JPH0311728A - Solid-phase epitaxy - Google Patents
Solid-phase epitaxyInfo
- Publication number
- JPH0311728A JPH0311728A JP14770989A JP14770989A JPH0311728A JP H0311728 A JPH0311728 A JP H0311728A JP 14770989 A JP14770989 A JP 14770989A JP 14770989 A JP14770989 A JP 14770989A JP H0311728 A JPH0311728 A JP H0311728A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- substrate
- insulating film
- semiconductor film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000348 solid-phase epitaxy Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000007790 solid phase Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 12
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101150114751 SEM1 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は化合物半導体膜の固相エピタキシャルに関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to solid phase epitaxial formation of compound semiconductor films.
［従来の技術］
従来、８１半導体基板平表面に図形状に絶Ｂ膜を形成し
、前記８１基板上の絶縁膜に学結晶Ｓ１膜を延在させて
成る固相エピタキシャルはあった。[Prior Art] Conventionally, there has been a solid-phase epitaxial method in which an 81 semiconductor substrate has a flat surface formed with an isolated B film in a graphic shape, and a scientific crystal S1 film is extended over an insulating film on the 81 substrate.
しかし、８１基板等の半導体基板表面に図形状に絶縁膜
を形成し、前記８１基板等の半導体基板表面に図形状に
絶縁膜を形成し、前記８１基板等の半導体基板上の絶縁
膜にＧａＡ６等の単結晶化合物半導体膜を延在させて成
る固相エピタキシャルは無かった。However, an insulating film is formed in a graphic shape on the surface of a semiconductor substrate such as the 81 substrate, an insulating film is formed in a graphic shape on the surface of a semiconductor substrate such as the 81 substrate, and an insulating film is formed on the insulating film on the semiconductor substrate such as the 81 substrate. There was no solid-phase epitaxial structure consisting of an extended single-crystal compound semiconductor film.
［発明が解決しようとする課題］
上記従来波ＩＫよると、半導体基板表面に形成された図
形状絶縁膜上に単結晶化合物半導体膜が形成された事は
な（、その為１ｃｓＯ工（Ｓｅｍ１Ｃｏｎｄｕｃｔｏｒ
Ｏｎ工ｎ５ｕｌａｔｏｒ ）構造による高速の化合物
半導体素子が製作できず、高速の半導体装置が提供でき
ないとい、５課題があった。[Problems to be Solved by the Invention] According to the conventional wave IK, a single crystal compound semiconductor film has never been formed on a graphical insulating film formed on the surface of a semiconductor substrate.
There were five issues: it was not possible to manufacture high-speed compound semiconductor devices using the on-engine, five-layer structure, and it was not possible to provide high-speed semiconductor devices.
本発明は、かかる従来技術の課題を解決し、半導体基板
表面に形成された図形状絶縁膜状にも延在した単結晶化
合物半導体膜を形成した化合物半導体素子製作用の基板
を提供する事を目的とする［課題を解決するための手段
］
上記課題を解決する為に本発明は、図形状に絶縁膜が形
成された半導体基板表面に、固相エピタキシャルにより
単結晶化合物半導体膜を形成する手段をとる事を基本的
手段とする。The present invention solves the problems of the prior art and provides a substrate for manufacturing a compound semiconductor device in which a single crystal compound semiconductor film is formed on the surface of the semiconductor substrate and extends to the shape of a graphical insulating film. Objective [Means for Solving the Problems] In order to solve the above problems, the present invention provides means for forming a single crystal compound semiconductor film by solid phase epitaxial method on the surface of a semiconductor substrate on which an insulating film is formed in a figure shape. The basic method is to take
［実施例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、単結晶８１基板表面Ｋｓｉｏ、等から成る絶ａ膜
を図形状く形成した基板を作成し、該基板上にＧａＡａ
やＩｎＰあるいはＳｉＯ等の化合物半導体膜を化学蒸着
法や物理蒸着法等で形成する。該化合物半導体膜を前記
図形状絶縁膜上まで固相エピタキシャルにより単結晶化
して延在させるにはいくつかの方法がある。すなわち、
化合物半導体膜の蒸着時に加熱する方法、化合物半導体
膜を蒸着後加熱する方法、化合物半導体膜を蒸着後にレ
ーザー・ビーム アニール等の量子ビームアニール処理
を施す方法等であり、絶縁膜に形成された窓部から少（
とも２ミクロンは単結晶化合物半導体膜が絶縁膜上に延
在して育成されることとなる。Now, a substrate is prepared on which an amorphous film consisting of Ksio, etc. is formed on the surface of a single crystal 81 substrate, and GaAa is deposited on the substrate.
A compound semiconductor film such as InP or SiO is formed by a chemical vapor deposition method, a physical vapor deposition method, or the like. There are several methods for single-crystalizing and extending the compound semiconductor film onto the patterned insulating film by solid-phase epitaxial method. That is,
These methods include heating during vapor deposition of a compound semiconductor film, heating after vapor deposition, and quantum beam annealing treatment such as laser beam annealing after vapor deposition of a compound semiconductor film. From part to small (
In both cases, the single-crystal compound semiconductor film is grown to extend 2 microns on the insulating film.
なお、上記実施例の場合単結晶８１基板は単結晶ＧａＡ
ｓ基板等の単結晶化合物半導体基板であっても良い。In the above embodiment, the single crystal 81 substrate is made of single crystal GaA.
A single crystal compound semiconductor substrate such as an s-substrate may also be used.
本発明の応用例としては、前記絶縁膜上に延在して形成
された単結晶化合物半導体膜上にＭＫＳ（Ｍｅｔａｌ
Ｅｌｅｃｔｒｏｄｅ Ｓｅｍ１ｃｏｎｄｕｃｔｏｒ ）
ＩＦ Ｋ ’Ｉ’ （Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｔ
ａｎｓｉｓｔｏｒ ）やＭ工Ｓ （Ｍｅｔａｌ 工ｎ５
ｕｌａｔｏｒ Ｓｅｍ１ｃｏｎｄｕｃｔ。As an application example of the present invention, MKS (Metal
Electrode Sem1 conductor)
IF K 'I' (Field Effect Tt
Ansistor ) and M Engineering S (Metal Engineering n5
ulator Sem1conduct.
ｒ ）］ＦｇＴや、これ等ＦＥＴの少（ともドレイン接
合部を形成して他の部分を絶縁膜の窓部の単結晶化合物
半導体膜上に形成したり、あるいはトランジスターを形
成して接合容量の低減を計り、化合物半導体素子の高速
化を計ることができる。r)] FgT and other small FETs (with the drain junction formed and the other parts formed on the single crystal compound semiconductor film in the window of the insulating film, or by forming a transistor and increasing the junction capacitance). By reducing this, it is possible to increase the speed of compound semiconductor devices.
［発明の効果］
本発明によりＳＯ工溝構造よる高速の化合物半導体素子
を製作する事ができる事となり、高速の半導体装置を提
供する事ができる効果がある。[Effects of the Invention] According to the present invention, it is possible to manufacture a high-speed compound semiconductor element using an SO groove structure, and there is an effect that a high-speed semiconductor device can be provided.
Claims (1)
導体基板上の絶縁膜に単結晶化合物半導体膜を延在させ
て成る事を特徴とする固相エピタキシャル。1. A solid-phase epitaxial device, characterized in that an insulating film is formed in a figure shape on the surface of a semiconductor substrate, and a single crystal compound semiconductor film is extended over the insulating film on the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14770989A JPH0311728A (en) | 1989-06-09 | 1989-06-09 | Solid-phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14770989A JPH0311728A (en) | 1989-06-09 | 1989-06-09 | Solid-phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0311728A true JPH0311728A (en) | 1991-01-21 |
Family
ID=15436446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14770989A Pending JPH0311728A (en) | 1989-06-09 | 1989-06-09 | Solid-phase epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0311728A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5735949A (en) * | 1990-09-13 | 1998-04-07 | Forschungszentrum Julich Gmbh | Method of producing electronic, electrooptical and optical components |
-
1989
- 1989-06-09 JP JP14770989A patent/JPH0311728A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5735949A (en) * | 1990-09-13 | 1998-04-07 | Forschungszentrum Julich Gmbh | Method of producing electronic, electrooptical and optical components |
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