が、原稿の濃
淡だけにはよらなくなり、分解能が劣化する。When stray light is present, the photocurrent received by the light receiving element no longer depends solely on the density of the document, resulting in degraded resolution.
この迷光による分解能の劣化を防ぐ目的で、光照射系と
光受光系に光導波路を用いる方式が提案されている（特
開昭６１−１００７３号、特開昭５８−１０６９４７号
）。In order to prevent the resolution from deteriorating due to this stray light, a system has been proposed in which optical waveguides are used in the light irradiation system and the light receiving system (Japanese Patent Laid-Open Nos. 61-10073 and 58-106947).
しかし、これらの提案では、光源と導波路とのアセンブ
リが必要であったり、受光素子が導波路端面に、端面を
覆うように形成されていることにより製造工程が複雑で
あったりするという欠点を有し、画像読み取り素子の小
型化、低コスト化は困難であった。However, these proposals have the drawbacks that assembly of the light source and waveguide is required, and that the manufacturing process is complicated because the light receiving element is formed on the end face of the waveguide so as to cover the end face. However, it has been difficult to reduce the size and cost of image reading elements.
本発明の目的は、このような従来の欠点に鑑み、光導波
路を光照射系及び光受光系に用いるメリットを生かし、
且つ、小型化、低コスト化が可能な画像読み取り素子の
構成を提案することにある。The purpose of the present invention is to take advantage of the advantages of using an optical waveguide in a light irradiation system and a light reception system, in view of such conventional drawbacks, and to
Another object of the present invention is to propose a configuration of an image reading element that can be made smaller and lower in cost.
本発明は、発光層及び光導波路からなる光照射系と、光
電変換層及び光導波路からなる光受光系を有する画像読
み取り素子において、光照射系及び光受光系のそ、れぞ
れの導波路が導波路外方から断面中心に向い屈折率分布
が連続的あるいは非連続的に増大するものであると共に
、前記発光層が光慮波路内部に位置することを特徴とす
る画像読み取り素子に関する。The present invention provides an image reading element having a light irradiation system consisting of a light emitting layer and an optical waveguide, and a light reception system consisting of a photoelectric conversion layer and an optical waveguide, in which each waveguide of the light irradiation system and the light reception system is The present invention relates to an image reading element, wherein the refractive index distribution increases continuously or discontinuously from the outside of the waveguide toward the center of the cross section, and the light emitting layer is located inside the optical waveguide.
前記光照射系あるいは前記光受光系の光導波路の屈折率
分布が非連続的である場合においては、導波路の断面中
心に位置する層をコア層、外側に位置する層をクラッド
層と呼ぶ場合、クラッド層として空気あるいは透明基板
を用いることができる。When the refractive index distribution of the optical waveguide of the light irradiation system or the light reception system is discontinuous, the layer located at the center of the cross section of the waveguide is called the core layer, and the layer located outside is called the cladding layer. , air or a transparent substrate can be used as the cladding layer.
本発明の原理を第２図を用いて説明する。The principle of the present invention will be explained using FIG. 2.
まず、基板１上に光照射系の導波路が形成され、導波路
中には発光素子２が形成される。次に光照射系の導波路
上に光受光系の導波路が形成され、光受光系の導波路中
にあるいは導波路に面して光電変換素子３が形成される
。First, a waveguide for a light irradiation system is formed on a substrate 1, and a light emitting element 2 is formed in the waveguide. Next, a waveguide for a light receiving system is formed on the waveguide for the light irradiation system, and a photoelectric conversion element 3 is formed in or facing the waveguide for the light receiving system.
光照射系及び光受光系の導波路は、コアＷＪ５及びクラ
ッド層４から構成されており、コア層Ｓ中の光はクラッ
ド層４で閉じ込められ、導波路中を伝搬する。The waveguides of the light irradiation system and the light reception system are composed of a core WJ5 and a cladding layer 4, and the light in the core layer S is confined by the cladding layer 4 and propagates in the waveguide.
発光素子２が導波路中に形成されているため、発光素子
２から出射された光の内、多くの光が導波路コア層５と
クラッド層４の界面で全反射を繰り返し、導波路端面が
ら原稿１ｏ面に照射される。原稿面から反射された光は
光受光系の導波路に入射し、全反射を繰り返し光電変換
素子３を含む受光部に到達し、光電流として検出される
。Since the light-emitting element 2 is formed in the waveguide, much of the light emitted from the light-emitting element 2 is repeatedly totally reflected at the interface between the waveguide core layer 5 and the cladding layer 4, and is reflected from the waveguide end face. The light is irradiated onto the surface of the original 1o. The light reflected from the document surface enters the waveguide of the light receiving system, undergoes repeated total reflection, reaches the light receiving section including the photoelectric conversion element 3, and is detected as a photocurrent.
本発明で示される画像読み取り素子は、特開昭５８−１
０６９４７号、特開昭６１−１０００７３号に較べて、
以下に示す効果がある。第一に画像読み取り素子に必要
な光源１１及び光検出素子が同一平面上に、順次形成で
きるため１画像読み取り素子の小型化、低コスト化が実
現できる。The image reading element shown in the present invention is disclosed in Japanese Patent Application Laid-Open No. 58-1
Compared to No. 06947 and JP-A-61-100073,
It has the following effects. First, since the light source 11 and the photodetecting element necessary for the image reading element can be formed sequentially on the same plane, it is possible to realize miniaturization and cost reduction of one image reading element.
第二に導波路光出射端、原稿面、導波路光入射端の位置
関係が、非常に近接させることができるため、発光素子
から出射される光の利用効率が高くなる。Second, since the waveguide light output end, the document surface, and the waveguide light input end can be positioned very close to each other, the utilization efficiency of the light emitted from the light emitting element is increased.
加えて、前記公報記載の技術と同様光照射部、光受光部
共に、光導波路を用いているため、先に述べた迷光の影
響が少なくなり、画像読み取り素子の高分解能化が実現
できる。In addition, like the technology described in the above-mentioned publication, since optical waveguides are used for both the light irradiation section and the light reception section, the influence of the stray light mentioned above is reduced, and high resolution of the image reading element can be realized.
第３図に本発明の別の構成を示す。第２図で示した構成
と違うのは、光受光系の導波路と光照射系の導波路の間
に遮光層６を設けた点であるにの構成においては１発光
素子部Ｈと光電変換素子３を備えた受光部Ｒを近接させ
た構成においても、迷光の影響を防ぐことができるとい
う特徴を持つ。FIG. 3 shows another configuration of the present invention. The difference from the configuration shown in Fig. 2 is that a light shielding layer 6 is provided between the waveguide of the light receiving system and the waveguide of the light irradiation system. Even in a configuration in which the light receiving section R including the element 3 is placed close to each other, the influence of stray light can be prevented.
第４図に本発明のさらに別の構成を示す。第２図、第３
図で示した構成と違うのは、基板２上に、最初に光受光
系を形成し、その後、光照射系を形成する点にある。本
構成の特徴は、例えば、薄膜プロセスで光電変換素子３
及びその駆動素子を形成する際、５００℃以上の高温プ
ロセスが必要となり、かつ発光素子の特性が高温での温
度履歴に影響される場合、この様な構成が望ましい。FIG. 4 shows yet another configuration of the present invention. Figures 2 and 3
The difference from the configuration shown in the figure is that a light receiving system is first formed on the substrate 2, and then a light irradiating system is formed. The feature of this configuration is that, for example, the photoelectric conversion element 3 is formed using a thin film process.
Such a configuration is desirable when a high-temperature process of 500° C. or higher is required to form the driving element and the characteristics of the light-emitting element are affected by the temperature history at high temperatures.
逆に、発光素子を薄膜プロセスで形成する際の温度履歴
が受光素子の特性に影響を及ぼす場合は、第２．３図で
示した構成が望ましい。On the other hand, if the temperature history when forming the light emitting element by a thin film process affects the characteristics of the light receiving element, the configuration shown in FIG. 2.3 is preferable.
第５図に、本発明のさらに別の構成を示す。FIG. 5 shows yet another configuration of the present invention.
本構成と第２〜４図で示した構成の違いは、光照射系と
光受光系をそれぞれ別の基板１，１′上に形成し、その
後に貼り合せを行うことにより光照射系と光受光系を一
体化させた点にある。The difference between this configuration and the configurations shown in Figures 2 to 4 is that the light irradiation system and the light reception system are formed on separate substrates 1 and 1', respectively, and then they are bonded together. The key point is that the light receiving system is integrated.
本構成の特徴は、光照射系及び光受光系を薄膜プロセス
で形成する際、それぞれの温度履歴がそれぞれの特性に
影響を及ぼす場合は、この様な構成にするのが望ましい
。The feature of this configuration is that when forming the light irradiation system and the light reception system by a thin film process, such a configuration is desirable if the temperature history of each affects the characteristics of each.
又、本構成の別の特徴は第６図に示す。光照射系と光受
光系の基板を貼り合せる際、角度をもたせて貼り合せる
ことが可能なため光照射系から原稿へ出射された光の内
、光受光系に取り込まれる光の量を多くすることができ
る。Another feature of this configuration is shown in FIG. When bonding the light irradiation system and light receiving system substrates, it is possible to attach them at an angle, increasing the amount of light that is emitted from the light irradiation system to the document and taken into the light receiving system. be able to.
第７図に、本発明のさらに別の構成を示す。FIG. 7 shows yet another configuration of the present invention.
本構成の特徴は、光照射系および、あるいは、光受光系
の導波路端面が、原稿面に対して斜めに対峙している点
にある。この構成を取れば。A feature of this configuration is that the waveguide end face of the light irradiation system and/or the light reception system faces obliquely to the document surface. If you take this configuration.
光照射系及びあるい光受光系の原稿に対する光軸中心が
導波路光軸に対して傾けることができ、光照射系から原
稿へ出射された光のうち、光受光系に取り込まれる光の
量を多くすることができる。The center of the optical axis of the light irradiation system and/or light receiving system for the document can be tilted with respect to the optical axis of the waveguide, and the amount of light that is taken into the light receiving system out of the light emitted from the light irradiation system to the document. can be increased.
本発明で用いられる材料としては、基板材料としては、
アルミナ、ＡρＮ、ＢＮ、石英ガラス、パイレックスガ
ラス等が挙げられる。尚基板材として、発光素子の発光
波長に対して透明で、かつコア層の屈折率よりも屈折率
が低い場合には、基板自体をクラッド層として用いるこ
ともできる。同様の理由で空間、又は接着層をクラッド
層として用いることもできる。The materials used in the present invention include the following substrate materials:
Examples include alumina, AρN, BN, quartz glass, and Pyrex glass. Note that if the substrate material is transparent to the emission wavelength of the light emitting element and has a refractive index lower than the refractive index of the core layer, the substrate itself can also be used as the cladding layer. For similar reasons, a space or an adhesive layer can also be used as a cladding layer.
又、光導波路材料としてはＭｇＯ，５ｉｎ２、Ｓ ｉ３
Ｎ４．３ｉＯＮ薄膜や薄板ガラス等が用いられる。In addition, as the optical waveguide material, MgO, 5in2, Si3
N4.3iON thin film, thin glass, etc. are used.
今まで述べた光導波路は、コア層及びクラッド層から形
成されるものについてであったが、本発明には光ファイ
バー等ですでに実現されているような光導波路層の屈折
率を導波路中心から外側に向って連続的に減少させるよ
うにした、いわゆる屈折率分布型光導波路も含まれる。The optical waveguides described so far have been formed from a core layer and a cladding layer, but in the present invention, the refractive index of the optical waveguide layer, which has already been realized in optical fibers, etc. can be changed from the center of the waveguide. Also included is a so-called gradient index optical waveguide in which the refractive index decreases continuously toward the outside.
この場合、発光層は屈折率分布型導波路内部に形成すれ
ば良い。In this case, the light emitting layer may be formed inside the gradient index waveguide.
又、発光素子としては、ＥＬ、ＬＥＤ、レーザーダイオ
ード等が挙げられる。さらに光電変換素子としては、Ｃ
ｄＳ、アモルファスシリコン、ＰＩＮフォトダイオード
、ＣＣＤ、ＳＩＴ等が挙げられる。Furthermore, examples of the light emitting element include EL, LED, laser diode, and the like. Furthermore, as a photoelectric conversion element, C
Examples include dS, amorphous silicon, PIN photodiode, CCD, and SIT.
又、遮光層材料としては、ＡＱ、Ｃｒ、Ｍ。Further, as the light-shielding layer material, AQ, Cr, M may be used.
Ｓｉ、ＷＳｉ等の金属系薄膜が挙げられる。Examples include metal thin films such as Si and WSi.
本発明において、発光素子としてＥＬ素子を。 In the present invention, an EL element is used as a light emitting element.
光電変換素子してａ−８ｉ薄膜を用いた場合についての
作成方法の一例を示す。素子構成は第３図のものである
。An example of a manufacturing method for a case where an a-8i thin film is used as a photoelectric conversion element will be shown. The element configuration is shown in FIG.
基板１としてはアルミナ基板を用いた。基板上に光照射
系のクラッド層４としてプラズマＣＶＤ法を用い、屈折
率１．４５のＳｉＯ２膜を作成した。膜厚は５μｍとし
た。次にコアＷＪ５としてプラズマＣＶＤ法を用い、屈
折率２．０のＳｉＮ膜を作成した。膜厚は１０μｍとし
た。次にＲＦスパッタリング法を用いて発光素子の下部
電極２１として、ＩＴＯ薄膜を形成した。膜厚は１００
０人とした。次にＥＬ素子の下部絶縁層２２としてＴａ
２Ｏ，膜を反応性ＲＦスパツタリング法を用いて形成し
た。膜厚は３０００人とした。次に発光／ｌＦ２３とし
て、Ｔｂ０ＦドープＺｎ５ｌ膜をＲＦスパッタリング法
で作成した。膜厚は７０００人とした。次にＥＬ素子の
上部絶縁層２４と上部電極２５を、下部絶縁層２２や下
部電極２１と同じ物質を同じ膜厚だけ順次作成した。次
に発光素子のクラッド層４として再度上記と同じＳｉｎ
、膜を５μｍ作成した。As the substrate 1, an alumina substrate was used. A SiO2 film having a refractive index of 1.45 was formed on the substrate as the cladding layer 4 of the light irradiation system using the plasma CVD method. The film thickness was 5 μm. Next, a SiN film having a refractive index of 2.0 was formed as the core WJ5 using a plasma CVD method. The film thickness was 10 μm. Next, an ITO thin film was formed as the lower electrode 21 of the light emitting device using an RF sputtering method. Film thickness is 100
The number was set to 0. Next, Ta is used as the lower insulating layer 22 of the EL element.
2O, the film was formed using a reactive RF sputtering method. The film thickness was set at 3,000 people. Next, as light emission/lF23, a Tb0F-doped Zn5l film was created by RF sputtering. The film thickness was set at 7,000 people. Next, the upper insulating layer 24 and the upper electrode 25 of the EL element were sequentially formed using the same material as the lower insulating layer 22 and the lower electrode 21 and having the same film thickness. Next, as the cladding layer 4 of the light emitting element, the same Sin as above was used again.
, a film with a thickness of 5 μm was prepared.
次に、遮光層６として、Ｃｒ薄膜を真空蒸着法で作成し
た。膜厚は２０００人とした。次に光受光系の導波路と
してクラッド層４及びコア層５を前記光照射系と同じも
のを作成した。膜厚もそれぞれ、５μｍ及び１０μｍと
した。次に光電変換素子の下部電極３１としてＩＴＯ膜
をＲＦスパッタリング法を用いて作成した。膜厚は１０
００人とした。次に光電変換素子３としてａ−Ｓｉ薄膜
をプラズマＣＶＤ法を用いて作成した。膜厚は１μｍと
した。次に光電変換素子３の上部電極２５として、Ｃｒ
薄膜を真空蒸着法で作成した。膜厚は２０００人とした
。次に光受光系のクラッド層４としてＳｉｎ、膜を前記
と同条件で作成した。膜厚は５μｍとした。最後に、発
光素子及び受光素子用の配線用電極として、Ａｆｌ薄膜
を真空蒸着法で作成した。膜厚は１μｍとした。Next, a Cr thin film was formed as the light-shielding layer 6 by vacuum evaporation. The film thickness was 2000 people. Next, a cladding layer 4 and a core layer 5 that were the same as those in the light irradiation system were created as a waveguide for a light reception system. The film thicknesses were also 5 μm and 10 μm, respectively. Next, an ITO film was formed as the lower electrode 31 of the photoelectric conversion element using an RF sputtering method. Film thickness is 10
00 people. Next, an a-Si thin film was formed as a photoelectric conversion element 3 using a plasma CVD method. The film thickness was 1 μm. Next, as the upper electrode 25 of the photoelectric conversion element 3, Cr
A thin film was created using a vacuum evaporation method. The film thickness was 2000 people. Next, a film of Sin was formed as the cladding layer 4 of the light receiving system under the same conditions as described above. The film thickness was 5 μm. Finally, an Afl thin film was formed by vacuum evaporation as wiring electrodes for the light-emitting element and the light-receiving element. The film thickness was 1 μm.
（１）画像読取り素子に必要な光源及び光検出素子が同
一平面上に、順次形成できるため。(1) The light source and photodetection element necessary for the image reading element can be formed sequentially on the same plane.
画像読み取り素子の小型化、低コスト化が実現した。Image reading elements have been made smaller and lower in cost.
（２）導波路光出射端、原稿面、導波路光入射端の位置
関係が、非常に近接させることができるため、発光素子
から出射される光の利用効率が高くなった。(2) Since the waveguide light output end, the document surface, and the waveguide light input end can be positioned very close to each other, the utilization efficiency of light emitted from the light emitting element is increased.
（３）光照射部Ｈ１光受光部Ｒ共に、光導波路を用いて
いるため、先に述べた迷光の影響が少なくなり、画像読
み取り素子の高分解能化が実現できた。(3) Since both the light irradiation section H and the light reception section R use optical waveguides, the influence of the stray light mentioned above is reduced, and high resolution of the image reading element can be realized.
第１図は、光センサの原理と迷光の発生を説明するため
のモデル図であり、第２図は１本発明の画像読み取り素
子の基本構成例を示す断面図であり、第３〜７図は、本
発明の変形例を示す断面図である。
■、１′・・・基板
３・・・光電変換素子
５・・・コア層
７・・・透明電極
ＩＯ・・・原稿
２２・・・下部絶縁層
２４・・・上部絶縁層
３１・・・下部電極
Ｈ・・・発光素子部
２・・・発光素子
４・・・クラッド層
６・・・遮光層
８・・・接着剤（接着層）
２１・・・下部電極
２３・・・発光層
２５・・・上部電極
３５・・・上池電極
Ｒ・・受光部FIG. 1 is a model diagram for explaining the principle of an optical sensor and the generation of stray light, FIG. 2 is a sectional view showing an example of the basic configuration of an image reading element of the present invention, and FIGS. FIG. 3 is a sectional view showing a modification of the present invention. ■, 1'...Substrate 3...Photoelectric conversion element 5...Core layer 7...Transparent electrode IO...Original 22...Lower insulating layer 24...Upper insulating layer 31... Lower electrode H...Light emitting element portion 2...Light emitting element 4...Clad layer 6...Light blocking layer 8...Adhesive (adhesive layer) 21...Lower electrode 23...Light emitting layer 25 ... Upper electrode 35 ... Upper electrode R ... Light receiving part
Claims (1)
層及び光導波路からなる光受光系を有する画像読み取り
素子において、光照射系及び光受光系のそれぞれの導波
路が導波路外方から断面中心に向い屈折率分布が増大す
るものであると共に、前記発光層が光導波路内部に位置
することを特徴とする画像読み取り素子。1. In an image reading element having a light irradiation system consisting of a light emitting layer and an optical waveguide, and a light reception system consisting of a photoelectric conversion layer and an optical waveguide, each of the waveguides of the light irradiation system and the light reception system is connected from the outside of the waveguide. An image reading element characterized in that the refractive index distribution increases toward the center of the cross section, and the light emitting layer is located inside an optical waveguide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1259532A JP2879744B2 (en) | 1989-10-04 | 1989-10-04 | Image reading element |
| US07/564,078 US5124543A (en) | 1989-08-09 | 1990-08-08 | Light emitting element, image sensor and light receiving element with linearly varying waveguide index |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1259532A JP2879744B2 (en) | 1989-10-04 | 1989-10-04 | Image reading element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03120869A true JPH03120869A (en) | 1991-05-23 |
| JP2879744B2 JP2879744B2 (en) | 1999-04-05 |
Family
ID=17335414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1259532A Expired - Fee Related JP2879744B2 (en) | 1989-08-09 | 1989-10-04 | Image reading element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2879744B2 (en) |
-
1989
- 1989-10-04 JP JP1259532A patent/JP2879744B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2879744B2 (en) | 1999-04-05 |
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