JPH03119641A - Electron beam diffraction device - Google Patents
Electron beam diffraction deviceInfo
- Publication number
- JPH03119641A JPH03119641A JP1255804A JP25580489A JPH03119641A JP H03119641 A JPH03119641 A JP H03119641A JP 1255804 A JP1255804 A JP 1255804A JP 25580489 A JP25580489 A JP 25580489A JP H03119641 A JPH03119641 A JP H03119641A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- sample
- incident angle
- incident
- adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 36
- 230000005855 radiation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 1
Abstract
Description
本発明は、電子線回折装置において電子線の試料に対す
る入射角及び入射方位を変化させる構造に関する。The present invention relates to a structure for changing the incident angle and direction of incidence of an electron beam on a sample in an electron beam diffraction apparatus.
電子線回折装置では、電子線の試料に対する入射角及び
入射方位を、目的とする測定に対して最適となるように
調整する必要がある。そのために従来切電子線回折装置
では、ある決まった方向から入射する電子線に対して、
第2図に示すように、試料を傾斜・回転させることによ
り電子線の試しかし、電子線回折装置では、試料は真空
中に保持されているので、試料を傾斜・回転させるには
、試料を保持している試料台を、真空外から操作しなけ
ればならず、真空外の駆動力を真空内部動機構に精度良
く伝達する機構、或は、真空中で使用できる特殊なモー
ター等が必要となり、非常に複雑でかつ高価なものとな
ると云う問題があった。また、機械的操作では、入射角
、入射方位を変える速度を上げることが難しいと云う問
題もあった。In an electron beam diffraction apparatus, it is necessary to adjust the incident angle and direction of incidence of the electron beam onto a sample so as to be optimal for the intended measurement. For this reason, conventional cutting electron beam diffraction equipment uses
As shown in Figure 2, the sample is tilted and rotated to test the electron beam. However, in an electron beam diffraction device, the sample is held in a vacuum, so tilting and rotating the sample requires rotating the sample. The sample stage that is being held must be operated from outside the vacuum, and a mechanism that accurately transmits the driving force from outside the vacuum to the movement mechanism inside the vacuum, or a special motor that can be used in a vacuum, is required. However, the problem is that it is extremely complicated and expensive. Another problem with mechanical operation is that it is difficult to increase the speed at which the incident angle and direction of incidence are changed.
本発明は、電子線回折装置における電子線の試料に対す
る入射角及び入射方位の調整を容易かつ高精度に行える
ようにすることを目的とする。An object of the present invention is to enable easy and highly accurate adjustment of the incident angle and direction of incidence of an electron beam on a sample in an electron beam diffraction apparatus.
電子線回折装置において、電子銃と試料との間に、電子
線の照射位置を固定にして電子線の入射方向だけを偏向
させる偏向コイルを設けた。
CtV−用】
電子線の試料に対する入射角及び入射方位の調整は、従
来試料を回転及び傾斜させることによって行っていたた
めに、構造が複雑でしかも低速度・低精度でしか制御で
きなかった。本発明は、試料の向きを機械的に制御する
のではなく、電子線の方向を電気的に制御することで、
電子線の試料に対する入射角及び入射方位の調整を高速
・高精度で行おうとするものであり、電子銃から試料に
照射される電子線を、試料に対して任意の入射角及び入
射方位で入射させることができる偏向コイルを、電子銃
と試料との中間に設けることで、電子線の偏向はコイル
の印加電圧を調整するだけで行うことができることから
、真空中における電子線の試料に対する入射角及び入射
方位の調整を容易に高精度、高速度で行うことができる
ようになった。In the electron beam diffraction apparatus, a deflection coil was provided between the electron gun and the sample to fix the irradiation position of the electron beam and deflect only the incident direction of the electron beam. For CtV] Adjustment of the incident angle and direction of the electron beam on the sample has conventionally been performed by rotating and tilting the sample, resulting in a complex structure and could only be controlled at low speed and with low accuracy. The present invention does not mechanically control the orientation of the sample, but electrically controls the direction of the electron beam.
The aim is to adjust the incident angle and direction of the electron beam onto the sample at high speed and with high precision. By installing a deflection coil between the electron gun and the sample, the electron beam can be deflected by simply adjusting the voltage applied to the coil. It is now possible to easily adjust the incident direction with high precision and high speed.
第1図に本発明の一実施例を示す、第1図において、S
は試料、Tは試料を設置する真空チャンバー、Pは真空
チャンバーT内を真空にする真空ポンプ、1は試料Sに
電子線を照射する電子銃、2は試料Sと電子銃1との中
間に配置した各組夫々にX、Y両方向に電子線を偏向さ
せる2組の偏向コイルで、試料Sに向けて照射する電子
線aの照射方向を電子線すのように常に試料面の一点0
を通るように“く”の字形に偏向させ、電子線の試料に
対する入射角及び入射方位の調整を行う。
3は簡単なマニピュレータで、試料Sを照射電子線に対
して任意な角度に設定できる機能を有しており、電子線
の試料に対する入射角及び入射方位の調整を行うことが
できる。電子線の試料に対する入射角及び入射方位の調
整は、マニピュレータ3と偏向コイル2の両方で行うこ
とができるが、大幅な粗調整はマニピュレータ3で行い
、高精度を要する微調整を偏向コイル2で行うと効果的
である。また、偏向コイル2を大型にすることによって
、偏向コイル2のみで上記調整を行うことも可能である
。4は試料面で回折された電子線を光に変換する蛍光板
である0図面には図示していないが、蛍光板4で発生し
た光を検出して、回折パターンを測定し、その回折パタ
ーンを分析することで、試料の構造解析を行う。FIG. 1 shows an embodiment of the present invention. In FIG.
is a sample, T is a vacuum chamber in which the sample is placed, P is a vacuum pump that evacuates the vacuum chamber T, 1 is an electron gun that irradiates the sample S with an electron beam, and 2 is located between the sample S and the electron gun 1. Two sets of deflection coils are arranged in each set to deflect the electron beam in both the X and Y directions, and the irradiation direction of the electron beam a to be irradiated toward the sample S is always set at one point 0 on the sample surface as shown in the figure.
The electron beam is deflected in a dogleg shape so that it passes through the sample, and the incident angle and direction of the electron beam on the sample are adjusted. 3 is a simple manipulator that has a function of setting the sample S at an arbitrary angle with respect to the irradiated electron beam, and can adjust the incident angle and direction of incidence of the electron beam on the sample. Adjustment of the incident angle and direction of incidence of the electron beam on the sample can be performed using both the manipulator 3 and the deflection coil 2. However, large rough adjustments are performed using the manipulator 3, and fine adjustments that require high precision are performed using the deflection coil 2. It is effective to do so. Further, by making the deflection coil 2 large-sized, it is also possible to perform the above adjustment using only the deflection coil 2. 4 is a fluorescent plate that converts the electron beam diffracted on the sample surface into light. 0Although not shown in the drawing, the light generated by the fluorescent plate 4 is detected, the diffraction pattern is measured, and the diffraction pattern is analyzed. By doing this, we can analyze the structure of the sample.
本発明によれば、電子線の試料に対する入射角及び入射
方位の調整を、試料の向きを機械的に制御する代わりに
、電子線の方向を電気的に制御することで、簡単な機構
により、電子線の試料に対する入射角及び入射方位の調
整を高速・高精度で行うことが可能になった。According to the present invention, the angle and direction of incidence of the electron beam on the sample can be adjusted by a simple mechanism by electrically controlling the direction of the electron beam instead of mechanically controlling the orientation of the sample. It has become possible to adjust the incident angle and direction of the electron beam onto the sample at high speed and with high precision.
第1図は本発明の一実施例の構成図、第2図は従来例の
試料駆動説明図である。
S・・・試料、T・・・真空チャンバー、P・・・真空
ボンブト・・電子銃、2・・・偏向コイル、3・・・マ
ニピュレータ、4・・・蛍光板。FIG. 1 is a configuration diagram of an embodiment of the present invention, and FIG. 2 is an explanatory diagram of sample drive in a conventional example. S...sample, T...vacuum chamber, P...vacuum bomb...electron gun, 2...deflection coil, 3...manipulator, 4...fluorescent plate.
Claims (1)
て電子線の入射方向だけを偏向させる偏向コイルを設け
たことを特徴とする電子線回折装置。An electron beam diffraction apparatus characterized in that a deflection coil is provided between an electron gun and a sample to fix the irradiation position of the electron beam and deflect only the incident direction of the electron beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1255804A JPH03119641A (en) | 1989-09-30 | 1989-09-30 | Electron beam diffraction device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1255804A JPH03119641A (en) | 1989-09-30 | 1989-09-30 | Electron beam diffraction device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03119641A true JPH03119641A (en) | 1991-05-22 |
Family
ID=17283866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1255804A Pending JPH03119641A (en) | 1989-09-30 | 1989-09-30 | Electron beam diffraction device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03119641A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011058833A1 (en) * | 2009-11-10 | 2011-05-19 | 三菱電機株式会社 | Particle beam radiation system and particle beam radiation method |
-
1989
- 1989-09-30 JP JP1255804A patent/JPH03119641A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011058833A1 (en) * | 2009-11-10 | 2011-05-19 | 三菱電機株式会社 | Particle beam radiation system and particle beam radiation method |
CN102612719A (en) * | 2009-11-10 | 2012-07-25 | 三菱电机株式会社 | Particle beam radiation system and particle beam radiation method |
US8525133B2 (en) | 2009-11-10 | 2013-09-03 | Mitsubishi Electric Corporation | Particle beam irradiation system and particle beam irradiation method |
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